| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427251000 | Moving the base | 8 |
| 20090017207 | Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates - A process and composition for preventing cracking in composite structures comprising a metal coated substrate and a selenide, sulfide or mixed selenide sulfide film. Specifically, cracking is prevented in the coating of molybdenum coated substrates upon which a copper, indium-gallium diselenide (CIGS) film is deposited. Cracking is inhibited by adding a Se passivating amount of oxygen to the Mo and limiting the amount of Se deposited on the Mo coating. | 01-15-2009 |
| 20090148598 | Methods and Apparatus to Provide Group VIA Materials to Reactors for Group IBIIIAVIA Film Formation - Processes and apparatus are described that form a solar cell absorber on a surface of a workpiece by reacting a precursor layer disposed on the surface of the workpiece with an absorber constituent vapor in a heating chamber. The absorber constituent material is delivered from an absorber constituent material delivery system in molten form into a container in the heating chamber and vaporized to be used during the reaction. | 06-11-2009 |
| 20110274838 | SYSTEM AND PROCESS FOR THE CONTINUOUS VACUUM COATING OF A MATERIAL IN WEB FORM - The system ( | 11-10-2011 |
| 20120282401 | METHOD OF FORMING A PARTIAL DEPOSITION LAYER AND APPARATUS OF FORMING A PARTIAL DEPOSITION LAYER - A method of forming a partial deposition layer and an apparatus of forming the partial deposition layer are provided. A substrate is provided over an evaporation plate. A shielding plate is placed between the evaporation plate and the substrate such that the shielding plate shields a first portion of the substrate and exposes a second portion of the substrate. An evaporation process is performed when the substrate is moving in a predetermined direction such that a evaporation source on the evaporation plate is deposited on the exposed second portion of the substrate but not deposited on the shielded first portion of the substrate. | 11-08-2012 |
| 20140030434 | APPARATUS AND METHOD FOR HIGH-THROUGHPUT CHEMICAL VAPOR DEPOSITION - A device for depositing at least one especially thin layer onto at least one substrate includes a process chamber housed in a reactor housing and includes a movable susceptor which carries the at least one substrate. A plurality of gas feed lines run into said process chamber and feed different process gases which comprise layer-forming components. Said process gases can be fed to the process chamber in subsequent process steps, thereby depositing the layer-forming components onto the substrate. In order to increase throughput, the process chamber is provided with a plurality of separate deposition chambers into which different gas feed lines run, thereby feeding individual gas compositions. The substrate can be fed to said chambers one after the other by moving the susceptor and depositing different layers or layer components. | 01-30-2014 |
| 20140044875 | IN-LINE DEPOSITION CHAMBER DESIGN FOR MULTI-STAGE PHYSICAL VAPOR DEPOSITION - An in-line multi-stage physical vapor deposition chamber is disclosed. The deposition chamber includes a cylindrical shaped main body, multiple dividers disposed within the main body and extending in radial directions to divide the interior space of the main body into multiple fan shaped zones, and a cylindrical shaped substrate holder disposed coaxially with the main body. The substrate holder is rotatable around a central axis, and individual substrates or a continuous flexible substrate is mounted on the substrate holder parallel to the central axis. Multiple metal source holders are disposed on the cylindrical sidewall of the main body in at least some of zones for mounting metal sources. Some zones are provided with heating mechanisms for heating the substrate. A load-lock chamber is connected to the main body for loading and unloading substrates into and from a first zone. | 02-13-2014 |
| 20150030771 | COBALT SUBSTRATE PROCESSING SYSTEMS, APPARATUS, AND METHODS - Electronic device processing systems including cobalt deposition are described. One system includes a mainframe having a transfer chamber and at least two facets, and one or more process chambers adapted to carry out a metal reduction or metal oxide reduction process and possibly an annealing processes on substrates, and one or more deposition process chambers adapted to carry out a cobalt deposition process. Other systems includes a transfer chamber, one or more load lock process chambers coupled to the transfer chamber that are adapted to carry out a metal reduction or metal oxide reduction process. Additional methods and systems for cobalt deposition processing of substrates are described, as are numerous other aspects. | 01-29-2015 |
| 20160145738 | Alcohol Assisted ALD Film Deposition - Methods of depositing a metal selectively onto a metal surface relative to a dielectric surface are described. Methods include reducing a metal oxide surface to a metal surface and protecting a dielectric surface to minimize deposition thereon and exposing the substrate to a metal precursor and an alcohol to deposit a film. | 05-26-2016 |
