| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427255110 | Base includes an inorganic compound containing silicon or metal (e.g., glass, ceramic, brick, etc.) | 31 |
| 20080199612 | Method and Apparatus For Hydrogenation of Thin Film Silicon on Glass - A method and apparatus is provided for hydrogenation of a target, such as a polycrystalline silicon film on a glass substrate, by using an atomic hydrogen source. The target is subjected to intermittent exposure of the atomic hydrogen field of the source until at least one area of the target has been subjected to the hydrogen field for a predetermined minimum period of time. The processing area of the source established by its atomic hydrogen field is smaller than the target, and after the target is moved into the high temperature processing zone it is translated within the high temperature processing zone to intermittently process successive areas of the target until the entire target has been processed for a predetermined minimum period of time. After the entire target has been processed, the target is cooled to a predetermined lower temperature while still intermittently subjecting the target to atomic hydrogen. | 08-21-2008 |
| 20100080902 | METHOD AND APPARATUS FOR LOW COST PRODUCTION OF POLYSILICON USING SIEMEN'S REACTORS - A novel low cost polysilicon production technique for Siemens type reactors is disclosed. In one embodiment, a CVD reactor assembly includes a reactor forming a stainless steel envelope attached to a base plate. The stainless steel envelope is designed to receive a thermal fluid at room temperature and maintain a reactor wall temperature up to 450° C. A steam generator is configured to receive the thermal fluid having a temperature up to 450° C. from the reactor and generate a low pressure steam around 350° C. to 450° C. A low pressure steam turbine/generator is configured to receive the low pressure steam and generate electricity. In another embodiment, the steam generator is configured to receive heat from an external source in addition to the thermal fluid to generate super heated steam. A conventional steam turbine/generator receives the super heated steam and generates electricity. | 04-01-2010 |
| 20100080903 | FLUOROPOLYMER THIN FILM AND METHOD FOR ITS PRODUCTION - To provide a method for producing a fluoropolymer excellent in adhesion to a substrate and film strength. | 04-01-2010 |
| 20110076402 | SYSTEM FOR CONTROLLING THE SUBLIMATION OF REACTANTS - An apparatus and method improves heating of a solid precursor inside a sublimation vessel. In one embodiment, inert, thermally conductive elements are interspersed among units of solid precursor. For example the thermally conductive elements can comprise a powder, beads, rods, fibers, etc. In one arrangement, microwave energy can directly heat the thermally conductive elements. | 03-31-2011 |
| 20120148744 | SUBSTRATE PROCESSING APPARATUSES AND SYSTEMS - A system for processing substrates is described. In one embodiment, the system comprises a process chamber, at least one electrical resistance heater, and at least one Coanda effect gas injector. | 06-14-2012 |
| 20160115586 | GROUP 8-CONTAINING FILM FORMING COMPOSITIONS, THEIR SYNTHESIS, AND USE IN FILM DEPOSITION - Group 8-containing film forming compositions, their preparation, and their use for the vapor deposition of films are disclosed. The Group 8-containing film forming compositions comprise silylamide-containing precursors, particularly {Fe[N(SiMe | 04-28-2016 |
| 20160122868 | METHOD FOR SYNTHESIS OF TRANSITION METAL CHALCOGENIDE - Disclosed is a method for synthesizing a transition metal chalcogenide, in which a transition metal chalcogenide is synthesized on a substrate by atomic layer deposition to sequentially supply a precursor of the transition metal chalcogenide and a reactant so as to have a predetermined synthesis thickness, the transition metal chalcogenide is synthesized at a process temperature of 450° C. or higher and 1000° C. or lower, and the transition metal chalcogenide is synthesized at a process temperature corresponding to the predetermined synthesis thickness. | 05-05-2016 |
| 427255120 | Chemical vapor infiltration (i.e., CVI) of porous base (e.g., fiber, fibrous web etc.) | 1 |
