| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427585000 | Chemical vapor deposition (e.g., electron beam or heating using IR, inductance, resistance, etc.) | 80 |
| 20080226841 | Diamond-like carbon films with low dielectric constant and high mechanical strength - The present invention discloses a method including: providing a substrate; and sequentially stacking layers of two or more diamond-like carbon (DLC) films over the substrate to form a composite dielectric film, the composite dielectric film having a k value of about 1.5 or lower, the composite dielectric film having a Young's modulus of elasticity of about 25 GigaPascals or higher. | 09-18-2008 |
| 20080241423 | HIGH K DIELECTRIC GROWTH ON METAL TRIFLATE OR TRIFLUOROACETATE TERMINATED III-V SEMICONDUCTOR SURFACES - Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H | 10-02-2008 |
| 20080254232 | COBALT NITRIDE LAYERS FOR COPPER INTERCONNECTS AND METHODS FOR FORMING THEM - An interconnect structure for integrated circuits incorporates a layer of cobalt nitride that facilitates the nucleation, growth and adhesion of copper wires. The cobalt nitride may deposited on a refractory metal nitride or carbide layer, such as tungsten nitride or tantalum nitride, that serves as a diffusion barrier for copper and also increases the adhesion between the cobalt nitride and the underlying insulator. The cobalt nitride may be formed by chemical vapor deposition from a novel cobalt amidinate precursor. Copper layers deposited on the cobalt nitride show high electrical conductivity and can serve as seed layers for electrochemical deposition of copper conductors for microelectronics. | 10-16-2008 |
| 20080268177 | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants - A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C | 10-30-2008 |
| 20090004405 | Thermal Batch Reactor with Removable Susceptors - An apparatus and method for uniform heating and gas flow in a batch processing chamber are provided. The apparatus includes a quartz chamber body, removable heater blocks which surround the quartz chamber body, an inject assembly coupled to one side of the quartz chamber body, and a substrate boat having removable susceptors. In one embodiment, the boat may be configured with a plurality of susceptors to control substrate heating during batch processing. | 01-01-2009 |
| 20090074986 | METHOD OF PREVENTING ABNORMAL LARGE GRAINS FROM BEING INCLUDED INTO THIN NANO-CRYSTALLINE DIAMOND FILM - The present invention relates to a method of preventing abnormal large grains from being included in a NCD thin film during a hot filament CVD process by appropriately controlling the deposition condition regarding a temperature-measuring means, a deposition pressure, an electrical potential and/or the composition of a raw material gas flow. | 03-19-2009 |
| 20090081385 | METHODS OF ATOMIC LAYER DEPOSITION USING HAFNIUM AND ZIRCONIUM-BASED PRECURSORS - Methods of forming a metal-containing film by atomic layer deposition is provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula II: | 03-26-2009 |
| 20090148628 | PROTECTIVE COATING SYSTEMS FOR GAS TURBINE ENGINE APPLICATIONS AND METHODS FOR FABRICATING THE SAME - Protective coating systems for gas turbine engine applications and methods for fabricating such protective coating systems are provided. An exemplary method of fabricating a protective coating system on a substrate comprises forming a bond coating on the substrate, forming a silicate layer on the bond coating, forming a thermal barrier coating overlying the silicate layer, and heating the thermal barrier coating. | 06-11-2009 |
| 20090155492 | METHOD AND APPARATUS FOR COATING GLASS - A method and apparatus for coating glass with a CVD method, the coating being deposited by delivering some of the coating material into coating in the form of solid particles, whose composition is substantially the same as the composition of the coating to be deposited and whose diameter is less than 200 nm. | 06-18-2009 |
| 20090238999 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE AND METHOD OF PREPARING THE SAME - An organic electroluminescent display device and a method of preparing the same are provided. The organic electroluminescent display device may include a first electrode formed on a substrate. A second electrode may be formed so as to be insulated from the first electrode. One or more organic layers may be interposed between the first electrode and the second electrode and include at least an emission layer. A protective layer may be formed so as to cover the second electrode. The protective layer may have a surface roughness (rms) of about 5 Å to about 50 Å. The organic electroluminescent display device including a protective layer having a low surface roughness may benefit from superior lifespan characteristics. | 09-24-2009 |
| 20090297732 | Method for making carbon nanotube films - A method for making a carbon nanotube film, the method comprising the following steps of: (a) supplying a substrate; (b) forming at least one strip-shaped catalyst film on the substrate, a width of the strip-shaped catalyst films ranging from approximately 1 micrometer to 20 micrometers; (c) growing at least one strip-shaped carbon nanotube array on the substrate using a chemical vapor deposition method; and (d) causing the at least one strip-shaped carbon nanotube array to fold along a direction parallel to a surface of the substrate, thus forming at least one carbon nanotube film. | 12-03-2009 |
| 20100047474 | DEPOSITION APPARATUS HAVING THERMAL HOOD - A deposition apparatus includes a coating chamber and a coating zone within the coating chamber for coating work pieces. A heating source heats the coating zone, and a thermal hood within the coating chamber is located adjacent to the coating zone for controlling a temperature of the coating zone. | 02-25-2010 |
