Entries |
Document | Title | Date |
20080212372 | Nonvolatile memory devices that support virtual page storage using odd-state memory cells and methods of programming same - A nonvolatile memory array includes first and second blocks of three-state memory cells therein. These first and second blocks are configured to operate individually as first and second blocks of physical memory cells, respectively, and collectively as an additional block of virtual memory cells. The first and second blocks of memory cells and the additional block of virtual memory cells may be read independently to provide a total of three blocks of read data. | 09-04-2008 |
20080239812 | NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM - According to an embodiment, a nonvolatile semiconductor memory system includes: a nonvolatile semiconductor memory; and a memory controller having: a memory interface unit that inputs commands to the nonvolatile semiconductor memory and inputs or outputs data between the nonvolatile semiconductor memory; a memory that stores writing information indicating a memory cell transistor that is written the latest in each of the NAND cell units; and a processor that sets a read voltage based on the writing information to readout data from the memory cell transistors connected to a first word line; wherein a row controller is configured to set a plurality of levels of the read voltage to be applied to the first word line, with respect to one threshold for discriminating data stored in a memory cell transistors. | 10-02-2008 |
20080253185 | Non-Volatile Memory and Method with Control Gate Compensation for Source Line Bias Errors - Source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits. During sensing the source of a memory cell is erroneously biased by a voltage drop across the resistance and results in errors in the applied control gate and drain voltages. This error is minimized when the applied control gate and drain voltages have their reference point located as close as possible to the sources of the memory cells. In one preferred embodiment, the reference point is located at a node where the source control signal is applied. When a memory array is organized in pages of memory cells that are sensed in parallel, with the sources in each page coupled to a page source line, the reference point is selected to be at the page source line of a selected page via a multiplexor. | 10-16-2008 |
20080266960 | NON-VOLATILE MEMORY AND MANUFACTURING METHOD AND OPERATING METHOD THEREOF AND CIRCUIT SYSTEM INCLUDING THE NON-VOLATILE MEMORY - A non-volatile memory including a memory cell is described. The memory cell includes a first unit, a semiconductor layer, a second unit, and a doped region. The first unit includes a first gate, a first charge trapping layer, and a second charge trapping layer. The first and the second charge trapping layer are respectively disposed on both sides of the first gate. The semiconductor layer is disposed on the first unit. The second unit is disposed on the semiconductor layer and is in mirror symmetry to the first unit. The second unit includes a second gate and a third and a fourth charge trapping layer respectively disposed on both sides of the second gate. The doped region is disposed at both sides of the semiconductor layer and serves as a common source/drain region of both the first and the second unit. | 10-30-2008 |
20080266961 | NON-VOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING IN THE SAME - A non-volatile memory device according to one example embodiment of the present invention includes a page buffer configured to have a first register for receiving data and storing temporarily the received data to be inputted to a pair of first bit lines, a second register coupled selectively to the first register and for storing temporarily data to be inputted to a pair of second bit lines, and a third register for storing temporarily specific data in accordance with a level of the data stored in the first register; a first bit line selecting circuit configured to couple selectively a given bit line of the first bit lines to the first register; and a second bit line selecting circuit configured to couple selectively a certain bit line of the second bit lines to the second register. | 10-30-2008 |
20080266962 | FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM - A flash memory device and a flash memory system are disclosed. The flash memory device includes a first non-volatile memory including a plurality of page data cells, storing page data, and reading and outputting the stored page data when a read command is applied from an external portion; and a second non-volatile memory including a plurality of spare data cells respectively adjacent to the plurality of page data cells, storing spare data, scanning the spare data and temporarily storing corresponding information when a file system is mounted, reading and outputting the stored spare data when the read command is applied. | 10-30-2008 |
