| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 423289000 | Binary compound (e.g., boride, etc.) | 60 |
| 20100215559 | Method for manufacturing extremly pure amorphous boron, in particular for use in MgB2 superconductors - A method for producing extremely pure amorphous boron, wherein a reducing gas and a gaseous boron halide are introduced continuously or quasi-continuously into a reaction chamber ( | 08-26-2010 |
| 20110176983 | METHOD FOR PURIFYING ELEMENTAL BORON - Elemental boron with a boron content of at least 96.8% by weight, an oxygen content of at most 1.6% by weight, a nitrogen content of at most 0.2% by weight, a crystallinity of 30% by weight or less, and a particle size distribution with a d100 value of 9 μm or less. | 07-21-2011 |
| 20120171098 | METHOD OF CONSOLIDATING ULTRAFINE METAL CARBIDE AND METAL BORIDE PARTICLES AND PRODUCTS MADE THEREFROM - Ultrafine metal carbide or metal boride particles are consolidated by a method including sintering at intermediate pressures. A green body comprising the ultrafine metal carbide or metal boride particles may be preheated under vacuum and then pressurized to the intermediate sintering pressure. After sintering, the article may be densified at an intermediate temperature below the sintering temperature, and at an elevated pressure above the intermediate sintering temperature. The resultant consolidated metal carbide or metal boride article may then be cooled and used for such applications as armor panels, abrasion resistant nozzles, and the like. | 07-05-2012 |
| 20130017137 | LANTHANUM HEXABORIDE SINTERED BODY, TARGET AND LANTHANUM HEXABORIDE FILM EACH COMPRISING SAME, AND PROCESS FOR PRODUCTION OF THE SINTERED BODYAANM Takahashi; KentaroAACI ChibaAACO JPAAGP Takahashi; Kentaro Chiba JPAANM Andou; KazutoAACI ChibaAACO JPAAGP Andou; Kazuto Chiba JP - Disclosed are: a lanthanum hexaboride sintered body which contains lanthanum hexaboride as the main component, has an element nitrogen content of 0.1 to 3 mass % inclusive, contains an impurity composed of element carbon and/or at least two elements selected from La, C, O and B at a content of 0.3 vol % or less, and has a relative density of 88% or more; and a target comprising the lanthanum hexaboride sintered body. An LaB | 01-17-2013 |
| 20130052114 | METHOD FOR REMOVING CONTAMINANTS FROM BORON POWDER - Methods for removing an organic contaminant from contaminated boron powder are provided. One method includes providing a contaminated boron powder, the boron powder being comingled with an organic contaminant. The method also includes placing the contaminated boron powder and the organic contaminant comingled therewith onto an inert container. The method includes placing the inert container, the contaminated boron powder, and the organic contaminant comingled therewith, into an enclosed space. A heat source is provided in the enclosed space. The method also includes heating the contaminated boron powder and the organic contaminant comingled therewith to an elevated temperature. The method includes altering the organic contaminant so as to reduce the amount of the organic contaminant comingled with the boron powder. Another method includes reducing the amount of the organic contaminant comingled with the boron powder to not more than about 0.1 weight percent of soluble residue. | 02-28-2013 |
| 20140199226 | MECHANOCHEMICAL SYNTHESIS OF HEXAGONAL OsB2 - The presently disclosed and/or claimed inventive concept(s) relates generally to hexagonal osmium boride, OsB | 07-17-2014 |
| 20140219902 | MECHANOCHEMICAL SYNTHESIS OF HEXAGONAL OsB2 - The presently disclosed and/or claimed inventive concept(s) relates generally to hexagonal osmium boride, OsB | 08-07-2014 |
| 20220135412 | LOW-TEMPERATURE FORMATION OF GROUP 13-15 CERAMICS AND GROUP 13-15-16 CERAMICS - Methods of making a ceramic of a Group 13-15 type or a Group 13-15-16 type by thermolyzing a discrete molecular precursor to the ceramic in an oxygen-containing atmosphere. In some embodiments, the discrete molecular precursor is bench-stable and comprises a Lewis acid-base pair or small cyclic compound containing at last one Group 13 element and at least one Group 15 element but does not include indium and phosphorus in combination with one another unless a Group 16 element is present. The thermolysis can be carried out in air, at atmospheric pressure, and at a temperature below about 400° C., if desired. In some embodiments, the discrete molecular precursor can be placed in a mold having a desired shape and the thermolysis performed while the discrete molecular precursor is in the mold so as to produce a ceramic product having the desired shape. | 05-05-2022 |