| 20100062185 | METHOD FOR PLATING FILM ON A TRANSMISSION MECHANISM - A method for plating films on a transmission mechanism includes the steps of: cleaning the transmission mechanism; injecting hydrogen and tetra-methylsilane gases and applying an electric current to generate a bias electric field within a working chamber, thereby forming an adherent film on the transmission mechanism; injecting hydrocarbon gas together with the hydrogen and tetra-methylsilane gases into the working chamber, thereby forming a mixed film on the adherent film; and injecting the hydrogen and tetra-methylsilane gases together with hydrocarbon gas into the working chamber while maintaining the bias electric field at 400-700 V and the applied electric current at 800-1500 watt, thereby forming a noncrystalline DLC film on the mixed film. | 03-11-2010 |
| 20100092697 | SCALABLE, HIGH-THROUGHPUT, MULTI-CHAMBER EPITAXIAL REACTOR FOR SILICON DEPOSITION - One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors. | 04-15-2010 |
| 20100092698 | SCALABLE, HIGH-THROUGHPUT, MULTI-CHAMBER EPITAXIAL REACTOR FOR SILICON DEPOSITION - One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl | 04-15-2010 |
| 20100143609 | METHOD FOR FORMING LOW-CARBON CVD FILM FOR FILLING TRENCHES - A method of forming a low-carbon silicon-containing film by CVD on a substrate having trenches includes: introducing a silicon-containing compound having three or less hydrocarbon units in its molecule and having a boiling temperature of 35° C. to 220° C.; applying RF power to the gas; and depositing a film on a substrate having trenches wherein the substrate is controlled at a temperature such that components of the silicon-containing compound are at least partially liquidified on the substrate, thereby filling the trenches with the film. | 06-10-2010 |
| 20100189929 | COATING DEVICE AND DEPOSITION APPARATUS - A coating device for use with an electron beam vapor deposition apparatus includes a crucible portion and a nozzle portion. The crucible portion includes a gas inlet port, a heating zone for presenting a source coating material to be heated, and a flow passage exposed to the heating zone and fluidly connected with the inlet port. The nozzle portion of the coating device includes an outlet orifice fluidly connected with the flow passage for jetting a coating stream from the coating device. | 07-29-2010 |
| 20100209625 | VOLTAGE VARIABLE TYPE THINFILM DEPOSITION METHOD AND APPARATUS THEREOF - A voltage variable-type thin film deposition device and method is disclosed. The voltage variable-type thin film deposition method includes applying bias voltage while continuously varying the magnitude of the bias voltage for a period of time set by a user, —determining whether to use preset bias voltage values; depositing a thin film based on the preset bias voltage values if, as a result of the determination, it is determined to use the preset bias voltage values, and setting new bias voltage values if it is determined to use new bias voltage values; selecting whether to apply voltage from low bias voltage or from high bias voltage when new bias voltage values are set; selecting an increasing/decreasing slop type for the bias voltage when the starting voltage is selected; and starting to deposit the thin film when the voltage slope is selected. | 08-19-2010 |
| 20100209626 | METHODS FOR HEATING WITH LAMPS - Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor. | 08-19-2010 |
| 20100215872 | High Throughput Multi-Wafer Epitaxial Reactor - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 08-26-2010 |
| 20100221453 | BIAS ENHANCED NUCLEATION OF DIAMOND FILMS IN A CHEMICAL VAPOR DEPOSITION PROCESS - Diamonds are used to nucleate diamond and diamond-like carbon films in a chemical vapor deposition process using bias enhancement. A negative bias is applied to the substrate, such that a cationic form of the diamond is accelerated toward the substrate during the nucleation phase of the deposition. In this manner, the diamondoid may be embedded or partially embedded in the substrate and/or growing film, increasing the adhesion of the film to the substrate. According to the present embodiments, it is not necessary to mechanically pre-seed the substrate for nucleation purposes. | 09-02-2010 |
| 20100247807 | ELECTRON GUN EVAPORATION APPARATUS AND FILM FORMATION METHOD USING THE ELECTRON GUN EVAPORATION APPARATUS - An electron gun evaporation apparatus capable of efficiently using an evaporation source includes an electron beam position controller which determines, as an applicable range, a range within which the distribution of the film thickness growth rate is almost constant in each scanning direction of an electron beam to be applied to an evaporation source in a crucible for the irradiation position of the electron beam, on the basis of information pertaining to the electron beam irradiation position and the film thickness growth rate in the electron beam irradiation position. | 09-30-2010 |
| 20100285238 | METHODS OF FORMING GLASS ON A SUBSTRATE - Disclosed is a deposition process for forming a glass film. An embodiment comprising the steps of disposing a substrate in a chemical vapor deposition chamber and exposing the substrate surface to a SiO | 11-11-2010 |
