| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427527000 | Silicon present in substrate, plating, or implanted layer | 16 |
| 20080299325 | Processes for preparing electrically-conductive glass-ceramics - Discloses are processes for preparing conductive glass-ceramics employ segregation or ion exchange. | 12-04-2008 |
| 20090087579 | METHOD FOR DIRECTIONAL DEPOSITION USING A GAS CLUSTER ION BEAM - A method for depositing material on a substrate is described. The method comprises directionally depositing a thin film on one or more surfaces of a substrate using a gas cluster ion beam (GCIB) formed from a source of precursor to the thin film, wherein the deposition occurs on surfaces oriented substantially perpendicular to the direction of incidence of the GCIB, and deposition is substantially avoided on surfaces oriented substantially parallel to the direction of incidence. | 04-02-2009 |
| 20090142509 | HARD COATING EXCELLENT IN SLIDING PROPERTY AND METHOD FOR FORMING SAME - Disclosed is a hard coating excellent in wear resistance, insusceptible to seizure, and excellent sliding property even after use over the long term, and a method capable of forming the hard coating excellent in sliding property in a short time. The hard coating is a hard coating expressed by chemical formula M | 06-04-2009 |
| 20090233004 | METHOD AND SYSTEM FOR DEPOSITING SILICON CARBIDE FILM USING A GAS CLUSTER ION BEAM - A method for depositing material on a substrate is described. The method comprises maintaining a reduced-pressure environment around a substrate holder for holding a substrate having a surface, and holding the substrate securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB to the reduced-pressure environment, and irradiating the accelerated GCIB onto at least a portion of the surface of the substrate to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further the compound may possess a Si—C bond. | 09-17-2009 |
| 20090280266 | BARRIER FILM AND LAMINATED MATERIAL, CONTAINER FOR WRAPPING AND IMAGE DISPLAY MEDIUM USING THE SAME, AND MANUFACTURING METHOD FOR BARRIER FILM - An object of the present invention is to provide a barrier film having the extremely high barrier property and the better transparency, a method for manufacturing the same, and a laminated material, a container for wrapping and an image displaying medium using the barrier film. According to the present invention, there is provided a barrier film provided with a barrier layer on at least one surface of a substrate film, wherein the barrier layer is a silicon oxide film having an atomic ratio in a range of Si:O:C=100:160 to 190:30 to 50, a peak position of infrared-ray absorption due to Si—O—Si stretching vibration between 1030 to 1060 cm | 11-12-2009 |
| 20090324844 | PROTECTIVE COAT AND METHOD FOR MANUFACTURING THEREOF - A method for producing a protective coat formed on the top surface of a substrate, or on the top surface of a thin film layered body formed on the substrate is disclosed, wherein the protective coat comprises silicon oxynitride in which the atomic ratio of Si/O/N is 100/X/Y (130≦X+Y≦180, 10≦X≦135, 5≦Y≦150), wherein the protective coat is formed by a sputtering method in which silicon nitride is used as a target material, an inert gas is used as a sputtering gas, and N | 12-31-2009 |
| 20100323121 | Method of preparing a diaphragm of high purity polysilicon with multi-gas microwave source - A method of preparing a diaphragm of high purity polysilicon continuously, includes: impacting high purity silane gas molecules with a high temperature Argon ion beam source in a microwave resonator, so as to make an energy of the high purity silane gas molecules close to a particle binding energy of formation and form grains on a surface of the substrate when the high purity silane gas molecules reach a substrate of the microwave resonator, wherein the particle binding energy is more than 50 kev, the grains have diameters of about 50 nm. | 12-23-2010 |
| 20110039034 | PULSED DEPOSITION AND RECRYSTALLIZATION AND TANDEM SOLAR CELL DESIGN UTILIZING CRYSTALLIZED/AMORPHOUS MATERIAL - A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may include creating a plasma having deposition-related species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second time period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved. In another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers. | 02-17-2011 |