20080291731 | Methods For Optimizing Page Selection In Flash-Memory Devices - The present invention discloses methods for storing data in a flash-memory storage device, the method including the steps of: receiving, by the device, primary data to be stored in the device and to be read from the device at a primary reading speed; storing at least part of the primary data only in fast pages in the device, wherein the fast pages are located in multi-level cells of the device; designating, by the device, secondary data to be read from the device at a secondary reading speed, wherein the secondary reading speed is slower than the primary reading speed; and storing at least part of the secondary data only in slow pages in the device, wherein the slow pages are located in the multi-level cells. Preferably, the method further includes the step of: moving the secondary data from a previously-stored area in the device to the slow pages. | 11-27-2008 |
20090003066 | Non-volatile memory system and programming method of the same - A programming method for a non-volatile memory system includes storing multi-page program data and buffering the multi-page program data from a page buffer to a memory block and programming the multi-page program data through a predetermined number of program operations. The programming the multi-page program data includes programming memory cells of the memory block using a first threshold voltage lower than a desired threshold voltage based on the multi-page program data sequentially buffered by the page buffer in units of pages and programming the memory cells using the desired threshold voltage by increasing a threshold voltage of the memory cells by a predetermined level at each successive program operation. | 01-01-2009 |
20090010063 | NAND TYPE FLASH MEMORY AND WRITE METHOD OF THE SAME - A NAND type flash memory includes first to third memory cell transistors having current paths connected in series between one end of a current path of each of first and second selection transistors, and each having a control gate and a charge storage layer, the first and second memory cell transistors being adjacent to the first and second selection transistors, the third memory cell transistor being positioned between the first and second memory cell transistors, the third memory cell transistor holding data having not less than three bits, the first memory cell transistor holding 2-bit data in which middle and upper pages is written by skipping a lower page, and a lower page verify voltage being set when writing the middle page, and a middle page verify voltage is set when writing the upper page, changing a position of a threshold distribution of the first memory cell transistor. | 01-08-2009 |
20090067244 | NONVOLATILE MEMORY AND METHOD FOR ON-CHIP PSEUDO-RANDOMIZATION OF DATA WITHIN A PAGE AND BETWEEN PAGES - Features within an integrated-circuit memory chip enables scrambling or randomization of data stored in an array of nonvolatile memory cells. In one embodiment, randomization within each page helps to control source loading errors during sensing and floating gate to floating gate coupling among neighboring cells. Randomization from page to page helps to reduce program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. In another embodiment, randomization is implemented both within a page and between pages. The scrambling or randomization may be predetermined, or code generated pseudo randomization or user driven randomization in different embodiments. These features are accomplished within the limited resource and budget of the integrated-circuit memory chip. | 03-12-2009 |
20090067245 | SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH MOS TRANSISTOR HAVING CHARGE ACCUMULATION LAYER AND CONTROL GATE AND DATA WRITE METHOD OF NAND FLASH MEMORY - A semiconductor memory device includes a memory cell group, a selection transistor, a page buffer, and a row decoder. The memory cell group includes memory cell transistors connected in series. The selection transistor is connected to the memory cell transistor. The page buffer is adopted to apply first and second voltages to the bit lines connected to the memory cell transistors in which the “0” data and “1” data is to be programmed respectively, when the selection transistor is turned on, in a write operation. The page buffer is adopted to put the bit line into electrically floating after the first voltage and the second voltage are applied. The row decoder is adopted to apply a third voltage to a semiconductor layer on which the memory cell transistors are formed, and apply a program voltage to the selected word line when the bit line is in the electrically floating. | 03-12-2009 |
20090091981 | NONVOLATILE MEMORY DEVICE WITH MULTIPLE PAGE REGIONS, AND METHODS OF READING AND PRECHARGING THE SAME - A nonvolatile memory device includes a memory cell array having multiple memory cells arranged at intersections of word lines and bit lines, a first page region configured with at least two adjacent memory cells coupled to a word line, and a second page region configured with at least two adjacent memory cells coupled to the word line. The nonvolatile memory devices also includes a first common source line connecting with the memory cells of the first page region, and a second common source line connecting with the memory cells of the second page region. The first and second common source lines are controlled independently. | 04-09-2009 |