| 423290000 | Nitrogen containing | 19 |
| 20090117021 | Boron Nitride Nanotubes - Boron nitride nanotubes are prepared by a process which includes:
| 05-07-2009 |
| 20090297422 | Machining nanometer-sized tips from multi-walled nanotubes - The invention provides sharpened multi-walled nanotubes and methods for sharpening multi-walled nanotubes. The methods of the invention use an electron beam to machine the multi-walled nanotube to the desired dimensions. The invention provides sharpened boron nitride nanotubes where the radius of the end of the sharpened tip is less than about 10 nm. | 12-03-2009 |
| 20120003136 | Proppants With Carbide And/Or Nitride Phases - The present invention relates to proppants which can be used to prop open subterranean formation fractions. Proppant formulations are further disclosed which use one or more proppants of the present invention. Methods to prop open subterranean formation fractions are further disclosed. In addition, other uses for the proppants of the present invention are further disclosed, as well as methods of making the proppants. | 01-05-2012 |
| 20120063983 | Method for Synthesis of Boron Nitride Nanopowder - A reaction is carried in a gaseous phase between ammonia (NH | 03-15-2012 |
| 20120070357 | METHOD FOR THE PREPARATION OF BORON NITRIDE POWDER - This invention is directed to a process for the preparation of boron nitride powder, particularly a fine powder with a low degree of contamination, which demonstrates good caking, heat conductivity and dielectric properties. Specifically, a process for the preparation of amorphous boron nitride (a-BN) is provided wherein the process comprises: mixing powders of boric acid and a carbamide at a temperature in the range of about 250-300° C., thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and heating of the materials formed in step (a) to a temperature in the range of about 500-600° C., thereby forming a powder of a-BN. | 03-22-2012 |
| 20120141348 | PROCESS FOR PRODUCTION OF SPHEROIDIZED BORON NITRIDE - Disclosed is a process for producing spheroidized boron nitride which enable the further improvement in the heat conductivity of a heat dissipative member. Specifically disclosed is a process for producing spheroidized boron nitride, which is characterized by using spheroidized graphite as a raw material and reacting the spheroidized graphite with a boron oxide and nitrogen at a high temperature ranging from 1600 to 2100° C. to produce the spheroidized boron nitride. The boron oxide to be used in the reaction is preferably boron oxide (B2O3), boric acid (H3BO3), or a substance capable of generating a boron oxide at a higher temperature. A gas to be used in the reaction is preferably nitrogen or ammonia. | 06-07-2012 |
| 20130011317 | METHOD FOR THE PREPARATION OF BORON NITRIDE POWDER - This invention is directed to a process for the preparation of boron nitride powder, particularly a fine powder with a low degree of contamination, which demonstrates good caking, heat conductivity and dielectric properties. Specifically, a process for the preparation of amorphous boron nitride (a-BN) is provided wherein the process comprises: mixing powders of boric acid and a carbamide at a temperature in the range of about 250-300° C., thereby forming: ammonium polyborates; boron imide or a mixture thereof and ammonia; and heating of the materials formed in step (a) to a temperature in the range of about 500-600° C., thereby forming a powder of a-BN. | 01-10-2013 |
| 20130064749 | GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE - A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region. | 03-14-2013 |
| 20130064750 | METHOD AND DEVICE TO SYNTHESIZE BORON NITRIDE NANOTUBES AND RELATED NANOPARTICLES - Methods and apparatus for producing chemical nanostructures having multiple elements, such as boron and nitride, e.g. boron nitride nanotubes, are disclosed. The method comprises creating a plasma jet, or plume, such as by an arc discharge. The plasma plume is elongated and has a temperature gradient along its length. It extends along its length into a port connector area having ports for introduction of feed materials. The feed materials include the multiple elements, which are introduced separately as fluids or powders at multiple ports along the length of the plasma plume, said ports entering the plasma plume at different temperatures. The method further comprises modifying a temperature at a distal portion of or immediately downstream of said plasma plume; and collecting said chemical nanostructures after said modifying. | 03-14-2013 |
