| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427575000 | Generated by microwave (i.e., 1mm to 1m) | 58 |
| 20080206484 | Graphitized Carbon Coatings for Composite Electrodes - A method for forming a graphitic carbon film at low temperatures is described. The method involves using microwave radiation to produce a neutral gas plasma in a reactor cell. At least one carbon precursor material in the reactor cell forms a graphitic carbon film on a substrate in the cell under influence of the plasma. This method can be used to coat active electrode material powders with highly conductive carbon, which can be especially useful in forming composite electrodes. When an organometallic is used as the precursor, this method can also be used to form carbon/metal catalyst films. | 08-28-2008 |
| 20080226840 | Process for synthesizing uniform nanocrystalline films - A CVD process for producing nanocrystalline films using a plasma ( | 09-18-2008 |
| 20080274300 | APPARATUS FOR CARRYING OUT PLASMA CHEMICAL VAPOUR DEPOSITION AND METHOD OF MANUFACTURING AN OPTICAL PREFORM - The present invention relates to an apparatus for carrying out plasma chemical vapour deposition, by which one or more layers of doped or undoped silica are deposited onto the interior of an elongated hollow glass substrate tube. The present invention further relates to a method of manufacturing an optical preform by means of plasma chemical vapour deposition, wherein doped or undoped glass-forming gases are passed through the interior of an elongated glass substrate tube while conditions for depositing glass layers are created in the interior of the substrate tube. | 11-06-2008 |
| 20080286495 | SYSTEM AND METHOD FOR POWER FUNCTION RAMPING OF SPLIT ANTENNA PECVD DISCHARGE SOURCES - A system and method for depositing films on a substrate is described. One embodiment includes a vacuum chamber; a split conductor housed inside the vacuum chamber; a magnetron configured to generate a power signal that can be applied to at least a portion of the split conductor; a power supply configured to provide a power signal to the magnetron, the power signal including a plurality of pulses; and a pulse control connected to the power supply, the pulse control configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and the contour shape of the plurality of pulses. | 11-20-2008 |
| 20080317975 | Cleaning Method and Plasma Processing Method - In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H | 12-25-2008 |
| 20090011146 | Method of Forming Vapor Deposited Layer by Surface-Wave Plasma and Apparatus Therefor - A vapor deposition film formation method includes a step for arranging a surface wave generating device ( | 01-08-2009 |
| 20090022906 | Apparatus and Method for Performing a PCVD Process - The present invention relates to an apparatus for carrying out a PCVD process in which one or more doped or undoped glass layers are coated onto the interior of a glass substrate tube. The apparatus comprises an applicator having an inner wall and an outer wall and a microwave guide that opens into the applicator. The applicator extends around a cylindrical axis and which is provided with a passage adjacent to the inner wall, through which the microwaves supplied via the microwave guide can exit, over which cylindrical axis the substrate tube can be positioned, while the applicator is fully surrounded by a furnace that extends over the cylindrical axis. | 01-22-2009 |
| 20090047447 | Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor - The present invention relates to plasma cleaning methods for removing surface deposits from a surface, such as the interior of a depositions chamber that is used in fabricating electronic devices. The present invention also provides gas mixtures and activated gas mixtures which provide superior performance in removing deposits from a surface. The methods involve activating a gas mixture comprising a carbon or sulfur source, NF | 02-19-2009 |
| 20090053428 | PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY - A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects. The apparatus has a control for the entire manufacturing process that includes a diagnostic element and a feedback control element to permit process programming to achieve and maintain the optimal distribution of one or more preferred species throughout the deposition process. | 02-26-2009 |