| 20100297362 | METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES - A method for processing an object with miniaturized structures is provided. The method includes feeding a reaction gas onto a surface of the object. The method also includes processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object. The method further includes detecting interaction products of the beam with the object, and deciding whether the processing of the object is to be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object. The region to be processed is subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment are integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated. | 11-25-2010 |
| 20110033639 | APPARATUS AND PROCESS FOR CARBON NANOTUBE GROWTH - An apparatus is provided for growing high aspect ratio emitters ( | 02-10-2011 |
| 20110070381 | USE OF NITROGEN-BASED REDUCING COMPOUNDS IN BEAM-INDUCED PROCESSING - A system for beam-induced deposition or etching, in which a charged particle or laser beam can be directed to a work piece within a single vacuum chamber, either normally incident or at an angle. Simultaneously with beam illumination of the work piece, a deposition or etch precursor gas is co-injected or premixed with a purification compound and (optionally) a carrier gas prior to injection into the process chamber. The beam decomposes the deposition precursor gas to deposit a film only in areas illuminated by the beam, or decomposes the etch precursor gas to etch a film only in areas illuminated by the beam. Undesired impurities such as carbon in the deposited film are removed during film growth by interaction with adsorbed species on the work piece surface that are generated by interaction of the beam with adsorbed molecules of the film purification compound. Alternatively, the film purification compound can be used to inhibit oxidation of the material etched by the etch precursor gas. By co-injecting or premixing the deposition or etch precursor gas and film purification compound prior to injection, the deposition or etch process may be optimized with respect to growth/etch rate and achievable material purity. | 03-24-2011 |
| 20110081504 | Method for depositing a thin-film polymer in a low-pressure gas phase - The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber ( | 04-07-2011 |
| 20110123727 | MAGNETIC LAMINATED STRUCTURE AND METHOD OF MAKING - A method for making an article comprising a multilayered structure comprising a series of magnetic layers is provided. The method includes providing a substrate and depositing a series of magnetic layers on the substrate and disposing insulating layers between successive magnetic layers. Each magnetic layer has a thickness of at least about 2 micrometers and magnetic material has an average grain size less than 200 nm. | 05-26-2011 |
| 20110129621 | SYSTEMS AND METHODS FOR DISTRIBUTING GAS IN A CHEMICAL VAPOR DEPOSITION REACTOR - Systems and methods for the production of polysilicon or another material via chemical vapor deposition in a reactor are provided in which gas is distributed using a silicon standpipe. The silicon standpipe can be attached to the reactor system using a nozzle coupler such that precursor gases may be injected to various portions of the reaction chamber. As a result, gas flow can be improved throughout the reactor chamber, which can increase the yield of polysilicon, improve the quality of polysilicon, and reduce the consumption of energy. | 06-02-2011 |
| 20110206865 | METHOD OF AND APPARATUS UTILIZING CARBON CORD FOR EVAPORATION OF METALS - A high temperature evaporator is made using an electrically insulating crucible and a heating element made of woven graphite fibers. The crucible is manufactured out of an electrically insulating block to the required shape, and channels are machined on the walls of the crucible. The woven graphite cord is threaded through the channels and is used as heating elements. Since the heating cords are made of woven graphite, they are very flexible and do not embrittle. They can be manufactured to various resistivity as needed, allowing for relatively inexpensive power supplies and low current power delivery. The cords are not fragile and do not break due to thermal shock or vibration. | 08-25-2011 |
| 20110287194 | DEVICE AND METHOD FOR COATING A SUBSTRATE USING CVD - The invention relates to a device for coating a substrate using CVD, in particular for coating with diamond or silicon, wherein a neat conductor array composed of a plurality of elongated heat conductors ( | 11-24-2011 |
| 20110311737 | VAPOR DEPOSITION APPARATUS FOR MINUTE-STRUCTURE AND METHOD THEREFOR - A vapor deposition apparatus for a minute-structure includes a surface acoustic wave device | 12-22-2011 |
| 20120121823 | PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM - An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack (<2 kÅ) to about or less than 200 Å, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity. The improved adhesion layer provides high adhesion energy for better adhesion with ultra low dielectric constant films to underlying barrier/liner layers. The resulting low dielectric film has nanometer-sized pores and tighter pore-size distribution, yielding a low dielectric constant film with a dielectric constant of about 2.5 or less. | 05-17-2012 |
| 20120141693 | ION SOURCES, SYSTEMS AND METHODS - Ion sources, systems and methods are disclosed. | 06-07-2012 |
| 20120156395 | PROCESS FOR APPLYING AMORPHOUS METAL - Ni-based refractory metallic glass coatings utilizing periodic table group five element vanadium in combination with other group 5 or 6 elements, particularly tantalum, chromium, or molybdenum, can be formed via co-sputtering with proper control of carrier gas pressure and/or bias voltage. The alloy forms fully amorphous coatings that are not predicted by the usual glass forming ability (GFA) criteria. These alloys exhibit high thermal stability, hardness values greater than TiN, smooth surface finishes, and a wide processing window. | 06-21-2012 |
