| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 392418000 | With support for workpiece | 30 |
| 20080226272 | HEATING APPARATUS, HEAT TREATMENT APPARATUS, COMPUTER PROGRAM AND STORAGE MEDIUM - A heating apparatus for heating a target object W is provided with a plurality of heating light sources, including LED elements for applying heating light having a wavelength within a range from 360 to 520 nm to the object. Thus, a temperature of only the shallow surface of the object, such as a semiconductor wafer, is increased/reduced at a high speed in uniform temperature distribution, irrespective of the film type. | 09-18-2008 |
| 20090067823 | HEAT TREATMENT APPARATUS HEATING SUBSTRATE BY IRRADIATION WITH LIGHT - A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer. | 03-12-2009 |
| 20090103906 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY IRRADIATION THEREOF WITH LIGHT - A semiconductor wafer preheated to a preheating temperature is irradiated with light from flash lamps. With the light emission from the flash lamps, a surface temperature of the semiconductor wafer is maintained at a recovery temperature during a period of 10 to 100 milliseconds to induce recovery of defects created in silicon crystals. Then, with subsequent flashing light emission from the flash lamps, the surface temperature of the semiconductor wafer will reach a processing temperature to induce activation of impurities. Increasing the surface temperature of the semiconductor wafer once to the recovery temperature and then, with the flashing light emission, to the processing temperature will also prevent cracking of the semiconductor wafer. | 04-23-2009 |
| 20090123140 | SUBSTRATE STAGE MECHANISM AND SUBSTRATE PROCESSING APPARATUS - A substrate stage mechanism ( | 05-14-2009 |
| 20090175606 | METHOD AND STRUCTURE TO CONTROL THERMAL GRADIENTS IN SEMICONDUCTOR WAFERS DURING RAPID THERMAL PROCESSING - An article supports a workpiece during thermal processing. At least three elongated support members, e.g., support pins, extend upwardly from an element such as support arms for supporting the workpiece. Each of the support members includes a first portion adjacent to the workpiece. A second portion extends downwardly from the first portion. The first portion can have a thermal response faster than the thermal response of the workpiece and the second portion can have a slower thermal response. A removable element may be mounted to the support member for adjusting the thermal response of the support member. With removable elements, the support members can be adjusted to cause no net transfer of heat to or from the workpiece. | 07-09-2009 |
| 20090263112 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION - In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature. | 10-22-2009 |
| 20090285568 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY PHOTO-IRRADIATION - In photo-irradiation heating with a total photo-irradiation time of one second or less, after initial photo-irradiation of a semiconductor wafer is performed while increasing an emission output to a target value, succeeding photo-irradiation of the semiconductor wafer is performed while maintaining the emission output within a range of plus or minus 20% from the target value. The photo-irradiation time for the initial photo-irradiation ranges from 0.1 to 10 milliseconds, and the photo-irradiation time for the succeeding photo-irradiation ranges from 5 milliseconds to less than one second. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature, thus achieving both the activation of implanted ions and the repair of introduced defects without any thermal damage to the semiconductor wafer. | 11-19-2009 |
| 20090304371 | MIcro-heaters, methods for manufacturing the same, and methods for forming patterns using the micro-heaters - Example embodiments relate to micro-heaters, micro-heater arrays, methods for manufacturing the micro-heater, and methods for forming a pattern using the micro-heater. A micro-heater according to example embodiments may include a metal pattern formed on a substrate. A support may be formed beneath the metal pattern, the support securing the metal pattern to the substrate while spacing the metal pattern apart from the substrate. A spacer may be formed on the substrate and adjacent to the metal pattern, a first distance from the substrate to the top surface of the spacer being greater than a second distance from the substrate to the top surface of the metal pattern. The distance between the micro-heater and a target substrate positioned above the metal pattern may be controlled by the spacer, thus allowing the formation of a relatively fine pattern on the target substrate. | 12-10-2009 |