| 20130129594 | PROCESS FOR MANUFACTURING A NANOMETRIC CAGE AND ASSOCIATED CAGE - A method for manufacturing a nanoscale cage of a material suitable for forming a molecular layer, including a step of shaping and packaging an object in the general shape of a revolving cylinder, the shaping and packaging step being adapted according to the position of the value of the diameter of the revolving cylinder relative to a threshold below which a folding of the ends of the cylinder is promoted. | 05-23-2013 |
| 20130243680 | GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL SUBSTRATE - A group 13 nitride crystal has a hexagonal crystal structure containing a nitrogen atom and at least one type of metal atom selected from the group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal has a basal plane dislocation in a plurality of directions. Dislocation density of the basal plane dislocation is higher than dislocation density of a threading dislocation of a c-plane. | 09-19-2013 |
| 20130323150 | METHOD OF FORMING HIGH-QUALITY HEXAGONAL BORON NITRIDE NANOSHEET USING MULTI COMPONENT EUTECTIC POINT SYSTEM - Provided is a method of manufacturing a hexagonal boron nitride nanosheet to mass-produce a high-quality hexagonal boron nitride nanosheet at a low temperature in a safe process. | 12-05-2013 |
| 20140255286 | METHOD FOR MANUFACTURING CUBIC BORON NITRIDE THIN FILM WITH REDUCED COMPRESSIVE RESIDUAL STRESS AND CUBIC BORON NITRIDE THIN FILM MANUFACTURED USING THE SAME - A method for manufacturing a cubic boron nitride (c-BN) thin film includes: applying a pulse-type bias voltage to a substrate; and forming the cubic boron nitride thin film by bombarding the substrate with ions using the pulse-type bias voltage. To control the compressive residual stress of the cubic boron nitride thin film, ON/OFF time ratio of the pulse-type bias voltage may be controlled. The compressive residual stress that is applied to the thin film can be minimized by using the pulse-type voltage as a negative bias voltage applied to the substrate. In addition, the deposition of the c-BN thin film can be performed in a low ion energy region by increasing the ion/neutral particle flux ratio through the control of the ON/OFF time ratio of the pulse-type voltage. | 09-11-2014 |
| 20140314652 | PROCESS FOR CONTINUOUS PRODUCTION OF BORON NITRIDE POWDER - The present invention provides a process for continuously producing crystalline hexagonal boron nitride powder having a large particle size and high crystalline. The present invention relates to a process comprising: the first step of heating a boron-containing material and a nitrogen-containing material to obtain crude boron nitride powder having boron nitride content of 80% by weight or higher, and the second step of feeding the crude boron nitride powder and a boron-containing flux component in the content satisfying the following formula (1) with a heat-resistant container, and heating the container including the crude boron nitride powder and the boron-containing flux component at 1550 to 2400° C. in a continuous furnace under the atmosphere of nitrogen gas, to grow hexagonal boron nitride in the form of crystal: formula (1): boron content contained in boron-containing flux component/crude boron nitride content ≦1.4 % by weight. | 10-23-2014 |
| 20150086460 | METHOD FOR PRODUCING HEXAGONAL BORON NITRIDE FILM USING BORAZINE OLIGOMER AS A PRECURSOR - Provided is a method for producing a high-quality boron nitride film grown by using a borazine oligomer as a precursor through a metal catalyst effect. The method solves the problems, such as control of a gaseous precursor and vapor pressure control, occurring in CVD(Chemical vapor deposition) according to the related art, and a high-quality hexagonal boron nitride film is obtained through a simple process at low cost. In addition, the hexagonal boron nitride film may be coated onto various structures and materials. Further, selective coating is allowed so as to carry out coating in a predetermined area and scale-up is also allowed. Therefore, the method may be useful for coating applications of composite materials and various materials. | 03-26-2015 |
| 20150125374 | INDUCTION-COUPLED PLASMA SYNTHESIS OF BORON NITRIDE NANOTUBES - Described herein are processes and apparatus for the large-scale synthesis of boron nitride nanotubes (BNNTs) by induction-coupled plasma (ICP). A boron-containing feedstock may be heated by ICP in the presence of nitrogen gas at an elevated pressure, to form vaporized boron. The vaporized boron may be cooled to form boron droplets, such as nanodroplets. Cooling may take place using a condenser, for example. BNNTs may then form downstream and can be harvested. | 05-07-2015 |
