Class / Patent application number | Description | Number of patent applications / Date published |
427252000 | By decomposing metallic compound (e.g., pack process, etc.) | 42 |
20080220165 | Gas Turbine Engine Components With Aluminide Coatings And Method Of Forming Such Aluminide Coatings On Gas Turbine Engine Components - A turbine engine component ( | 09-11-2008 |
20080299310 | Nickel-base superalloy having an optimized platinum-aluminide coating - A nickel-base superalloy substrate includes a surface region having an integrated aluminum content of from about 18 to about 24 percent by weight and an integrated platinum content of from about 18 to about 45 percent by weight, with the balance components of the substrate. The substrate is preferably a single-crystal advanced superalloy selected for use at high temperatures. The substrate may optionally have a ceramic layer deposited over the platinum-aluminide region, to produce a thermal barrier coating system. The platinum-aluminide region is produced by diffusing platinum into the substrate surface, and thereafter diffusing aluminum into the substrate surface. | 12-04-2008 |
20090022891 | METHOD OF FORMING METAL FILM - A method of forming a metal film, comprising the steps of:
| 01-22-2009 |
20090087561 | METAL AND METALLOID SILYLAMIDES, KETIMATES, TETRAALKYLGUANIDINATES AND DIANIONIC GUANIDINATES USEFUL FOR CVD/ALD OF THIN FILMS - Metal and metalloid precursors useful for forming metal-containing films on substrates, including amide precursors, tetraalkylguanidinate precursors, ketimate and dianionic guanidinate precursors. The precursors of the invention are readily formed and conveniently used to carry out chemical vapor deposition or atomic layer deposition at low temperature, e.g., at temperature below 400° C. | 04-02-2009 |
20090104352 | Method of film formation and computer-readable storage medium - A film formation method includes a first stage including a period of heating a target substrate to a film formation temperature, and supplying a metal compound gas and a nitrogen-containing reducing gas onto the target substrate, thereby directly depositing a metal nitride film by CVD on a target substrate; and a second stage of supplying the metal compound gas and the nitrogen-containing reducing gas, thereby further depositing a metal nitride film by CVD on the metal nitride film initially deposited by the first stage, to obtain a predetermined film thickness. Each of the first stage and the second stage is arranged to repeat one or more times a cycle including a first step of supplying the metal compound gas and the nitrogen-containing reducing gas and a second step of stopping the metal compound gas and supplying the nitrogen-containing reducing gas. | 04-23-2009 |
20090117271 | FILM FORMING APPARATUS AND A BARRIER FILM PRODUCING METHOD - A film forming apparatus is used in a semiconductor manufacturing process and a method for producing a barrier film is used for a semiconductor. When a metallic gas and a reactive gas are alternatively flown, a back-flow preventing gas and an auxiliary gas are flown, the reactive gas and the auxiliary gas are moved with the flow of the back-flow preventing gas, and radicals are produced by being in contact with them to a catalytic material. Since the metallic material gas is not in contact with the catalytic material, the catalytic material is not degraded. A shower plate may be disposed between a radical producing chamber and a reaction chamber, so that the radicals are fed into the reaction chamber through holes. Thus, a barrier film having low resistance and excellent coverage is formed. | 05-07-2009 |
20090136664 | Method for forming aluminide diffusion coatings - A method for forming an aluminide coating comprising diffusion coating a substrate with the use of an aluminum-based compound and a halide activator, each having a sulfur concentration of less than about 20 parts-per-million by weight. | 05-28-2009 |
