| Entries |
| Document | Title | Date |
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| 20090022647 | Process for Producing a Silicon Nitride Compound - A process for producing a silicon nitride compound is presented. A starting solution comprising fluorosilicic acid is provided. The starting solution is derived from a silicon, etching process wherein silicon is etched with a solution comprising hydrofluoric acid and where silicon powder has been removed. The starting solution is heated to yield a vapor solution comprising silicon tetrafluoride, hydrogen fluoride, and water. The hydrogen fluoride is separated from the vapor solution wherein a pure stream of silicon tetrafluoride and water vapor remain. The silicon tetrafluoride and water vapor are hydrolyzed to yield a concentrated fluorosilicic acid solution. The fluorosilicic acid is reacted with a base to yield a fluorosilicic salt. The fluorosilicic salt is heated to yield anhydrous silicon tetrafluoride. The anhydrous silicon tetrafluoride is reacted with a metal hydride to yield a monosilane. The monosilane is reacted to form a silicon compound and a silicon nitride compound. The silicon and the silicon nitride compounds are recovered. In an alternate embodiment, the hydrogen fluoride is recovered from the reaction process and reintroduced into the porous silicon etching process. | 01-22-2009 |
| 20090087370 | METHOD AND MATERIAL FOR PURIFYING IRON DISILICIDE FOR PHOTOVOLTAIC APPLICATION - A method for processing iron disilicide for manufacture photovoltaic devices. The method includes providing a first sample of iron disilicide comprising at least an alpha phase entity, a beta phase entity, and an epsilon phase entity. The method includes maintaining the first sample of iron disilicide in an inert environment and subjects the first sample of iron disilicide to a thermal process to form a second sample of iron disilicide. The second sample of iron disilicide comprises substantially beta phase iron disilicide and is characterized by a first particle size. The method includes introducing an organic solvent to the second sample of iron disilicide, forming a first mixture of material comprising the second sample of iron disilicide and the organic solvent. The method processed the first mixture of material including the second sample of iron disilicide using a grinding process. The method converted the second sample of iron disilicide having the first particle size to a third sample of iron disilicide having a second particle size. The organic solvent is removed and output a third sample of iron disilicide characterized by the second particle size and greater than about 90% of the beta phase entity. | 04-02-2009 |
| 20100068114 | METHODS FOR PREPARING SILICON GERMANIUM ALLOY NANOCRYSTALS - The present invention relates to a method of preparing silicon germanium alloy nanocrystals by the simultaneous thermal disproportionation of a siliceous material and GeX | 03-18-2010 |
| 20100111805 | CERAMIC NANOWIRES AND A PROCESS FOR PRODUCING THEM BY ION BEAM IRRADIATION - A method by which ceramic nanowires with diameters ranging from several to several tens of nanometers can be synthesized with improvements in the shape retention of the nanowires and the yield of conversion to ceramic, which method comprises the steps of forming a thin film of a silicon-containing polymer usable as a ceramic precursor, irradiating the thin film with ion beams to form cylindrical crosslinked portions, extracting the un-crosslinked portions with a solvent to produce nanowires of the silicon-containing polymer, irradiating the nanowires with an ionizing radiation so that they are crosslinked again, and firing the re-crosslinked nanowires. | 05-06-2010 |
| 20100209328 | METHODS FOR SYNTHESIZING SUBMICRON DOPED SILICON PARTICLES - Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles. | 08-19-2010 |
| 20100215560 | Floating Si and/or Ge Foils - One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T | 08-26-2010 |
| 20100221170 | Iron Silicide Powder and Method for Production Thereof - Provided is iron silicide powder in which the content of oxygen as the gas component is 1500 pppm or less, and a method of manufacturing such iron silicide powder including the steps of reducing iron oxide with hydrogen to prepare iron powder, heating the iron powder and Si powder in a non-oxidizing atmosphere to prepare synthetic powder containing FeSi as its primary component, and adding and mixing Si powder once again thereto and heating this in a non-oxidizing atmosphere to prepare iron silicide powder containing FeSi | 09-02-2010 |
| 20110002833 | THIN FILM OF METAL-SILICON COMPOUND AND PROCESS FOR PRODUCING THE THIN FILM OF THE METAL-SILICON COMPOUND - An object of the present invention is to provide a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound has, as a unit structure, a transition metal-containing silicon cluster in which an energy gap E | 01-06-2011 |
| 20110008237 | Method for manufacturing iron silicide nano-wires - A method for making iron silicide nano-wires comprises the following steps. Firstly, providing an iron object and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the iron object into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C. | 01-13-2011 |
| 20110318250 | RAPID SOLID-STATE METATHESIS ROUTES TO NANOSTRUCTURED SILICON-GERMAINUM - Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI | 12-29-2011 |
| 20120121495 | HIGH TEMPERATURE STABLE NANOCRYSTALLINE SiGe THERMOELECTRIC MATERIAL - A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1,000° C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder. | 05-17-2012 |