| 20090123663 | High velocity method for depositing diamond films from a gaseous phase in SHF discharge plasma and a plasma reactor for carrying out said method - The invention relates to carbon deposition by decomposing gaseous compounds with the aid of the SHF discharge plasma and can be used, for example, for producing polycrystalline diamond films (plates), which are used for producing output windows of power SHF sources, for example gyrotrons. Said invention ensures a high speed deposition of the high quality diamond films (having a loss-tangent angle □ equal to or less than 3×10 | 05-14-2009 |
| 20090130337 | PROGRAMMED HIGH SPEED DEPOSITION OF AMORPHOUS, NANOCRYSTALLINE, MICROCRYSTALLINE, OR POLYCRYSTALLINE MATERIALS HAVING LOW INTRINSIC DEFECT DENSITY - A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects. The apparatus has a control for the entire manufacturing process that includes a diagnostic element and a feedback control element to permit process programming to achieve and maintain the optimal distribution of one or more preferred species throughout the deposition process. | 05-21-2009 |
| 20090238998 | COAXIAL MICROWAVE ASSISTED DEPOSITION AND ETCH SYSTEMS - Disclosed are systems for achieving improved film properties by introducing additional processing parameters, such as a movable position for the microwave source and pulsing power to the microwave source, and extending the operational ranges and processing windows with the assistance of the microwave source. A coaxial microwave antenna is used for radiating microwaves to assist in physical vapor deposition (PVD) or chemical vapor deposition (CVD) systems. The system may use a coaxial microwave antenna inside a processing chamber, with the antenna being movable between a substrate and a plasma source, such as a sputtering target, a planar capacitively generated plasma source, or an inductively coupled source. In a special case when only a microwave plasma source is present, the position of the microwave antenna is movable relative to a substrate. The coaxial microwave antenna adjacent to the plasma source can assist the ionization more homogeneously and allow substantially uniform deposition over large areas. | 09-24-2009 |
| 20090286011 | Plasma Processing Device, Plasma Processing Method, and Plasma Surface Processing Method - To generate plasma inside a tube of a small opening diameter and perform plasma processing inside the tube. | 11-19-2009 |
| 20090304950 | Method for Cold Plasma Treatment of Plastic Bottles and Device for Implementing Same - The present invention relates to a method for treating plastic bottles comprising an operation for cold plasma sterilization with non-germicidal gasses and/or an operation for the cold plasma deposition of a diffusion barrier layer, said method being characterized in that said cold plasma delivers adjustable nonthermal energy to the entire inside surface of the bottle, said cold plasma being generated either through a distributed propagation of microwaves having a maximum intensity in the vicinity of said surface or by a hollow cathode system adapted to the bottle and supplied with pulsed DC and/or RF voltage. The invention also relates to the devices for implementing the method. | 12-10-2009 |
| 20090317566 | MICROWAVE PLASMA PROCESSING APPARATUS AND METHOD OF SUPPLYING MICROWAVES USING THE APPARATUS - A microwave plasma processing apparatus performs plasma processing on a substrate by exciting a gas by electric field energy of microwaves emitted from a radial line slot antenna (RLSA). The microwave plasma processing apparatus includes: a processing container in which plasma processing is performed; a microwave source outputting microwaves; a rectangular waveguide transmitting the microwaves outputted from the microwave source; a coaxial converter converting a mode of the microwaves transmitted to the rectangular waveguide; an inner conductor of a coaxial waveguide connected to the coaxial converter to be slidable; a first contact member joined with the coaxial converter and electrically connecting the coaxial converter and the inner conductor; and a first spring member absorbing displacement, due to thermal expansion, of the RLSA and a member disposed above the RLSA. | 12-24-2009 |
| 20100034984 | Microwave plasma reactors - New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity. | 02-11-2010 |
| 20100047473 | METHOD OF FORMING A FILM BY DEPOSITION FROM A PLASMA - A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse. | 02-25-2010 |
| 20100068415 | DEPOSITION OF AMORPHOUS SILICON FILMS BY ELECTRON CYCLOTRON RESONANCE - A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range −30 to −105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder. | 03-18-2010 |
