| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427570000 | Utilizing plasma with other nonionizing energy sources | 38 |
| 20080206483 | PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION - A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power. | 08-28-2008 |
| 20080248218 | METHOD OF FORMING CARBON NANOTUBES, FIELD EMISSION DISPLAY DEVICE HAVING CARBON NANOTUBES FORMED THROUGH THE METHOD, AND METHOD OF MANUFACTURING FIELD EMISSION DISPLAY DEVICE - There are provided a method of forming carbon nano tubes, a field emission display device having the carbon nanotubes formed using the method, and a method of manufacturing the field emission display device. The method of forming carbon nanotubes includes forming a catalytic metal layer on a substrate, forming an insulation layer on the catalytic metal layer, and forming carbon nanotubes on the insulation layer. | 10-09-2008 |
| 20080268173 | PECVD PROCESS CHAMBER BACKING PLATE REINFORCEMENT - The present invention generally comprises a backing plate reinforcement apparatus for use in a plasma enhanced chemical vapor deposition apparatus. When processing large area substrates, the backing plate extending across the chamber may also be quite large. By supporting a central area of the backing plate with a frame structure, the backing plate may be maintained substantially planar. Alternatively, as necessary, the contour of the backing plate may be adjusted to suit the particular needs of the process. | 10-30-2008 |
| 20080286494 | ULTRALOW DIELECTRIC CONSTANT LAYER WITH CONTROLLED BIAXIAL STRESS - A method for forming a ultralow dielectric constant layer with controlled biaxial stress is described incorporating the steps of forming a layer containing Si, C, O and H by one of PECVD and spin-on coating and curing the film in an environment containing very low concentrations of oxygen and water each less than 10 ppm. A material is also described by using the method with a dielectric constant of not more than 2.8. The invention overcomes the problem of forming films with low biaxial stress less than 46 MPa. | 11-20-2008 |
| 20080292812 | Vacuum Treatment Installation and Vacuum Treatment Method - Vacuum treatment installation or vacuum treatment method for carrying out a plasma method, wherein the treatment is carried out in a vacuum chamber, in which are disposed a device for generating an electric low voltage arc discharge (NVBE) comprised of a cathode and an anode electrically interconnectable with the cathode via an arc generator, and a workpiece carrier electrically interconnectable with a bias generator for receiving and moving workpieces, as well as at least one feed for inert and/or reactive gas. At least a portion of the surface of the anode is therein fabricated of graphite and is operated at high temperature. | 11-27-2008 |
| 20090246407 | METHOD FOR FORMING AMORPHOUS CARBON FILM - An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing the supporting electrode and the counter electrode, and a DC pulse generator having a pulse source that applies a DC pulse voltage between the supporting electrode and the counter electrode. An amorphous carbon film is formed by supplying a mixed gas between the supporting electrode and the counter electrode such that the percentage of the acetylene gas relative to the carrier gas is 0.05% by volume or more and 10% by volume or less, and by generating plasma while a DC pulse voltage having a pulse width of 0.1 μsec or more and 5.0 μsec or less is applied to the counter electrode. | 10-01-2009 |
| 20100015357 | CAPACITIVELY COUPLED PLASMA ETCH CHAMBER WITH MULTIPLE RF FEEDS - A capacitive plasma discharge system employing multiple feeds of RF source power across an area of an electrode. Multiple RF feed locations across the electrode allow for control of the axial electric field across a radius at various azimuth angles of a plasma processing chamber. In an embodiment, a first RF power feed is coupled to a center of an electrode of the capacitively coupled chamber. The first RF power feed is further coupled to a first RF match network. A second RF power feed is coupled to the electrode at a first radius from the first RF power feed and at a first azimuth angle. The second RF power feed is further coupled to a second RF match network. | 01-21-2010 |
| 20100189923 | METHOD OF FORMING HARDMASK BY PLASMA CVD - A method of forming a transparent hardmask by plasma CVD includes: providing an underlying layer formed on a substrate in a reaction space; introducing an inert gas into the reaction space; introducing a hydrocarbon precursor vapor of an aromatic compound into the reaction space, wherein a flow ratio of the hydrocarbon precursor vapor to the inert gas is less than 0.1; and applying RF power to the reaction space, thereby depositing on the underlying layer a transparent hardmask having a film stress of −300 MPa to 300 MPa. | 07-29-2010 |
| 20100310790 | METHOD OF FORMING CARBON-CONTAINING LAYER - A method of forming a carbon-containing layer is provided. First, a substrate having a target layer thereon is provided. Next, a plasma containing C | 12-09-2010 |