| 20100003021 | Systems and methods for curing deposited material using feedback control - Methods and systems are provided for optimally curing a deposited curable material film using a light source and feedback system for monitoring the degree of curing using detected optical properties of the film. Operational parameters of the light source (e.g., power) are adjusted by a control system in response to the detected optical properties of the film. The curing system includes at least one light source in optical communication with an uncured material, a detector for monitoring an optical property of the curing material, and a feedback system for controlling the light emitted from the light source in response to the detector. | 01-07-2010 |
| 20100111513 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY PHOTO-IRRADIATION - Two-step photo-irradiation heat treatment is performed so that a total photo-irradiation time is not more than one second and that a first step of photo-irradiation of a semiconductor wafer is performed with a light-emission output that averages out at a first light-emission output and a second step of photo-irradiation of the semiconductor wafer is performed in accordance with an output waveform that peaks at a second light-emission output that is higher than both average and maximum light-emission outputs in the first step. Performing preliminary photo-irradiation with a relatively low light-emission output in the first step and then performing intense photo-irradiation with a higher peak in the second step enables the surface temperature of a semiconductor wafer to increase further with a smaller amount of energy than in conventional cases, while preventing the semiconductor wafer from shattering. | 05-06-2010 |
| 20100209083 | INFRARED RADIATION COOKER - Provided is an infrared radiation cooker in which heat from an infrared lamp is directly applied onto food being grilled, to thus cook the upper and inner parts of the food, as well as onto a rotating pan, to thus simultaneously cook the lower part of the food. As a result, the food cooks evenly throughout without burning or creating residual odors from above to below as well as from outer to inner, and further the rotating pan of respectively different structures can be selected depending on an intended cooking purpose, to thereby adjust height of the rotating pan, which changes a heat intensity, to thus vary a cooking style, and which can be used to boil, grill or roast foods as one would like. | 08-19-2010 |
| 20100322603 | SUBSTRATE ROTATING AND OSCILLATING APPARATUS FOR RAPID THERMAL PROCESS - Disclosed is a substrate rotating and oscillating apparatus for a rapid thermal process (RTP), that oscillates an oscillation plate using an oscillation motor moved by an elevating unit. Rotational shafts of the oscillation motor comprise lower and upper center rotational shafts mounted on a central axis of the motor, and an eccentric shaft mounted between the lower and the upper center rotational shafts as deviated from the central axis. An oscillation cam is mounted to the eccentric cam. The oscillation plate has an oscillation hole for inserting the oscillation cam therein. A bearing is mounted between the oscillation cam and the eccentric shaft such that the oscillation cam rotates independently from the eccentric shaft. The oscillation plate supports the whole multipole-magnetized magnetic motor or maglev motor. Accordingly, the substrate can be uniformly heated by both rotating and all-directionally oscillating the substrate. | 12-23-2010 |
| 20110052160 | RADIANT HEATING ASSEMBLY - A radiant heating assembly for use with systems for heating an enclosed space by circulating a fluid through a closed tubing arrangement is provided. The inventive radiant heating assembly is made up of a radiant heating panel and tubing. The radiant heating panel is made up of a radiant heat transfer plate having a length and center line, and an elongated C-shaped or side opening receptacle that extends along the center line of the plate for receiving the tubing. A plurality of depressions extends along an inner surface of the C-shaped receptacle that interfaces with the plate. The tubing conforms to these depressions, thereby allowing the radiant heating assembly to achieve greater radiant heat dissipation capacity and efficiency. | 03-03-2011 |
| 20110150439 | GLASS-CERAMIC COOKTOP AND METHOD OF ASSEMBLING THE SAME - A cooking appliance includes a glass cooktop panel and a cooktop frame. A radiant heating element is positioned between the cooktop frame and the glass cooktop panel. The heating element has an upper surface biased toward a lower surface of the glass cooktop panel. A screwless spring clip is coupled to both the heating element and the cooktop frame so as to secure the heating element to the cooktop frame. | 06-23-2011 |
| 20110229113 | HEATING DEVICE FOR A THERMOPLASTIC PROSTHESIS SHAFT BLANK - Heating arrangement for a thermoplastic prosthesis socket blank, said heating arrangement comprising a holder ( | 09-22-2011 |
| 20110262118 | RADIANT ELECTRIC HEATER - A radiant electric heater comprises a dish-shaped enclosure ( | 10-27-2011 |