| 20100075066 | PLASMA FILM FORMING APPARATUS AND PLASMA FILM FORMING METHOD - A plasma film forming apparatus includes: a processing chamber; a mounting table for mounting thereon a target object; a ceiling plate which is installed at a ceiling portion and is made of a dielectric material; a gas introduction mechanism for introducing a processing gas including a film formation source gas and a supporting gas; and a microwave introduction mechanism which is installed at a ceiling plate's side and has a planar antenna member. The gas introduction mechanism includes: a central gas injection hole for the source gas, located above a central portion of the target object; and a plurality of peripheral gas injection holes for the source gas, arranged above a peripheral portion of the target object along a circumferential direction thereof. A plasma shielding member is installed above the target object and between the central gas injection hole and the peripheral gas injection holes along the circumferential direction thereof. | 03-25-2010 |
| 20100183826 | Method and device for depositing a non-metallic coating by means of cold-gas spraying - A description is given of a method for depositing a non-metallic, in particular ceramic, coating on a substrate ( | 07-22-2010 |
| 20100183827 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus capable of reducing the use amount of a dielectric member is provided. The plasma processing apparatus | 07-22-2010 |
| 20100189924 | APPARATUS AND METHOD FOR DIAMOND FILM GROWTH - An apparatus and methods for forming a diamond film, are provided. An example of an apparatus for forming a diamond film includes an electrodeless microwave plasma reactor having a microwave plasma chamber configured to contain a substrate and to contain a reactant gas excited by microwaves to generate a microwave plasma discharge. Gas injection ports extend through an outer wall of the plasma chamber at a location upstream of the plasma discharge and above the substrate. Gas jet injection nozzles interface with the gas injection ports and are configured to form a directed gas stream of reactant gas having sufficient kinetic energy to disturb a boundary layer above an operational surface of the substrate to establish a convective transfer of the film material to the operational surface of the substrate. | 07-29-2010 |
| 20100189925 | INSULATOR COATING AND METHOD FOR FORMING SAME - Methods of applying Lotus Effect materials as a (superhydrophobicity) protective coating for external electrical insulation system applications, as well as the method of fabricating/preparing Lotus Effect coatings are discussed. Selected inorganic or polymeric materials are applied on the insulating material surface, and stable superhydrophobic coatings can be fabricated. Various UV stabilizers and UV absorbers can be incorporated into the coating system to enhance the coating's UV stability. Other aspects, features, and embodiments are also discussed and claimed. | 07-29-2010 |
| 20100239782 | INSULATING FILM FORMING METHOD, INSULATING FILM FORMING APPARATUS, AND PLASMA FILM FORMING APPARATUS - An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel. | 09-23-2010 |
| 20100247805 | METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM - An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film. | 09-30-2010 |
| 20100291319 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for plasma-processing a target substrate is provided. The plasma processing apparatus includes a metallic processing container forming a processing space in which a plasma process is performed, and a substrate mounting table provided in the processing space to mount a target substrate thereon, a quartz member which shields a sidewall of the metallic processing container from the processing space and whose lower end extends to a position lower than a substrate mounting surface of the substrate mounting table, an annular member which is made of quartz and is provided between a bottom surface of the quartz member and a bottom wall of the metallic processing container to shield the bottom wall of the metallic processing container from the processing space, and a processing gas inlet part for introducing a processing gas into the processing space from a vicinity of an outer periphery of the substrate mounting table. | 11-18-2010 |
| 20100323126 | Apparatus and Method for Plasma-Assisted Coating and Surface Treatment of Voluminous Parts - Disclosed are an apparatus and a method for plasma-supported coating and surface treatment of voluminous parts. The apparatus features a vacuum chamber ( | 12-23-2010 |