| 20160003106 | METHOD FOR THE PRODUCTION OF A CURVED CERAMIC SOUND ATTENUATION PANEL - A method of fabricating a sound attenuation panel of curved shape, the method including impregnating a fiber structure defining a cellular structure with a ceramic precursor resin; polymerizing the ceramic precursor resin while holding the fiber structure on tooling presenting a curved shape corresponding to the final shape of the cellular structure; docking the cellular structure with first and second skins, each formed by a fiber structure impregnated with a ceramic precursor resin, each skin being docked to the cellular structure before or after polymerizing the resin of the skins; pyrolyzing the assembly constituted by the cellular structure and the first and second skins; and densifying the assembly by chemical vapor infiltration. | 01-07-2016 |
| 427255140 | Organic compound containing coating | 2 |
| 20130129923 | ZINC OXIDE PRECURSOR CONTAINING ALKYL ZINC HALIDE AND METHOD OF DEPOSITING ZINC OXIDE-BASED THIN FILM USING THE SAME - A zinc oxide precursor for use in deposition of a zinc oxide-based thin film contains an alkyl zinc halide having the following formula: R—Zn—X, where R is an alkyl group C | 05-23-2013 |
| 20140295081 | TREATMENT OF STEEL SURFACES - The content of phosphorus in polycrystalline silicon prepared by the Siemens process is reduced by treating phosphorus-containing steel surfaces with an α-amino-functional alkoxysilane. The treated surface exhibits less corrosion in an atmosphere of moist hydrogen chloride, and less loss of phosphorus as a result. | 10-02-2014 |
| 427255150 | Plural coatings applied utilizing vapor, gas, or smoke | 3 |
| 20080241379 | Method and apparatus for reducing substrate temperature variability - A method and apparatus for treating a substrate in a processing system. The processing system includes a process chamber having a pumping system configured to evacuate the process chamber, a substrate holder coupled to the process chamber and configured to support the substrate and heat the substrate, and a process gas delivery system coupled to the process chamber and configured to introduce a process gas to a process space above an upper surface of the substrate. Furthermore, the process chamber includes one or more apparatus surfaces in radiative communication with the upper surface of the substrate and having a low emissivity and/or high reflectivity. | 10-02-2008 |
| 20100080904 | SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL - Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure. | 04-01-2010 |
| 20130071566 | PROCESS FOR FORMING A SILICA COATING ON A GLASS SUBSTRATE - A chemical vapor deposition process for the deposition of a silica layer on a glass substrate is provided. The process includes providing a glass substrate. The process also includes forming a gaseous precursor mixture comprising a silane compound, oxygen, water vapor, and a radical scavenger and directing the precursor mixture toward and along the glass substrate. The mixture reacts over the glass substrate to form a silica coating thereon. | 03-21-2013 |
| 427255180 | Silicon containing coating | 10 |
| 20090123649 | METHOD OF MANUFACTURING SILICON NANOTUBES USING DOUGHNUT-SHAPED CATALYTIC METAL LAYER - Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts. | 05-14-2009 |
| 20090136666 | Method for manufacturing polycrystalline silicon - A method for manufacturing polycrystalline silicon with high quality by effectively preventing undesired shape such as giving an rough surface to silicon rods or an irregularity in diameter of the silicon rods. The method for manufacturing polycrystalline silicon includes: an initial stabilizing step of deposition wherein a velocity of ejecting the raw material gas from the gas ejection ports is gradually increased; the shaping step wherein first the ejection velocity is increased at a rate higher than that in the stabilizing step and then the ejection velocity is gradually increased at a rate lower than the previous increasing rate; and a growing step wherein, after the shaping step, the ejection velocity is made slower than that at the end of the shaping step until the end of the deposition. | 05-28-2009 |
