Entries |
Document | Title | Date |
20080205482 | METHOD AND TESTING EQUIPMENT FOR LEDs AND LASER DIODES - The present invention is a non-invasive method and associated apparatus for determining the junction temperature for an LED or laser diode (collectively “LED”). First a sample LED is placed in a heat chamber and the change of the LED's peak wavelength is recorded over time, as is the change in the temperature in the heat chamber. Since the heat chamber supplies the major component to the junction temperature, dwarfing the other components, it is a reasonable proxy for true junction temperature. The data is compiled to determine change of peak wavelength as a function of temperature and that function can then be used to determine junction temperature of similar LEDs that are installed in a system or manufactured. The invention may also be used to measure other useful data, such as power, output power changing with the junction temperature and intensity of the LED over time and may be used to estimate failure rate. | 08-28-2008 |
20080219319 | BIOLOGICAL PARAMETER MONITORING SYSTEM AND METHOD THEREFOR - A system and method for monitoring biological parameters that allows a user to wirelessly monitor one or more biological parameters of one or more individuals, either continuously or periodically is disclosed. The system may send an alert when the biological parameter exceeds a predetermined threshold, and also provides information to the user about selected individuals or about components of the system. | 09-11-2008 |
20080259999 | Systems and Methods for Resistance Compensation in a Temperature Measurement Circuit - Various systems and methods for temperature measurement are disclosed. For example, some embodiments of the present invention provide methods for temperature measurement that include exciting a provided transistor with at least four sequential input signals of different magnitudes. In response, the transistor exhibits a sequence of output signals corresponding to the four sequential input signals. The sequence of output signals is sensed using a different gain for each of the output signals included in the sequence of output signals, and the output signals included in the sequence of output signals are combined such that the combined output signals eliminates a resistance error. The combined output signals are then used to calculate a temperature of the transistor. | 10-23-2008 |
20080279254 | SEMICONDUCTOR TEMPERATURE SENSOR WITH HIGH SENSITIVITY - An temperature sensor circuit is disclosed. In one embodiment, the temperature sensor comprises an input circuit with a current mirror for forcing a current down a reference stage and an output stage. The reference stage and the output stage include P-N junctions (e.g., using bipolar transistors) with differing junction potentials. By tailoring the resistances in the reference and output stages, the input circuit produces two output voltages, one of which varies predictably with temperature, and one which is stable with temperature. The input circuit is preferably used in conjunction with an amplifier stage which preferably receives both the temperature-sensitive and non-temperature-sensitive outputs. Through various resistor configurations in the amplifier stage, the output of the temperature sensor can be made to vary at a higher sensitivity than produced by the temperature-sensitive output of the input circuit. Moreover, as a result of the non-temperature-sensitive output, the output of the temperature sensor is additionally and beneficially tailored in its offset voltage in a temperature-independent manner. The result is a flexible circuit that can achieve very high sensitivities and near-ideal performance even at lower power supply voltages. | 11-13-2008 |
20080285624 | Temperature Sensor Circuit - A temperature sensor circuit whose output voltage has high precision is provided. The temperature sensor circuit includes a Darlington circuit having bipolar transistors, a constant current circuit, and a current control circuit. Emitter currents of the bipolar transistors are made equal to one another by the constant current circuit. Base currents corresponding to the emitter currents of the respective bipolar transistors are sunk by the current control circuit. | 11-20-2008 |
20080291969 | Temperature sensing circuit and semiconductor memory device using the same - A temperature sensing circuit comprises a temperature sensing unit for generating a reference voltage having a constant level, regardless of a temperature fluctuation, and a variable voltage to be changed according to the temperature fluctuation, and a comparison unit for comparing the reference voltage to the variable voltage, detecting an ambient temperature and generating a temperature detecting signal. | 11-27-2008 |
20080291970 | ON CHIP TEMPERATURE MEASURING AND MONITORING CIRCUIT AND METHOD - A device temperature measurement circuit, an integrated circuit (IC) including a device temperature measurement circuit, a method of characterizing device temperature and a method of monitoring temperature. The circuit includes a constant current source and a clamping device. The clamping device selectively shunts current from the constant current source or allows the current to flow through a PN junction, which may be the body to source/drain junction of a field effect transistor (FET). Voltage measurements are taken directly from the PN junction. Junction temperature is determined from measured junction voltage. | 11-27-2008 |
20080304546 | SYSTEM TO CALIBRATE ON-DIE TEMPERATURE SENSOR - A system may include biasing of diodes of a temperature sensor disposed in an integrated circuit die using a current from an off-die current source, generation of a voltage based on the current and a temperature of the integrated circuit die, and determination of a first temperature based on the voltage. Such a system may further include amplification of the voltage using an oscillator and a chopper stabilizer, determination of a first amplified voltage associated with a first state of the oscillator and a second amplified voltage associated with a second state of the oscillator, and determination of a third voltage based on the first amplified voltage and the second amplified voltage, wherein determination of the first temperature based on the voltage comprises determination of the first temperature based on the third voltage. | 12-11-2008 |
20090028213 | Temperature Sensor, Integrated Circuit, Memory Module, and Method of Collecting Temperature Treatment Data - According to one embodiment of the present invention, a temperature sensor is provided, including a first electrode, a second electrode, a nanoporous material disposed between the first electrode and the second electrode, and a diffusion material which is located outside the nanoporous material that is capable of diffusion into the nanoporous material. The amount of diffusion material diffusing into the nanoporous material is dependent on the temperature to which the temperature sensor is exposed. The resistance of the nanoporous material is dependent on the amount of diffusion material diffusing into the nanoporous material. | 01-29-2009 |
20090046761 | TEMPERATURE SENSOR CIRCUIT, DEVICE, SYSTEM, AND METHOD - A sensor, device, system and method for sensing temperature includes a pull up circuit coupled to a pull down circuit for generating a variable pull up output current and a variable pull down output current varying according to circuit elements responsive to temperature change. A pull up transistor and a pull down transistor are respectively serially coupled to first and second switches for alternatingly respectively switching additional pull up and pull down current into the pull up output current and the pull down output current. A comparator controls the additional pull up and pull down currents in response to a comparison of a summed output voltage and a reference voltage. | 02-19-2009 |