| 20120201976 | CORE WIRE HOLDER FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON - One end side of a core wire holder | 08-09-2012 |
| 20120251738 | MAGNETIC FIELD ASSISTED DEPOSITION - Embodiments relate to applying a magnetic field across the paths of injected polar precursor molecules to cause spiral movement of the precursor molecules relative to the surface of a substrate. When the polar precursor molecules arrive at the surface of the substrate, the polar precursor molecules make lateral movements on the surface due to their inertia. Such lateral movements of the polar precursor molecules increase the chance that the molecules would find and settle at sites (e.g., nucleation sites, broken bonds and stepped surface locations) or react on the surface of the substrate. Due to the increased chance of absorption or reaction of the polar precursor molecules, the injection time or injection iterations may be reduced. | 10-04-2012 |
| 20120288643 | Multi-Zone Chuck - A method for affecting film growth on a substrate during a deposition process includes steps of: applying a first voltage or current to a first zone of a chuck adapted to hold the substrate in position, the film growth on at least a portion of the substrate proximate the first zone being affected as a function of a level of the first voltage or current; and applying a second voltage or current to a second zone of the chuck, the film growth on at least a portion of the substrate proximate the second zone being affected as a function of a level of the second voltage or current. | 11-15-2012 |
| 20120321818 | METHOD AND DEVICE FOR FORMING PIEZOELECTRIC/PRYOELECTRIC FILM - An electric field is formed between a material to be coated | 12-20-2012 |
| 20130052371 | MOVABLE LINER ASSEMBLY FOR A DEPOSITION ZONE IN A CVD REACTOR - A chemical vapor deposition (CVD) reactor comprises a deposition zone, a substrate carrier and a liner assembly. The deposition zone is constructed so as to have a positive pressure reactant gases fixed showerhead introducing reactant gas supporting thin film CVD deposition. The substrate carrier movably supports a substrate and the liner assembly within the deposition zone and is heated so as to be subjected to a CVD process. The liner assembly partly encloses selected portions of the deposition zone, particularly portions of the substrate carrier and thereby enclose a hot zone surrounding a substrate to be processed so as to retain heat in that zone but allows gas flow radially outwardly toward walls of a surrounding cold-wall reactor with exhaust ports surrounding the deposition zone that exhaust spent reactant gases. The liner assembly is a sink for solid reaction byproducts while gaseous reaction byproducts are pumped out at the exhaust ports. The liner assembly is linearly movable away from the fixed showerhead. | 02-28-2013 |
| 20130149469 | COMBINATORIAL RF BIAS METHOD FOR PVD - In some embodiments of the present invention, a shield is provided wherein the shield comprises a ceramic insulation material. The ceramic insulation material fills the space between the shield and the substrate surface and maintains a gap of less than about 2 mm and advantageously, less than about 1 mm. The shield may further be connected to ground through a low-pass filter operable to prevent the loss of high frequency RF power through the shield to ground but allow the dissipation of charge from the shield to ground through a low frequency or DC signal. In some embodiments, the ceramic insulating material further comprises a removable ceramic insert. The ceramic insert may be used to select the size of the aperture. The ceramic insert further comprises a slot operable to isolate the bottom lip of the ceramic insert from the upper portion for a PVD deposition. | 06-13-2013 |
| 20130209706 | APPARATUS AND METHOD FOR COATING SUBSTRATES USING THE EB/PVD PROCESS - An apparatus for coating substrates with a coating material is disclosed. The apparatus includes a frame and a crucible arrangement including a first crucible and a second crucible disposed on the frame. Only one first shaft is associated with the first crucible and only one second shaft is associated with the second crucible, where the only one first and second shafts are disposed in the frame beneath the first and second crucibles, respectively. Only one first lifting device is associated with the only one first shaft and only one second lifting device is associated with the only one second shaft, where the only one first and second lifting devices are disposed in the frame. The only one first and second shafts and the only one first and second lifting devices are laterally displaceable with the frame. | 08-15-2013 |
| 20130224400 | APPARATUS FOR TREATING AN OBJECT, MORE PARTICULARLY THE SURFACE OF AN OBJECT MADE OF POLYMER - An apparatus for treating an object, for example an object made of polymer for a light or headlamp of an automotive vehicle, comprises a vacuum chamber in which the object is intended to be placed; means for placing the chamber under vacuum; and ion bombardment means intended for treating the object, comprising an ion generator and at least one ion applicator intended to emit an ion beam. This apparatus comprises, in addition: a first airlock; means for selectively placing the vacuum chamber in communication with the first airlock and means for placing the first airlock under vacuum. The ion bombardment means are arranged outside of the vacuum chamber. The ion applicator is housed in the first airlock. | 08-29-2013 |