20090162550 | COPPER (I) AMIDINATES AND GUANIDINATES, MIXED LIGAND COPPER COMPLEXES, AND COMPOSITIONS FOR CHEMICAL VAPOR DEPOSITION, ATOMIC LAYER DEPOSITION, AND RAPID VAPOR DEPOSITION OF COPPER - Copper (I) amidinate and copper (I) guanidinate precursors for forming copper thin films in the manufacture of microelectronic device articles, e.g., using chemical vapor deposition, atomic layer deposition, and rapid vapor deposition processes, as well as mixed ligand copper complexes suitable for such processes. Also described are solvent/additive compositions for copper precursors for CVD/ALD of copper metal films, which are highly advantageous for liquid delivery of such copper amidinates and copper guanidinates, as well as for other organocopper precursor compounds and complexes, e.g., copper isoureate complexes. | 06-25-2009 |
20090291208 | ATOMIC LAYER DEPOSITION USING METAL AMIDINATES - Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN′-diispropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates b the reaction of alternating doses of cobalt(II) bis(N,N′-diispropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. | 11-26-2009 |
20090324822 | METHOD FOR DEPOSITING HARD METALLIC COATINGS - A method for depositing a hard metallic chrome coating or similar metal by chemical vapor deposition on a metallic substrate, includes: a) preparing a solution containing, in an oxygen atom depleted solvent, i) a molecular compound of the bis(arene) family that's a precursor of the deposited metal with a decomposition temperature 300° C.-550° C., and ii) a chlorinated additive; b) introducing the solution as aerosol into a heated evaporator at a temperature between the solvent boiling temperature and the precursor decomposition temperature (PDT); and c) driving the vaporized aerosol from the evaporator towards a CVD reactor including a susceptor carrying the substrate, heated above the PDT, up to 550° C., the evaporator and CVD reactor being subjected to atmospheric pressure. This DLI-CVD method performed at low temperature and atmospheric pressure enables continuous industrial treatment of large metallic plates, producing hard, monolayer or nanostructured multilayer metallic coatings. An appropriate injectable solution is also described. | 12-31-2009 |
20100075035 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - A film formation method is disclosed for depositing a metal film on a target substrate by supplying a metal carbonyl source in gas phase to a surface of the target substrate and decomposing the source near the surface of the target substrate. The method includes a step of preferentially decomposing the metal carbonyl source in an area near the outer peripheral portion of the target substrate when the metal film is being deposited on the surface of the target substrate. As a result, a CO concentration in the atmosphere is increased locally near the outer peripheral portion of the target substrate and the depositing of the metal film on the outer peripheral portion is better controlled. | 03-25-2010 |
20100316799 | FILM FORMING METHOD AND FILM FORMING APPARATUS - Disclosed is a film forming method including the steps of: producing a monovalent carboxylic acid metal salt gas by reacting a bivalent carboxylic acid metal salt with a carboxylic acid; supplying the monovalent carboxylic acid metal salt gas on a substrate to accumulate a monovalent carboxylic acid metal salt film; and decomposing the monovalent carboxylic acid metal salt film by supplying energy to the substrate formed with the monovalent carboxylic acid metal salt film so as to form a metallic film. | 12-16-2010 |
20110151120 | SURFACE TREATING METHOD FOR MAKING THE SAME - A surface treating method for making a housing having a main body includes forming a plating layer on the main body, coating an adhesive on the plating layer to form an adhesive layer, and coating a lacquer on the adhesive layer to form an outer layer. The adhesive comprises polyolefin chloride. | 06-23-2011 |
20110318488 | ORGANORUTHENIUM COMPOUND FOR CHEMICAL DEPOSITION AND CHEMICAL DEPOSITION PROCESS USING THE ORGANORUTHENIUM COMPOUND - An object of the present invention is to provide an organoruthenium compound which has good film formation characteristics as an organoruthenium compound for chemical deposition, has a high vapor pressure, and can easily form a film even when hydrogen is used as a reactant gas. The present invention relates to an organoruthenium compound, dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium (II) which can have isomers 1 to 3, wherein the content of the isomer 2 is 30% by mass or more, the content of the isomer 3 is 30% by mass or less, and the balance is the isomer 1. | 12-29-2011 |
