| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 423508000 | SELENIUM OR TELLURIUM OR COMPOUND THEREOF | 56 |
| 20080241050 | SEMICONDUCTING AEROGELS FROM CHALCOGENIDO CLUSTERS WITH BROAD APPLICATIONS - Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M | 10-02-2008 |
| 20080299033 | Inorganic Metal Chalcogen Cluster Precursors and Methods for Forming Colloidal Metal Chalcogenide Nanoparticles Using the Same - Methods for forming colloidal metal chalcogenide nanoparticles generally include terming soluble inorganic metal chalcogen cluster precursors, which are then mixed with a surfactant and heated to form the colloidal metal chalcogenide nanoparticles. The soluble inorganic metal chalcogen cluster precursors are generally formed using a hydrazine-based solvent. The methods can be used with main group and transition metals. | 12-04-2008 |
| 20080311028 | Assemblies of anisotropic nanoparticles - Methods and compositions of matter are described for assemblies of anisotropic nanoparticles. A method, includes forming a substantially close packed dense layer by assembling a plurality of anisotropic nanoparticles, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction, wherein assembling includes mechanically interacting the plurality of anisotropic nanoparticles by imposing a delocalized force that defines a direction that is substantially perpendicular to a basal plane of the substantially closed packed dense layer; and imposing a fluctuating force to which the anisotropic nanoparticles respond, wherein fluctuations in a magnitude of the imposed force are sufficient to overcome a short range weak attractive force between members of the plurality of anisotropic nanoparticles with respect to anisotropic nanoparticles that are not substantially overlapping. The plurality of anisotropic nanoparticles are substantially aligned with respect to each other to define the substantially close packed dense layer and the substantially closed packed dense layer has a non-random shared crystallographic orientation that is substantially aligned with the basal plane of the substantially close packed dense layer. A composition of matter, includes a plurality of anisotropic nanoparticles that are in physical contact with one another, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction. The plurality of anisotropic nanoparticles are substantially aligned with respect to each other to define a substantially close packed dense layer having a non-random shared crystallographic orientation that is substantially aligned with a basal plane of the substantially close packed dense layer. | 12-18-2008 |
| 20090074652 | TELLURIUM PRECURSORS FOR GST DEPOSITION - A process for depositing a tellurium-containing film on a substrate is disclosed, including (a) providing a substrate in a reactor; (b) introducing into the reactor at least one tellurium-containing precursor having the formula TeL | 03-19-2009 |
| 20090142254 | Method of making mixed metal oxide catalysts for ammoxidation and/or oxidation of lower alkane hydrocarbons - The present invention comprises a method for preparing a mixed oxide catalyst for use in producing acrylonitrile or methacrylonitrile from propane or isobutene by ammoxidation in a gaseous phase via methods of heating or calcining precursor solid mixture to obtain mixed metal oxide catalyst compositions that exhibit catalytic activity. | 06-04-2009 |
| 20090196817 | METHOD FOR MAKING A COPPER INDIUM CHALCOGENIDES POWDER - A method for making a copper indium chalcogenides powder, includes: (a) reacting a reactant mixture that contains a Cu-containing material, an In-containing material, and a chalcogenides-containing material in a polar organic solvent at an elevated temperature so as to form a precipitate, the polar organic solvent having a molecular structure containing at least one of nitrogen atom and oxygen atom, each of which having at least one lone electron pair, the polar organic solvent further having a dipole moment greater than 2.3 debye; and (b) separating the polar organic solvent from the precipitate. | 08-06-2009 |
| 20090280052 | Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same - This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 11-12-2009 |