| 20090269493 | METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON ROD - The present invention utilizes a silicon member (single-crystalline silicon rod), which is cut out from a single-crystalline silicon ingot which is grown by a CZ method or FZ method, as the core wire when manufacturing a silicon rod. Specifically, a planar silicon is cut out from a body portion which is obtained by cutting off a shoulder portion and a tail portion from a single-crystalline silicon ingot and is further cut into thin rectangles to obtain a silicon bar. In the case that the crystal growth axis orientation is <100>, there are four crystal habit lines, and the silicon bar is cut out such that the surface forms an off-angle θ in a predetermined range with the crystal habit line. The provided polycrystalline silicon rod has a low impurity contamination and high single-crystallization efficiency. | 10-29-2009 |
| 20110206845 | ORGANOMETALLIC COMPOUNDS AND PROCESSES FOR PREPARATION THEREOF - This invention relates to organometallic compounds represented by the formula LML′ wherein M is a metal or metalloid, L is a substituted or unsubstituted cyclopentadienyl group or cyclopentadienyl-like group, a substituted or unsubstituted pentadienyl group or pentadienyl-like group, or a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, and L′ is a substituted or unsubstituted pyrrolyl group or pyrrolyl-like group, a process for producing the organometallic compounds, and a method for producing a film or coating from the organometallic compounds. The organometallic compounds are useful in semiconductor applications as chemical vapor or atomic layer deposition precursors for film depositions. | 08-25-2011 |
| 20120263876 | DEPOSITION OF SILICON DIOXIDE ON HYDROPHOBIC SURFACES - Methods for forming silicon dioxide thin films on hydrophobic surfaces are provided. For example, in some embodiments, silicon dioxide films are deposited on porous, low-k materials. The silicon dioxide films can be deposited using a catalyst and a silanol. In some embodiments, an undersaturated dose of one or more of the reactants can be used in forming a pore-sealing layer over a porous material. | 10-18-2012 |
| 20130115374 | POLYCRYSTALLINE SILICON PRODUCTION - A chemical vapor deposition (CVD) reactor system has a reaction chamber enclosed by a reaction chamber wall with an inner surface disposed towards the interior of the chamber. At least a portion of the wall is a heat control layer that faces the chamber and that consists of a material, such as electrolytic ally deposited nickel, that has an emissivity coefficient, as measured at 300K, of 0.1 or less and a hardness of at least 3.5 Moh. Polycrystalline silicon is produced from silicon-rich gases using such a CVD reactor system. | 05-09-2013 |
| 20130209684 | METHOD AND APPARATUS FOR IGNITING SILICON RODS OUTSIDE A CVD-REACTOR - A method and a device for igniting silicon rods outside a CVD-reactor. A silicon rod is disposed inside a chamber of a casing of an ignition device. At least one pair of contact electrodes applies a first voltage supplied by a transformer with an open circuit voltage sufficiently high to initialize a current flow in and ignite the silicon rod. Optionally, the silicon rod may be heated by a current flow and/or an external heating unit to a temperature within a predetermined range. The silicon rod is removed from the ignition device and may be exposed to a depositing process inside a CVD-reactor. The ignition of the silicon rod outside the CVD-reactor facilitates a new ignition for the depositing process. | 08-15-2013 |
| 20140329011 | COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si | 11-06-2014 |
| 20150315215 | COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si | 11-05-2015 |
| 427255170 | Halogen containing coating, reactant, or precursor | 1 |
| 20090297708 | APPARATUS FOR PRODUCING TRICHLOROSILANE, AND METHOD FOR PRODUCING TRICHLOROSILANE - This apparatus for producing trichlorosilane, includes a reactor provided with gas inlets and gas outlets, a plurality of silicon seed rods held in the reactor, a heating apparatus that is provided in the reactor and heats the silicon seed rods, and a raw material gas supply system that is connected to the gas inlets and capable of selecting and supplying one of a first raw material gas for depositing polycrystalline silicon which contains trichlorosilane and hydrogen gas and a second raw material gas for producing trichlorosilane which contains silicon tetrachloride and hydrogen gas, wherein when the raw material gas supply system supplies the second raw material gas into the reactor, the silicon tetrachloride and hydrogen gas are reacted to produce a reaction product gas containing trichlorosilane. | 12-03-2009 |
