| Entries |
| Document | Title | Date |
|---|
| 20080213476 | REAGENT DISPENSING APPARATUS AND DELIVERY METHOD - This invention relates to a vapor or liquid phase reagent dispensing apparatus comprising:
| 09-04-2008 |
| 20090136667 | NOVEL PORE-FORMING PRECURSORS COMPOSITION AND POROUS DIELECTRIC LAYERS OBTAINED THEREFROM - Method of forming a low dielectric k porous film on a substrate, comprising reacting at least a film matrix precursor compound having silicon, carbon, oxygen and hydrogen atoms, and either at least a pore-forming compound, of the formula (I) wherein R represents: either a linear or branched, saturated or non saturated hydrocarbon radical, or a cyclic saturated or unsaturated hydrocarbon radical, or at least one of the following pore-forming compounds: 1-methyl-4-(1-methyl ethyl)-7-oxabicyclo[2.2.1.]heptane, 1,3,3-trimethyl-2-oxabicyclo[2.2.1.]octane or 1,8-cineole, or 1-methyl-4-(1-methyl ethenyl)-7-oxabicyclo[4.1.0.]heptane; New precursor precursor mixture, and the use of a compound of formula (I), as a pore-forming compound in a chemical vapor deposition of a low dielectric k film on a substrate. | 05-28-2009 |
| 20090202721 | Method for Thin Film Formation - A method for thin film formation that can form, at a low temperature, a good thin film having a good interfacial property between a silicon substrate and a silicon oxide film and having a low interfacial trap density is provided. | 08-13-2009 |
| 20090214784 | Transport Device, In Particular for Transporting Sheet-Like Substrates Through a Coating Installation - The transporting device according to the invention, in particular for transporting sheet-like substrates through a coating installation, comprises transporting rollers which are rotatably mounted on both sides and horizontally arranged transversely in relation to the transporting direction, the uppermost surface lines of the transporting rollers defining the transporting plane, and is characterized in that the end parts of the transporting rollers have a smaller diameter than the middle part of the transporting rollers and in that baffles which are mounted displaceably in the axial direction of the transporting rollers between a first position and a second position are arranged between the end parts of the transporting rollers and the transporting plane. The fact that the baffles are mounted in an axially displaceable manner has the effect of considerably extending the cleaning intervals of the transporting device. At first the baffles are arranged in a first position, in which the end of the baffle lies underneath the substrate and, in the horizontal direction, as close as possible to the middle of the transporting roller Vapour-depositing material that gets beyond the edge of the substrate hits the baffle. During operation of the transporting device, the baffles are continuously displaced from the middle part to the ends of the transporting rollers. As a result, the increase in thickness of the layer produced on the baffles is limited, since the vapour keeps hitting new portions of the baffle. | 08-27-2009 |
| 20090246373 | METHOD OF FORMING METALLIC FILM AND PROGRAM-STORING RECORDING MEDIUM - A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base material gas such as WF | 10-01-2009 |
| 20090263580 | APPARATUS FOR MANUFACTURING A QUANTUM-DOT ELEMENT - An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved. | 10-22-2009 |
| 20090291211 | Apparatus for atomic layer deposition and method of atomic layer deposition using the same - Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed. | 11-26-2009 |
| 20100021631 | COATING APPARATUS AND COATING METHOD - In a coating apparatus, a distributor plate | 01-28-2010 |
| 20100104754 | MULTIPLE GAS FEED APPARATUS AND METHOD - Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source. By separately feeding process gases to different regions of the showerhead, the ratio and flow of process gases through the showerhead may be controlled to provide improved uniformity across the surface of a substrate. | 04-29-2010 |
| 20100151129 | METHOD AND ARRANGEMENT FOR PROVIDING CHALCOGENS - A method and an arrangement for providing chalcogens as thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass is achieved by forming an inlet- and outlet-side gas curtain for an oxygen-tight closure of a transport channel in a vapour deposition head, introducing an inert gas into the transport channel for displacing atmospheric oxygen, introducing one or more substrates to be coated, the substrates being temperature-regulated to a predetermined temperature, into the transport channel, introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel at the vapour deposition head above the substrates and forming a selenium layer on the substrates by PVD at a predetermined pressure, and removing the substrates after a predetermined process time has elapsed. | 06-17-2010 |
