| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 372004000 | LONG WAVELENGTH (E.G., FAR INFRARED) | 17 |
| 20080232406 | Optical continuum source including light generation beyond wavelength edges of continuum - An optical continuum source is formed that is used to generate both a continuum and one or more light peaks outside the bandwidth of the continuum. In particular, one or more fiber Bragg gratings exhibiting a resonant wavelength less than the short wavelength edge (or greater than the long wavelength edge) of a predetermined continuum are inscribed into a section of highly nonlinear fiber (HNLF) and used to generate the additional light peaks. Gratings may also be formed for areas along the fiber where the continuum spectral power density is essentially “zero”. It has been discovered that the use of a Bragg grating generates phase matching with the propagating optical signal, thus resulting in the creation of the additional peaks. | 09-25-2008 |
| 20080279227 | Method for Generating Terahertz Electromagnetic Waves by Using Coherent Phonons - In a method for generating a terahertz electromagnetic wave by using coherent phonons in a quantum structure, high density of coherent phonons acting as a radiation source of the terahertz electromagnetic wave are obtained by exciting the inter-band transitions in a quantum structure under the condition that the energy difference between two inter-band transitions in the quantum structure is resonated with the energy of the coherent phonons, and the terahertz electromagnetic wave is generated by the oscillatory polarizations of the coherent phonons. High density of coherent phonons may be created through the elementary excitation generated by using instantaneous laser pulses. A quantum well structure is effective as the quantum structure, and a scattering process of coherent phonon may be suppressed by confining coherent LO phonons in a well layer. Under the condition that the difference of energies between the heavy-hole and light-hole exitons in a quantum well structure agrees with the energy of LO phonons and both the exitons are created simultaneously, high density of coherent phonons may be generated. With this method, a terahertz electromagnetic wave can be effectively and strongly emitted from the coherent phonons. | 11-13-2008 |
| 20090003390 | Optimal Colors for a Laser Pico-Beamer - A laser beam projector employs a light engine including a semiconductor laser platform ( | 01-01-2009 |
| 20090103574 | LASER MODULE PACKAGE AND DISPLAY APPARATUS USING THE SAME - Disclosed are a laser module apparatus and a display apparatus using the same. In accordance with an embodiment of the present invention, a laser module package which generates a green laser beam can include a pumping light source, configured to generate and output a pump beam; a laser medium, configured to receive the pump beam and output an infrared beam; an optical crystal, configured to receive the infrared beam and output a laser beam having a green wavelength band; and a micro heater, configured to be thermally coupled to the pumping light source and control an operation temperature of the pumping light source to be maintained to a predetermined target temperature. | 04-23-2009 |
| 20090135857 | FREQUENCY-TUNABLE TERAHERTZ LIGHT SOURCE DEVICE - Provided is a frequency-tunable terahertz light source device. The frequency-tunable terahertz light source device satisfies a Littrow diffraction condition at a wavelength and simultaneously satisfies a Littman-Metcalf diffraction condition at another wavelength using a double diffraction grating having two grating periods. Thus, oscillations simultaneously occur at the two different wavelengths, such that a terahertz wave can be stably generated by beating of the two oscillation wavelengths. In addition, the frequency-tunable terahertz light source device can readily change a frequency up to several terahertz and can be fabricated in a small size. | 05-28-2009 |
| 20090285244 | MID-IR LASER FOR GENERATION OF ULTRASOUND - A compact high average power mid infrared range laser for ultrasound inspection. The laser comprises one of a Nd:YAG or Yb:YAG laser pumped by a diode at 808 nm to produce a 1 micron output beam. The 1 micron output beam is directed to an optical parametric oscillator where the beam wavelength is converted to 1.94 microns and conveyed to a mid infrared emission head. The emission head comprises one of a Ho:YAG or Ho:YLG laser optically coupled with a second optical parametric oscillator. The second optical parametric oscillator forms a generation output beam for creating ultrasonic displacements on a target. The generation output beam wavelength ranges from about 3 to about 4 microns, and can be 3.2 microns. | 11-19-2009 |
| 20100135337 | METHODS AND APPARATUS FOR GENERATING TERAHERTZ RADIATION - Apparatus and methods for generating radiation via difference frequency generation (DFG). In one exemplary implementation, a quantum cascade laser (QCL) has a significant second-order nonlinear susceptibility (χ | 06-03-2010 |
