| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427530000 | Inorganic metal compound present in plating or implanted material (e.g., nitrides, carbides, borides, etc.) | 6 |
| 20090098307 | MANUFACTURING METHOD FOR FAR-INFRARED IRRADIATING SUBSTRATE - A manufacturing method for a far-infrared irradiating substrate is provided. The manufacturing method comprises steps of providing a substrate, providing a far-infrared irradiating material and evaporating the far-infrared irradiating material to form a thin film onto the substrate. The far-infrared irradiating substrate provided by the present invention not only has a high emission coefficient of far-infrared ray, but also do not cause a potential exposure of an ionizing radiation. | 04-16-2009 |
| 20090162565 | Method for Forming Tantalum Nitride Film - A tantalum nitride film is formed by introducing a raw gas consisting of a coordination compound constituted by an elemental tantalum (Ta) having a coordinated ligand represented by the general formula: N═(R, R′) (in the formula, R and R′ may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) and an oxygen atom-containing gas into a film-forming chamber to make them react with one another on a substrate and to thus form a compound represented by the formula: TaO | 06-25-2009 |
| 20100104766 | METHOD FOR USE WITH A COATING PROCESS - A method for use with a coating process includes depositing a ceramic coating on a substrate within a coating chamber. Prior to depositing the ceramic coating, an electron beam source is used to heat a ceramic material. The ceramic material radiates heat to heat a substrate to an oxidation temperature to form an oxide layer on the substrate. A desired evaporation rate of the ceramic material is established during the heating to thereby provide an improved ceramic coating. | 04-29-2010 |
| 20120070589 | CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY - A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively. | 03-22-2012 |
| 20140205763 | GROWTH OF GRAPHENE FILMS AND GRAPHENE PATTERNS - Large area graphene can be fabricated by depositing carbon and catalytic metal thin film(s) on a substrate, heating the carbon and the catalytic metal, and forming graphene on the substrate. The catalytic metal is evaporated during the heating process. The catalytic metal can be, for example, nickel, cobalt, or iron. | 07-24-2014 |
| 20150017343 | DIE FOR EXTRUSION MOLDING, METHOD OF PRODUCING DIE FOR EXTRUSION MOLDING, EXTRUDER, AND METHOD OF PRODUCING HONEYCOMB STRUCTURED BODY - A die for extrusion molding includes a first face, a second face, a raw material supply section, and a molding section. The second face is provided opposite the first face. The raw material supply section includes a first through hole that extends from the first face toward the second face. The molding section includes a second through hole and a nitride layer. The second through hole extends from the second face toward the first face so as to communicate with the first through hole. The nitride layer is provided on an inner wall surface of the second through hole. | 01-15-2015 |