20120064248 | METHOD FOR FORMING CU FILM AND STORAGE MEDIUM - In a method for forming a Cu film, a substrate is loaded in a processing chamber and a gaseous film-forming source material including monovalent amidinate copper and a gaseous reducing agent including a carboxylic acid are introduced into the processing chamber. Then, a Cu film is deposited on the substrate by reacting the film-forming source material and the reducing agent together on the substrate. | 03-15-2012 |
20120231164 | Precursors and Methods for the Atomic Layer Deposition of Manganese - Methods and precursors are provided for deposition of elemental manganese films on surfaces using metal coordination complexes comprising an eta-3-bound monoanionic four-electron donor ligands selected from amidinate, mixed ene-amido and allyl, or eta-2 bound amidinate ligand. The ligands are selected from amidinate, ene-amido, and allyl. | 09-13-2012 |
20120251724 | BETA-KETOIMINE LIGAND, METHOD OF PREPARING THE SAME, METAL COMPLEX COMPRISING THE SAME AND METHOD OF FORMING THIN FILM USING THE SAME - The β-ketoimine ligand is represented by the following formula 1: | 10-04-2012 |
20120321786 | SYSTEM FOR MULTI-REGION PROCESSING - A gas distribution structure for supplying reactant gases and purge gases to independent process cells to deposit thin films on separate regions of a substrate is described. Each process cell has an associated ring purge and exhaust manifold to prevent reactive gases from forming deposits on the surface of the wafer between the isolated regions. Each process cell has an associated showerhead for conveying the reactive gases to the substrate. The showerheads can be independently rotated to simulate the rotation parameter for the deposition process. | 12-20-2012 |
20130022744 | METHOD OF FORMING NOBLE METAL LAYER USING OZONE REACTION GAS - A noble metal layer is formed using ozone (O | 01-24-2013 |
20130059078 | USE OF RUTHENIUM TETROXIDE AS A PRECURSOR AND REACTANT FOR THIN FILM DEPOSITIONS - Disclosed are atomic layer deposition methods using ruthenium-containing precursors to form ruthenium-containing films for use in the manufacture of semiconductor, photovoltaic, LCD-TFT, or flat panel type devices. | 03-07-2013 |
20130183446 | METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM - Disclosed is a method for forming a Ge—Sb—Te film, in which a substrate is disposed within a process chamber, a gaseous Ge material, a gaseous Sb material, and a Te material are introduced into the process chamber, so that a Ge—Sb—Te film formed of Ge | 07-18-2013 |
20130202794 | METAL FILM DEPOSITION - Disclosed are modified Atomic Layer Deposition processes used to deposit metal films on a substrate. | 08-08-2013 |
20130251903 | DIAZADIENE-BASED METAL COMPOUND, METHOD FOR PREPARING SAME AND METHOD FOR FORMING A THIN FILM USING SAME - The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands. | 09-26-2013 |
20130330473 | Atomic Layer Deposition of Transition Metal Thin Films Using Boranes as the Reducing Agent - A method for forming a metal comprises contacting a compound having formula 1 with a compound having formula 2 with an amine borane: | 12-12-2013 |
20130344243 | Organic Platinum Compound For Chemical Vapor Deposition, And Chemical Vapor Deposition Method Using Organic Platinum Compound - The present invention is an organoplatinum compound for producing a platinum thin film or a platinum compound thin film by chemical vapor deposition, wherein the organoplatinum compound is represented by the following formula, and includes a divalent platinum atom, and hexadiene or a hexadiene derivative and alkyl anions coordinated to the divalent platinum atom. In the following formula, R | 12-26-2013 |
20140023785 | Method For Producing Nickel-Containing Films - Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented by formula (I): | 01-23-2014 |