| 20120008926 | HEAT TREATMENT APPARATUS HEATING SUBSTRATE BY IRRADIATION WITH LIGHT - A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer. | 01-12-2012 |
| 20120033953 | BIDIRECTIONAL HEATING COOKER - Provided is a bidirectional heating cooker that supplements and improves a function of a conventional infrared radiation cooker, in which the bidirectional heating cooker further includes a lower heating unit that is placed at the lower end of a cooking pan that is heated by radiant heat irradiated by an infrared lamp and that directly heats the cooking pan, to thereby heat the cooking pan quickly by the lower heating unit to thus make the upper and lower portions of food such as meat put on the cooking pan more quickly roasted than the conventional infrared radiation cooker and reduce a burden of electric charges based on a shortened heating time of the cooking pan, and to thereby make it possible to cook food rapidly by an upper heating unit with the infrared lamp and the lower heating unit that is placed on the cooking pan. | 02-09-2012 |
| 20120099845 | METHODS AND APPARATUS FOR CONTROLLING THE SUPPLY OF POWER TO A RADIANT HEATER OF A COOKING APPLIANCE - Methods and apparatus for controlling the supply of power to a radiant heater of a cooking hob. According to one implementation a method is provided that includes the use of a control circuit that is configured to deliver power to the radiant heater via first and second electrical paths. One control method includes supplying a first level of power to the radiant heater through a closed disconnection switch situated in the first electrical path while sensing a temperature of the cooking hob. Upon detecting that the temperature has reached or exceeded a predetermined temperature, the control circuit terminates the supply of power to the radiant heater through the first electrical path by opening the disconnection switch and for at least a period of time initiating the supply of a second level of power to the radiant heater through the second electrical path, the second level of power being less than the first level of power and sufficiently low to cause the radiant heater to cool. | 04-26-2012 |
| 20120269498 | UNIT FOR SUPPORTING A SUBSTRATE AND APPARATUS FOR TREATING A SUBSTRATE WITH THE UNIT - A substrate treatment apparatus and a supporting unit are provided. The substrate treatment apparatus includes a chamber in which a substrate is processed; a supporting unit that is disposed in the chamber and is configured to support the substrate; and a heating member that is configured to apply heat to the substrate supported by the supporting unit. The supporting unit includes a plate; a plurality of supporting pins upwardly protruding from the plate; and at least one auxiliary pin upwardly protruding from the plate. A distance between a central point of the plate and the at least one auxiliary pin is different from a distance between the central point of the plate and the supporting pins. | 10-25-2012 |
| 20120328273 | HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD - Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput. | 12-27-2012 |
| 20130272686 | SUBSTRATE HEAT TREATMENT APPARATUS - The present invention provides a substrate heat treatment apparatus capable of uniformly heat a substrate at high speed with less breakage of constituent members due to thermal expansion even at high temperature. An embodiment of the present invention is a substrate heat treatment apparatus to perform heat treatment for a substrate and includes: a peripheral ring capable of supporting the substrate; a connection ring; a lifting device to raise and lower the peripheral ring balls having a lower heat conductivity than that of the peripheral ring; and a lamp to heat the substrate supported by the peripheral ring. The balls are different members from both of the peripheral ring and the connection ring. The lifting device raises and lowers the peripheral ring between a first position close to the lamp and a second position distant from the lamp. | 10-17-2013 |
| 20140169772 | HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATION WITH FLASH LIGHT - A susceptor of a holding part for holding a semiconductor wafer includes a disc-shaped holding plate, an annular shaped guide ring, and a plurality of support pins. The guide ring has an inside diameter greater than the diameter of the semiconductor wafer and is installed on the peripheral portion of the top face of the holding plate. The guide ring has a tapered surface along the inner circumference. The semiconductor wafer before irradiated with flash light is supported by the support pins. The annular shape of the guide ring increases the contact area when the semiconductor wafer that has jumped off the susceptor and fallen when irradiated with flash light collides with the guide ring, thus reducing the impact of the collision and preventing cracks in the substrate. | 06-19-2014 |