| 20150329965 | METHODS OF LOW TEMPERATURE DEPOSITION OF CERAMIC THIN FILMS - A method is provided for low temperature deposition of ceramic thin films of carbides, nitrides and mixed phases such as carbo-nitrides by atomic layer deposition (ALD), nano-layer deposition (NLD), and chemical vapor deposition (CVD). The deposition chemistries employ combinations of precursors to affect thin film processes at substantially lower temperatures than current deposition processes of thin films of boron (B) carbides, nitrogen (N), nitrides, carbonitrides of silicon (Si), carbon (C), germanium (Ge), phosphorus (P), arsenic (As), oxygen (O), sulfur (S), and selenium (S) on substrates. The inventive ALD and corresponding NLD and CVD process methods provide lower temperature deposition of various thin films comprising elements from the group B, C, Si, Ge, N, P, As and O, S and Se. The reactive precursor combinations are selected on the basis of reactivity towards one another as determined by the variation of Gibb's free energy (ΔG) with respect to deposition temperature. | 11-19-2015 |
| 20160016796 | Sorting Two-Dimensional Nanomaterials by Thickness - The present teachings provide, in part, methods of separating two-dimensional nanomaterials by atomic layer thickness. In certain embodiments, the present teachings provide methods of generating boron nitride nanomaterials having a controlled number of atomic layer(s). | 01-21-2016 |
| 20160145101 | A PRODUCTION METHOD FOR THE BORON NITRIDE NANOTUBES - The present invention relates to a method, which essentially comprises the steps of performing crude boron nitride nanotube (BNNT) synthesis ( | 05-26-2016 |
| 423291000 | Carbon containing | 9 |
| 20080279747 | Process for Manufacturing High Density Boron Carbide - A process for manufacturing high density boron carbide by pressureless sintering, enabling to create sintered products of complex shapes and high strength. The process comprises mixing raw boron carbide powder with carbon precursor, such as a polysaccharide, compacting the mixture to create an object of the desired shape, and finally carbonizing and sintering the object at higher temperatures. | 11-13-2008 |
| 20100003180 | PRODUCTION OF ULTRAFINE BORON CARBIDE PARTICLES UTILIZING LIQUID FEED MATERIALS - The production of ultrafine boron carbide powders from liquid boron-containing precursors and/or liquid carbon-containing precursors is disclosed. The liquid precursors are fed together or separately to a plasma system where the precursor materials react to form boron carbide in the form of ultrafine particles. | 01-07-2010 |
| 20100055017 | METHODS FOR THE PRODUCTION OF ULTRAFINE METAL CARBIDE PARTICLES AND HYDROGEN - A method for producing ultrafine metal carbide particles and hydrogen is disclosed. The method includes introducing a metal-containing precursor and a carbon-containing precursor into a thermal reaction chamber, heating the precursors in the thermal reaction chamber to form the ultrafine metal carbide particles from the precursors and to form carbon monoxide and hydrogen, collecting the ultrafine doped metal carbide particles, converting at least a portion of the carbon monoxide to carbon dioxide and generating additional hydrogen, and recovering at least a portion of the hydrogen. | 03-04-2010 |
| 20110171096 | High Throughput Synthesis of Carbide Nanostructures from Natural Biological Materials - Methods of forming one-dimensional carbide nanostructures are provided. In one embodiment, a carbide forming mixture (e.g., including a noncarbon element source, a catalyst, and a solvent) is applied to a porous plant template (e.g., cotton fibers, bamboo fibers, wood fibers, leaf fibers, straw fibers, or mixtures thereof). The porous plant template can then be dried to evaporate the solvent, and heated to a growth temperature of about 1000° C. or more (e.g., about 1050° C. to about 1300° C.) to grow the one-dimensional carbide nanostructures on the porous plant template. | 07-14-2011 |
| 20120058037 | BORON CARBIDE AND METHOD FOR MAKING SAME - The invention relates to boron carbide and to a method for making the same, as well as to a super-abrasive material and a machine device including said boron carbide. The boron carbide of the invention has the following formula BC5 and has a diamond-type cubic structure with a mesh parameter a=3.635±0.006 Å. The boron carbide of the invention can particularly be used in the field of machining. | 03-08-2012 |