| 20110223355 | THERMAL STABILIZATION OF COATING MATERIAL VAPOR STREAM - A coating system includes a work piece, a coating delivery apparatus configured to apply a coating material to the work piece in a plasma-based vapor stream, and a first electron gun configured to direct a first electron beam at the plasma-based vapor stream for adding thermal energy to the coating material in the plasma-based vapor stream. | 09-15-2011 |
| 20110223356 | COATING APPARATUS AND METHOD WITH INDIRECT THERMAL STABILIZATION - An apparatus includes a work piece support for holding and selectively rotating a work piece, a coating delivery apparatus configured to apply a coating material to the work piece, a susceptor positioned adjacent to the work piece support, and a first electron gun configured to direct a first electron beam at the susceptor such that the susceptor radiates heat toward the work piece. | 09-15-2011 |
| 20110223357 | SURFACE TREATMENT METHOD - A surface treatment method, which is capable of continuously and efficiently performing high quality surface treatment that can improve adhesion between a substrate and a functional layer by preventing oligomers from oozing out onto the substrate surface with the passage of time from surface treatment when performing surface treatment on the surface of a polyester substrate using an atmospheric-pressure plasma treatment, is provided. The method comprises an atmospheric-pressure plasma step for treating the surface of the substrate by atmospheric-pressure plasma, and a heating step for heating the surface of the substrate to a temperature exceeding the glass transition temperature Tg before the atmospheric-pressure plasma treatment step. | 09-15-2011 |
| 20120196051 | Deposition Apparatus and Methods - A deposition apparatus includes a deposition chamber and a deposition material source. An electron beam source is positioned to direct a first electron beam to vaporize a portion of the deposition material. A first electrode is provided for generating a primary plasma from the deposition material source. A second electrode is provided for generating a secondary plasma and further accelerating ions from the primary plasma. A bias electric potential is applied to the workpiece to draw ions from the secondary plasma to the workpiece. A control system may be coupled to the electron beam source, the bias voltage source, and power supplies for the first and second electrodes. | 08-02-2012 |
| 20130034669 | METHODS OF MAKING CELL CARRIER - A method of making a carrier for growing cells, including providing a polymer film; embossing a patterned surface one or more sides of the polymer film with an embossing roller; generating a pattern of structured indentations on the polymer film; and discretizing the patterned polymer film into a plurality of portions. The embossing pattern generates relief features on the carrier surface. An alternative method of making a carrier is also provided, including extruding a polymer film; embossing a patterned surface on the polymer film with a roller; generating a pattern of structured indentations on the polymer film; imparting a surface treatment to the film; and discretizing the treated polymer film into a plurality of portions. | 02-07-2013 |
| 20140072727 | VAPOUR DEPOSITION PROCESS FOR THE PREPARATION OF A CHEMICAL COMPOUND - The present invention provides a vapour deposition process for the preparation of a chemical compound, wherein the process comprises providing each component element of the chemical compound as a vapour, and co-depositing the component element vapours on a common substrate, wherein: the vapour of at least one component element is provided using a cracking source; the vapour of at least one other component element is provided using a plasma source; and at least one further component element vapour is provided; wherein the component elements react on the substrate to form the chemical compound. | 03-13-2014 |
| 20140220261 | MICROWAVE PLASMA REACTORS - Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber. | 08-07-2014 |
| 20140255621 | SYSTEMS AND METHODS FOR PRODUCTION OF GRAPHENE BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION - Production of bulk quantities of graphene for commercial ventures has proven difficult due to scalability issues in certain instances. Plasma-enhanced chemical vapor deposition of graphene can address at least some of these issues. Methods for production of graphene by plasma-enhanced chemical vapor deposition can include: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species. | 09-11-2014 |
| 20140363587 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space. | 12-11-2014 |
| 20150354061 | DEFECT CONTROL AND STABILITY OF DC BIAS IN RF PLASMA-BASED SUBSTRATE PROCESSING SYSTEMS USING MOLECULAR REACTIVE PURGE GAS - A substrate processing system comprises an upper electrode and a lower electrode arranged in a processing chamber. A gas delivery system selectively delivers at least one of precursor, one or more deposition carrier gases and a post deposition purge gas. An RF generating system deposits film on the substrate by generating RF plasma in the processing chamber between the upper electrode and the lower electrode by supplying an RF voltage to one of the upper electrode and the lower electrode while the precursor and the one or more deposition carrier gases are delivered by the gas delivery system. A bias generating circuit selectively supplies a DC bias voltage to one of the upper electrode and the lower electrode while the post deposition purge gas is delivered by the gas delivery system. The post deposition purge gas that is delivered by the gas delivery system includes a molecular reactant gas. | 12-10-2015 |