| 20100330300 | SYSTEM AND METHOD FOR PRE-IONIZATION OF SURFACE WAVE LAUNCHED PLASMA DISCHARGE SOURCES - A system and method for treating a surface of a substrate is described. One embodiment includes a method for depositing a film on a substrate, the method comprising generating a first plurality of power pulses, each of the first plurality of power pulses having a first pulse amplitude, providing the first plurality of power pulses to a first discharge tube, generating a plasma about the first discharge tube using the first plurality of power pulses, sustaining the plasma between each of the first plurality of power pulses such that the plasma is not reignited during each of the first plurality of power pulses, disassociating a feedstock gas using the plasma, and depositing at least a portion of the disassociated feedstock gas onto a substrate. | 12-30-2010 |
| 20110076422 | CURVED MICROWAVE PLASMA LINE SOURCE FOR COATING OF THREE-DIMENSIONAL SUBSTRATES - Deposition system and methods for dynamic and static coatings are provided. A deposition system for dynamic coating includes a processing chamber, a non-linear coaxial microwave source, and a substrate support member disposed inside the processing chamber for holding a non-planar substrate. The substrate has a first contour along a first direction and a second contour along a second direction orthogonal to the first direction. The deposition system further includes a carrier gas line for providing a flow of sputtering agents inside the processing chamber and a feedstock gas line for providing a flow of precursor gases. The deposition system for static coating includes a substrate support member disposed inside the processing chamber for holding a non-planar substrate and an array of curved coaxial microwave sources within the processing chamber. The curved coaxial microwave sources are spaced along the second direction to cover the substrate. | 03-31-2011 |
| 20110097517 | DYNAMIC VERTICAL MICROWAVE DEPOSITION OF DIELECTRIC LAYERS - Systems and methods for depositing protection and dielectric layers using a vertical microwave deposition processes are provided. In some embodiments, a microwave antenna is vertically attached to a sidewall of a processing chamber. A substrate can be introduced of placed within the processing chamber in a substantially vertical configuration or in a configuration where the substrate is parallel to a sidewall of the processing chamber. A plasma can be formed with the microwave antenna and various precursor materials, such as precursors that include magnesium or silicon. A processing chamber with multiple sub-chambers is also provided according to some embodiments of the invention. Various sub-chambers can have vertical microwave plasma line sources. Other sub-chambers can providing heating and other processes. At least one substrate supporting member can be used to move the substrate vertically from one sub-chamber to another. | 04-28-2011 |
| 20110097518 | VERTICALLY INTEGRATED PROCESSING CHAMBER - A method and apparatus for plasma processing of substrates in a substantially vertical orientation is described. Substrates are positioned on a carrier comprising at least two frames oriented substantially vertically. The carrier is disposed in a plasma chamber with an antenna structure positioned between the substrates. Multiple plasma chambers may be coupled to a transfer chamber with a turntable for directing the carrier to a target chamber. A loader moves substrates between the carrier and a load-lock chamber in which substrates are staged in a substantially horizontal position. | 04-28-2011 |
| 20120027955 | REACTOR AND METHOD FOR PRODUCTION OF NANOSTRUCTURES - A reactor and method for production of nanostructures produces, for example, metal oxide nanowires or nanoparticles. The reactor includes a metal powder delivery system wherein the metal powder delivery system includes a funnel in communication with a dielectric tube; a plasma-forming gas inlet, whereby a plasma-forming gas is delivered substantially longitudinally into the dielectric tube; a sheath gas inlet, whereby a sheath gas is delivered into the dielectric tube; and a microwave energy generator coupled to the dielectric tube, whereby microwave energy is delivered into a plasma-forming gas. The method for producing nanostructures includes delivering a plasma-forming gas substantially longitudinally into a dielectric tube; delivering a sheath gas into the tube; forming a plasma from the plasma-forming gas by applying microwave energy to the plasma-forming gas; delivering a metal powder into the dielectric tube; and reacting the metal powder within the plasma to form metal oxide nanostructures. | 02-02-2012 |