20090110027 | METHODS AND APPARATUS FOR A FULLY ISOLATED NPN BASED TEMPERATURE DETECTOR - Methods and apparatus for a fully isolated NPN-based temperature detector are disclosed. A disclosed method to determine the temperature of a circuit comprises generating a first current that increases as temperature increases, generating a second current that decreases as temperature increases, and detecting the temperature by receiving a first and second signal based on the first and second currents to determine whether the temperature exceeds at least one temperature threshold. | 04-30-2009 |
20090129440 | Sensor - A sensor, in particular a thermal sensor and/or gas sensor, encompassing an electrical sensor component having an electrical property whose value changes in temperature-dependent fashion, wherein the temperature-dependent electrical property is a resistance or an impedance. Thermal and electrical decoupling of the active structure from the substrate is accomplished by way of porous silicon and/or a cavity manufactured by electropolishing. | 05-21-2009 |
20090141771 | TEMPERATURE-SENSING AND TRANSMITTING ASSEMBLIES, PROGRAMMABLE TEMPERATURE SENSOR UNITS, AND METHODS OF MAKING AND USING THEM - In an exemplary embodiment, a temperature sensor and a 4-20 mA transmitter on a single flexible circuit subassembly with a separate housing suitable for use in industrial control or HVAC applications. In a preferred embodiment, a narrow flex circuit substrate includes a silicon diode-based surface-mount sensor at a sensor end, a surface-mount programmable transmitter IC on a flex circuit substrate in the transmitter section, conductive traces connecting the sensor to the transmitter IC, and two conductive pads at an output end for connecting the 4-20 mA output to a pair of external wires. Additional traces on the flex subassembly are provided for testing and programming the transmitter IC and sensor. The sensor end of the flex subassembly is mounted in a metal sensor tube, filled and sealed in the same manner as RTD or thermistor sensors with leads are currently assembled for use in industrial control or HVAC applications. | 06-04-2009 |
20090154525 | APPARATUS AND METHOD FOR MEASURING CHARACTERISTIC AND CHIP TEMPERATURE OF LED - An apparatus for measuring a characteristic and a chip temperature of an LED includes a thermal conductive component. An LED chip is disposed on the thermal conductive component. A temperature control unit is connected to the thermal conductive component for providing a temperature to the thermal conductive component, and therefore providing the temperature to the LED chip via the thermal conductive component. A power-source and voltage-meter unit provides a current to the LED chip, and measures a voltage value of the LED chip. Under a measurement mode, the current is featured with a current waveform having a high current level and a low current level which are alternatively changed, for applying to the LED chip. Measurements are conducted respectively corresponding to the high current level and the low current level, and a correlation curve between the voltage and the temperature can be obtained with the results of measurement. | 06-18-2009 |
20090168841 | TEMPERATURE SENSOR - A temperature sensor that can be used in semiconductor devices includes a reference voltage generator for dividing a power supply voltage and outputting a reference voltage, a compare voltage generator for outputting compare voltages with different levels depending on a change of a control signal, a temperature voltage generator for generating a temperature voltage based on the reference voltage and a threshold voltage of a MOS transistor, and a comparator for comparing an amplified temperature voltage and the compare voltage. | 07-02-2009 |
20090190628 | SUBSTRATE BASED ON TEMPERATURE SENSING - A method for providing accurate temperature sensing of a substrate utilizing the PN junction of a transistor formed on the substrate is described. | 07-30-2009 |
20090207882 | Temperature Sensor Module - A temperature sensor module includes a first temperature sensor configured for sensing the temperature of the environment, and a second temperature sensor configured for sensing the temperature of an eardrum. The first temperature sensor is a thermal diode, and the second temperature sensor is a thermopile. Preferably, the second temperature sensor may be a CMOS-infrared temperature sensor. The first temperature sensor and the second temperature sensor are both made of the semiconductor material such that they have same physical characters and same raising/falling temperature speeds even if entering into the environment with the different temperatures. Therefore, they are proofread easily, have a low manufacturing cost and consume low power. | 08-20-2009 |
20090207883 | PRECISION TEMPERATURE SENSOR - A temperature sensor circuit in accordance with an embodiment of the present invention includes a temperature sensing element operable to provide a temperature voltage that is linearly related to the absolute temperature of the circuit. The temperature sensing element includes a first bi-polar junction transistor and a second bipolar junction transistor connected between a supply voltage and a common ground, wherein the base of first bipolar junction transistor is connected to the base of the second bipolar junction transistor, a first resistor connected between an emitter of the first bipolar junction transistor and the common ground and a second resistor connected between the common ground and a first node, wherein the temperature voltage is provided to the first node across the second resistor. The temperature sensor circuit also includes a current supply element operable to supply a common current to a collector of the first bipolar junction transistor, the second bipolar junction transistor and to the second resistor, respectively, an early voltage element operable to compensate for variations in voltage, a base current element operable to provide a steady base current to the bases of the first and second bipolar junction transistors, a channel modulation element operable to compensate for channel modulation and a leakage element operable to compensate for epi-substrate leakage between the circuit and a substrate on which it is formed. | 08-20-2009 |
20090238239 | APPARATUS AND METHODS FOR TEMPERATURE CALIBRATION AND SENSING - Some embodiments include apparatus and methods having a first switch, a second switch, and a circuit coupled to the first and second switches. The first switch may be configured to switch between an on-state and an off-state based on a value of a first current flowing through a number of resistors and a diode coupled in series with the resistors. The second switch may be configured to switch between the on-state and the off-state based on a value of a second current on a circuit path. The second current is a function of a voltage at a node between two of the resistors and a resistance of the circuit path. The circuit may be configured to provide a temperature reading based on the number of times the first switch or the second switch switches between the on-state and the off-state during a time interval. | 09-24-2009 |
20090252198 | Temperature Sensor Adapted in Charge and Discharge Control Circuit of Secondary Battery - A temperature sensor adapted in a charge and discharge control circuit of a secondary battery, cooperates with a micro-controller of the charge and discharge control circuit. The temperature sensor is a non-polar temperature sensor manufactured by the semiconductor manufacturing technology. The temperature sensor includes a first signal pin, a second signal pin, a first thermal diode, and a second thermal diode paired with the first thermal diode. The positive electrode of the first thermal diode and the negative electrode of the second thermal diode, both connect to the first signal pin. The negative electrode of the first thermal diode and the positive electrode of the second thermal diode, both connect to the second signal pin. The temperature sensor is proofread easily, has a low manufacturing cost, consumes less power and has an excellent anti-interfere capability, etc. | 10-08-2009 |