| 20100129285 | Process for the Synthesis of Nanotubes and Fullerene-Like Nanostructures of Transition Metal Dichalcogenides, Quasi One-Dimensional Structures of Transition Metals and Oxides of Transition Metals - The object of the invention is a process for the synthesis of nanotubes of transition metal dichalcogenides, of fullerene-like nanostructures of transition metal dichalcogenides, of nanotubes of transition metal dichalcogenides, filled with fullerene-like nanostructures of transition metal dichalcogenides, of quasi one-dimensional structures (nanowires, microwires and ribbons) of transition metal oxides and of quasi one-dimensional structures of transition metal dichalcogenides, consisting of fine crystallites of transition metal dichalcogenides. The process is characterized in that the synthesis occurs by the chemical transformation of quasi one-dimensional compounds with a sub-micron diameter, described by the formula M | 05-27-2010 |
| 20100172822 | USE OF SODIUM SELENOSULFATE FOR SUPPLEMENTING SELENIUM AND ENHANCING THE THERAPEUTIC EFFICACY OF CHEMOTHERAPY AGENTS, AND A RAPID PROCESS FOR PREPARING SODIUM SELENOSULFATE - The present invention relates to a use of sodium selenosulfate for supplementing selenium and enhancing the therapeutic efficacy of chemotherapy agents for cancers, and a rapid process for preparing sodium selenosulfate comprising: mixing sodium selenite, the reducing agent and sodium sulfite in a certain proportion to form sodium selenosulfate quickly. | 07-08-2010 |
| 20100260661 | PREPARATION METHOD OF CHALCOPYRITE-TYPE COMPOUNDS WITH MICROWAVE IRRADIATION - A method for preparing a chalcopyrite-type semiconductor compound which is widely used as a sunlight-absorbing material. More specifically, disclosed is a method for preparing a chalcopyrite-type compound, in which microwaves are used as heat sources in the preparation of the chalcopyrite-type compound, and the chalcopyrite-type compound can be produced in a large amount in a short reaction time using a batch or continuous reactor. | 10-14-2010 |
| 20100329967 | FABRICATION METHOD FOR CHALCOPYRITE POWDER - The invention provides a fabrication method for a chalcopyrite powder. The fabrication method includes: (a) mixing a Group IB compound and a Group IIIA compound in a solvent; (b) drying or precipitating the solution of step (a) to obtain a precursor containing Group IB and Group IIIA elements; (c) mixing a solution or powder containing a Group VIA compound with the precursor; and (d) heating the mixture of step (c) to obtain the chalcopyrite powder. | 12-30-2010 |
| 20110206599 | METAL CHALCOGENIDE AQUEOUS PRECURSORS AND PROCESSES TO FORM METAL CHALCOGENIDE FILMS - Metal chalocogenide precursor solutions are described that comprise an aqueous solvent, dissolved metal formate salts and a chalcogenide source composition. The chalcogenide source compositions can be organic compounds lacking a carbon-carbon bond. The precursors are designed to form a desired metal chalcogenide upon thermal processing into films with very low levels of contamination. Potentially contaminating elements in the precursors form gaseous or vapor by-products that escape from the vicinity of the product metal chalcogenide films. | 08-25-2011 |
| 20120063990 | METHOD FOR FORMING GRANULAR POLYNARY NANO COMPOUND - The invention discloses a method for forming granular polynary nano compound, which comprises the steps of (S | 03-15-2012 |
| 20120189531 | METHOD FOR MAKING A CHALCOPYRITE-TYPE COMPOUND - A method for making a chalcopyrite-type compound includes: reacting a reaction mixture in a first solvent under reflux condition to form the chalcopyrite-type compound containing M | 07-26-2012 |
| 20120189532 | COLLOIDAL NANOPARTICLE MATERIALS FOR PHOTODETECTORS AND PHOTOVOLTAICS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 07-26-2012 |
| 20120201741 | SYNTHESES OF QUATERNARY CHALCOGENIDES IN CESIUM, RUBIDIUM, BARIUM AND LANTHANUM CONTAINING FLUXES - The present invention relates to syntheses of quaternary chalcogenide compounds such as copper zinc tin sulfide in cesium, rubidium, barium and lanthanum containing fluxes. The quaternary chalcogenides are useful as the absorber layer as a p-type semiconductor in a thin film solar cell application. | 08-09-2012 |