| 20120107211 | PROCESS FOR MANUFACTURING HIGH DENSITY BORON CARBIDE - A process for manufacturing high density boron carbide by pressureless sintering, enabling to create sintered products of complex shapes and high strength. The process comprises mixing raw boron carbide powder with carbon precursor, such as a polysaccharide, compacting the mixture to create an object of the desired shape, and finally carbonizing and sintering the object at higher temperatures. | 05-03-2012 |
| 20120107212 | METHOD AND APPARATUS FOR TREATING DIAMOND USING LIQUID METAL SATURATED WITH CARBON - A method of treating a diamond, the method comprising: (i) providing a liquid metal saturated with carbon with respect to graphite precipitation; (ii) lowering the temperature of the liquid metal such that the liquid metal is saturated with carbon with respect to diamond precipitation; (iii) immersing a diamond in the liquid metal; and (iv) removing the diamond from the metal. | 05-03-2012 |
| 20120128565 | BORON CARBON NANORODS - Described are boron carbide nanorods that have a molar ratio of 8:1 boron to carbon. | 05-24-2012 |
| 20140056795 | PROCESS FOR MANUFACTURING HIGH DENSITY BORON CARBIDE - The invention provides a process for manufacturing high density boron carbide by pressureless sintering, enabling to create sintered products of complex shapes and high strength. The robust process of the invention enables to employ low-cost raw powders. | 02-27-2014 |
| 423292000 | Halogen containing | 6 |
| 20160167038 | SEPARATION OF CONJUNCT POLYMER FROM VOLATILE REGENERANT FOR IONIC LIQUID REGENERATION | 06-16-2016 |
| 423293000 | Fluorine | 5 |
| 20100322837 | Gas Storage and Release Using Piezoelectric Materials - Embodiments are described that generally relate to the storage and release of a gas using piezoelectric materials. | 12-23-2010 |
| 20110135555 | PROCESS FOR PRODUCING FLUORIDE GAS - Disclosed is a process for producing a fluoride gas that can produces fluoride gases such as BF | 06-09-2011 |
| 20120009111 | ENERGY GENERATION PROCESS - High energy reaction of halogen-containing carbon, boron, silicon and nitrogen compounds, with base component comprising at least one atom selected from Groups IA to VIA, transition metals, lanthanides and actinides of the Periodic Table of the Elements, excluding aluminum and aluminum oxide. | 01-12-2012 |
| 20140294711 | METHOD OF RECYCLING HYDROCHLORIC AND HYDROFLUORIC ACID EFFLUENT - A method of recycling mixtures of hydrochloric and hydrofluoric acid. In particular, a method of recycling hydrofluoric acid and boron fluoride mixtures. A process for upgrading mixtures of fluoroboron compounds contaminated with chlorides as an aqueous solution of boron fluoride hydrates, including a step of vacuum distillation. Also, a method of producing gaseous boron trifluoride. | 10-02-2014 |
| 20140301932 | B2F4 MANUFACTURING PROCESS - A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B | 10-09-2014 |
| 423294000 | Hydrogen containing | 7 |
| 20080305026 | METHOD FOR PRODUCING A BOROHYDRIDE - A method for producing a borohydride is described and which includes the steps of providing a source of borate; providing a material which chemically reduces the source of the borate to produce a borohydride; and reacting the source of borate and the material by supplying heat at a temperature which substantially effects the production of the borohydride. | 12-11-2008 |
| 20090317317 | Fluid Storage and Purification Method and System - A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel. | 12-24-2009 |
| 20110165053 | METHODS OF PREPARING CLUSTERBORON - The invention provides new methods for synthesis of ClusterBoron® (B | 07-07-2011 |
| 20110195009 | METHODS OF PREPARING CLUSTERBORON - The invention provides new methods for synthesis of ClusterBoron (B | 08-11-2011 |
| 20110217223 | ISOTOPICALLY-ENRICHED BORANES AND METHODS OF PREPARING THEM - The invention provides new methods for synthesis of large boron hydride clusters, e.g., boron hydride molecules of the formula B | 09-08-2011 |
| 423295000 | By reacting metal hydride or organic derivative thereof | 2 |
| 20090297423 | ENERGY EFFICIENT SYNTHESIS OF BORANES - The reaction of halo-boron compounds (B—X compounds, compounds having one or more boron-halogen bonds) with silanes provides boranes (B—H compounds, compounds having one or more B—H bonds) and halosilanes. Inorganic hydrides, such as surface-bound silane hydrides (Si—H) react with B—X compounds to form B—H compounds and surface-bound halosilanes. The surface bound halosilanes are converted back to surface-bound silanes electrochemically. Halo-boron compounds react with stannanes (tin compounds having a Sn—H bond) to form boranes and halostannanes (tin compounds having a Sn—X bond). The halostannanes are converted back to stannanes electrochemically or by the thermolysis of Sn-formate compounds. When the halo-boron compound is BCl | 12-03-2009 |