20090268778 | TEMPERATURE DETECTOR AND THE METHOD USING THE SAME - A temperature detector comprises a first current mirror, a second current mirror, a first pulse generator, a second pulse generator, a phase detector and a controller. The current of the first current mirror is in variation with temperature, but the current of the second current mirror is not. If the output pulse of the first pulse generator appears earlier than that of the second pulse generator, the controller enhances the output current of the second current mirror. If the output pulse of the first pulse generator appears later than that of the second pulse generator, the controller decreases the output current of the second current mirror. | 10-29-2009 |
20090279584 | TEMPERATURE SENSING CIRCUIT FOR LOW VOLTAGE OPERATION - The present invention discloses a temperature sensing circuit which is adaptive toward low voltage IC environment, it mainly comprises: a temperature sensing unit, a temperature threshold control unit and a transconductance amplifier. The temperature sensing unit includes a bipolar transistor and PMOS transistors, and senses temperature via detecting voltage. The temperature threshold control unit includes PMOS transistors and NMOS transistors, and makes an over-temperature alert signal persistently sent out until temperature is lowered to a specified value when the temperature sensing unit detects an over-temperature state. The transconductance amplifier includes PMOS transistors and NMOS transistors, and makes the temperature sensing circuit of the present invention adapt to a low voltage IC environment. Further, the circuit architecture of the present invention does not require any use of operational amplifier or band-gap voltage reference source. Therefore, the present invention can reduce the production and design cost. | 11-12-2009 |
20090285261 | Integrated Circuit System Monitor - A temperature monitoring circuit for an integrated circuit on a monolithic chip, the temperature monitoring circuit comprising a temperature sensor disposed on the monolithic chip, a system monitor disposed on the monolithic chip, and electrically conductive traces for electrically connecting the temperature sensor to the system monitor. In this manner, the temperature on the monolithic chip can be monitored by the integrated circuit itself, and appropriate action can be programmed to occur upon attaining various set points or conditions. | 11-19-2009 |
20090296780 | Temperature measuring system and measuring method using the same - A temperature measuring system and a measuring method using the same are disclosed. The method for measuring an integrated circuit temperature includes the steps of: detecting a first difference in output voltage values between a first transistor and a second transistor by providing a first current through the first transistor and a second current through the second transistor; detecting a second difference in output voltage values between the first transistor and the second transistor by providing the second current through the first transistor and the first current through the second transistor; obtaining an average value by averaging the first difference and the second difference; and determining the temperature by multiplying the average value with a predetermined value. | 12-03-2009 |
20100008398 | Semiconductor temperature sensor - Provided is a semiconductor temperature sensor capable of enhancing accuracy of temperature detection. A constant current circuit ( | 01-14-2010 |
20100046580 | TEMPERATURE SENSOR CIRCUIT - A temperature sensor circuit includes a band-gap reference voltage circuit. The resistor and diode-connected bipolar transistor of the band-gap reference voltage circuit are separated into a transistor-resistor series circuit and a transistor-diode series circuit. The transistor-resistor series circuit is configured such that an emitter of the bipolar transistor Q | 02-25-2010 |
20100054302 | TWO-TERMINAL SEMICONDUCTOR SENSOR DEVICE - Provided is a two-terminal semiconductor sensor device with which an external device having low circuit or element accuracy may be used. An output voltage (VOUT) of the two-terminal semiconductor sensor device based on temperature is not based on a constant current of a constant current source ( | 03-04-2010 |
20100111137 | TEMPERATURE SENSING CIRCUIT USING CMOS SWITCH-CAPACITOR - A temperature sensing circuit using CMOS switch-capacitor includes a PNP BJT, a hysteresis comparator, a transconductance amplifier, two current sources, two capacitors, and six switches. A voltage complementary to the absolute temperature (CTAT) is generated according to the PNP BJT, and a voltage proportional to the absolute temperature (PTAT) is generated according to two capacitors and the transconductance amplifier. When the voltage proportional to absolute temperature is greater than the voltage complementary to absolute temperature as the temperature rising, the hysteresis comparator outputs a high level signal. | 05-06-2010 |
20100166036 | System and method for remote temperature sensing - An apparatus and method are disclosed for temperature measurement that includes performing a first ΔVbe measurement of a first temperature of a diode circuit comprising a transistor and, subsequently, performing a first Vbe measurement of a second temperature of the diode circuit. A temperature difference is calculated between the second temperature and the first temperature. If the temperature difference is not greater than a predetermined amount, a second Vbe measurement of a third temperature of the diode circuit is subsequently performed. If the temperature difference is greater than the predetermined amount, a second ΔVbe measurement of the second temperature of the diode circuit is performed. | 07-01-2010 |
20100322284 | Method For Determining Power Semiconductor Temperature - A method for determining power semiconductor operating temperatures uses a database of measured temperatures. Each temperature is associated with operating conditions and determined by laboratory testing in an environment indicative of operation of the power semiconductors actual operations. | 12-23-2010 |
20100322285 | APPARATUS AND METHOD FOR MEASURING LOCAL SURFACE TEMPERATURE OF SEMICONDUCTOR DEVICE - An apparatus and method is described for measuring a local surface temperature of a semiconductor device under stress. The apparatus includes a substrate, and a reference MOSFET. The reference MOSFET may be disposed closely adjacent to the semiconductor device under stress. A local surface temperature of the semiconductor device under stress may be measured using the reference MOSFET, which is not under stress. The local surface temperature of the semiconductor device under stress may be determined as a function of drain current values of the reference MOSFET measured before applying stress to the semiconductor device and while the semiconductor device is under stress. | 12-23-2010 |
20100329304 | Circuit and method for beta variation compensation in single-transistor temperature sensor - A circuit ( | 12-30-2010 |
20110002359 | SENSOR AND METHOD FOR PRODUCING THE SAME - A sensor, in particular for the spatially resolved detection, includes a substrate, at least one micropatterned sensor element having an electric characteristic whose value varies as a function of the temperature, and at least one diaphragm above a cavity, the sensor element being disposed on the underside of the at least one diaphragm, and the sensor element being contacted via connecting lines, which extend within, on top of or underneath the diaphragm. In particular, a plurality of sensor elements may be formed as diode pixels within a monocrystalline layer formed by epitaxy. Suspension springs, which accommodate the individual sensor elements in elastic and insulating fashion, may be formed within the diaphragm. | 01-06-2011 |