| 20120141349 | METHOD FOR PRODUCING HIGH-PURITY SILICON NITRIDE - A method for producing high-purity silicon nitride in two steps is described, wherein a) high-purity silicon is reacted with nitrogen in a rotary tubular furnace comprising a first temperature zone of 1,150 to 1,250° C. and at least one other temperature zone of 1,250 to 1,350° C. in the presence of a gas mixture comprising argon and hydrogen, said reaction proceeding up to a nitrogen content of 10 to 30 wt % and b) allowing the partially nitrogen-containing product from step a) to react in a chamber or settling furnace in a quiescent bed at 1,100 to 1,450° C. with a mixture of nitrogen, argon and optionally hydrogen up to the completion of nitrogen uptake. It is possible, utilizing the method according to the invention, to produce high-purity silicon nitride with a purity of >99.9 in a technically simple manner, wherein no further purification steps, such as leaching with inorganic acids, are required. | 06-07-2012 |
| 20120201734 | SILICIDE COMPOSITIONS CONTAINING ALKALI METALS AND METHODS OF MAKING THE SAME - The invention relates to a method of making alkali metal silicide compositions, and the compositions resulting from the method, comprising mixing an alkali metal with silicon and heating the resulting mixture to a temperature below about 475° C. The resulting compositions do not react with dry O | 08-09-2012 |
| 20120244060 | METHODS FOR SYNTHESIZING SUBMICRON DOPED SILICON PARTICLES - Methods are described that have the capability of producing submicron/nanoscale particles, in some embodiments dispersible, at high production rates. In some embodiments, the methods result in the production of particles with an average diameter less than about 75 nanometers that are produced at a rate of at least about 35 grams per hour. In other embodiments, the particles are highly uniform. These methods can be used to form particle collections and/or powder coatings. Powder coatings and corresponding methods are described based on the deposition of highly uniform submicron/nanoscale particles. | 09-27-2012 |
| 20120275983 | SILICON NITRIDE BASED CRUCIBLE - A reusable silicon nitride containing crucible is described. The crucible contains boron (B) or a boron containing compound and phosphorous (P) or a phosphorous containing compound. Use of the crucible for crystallizing silicon is also described. | 11-01-2012 |
| 20120315208 | CRUCIBLE FOR PHOTOVOLTAICS - A method for producing a workpiece comprising a layer of an additive-free silicon nitride includes providing a base body of the workpiece. A layer of a slip comprising a silicon powder is applied to an inside of the base body so as to obtain a coated base body. The coated base body is subjected to a reactive firing under nitrogen so as to convert the silicon powder to the additive-free silicon nitride. | 12-13-2012 |
| 20130330263 | HYDROGEN PRODUCTION CATALYST CONTAINING Ni3Si-BASED INTERMETALLIC COMPOUND, METHOD FOR ACTIVATING THE CATALYST, AND HYDROGEN PRODUCTION METHOD AND DEVICE USING THE CATALYST - A catalyst according to the present invention exhibits a catalytic action to a methanol decomposition reaction or a hydrocarbon steam-reforming reaction in a short time. The present invention provides a catalyst for producing hydrogen gas, using an Ni | 12-12-2013 |
| 20140065050 | SYSTEMS, METHODS AND COMPOSITIONS FOR THE PRODUCTION OF SILICON NITRIDE NANOSTRUCTURES - Systems, methods and compositions for the production of silicon nitride nanostructures are herein disclosed. In at least one embodiment, a carbon feedstock is preprocessed, combined with a silicon feedstock and annealed in the presence of a nitrogen containing compound to produce a silicon nitride nanostructure. | 03-06-2014 |
| 20150056121 | SILICON NITRIDE POWDER PRODUCTION METHOD, SILICON NITRIDE POWDER, SILICON NITRIDE SINTERED BODY AND CIRCUIT SUBSTRATE USING SAME - A method of producing a silicon nitride powder includes heating an amorphous Si—N(—H)-based compound in which assuming that the specific surface area is RS (m | 02-26-2015 |
| 20150147257 | FLUID CAPTURE OF NANOPARTICLES - A system for preparing nanoparticles is described. The system can include a reactor for producing a nanoparticle aerosol comprising nanoparticles in a gas. The system also includes a diffusion pump that has a chamber with an inlet and an outlet. The inlet of the chamber is in fluid communication with an outlet of the reactor. The diffusion pump also includes a reservoir in fluid communication with the chamber for supporting a diffusion pump fluid and a heater for vaporizing the diffusion pump fluid in the reservoir to a vapor. In addition, the diffusion pump has a jet assembly in fluid communication with the reservoir having a nozzle for discharging the vaporized diffusion pump fluid into the chamber. The system can further include a vacuum pump in fluid communication with the outlet of the chamber. A method of preparing nanoparticles is also provided. | 05-28-2015 |
| 20150344308 | A high temperature reactor and method of producing nanostructures - A method of producing nanostructures by supplying particulate solid and gaseous reactants to a reactor, heating the reactor to an elevated temperature and causing relative movement of the solid reactants such as to promote the growth of nanostructures. A high temperature reactor for performing the method includes a reactor chamber having an inlet and an outlet, multiple drums for accommodating solid reactant material, a drive system that causes rotation of the drums and a heating system for heating the chamber. | 12-03-2015 |
| 20160176716 | FORM OF SILICON AND METHOD OF MAKING THE SAME | 06-23-2016 |
| 20160251224 | SILICON NITRIDE FILM, PRODUCTION METHOD THEREFOR, AND PRODUCTION DEVICE THEREFOR | 09-01-2016 |