| 20130309419 | Ceramic Coating Deposition - A ceramic material is applied to a part. The part is placed in a deposition chamber and a first electric potential is applied to the part. Components are evaporated for forming the material. The evaporated components are ionized. The first electric potential is modulated so as to draw the ionized component to the part. The modulation comprises maintaining at least an ion current density in a range of 2-1000 mA/cm | 11-21-2013 |
| 20130337195 | METHOD OF GROWING GRAPHENE NANOCRYSTALLINE LAYERS - Systems and methods for applying a graphene nanocrystalline layer on a substrate in a vacuum chamber including positioning the substrate in the vacuum chamber, evacuating the vacuum chamber to a pressure of less than 10 | 12-19-2013 |
| 20140113084 | SHOWERHEAD DESIGNS OF A HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD) CHAMBER - Embodiments of process chambers and methods for performing HWCVD processes within such process chambers and depositing a thin film from two or more source compounds on a surface of a substrate are provided. In some embodiments, the process chamber includes a showerhead assembly disposed between a metal filament assembly and a substrate processing zone. The showerhead assembly includes a showerhead body and a dual-zone face plate with a plurality of first channels and second channels therein. A first source compound is delivered through the metal filament assembly to form radicals of the first source compound and pass through the first channels into the substrate processing zone without forming any plasma. A second source compound is delivered through the showerhead body into the second channels of the dual-zone face plate without passing through the metal filament assembly and without contacting the radicals until reaching the substrate processing zone. | 04-24-2014 |
| 20140170337 | Methods and Systems for Stabilizing Filaments in a Chemical Vapor Deposition Reactor - In various embodiments, systems, methods, and apparatus are provided for stabilizing filaments in a chemical vapor deposition (CVD) reactor system. A system includes a base plate having a plurality of electrical connections, a pair of filaments extending from the base plate, and a stabilizer connecting the pair of filaments. Each filament is in electrical contact with, and defines a conductive path between, the two electrical connections. A method of stabilizing the filaments includes providing the pair of filaments, and connecting the pair of filaments with at least one stabilizer. The stabilizer may include an electrically insulating material. | 06-19-2014 |
| 20140272195 | METHODS OF MANUFACTURE OF ENGINEERED MATERIALS AND DEVICES - Methods, systems, and devices are disclosed for precision fabrication of nanoscale materials and devices. In one aspect, a method to manufacture a nanoscale structure include a process to dissociate a feedstock substance including a gas or a vapor into constituents, in which the constituents include individual atoms and/or molecules. The method includes a process to deposit the constituents on a surface at a particular location. The method includes a process to grow layers layer by layer using two or more particle and/or energy beams to form a material structure, in which the energy beams include at least one of a laser beam or an atomic particle beam. | 09-18-2014 |
| 20140295105 | METHOD AND DEVICE FOR DEPOSITING SILICON ON A SUBSTRATE - The invention relates to a method and a device for depositing silicon on a substrate using a focused beam of charged particles. A precursor containing silicon is provided, said precursor being dissociated by the beam in the immediate vicinity of the substrate. The aim of the invention is to allow the deposition of silicon on a substrate in a particularly effective way, material-protecting and precise manner. For this purpose, polysilane is used as the precursor. | 10-02-2014 |
| 20150367452 | SHADOW MASKS AND METHODS FOR THEIR PREPARATION AND USE - A method of forming a shadow mask is provided. The method includes annealing at least one polymeric sheet to form at least one annealed polymeric sheet. The method also includes transferring a pattern from a primary mask to the annealed polymeric sheet using laser micromachining to form the shadow mask. | 12-24-2015 |
| 20160177447 | APPARATUS AND METHOD FOR MANAGING A TEMPERATURE PROFILE USING REFLECTIVE ENERGY IN A THERMAL DECOMPOSITION REACTOR | 06-23-2016 |
| 20190145004 | APPARATUS AND METHOD FOR MANAGING A TEMPERATURE PROFILE USING REFLECTIVE ENERGY IN A THERMAL DECOMPOSITION REACTOR | 05-16-2019 |
| 427586000 | Pyrolytic use of laser or focused light (e.g., IR, UV lasers to heat, etc.) | 10 |
| 20080206485 | DEVICES FOR EVALUATING MATERIAL PROPERTIES, AND RELATED PROCESSES - A device for measuring at least one property of a material sample is disclosed. The device includes at least one sensor element which is formed by a direct-write technique. The device can be an instrument for measuring strain in the sample, or for measuring other properties or attributes of a sample, such as temperature. A turbine engine disk on which components of property-measuring devices have been direct-written is also described. Methods of forming sensor elements for property-measuring devices are disclosed. | 08-28-2008 |
