| Entries |
| Document | Title | Date |
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| 20080268174 | Apparatus and Method for Manufacturing an Optical Preform - The present invention relates to an apparatus and related method for manufacturing an optical preform. The present invention embraces a novel insert tube that is strategically positioned within a quartz substrate tube during the internal vapor deposition process. | 10-30-2008 |
| 20090011149 | SUBSTRATE PROCESSING METHOD - A method of forming a low-K dielectric film, comprises the steps of placing a substrate carrying thereon a low-K dielectric film on a stage, heating the low-K dielectric film on the stage, processing the low-K dielectric film by plasma of a processing gas containing a hydrogen gas, the plasma being excited while supplying the processing gas over the low-K dielectric film, wherein the plasma is excited within 90 seconds after placing the substrate upon the stage. | 01-08-2009 |
| 20090017231 | NOVEL SILICON PRECURSORS TO MAKE ULTRA LOW-K FILMS WITH HIGH MECHANICAL PROPERTIES BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—C | 01-15-2009 |
| 20090081384 | Low Wetting Hysteresis Polysiloxane-Based Material and Method for Depositing Same - A polysiloxane-based material presents a predetermined structure or conformation such that the polysiloxane-based material comprises a ratio between a number of linear —Si—O— bonds and a number of cyclic —Si—O— bonds less than or equal to 0.4, and preferably less than or equal to 0.3. Such a polysiloxane-based material enables a wetting hysteresis less than 10°, and preferably less than 5° to be obtained. Such a low wetting hysteresis material can be achieved by chemical vapor deposition enhanced by a plasma wherein a precursor is injected. The precursor is selected from the group consisting of cyclic organosiloxanes such as octamethylcyclotetrasiloxane and derivatives thereof and cyclic organosilazanes such as octamethylcyclosilazane and derivatives thereof. A ratio between a power density dissipated in the plasma and a precursor flow rate injected in the plasma is less than or equal to 100 W.cm | 03-26-2009 |
| 20090104376 | GAS DIFFUSION SHOWER HEAD DESIGN FOR LARGE AREA PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION - Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. At least one of the gas passages has a right cylindrical shape for a portion of its length extending from the upstream side and a coaxial conical shape for the remainder length of the diffuser plate, the upstream end of the conical portion having substantially the same diameter as the right cylindrical portion and the downstream end of the conical portion having a larger diameter. The gas distribution plate is relatively easy to manufacture and provides good chamber cleaning rate, good thin film deposition uniformity and good thin film deposition rate. The gas distribution plate also has the advantage of reduced chamber cleaning residues on the diffuser surface and reduced incorporation of the cleaning residues in the thin film being deposited. | 04-23-2009 |
| 20090148627 | DEUTEROXYL-DOPED SILICA GLASS, OPTICAL MEMBER AND LITHOGRAPHIC SYSTEM COMPRISING SAME AND METHOD OF MAKING SAME - What is disclosed includes OD-doped synthetic silica glass capable of being used in optical elements for use in lithography below about 300 nm. OD-doped synthetic silica glass was found to have significantly lower polarization-induced birefringence value than non-OD-doped silica glass with comparable concentration of OH. Also disclosed are processes for making OD-doped synthetic silica glasses, optical member comprising such glasses, and lithographic systems comprising such optical member. The glass is particularly suitable for immersion lithographic systems due to the exceptionally low polarization-induced birefringence values at about 193 nm. | 06-11-2009 |
| 20090233007 | Chemical vapor deposition reactor and method - The photovoltaic structure comprises a thin film coating on a transparent substrate, the thin film comprising an effective amount of nanocrystalline silicon embedded in a matrix of amorphous and/or microcrystalline silicon. A transparent conducting oxide layer on a layer of non-conductive transparent oxide provides light-trapping capability as well as electrical conductivity where needed. A chemical vapor deposition (“CVD”) reactor provides improved gas distribution to the substrates being coated in the reactor. An improved sputtering process and an improved RF plasma-enhanced CVD manufacturing method both using high levels of hydrogen in the hydrogen-silane mixture and high electrical power levels for the plasma to increase the speed and to lower the cost of manufacturing. | 09-17-2009 |