20090109756 | MEMORY DEVICE WITH VARIABLE TRIM SETTING - A memory device includes a memory array including a plurality of cells. The cells are divided into a plurality of subsets. Each subset has at least one associated trim parameter. The trim parameter for each subset is stored in the memory array within the associated subset. Circuitry is operable to program at least a portion of a selected subset using the associated trim parameter. A method for operating a memory device includes storing at least one trim parameter for each of a plurality of subsets of a memory array in the memory device within each of the subsets. At least a portion of a selected subset is programmed based on the at least one trim parameter associated with the selected subset. | 04-30-2009 |
20090122612 | WIRED-OR TYPED PAGE BUFFER HAVING CACHE FUNCTION IN A NONVOLATILE MEMORY DEVICE AND RELATED METHOD OF PROGRAMMING - Disclosed is a page buffer having a wired-OR type structure and a cache function which is adapted for use in a nonvolatile semiconductor memory device and a method of programming same. The page buffer embeds the cache latch block in relation to the cache function. Moreover, the nonvolatile semiconductor memory device includes an output driver enabling an internal output line to be unidirectional driven, thereby enabling a program-verifying operation using the wired-OR scheme. | 05-14-2009 |
20090147583 | SEMICONDUCTOR MEMORY DEVICE HAVING MAT STRUCTURE - A semiconductor memory device having a mat structure. The semiconductor memory device may comprise a first mat having a plurality of first memory cells and a second mat having a plurality of second memory cells. The first and second mats are formed in a single well region. The first and second mats may share a first well of a first conductivity type, and the first well may be formed in a second well of a second conductivity type. The second well may be formed in a semiconductor substrate of the first conductivity type. As a result, the semiconductor memory device according to embodiments of the present invention provide for higher integration density. | 06-11-2009 |
20090161433 | Regulation of Source Potential to Combat Cell Source IR Drop - Techniques are presented for dealing with possible source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits of a non-volatile memory. The error is caused by a voltage drop across the resistance of the source path to the chip's ground when current flows. For this purpose, the memory device includes a source potential regulation circuit, including an active circuit element having a first input connected to a reference voltage and having a second input connected as a feedback loop that is connectable to the aggregate node from which the memory cells of a structural block have their current run to ground. A variation includes a non-linear resistive element connectable between the aggregate node and ground. | 06-25-2009 |
20090161434 | Read, Verify Word Line Reference Voltage to Track Source Level - A non-volatile memory device has individual pages of memory cells to be sensed in parallel. The memory device includes a source level tracking circuit coupled to receive a predetermined word line voltage from a word line voltage supply and the voltage level at the aggregate source node of one or more pages and coupled to provide to word lines of the memory an output voltage during the sensing operation, where the source level tracking circuit includes an op amp whereby the output voltage is the word line voltage offset by an amount to track the voltage level at the aggregate node and compensate for source bias errors due to a finite resistance in the ground loop. | 06-25-2009 |
20090161435 | NON-VOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - When performing a program operation, a non-volatile memory device comprising a multi-plane performs a cache write operation by employing a page buffer circuit of a plane that does not perform the program operation. A data line mux transfers an externally input first data to a page buffer unit of a plane, which will be programmed, according to a plane select signal, transfers a second data to a page buffer unit of a plane on which a program operation is not performed, while the program of the selected plane is performed, and after the first data is programmed, provides a data transfer path between one page buffer unit and the other page buffer unit according to a data transfer control signal. | 06-25-2009 |
20090168527 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a memory cell array having a plurality of word lines and a plurality of bit lines, and at least first and second page buffers to which the plurality of bit lines are connected. The plurality of word lines are divided into first and second word lines and the first and second word lines are arranged in positions corresponding to the at least first and second page buffers. | 07-02-2009 |