| 20090155493 | Combustion deposition of metal oxide coatings deposited via infrared burners - Certain example embodiments of this invention relate to a method of forming a coating on a glass substrate using combustion deposition. A glass substrate having at least one surface to be coated is provided. A reagent is selected. A precursor to be combusted with the reagent is introduced. Using at least one infrared burner, at least a portion of the reagent and the precursor are combusted to form a combusted material, with the combusted material including non-vaporized material. The glass substrate is provided in an area so that the glass substrate is heated sufficiently to allow the combusted material to form the coating, directly or indirectly, on the glass substrate. The coating may be substantially uniform. In certain example embodiments, a silicon oxide coating may be deposited, which increases visible transmission of the glass substrate by at least about 1.7%. | 06-18-2009 |
| 20110014399 | METHOD FOR PRODUCING A STIMULATION ELECTRODE - A stimulation electrode is provided having an electrically conducting electrode base member which is partially covered with an electrically insulating ceramic layer. The ceramic layer is formed of an oxide and/or an oxynitride of at least one metal of the group of titanium, niobium. tantalum, zirconium, aluminum and silicon. Various methods are provided for production of the stimulation electrode, including methods in which the ceramic layer is formed in situ by a thermal, chemical or electrochemical oxidation or oxynitridation process. The stimulation electrode may be used as a cardiac pacemaker electrode, a neuro-stimulation electrode, or another human implant. | 01-20-2011 |
| 20130273264 | INJECTION MOLDING TOOL WITH EMBEDDED INDUCTION HEATER - An injection molding tool includes a first mold die having a first tool face and a second mold die having a second tool face. The second mold die is configured to abut the first mold die, wherein the first tool face and second tool face are configured to partially define a part cavity between the first mold die and the second mold die. An induction heating element is embedded into the first mold die such that the induction heating element defines a portion of the first tool face. The induction heating element includes an electrical conductor, an electrically insulating material disposed about the conductor, and a ferromagnetic material disposed adjacent the electrical conductor and electrically insulating material. | 10-17-2013 |
| 20130280442 | Adhesion Promotion of Vapor Deposited Films - Methods for improving the adhesion of vacuum deposited coatings to a wide variety of substrates are described herein. The methods include utilizing a thermal source to generate free radical species which are then contacted to the substrate to be coated. Chemical vapor deposition, particularly initiated chemical vapor deposition (iCVD) can be used to form polymer thin films in situ without the need to remove the substrate from the chamber or even return to atmospheric pressure. Significant improvements in substrate adhesion of the subsequently deposited films have been observed over a range of substrate and coating materials. | 10-24-2013 |
| 20130316097 | LITHIUM-MANGANESE-TIN OXIDE CATHODE ACTIVE MATERIAL AND LITHIUM SECONDARY CELL USING THE SAME - A cathode thin film for a lithium secondary cell, which uses a cathode active material substituting Sn for Mn in lithium manganese oxide, has a high discharge capacity and an improved cycle property. | 11-28-2013 |
| 20130344258 | OPTICAL METHOD FOR ADDITIVE MANUFACTURING OF COMPLEX METALLIC SHAPES USING A GASEOUS MEDIUM - The present invention is a method for additive manufacturing in which a metal feedstock is converted to a carbonyl compound (or other gaseous media) and then optical heat patterns are used to direct the deposition of the contained metal into an arbitrary 3-D structure. | 12-26-2013 |
| 20140295106 | HIGH THROUGHPUT MULTI-WAFER EPITAXIAL REACTOR - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases. | 10-02-2014 |
| 20150110975 | METHOD FOR FORMING MANGANESE-CONTAINING FILM - A method for forming a manganese-containing film to be formed between an underlayer and a copper film includes reacting a manganese compound gas with a nitrogen-containing reaction gas to form a nitrogen-containing manganese film on the underlayer; and reacting a manganese compound gas with a reducing reaction gas, thermally decomposing a manganese compound gas, or performing a decomposition reaction on a manganese compound gas through irradiation of energy or active species to form a metal manganese film on the nitrogen-containing manganese film. | 04-23-2015 |
| 20150299861 | Device for Synthesising Core-Shell Nanoparticles by Laser Pyrolysis and Associated Method - A device for synthesising core-shell nanoparticles by laser pyrolysis is provided. The device includes a reactor having a first chamber for synthesising the core, which is provided with an inlet for a core precursor; a second chamber for synthesising the shell, which is provided with an inlet for a shell precursor; and at least one communication channel between the two chambers for transmitting the core of the nanoparticles to be formed in the first chamber towards the second chamber. The device also includes an optical device for illuminating each of the two chambers, and at least one laser capable of emitting a laser beam intended to interact with the precursors in order to form the core and the shell. | 10-22-2015 |
| 427587000 | Resistance or induction heating | 18 |
| 20090087588 | EDGE DENSIFICATION FOR FILM BOILING PROCESS - A method and apparatus are disclosed for improving densification of porous substrate using a film boiling process. In particular, the disclosed method and apparatus permit more complete densification of a substrate (i.e., densification closer to the surface of the substrate) by providing a sort of barrier that reduces cooling of the surface of the substrate being densified caused by contact with the relatively cool boiling liquid precursor of the densifying material, such as carbon. In particular, contact between the substrate and the liquid precursor is reduced using one or both of physical barriers (such as a mesh material) or structures that promote the formation of an insulating gaseous layer between the substrate and the liquid precursor (such as a plate closely spaced apart from the surface of the porous substrate). | 04-02-2009 |