20110013668 | SEMICONDUCTOR CIRCUIT ARRANGEMENT AND ASSOCIATED METHOD FOR TEMPERATURE DETECTION - A semiconductor circuit arrangement and a method for temperature detection is disclosed. One embodiment includes a semiconductor substrate, on which is formed a first insulating layer and thereon a thin active semiconductor region, which is laterally delimited by a second insulating layer. In the active semiconductor region, a first and second doping zone are formed on the surface of the first insulating layer for the definition of a channel zone, wherein there is formed at the surface of the channel zone a gate dielectric and thereon a control electrode for the realization of a field effect transistor. In the active semiconductor region, a diode doping zone is formed on the surface of the first insulating layer, which zone realizes a measuring diode via a diode side area with the first or second doping zone and is delimited by the second insulating layer at its further side areas. | 01-20-2011 |
20110080933 | DEVICE FOR DETECTING TEMPERATURE VARIATIONS IN A CHIP - A device for detecting temperature variations of the substrate of an integrated circuit chip, including, in the substrate, implanted resistors connected as a Wheatstone bridge, wherein each of two first opposite resistors of the bridge is covered with an array of metal lines parallel to a first direction, the first direction being such that a variation in the substrate stress along this direction causes a variation of the unbalance value of the bridge. | 04-07-2011 |
20110096809 | MULTIPLE SENSOR THERMAL MANAGEMENT FOR ELECTRONIC DEVICES - A device includes a current source circuit to separately provide a first current and a second current and a thermal detection device coupleable to the output of the current source circuit. The device further includes a voltage detection circuit to provide a first indicator of a first voltage representative of a voltage at the thermal detection device in response to the second current and a second indicator of a second voltage representative of a voltage difference between the voltage at the thermal detection device in response to the second current and a voltage at the voltage detection device in response to the first current. The device further includes a temperature detection circuit to provide an over-temperature indicator based on the first indicator and the second indicator, wherein an operation of a circuit component of the device can be adjusted based on the over-temperature indicator. | 04-28-2011 |
20110110396 | Bimetallic integrated on-chip thermocouple array - An integrated circuit chip is defined by a stack of several interconnected layers. The integrated circuit chip includes at least two layers of dissimilar metal patterned to define an array of integrated bimetallic thermocouples. | 05-12-2011 |
20110211613 | Thermally Decoupled Micro-Structured Reference Element for Sensors - A micro-structured reference element for use in a sensor having a substrate and a dielectric membrane. The reference element has an electrical property which changes its value on the basis of temperature. The reference element is arranged with respect to the substrate so that the reference element is (i) electrically insulated from the substrate, and (ii) thermally coupled to the substrate. The reference element is arranged on the underside of the dielectric membrane. The reference element and side walls of the substrate define a circumferential cavern therebetween, which is also bounded by the dielectric membrane, arranged between them. The dielectric membrane is connected to the substrate. A surface area of the reference element which is covered by the dielectric membrane is greater than or equal to 10% and less than or equal to 100% of the possible coverable surface area. A surface of the cavern which is covered by the dielectric membrane is greater than or equal to 50% and less than or equal to 100% of the possible coverable surface. An edge of the reference element which faces the dielectric membrane has greater than or equal to 50% and less than or equal to 100% of its extent contacted by the dielectric membrane. Sections of the side walls of the cavern which face the dielectric membrane have greater than or equal to 50% and less than or equal to 100% of the possible size contacted by the dielectric membrane. | 09-01-2011 |
20110274140 | THIN-FILM SEMICONDUCTOR DEVICE - A thin-film semiconductor device includes a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter. | 11-10-2011 |
20120183017 | SYSTEMS AND METHODS FOR DETERMINING DEVICE TEMPERATURE - Circuitry for measuring and/or monitoring device temperature may include a first node coupled to ground, and a second node and a first resistor coupled in series to ground and in parallel to the first node. A first current driven to the first node and a second current driven to the second node can be selected such that a first voltage measured at the first node and a second voltage measured at the second node are substantially equal. The circuitry may also include a third node and a second resistor coupled in series to ground. A third current driven to the third node can be selected such that a third voltage measured at the third node is substantially equal to a reference voltage. Measures of the second and third currents and measures of the first and second resistors can be used to determine device temperature. | 07-19-2012 |
20120207190 | Circuits For And Methods Of Accurately Measuring Temperature Of Semiconductor Junctions - A system for and method of providing a signal proportional to the absolute temperature of a semiconductor junction is provided. The system comprises: a preprocessing stage configured and arranged so as to process a signal from the semiconductor junction so as to produce a preprocessed signal including a resistance error term; and a temperature to voltage converter stage for converting the preprocessed signal to a voltage proportional to absolute temperature representing the absolute temperature of the semiconductor junction; wherein the system is configured and arranged so as to remove the resistance error term so as to produce a resistance error free signal representative of the semiconductor junction temperature. | 08-16-2012 |
20120224605 | APPARATUS AND METHODS FOR TEMPERATURE CALIBRATION AND SENSING - Some embodiments include apparatus and methods having a first switch, a second switch, and a circuit coupled to the first and second switches. The first switch may be configured to switch between an on-state and an off-state based on a value of a first current flowing through a number of resistors and a diode coupled in series with the resistors. The second switch may be configured to switch between the on-state and the off-state based on a value of a second current on a circuit path. The second current is a function of a voltage at a node between two of the resistors and a resistance of the circuit path. The circuit may be configured to provide a temperature reading based on the number of times the first switch or the second switch switches between the on-state and the off-state during a time interval. | 09-06-2012 |
20120257650 | ON-CHIP TEMPERATURE SENSOR - A method and apparatus for determining a temperature of a semiconductor device is provided herein. One aspect of the disclosed subject matter is seen in a temperature sensing device. The temperature sensing device comprises a diode and a circuit. The diode is adapted to be reverse biased by a charging voltage applied thereto. The circuit determines a temperature of the diode based on a rate that the voltage on the diode discharges in response to the charging voltage being uncoupled from the diode. | 10-11-2012 |
20120327972 | TEMPERATURE SENSOR - Provided is a low power consuming, highly precise, wide-range temperature sensor. The temperature sensor includes a current mirror, a first MOS transistor, and a second MOS transistor. The current mirror generates a first reference current in response to a particular current applied by a power voltage and a second reference current in response to the first reference current so as to output the first and second reference currents. The first MOS transistor includes a drain terminal D | 12-27-2012 |
20130022077 | Novel Microbolometer and Pixel Exploiting Avalanche Breakdown - A novel detector apparatus and detection method for measuring temperature exploit the avalanche transition edge, and are useful for contact and remote sensing & imaging and microbolometry of thermal, THz, LWIR/MWIR/SWIR/NIR, and visible light. The invention allows uncooled operation at kHz frame rates. | 01-24-2013 |