| 20130129603 | Tellurium (Te) Precursors for Making Phase Change Memory Materials - Tellurium (Te)-containing precursors, Te containing chalcogenide phase change materials are disclosed in the specification. A method of making Te containing chalcogenide phase change materials using ALD, CVD or cyclic CVD process is also disclosed in the specification in which at least one of the disclosed tellurium (Te)-containing precursors is introduced to the process. | 05-23-2013 |
| 20130149232 | METHOD OF PRODUCING PHARMACOLOGICALLY PURE CRYSTALS - The present invention relates to means and methods for producing crystals or crystalline substances. In particular, crystals or crystalline substances which are useful as pharmaceutical ingredients can be manufactured. | 06-13-2013 |
| 20130302239 | METHOD FOR MAKING A CHALCOPYRITE-TYPE COMPOUND - A method for making a chalcopyrite-type compound includes reacting a reaction mixture in a solvent under a reaction temperature and a reaction pressure to form the chalcopyrite-type compound. The reaction mixture includes at least one first compound and at least one second compound. The first compound contains M | 11-14-2013 |
| 20150118144 | DISPERSIBLE METAL CHALCOGENIDE NANOPARTICLES - The present invention relates to dispersible binary and ternary metal chalcogenide nanoparticle compositions that are substantially free of organic stabilizing agents. These nanoparticle compositions can be used as precursor inks for the preparation of copper zinc tin chalcogenides and copper indium gallium chalcogenides. In addition, this invention provides processes for manufacturing coated substrates and thin films of copper zinc tin chalcogenide and copper indium gallium chalcogenide. This invention also provides process for manufacturing photovoltaic cells incorporating such thin films. | 04-30-2015 |
| 20180023213 | ARTICLE COMPRISING A SEMICONDUCTING MATERIAL | 01-25-2018 |
| 423509000 | Binary compound | 29 |
| 20090060829 | Cold-walled vessel process for compounding, homogenizing and consolidating semiconductor compounds - A method is provided for compounding, homogenizing and consolidating compounds. In one embodiment, the charge components are mixed in a controlled addition process, then the newly-formed compound is heated to become totally molten, followed by a rapid quench at room temperature. In an alternate embodiment, the components are supplied with an excess of one component acting as a solvent, heated to dissolve additional components, and then the solvent is separated from the compound to produce homogeneous consolidated compounds. The methods herein are advantageously applied to provide an economical and fast process for producing CdTe, CdZnTe and ZnTe compounds. | 03-05-2009 |
| 20090074653 | ZNX (X=S, SE, TE) QUANTUM DOT PREPARATION METHOD - A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot. | 03-19-2009 |
| 20090269271 | SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METHOD THEREOF - Provided is a semiconductor substrate for epitaxial growth which does not require any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe system compound semiconductor substrate for the epitaxial growth of the HgCdTe film is housed in an inactive gas atmosphere, in a predetermined period of time (for example, 10 hours) after mirror finish treatment thereof, to thereby regulate the proportion of Te oxide of the total amount of Te on the substrate surface which is obtained by XPS measurement so as to be not more than 30%. | 10-29-2009 |
| 20100003187 | RAPID SYNTHESIS OF TERNARY, BINARY AND MULTINARY CHALCOGENIDE NANOPARTICLES - A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm. | 01-07-2010 |
| 20100028249 | Controlled synthesis of nanoparticles using continuous liquid-flow aerosol method - A method and apparatus for producing surface stabilized nanometer-sized particles includes the steps of mixing reactants, a surface-stabilizing surfactant, and a high boiling point liquid to form a mixture, continuously passing the mixture through an ultrasonic spray nozzle to form a mist of droplets of the mixture, injecting the mist directly into a furnace to cause a reaction between species of the mixture, and collecting the nanometer-sized products. The ultrasonic nozzle is positioned directly at one end of the heating furnace, preferably the top end, for travel of the droplets through the furnace. The continuous liquid-flow process, along with certain operating parameters, eliminates the need for dilution of the high boiling point liquid with a low boiling point solvent as in the prior art, significantly increases the yield, improves the quality of the product, and makes the process scalable. | 02-04-2010 |