| 20100173073 | VAPORIZING APPARATUS AND FILM FORMING APPARATUS PROVIDED WITH VAPORIZING APPARATUS - Because an evaporating apparatus for use in an MOCVD film deposition system has a structure in which a plurality of gas passages brings in a gas from the upper direction, the apparatus has a difficulty to position a jet nozzle, and the apparatus is incapable of accurately controlling the pressure and flow rate of a carrier gas mixed with a raw material solution to be issued into an evaporating unit, and it is thus difficult to highly accurately control the composition of MOCVD films. A plurality of gas passages is arranged on a flat, disk-shaped plate. With this configuration, the accurate positioning of the jet nozzle can be made easier, and the composition of MOCVD films can be controlled highly accurately. | 07-08-2010 |
| 20100178424 | METHOD OF MANUFACTURING ORGANIC THIN FILM - A thin film of a uniform film thickness is formed even without increasing the film deposition rate. The temperature of an evaporation device disposed in an evaporation chamber is raised in advance, and an organic material is dropped from a supply unit onto an evaporation surface of the evaporation device; and when the organic material is evaporated, a heated carrier gas is introduced into the evaporation chamber, and is mixed in the evaporation chamber and is introduced into a discharger. While a molecular flow is formed in the discharger in a case that only the organic material vapor is introduced into the discharger, the pressure within the discharger is raised due to the carrier gas, so that a viscous flow is formed and the mixed gas is filled in the discharger and is uniformly discharged. The organic material may be supplied by a small amount and the film deposition rate may not become too high. | 07-15-2010 |
| 20100247766 | NOZZLE GEOMETRY FOR ORGANIC VAPOR JET PRINTING - A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle. | 09-30-2010 |
| 20100247767 | GAS DELIVERY APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION - Apparatus and method for forming thin layers on a substrate are provided. A processing chamber has a gas delivery assembly that comprises a lid with a cap portion and a covering member that together define an expanding channel at a central portion of the lid, the covering member having a tapered bottom surface extending from the expanding channel to a peripheral portion of the covering member. Gas conduits are coupled to the expanding channel and positioned at an angle from a center of the expanding channel to form a circular gas flow through the expanding channel. The bottom surface of the chamber lid is shaped and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passageway, and one or more gas sources are coupled to each valve. A choke is disposed on the chamber lid adjacent a perimeter of the tapered bottom surface. | 09-30-2010 |
| 20100310770 | Process for synthesizing a thin film or composition layer via non-contact pressure containment - A process for synthesizing a thin film or composition layer from a plurality of precursor layers supported on a substrate, includes exposing the plurality of precursor layers to non-contact pressure, and heating the plurality of precursor layers under the non-contact pressure to a reaction temperature sufficient to promote the formation of the film or composition layer. | 12-09-2010 |
| 20110008540 | CANISTER FOR DEPOSITION APPARATUS, AND DEPOSITION APPARATUS AND METHOD USING THE SAME - A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage. | 01-13-2011 |
| 20110091648 | GAS TREATMENT SYSTEMS - An MOCVD reactor such as a rotating disc reactor ( | 04-21-2011 |
| 20110151122 | FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber. | 06-23-2011 |
| 20110171383 | METHOD FOR CONSTANT CONCENTRATION EVAPORATION AND A DEVICE USING THE SAME - Disclosed herein is a device comprising an evaporator; and a heat exchanger; the heat exchanger being in fluid communication with evaporator; evaporator comprising an outer casing; and an inner casing that is disposed within the outer casing; the inner casing contacting a plate; wherein the inner casing encloses a first conduit that is operative to introduce a carrier fluid into evaporator; and a second conduit that is operative to remove carrier fluid entrained with a precursor; wherein the outer casing is detachably attached to the plate; the plate contacting a first precursor conduit that is operative to introduce the precursor into evaporator from the heat exchanger; where the heat exchanger is disposed proximate to evaporator at a distance effective to maintain the precursor in evaporator at a substantially constant temperature when the ambient temperature around the heat exchanger and evaporator fluctuates by an amount of up to about ±35° C. | 07-14-2011 |
| 20110183069 | DEPOSITION APPARATUS, DEPOSITION METHOD, AND STORAGE MEDIUM HAVING PROGRAM STORED THEREIN - A deposition apparatus includes: a plurality of deposition sources, each of which includes a material container and a carrier gas introducing pipe, vaporizes a film-forming material stored in the material container, and transfers vaporized molecules of the film-forming material by using a first carrier gas introduced from the carrier gas introducing pipe; a connecting pipe, which is connected to the plurality of deposition sources and transfers the vaporized molecules of the film-forming material transferred from each deposition source; a bypass pipe, which is connected to the connecting pipe and directly introduces a second carrier gas to the connecting pipe; and a processing container, which includes a built-in discharge mechanism connected to the connecting pipe and forms a film on a target object therein by discharging, from the discharge mechanism, the vaporized molecules of the film-forming material transferred by using the first and second carrier gases. | 07-28-2011 |
