| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 365106000 | RADIANT ENERGY | 28 |
| 20080212357 | Simultaneous read circuit for multiple memory cells - A memory device including a simultaneous read circuit design for multiple memory cells on a single interconnect using a fast fourier transform analysis circuit. The simultaneous read circuit can be used with any memory type storing information as an energy-absorbing state. | 09-04-2008 |
| 20100034007 | QUANTUM OPTICAL DATA STORAGE - The present invention provides a quantum optical data storage protocol, whose storage time is lengthened by spin population decay time from several minutes to several hours. The quantum data storage includes a first ground state and a second ground state which are closely spaced each other in energy level or degenerated and to forbid two-photon transitions between the first and second ground states; an excited state which has a spin inhomogeneous broadening and to allow two-photon transitions between the first ground state and the second ground sate via the excited state and allow a spin coherence; an auxiliary state for forbidding two-photon transitions between the first and second ground states via the auxiliary state and allowing a transition from/to the excited state; wherein a spin coherence induced by a transition of two photons from the first ground state and the second state to the excited state is transited to the auxiliary state so that a phase decay of the spin coherence is prevented and data is stored as the phase of the spin coherence. | 02-11-2010 |
| 20100061138 | PHOTONIC MEMORY DEVICE, DATA STORING METHOD USING THE PHOTONIC MEMORY DEVICE AND PHOTONIC SENSOR DEVICE - Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon. | 03-11-2010 |
| 20110299317 | INTEGRATED CIRCUIT HEATING TO EFFECT IN-SITU ANNEALING - In a system having a memory device, an event is detected during system operation. The memory device is heated to reverse use-incurred degradation of the memory device in response to detecting the event. In another system, the memory device is heated to reverse use-incurred degradation concurrently with execution of a data access operation within another memory device of the system. In another system having a memory controller coupled to first and second memory devices, data is evacuated from the first memory device to the second memory device in response to determining that a maintenance operation is needed within the first memory device. | 12-08-2011 |
| 20130163307 | Memory Device Correcting the Effect of Collisions of High-Energy Particles - A memory device automatically correcting the effect of collisions of high-energy particles, comprising at least one memory cell, and further comprising: retention means for retaining, for a determined period, a single copy of the stored value stored in said memory cell; detection means for detecting a change of state of said memory cell, by comparing the stored value stored in said memory cell with the value in retention in said retention means; and management means suitable for determining whether a detected change of state of said memory cell is due to a high-energy particle and, in which case, to automatically command a reloading of the stored value stored in said retention means into said memory cell. | 06-27-2013 |
| 20130279235 | PHOTON ECHO QUANTUM MEMORY AND METHOD - A quantum memory and method are proposed. The quantum memory includes an ensemble of atoms embedded in a storage medium and at least one light source for emitting towards the storage medium first, second and third light pulses, the first light pulse carrying information to be stored. The at least one light source is adapted for emitting second and third light pulses which are such that a photon echo substantially carrying information stored by the first light pulse is emitted by the ensemble of atoms after emission of the third light pulse. | 10-24-2013 |
| 20130301333 | Photonic Quantum Memory - A photonic quantum memory is provided. The photonic quantum memory includes entanglement basis conversion module configured to receive a first polarization-entangled photon pair and to produce a second entangled photon pair. The second polarization-entangled photon pair can he a time-bin entangled or a propagation direction-entangled photon pair. The photonic quantum memory further includes a photonic storage configured to receive the second entangled photon pair from the basis conversion module and to store the second entangled photon pair. | 11-14-2013 |
| 20140009995 | Protection of Stored Data Using Optical Emitting Elements - An integrated circuit device ( | 01-09-2014 |
| 20150124513 | LIGHT INCIDENT ANGLE CONTROLLABLE ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF - Disclosed herein is a method of changing characteristics of an electronic device, including the steps of: applying light to an electronic device through a plurality of media having different refractive indexes from each other, the electrical characteristics of the electronic device being changed depending on the amount of incident light; and changing an incident angle of light applied the electronic device to adjust the amount of incident light. There is provided a method of providing light incident angle dependency by a simple procedure of accumulating additional media in various electronic devices. In the method, the light incident angle selectivity of the electronic device can be maintained even when the inclination angle of the device is changed depending on the axis parallel to the incident direction of light even though the incident direction thereof is fixed. This means that the performance of the device can be controlled only by changing the inclination angle of the device without greatly changing the dynamic state of the device. Further, since the movement speed of photons is higher than that of electrons and the signal interference of photons is lower than that of electrons, an additional effect of increasing the operating speed of the device or decreasing the size of the device can be expected. | 05-07-2015 |