| 20100080750 | CADMIUM TELLURIDE PRODUCTION PROCESS - A method for producing cadmium telluride from elemental cadmium and elemental tellurium is disclosed. For example, the method disclosed can be used for producing multi-kilogram batches of cadmium telluride in a few hours. | 04-01-2010 |
| 20100226849 | Semiconductor Nanocrystal Synthesis Using a Catalyst Assisted Two-phase Reaction - A method for producing a high yield of high quality, low size distribution, and size tunable semiconductor nanocrystals. The method produces III-V, II-VI, II-V, IV-VI, IV, ternary, quarternary, and quinary semiconductor nanocrystals (quantum dots) using a catalyst assisted two-phase reaction. | 09-09-2010 |
| 20100278718 | Method for making monodisperse silver and silver compound nanocrystals - A method for making monodisperse silver nanocrystals includes the following step: (1) mixing a silver nitrate with octadecyl amine as a solvent, and achieving a mixture; (2) agitating and reacting the mixture at a reaction temperature for a reaction period; (3) cooling the mixture to a cooling temperature, and achieving a deposit; and (4) washing the deposit with an organic solvent, drying the deposit at a drying temperature, and achieving monodisperse silver nanocrystals. After step (2), the method can further include a step of mixing a sulfur or selenium into the reactant to achieve monodisperse silver sulfide or silver selenide nanocrystals. | 11-04-2010 |
| 20110008244 | SYNTHESIS OF METAL CHALCOGENIDE NANOCRYSTALS USING ORGANODICHALCOGENIDE REAGENTS - A method of synthesizing metal chalcogenide nanocrystals involving the steps of combining an organodichalcogenide, a metal salt and a ligand compound to form a mixture; degassing the mixture to remove air and water from the mixture; heating the mixture at a temperature below the decomposition temperature of the organodichalcogenide for a period of time sufficient to form a metal chalcogenide nanocrystal. | 01-13-2011 |
| 20110014115 | SILVER SELENIDE SPUTTERED FILMS AND METHOD AND APPARATUS FOR CONTROLLING DEFECT FORMATION IN SILVER SELENIDE SPUTTERED FILMS - Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm | 01-20-2011 |
| 20110033368 | METHODS OF FORMING A NANOCRYSTAL - Methods of forming a nanocrystal are provided. The nanocrystal may be a binary nanocrystal of general formula M1A or of general formula M1O, a ternary nanocrystal of general formula M1M2A, of general formula M1AB or of general formula M1M2O or a quaternary nanocrystal of general formula M1M2AB. M1 is a metal of Groups II-IV, Group VII or Group VIII of the PSE. A is an element of Group VI or Group V of the PSE. O is oxygen. A homogenous reaction mixture in a non-polar solvent of low boiling point is formed, that includes a metal precursor containing the metal M1 and, where applicable M2. For an oxygen containing nanocrystal the metal precursor contains an oxygen donor. Where applicable, A is also included in the homogenous reaction mixture. The homogenous reaction mixture is under elevated pressure brought to an elevated temperature that is suitable for forming a nanocrystal. | 02-10-2011 |
| 20110070147 | Preparation of Nanoparticle Materials - A method of producing nanoparticles comprises effecting conversion of a nanoparticle precursor composition to the material of the nanoparticles. The precursor composition comprises a first precursor species containing a first ion to be incorporated into the growing nanoparticles and a separate second precursor species containing a second ion to be incorporated into the growing nanoparticles. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticles. | 03-24-2011 |
| 20110104043 | INSTRUMENT AND PROCESS FOR NANOPARTICLES PRODUCTION IN CONTINUOUS FLOW MODE - The subject of the invention is the ( | 05-05-2011 |