| 20090280268 | Method and apparatus for application of thin coatings from plasma onto inner surfaces of hollow containers - A method and an apparatus are proposed for simultaneously coating the inner walls of a plurality of hollow containers, such as bottles, with fluid-impermeable barrier layers applied by a PECVD method with the use of transversal antennas capable of creating plasma having density increased in the vicinity of the inner walls of the containers. The barrier-layer application period is divided into a coating period and a noncoating cooling period, with RF energy constantly maintained under working conditions with shunting thereof from the coating station to the dummy loads during noncoating periods used for cooling the plastic containers. The apparatus comprises a vacuum chamber with a conveyor that transports the containers in a preoriented state for interaction with a plurality of aligning elements that can be inserted into the container openings for subsequent fixation at equal distances in positions aligned with the antennas that can be inserted into the containers for generation of the coating-applying plasma. | 11-12-2009 |
| 20090324850 | EDGE HEALING AND FIELD REPAIR OF PLASMA COATING - Described are processes for repairing plastic glazing and for the local application of a plasma coating using a plasma depositing device to an edge created by the removal of excess or unwanted plastic from plastic. | 12-31-2009 |
| 20100098885 | PLASMA SILANIZATION SUPPORT METHOD AND SYSTEM - A plasma silanization system includes a processing vessel having a metal shelf and a non-metallic component support configured to elevate a component above the metal shelf to prevent excess silane deposition. A method of applying silane to a component in a plasma processing apparatus having a metal shelf includes placing a non-metallic component support on the metal shelf and placing a component on the non-metallic component support to prevent excess silane deposition. | 04-22-2010 |
| 20100119733 | METHOD OF IMMOBILIZING ACTIVE MATERIAL ON SURFACE OF SUBSTRATE - Provided is a method of immobilizing an active material on a surface of a substrate. The method including cleaning a substrate, functionalizing a surface of the substrate using a hydroxyl group, functionalizing the surface of the substrate at atmospheric pressure using a vaporized organic silane compound, and immobilizing an active material to an end of the surface of the substrate. Therefore, since evacuation or the use of carrier gas is not necessary, a uniform, high-density, single-molecular, silane compound film can be formed inexpensively, simply, and reproducibly, and an active material can be immobilized to the single-molecular silane compound film. | 05-13-2010 |
| 20100151151 | METHOD OF FORMING LOW-K FILM HAVING CHEMICAL RESISTANCE - A method of forming a low-k film containing silicon and carbon on a substrate by plasma CVD, includes: supplying gas of a precursor having a Si—R—O—R—Si bond into a reaction space in which a substrate is placed; and exciting the gas in the reaction space, thereby depositing a film on the substrate. | 06-17-2010 |
| 20100189926 | PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING HIGH PURITY SILICON - A plasma deposition apparatus for making high purity silicon, including a chamber for depositing said high purity silicon, the chamber including a top defining substantially an upper end of the chamber; one or more sides having an upper end and a lower end, the top substantially sealingly joining the upper end of the one or more sides; a base defining substantially a lower end of the chamber, the base substantially sealingly joining the lower end of the one or more sides; and at least one induction coupled plasma torch disposed in the top, the at least one induction coupled plasma torch oriented in a substantially vertical position producing a plasma flame downward from the top towards the base, the plasma flame defining a reaction zone for reacting one or more reactants to produce the high purity. | 07-29-2010 |
| 20100233385 | APPARATUS AND METHOD OF FORMING THIN LAYERS ON SUBSTRATE SURFACES - The invention relates to an apparatus and to a method of forming thin films on substrate surfaces. It is the object of the invention to provide possibilities with which thin layers can be manufactured on substrate surfaces which have a specific layer material formation with desired properties. The apparatus in accordance with the invention is made such that a feed is present for at least one gaseous precursor, which contributes to the layer formation, at a reaction chamber region above a substrate surface to be coated. A source which is a plasma source and which emits electromagnetic radiation is moreover arranged such that a photolytic activation of atoms and/or molecules of the precursor(s) takes place with the emitted electromagnetic radiation. In this respect, the plasma source should be arranged and should also be operated such that no direct influence of the plasma on the substrate surface and on the precursors resulting in the layer formation takes place. | 09-16-2010 |
| 20100239783 | METHODS OF FORMING MOLDS AND METHODS OF FORMING ARTICLES USING SAID MOLDS - A method of forming a working mold including placing a substrate near an electrode in a chamber, the substrate ( | 09-23-2010 |