| 20110223334 | ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT - Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly. | 09-15-2011 |
| 20110250354 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 10-13-2011 |
| 20110305835 | SYSTEMS AND METHODS FOR A GAS TREATMENT OF A NUMBER OF SUBSTRATES - Systems and methods for the gas treatment of one or more substrates include at least two gas injectors in a reaction chamber, one of which may be movable. The systems may also include a substrate support structure for holding one or more substrates disposed within the reaction chamber. The movable gas injector may be disposed between the substrate support structure and another gas injector. The gas injectors may be configured to discharge different process gasses therefrom. The substrate support structure may be rotatable around an axis of rotation. | 12-15-2011 |
| 20120003389 | MOCVD REACTOR HAVING A CEILING PANEL COUPLED LOCALLY DIFFERENTLY TO A HEAT DISSIPATION MEMBER - The invention relates to a device for depositing at least one, in particular crystalline, layer on at least one substrate ( | 01-05-2012 |
| 20120040098 | CARBURETOR, CARBURETOR FOR MOCVD USING SAME, CENTER ROD FOR USE IN THE CARBURETOR OR CARBURETOR FOR MOCVD, METHOD FOR DISPERSING CARRIER GAS, AND METHOD FOR VAPORIZING CARRIER GAS - Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod. | 02-16-2012 |
| 20120107504 | EVAPORATION SYSTEM AND METHOD - A deposition system is provided which is adapted for depositing a thin film onto a substrate. The deposition system includes a substrate carrier adapted for carrying the substrate and at least one tilted evaporator crucible. The at least one tilted evaporator crucible is adapted for directing evaporated deposition material towards the substrate in a main emission direction. The main direction emission of the tilted evaporator crucible is different from a direction normal to the substrate. | 05-03-2012 |
| 20120121807 | FILM DEPOSITION SYSTEM AND METHOD AND GAS SUPPLYING APPARATUS BEING USED THEREIN - The present invention provides a film deposition system and method by combining a plurality of gas supplying apparatuses and a deposition apparatus being in communication with the plurality of gas supplying apparatuses. By means of respectively providing different types of vapor precursors with high concentration and high capacity into a process chamber of the deposition apparatus through the plurality of gas supplying apparatus, the deposition reaction is accelerated so as to improve the efficiency of film deposition. In an embodiment of the gas supplying apparatus, it utilizes a first gas for providing high pressure toward on a liquid surface of the precursor, thereby transporting the precursor into an atomizing and heating unit whereby the precursor is atomized and then is heated so as to form a high-concentration and high capacity vapor precursor transported by another carrier gas. | 05-17-2012 |
| 20120141676 | ALD COATING SYSTEM - An ALD coating system ( | 06-07-2012 |
| 20120148745 | Aminovinylsilane for CVD and ALD SiO2 Films - This invention related to method to form silicon dioxide films that have extremely low wet etch rate in HF solution using a thermal CVD process, ALD process or cyclic CVD process in which the silicon precursor is selected from one of:
| 06-14-2012 |
| 20120231166 | ORGANIC THIN FILM DEPOSITION DEVICE, ORGANIC EL ELEMENT MANUFACTURING DEVICE, AND ORGANIC THIN FILM DEPOSITION METHOD - An organic thin film deposition device that is compact and high in processing capability is provided. Inside a vacuum chamber, first and second substrate arrangement devices that can be in a horizontal posture and a standing posture are provided; and when in the standing posture, substrates held by the respective substrate arrangement devices and first and second organic vapor discharging devices face each other. When one of the substrate arrangement devices is in the horizontal posture, masks and the substrates are lifted up by alignment pins and transfer pins and are replaced with a substrate not yet film formed, for position adjustment. With one organic thin film deposition device, two substrates can be processed at the same time. | 09-13-2012 |
| 20120288625 | GAS SUPPLY APPARATUS, THERMAL TREATMENT APPARATUS, GAS SUPPLY METHOD, AND THERMAL TREATMENT METHOD - A gas supply apparatus including a raw material gas supply system supplying a raw material gas inside a raw material storage tank into the processing container by the carrier gas, the gas supply apparatus includes: a carrier gas passage introducing the carrier gas into the raw material storage tank, a raw material gas passage connecting the raw material storage tank and the processing container to supply the carrier gas and the raw material gas; a pressure control gas passage being connected to the raw material gas passage to supply the pressure control gas; and a valve control unit controlling an opening/closing valve to perform for starting a supply of the pressure control gas into the processing container and simultaneously starting supply of the raw material gas into the processing container from the raw material storage tank, and stopping the supply of the pressure control gas. | 11-15-2012 |