| 20130236384 | METHODS OF PREPARING CLUSTERBORON - New methods are provided for synthesis of ClusterBoron® (B | 09-12-2013 |
| 423297000 | Refractory metal containing (Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, or W) | 11 |
| 20080233032 | METHOD FOR MANUFACTURING TRANSITION METAL BORIDE POWDER - The present invention relates to a method for manufacturing a transition metal boride powder. The method for manufacturing a transition metal boride powder includes: i) manufacturing a mixed powder by mixing a transition metal halogenide powder and an alkali metal borohydride powder; ii) charging the mixed powder and a plurality of balls into a reaction vessel; iii) charging an inert gas into the reaction vessel and sealing the reaction vessel; iv) high energy ball milling the mixed powder and manufacturing a composite powder containing a transition metal boride and an alkali metal halogenide; v) washing the composite powder in water, dissolving the alkali metal halogenide in the water and filtering the transition metal borides; and vi) drying the filtered transition metal boride and collecting the transition metal boride powder. | 09-25-2008 |
| 20110104033 | METHODS OF MAKING TITANIUM DIBORIDE POWDERS - The present disclosure is directed towards methods of making titanium diboride products in various sizes. An aspect of the method provides (a) selecting a target average particle size for a target titanium diboride product; (b) selecting at least one processing variable from the group consisting of: an amount of sulfur, an inert gas flow rate, a soak time, and a reaction temperature; (c) selecting a condition of the processing variable based upon the target average particle size; and (d) producing an actual titanium diboride product having an actual average particle size using the at least one processing variable, wherein due to the at least one processing variable, the actual average particle size corresponds to the target average particle size. | 05-05-2011 |
| 20120244057 | METHODS OF MAKING TITANIUM DIBORIDE POWDERS - The present disclosure is directed towards methods of making titanium diboride products in various sizes. An aspect of the method provides (a) selecting a target average particle size for a target titanium diboride product; (b) selecting at least one processing variable from the group consisting of: an amount of sulfur, an inert gas flow rate, a soak time, and a reaction temperature; (c) selecting a condition of the processing variable based upon the target average particle size; and (d) producing an actual titanium diboride product having an actual average particle size using the at least one processing variable, wherein due to the at least one processing variable, the actual average particle size corresponds to the target average particle size. | 09-27-2012 |
| 20120315207 | SYNTHESIS OF METAL BORIDES - Methods for the synthesis of metal borides. Metal boride compounds synthesized by those methods are also disclosed. | 12-13-2012 |
| 20130004401 | DEVICE AND METHOD FOR PRODUCING A TUBULAR REFRACTORY METAL COMPOUND STRUCTURE - The disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound. In particular, the disclosure provides a device and method used to produce a tubular structure made of a refractory metal compound by reacting a green tubular structure made of a refractory metal with at least one reactive gas. | 01-03-2013 |
| 20130095020 | CYCLIC PREPARATION METHOD FOR PRODUCING TITANIUM BORIDE FROM INTERMEDIATE FEEDSTOCK SODIUM-BASED TITANIUM-BORON-FLUORINE SALT MIXTURE AND PRODUCING SODIUM CRYOLITE AS BYPRODUCT - A cyclic preparation method for producing titanium boride from intermediate feedstock sodium-based titanium-boron-fluorine salt mixture and producing sodium cryolite as byproduct, which comprises the steps: a) boric acid or boric anhydride is added with hydrofluoric acid and then with sodium carbonate solution for concentration and crystallization to generate sodium fluoborate; titanium-iron concentrate is added with hydrofluoric acid and then with sodium carbonate and sodium hydroxide to obtain sodium fluotitanate; B) the sodium fluoborate is mixed with the sodium fluotitanate, and the mixture reacts with aluminum to generate titanium boride and sodium cryolite; C) the sodium cryolite is sucked out and then fed into a rotary reaction kettle together with concentrated sulfuric acid, hydrogen fluoride gas as well as sodium sulfate and sodium aluminum sulfate are generated by reaction in the rotary reaction kettle, and the hydrogen fluoride gas is collected and then dissolved in water to obtain hydrofluoric acid aqueous solution; and D) the obtained hydrofluoric acid aqueous solution is recycled. | 04-18-2013 |