| 20100247806 | METHOD OF PRODUCING GAS BARRIER LAYER - The producing method of a gas barrier layer uses a material having at least one Si—H bond, a material having at least one N-H bond, and at least one of nitrogen gas, hydrogen gas and a noble gas and forms the gas barrier layer by plasma-enhanced CVD using a plasma in which an emission intensity A of emission at 414 nm, an emission intensity B of emission at 336 nm, an emission intensity C of emission at 337 nm, and an emission intensity D of emission at 656 nm satisfy formulas a to c: | 09-30-2010 |
| 20100330301 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE - A substrate processing apparatus includes a chamber defining a process space where a process is carried out with respect to a substrate, a first supply member located above the process space for supplying a first source gas toward the process space, a plasma source configured to generate an electric field in the process space to create radicals from the first source gas, and a second supply member configured to supply a second source gas above the substrate. The chamber includes a lower chamber in which a support member configured to allow the substrate to be placed thereon is installed. The lower chamber is open at a top thereof. The second supply member is installed at an upper end of the lower chamber for supplying the second source gas in a direction generally parallel to the substrate placed on the support member. The second source gas may be a silicon-containing gas. | 12-30-2010 |
| 20110091662 | COATING METHOD AND DEVICE USING A PLASMA-ENHANCED CHEMICAL REACTION - The invention relates to a method and a device for the plasma-enhanced deposition of a layer on a substrate ( | 04-21-2011 |
| 20110129617 | Plasma system and method of producing a functional coating - A plasma system has at least one inductively coupled high-frequency plasma jet source having a burner body delimiting a plasma generating space having an outlet orifice for the plasma jet, a coil surrounding the plasma generating space in some areas, an inlet for supplying a gas and/or a precursor material into the plasma generating space and a high-frequency generator which is connected to the coil for igniting the plasma and for injecting an electric power into the plasma. The plasma jet source has an electric component using which the intensity of the plasma jet is variable periodically over time. In addition, a method of producing the functional coating on a substrate by using this plasma system is described. | 06-02-2011 |
| 20110135844 | LARGE AREA PLASMA PROCESSING CHAMBER WITH AT-ELECTRODE RF MATCHING - A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode. | 06-09-2011 |
| 20110151141 | CHEMICAL VAPOR DEPOSITION FOR AN INTERIOR OF A HOLLOW ARTICLE WITH HIGH ASPECT RATIO - A method and apparatus for plasma enhanced chemical vapor deposition to an interior region of a hollow, tubular, high aspect ratio workpiece are disclosed. A plurality of anodes are disposed in axially spaced apart arrangement, to the interior of the workpiece. A process gas is introduced into the region. A respective individualized DC or pulsed DC bias is applied to each of the anodes. The bias excites the process gas into a plasma. The workpiece is biased in a hollow cathode arrangement. Pressure is controlled in the interior region to maintain the plasma. An elongated support tube arranges the anodes, and receives a process gas tube. A current splitter provides a respective selected proportion of a total current to each anode. One or more notch diffusers or chamber diffusers may diffuse the process gas or a plasma moderating gas. Plasma impedance and distribution may be controlled using various means. | 06-23-2011 |
| 20110217485 | METHOD FOR COATING A METAL CRUCIBLE ELEMENT WITH A MIXTURE OF GLASS AND CERAMIC - Angular sectors of a cylindrical wall of a crucible for vitrification of waste, built in steel and subject to high temperatures, are coated with a mixture of mainly glass and ceramic, the coating being subject to a heat treatment comprising a step between 650° C. and 850° C. so as to perform surface melting of the mixture filling the open porosity, improving dielectric strength and the cohesion of the coating, but without producing any excessive thermal expansion or oxidation of the substrate which would lead to fast flaking of the coating. | 09-08-2011 |
| 20120156393 | Deposition of Hydrogenated Thin Film - A hydrogenated thin film is formed in a controlled vacuum on a substrate by evaporating one or more solid materials and passing the resulting vapor and a hydrogen-containing gas into a space between two electrodes. One of the electrodes includes openings for allowing the vapor to enter the space. Plasma is generated within the space to cause dissociation of the hydrogen-containing gas and promote a reaction between the material(s) and hydrogen-containing gas. | 06-21-2012 |