| 20120064260 | SURFACE WAVE PLASMA CVD APPARATUS AND FILM FORMING METHOD - A surface wave plasma CVD apparatus includes a waveguide connected to a microwave source with slot antennae; a dielectric member that introduces microwaves from slot antennae into a plasma processing chamber to generate surface wave plasma; a moving device that reciprocatory moves a subject of film formation such that the subject passes a film formation processing region facing the dielectric member; a control device that controls the reciprocatory movement of the subject of film formation by the moving device depending on film forming conditions to perform film formation on the subject; and gas ejection parts provided in parallel in a direction at right angles to a direction along which the subject is moved at predetermined positions between the subject that passes through the film formation processing region and the dielectric member. Each of the gas ejection parts has a slit extending parallel to the dielectric member. | 03-15-2012 |
| 20120094034 | COMBINATORIAL PLASMA ENHANCED DEPOSITION TECHNIQUES - Combinatorial plasma enhanced deposition techniques are described, including designating multiple regions of a substrate, providing a precursor to at least a first region of the multiple regions, and providing a plasma to the first region to deposit a first material on the first region formed using the first precursor, wherein the first material is different from a second material formed on a second region of the substrate. | 04-19-2012 |
| 20120148761 | INTEGRATED MICROWAVE WAVE GUIDE WITH IMPEDANCE TRANSITION - A microwave waveguide, and a system and method related to a microwave waveguide, is described. One embodiment includes an integrated microwave waveguide comprising a waveguide block, a first waveguide section in the waveguide block, a second waveguide section in the waveguide block, a first impedance transition section integrated with the first waveguide section in the waveguide block, wherein the first impedance section comprises a first conduit with a first end and a second end, wherein the first conduit is tapered from the first end to the second end, and a second impedance transition section integrated with the second waveguide section in the waveguide block, wherein the second impedance section comprises a second conduit with a third end and a fourth end, wherein the second conduit is tapered from the third end to the fourth end, and wherein the second end of the first impedance transition section and the fourth end of the second impedance transition section are connected. | 06-14-2012 |
| 20120148762 | NANOCOMPOSITES CONTAINING NANODIAMOND - The present disclosure relates to a method of coating a substrate, with the method comprising: providing a substrate; dispersing nanodiamond powder in a liquid to provide a coating precursor; converting the liquid of the coating precursor to a vapor; introducing the coating precursor to a vapor deposition process; and operating the vapor deposition process to produce a nanocrystalline diamond-containing nanocomposite coating on the substrate, the nanocomposite coating produced using the coating precursor and comprising the nanodiamond particles. | 06-14-2012 |
| 20120148763 | SURFACE WAVE PLASMA CVD APPARATUS AND LAYER FORMATION METHOD - A surface wave plasma CVD apparatus, includes: a waveguide ( | 06-14-2012 |
| 20120156392 | ORIENTED CARBON NANOTUBE MANUFACTURING METHOD - Disclosed is a method capable of accelerating the growth of oriented carbon nanotubes when manufacturing the oriented carbon nanotubes by a plasma CVD. Under the circulation of a gas which is the raw material of the carbon nanotubes, plasma is generated by an antenna ( | 06-21-2012 |
| 20120171391 | THIN FILM DEPOSITION USING MICROWAVE PLASMA - Embodiments of the present invention generally provide deposition processes for a silicon-containing dielectric layer using an improved microwave-assisted CVD chamber. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power of about 500 milliWatts/cm | 07-05-2012 |
| 20120213948 | LOCALIZED MICROWAVE SYSTEM AND METHOD - A system for repairing a crack in a component, or forming a joint between two components, is described. The system includes a filler material; a plasma-generating material; and a ceramic cover that is positioned around the crack, or around an interface region between two components that are to be joined. The filler material is positioned proximate to the crack or the interface region; and the plasma generating material is positioned in the vicinity of the crack or the interface region. A microwave generator for generating a microwave field inside an enclosure region enclosed by the cover, and proximate to the crack or interface region, also forms part of the system. Related methods for filling at least one cavity in a casting component are also described. | 08-23-2012 |
