| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 427509000 | Vapor deposition utilized | 12 |
| 20080206477 | Apparatus for Plasma-Enhanced Chemical Vapor Deposition (Pecvd) of an Internal Barrier Layer Inside a Container, Said Apparatus Including a Gas Line Isolated by a Solenoid Valve - A machine ( | 08-28-2008 |
| 20090148617 | METHOD OF PREPARING A POROUS DIELECTRIC MATERIAL ON A SUBSTRATE - The invention relates to a method for producing an oriented-porosity dielectric material on a substrate comprising: | 06-11-2009 |
| 20090233003 | METHODS AND SYSTEMS RELATING TO LIGHT SOURCES FOR USE IN INDUSTRIAL PROCESSES - System and methods are disclosed in connection with a reaction at or below the surface of a work object, in the context of a fluid flow fostering the reaction. In some example embodiments, the reaction is fostered by (1) creating fluid flow of an inerting fluid over a surface during exposure of the surface to a predetermined type of light, (2) creating fluid flow comprising a reactive species that reacts with another species at or below the work surface in a predetermined manner and/or (3) creating a fluid flow comprising a catalytic species that catalyzes a reaction in a predetermined manner, e.g., during exposure of the surface to a predetermined type of light. In some example embodiments, a light source is employed that comprises a solid-state light source, e.g., a dense array of solid-state light sources. In at least one of such example embodiments, the reaction is a photoreaction associated with the light source. | 09-17-2009 |
| 20110159202 | Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD - A method for sealing pores at a surface of a dielectric layer formed on a substrate, includes: providing a substrate on which a dielectric layer having a porous surface is formed as an outermost layer; placing the substrate in an evacuatable chamber; irradiating the substrate with UV light in an atmosphere of hydrocarbon and/or oxy-hydrocarbon gas; sealing pores at the porous surface of the dielectric layer as a result of the irradiation; and continuously irradiating the substrate with UV light in the atmosphere of hydrocarbon and/or oxy-hydrocarbon gas until a protective film having a desired thickness is formed on the dielectric layer as a result of the irradiation. | 06-30-2011 |
| 20110229652 | DECORATING METHOD - A decorating method includes the steps of coating a base material with a coating composition comprising 45-95 parts of urethane methacrylate, 1-50 parts of a compound having at least an intra-molecular radical polymeric double bond, and 0.1-15 parts of photopolymerization initiator. The coating is hardened to form an under coat. Vacuum deposition of indium and/or tin in a crystalline structure-independent way is performed to form a non-conductive thin film. Then, a UV-hardening resin, poly acrylic-urethane resin, or acrylate-silica resin is applied, which is hardened to form a hard coat layer. | 09-22-2011 |
| 20120308735 | ULTRA LOW DIELECTRIC CONSTANT MATERIAL WITH ENHANCED MECHANICAL PROPERTIES - A method for fabricating an ultra low dielectric constant material is disclosed. The method includes placing a substrate into a deposition reactor. A first precursor is flowed into the deposition reactor. The first precursor is a matrix precursor. A second precursor is flowed into the deposition reactor. The second precursor is a porogen precursor. A preliminary film is deposited onto the substrate based on the first and second precursors. The preliminary film includes Si, C, O, and H atoms. A first ultraviolet curing step is performed on the substrate including the preliminary film at a first temperature. At least a second ultraviolet curing step is performed on the substrate including the preliminary film at a second temperature. | 12-06-2012 |
| 20130034663 | METHODS AND SYSTEMS RELATING TO LIGHT SOURCES FOR USE IN INDUSTRIAL PROCESSES - System and methods are disclosed in connection with a reaction at or below the surface of a work object, in the context of a fluid flow fostering the reaction. In some example embodiments, the reaction is fostered by (1) creating fluid flow of an inerting fluid over a surface during exposure of the surface to a predetermined type of light, (2) creating fluid flow comprising a reactive species that reacts with another species at or below the work surface in a predetermined manner and/or (3) creating a fluid flow comprising a catalytic species that catalyzes a reaction in a predetermined manner, e.g., during exposure of the surface to a predetermined type of light. In some example embodiments, a light source is employed that comprises a solid-state light source, e.g., a dense array of solid-state light sources. In at least one of such example embodiments, the reaction is a photoreaction associated with the light source. | 02-07-2013 |
| 20130196076 | Deposition Source, Deposition Apparatus, and Method of Manufacturing Organic Light-Emitting Display Apparatus - A deposition source for depositing a deposition material on a substrate, the deposition source including: a nozzle disposed to face the substrate and discharge the deposition material toward the substrate; and a hardening portion disposed to at least one side of the nozzle for immediately hardening the deposition material discharged via the nozzle when the deposition material reaches the substrate. The deposition source being part of a deposition apparatus for manufacturing an organic light-emitting display having improved characteristics of a deposited film and encapsulation characteristics. | 08-01-2013 |
| 20130230663 | PROTECTIVE FILM FORMING METHOD, AND SURFACE FLATTENING METHOD - A method for flattening a surface of a substrate in which a film formation surface has a recess and a convex and a method for forming a protective film by using a photo-curable organic thin film material are provided. A gas of an organic thin film material having photocurability is liquefied on the surface of a substrate having the recess and the convex and a liquid organic layer is grown on the surface of the substrate (first liquid layer growing step T | 09-05-2013 |
| 20130260054 | Three-Dimensional Photoresists via Functionalization of Polymer Thin Films Fabricated by iCVD - Disclosed are simple, efficient, and scalable methods of patterning polymeric or metallic microstructures on planar or non-planar surfaces. The methods utilize initiated chemical vapor deposition (iCVD) technology. Also disclosed are patterned articles produced by these methods, and methods of using the articles. | 10-03-2013 |
| 20150064361 | UV treatment for ALD film densification - Irradiation with ultraviolet (UV) light during atomic layer deposition (ALD) can be used to cleave unwanted bonds on the layer being formed (e.g., trapped precursor ligands or process-gas molecules). Alternatively, the UV irradiation can be used to excite the targeted bonds so they may be more easily cleaved by other means. The use of UV may enable the formation of low-defect-density films at lower deposition temperatures (e.g., <250 C), or reduce the need for a high-temperature post-deposition anneal, improving the quality of devices formed on heat-sensitive materials such as germanium. | 03-05-2015 |
| 20160017492 | UV ASSISTED SILYLATION FOR POROUS LOW-K FILM SEALING - Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer. | 01-21-2016 |