| 20140212117 | HEAT TREATMENT APPARATUS HEATING SUBSTRATE BY IRRADIATION WITH LIGHT - A capacitor, a coil, a flash lamp, and a switching element such as an IGBT are connected in series. A controller outputs a pulse signal to the gate of the switching element. A waveform setter sets the waveform of the pulse signal, based on the contents of input from an input unit. With electrical charge accumulated in the capacitor, a pulse signal is output to the gate of the switching element so that the flash lamp emits light intermittently. A change in the waveform of the pulse signal applied to the switching element will change the waveform of current flowing through the flash lamp and, accordingly, the form of light emission, thereby resulting in a change in the temperature profile for a semiconductor wafer. | 07-31-2014 |
| 20150037018 | Temperature Control Pin, and The Device and Method For Supporting Substrate In UV Curing Process - A temperature control pin, and the device and the method for supporting a substrate in the ultraviolet (UV) solidifying alignment process are disclosed. The temperature control pins includes a supporting pin for supporting a substrate, a heater being arranged within the supporting pin and is close to a top of the supporting pin, and a cooling system. The heater is controlled by the temperature control system to heat up the supporting pin. The cooling system is controlled by the temperature control system to cool down the supporting pin, and cooperatively operates with the heater to dynamically adjust the temperature of the supporting pins. When being heated, the temperature of the temperature control pins is adjusted by the temperature control system, and the substrate is heated uniformly such that the “Pin Mura” phenomenon is reduced or decreased. | 02-05-2015 |
| 20150037019 | SUSCEPTOR SUPPORT SHAFT AND KINEMATIC MOUNT - A taper assembly includes a taper housing comprising a coaxial conical shaped opening converging into a cylindrically shaped opening. A rotation housing is coupled to the taper housing by a coupling member. The rotation housing comprises a plurality of vent holes configured to vent gas through the taper assembly. A susceptor support assembly includes a central shaft having a base with a tapered bottom, a susceptor support, and a susceptor. The susceptor support includes a plurality of arms extending outwardly from the central shaft, wherein the central shaft extends through a central opening in the susceptor support. The plurality of arms are configured to house a plurality of balls in indentations in the arms. The susceptor includes a disk-shaped body having a plurality of grooves at an edge of the body. The plurality of grooves are configured to contact the plurality of balls at two or more contact points. | 02-05-2015 |
| 20150063792 | LAMP CROSS-SECTION FOR REDUCED COIL HEATING - Embodiments of apparatus for providing radiant energy in the form of electromagnetic radiation are provided herein. In some embodiments a radiation source for electromagnetic radiation includes a tubular body formed from a material transparent to electromagnetic radiation; a filament disposed within the tubular body; and a reflective coating disposed on a portion of the tubular body to form a reflective portion, wherein the reflective portion is configured to minimize reflection of electromagnetic radiation emanating from the filament during use back to the filament. | 03-05-2015 |
| 20150071622 | DEVICE AND METHOD FOR BAKING SUBSTRATE - The present disclosure relates to a device and a method for baking a substrate. The device includes a hot plate, and a supporting member for supporting a substrate to be processed, wherein the supporting member is located between the hot plate and the substrate to be processed, and can move relative to the hot plate so as to adjust the contacting position of the supporting member with the substrate to be processed. With the device, the yield of the substrate can be increased. | 03-12-2015 |
| 20150093100 | SUPPORT RING WITH ENCAPSULATED LIGHT BARRIER - Embodiments described herein provide a thermal processing apparatus with a heat source and a rotating substrate support opposite the heat source, the rotating substrate support comprising a support member with a light blocking member. The light blocking member may be an encapsulated component, or may be movably disposed inside the support member. The light blocking member may be opaque and/or reflective, and may be a refractory metal. | 04-02-2015 |
| 20160118278 | APPARATUS FOR LIQUID TREATMENT OF WAFER SHAPED ARTICLES AND HEATING SYSTEM FOR USE IN SUCH APPARATUS - An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. At least the transparent plate positioned between the infrared heating elements and the underside of a wafer is mounted for rotation with the spin chuck. Alternatively, the transparent plate is part of a housing that encloses the infrared heating elements and that rotates with the spin chuck as the heating elements are stationary relative thereto. | 04-28-2016 |