| 20120251737 | PLASMA-NITRIDING METHOD - A plasma-nitriding method for plasma-nitriding a silicon nitride film includes loading a target object into a processing chamber and mounting the target object on a mounting table; heating the target object; supplying a processing gas containing a nitrogen-containing gas and a rare gas into the processing chamber while introducing a microwave into the processing chamber, generating an electric field in the processing chamber, and generating a plasma by exciting the processing gas; and plasma-nitriding and modifying a silicon nitride film formed on the target object by the generated plasma. The silicon nitride film is a silicon nitride film formed at a film forming temperature ranging from 200° C. to 400° C. by an ALD method, and the silicon nitride film is plasma-nitrided at a processing temperature whose maximum is equal to the film forming temperature in the ALD method to form a silicon nitride film modified by a low-temperature nitrogen-containing plasma. | 10-04-2012 |
| 20130022760 | PLASMA NITRIDING METHOD - A plasma nitriding method includes performing a high nitrogen-dose plasma nitriding process on an object having an oxide film by introducing a processing gas containing a nitrogen gas into a processing chamber of a plasma processing apparatus and generating a plasma containing a high nitrogen dose; and performing a low nitrogen-dose plasma nitriding process on the object by generating a plasma containing a low nitrogen dose. After the performing the high nitrogen-dose plasma nitriding process is completed, a plasma seasoning process is performed in the chamber by generating a nitrogen plasma containing a trace amount of oxygen by introducing a rare gas, a nitrogen gas and an oxygen gas into the chamber and setting a pressure in the chamber in a range from about 532 Pa to 833 Pa and a volume flow rate ratio of the oxygen gas in all the gases in a range from about 1.5% to 5%. | 01-24-2013 |
| 20130052370 | METHOD FOR DEPOSITING A CATALYTIC LAYER FOR A FUEL CELL - The present invention relates to a method for manufacturing a fuel cell electrode (E) by depositing a catalytic layer ( | 02-28-2013 |
| 20130142964 | DEVICE FOR APPLYING ELECTROMAGNETIC MICROWAVE RADIATION IN A PLASMA INSIDE A HOLLOW GLASS SUBSTRATE TUBE, AND METHOD FOR MANUFACTURING AN OPTICAL PREFORM - A device for applying electromagnetic microwave radiation in a plasma inside a substrate tube including inner and outer cylindrical walls defining an annular cavity therebetween, the inner wall having a circumferential applicator slit, an elongate microwave guide arranged with a first end in communication with the annular cavity and a second end in communication with a microwave generating means for supplying microwaves to the annular cavity, and means for supplying a cooling gas through the elongate microwave guide to a position near the applicator slit. | 06-06-2013 |
| 20130202814 | METHOD AND DEVICE FOR PLASMA-TREATING WORKPIECES - The method and the device are used to plasma-treat workpieces. The workpiece is inserted into a chamber of a treatment station that can be at least partially evacuated. The plasma chamber is bounded by a chamber bottom, a chamber cover, and a lateral chamber wall. A coating is deposited on the workpiece by means of the plasma treatment. The plasma is ignited by pulsed microwave energy. Switch-on phases and switch-off phases of a microwave input are specified by a controller. The relation between the duration of the switch-on phases and the duration of the switch-off phases is changed during the execution of the treatment process for a workpiece | 08-08-2013 |
| 20130287969 | METHOD FOR DEPOSITING A TRANSPARENT BARRIER LAYER SYSTEM - The invention relates to a method for producing a transparent barrier layer system, wherein in a vacuum chamber at least two transparent barrier layers and a transparent intermediate layer disposed between the two barrier layers are deposited on a transparent plastic film, wherein for deposition of the barrier layers aluminium is vaporised and simultaneously at least one first reactive gas is introduced into the vacuum chamber and wherein for deposition of the intermediate layer aluminium is vaporised and simultaneously at least one second reactive gas is introduced into the vacuum chamber, and a silicon-containing layer is deposited as intermediate layer by means of a PECVD process. | 10-31-2013 |