| 20130095021 | CYCLIC PREPARATION METHOD FOR PRODUCING TITANIUM BORIDE FROM INTERMEDIATE FEEDSTOCK POTASSIUM-BASED TITANIUM-BORON-FLUORINE SALT MIXTURE AND PRODUCING POTASSIUM CRYOLITE AS BYPRODUCT - A cyclic preparation method including the following steps: a) boric acid or boric anhydride is added with hydrofluoric acid and then with potassium sulfate for reaction to generate potassium fluoborate; titanium-iron concentrate is added with hydrofluoric acid and then with potassium sulfate for reaction to generate potassium fluotitanate; B) the potassium fluoborate is mixed with the potassium fluotitanate, and the mixture reacts with aluminum to generate titanium boride and potassium cryolite; C) the potassium cryolite is sucked out and then fed into a rotary reaction kettle together with concentrated sulfuric acid, hydrogen fluoride gas as well as potassium sulfate and potassium aluminum sulfate are generated by reaction in the rotary reaction kettle, and the hydrogen fluoride gas is collected and then dissolved in water to obtain hydrofluoric acid aqueous solution; and D) the obtained hydrofluoric acid aqueous solution and potassium sulfate aqueous solution are recycled. | 04-18-2013 |
| 20130095022 | PREPARATION PROCESS OF TRANSITION METAL BORIDE AND USES THEREOF - The invention provides a preparation process of transition metal boride, comprising the following steps: A) aluminum is put in a reactor, inert gas is fed into the reactor after evacuation, the reactor is heated up to 700 to 800° C. and then added with dry potassium fluoborate or sodium fluoborate, monomer boron and cryolite are generated by rapid stirring and reaction for 4 to 6 hours, and the molten liquid at the upper layer is sucked out and the monomer boron is obtained by means of separation; and B) the obtained monomer boron is added with transition metal for reaction at the temperature from 1800 to 2200° C. in order to generate corresponding transition metal boride. | 04-18-2013 |
| 20140134090 | PREPARATION PROCESS OF TRANSITION METAL BORIDE AND USES THEREOF - The invention provides a preparation process of transition metal boride, comprising the following steps: A) aluminum is put in a reactor, inert gas is fed into the reactor after evacuation, the reactor is heated up to 700 to 800° C. and then added with dry potassium fluoborate or sodium fluoborate, monomer boron and cryolite are generated by rapid stirring and reaction for 4 to 6 hours, and the molten liquid at the upper layer is sucked out and the monomer boron is obtained by means of separation; and B) the obtained monomer boron is added with transition metal for reaction at the temperature from 1800 to 2200° C. in order to generate corresponding transition metal boride. | 05-15-2014 |
| 20140147364 | Sonochemical Synthesis of Boron and Boron-Carbon Nanomaterials by Alkali Metal Reduction - A method of preparing a nanomaterial comprising boron includes sonicating a boron trihalide and/or boron alkoxide in a hydrocarbon solvent with an alkali metal under an inert atmosphere to form a dark solid, and annealing the dark solid at a temperature sufficient to sublime alkali metal salt therein, thereby obtaining a boron nanomaterial. Reacting with a Group IVB metal produces a metal boride, and combining an alkali metal salt of a hydrocarbon with the boron trihalide prior to sonicating produces a carbonaceous boron material. | 05-29-2014 |
| 20160052792 | METHOD FOR PRODUCING A FIELD GRADING MATERIAL WITH TAILORED PROPERTIES - The present disclosure relates to a novel method for producing a field grading powder, to novel field grading powder and their uses and method of uses. The method for producing the field grading powder with semi-conductor properties comprises the steps of i) ball milling under high energy a metal powder and a boron compound for creating an homogenous powder, ii) firing the homogenous powder at a temperature and a time sufficient to create a metal boride powder, and iii) cooling down the metal boride powder from step b) for obtaining a field grading powder having semi-conductor properties. | 02-25-2016 |