| 20130171349 | SAMPLE PREPARATION DEVICE FOR MALDI AND SAMPLE PREPARATION METHOD - To provide a sample preparation device that is appropriate for the formation of a matrix film for MALDI through vacuum vapor deposition. A sample preparation device is provided with: a sample substrate support unit | 07-04-2013 |
| 20130302520 | CO-EVAPORATION SYSTEM COMPRISING VAPOR PRE-MIXER - A processing system for depositing a plurality of source materials on a substrate, includes a first thermal evaporation source that can evaporate a first source material to produce a first vapor, a second thermal evaporation source that can evaporate a second source material to produce a second vapor, a vapor mixing chamber that allows the first vapor and the second vapor to be mixed to produce a mixed vapor, and conduits that can separately transport the first vapor and the second vapor to the vapor mixing chamber. The mixed vapor can be directed toward a substrate to deposit a mixture of the first source material and the second source material on the substrate. The processing system can also include vapor filters configured to regulate flows of the first vapor and the second vapor, and a mixed vapor filter to regulate flow of the mixed vapor. | 11-14-2013 |
| 20140272138 | Method To Control Corrosion Of A Metal Surface Using Alkyl Sulfamic Acids Or Salts Thereof - The present invention provides a method of inhibiting corrosion of a metal surface with at least one alkyl sulfamic acid or salt thereof to the metal surface in an amount effective to inhibit corrosion of the metal surface. The alkyl sulfamic acid or salt thereof can be applied in any suitable manner to the metal surface, for example, flowing, coating, sponging, wiping, spraying, painting, showering, and/or misting. | 09-18-2014 |
| 20140322445 | DEFINED DOSING ATMOSPHERIC TEMPERATURE AND PRESSURE VAPOR DEPOSITION SYSTEM - A closed chemical introduction system used to deliver active ingredients in liquid chemical to a chemical vapor deposition system includes a robust, moisture-free cartridge containing a defined dose of liquid chemical. The cartridge is placed on a mounting slot specially configured to receive the cartridge. Upon initiating the system, a first linear mechanical actuator securely holds the cartridge in the slot, while an extraction lance attached to a second linear mechanical actuator punctures the cartridge from the bottom, extracts the liquid chemical and delivers it to a vaporization chamber. The vaporization chamber evaporates the liquid chemical and delivers the vapors containing the active ingredients to the chemical vapor deposition system. The chemical vapor deposition system may include a treatment chamber, a conveyor, a compressed clean air system to provide separate treatment compartments within the chamber, a moisture system, a chemical vapor system, and a neutralization system to neutralize harmful byproducts. | 10-30-2014 |
| 20150072075 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus includes an aerosol generation device which generates an aerosol including a solution of a film-forming material dispersed in a carrier gas, a chamber which vaporizes the aerosol such that fine particles of the film-forming material are generated from the aerosol that is generated by the aerosol generation device, a nozzle which discharges the fine particles generated by the chamber toward a substrate, and a moving mechanism which executes relative movement of the nozzle and the substrate along a surface of the substrate. The nozzle has a discharge port which discharges the fine particles to a slit-shaped region extending in a direction orthogonal to a moving direction of the relative movement between the nozzle and the substrate executed by the moving mechanism. | 03-12-2015 |
| 20150307989 | ATOMIC LAYER DEPOSITION METHOD AND APPARATUSES - A method includes operating an atomic layer deposition reactor configured to deposit material on at least one substrate by sequential self-saturating surface reactions, and using dry air in the reactor as purge gas. | 10-29-2015 |
| 20150368789 | METHOD AND ARRANGEMENT FOR PROVIDING CHALCOGENS - A method and an arrangement for providing chalcogens as thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass, is achieved by forming an inlet- and outlet-side gas curtain for an oxygen-tight closure of a transport channel in a vapour deposition head, introducing an inert gas into the transport channel for displacing atmospheric oxygen, introducing one or more substrates to be coated, the substrates being temperature-regulated to a predetermined temperature, into the transport channel, introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel at the vapour deposition head above the substrates and forming a selenium layer on the substrates by PVD at a predetermined pressure, and removing the substrates after a predetermined process time has elapsed. | 12-24-2015 |
| 20160001320 | APPARATUS AND METHOD FOR DEPOSITION FOR ORGANIC THIN FILMS - The invention provides apparatus and methods for organic continuum vapor deposition of organic materials on large area substrates. | 01-07-2016 |