| 20120219728 | METHODS OF SURFACE TREATING POROUS PARTICLES - A method of treating porous particles, each porous particle having an external surface and a multiplicity of pores with interior pore surfaces, by contacting the external surface with a hydrophobic agent while causing the interior pore surfaces to remain substantially free of the hydrophobic agent. In certain illustrative embodiments, treating the external surfaces of the porous particles includes exposing the porous particles to at least one of water vapor, methanol vapor, or ethanol vapor; and subsequently exposing the porous particles to a second vapor comprising a reactive organosilane compound which reacts to form the hydrophobic agent. In some particular illustrative embodiments, at least a portion of the external surface of the treated porous particle includes hydrophobic groups, the hydrophobic groups selected from at least one of alkyl or aryl groups optionally substituted with fluorine, and siloxanes having alkyl groups, aryl groups, or combinations thereof. | 08-30-2012 |
| 20130059093 | METHOD OF PRODUCING COATED MEMBER - The coated member production method includes a DLC film forming step of introducing a feedstock gas containing a carbon compound and an oxygen-containing organic silicon compound into a treatment chamber in which a base is accommodated, and applying a voltage to the base at a treatment pressure of not lower than 100 Pa and not higher than 400 Pa to generate plasma to form a DLC film on a surface of the base. Hexamethyldisiloxane, for example, is used as the oxygen-containing organic silicon compound. A DC pulse voltage, for example, is applied to the base in the DLC film forming step. | 03-07-2013 |
| 20130095256 | IMPACT AND EROSION RESISTANT THERMAL AND ENVIRONMENTAL BARRIER COATINGS - The present invention provides a process for the application of high temperature coating that provide enhanced impact resistance and erosion damage for the coatings. For high temperature coating systems that provide environmental protection to silicon based ceramics, the process provides the deposition of a silicon-based bond coat on the substrate using the directed vapor deposition with plasma activation and at least one supersonic gas jet nozzle. The process provides the deposition of an EBC layer using the directed vapor deposition with the gas jet nozzle. In one embodiment, the thermal barrier layer may also contain one or more dense embedded layers which further promote impact resistance. Within the process, the particular layers, silicon bond coat, EBC layer and/or TBC layer may be deposited together or specific novel layers applied in combination with other layers deposited using prior known deposition techniques. | 04-18-2013 |
| 20130129940 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME - Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film. | 05-23-2013 |
| 20130196081 | CRYSTALLINE FILM DEVICES, APPARATUSES FOR AND METHODS OF FABRICATION - Methods of depositing thin film materials having crystalline content are provided. The methods use plasma enhanced chemical vapor deposition. According to one embodiment of the present invention, microcrystalline silicon films are obtained. According to a second embodiment of the present invention, crystalline films of zinc oxide are obtained. According to a third embodiment of the present invention, crystalline films of iron oxide are obtained. | 08-01-2013 |
| 20130196082 | ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF - Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: | 08-01-2013 |
| 20130224399 | METHOD OF FORMING NITROGEN-FREE DIELECTRIC ANTI-REFLECTION LAYER - The present invention provides a method of forming a nitrogen-free dielectric anti-reflection layer comprising: introducing a reaction gas into the discharge tube until the reaction gas reaching a stable state; introducing the reaction gas into the reaction chamber and then generating a plasma, or generating a plasma and then introducing the reaction gas into the reaction chamber, wherein the time delay occurs between the two processes is utilized to perform the deposition of the nitrogen-free dielectric anti-reflection layer; finally stop introducing the reaction gas and then stop generating the plasma. The method can flexibly control the extinction coefficient and the refractive index of the nitrogen-free dielectric anti-reflection layer so as to obtain a straight photoresist pattern and greatly reduce the photoresist standing waves effect and photoresist poisoning effect. | 08-29-2013 |
| 20140030448 | NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME - Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH | 01-30-2014 |
| 20160017495 | PLASMA-ENHANCED AND RADICAL-BASED CVD OF POROUS CARBON-DOPED OXIDE FILMS ASSISTED BY RADICAL CURING - Embodiments disclosed herein generally include methods for forming porous low k dielectric films. In one embodiment, a method of forming a porous low k dielectric film on a substrate using PECVD and in situ radical curing in a processing chamber is disclosed. The method includes introducing radicals into a processing region of the processing chamber, introducing a gas mixture into the processing region of the processing chamber, forming a plasma in the processing region and depositing the porous low k dielectric film on the substrate. | 01-21-2016 |
| 20160083847 | ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF - Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: | 03-24-2016 |