| 20100195675 | Terahertz and millimeter wave source - The present invention relates generally to a terahertz and millimeter wave source, and more particularly, but not exclusively, to structures for coupling the terahertz electromagnetic waves out of the source. | 08-05-2010 |
| 20100220750 | Terahertz Laser Components And Associated Methods - A system generates FIR radiation. An electron source generates an electron beam. A first horn interacts with the electron beam to produce the FIR radiation. A second grating horn receives the electron beam from the first horn and emits it as a collimated free wave or Smith-Purcell radiation. | 09-02-2010 |
| 20100232457 | LASER DEVICE - Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion where the surface current is maximum in a surface plasmon waveguide to stabilize a potential difference between a first cladding and a second cladding in the surface plasmon waveguide. | 09-16-2010 |
| 20100246609 | Semiconductor Lasing Device - The present application provides a semiconductor Fabry-Perot dual mode lasing device having terahertz characteristics resulting in significant advantages over the prior art including for example operation at room temperatures and the absence of re-growth processing requirements. | 09-30-2010 |
| 20110090926 | LASER DEVICE - Provided is a long wavelength laser of which the operating point is stabilized and the laser oscillation is stabilized. The long wavelength laser comprises a resistor element provided to a portion where the surface current is maximum in a surface plasmon waveguide to stabilize a potential difference between a first cladding and a second cladding in the surface plasmon waveguide. | 04-21-2011 |
| 20120147907 | TERAHERTZ WAVE GENERATOR - Disclosed is a terahertz wave generator which includes a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights; and a photo mixer formed on the same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light. | 06-14-2012 |
| 20140254615 | LASER DEVICE - A laser device comprises a waveguide including a resonance structure for causing electromagnetic waves to resonate. The waveguide by turn comprises a gain medium for generating electromagnetic waves, a first negative permittivity medium arranged electrically in contact with the gain medium, a second negative permittivity medium arranged electrically in contact with the gain medium at the side opposite to the first negative permittivity medium so as to dispose the gain medium between the first and second negative permittivity mediums, and lateral structures of a positive permittivity medium arranged to be in contact with lateral surfaces of the gain medium and sandwiched between the first and second negative permittivity mediums. The waveguide has a section in which the width w of the gain medium sandwiched between the lateral structures is not greater than twice of the thickness h of the lateral structures sandwiched between the first and second negative permittivity mediums. | 09-11-2014 |
| 20160036200 | OSCILLATION DEVICE - An oscillation device that produces an oscillating electromagnetic wave includes a resonator, a conducting wall, and a first conductor layer. The resonator includes a waveguide structure for resonating the electromagnetic wave and a dielectric layer. The waveguide structure includes a second conductor layer, a gain medium disposed on the second conductor layer, and a third conductor layer disposed on the gain medium. The dielectric layer is disposed on the second conductor layer and along a side of the gain medium. The conducting wall is separated from the gain medium by the dielectric layer and is disposed at a positions of a node of an electric field of a standing electromagnetic wave in the waveguide structure in the resonance axis direction. An optical distance between the side of the gain medium and the conducting wall is equal to or smaller than one fourth of a wavelength of the electromagnetic wave. | 02-04-2016 |
| 20160064901 | NITRIDE SEMICONDUCTOR QUANTUM CASCADE LASER - A terahertz quantum cascade laser (THz-QCL) element operable at an unexplored frequency is obtained. A crystal of a nitride semiconductor is used to fabricate a repeated set of unit structures into a super lattice. Each unit structure includes a first barrier layer, a first well layer, a second barrier layer, and a second well layer disposed in this order. An energy level structure for electrons under a bias electric field has a mediation level, an upper lasing level, and a lower lasing level. The energy value of the mediation level is close to the energy value of either an upper lasing level or a lower lasing level, each belonging to either the unit structure or the other unit structure adjacent thereto, and is separated from the energy value of the other level by at least the energy value of a longitudinal-optical (LO) phonon exhibited by the crystal. | 03-03-2016 |
| 20160141835 | LAYER ARRANGEMENT AND METHOD FOR FABRICATING THEREOF - According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer. | 05-19-2016 |