| 427571000 | With magnetic enhancement | 14 |
| 20090041951 | MAGNETIC ENHANCEMENT FOR MECHANICAL CONFINEMENT OF PLASMA - A method for processing a substrate is provided. The substrate is placed in a process chamber. A gas is provided from a gas source to the process chamber. A plasma is generated from the gas in the process chamber. The gas flows through a gap adjacent to at least one confinement ring to provide physical confinement of the plasma. Magnetic confinement of the plasma is provided to enhance the physical confinement of the plasma. | 02-12-2009 |
| 20090297730 | RF antenna assembly for treatment of inner surfaces of tubes with inductively coupled plasma - An antenna assembly for forming a barrier coating on the inner surface of a tube by means of a sealed annular chemical-plasma-reaction chamber defined by the inner wall of the tube, two spaced elements slidingly and sealingly moveable inside the tube, and a quartz tube that interconnects the cylindrical elements. The coating is formed by a PE CVD process generated inside the chamber by a transversal RF antenna unit which creates a plasma column that participates in rotation simultaneously with linear motion thus providing uniform coating of the inner surface of the tube. The method of the invention consists of depositing a layer of silicon dioxide onto the inner surface of a plastic tube by means of the aforementioned antenna assembly. The plasma column is rotated by the RF magnetic field which is rotated by using two RF generators of different frequencies that energize two groups of specifically interconnected coils. | 12-03-2009 |
| 20100003422 | DEPOSITION APPARATUS, FILM MANUFACTURING METHOD, AND MAGNETIC RECORDING MEDIUM MANUFACTURING METHOD - A deposition apparatus includes a plasma generating unit that generates an arc discharge between a target and an anode to generate plasma; a deposition chamber in which a base is disposed; and a plasma transfer unit that transfers the plasma to the deposition chamber, wherein at least part of the plasma transfer unit is electrically separated from the plasma generating unit and the deposition chamber, and a negative voltage is applied to at least part of the plasma transfer unit. | 01-07-2010 |
| 20100003423 | PLASMA GENERATING APPARATUS AND FILM FORMING APPARATUS USING PLASMA GENERATING APPARATUS - The cross section of a beam is flattened by causing a plasma beam ( | 01-07-2010 |
| 20100075065 | FILM DEPOSITION OF AMORPHOUS FILMS BY ELECTRON CYCLOTRON RESONANCE - A method is disclosed for forming a film of an amorphous material, for example amorphous silicon, on a substrate ( | 03-25-2010 |
| 20100136262 | INDUCTIVE PLASMA SOURCE WITH HIGH COUPLING EFFICIENCY - A method and apparatus are provided for processing a substrate with a radiofrequency inductive plasma in the manufacture of a device. The inductive plasma is maintained with an inductive plasma applicator having one or more inductive coupling elements. There are thin windows between the inductive coupling elements and the interior of the processing chamber. Various embodiments have magnetic flux concentrators in the inductive coupling elements and feed gas holes interspersed among the inductive coupling elements. The thin windows, magnetic flux concentrators, and interspersed feed gas holes are useful to effectuate uniform processing, high power transfer efficiency, and a high degree of coupling between the applicator and plasma. In some embodiments, capacitive current is suppressed using balanced voltage to power an inductive coupling element. | 06-03-2010 |
| 20110177260 | PLASMA CVD DEVICE, METHOD FOR DEPOSITING THIN FILM, AND METHOD FOR PRODUCING MAGNETIC RECORDING MEDIUM - A plasma CVD device that deposits a thin film without using a filament is provided. The plasma CVD device according to the present invention includes: a chamber ( | 07-21-2011 |
| 20110305847 | LINEAR PLASMA SYSTEM - The invention relates to a linear plasma system. The linear plasma system includes a number of troughs of an electrode alternating with a number of peaks of the electrode forming a sawtooth shape, a reactive gas feed, a precursor gas feed, and a power source. The reactive gas feed is disposed on the electrode and configured to continuously release a reactive gas into an array of holes located at the trough apex. The precursor gas feed is disposed on the electrode and configured to continuously release a precursor gas into an array of holes located at the peak apex. The power source is configured to apply radio frequency power to the electrode to simultaneously interact with the reactive gas mixed with the precursor gas to generate plasma, which is used to create a product that is deposited on a substrate. | 12-15-2011 |
| 20110311735 | MAGNETRON DESIGN FOR RF/DC PHYSICAL VAPOR DEPOSITION - Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc. | 12-22-2011 |