20130070807 | Temperature Sensor, Electronic Device and Temperature Measurement Method - Disclosed is a temperature sensor ( | 03-21-2013 |
20130083825 | LOW VOLTAGE TEMPERATURE SENSOR AND USE THEREOF FOR AUTONOMOUS MULTIPROBE MEASUREMENT DEVICE - A bandgap sensor which measures temperatures within an integrated circuit is presented. The sensor may include a first transistor having an emitter node coupled series to a first resistor and a first current source, wherein a PTAT current flows through the first resistor, and a second transistor having a base node coupled to a base node of the first transistor, and a collector node coupled to a collector node of the first transistor, further wherein the first and second transistors are diode connected. The sensor may further include a first operational amplifier providing negative feedback to the first current source, wherein the negative feedback is related to a difference in the base-emitter voltages of the first and second transistors, and a second operational amplifier which couples the base-emitter voltage of the second transistor across a second resistor, wherein a CTAT current flows through the second resistor. | 04-04-2013 |
20130121377 | TEMPERATURE DETECTION CIRCUIT AND METHOD OF ADJUSTING THE SAME - A temperature detection circuit that can detect temperature with high accuracy regardless of manufacturing variations, and a method of adjusting the same. The circuit includes: first and second diodes having respective independent p-n junctions; a first current path including a first variable voltage dividing resistor series connected to the first diode; a second current path including a second variable voltage dividing resistor series connected to the second diode; a reference voltage generation part that feeds back a differential voltage to each of the first and second current paths and outputs as a reference voltage the differential voltage indicating a difference between a first divided voltage of the first variable voltage dividing resistor and a potential on the second current path; and a temperature detection signal generation part generating a temperature detection signal based on a second divided voltage of the second variable voltage dividing resistor. | 05-16-2013 |
20130128923 | DEVICE FOR RAISING TEMPERATURE AND METHOD FOR TESTING AT ELEVATED TEMPERATURE - An external DC power supply | 05-23-2013 |
20130170520 | TEMPERATURE SENSOR FOR IMAGE SENSORS - An integrated temperature sensor provides an output current proportional to temperature rising from a zero value at a selectable reference temperature. The reference temperature can be selected by varying resistive values in the sensor's circuit. The temperature sensor can be manufactured at low cost and fully integrated on a chip using CMOS technology, and may be used for low-power applications. | 07-04-2013 |
20130177041 | SYSTEM AND METHOD FOR MONITORING IN REAL TIME THE OPERATING STATE OF AN IGBT DEVICE - A system and method are provided for monitoring in real time the operating state of an IGBT device, to determine a junction temperature and/or the remaining lifetime of an IGBT device. The system includes a differential unit configured to receive a gate-emitter voltage characteristic of the IGBT device to be measured and to differentiate the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device. The system also includes a timer unit configured to measure the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device, and a junction temperature calculation unit configured to determine at least one of the junction temperature of the IGBT device and/or the remaining lifetime of the IGBT device based on the measured time delay. | 07-11-2013 |
20130195142 | SMALL AREA HIGH PERFORMANCE CELL-BASED THERMAL DIODE - A thermal sensing system includes a circuit having a layout including standard cells arranged in rows and columns. First and second current sources provide first and second currents, respectively. The thermal sensing system includes thermal sensing units, first and second switching modules, and an analog to digital converter (ADC). Each thermal sensing unit is configured to provide a voltage drop dependent on a temperature at that thermal sensing unit. The first switching module is configured to select one of the thermal sensing units. The second switching module includes at least one switch controllable by a control signal. The at least one switch is configured to selectively couple the thermal sensing units, based on the control signal, to one of the first and second current sources, via the first switching module. The ADC is configured to convert an analog voltage, provided by the selected thermal sensing unit, to a digital value. | 08-01-2013 |
20130215931 | INTEGRATED TRANSDUCER PROVIDED WITH A TEMPERATURE SENSOR AND METHOD FOR SENSING A TEMPERATURE OF THE TRANSDUCER - A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane. | 08-22-2013 |
20130235903 | CMOS Temperature Sensor with Sensitivity Set by Current-Mirror and Resistor Ratios without Limiting DC Bias - An on-chip temperature sensor circuit can be implemented in a standard complementary metal-oxide-semiconductor (CMOS) process using PNP transistors. A pair of transistors have collector currents that are sensitive to voltage, both directly and due to saturation currents. A scaling resistor connects to the emitter of one transistor and its voltage compared to the other transistor's emitter voltage by an error amplifier that generates a bias voltage to current sources that are proportional to absolute temperature since the saturation current sensitivity is subtracted out. The current is mirrored to sink current through a multiplier resistor from an output. An amplifier connected across the multiplier resistor compares a reference voltage to set the DC bias independent of temperature sensitivity. The temperature sensitivity is proportional to the ratio of the multiplier resistor and the scaling resistor, and is multiplied by a mirroring factor. A differential output may also be provided. | 09-12-2013 |
20130266042 | TEMPERATURE SENSOR - A temperature sensor includes a constant current source and a transistor stack connected to the constant current source. The transistor stack includes a first transistor having a base connected to the constant current source and a collector coupled to a supply voltage. The collector of the first transistor is electrically isolated from the base of the first transistor. The transistor stack includes a second transistor connected to the first transistor. The second transistor has a collector connected to an emitter of the first transistor and has a base connected to the collector of the second transistor. The transistor stack includes an output node disposed between the constant current source and the base of the first transistor. A voltage of the output node is indicative of a temperature. | 10-10-2013 |
20140016669 | ON-CHIP TEMPERATURE SENSOR - A method and apparatus for determining a temperature of a semiconductor device is provided herein. One aspect of the disclosed subject matter is seen in a temperature sensing device. The temperature sensing device comprises a diode and a circuit. The diode is adapted to be reverse biased by a charging voltage applied thereto. The circuit determines a temperature of the diode based on a rate that the voltage on the diode discharges in response to the charging voltage being uncoupled from the diode. | 01-16-2014 |
20140023113 | TEMPERATURE SENSOR - A temperature sensor includes a signal delaying apparatus, a comparison apparatus, a multiplier and a counting apparatus. The signal delaying apparatus is configured to receive a step signal, perform a phase delay operation on the received step signal according to a temperature degree, and thereby forming a first output signal. The comparison apparatus is configured to receive the first output signal and the step signal, and accordingly output a second output signal. The multiplier is configured to receive the second output signal and a clock signal, and accordingly output a third output signal. The counting apparatus is configured to receive the third output signal, count the number of pulses of the third output signal, and generate a digital code accordingly. | 01-23-2014 |