| 20100047475 | Coated filaments and their manufacture - A coating is formed by chemical vapour deposition an electrically heated filament which is passed through an end plate into a deposition chamber and leaves the deposition chamber through a similar end plate. The filament slides through an entrance passage into a first electrode chamber, around part of a wheel electrode into the deposition chamber. The passage of the filament around the wheel electrode provides adequate direct electrical contact. The end plate operates in exactly the same manner. As no mercury or a low-melting point eutectic alloy is used, no contaminants associated therewith are produced and the resultant coated filament is free of such contaminants. | 02-25-2010 |
| 20110159214 | GOLD-COATED POLYSILICON REACTOR SYSTEM AND METHOD - A reaction chamber system, and related devices and methods for use in the system, are provided in which reduced power consumption can be achieved by providing a thin layer of gold on one or more components inside a reaction chamber. The reaction chamber system can be used for chemical vapor deposition. The gold coating should be maintained to a thickness of at least about 0.1 microns, and more preferably about 0.5 to 3.0 microns, to provide a suitable emissivity inside the reaction chamber, and thus reduce heat losses. | 06-30-2011 |
| 20110206866 | DEPOSITION APPARATUS AND METHOD - A deposition apparatus | 08-25-2011 |
| 20120100312 | METHODS FOR ENHANCING TANTALUM FILAMENT LIFE IN HOT WIRE CHEMICAL VAPOR DEPOSITION PROCESSES - Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H | 04-26-2012 |
| 20120156396 | CVD REACTOR - The invention relates to a CVD reactor comprising a heatable body ( | 06-21-2012 |
| 20120315405 | HOT WIRE CHEMICAL VAPOR DEPOSTION (HWCVD) WITH CARBIDE FILAMENTS - A hot wire chemical vapor deposition apparatus for use in depositing thin films such as amorphous or epitaxial silicon upon a surface of a wafer or substrate by cracking a source or precursor gas such as silane. The apparatus includes a vacuum chamber and a source of precursor gas operable to inject the precursor gas into the chamber. The HWCVD apparatus also includes a heater with a support surface exposed to the deposition chamber, and the heater is operable to heat a substrate positioned upon the support surface. The apparatus includes a catalytic decomposition assembly with a filament positioned between the heater and the precursor gas inlet for selectively passing a current through the filament to resistively heat material of the filament. The filament material may be carbide such as tantalum carbide, which may be coated on a graphite core. | 12-13-2012 |
| 20140050865 | APPARATUS AND METHOD FOR COATING USING A HOT WIRE - A coating apparatus ( | 02-20-2014 |
| 20150044390 | METHOD OF CLEANING THE FILAMENT AND REACTOR'S INTERIOR IN FACVD - A method of operating a filament assisted chemical vapor deposition (FACVD) system. The method includes depositing a film on a substrate in a reactor of the FACVD system. During the depositing, a DC power is supplied to a heater assembly to thermally decompose a film forming material. The method also includes cleaning the heater assembly, or an interior surface of the reactor, or both. During the cleaning, an alternating current is supplied to the heater assembly to energize a cleaning media into a plasma. | 02-12-2015 |
| 427588000 | Silicon or semiconductor material containing coating | 8 |
| 20100040803 | APPARATUS AND METHODS FOR PREPARATION OF HIGH-PURITY SILICON RODS USING MIXED CORE MEANS - Disclosed are a method and an apparatus for preparing a polycrystalline silicon rod using a mixed core means, comprising: installing a first core means made of a resistive material together with a second core means made of silicon material in an inner space of a deposition reactor; electrically heating the first core means and pre-heating the second core by the first core means which is electrically heated; electrically heating the preheated second core means; and supplying a reaction gas into the inner space in a state where the first core means and the second core means are electrically heated for silicon deposition. | 02-18-2010 |
| 20100221454 | Methods for Preparation of High-Purity Polysilicon Rods Using a Metallic Core Means - The present invention relates to a method for preparing a polysilicon rod using a metallic core means, comprising: installing a core means in an inner space of a deposition reactor used for preparing a silicon rod, wherein the core means (C) is constituted by forming one or a plurality of separation layer(s) on the surface of a metallic core element and is connected to an electrode means (E), heating the core means (C) by supplying electricity through the electrode means (E), and supplying a reaction gas (Gf) into the inner space (Ri) for silicon deposition, thereby forming a deposition output in an outward direction on the surface of the core means (C). According to the present invention, the deposition output (D) and the core means (C) can be separated easily from the silicon rod output obtained by the process of silicon deposition, and the contamination of the deposition output caused by impurities of the metallic core element (Ca) can be minimized, thereby a high-purity silicon can be prepared in a more economic and convenient way. | 09-02-2010 |