20140057050 | ORGANIC RUTHENIUM COMPOUND FOR CHEMICAL VAPOR DEPOSITION RAW MATERIAL AND PRODUCTION METHOD FOR SAID ORGANIC RUTHENIUM COMPOUND - The present invention is an organoruthenium compound for a chemical vapor deposition raw material, including dodecacarbonyl triruthenium represented by the following chemical formula, wherein the iron (Fe) concentration is 1 ppm or less. The DCR in the present invention can be produced by obtaining crude DCR by directly carbonylating ruthenium through allowing a ruthenium salt and carbon monoxide to react with each other and by purifying the crude DCR by a sublimation method. In the synthesis step, the concentration of Fe in the obtained crude DCR is preferably set at 10 ppm or less. | 02-27-2014 |
20140287141 | Process for Preparing Trialkyl Compounds of Metals of Group IIIA - The invention relates to a process for preparing trialkylmetal compounds of the general formula R | 09-25-2014 |
20150030772 | CHEMICAL VAPOR DEPOSITION RAW MATERIAL COMPRISING ORGANOPLATINUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING THE CHEMICAL VAPOR DEPOSITION RAW MATERIAL - A chemical vapor deposition raw material for producing a platinum thin film or a platinum compound thin film by a chemical vapor deposition method, wherein the chemical vapor deposition raw material includes an organoplatinum compound having cyclooctadiene and alkyl anions coordinated to divalent platinum, and the organoplatinum compound is represented by the following formula. Here, one in which R | 01-29-2015 |
20150044368 | PLACING TABLE STRUCTURE - Provided is a placing table structure which is disposed in a processing container and has a subject to be processed thereon so as to form a thin film on the subject in the processing container by using raw material gas which generates thermal decomposition reaction having reversibility. The placing table structure is provided with a placing table for the purpose of placing the subject to be processed on a placing surface, i.e., an upper surface of the placing table structure, and a decomposition suppressing gas supply means which is arranged in the placing table for the purpose of supplying decomposition suppressing gas, which suppresses thermal decomposition of the raw material gas, toward a peripheral section of the subject placed on the placing surface of the placing table. | 02-12-2015 |
20150299853 | EVAPORATOR, DEPOSITION ARRANGEMENT, DEPOSITION APPARATUS AND METHODS OF OPERATION THEREOF - A depositing arrangement for evaporation of a material including an alkali metal or alkaline earth metal, and for deposition of the material on a substrate ( | 10-22-2015 |
20160032455 | HIGH THROUGH-PUT AND LOW TEMPERATURE ALD COPPER DEPOSITION AND INTEGRATION - Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate. | 02-04-2016 |
20160115587 | CHEMICAL VAPOR DEPOSITION RAW MATERIAL CONTAINING ORGANIC NICKEL COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING THE CHEMICAL VAPOR DEPOSITION RAW MATERIAL - The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. | 04-28-2016 |
20160122867 | DEPOSITION METHOD FOR TUNGSTEN-CONTAINING FILM USING TUNGSTEN COMPOUND, AND PRECURSOR COMPOSITION FOR DEPOSITING TUNGSTEN-CONTAINING FILM, COMPRISING TUNGSTEN COMPOUND - The present disclosure relates to a deposition method for a tungsten-containing film using a tungsten compound and a precursor composition for depositing the tungsten-containing film including the tungsten compound. | 05-05-2016 |
20160145741 | INJECTION NOZZLE FOR AEROSOLS AND THEIR METHOD OF USE TO DEPOSIT DIFFERENT COATINGS VIA VAPOR CHEMICAL DEPOSITION ASSISTED BY AEROSOL - This invention relates to an aerosol injection nozzle designed with a specific geometry to place materials vertically “upwards”, i.e., in opposite direction to the gravity and its method of use. With the nozzle is possible to deposited coatings, multilayer, composite materials, nanopins, nanorods, nanoclusters, nanoplates, nanowires, nanoparticles, “quantum dots” or semiconductors confined, of different materials, not limited to the examples above: TiO | 05-26-2016 |
20160251756 | GROUP 5 TRANSITION METAL-CONTAINING COMPOUNDS FOR VAPOR DEPOSITION OF GROUP 5 TRANSITION METAL-CONTAINING FILMS | 09-01-2016 |