20140023114 | SEMICONDUCTOR TEMPERATURE SENSOR WITH HIGH SENSITIVITY - An temperature sensor circuit is disclosed. In one embodiment, the temperature sensor comprises an input circuit with a current mirror for forcing a current down a reference stage and an output stage. The reference stage and the output stage include P-N junctions (e.g., using bipolar transistors) with differing junction potentials. By tailoring the resistances in the reference and output stages, the input circuit produces two output voltages, one of which varies predictably with temperature, and one which is stable with temperature. The input circuit is preferably used in conjunction with an amplifier stage which preferably receives both the temperature-sensitive and non-temperature-sensitive outputs. Through various resistor configurations in the amplifier stage, the output of the temperature sensor can be made to vary at a higher sensitivity than produced by the temperature-sensitive output of the input circuit. Moreover, as a result of the non-temperature-sensitive output, the output of the temperature sensor is additionally and beneficially tailored in its offset voltage in a temperature-independent manner. The result is a flexible circuit that can achieve very high sensitivities and near-ideal performance even at lower power supply voltages. | 01-23-2014 |
20140072013 | HEALTH MONITORING OF LIGHTS - The present disclosure provides methods, devices, and computer-readable media for health monitoring of lights. One or more embodiments include receiving data, including a junction temperature of a light emitting diode (LED), an ambient temperature, and a drive current associated with the LED, receiving a pre-existing LED performance data set, and determining an end of life of the LED based on the junction temperature of the LED, the ambient temperature, the drive current associated with the LED, and the pre-existing LED performance data set. | 03-13-2014 |
20140072014 | Temperature Control Apparatus - A temperature control apparatus includes a temperature monitoring integrated circuit (IC). The temperature monitoring IC has an output pin and is configured to generate an output signal having a voltage dependent on a sensed temperature. An output terminal is operatively connected to the output pin. An insulating material substantially surrounds the temperature monitoring IC. The insulating material substantially insulates the temperature monitoring IC from ambient heat and electromagnetic interference. | 03-13-2014 |
20140086277 | THERMAL SENSOR SYSTEM AND METHOD BASED ON CURRENT RATIO - A thermal sensor system which includes a thermal sensor and a voltage control network which applies a reference voltage level and a delta voltage level to the same or different thermal sensors. The thermal sensor develops a reference current signal in response to the reference voltage level and a delta current signal in response to the delta voltage level. A current gain network adjusts gain of the delta current signal. A current compare sensor, which is responsive to the reference current signal and the delta current signal, provides a comparison metric. A controller controls the current gain network to adjust gain of the delta current signal while monitoring the comparison metric to determine a gain differential value indicative of a current ratio between the current signals. The controller determines a temperature value based on the gain differential value. A LUT may be used to retrieve the temperature. | 03-27-2014 |
20140092939 | Thermal Sensor with Second-Order Temperature Curvature Correction - Some embodiments of the present disclosure relate to a stacked integrated chip structure having a thermal sensor that detects a temperature of one or a plurality of integrated chips. In some embodiments, the stacked integrated chip structure has a main integrated chip and a secondary integrated chip located on an interposer wafer. The main integrated chip has a reference voltage source that generates a bias current. The secondary integrated chip has a second thermal diode that receives the bias current and based thereupon generates a second thermal sensed voltage and a second reference voltage that is proportional to a temperature of the secondary integrated chip. A digital thermal sensor within the main integrated chip determines a temperature of the secondary integrated chip based upon as comparison of the second thermal sensed voltage and the reference voltage. | 04-03-2014 |
20140105246 | Temperature Controlled Structured ASIC Manufactured on a 28 NM CMOS Process Lithographic Node - A temperature control for a Structured ASIC chip, manufactured using a CMOS process is shown. A circuit employing temperature feedback using a microprocessor and active heating elements, that in a preferred embodiment uses decoupling cell capacitors, is employed to actively heat a die when the temperature of the die drops below a predetermined minimum temperature, in order to achieve timing closure in the chip. | 04-17-2014 |
20140105247 | TEMPERATURE MEASUREMENT SYSTEM FOR HARD DISK DRIVE - A temperature measurement system for a hard disk drive (HDD) includes a bipolar junction transistor (BJT) set inside the HDD, a temperature sensor, and a baseboard management controller (BMC) connected to the temperature sensor. A base of the BJT is connected to a collector of the BJT. The collector of the BJT is further connected to a first idle pin of a connector of the HDD. An emitter of the BJT is connected to a second idle pin of the connector of the HDD. The temperature sensor is connected to the first and second idle pins of the connector. The temperature sensor senses a voltage difference between the collector and the emitter of the BJT to obtain the temperature of the HDD. The BMC receives the temperature obtained through the temperature sensor. | 04-17-2014 |
20140112372 | DEVICE FOR MEASURING A TEMPERATURE OF A POWER SEMICONDUCTOR - Embodiments of the present invention provide a device for measuring a temperature of a power semiconductor, having means for applying an alternating voltage to the power semiconductor, and means for measuring an impedance between the control terminal of the power semiconductor and the channel terminal of the power semiconductor, the impedance being dependent on a temperature-dependent control resistor integrated in the power semiconductor. | 04-24-2014 |
20140140373 | APPARATUS AND METHOD OF TESTING SEMICONDUCTOR MODULE - There are provided an apparatus and a method of testing a semiconductor module capable of easily testing a power semiconductor module including a plurality of switching devices. The apparatus for testing a semiconductor module includes: a main substrate disposed within a case; a jig substrate detachably coupled to the main substrate; and a socket substrate detachably coupled to the jig substrate and having the semiconductor module mounted thereon. | 05-22-2014 |
20140146852 | SEMICONDUCTOR DEVICE - A semiconductor device includes a control voltage generator to generate a control voltage according to a temperature section signal; and a temperature voltage output block to output a temperature voltage varying with a temperature according to the control voltage and the temperature section signal. | 05-29-2014 |
20140177674 | Systems and Methods for Processing Temperature Data or Other Signals - In an embodiment, a circuit is configured to produce a magnetic field signal having a frequency spectrum. The circuit may also produce a temperature signal. A modulation circuit may modulate the temperature signal with a frequency outside the frequency spectrum of the magnetic field signal. The modulated signal and the magnetic field signal may be combined to produce a combined signal. A separation circuit may be configured to separate component signals from the combined signal. The separation circuit may include a first filter, which, when applied to the combined signal, produces a filtered signal; a modulation circuit configured to shift the data representing the temperature signal to a baseband frequency; and a second filter configured to separate the data representing the temperature signal from the combined signal. | 06-26-2014 |