| 427255190 | Metal oxide containing coating | 3 |
| 20090004386 | Protective Coating of Silver - In the method, silver is protected against tarnishing using an Atomic Layer Deposition method. In the Atomic Layer Deposition method, a thin film coating is formed 5 on the surface of silver by depositing successive molecule layers of the coating material. For example aluminium oxide (Al 2O3) or zirconium oxide may be used as the coating material. | 01-01-2009 |
| 20110081486 | NON-ORTHOGONAL COATER GEOMETRY FOR IMPROVED COATINGS ON A SUBSTRATE - A coating apparatus includes non-orthogonal coater geometry to improve coatings on a glass ribbon, and to improve yields of such coatings. The apparatus includes a first arrangement to move the ribbon along a first imaginary straight line through a coating zone provided in a glass forming chamber. The coater has a coating nozzle and an exhaust slot, each have a longitudinal axis. The coating nozzle directs coating vapors toward the coating zone, and the exhaust slot removes vapors from the coating zone. A second arrangement mounts the coater in spaced relation to the path with the coating nozzle and the exhaust slot facing the coating zone. A second imaginary straight line is normal to the longitudinal axis of the coating nozzle, and the first imaginary line and the second imaginary line subtend an angle in the range of greater than zero degrees to 90 degrees. | 04-07-2011 |
| 20110244129 | METHOD OF MAKING CUTTING TOOL INSERTS WITH HIGH DEMANDS ON DIMENSIONAL ACCURACY - A method of making cutting tool inserts with high demands on dimensional accuracy includes:
| 10-06-2011 |
| 427255210 | Base includes inorganic metal containing compound | 5 |
| 20100304026 | Method and Apparatus for Manufacturing a Nanowire - A method and an apparatus for manufacturing a nanowire are provided. The method for manufacturing a nanowire includes i) providing a source gas into a chamber, ii) controlling the temperature of a substrate received in the chamber separately from the temperature of the source gas, iii) forming a temperature gradient on the substrate, and iv) forming a nanowire having at least one growth condition selected from a group of growth speed and growth direction controlled according to the temperature gradient on the substrate. | 12-02-2010 |
| 20110081487 | METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT - Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment. | 04-07-2011 |
| 20150330508 | METHOD FOR COATING A SLIDING ELEMENT AND SLIDING ELEMENT, IN PARTICULAR A PISTON RING - The invention relates to a method wherein nanoparticle are first produced and then infused in the coating during the coating process by means of a PVD and/or CVD method. A sliding element comprises a coating formed by means of a PVD and/or CVD method comprising separately produced nanoparticles. | 11-19-2015 |
| 427255220 | Iron compound containing base (e.g., ferric oxide, etc.) | 2 |
| 20090324825 | Method for Depositing an Aluminum Nitride Coating onto Solid Substrates - Embodiments related to chemical vapor deposition of aluminum nitride onto surfaces are provided. In particular, methods are provided for coating AlN onto solid surfaces by heating and vaporizing an aluminum nitride precursor and exposing solid surfaces to the heated and vaporized aluminum nitride precursor. In an embodiment, the aluminum nitride precursor is AlCl | 12-31-2009 |
| 20110117276 | MULTILAYER NITRIDE-CONTAINING COATINGS - This invention relates to erosion resistant coatings comprising at least 2 sublayer systems in which each sublayer system is separated from another by an interlayer, wherein (i) each sublayer system is the same or different and comprises at least 4 layers, (ii) said layers comprise alternating layers of a nitride-containing compound of stoichiometric composition and a nitride-containing compound of nonstoichiometric composition, (iii) each sublayer system has a thickness of greater than about 0.4 microns, and (iv) each interlayer is the same or different and comprises a metal-containing compound. This invention also relates to a method for producing the coatings and to articles, e.g., gas turbine compressor rotor blade and stator vanes, coated with the coatings. | 05-19-2011 |