427253000 | Halogen containing compound | 6 |
20120070578 | METHOD FOR PRODUCING TITANIUM METAL - Disclosed is a method for producing titanium metal, which comprises: (a) a step in which a mixed gas is formed by supplying titanium tetrachloride and magnesium into a mixing space that is held at an absolute pressure of 50-500 kPa and at a temperature not less than 1700° C.; (b) a step in which the mixed gas is introduced into a deposition space; (c) a step in which titanium metal is deposited and grown on a substrate for deposition; and (d) a step in which the mixed gas after the step (c) is discharged. In this connection, the deposition space has an absolute pressure of 50-500 kPa, the substrate for deposition is arranged in the deposition space, and at least a part of the substrate for deposition is held within the temperature range of 715-1500° C. | 03-22-2012 |
20120177823 | METHOD FOR FORMING A PROTECTIVE COATING CONTAINING ALUMINUM ON THE SURFACE OF A METAL PART - A method for forming a protective coating containing aluminum on the surface of a metal part, wherein the part is contacted with a carburizer made of an aluminum alloy, at a treatment temperature and in a chamber, the atmosphere of which contains an active gas which reacts with the carburizer to form a gaseous aluminum halide, which decomposes upon contacting the part while depositing aluminum metal thereon. In the method the aluminum alloy of the carburizer includes at least one element, zirconium and/or hafnium, the active gas reacting with the carburizer to also form a halide of the reactive element which decomposes upon contacting the part while depositing the element thereon at the same time as the aluminum. | 07-12-2012 |
20130029043 | MASKANT FREE DIFFUSION COATING PROCESS - Selected areas of a component are covered with a maskant chamber during a coating process to protect the areas from the coating vapor. The covered areas are further protected by a flow of an inert gas in the maskant chamber. | 01-31-2013 |
20130122198 | PROCESS FOR FORMING A PROTECTIVE COATING ON THE SURFACE OF A METAL PART - The present invention relates to a process for forming on the surface of a metal part a protective coating containing aluminium and zirconium, in which process said part and a cement made of an aluminium alloy are brought into contact with a gas at a treatment temperature in a treatment vessel, the gas comprising a carrier gas and an activator, the activator reacting with the cement to form a gaseous aluminium halide that decomposes on the surface of the part, depositing metallic aluminium thereon, the activator containing a zirconium salt such as ZΓO (¾ obtained from granules of a zirconium salt), disassociation reactions of said zirconium salt taking place within a disassociation temperature range with formation of a Zr metal coating on the surface of the part, the assembly comprising the part, the cement and the zirconium salt granules is progressively heated in the chamber from room temperature up to the treatment temperature, the process being characterized in that the treatment chamber is maintained at an overpressure with no carrier gas flow throughout the temperature range corresponding to the disassociation reactions of the zirconium salt. | 05-16-2013 |
20150110958 | GERMANIUM- AND ZIRCONIUM-CONTAINING COMPOSITIONS FOR VAPOR DEPOSITION OF ZIRCONIUM-CONTAINING FILMS - Disclosed are Germanium- and Zirconium-containing precursors having one of the following formulae: | 04-23-2015 |
20150125606 | Method of Forming Mask Structure, Film Forming Apparatus and Non-Transitory Storage Medium - A method of forming an etching mask structure on an insulating film containing silicon and oxygen includes forming a first silicon film on the insulating film formed on a substrate, forming a reaction blocking layer on a surface layer of the first silicon film, forming a second silicon film on the reaction blocking layer; and forming a tungsten film by replacing silicon of the second silicon film with tungsten by supplying a process gas containing a tungsten compound onto the second silicon film. | 05-07-2015 |