20090168528 | FLASH MEMORY DEVICE AND DATA I/O OPERATION METHOD THEREOF - A flash memory device comprises a memory cell array, an input buffer unit, an output driver unit, first and second page buffer units, and first and second data handling units. The memory cell array includes two or more memory banks. During a data input operation, the first and second data handling units respectively receive first and second input data from the input buffer unit, and transfer the first and second input data to the first and second page buffers alternately after receiving the external address signals. During a data output operation, the first and second data handling units respectively receive first and second output data from the first and second page buffer units, and transfer the first and second input data to the output driver unit alternately after receiving the external address signals, so that the output driver unit outputs the first and second input data to the external device alternately. | 07-02-2009 |
20090180323 | Nonvolatile memory device, program method thereof, and memory system including the same - A nonvolatile memory device may include a memory cell array adapted to store tail-bit flag information indicating tail-bit memory cells, and a tail-bit controller adapted to calibrate a program start voltage of normal memory cells and a program start voltage of the tail-bit memory cells independently based upon the tail-bit flag information. | 07-16-2009 |
20090185423 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell array including a plurality of blocks each including a memory cell unit, and a selection transistor which selects the memory cell unit, and a row decoder including a first block selector and a second block selector each of which includes a plurality of transfer transistors which are formed to correspond to the plurality of blocks and arranged adjacent to each other in a word-line direction wherein the diffusion layers are formed to oppose each other in the first block selector and the second block selector, and a width between the diffusion layers of the first block selector and the second block selector adjacent to each other in the word-line direction is made larger than a width between the diffusion layers in each of the first block selector and the second block selector adjacent to each other in the word-line direction. | 07-23-2009 |
20090185424 | DECODING CONTROL WITH ADDRESS TRANSITION DETECTION IN PAGE ERASE FUNCTION - Circuits and methods are provided for controlling multi-page erase operations in flash memory. The page address of each address of a multi-page erase operation is latched in wordline decoders. A page select reset generator circuit processes the block addresses of each address of the multi-page erase operation. In the event the addresses relate to pages in different blocks, then previously latched page addresses are reset. This avoids the incorrect circuit operation that will result should a multi-page erase operation include multiple pages in different blocks. | 07-23-2009 |
20090196103 | NON-VOLATILE MEMORY DEVICE HAVING CONFIGURABLE PAGE SIZE - A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted. | 08-06-2009 |
20090201735 | NON-VOLATILE MEMORY APPARATUS FOR CONTROLLING PAGE BUFFER AND CONTROLLING METHOD THEREOF - A non-volatile memory apparatus for controlling a page buffer includes a page buffer configured to include a plurality of buffer stages, each buffering input/output data of cell arrays in units of predetermined number of bits, and a control unit configured to selectively activate one of the plurality of buffer stages when a burst mode as a synchronous mode is activated. | 08-13-2009 |
20090201736 | INCREASED NAND FLASH MEMORY READ THROUGHPUT - A method of reading sequential pages of flash memory from alternating memory blocks comprises loading data from a first page into a first primary data cache and a second page into a second primary data cache simultaneously, the first and second pages loaded from different blocks of flash memory. Data from the first primary data cache is stored in a first secondary data cache, and data from the second primary data cache is stored in a second secondary data cache. Data is sequentially provided from the first and second secondary data caches by a multiplexer coupled to the first and second data caches. | 08-13-2009 |
20090237998 | Adaptive Algorithm in Cache Operation with Dynamic Data Latch Requirements - A non-volatile memory can perform a first operation (such as a write, for example) on a designated group of one or more addressed pages using a first set of data stored in the corresponding set of data latches and also receive a request for a second operation (such as a read, for example) that also uses some of these corresponding data latches with a second set of data. During the first operation, when at least one latch of each set of the corresponding become available for the second operation, the memory whether there are a sufficient number of the corresponding set of data latches to perform the second operation during the first operation; if not, the second operation is delayed. The memory subsequently can perform the second operation during the first operation when a sufficient number of latches become available; and if, in response to determining whether there are a sufficient number of the corresponding set of data latches to perform the second operation it is determined that there are a sufficient number, performing the second operation during the first operation. | 09-24-2009 |
