| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427592000 | Resistance heating | 7 |
| 20160122875 | CHEMICAL VAPOR DEPOSITION REACTOR WITH FILAMENT HOLDING ASSEMBLY - Polysilicon crystalline rods are formed by chemical vapor deposition in the reaction chamber of a Siemens reactor. Filament holding assemblies secure vertically extending filaments to electrodes located along the floor of the reactor. A filament holding assembly includes a chuck support member that is mounted on an electrode and that has an upwardly tapering side surface. A chuck is seated on the chuck support member with at least a portion of the chuck support member received within a cavity defined in the base of the chuck with the side surface of the chuck support member engaging the surface that defines the cavity. The cavity can sized and shaped such that a gap is defined between the distal end of the chuck support member and an end wall surface of the cavity. The chuck has an upwardly opening receptacle that receives and holds the end portion of an upwardly extending filament. | 05-05-2016 |
| 427593000 | Vapor deposition employing resistance heating of substrate or coating material | 6 |
| 20090104377 | Vapor deposition head apparatus and method of coating by vapor deposition - A method of coating by vapor deposition including heating a material-heating cell provided in a chamber and having a nozzle part at its one end, for holding a solid material, supplying a fluid from the other end side of the chamber toward the nozzle part of the chamber to guide the material vaporized from the heated material-heating cell to the nozzle part to discharge the material from the nozzle part, and blowing a gas for controlling a vapor-deposition material straight movement, outside the nozzle part of the chamber toward the tip of the nozzle part to control the material discharged from the nozzle part so that the material can move straight ahead. | 04-23-2009 |
| 20100119734 | LAMINAR FLOW IN A PRECURSOR SOURCE CANISTER - A canister apparatus for supplying a precursor material is disclosed. The canister apparatus includes a container defining an interior volume adapted to confine a precursor material, a tubular member adapted to introduce a carrier gas into the container, wherein the tubular member includes a distal end, and perforated portion spaced apart from the distal end that includes a plurality of radial holes, and an outlet adapted to flow out the precursor material and the carrier gas. | 05-13-2010 |
| 20110217486 | METHOD FOR PROCESSING A CHEMICAL VAPOR DEPOSITION (CVD) AND A CVD DEVICE USING THE SAME - A method for CVD processing, comprises the steps of: fixing both ends of a silicon substrate to a pair of electrode mounts; lowering a resistance value of the silicon substrate by raising temperature of the silicon substrate with heat from an outer heater provided outside the case; heating the silicon substrate to a temperature at which the CVD process can be started by applying electrical current, and lowering an atmosphere temperature in the CVD space by stopping the outer heater; and forming a thin film on a surface of the silicon substrate by injecting source gas into the CVD space, when the silicon substrate is heated to the temperature at which the CVD process can be started and the atmosphere temperature in the CVD space is lowered to a predetermined temperature. | 09-08-2011 |
| 20110229658 | GRAPHITE ELECTRODE - The present invention relates to an electrode composed of carbon having at least two different zones, wherein an outer zone (A) forms the base of the electrode and carries one or more inner zones, wherein the innermost zone (B) projects from the zone (A) at the top and has a lower specific thermal conductivity than zone (A). | 09-22-2011 |
| 20110268892 | PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON - [Problem] To provide a process for producing polycrystalline silicon, which is capable of effectively preventing the formation of phosphorus-silicon compounds in the discharge gas discharged from the reaction vessel, and makes it possible to reuse a silane compound contained in the discharge gas. | 11-03-2011 |
| 20140356552 | HEATING EVAPORATION DEPOSITION APPARATUS AND EVAPORATION DEPOSITION METHOD USING THE SAME - A joule-heating evaporation deposition apparatus which deposits a layer on a target substrate, the apparatus including: a base substrate facing the target substrate including a plurality of target areas defined thereon; a plurality of heating electrodes on the base substrate; and a deposition material on the plurality of heating electrodes and an entire surface of the base substrate. Plural heating electrodes among the plurality of heating electrodes respectively face each target area among the plurality of target areas. | 12-04-2014 |