| 20110142746 | SYSTEM AND PROCESS FOR CADMIUM TELLURIDE (CdTe) RECLAMATION IN A VAPOR DEPOSITION CONVEYOR ASSEMBLY - A conveyor assembly for use in a vapor deposition apparatus wherein a sublimed source material is deposited as a thin film on a photovoltaic (PV) module substrate. The assembly includes a conveyor movable in an endless loop path that includes an upper leg that moves in a conveyance direction to carry a substrate through a deposition area of the vapor deposition apparatus. A heat source is disposed relative to the endless loop path so as to heat the conveyor at a location generally after the point where substrates leave the conveyor. The heat source heats the conveyor to a temperature effective for sublimating source material from the conveyor. A cold trap is disposed relative to the endless loop path downstream of the heat source in a direction of movement of the conveyor and is maintained at a temperature effective for causing sublimated source material generated from heating the conveyor to plate out onto a collection member configured with the cold trap. An associated process for reclamation of source material from conveyor components is also provided. | 06-16-2011 |
| 20110189080 | Methods of making copper selenium precursor compositions with a targeted copper selenide content and precursor compositions and thin films resulting therefrom - Precursor compositions containing copper and selenium suitable for deposition on a substrate to form thin films suitable for semi-conductor applications. Methods of forming the precursor compositions using primary amine solvents and methods of forming the thin films wherein the selection of temperature and duration of heating controls the formation of a targeted species of copper selenide. | 08-04-2011 |
| 20110223097 | Apparatus and method for manufacturing quantum dot - Disclosed is a technique of producing that a technique of producing quantum dots that are nano-size semiconducting crystals. An apparatus of producing quantum dots includes a mixer to mix different kinds of precursor solutions uniformly in a channel by diverging each precursor solution into a plurality of micro streams and joining the diverging micro streams individually with different kinds of micro streams, and a heating furnace to pass the precursor mixture solution discharged from the mixer therethrough to create and grow quantum dot nucleuses, thus producing quantum dots. The mixer may further include a heating unit allowing temperature adjustment. In addition, a buffer which is maintained at a relatively low-temperature is provided between the mixer and the heating furnace in order to prevent additional nucleation. Accordingly, quantum dots may be produced even at a high flow rate, which leads to mass-production of quantum dots. | 09-15-2011 |
| 20110236297 | HEAT TREATMENT METHOD OF ZNTE SINGLE CRYSTAL SUBSTRATE AND ZNTE SINGLE CRYSTAL SUBSTRATE - The present invention is to provide a heat treatment method for effectively eliminating Te deposits in a ZnTe single crystal substrate, and a ZnTe single crystal substrate having an optical characteristic suitable for use of a light modulation element and having a thickness of 1 mm or more. A heat treatment method of a ZnTe single crystal substrate, includes: a first step of increasing a temperature the ZnTe single crystal substrate to a first heat treatment temperature T | 09-29-2011 |
| 20120034153 | ELECTROLYTIC RECYCLING OF COMPOUNDS - An electrolytic recycling method recovers two or more component elements of one or more compounds simultaneously. A compound, such as a compound semiconductor, to be recycled is dissolved in a liquid electrolyte. Electrolysis of the dissolved compound recovers component elements simultaneously at respective negative and positive electrodes by reduction and oxidation respectively. The component elements produced may be in respective condensed phases or include a gaseous phase. | 02-09-2012 |
| 20120070366 | High-Purity Tellurium Dioxide Single Crystal and Manufacturing Method Thereof - A high-purity tellurium dioxide (TeO | 03-22-2012 |
| 20120164062 | Biosynthesis of Nanoparticles - This invention provides a method of biosynthesizing nanoparticles and quantum dots. The method may comprise culturing photosynthetic cells and/or fungal cells of a multicellular fungus in a culture medium comprising one or more species of metal in ionic or non-ionic form; and one or more counter elements to the one or more species of metal, or one or more compound comprising one or more counter elements to the one or more species of metal; wherein the cells biosynthesize nanoparticles and quantum dots incorporating the metal. The invention also provides biosynthesized nanoparticles and quantum dots. | 06-28-2012 |