| 20110206859 | ENGINEERED FLUORIDE-COATED ELEMENTS FOR LASER SYSTEMS - The invention is directed to elements having fluoride coated surfaces having multiple layers of fluoride material coatings for use in laser systems, and in particular in laser systems operating at wavelength <200 nm. In a particular embodiment the invention is directed to highly reflective mirrors for use in wavelengths <200 nm laser systems. The invention describes the mirrors and a method of making them that utilizes a plurality of periods of fluoride coatings, each period comprising one layer a high refractive index fluoride material and one layer low refractive index fluoride material, and additionally at least one layer of an amorphous silica material. The silica material can be inserted between each period, inserted between a stack consisting of a plurality of periods, and, optionally, can also be applied as the final layer of the finished element to protect the element. | 08-25-2011 |
| 20120135157 | Coating and Ion Beam Mixing Apparatus and Method to Enhance the Corrosion Resistance of the Materials at the Elevated Temperature Using the Same - The present invention relates to a ceramic coating and ion beam mixing apparatus for improving corrosion resistance, and a method of reforming an interface between a coating material and a base material. In samples fabricated using the coating and ion beam mixing apparatus, adhesiveness is improved, and the base material is reinforced, thereby improving resistance to thermal stress at high temperatures and high-temperature corrosion resistance of a material to be used in a sulfuric acid decomposition apparatus for producing hydrogen. | 05-31-2012 |
| 20140065318 | Method For Forming Electret Containing Positive Ions - A method for forming an electret containing positive ions, includes: a first step of contacting water vapor including positive ions to a Si substrate to which heat is being applied, and forming an oxide layer including those ions; a second step of, along with applying an electric field that makes the side of the oxide layer that does not contact the Si substrate be the negative side, and that makes its other side be a positive side, applying heat to the Si substrate in a hydrogen atmosphere, and causing the ions in the oxide layer to shift; and a third step of contacting water vapor including a chemical substance, in an atmosphere of an inactive gas, for forming a hydrophobic chemically adsorbed monomolecular layer, and thus forming a hydrophobic membrane upon the oxide layer; wherein the second step and the third step are performed continuously within one common vessel. | 03-06-2014 |
| 20140178596 | METHOD FOR RECYCLING A SUBSTRATE HOLDER - A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate. | 06-26-2014 |
| 20140193591 | METHOD FOR PRODUCING A REFLECTIVE OPTICAL ELEMENT FOR EUV-LITHOGRAPHY - A method aleviating blistering, cracking and chipping in topmost layers of a multilayer system exposed to reactive hydrogen, when producing a reflective optical element ( | 07-10-2014 |
| 20150140229 | METHOD AND APPARATUS FOR FORWARD DEPOSITION OF MATERIAL ONTO A SUBSTRATE USING BURST ULTRAFAST LASER PULSE ENERGY - A process of forward deposition of a material onto a target substrate is accomplished by passing a burst of ultrafast laser pulses of a laser beam through a carrier substrate that is transparent to a laser beam. The carrier substrate is coated with a material to be transferred on the bottom side thereof. Electrons on the back side of said transparent carrier coated with the material are excited by the first few sub-pulses of the laser beam which lifts the material from the carrier substrate and subsequent sub-pulse of the laser beam send the material into space at hypersonic speed by a shock wave that drives the material with forward momentum across a narrow gap between the carrier substrate and the target substrate, and onto the target substrate. | 05-21-2015 |
| 20160047979 | METHOD FOR PROCESSING SILICON-BASED WIRE OPTICAL WAVEGUIDE - A method is provided for processing a silicon-based wire optical waveguide, by which an optical transmission loss of the silicon-based wire optical waveguide due to ion irradiation with high energy is suppressed, and an end portion of the silicon-based wire optical waveguide that is three-dimensionally curved in a self-aligning manner is obtained. According to the method a protective film is selectively formed on the silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and ions are implanted to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of the silicon-based wire optical waveguide to the particular direction in a self-alignment manner. | 02-18-2016 |
| 20160194758 | ADVANCED PROCESS FLOW FOR HIGH QUALITY FCVD FILMS | 07-07-2016 |