20140192839 | Method and Apparatus for Measuring Temperature of Semiconductor Layer - A method and apparatus are provided to directly and accurately detect a temperature of a semiconductor layer at the time of depositing and film-forming the semiconductor layer. First wavelength laser light having light transmissivity attenuated in a first temperature range and second wavelength laser light having light transmissivity attenuated in a second temperature range are applied to the semiconductor layer. A light receiving unit receives light passing through the semiconductor layer. An attenuation range of the laser light transmissivity is detected when the temperature of the semiconductor layer is increased and the detection light quantity of the first wavelength laser light is attenuated. As the temperature continues to increase and the detection light quantity of the second wavelength laser light exceeds an attenuation start point, the temperature of the semiconductor layer is calculated based on a detection light quantity at a predetermined measurement time and the attenuation range. | 07-10-2014 |
20140198825 | Epitaxial Formation Mechanisms of Source and Drain Regions - The embodiments of mechanisms for monitoring thermal budget of an etch process of a cyclic deposition/etch (CDE) process to form an epitaxially grown silicon-containing material are descried to enable and to improve process control of the material formation. The monitoring is achieved by measuring the temperature of each processed wafer as a function of process time to calculate the accumulated thermal budget (ATB) of the wafer and to compare the ATB with a reference ATB (or optimal accumulated thermal budget, OATB) to see if the processed wafer is within an acceptable range (or tolerance). The results are used to determine whether to pass the processed wafer or to reject the processed wafer. | 07-17-2014 |
20140247859 | SEMICONDUCTOR PACKAGE AND METHOD OF ESTIMATING SURFACE TEMPERATURE OF SEMICONDUCTOR DEVICE INCLUDING THE SAME - A semiconductor package includes a first package including a first substrate and a first semiconductor chip mounted on the first substrate and a second package facing and spaced apart from the first package. The second package includes a second substrate on which a second semiconductor chip is mounted. The semiconductor package also includes a connection structure electrically connecting the first and second packages to each other, a first temperature sensor connected to the first substrate, a second temperature sensor connected to the first semiconductor chip, and a third temperature sensor connected to the second semiconductor chip. | 09-04-2014 |
20140269834 | CIRCUIT ARRANGEMENTS - A circuit arrangement may include: a first bipolar transistor; a second bipolar transistor; wherein the circuit arrangement is configured to provide a first current flowing through the first bipolar transistor and a second current flowing through the second bipolar transistor; a resistor connected between a first input of the first bipolar transistor and a first input of the second bipolar transistor; a first circuit configured to provide a first current flowing through the resistor to a first input node of the first bipolar transistor, and a second circuit configured to provide a reference current to the first input node of the first bipolar transistor, wherein the first current and the reference current have different temperature dependencies. | 09-18-2014 |
20140334522 | Power Transistor With Integrated Temperature Sensor Element, Power Transistor Circuit, Method for Operating a Power Transistor, and Method for Operating a Power Transistor Circuit - A power transistor has a semiconductor body with a bottom side and top side spaced distant from the bottom side in a vertical direction. The semiconductor body includes a plurality of transistor cells, a source zone of a first conduction type, a body zone of a second conduction type, a drift zone of the first conduction type, a drain zone, and a temperature sensor diode having a pn-junction between an n-doped cathode zone and a p-doped anode zone. The power transistor also has a drain contact terminal on the top side, a source contact terminal on the bottom side, a gate contact terminal, and a temperature sense contact terminal on the top side. Depending on the first and second conduction types the anode or cathode zone is electrically connected to the source contact terminal and the other diode zone is electrically connected to the temperature sense contact terminal. | 11-13-2014 |
20140341257 | TEMPERATURE SENSOR SYSTEM AND METHOD - A temperature sensing system can include first and second temperature sensing circuits and a digitizing encoder. The first and second temperature sensing circuits can include respective devices with semiconductor junction areas. Temperature information can be determined from one or more characteristic signals measured from the temperature sensing circuits. A feedback circuit can be configured to provide one or more offset signals to the digitizing encoder. The one or more offset signals can correspond to components or characteristics of the first and second temperature sensing circuits. In an example, at least one of the first and second temperature sensing circuits can include an adjustable load circuit for use with the other of the first and second temperature sensing circuits. | 11-20-2014 |
20140341258 | MULTI-POINT TEMPERATURE SENSING METHOD FOR INTEGRATED CIRCUIT CHIP AND SYSTEM OF THE SAME - A multi-point temperature sensing method for integrated circuit chips and a system of the same are revealed. The system includes at least one slave temperature sensor embedded at preset positions for measuring temperature of a block and a master temperature sensor embedded in an integrated circuit chip and electrically connected to each slave temperature sensor. Variations of the slave temperature sensor induced by variations of process, voltage and temperature are corrected by the master temperature sensor. Thus the area the temperature sensors required on the integrated circuit chip is dramatically reduced and the stability of the temperature control system is improved. The problem of conventional System-on-a-Chip that only a limited number of temperature sensors could be used due to the area they occupied can be solved. | 11-20-2014 |
20150010041 | CIRCUIT ARRANGEMENT - According to various embodiments, a circuit arrangement is provided which includes a bridge circuit having at least two field effect transistors and a measurement circuit configured to measure a forward voltage of a body diode of any one of the at least two field effect transistors resulting from a current flowing through the field effect transistor. | 01-08-2015 |
20150063421 | TEMPERATURE MEASUREMENT APPARATUS USING NEGATIVE TEMPERATURE COEFFICIENT THERMISTER - A temperature measurement apparatus using a negative temperature coefficient (NTC) thermister is provided. A temperature sensor includes the NTC thermister and a variable resistor part, in which a resistance value of the variable resistor part varies between a first resistance value for a first output voltage value and a second resistance value for a second output voltage value to allow a voltage value corresponding to a present temperature to be outputted. A voltage temperature matching unit outputs the present temperature based on the first output voltage value and the second output voltage value. | 03-05-2015 |