| 20150302926 | OPTICAL RECORDING DEVICE, OPTICAL RECORDING METHOD, AND INFORMATION RECORDING MEDIUM - In a recording technique in which a plurality of light spots are simultaneously formed by using an ultra-short pulse laser and a spatial phase modulator, and a plurality of recording dots having refractive indexes different from those of the vicinities thereof are formed inside a recording medium, it is hard to make recording quality and a recording density compatible. Therefore, a plurality of dots are recorded at a predetermined dot pitch, and then other dots are recorded between the recorded dots. | 10-22-2015 |
| 20150357039 | THREE DIMENSIONAL OPTO-MAGNETIC DATA STORAGE SYSTEM AND METHOD - The present invention relates to a data storage system and a method which has high storing capacity and high data access rate and low power consumption. The said data storage system essentially includes at least two optical layers, and which have at least one active layer in which the light is generated, at least one lower electric contact enabling the electric energy to be transferred to the active layer and at least one upper electric contact, at least two reflecting layers reflecting the light generated in the active layer; at least one thermal insulator; at least one magnetic layer, which has at least one storage bit, at least one lower buffer bit, at least one upper buffer bit enabling the data to be transferred up; at least one transparent layer and transfers the light generated by the optical unit to the magnetic layer. | 12-10-2015 |
| 365108000 | Liquid crystal | 2 |
| 20090116276 | MEMORY DEVICE, DATA RECORDING METHOD AND IC TAG - A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting with the first electrode group. | 05-07-2009 |
| 20150098262 | SEMICONDUCTOR MEMORY DEVICE HAVING RAY DETECTOR, AND ELECTRONIC DEVICE INCLUDING THE SAME, AND OPERATING METHOD THEREOF - A semiconductor memory device includes a first memory region, a second memory region suitable for storing the same data as the first memory region, and a ray detection circuit suitable for detecting an incident ray to the first memory region, wherein a data stored in the second memory region is copied into the first memory region when the incident ray is detected. | 04-09-2015 |
| 365111000 | Electroluminescent | 2 |
| 20090040805 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation. | 02-12-2009 |
| 20100208507 | LUMINESCENCE DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a luminescent device and a method of manufacturing the same. The luminescent device includes a charge trapping layer having bistable conductance and negative differential resistance (NDR) characteristics, and an organic luminescent layer electrically connected to the charge trapping layer. | 08-19-2010 |
| 365112000 | Photoconductive | 4 |
| 20100097838 | OPTICAL SENSOR ELEMENT, IMAGING DEVICE, ELECTRONIC EQUIPMENT AND MEMORY ELEMENT - An optical sensor element has a gate electrode opposed to a semiconductor layer made of an oxide semiconductor via a gate insulating film, source and drain electrodes being connected to the semiconductor layer, wherein the amount of light received by the semiconductor layer is read out as a drain current which changes in a non-volatile manner relative to a gate voltage. | 04-22-2010 |
| 20100290264 | OPTOELECTRONIC MEMORY DEVICES - A structure. The structure includes a substrate, a resistive/reflective region on the substrate, and a light source/light detecting and/or a sens-amp circuit configured to ascertain a reflectance and/or resistance change in the resistive/reflective region. The resistive/reflective region includes a material having a characteristic of the material's reflectance and/or resistance being changed due to a phase change in the material. The resistive/reflective region is configured to respond, to an electric current through the resistive/reflective region and/or a laser beam projected on the resistive/reflective region, by the phase change in the material which causes a reflectance and/resistance change in the resistive/reflective region from a first reflectance and/or resistance value to a second reflectance and/or resistance value different from the first reflectance and/or resistance value. | 11-18-2010 |
| 20110032743 | Colloidal-Processed Silicon Particle Device - Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles. | 02-10-2011 |
| 20110242873 | Photo-Responsive Memory Resistor and Method of Operation - An optically-controlled memory resistor, comprising (1) a memory resistor comprising a first electrode, a second electrode, and a photo-responsive active layer disposed between the first and second electrodes, and (2) a light source in cooperation with the memory resistor, the light source configured to controllably illuminate the memory resistor for affecting a resistance state exhibited by the memory resistor. Also disclosed is a method for operating a memory resistor, the method comprising changing a resistance state of the memory resistor in response to an application of a plurality of photons to the memory resistor. | 10-06-2011 |
| 365113000 | Amorphous | 2 |
| 20110044086 | OPTICAL MEMORY DEVICE AND METHOD THEREFOR - A nonvolatile memory device and method using phase changes in a substrate to alter optical properties of the substrate for the purpose of data storage. The memory device includes a substrate containing a phase change material having phases comprising amorphous and crystalline phases. The phase change material has optical properties that change depending on whether the phase change material is in the amorphous phase or the crystalline phase. The memory device is further equipped with one or more devices that generate light and transmit the light into the substrate, and one or more devices that cause the phase change material to change between the amorphous and crystalline phases thereof. At least one optical sensing device detects light that passes into the phase change material to the optical sensing device and generates electrical signals based thereon, which are converted into bit values if they exceed a threshold. | 02-24-2011 |