| 20120189533 | METHOD FOR MAKING A CHALCOPYRITE-TYPE COMPOUND - A method for making a chalcopyrite-type compound includes reacting a reaction mixture in a solvent under reflux condition to form the chalcopyrite-type compound. The reaction mixture includes at least one first compound and at least one second compound. The first compound contains M | 07-26-2012 |
| 20130236388 | BROAD-EMISSION NANOCRYSTALS AND METHODS OF MAKING AND USING SAME - In one aspect, the invention relates to an inorganic nanoparticle or nanocrystal, also referred to as a quantum dot, capable of emitting white light. In a further aspect, the invention relates to an inorganic nanoparticle capable of absorbing energy from a first electromagnetic region and capable of emitting light in a second electromagnetic region, wherein the second electromagnetic region comprises an at least about 50 nm wide band of wavelengths and to methods for the preparation thereof. In further aspects, the invention relates to a frequency converter, a light emitting diode device, a modified fluorescent light source, an electroluminescent device, and an energy cascade system comprising the nanoparticle of the invention. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention. | 09-12-2013 |
| 20140140918 | METHOD FOR PREPARING SEMICONDUCTOR NANOCRYSTALS - A method for making semiconductor nanocrystals is disclosed, the method comprising adding a secondary phosphine chalcogenide to a solution including a metal source and a liquid medium at a reaction temperature to form a reaction product comprising a semiconductor comprising a metal and a chalcogen, and quenching the reaction mixture to form quantum dots. Methods for overcoating are also disclosed. Semiconductor nanocrystals are also disclosed. | 05-22-2014 |
| 20140147374 | OPTICAL COMPONENT AND METHOD FOR MANUFACTURING SAME - An optical component of the present invention is composed of a ZnSe polycrystal body, and the ZnSe polycrystal body is constituted by crystal grains with an average grain size larger than or equal to 50 μm and smaller than or equal to 1 mm and has a relative density higher than or equal to 99%. | 05-29-2014 |
| 20140241977 | Purification of Nanocrystals for Thermoelectric, Solar, and Electronic Applications - Disclosed herein is a method of purifying and doping a population of semiconductor nanocrystals. The method includes mixing the population of semiconductor nanocrystals having a first material system and a first ligand with a set of particles in the presence of a first solvent, the set of particles having a second material system which is different from the first material system and a second ligand which is different from the first ligand, to form a mixture. The method also includes facilitating a ligand exchange and an ionic exchange in the mixture, altering the first material system of the population of semiconductor nanocrystals to a third material system, different from the first material system and the second material system. The method includes sonicating the mixture and isolating the population of semiconductor nanocrystals having the third material system and the second ligand from the mixture. | 08-28-2014 |
| 20140341799 | RECYCLING OF COPPER INDIUM GALLIUM DISELENIDE - There is provided a method for providing selenium dioxide and a copper indium gallium residue from a material comprising a compound of formula (I) CuIn | 11-20-2014 |
| 20150329359 | SYNTHESIS AND CHARACTERIZATION OF LEAD SELENIDE CAPPED WITH A BENZOATE LIGAND - Semiconductor materials offer several potential benefits as active elements in the development of harvesting-energy conversion technologies. In particular, lead selenide (PbSe) semiconductors have been used and proposed to design solar energy harvesting devices, IR sensors, FET devices, amongst others. The present disclosure provides a simple, low cost synthesis of lead selenide using benzoic acid as the capping ligand in an opened environment. The use of an aromatic ligand, and mores specifically benzoic acid, provides robustness and more durability to the lead selenide, and therefore prevents the lead selenide from breaking or cracking easily. Also the aromatic ligand prevents the degradation and oxidation of the lead selenide, without affecting any of the lead selenide electronic and chemical characteristics. | 11-19-2015 |