| 20120027954 | MAGNET FOR PHYSICAL VAPOR DEPOSITION PROCESSES TO PRODUCE THIN FILMS HAVING LOW RESISTIVITY AND NON-UNIFORMITY - Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed. | 02-02-2012 |
| 20120034394 | DISTRIBUTED MULTI-ZONE PLASMA SOURCE SYSTEMS, METHODS AND APPARATUS - A plasma source includes a ring plasma chamber, a primary winding around an exterior of the ring plasma chamber and multiple ferrites, wherein the ring plasma chamber passes through each of the ferrites. A system and method for generating a plasma are also described. | 02-09-2012 |
| 20120064259 | ROTARY MAGNET SPUTTERING APPARATUS - Provided is a rotary magnet sputtering apparatus that reduces an adverse effect due to heating of a target portion and so on caused by an increase in plasma excitation power. The rotary magnet sputtering apparatus has a structure in which the heat is removed from the target portion by causing a cooling medium to flow in helical spaces formed between a plurality of helical plate-like magnet groups or by providing a cooling passage in a backing plate which supports the target portion. | 03-15-2012 |
| 20120107524 | THIN-FILM MANUFACTURING METHOD AND APPARATUS - A thin-film manufacturing method includes the steps of: generating a plasma from source gas; extracting ions from the plasma; and depositing a thin film on one side or both sides of a substrate to be deposited with the ions. The method is performed in an apparatus including: a plasma chamber generating the plasma; a film deposition chamber accommodating the substrate to be deposited; an ion transfer path for transferring the ions from the plasma chamber to the film deposition chamber; a branch pipe branching from the ion transfer path; and an exhaust system connected to the branch pipe. The thin film is formed while the source gas except the ions is exhausted from the branch pipe. | 05-03-2012 |
| 20150064364 | Deposition System And Method Of Forming A Metalloid-Containing Material Therewith - A method of forming a metalloid-containing material comprises the step of preparing a hydrometalloid compound in a low volume on-demand reactor. The method further comprises the step of feeding the hydrometalloid compound prepared in the microreactor to a deposition apparatus. Additionally, the method comprises the step of forming the metalloid-containing material from the hydrometalloid compound via the deposition apparatus. A deposition system for forming the metalloid-containing material comprises at least one low volume on-demand reactor coupled to and in fluid communication with a deposition apparatus. | 03-05-2015 |
| 427572000 | Light as energy source | 2 |
| 20100028561 | METHOD FOR PRODUCING A COATING BY ATMOSPHERIC PRESSURE PLASMA TECHNOLOGY - A method of coating a substrate includes: providing a substrate ( | 02-04-2010 |
| 20160177449 | PLASMA PROCESSING APPARATUS AND OPERATION METHOD THEREOF | 06-23-2016 |
| 427573000 | With heated substrate | 2 |
| 20090017229 | Processing System Platen having a Variable Thermal Conductivity Profile - A platen for a processing system includes a first and a second thermal region that are separated by at least one boundary. A first fluid conduit is positioned in the first thermal region. A second fluid conduit is positioned in the second thermal region. A fluid reservoir having a first output is coupled to the first fluid conduit and a second output that is coupled to the second fluid conduit. The fluid reservoir provides fluid to the first fluid conduit with first fluid conditions that provides a first thermal conductivity to the first thermal region and provides fluid to the second fluid conduit with second fluid conditions that provides a second thermal conductivity to the second thermal region so that a predetermined thermal conductivity profile is achieved in the platen. | 01-15-2009 |
| 20090181186 | PLASMA ARC COATING SYSTEM - A system for coating a substrate includes a heater that heats the substrate. The heater includes a two-dimensional array of a plurality of heat sources which supply heat to the substrate when the substrate is in the presence of the array of heat sources. The heater further includes a controller that controls the operation of each heat source to heat a localized area of the surface of the substrate according to a predetermined temperature profile for the substrate. | 07-16-2009 |
| 427574000 | Silicon containing coating | 1 |
| 20100080933 | MULTI-ELECTRODE PECVD SOURCE - Embodiments of the present invention generally relate to methods and apparatus for plasma generation in plasma processes. The methods and apparatus generally include a plurality of electrodes. The electrodes are connected to a RF power source, which powers the electrodes out of phase from one another. Adjacent electrodes are electrically isolated from one another by electrically insulating members disposed between and coupled to the electrodes. Processing gas may be delivered and/or withdrawn through the electrodes and/or the electrically insulating members. The substrate may remain electrically floating because the plasma may be capacitively coupled to it through a differential RF source drive. | 04-01-2010 |