20150092819 | SENSOR SIGNAL OUTPUT CIRCUIT AND METHOD FOR ADJUSTING IT - A sensor signal output circuit includes: a buffer amplifier which amplifies an output of a temperature sensor; an operational amplifier which amplifies an output of the buffer amplifier; an oscillator which generates a triangular wave signal; and a comparator which compares the triangular wave signal with an output of the operational amplifier to generate a PWM signal. After an offset adjusting resistor of the operational amplifier is adjusted at first temperature, the amplitude of the triangular wave signal is set to adjust the pulse width of the PWM signal at the first temperature. After that, a gain adjusting resistor of the operational amplifier is set to adjust the pulse width of the PWM signal at a second temperature. | 04-02-2015 |
20150098489 | SEMICONDUCTOR DEVICES INCLUDING ELECTRODES FOR TEMPERATURE MEASUREMENT - A semiconductor device includes: a semiconductor substrate; a plurality of conductive lines formed on the semiconductor substrate; and an electrode for temperature measurement. The electrode is connected to the plurality of conductive lines. An electronic device includes a semiconductor device and has a temperature sensing function. The semiconductor device includes: a semiconductor substrate; a plurality of conductive lines formed on the semiconductor substrate; and an electrode for temperature measurement. | 04-09-2015 |
20150117494 | TEMPERATURE SENSOR AND RELATED METHOD - A temperature sensor, including a conduction path, between a line at a supply voltage and a common ground terminal of the temperature sensor, including a capacitor, a resistor and a reverse biased diode a junction temperature of which is to be sensed; a digital circuit coupled with the capacitor, the resistor and the diode, configured to compare a charge voltage of the capacitor with an upper threshold voltage and with a lower threshold voltage, and to generate in operation an output sense signal that switches to a first logic level when the charge voltage attains the lower threshold voltage and to a second logic level when the charge voltage attains the upper threshold voltage, the digital circuit being configured to connect the resistor electrically in parallel with the capacitor to discharge the capacitor when the output sense signal is at the second logic level, and to connect the capacitor so as to be charged by a reverse saturation current flowing throughout the reverse biased diode when the output sense signal is at the first logic level. | 04-30-2015 |
20150117495 | Systems and methods for on-chip temperature sensor - Various embodiments of the invention use the characteristics of BJTs to compute parameter values required to de-embed the effects of non-idealities including BJT's-mismatch in the reverse saturation current and process-dependent injection factor. In some embodiments, a temperature sensor circuit and method provide high temperature accuracy in a low-cost way by individually calibrating each part, thereby, eliminating the need to accurately measure temperature with a precision temperature sensor. | 04-30-2015 |
20150146761 | THERMAL HISTORY DEVICES, SYSTEMS FOR THERMAL HISTORY DETECTION, AND METHODS FOR THERMAL HISTORY DETECTION - Embodiments of the present disclosure include nanowire field-effect transistors, systems for temperature history detection, methods for thermal history detection, a matrix of field effect transistors, and the like. | 05-28-2015 |
20150308902 | OVERHEAT DETECTION CIRCUIT AND SEMICONDUCTOR DEVICE - Provided is an overheat detection circuit configured to accurately detect a temperature of a semiconductor device even at high temperature and thus avoid outputting an erroneous detection result. The overheat detection circuit includes: a PN junction element, being a temperature sensitive element; a constant current circuit configured to supply the PN junction element with a bias current; a comparator configured to compare a voltage generated at the PN junction element and a reference voltage; a second PN junction element configured to cause a leakage current to flow through a reference voltage circuit at high temperature; and a third PN junction element configured to bypass a leakage current of the constant current circuit at the high temperature. | 10-29-2015 |
20150338282 | REMOTE TEMPERATURE SENSING - In one example, a method includes determining, by a device, a plurality of voltage values that each correspond to a respective voltage drop across a remote p-n junction while the remote p-n junction is biased at different respective current levels, wherein each of the plurality of voltage values is a function of at least: one of the different respective current levels, a temperature of the remote p-n junction, and a series resistance between the device and the remote p-n junction. In this example, the method also includes, determining, by the device, an intermediate value based on a difference between at least three voltage values of the plurality of voltage values, wherein the intermediate value is not a function of the series resistance, and determining the temperature of the remote p-n junction based on the intermediate value such that the temperature is not a function of the series resistance. | 11-26-2015 |
20150346037 | INTEGRATED TEMPERATURE SENSOR - An integrated temperature sensor comprising a barrier layer connecting at least two conductive elements, wherein the barrier layer has a positive temperature coefficient. | 12-03-2015 |
20150346038 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a switching device; a first reflux diode connected in reverse parallel with the switching device; a current path connected in parallel with the first reflux diode; a second reflux diode inserted into the current path in series; and a temperature detection part configured to detect a temperature based on a differential voltage between a forward voltage of the first reflux diode and a forward voltage of the second reflux diode. A current density of the first reflux diode and a current density of the second reflux diode are different from one another. | 12-03-2015 |
20160011058 | INTEGRATED TEMPERATURE SENSOR FOR DISCRETE SEMICONDUCTOR DEVICES | 01-14-2016 |
20160116345 | System and Method for Temperature Sensing - According to an embodiment, a method of operating a measurement circuit includes biasing a sense transistor to conduct current through a first conduction channel in a first direction during a first mode, injecting a measurement current into a body diode of the sense transistor during a second mode, measuring a first voltage across the sense transistor when the measurement current is injected, and determining a temperature of the sense transistor based on the first voltage. When the measurement current is injected, it is injected in a second direction opposite the first direction. The sense transistor is integrated in a semiconductor body with a load transistor having a second conduction channel, and the first conduction channel and the second conduction channel are coupled to an input node. | 04-28-2016 |
20160146676 | SOLDER DEGRADATION INFORMATION GENERATION APPARATUS - A solder degradation information generation apparatus related to a motor drive circuit that includes a power supply, a converter, a smoothing capacitor, and an electric motor is disclosed. The solder degradation information generation apparatus includes a semiconductor element that forms an upper arm of the converter and is bonded to a substrate via a solder, the substrate being cooled by a coolant, a measuring unit configured to measure a temperature of the semiconductor element and a processing device that generates information indicating a degradation state of the solder based on a measurement result of the measuring unit that is obtained during a period in which the smoothing capacitor is charged. | 05-26-2016 |
20160187203 | OVERHEAT DETECTION CIRCUIT AND SEMICONDUCTOR DEVICE - Provided is an overheat detection circuit that is capable of quickly outputting an overheated state detection signal in an overheated state without outputting an unintended erroneous output caused by disturbance noise, such as momentary voltage fluctuations in the power supply. The overheat detection circuit includes: a temperature sensor; a comparison section; and a disturbance noise removal section configured to output an overheated state detection signal to an output section after a predetermined delay time has elapsed. The delay time is reduced in proportion to temperature. | 06-30-2016 |