| 20130302536 | METHOD FOR DEPOSITING A TRANSPARENT BARRIER LAYER SYSTEM - The invention relates to a method for producing a transparent bather layer system, wherein in a vacuum chamber at least two transparent barrier layers and a transparent intermediate layer disposed between the two barrier layers are deposited on a transparent plastic film, wherein for deposition of the barrier layers aluminium is vaporised and simultaneously at least one first reactive gas is introduced into the vacuum chamber and wherein for deposition of the intermediate layer aluminium is vaporised and simultaneously at least one second reactive gas and a gaseous or vaporous organic component are introduced into the vacuum chamber. | 11-14-2013 |
| 20130337194 | COVALENTLY BOUND MONOLAYER FOR A PROTECTIVE CARBON OVERCOAT - A magnetic data storage medium may include a substrate, a magnetic recording layer, a protective carbon overcoat, and a monolayer covalently bound to carbon atoms adjacent a surface of the protective carbon overcoat. According to this aspect of the disclosure, the monolayer comprises at least one of hydrogen, fluorine, nitrogen, oxygen, and a fluoro-organic molecule. In some embodiments, a surface of a read and recording head may also include a monolayer covalently bound to carbon atoms of a protective carbon overcoat. | 12-19-2013 |
| 20140234556 | MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE - A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric E | 08-21-2014 |
| 20140287162 | MICROWAVE PLASMA APPARATUS AND METHOD FOR MATERIALS PROCESSING - A microwave plasma apparatus for processing a material includes a plasma chamber, a microwave radiation source, and a waveguide guiding microwave radiation from the microwave radiation source to the plasma chamber. A process gas flows through the plasma chamber and the microwave radiation couples to the process gas to produce a plasma jet. A process material is introduced to the plasma chamber, becomes entrained in the plasma jet, and is thereby transformed to a stream of product material droplets or particles. The product material droplets or particles are substantially more uniform in size, velocity, temperature, and melt state than are droplets or particles produced by prior devices. | 09-25-2014 |
| 20140308461 | MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL - A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber ( | 10-16-2014 |
| 20140322456 | PCVD METHOD FOR MANUFACTURING A PRIMARY PREFORM FOR OPTICAL FIBERS - A method for manufacturing a primary preform including providing a hollow substrate tube, supplying to the interior of the tube a main gas flow containing at least one glass-forming gas and at least one secondary gas flow containing at least one precursor for a dopant, creating a plasma reaction zone in the interior of the tube to effect deposition, and interrupting the supply of the at least one secondary gas flow near the reversal points of the supply and discharge sides of the substrate tube. | 10-30-2014 |
| 20150030786 | MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL - A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm | 01-29-2015 |
| 20150118416 | SUBSTRATE TREATING APPARATUS AND METHOD - Provided is a substrate treating apparatus. The substrate treating apparatus includes a processing chamber, a substrate supporting unit, an antenna plate, a dielectric plate, a gas supplying unit or the like. In the gas supplying unit, an excitation gas injection unit is provided at a position higher than that of a process injection unit so as to inject an excitation gas containing an inert gas from a position higher than that of a process gas, thereby preventing a damage of the dielectric plate, generating high-density plasma, and preventing degradation of process performance in a process which is performed under a process pressure of 50 mTorr or more or uses a hydrogen gas. | 04-30-2015 |
| 20150315700 | METHOD FOR MAKING DIAMOND LAYERS BY CVD - A method of coating a non-refractory and/or non-planar substrate ( | 11-05-2015 |
| 20160013023 | FILM FORMING DEVICE, FILM FORMING METHOD, AND FILM FORMING PROGRAM | 01-14-2016 |
| 20160017490 | COATING METHOD - A method for coating a substrate surface such as a syringe part by PECVD is provided, the method comprising generating a plasma from a gaseous reactant comprising an organosilicon precursor and optionally an oxidizing gas by providing plasma-forming energy adjacent to the substrate, thus forming a coating on the substrate surface by plasma enhanced chemical vapor deposition (PECVD). The plasma-forming energy is applied in a first phase as a first pulse at a first energy level followed by further treatment in a second phase at a second energy level lower than the first energy level. The lubricity, hydrophobicity and/or barrier properties of the coating are set by setting the ratio of the O | 01-21-2016 |
| 20160177441 | Apparatus and Method of Manufacturing Free Standing CVD Polycrystalline Diamond Films | 06-23-2016 |