| 20110273920 | SWITCHING ELEMENT AND APPLICATION OF THE SAME - A micro-switching element provided with a first electrode | 11-10-2011 |
| 365114000 | Semiconductive | 6 |
| 20100039848 | NON-VOLATILE PROGRAMMABLE OPTICAL ELEMENT EMPLOYING F-CENTERS - A non-volatile programmable electro-optical element alters absorption characteristics of an optical medium that comprises a doped transition metal oxide material including F-centers. The F-centers are electrostatically moved into or out of the regions containing a wavefunction of an optical beam. A specific F-center profile in the transition metal oxide material may be programmed into the optical medium. The F-center profile alters an absorption profile within the optical medium. The spectral range for transmission of electromagnetic radiation in the optical medium may be tailored by the F-centers. Once the absorption profile is set by an electrical signal, the optical element maintains its state even when the electrical signal is turned off. Thus, the programming node may be disconnected from a power supply network, thereby enabling a low power operation of the electro-optical element. The inventive electro-optical element may be employed for both the visible and the infrared wavelength spectrum. | 02-18-2010 |
| 20110122673 | SEMICONDUCTOR DEVICE INCLUDING MEMORY CELL - A nonvolatile memory includes a memory cell including a first transistor and a second transistor. The first transistor includes a first channel, a first gate electrode, a first source electrode, and a first drain electrode. The second transistor includes a second channel made of oxide semiconductor material, a second gate electrode, a second source electrode, and a second drain electrode. One of the second source electrode and the second drain electrode is electrically connected to the first gate electrode. Data writing in the memory cell is done by raising the potential of a node between one of the second source electrode and the second drain electrode and the first gate electrode. Data erasure in the memory cell is done by irradiating the second channel with ultraviolet light and lowering the potential of the node. | 05-26-2011 |
| 20120250390 | MEMORY CELL AND MEMORY DEVICE INCLUDING THE SAME - A memory cell includes a light emitting unit, a phosphorescent layer, a polarization filter and a light detecting unit. The light emitting unit selectively generates a first light signal in response to a write data. The phosphorescent layer generates a second light signal using an energy absorbed from the first light signal. The polarization filter either passes the second light signal to output the passed second light signal as a third light signal or blocks out the second light signal in response to the write data. The light detecting unit generates a read data by detecting the third light signal. | 10-04-2012 |
| 20160020579 | Transistor laser optical switching and memory techniques and devices - A ring cavity light-emitting transistor device, including: a planar semiconductor structure of a semiconductor base layer of a first conductivity type between semiconductor collector and emitter layers of a second conductivity type; base, collector, and emitter metalizations respectively coupled with the base layer, said collector layer, and said emitter layer, the base metalization including at least one annular ring coupled with a surface of the base layer; and an annular ring-shaped optical resonator in a region of the semiconductor structure generally including the interface of the base and emitter regions; whereby application of electrical signals with respect to the base, collector, and emitter metalizations causes light emission in the base layer that propagates in the ring-shaped optical resonator cavity. | 01-21-2016 |
| 365115000 | Diodes | 2 |
| 20100061139 | RANDOM ACCESS MEMORY CIRCUIT - A random access memory circuit includes a plurality of pixels, each having a light sensitive area and a light blocking layer arranged over at least each of the light sensitive areas. In an alternative embodiment, the circuit includes a plurality of memory elements for storing data. Each memory element may comprise a bit node formed between a photodiode, having a light arranged over the photodiode, and a switching element, where data may be stored. The circuit may also include a plurality of reading and writing circuits for reading and writing data to and from the memory cells. | 03-11-2010 |
| 20130314971 | METHODS INVOLVING MEMORY WITH HIGH DIELECTRIC CONSTANT ANTIFUSES ADAPTED FOR USE AT LOW VOLTAGE - Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective. | 11-28-2013 |
| 365117000 | Ferroelectric | 1 |
| 20130033918 | METHOD AND STRUCTURE FOR ULTRA-HIGH DENSITY, HIGH DATA RATE FERROELECTRIC STORAGE DISK TECHNOLOGY USING STABILIZATION BY A SURFACE CONDUCTING LAYER - A electrometric access head includes a supporting substrate and a plurality of read elements mounted on the supporting substrate. Each read element includes an electrometric sensor for detection of a sign of polarization of domains within a ferroelectric data layer of a ferroelectric storage medium. The ferroelectric data layer serves as a layer for storing information as bits defined by the signs of polarization of domains within the ferroelectric data layer, each polarized domain including a volume dipole polarization within the ferroelectric data layer and including an area of bound charge on and adjacent to a surface of the ferroelectric data layer. | 02-07-2013 |