| 20150360944 | ELECTRICALLY CONDUCTIVE THIN FILMS - An electrically conductive thin film including a compound represented by Chemical Formula 1 or Chemical Formula 2 and having a layered crystal structure: | 12-17-2015 |
| 20160052786 | HEAT TREATMENT METHOD AND THE PRODUCT PREPARED THEREFROM - The present invention provides a heat treatment method, particularly a heat treatment method in which a protective layer is directly applied onto a precursor to ensure that the precursor on each portion of the substrate is treated based on substantially the same conditions so that the quality of the prepared product layer is improved. The method of the present invention comprises: ( | 02-25-2016 |
| 423510000 | Elemental selenium or tellurium | 6 |
| 20100189634 | PROCESS FOR PRODUCING ELEMENTAL SELENIUM NANOSPHERES - The invention relates to microbiological processes using non-selenium-respiring bacteria for the production of elemental selenium nanospheres having a size in the 50-500 nm range and compositions comprising said nanospheres. The invention further concerns grey elemental selenium nanospheres directly obtainable by the processes of the invention. The compositions and materials of the invention are useful, in particular, as food additives and for use as raw material in the microelectronic and optical industries. | 07-29-2010 |
| 20100329968 | PROCESS FOR THE RECOVERY OF SELENIUM FROM MINERALS AND/OR ACIDIC SOLUTIONS - A process and method for recovering elemental selenium, selenite or selenate from minerals and selenium salts solutions using a reducing sugar to reduce selenium before precipitating the elemental selenium, selenite and/or the selenate. | 12-30-2010 |
| 20100329969 | PROCESS FOR THE RECOVERY OF SELENIUM FROM MINERALS AND/OR ACIDIC SOLUTIONS - A process and method for recovering elemental selenium, selenite or selenate from minerals and selenium salts solutions using a reducing sugar to reduce selenium before precipitating the elemental selenium, selenite and/or the selenate. | 12-30-2010 |
| 20100329970 | METHOD FOR RECOVERY OF COPPER, INDIUM, GALLIUM, AND SELENIUM - A method for the recovery of copper, indium, gallium, and selenium is provided. The method includes steps of using a mixed solution containing a hydrochloric acid and hydrogen peroxide to dissolve the copper, indium, gallium, and selenium. After using the hydrazine to separate the selenium out, the copper is reduced by indium metal. Later, a combination of a supported liquid membrane (SLM) and a strip dispersion solution separates the gallium from the indium. The acid performed in all the steps of the method is hydrochloric acid. Therefore, the copper, indium, gallium, and selenium can be separated one by one in a single production line without changing the solution during the operation process, thereby simplifying the process, shortening the operation time and lowering the manufacture cost. | 12-30-2010 |
| 20140112860 | SEPARATION OF TELLURIUM BY SOLVENT EXTRACTION METHOD - A method for separating tellurium includes separating and recovering tellurium (Te) from a dissolved solution containing the tellurium using a solvent extraction by an extractant, which contains one selected from a group consisting of tributyl phosphate (TBP), tris(2-ethylhexyl) phosphate (TEHP) and a combination thereof. The method may separate and recover the tellurium as a high-priced metallic element from a material, such as a Bi | 04-24-2014 |
| 20160130144 | Method and Process of Treatment of Selenium Containing Material and Selenium Recovery - The method and process of treatment of selenium containing materials, including, but not limited to, different adsorbents, membranes, filters, bioreactor sludge obtained from water treatment, waste electronic devices, material obtained from mineral processing, different industrial wastes, metallurgical wastes, which allow reduction of total selenium content in the material and selenium recovery have been developed. | 05-12-2016 |