| 20100272922 | Process for Improved Chemical Vapor Deposition of Polysilicon - A process for producing silicon rods including providing a reactor vessel containing at least one reaction chamber surrounded by a jacket, wherein a pre-heating fluid is circulated in the jacket; one or more electrode assemblies extending into the reaction chamber wherein each electrode assembly comprises a gas inlet, one or more heat transfer fluid inlets/outlets, at least one pair of silicon filaments, the filaments connected to each other at their upper ends with a silicon bridge to form a filament/slim rod assembly, each filament/slim rod assembly enclosed in an isolation jacket; a source of a silicon-bearing gas connected to the interior of the vessel for supplying the gas into the reaction chamber to produce a reaction and to deposit polycrystalline silicon on the filament by chemical vapor deposition thereby producing a rod of polycrystalline silicon; a heat transfer system that is connected to the jacketed reaction chamber that supplies heat transfer fluid to preheat the reaction chamber; and a power supply wherein the power supply supplies less than about 26,000 volts; wherein the apparatus does not include a heating finger is provided. | 10-28-2010 |
| 20130011581 | PROTECTIVE DEVICE FOR ELECTRODE HOLDERS IN CVD REACTORS - A device for protecting electrode holders in CVD reactors includes an electrode suitable for accommodating a filament rod on an electrode holder which includes an electrically conductive material and is installed in a recess of a bottom plate, wherein an intermediate space between an electrode holder and a bottom plate is sealed by means of a sealing material, and the sealing material is protected by a protective body which is made up of one or more parts and is arranged in a ring-like manner around the electrodes, and the height of the protective body increases at least in sections in the direction of the electrode holder. | 01-10-2013 |
| 20130273265 | APPARATUS AND METHOD FOR SUPPLYING ELECTRIC POWER TO A CVD-REACTOR - An apparatus and method for applying a voltage across silicon rods in a CVD reactor has a series connection wherein the silicon rods may be inserted as resistors. A first power supply unit has first transformers connected with one silicon rod. A second power supply unit has second transformers connected to the same number of silicon rods as the first transformers in parallel to one or more of the first transformers. The second transformers have an open circuit voltage lower than the first transformers and a short circuit current higher than the first transformers. A third power supply unit has outputs connected with the silicon rods in parallel to the first and second transformers. The third power supply unit is capable of providing a current in a voltage range below the open circuit voltage of the second transformer and higher than the short circuit current of the second transformer. | 10-17-2013 |
| 20150017349 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 01-15-2015 |
| 20150037516 | POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD - Switches (S | 02-05-2015 |
| 427589000 | Silicon carbide | 1 |
| 20090061111 | APPARATUS FOR MANUFACTURING GAS BARRIER PLASTIC CONTAINER, METHOD FOR MANUFACTURING THE CONTAINER, AND THE CONTAINER - The object of the present invention is to provide an apparatus for manufacturing a gas barrier plastic container which simultaneously satisfies the condition that the same vacuum chamber can be used even when the container shapes are different, the condition that a high-frequency power source is unnecessary, and the condition that film formation can be carried out for a plurality of containers inside one vacuum chamber in order to make the apparatus low cost. In an apparatus for forming a film on the inner surface of a container, a thermal catalyst is supported on a source gas supply pipe, and the source gas supply pipe is inserted into the port of the container, followed by film formation. In an apparatus for forming a film on the outer surface of a container, a thermal catalyst is arranged on the periphery of the plastic, and a source gas is blown out through the source gas supply pipe while bringing the source gas into contact with the thermal catalyst for film formation. Cooling is carried out to avoid the thermal deformation of the container by heat radiated from the thermal catalyst. For example, a container on which a hydrogen-containing SiN | 03-05-2009 |
| 427590000 | Boron, nitrogen, or inorganic carbon containing coating | 1 |
| 20110064891 | METHODS OF RAPIDLY DENSIFYING COMPLEX-SHAPED, ASYMMETRICAL POROUS STRUCTURES - Methods of densifying a complex-shaped and/or asymmetrical porous structure include providing a porous structure having such shape, connecting at least two regions of the porous structure with an electrically-conductive element to form a continuous electrically-conductive assembly to enable non-contact electromagnetic coupling between the porous structure and an induction coil, establishing a thermal gradient from an inner region of the porous structure to an outer surface region thereof, where the inner region is at a temperature that is initially higher than a temperature of the outer surface region and that causes decomposition of a compound to effect deposition of a solid derived from the decomposition of the compound on and within the inner porous region, exposing the porous structure to the gaseous compound to effect deposition of the solid within the porous structure, and continuing the steps of establishing and exposing until the porous structure has a predetermined mass or density. | 03-17-2011 |