20090237999 | Different Combinations of Wordline Order and Look-Ahead Read to Improve Non-Volatile Memory Performance - For a non-volatile memory storing three or more bits per cell, pages of data are written in an order where more than one, but less than all of the logical pages that a physical page along a wordline can store are written concurrently. More than one, but less than all of the logical pages that a physical page along a wordline can store are then written concurrently on an adjacent wordline. The process then comes back to the first wordline and writes at least one more logical page. A process is also described where one or more logical pages are written into a physical page along a wordline, after which one or more logical pages are written into a physical page along an adjacent wordline. A read operation is then performed on the first wordline and the resultant read is corrected based on the result of programming the adjacent wordline. This corrected read is then used in writing at least one more logical page in a second programming operation on the first wordline. | 09-24-2009 |
20090285025 | Method of Controlling a Program Control of a Flash Memory Device - A flash memory device and method of controlling a program operation thereof, includes page buffers divided into a predetermined number of groups and a program operation is performed on a group basis. | 11-19-2009 |
20090310413 | REVERSE ORDER PAGE WRITING IN FLASH MEMORIES - To store, in a memory block whose word lines are written successively in a word line writing order, a plurality of data pages that are ordered by logical page address, the pages are written to the word lines so that every page that is written to any one of the word lines has a higher logical page address than any page that is written to a subsequently written word line, regardless of the sequence in which the pages are received for writing. Alternatively, the pages are written to the word lines so that for every pair of written word lines, the word line of the pair that is earlier in the writing order has written thereto a page having a higher logical page address than at least one page written to the other word line of the pair. | 12-17-2009 |
20100008142 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device comprises a page buffer unit, first to k | 01-14-2010 |
20100027339 | PAGE BUFFER AND METHOD OF PROGRAMMING AND READING A MEMORY - A page buffer and method of programming and reading a memory are provided. The page buffer includes a first latch, a second latch, a data change unit and a program control unit. The first latch includes a first terminal for loading data of the lower page and the upper page. The second latch includes a first terminal for storing the data of the lower page and the upper page from the first latch. The data change unit is coupled to a second terminal of the first latch for changing a voltage of the second terminal of the first latch to a low level. The program control unit is coupled to the first terminal of the second latch and the cells, and controlled by the voltage of the first terminal of the first latch for respectively programming the data of the lower page and the upper page to a target cell. | 02-04-2010 |
20100080059 | PAGE BUFFER USED IN A NAND FLASH MEMORY AND PROGRAMMING METHOD THEREOF - A page buffer used in a NAND flash memory comprises a first latch circuit, a second latch circuit, a bit line voltage supply circuit and a verification circuit comprising a first verification path, a second verification path and a third verification path. The first latch circuit and the second latch circuit latch the data programmed into and read from the NAND flash memory. The bit line voltage supply circuit supplies bit line voltages to the corresponding bit line of the NAND flash memory. The verification circuit verifies the programming operations of the NAND flash memory. The first verification path is for the verification of a first LSB programming operation. The second verification path is for the verification of a second LSB programming operation before the first LSB programming operation is verified. The third verification path is for the verification of the second LSB programming operation after the first LSB programming operation is verified. | 04-01-2010 |
20100080060 | DETERMINING MEMORY PAGE STATUS - The present disclosure includes methods, devices, modules, and systems for operating semiconductor memory. One method embodiment includes determining a status of a page of memory cells without using input/output (I/O) circuitry, and outputting the status through the I/O circuitry. | 04-01-2010 |
20100142277 | PAGE BUFFER CIRCUIT, NONVOLATILE MEMORY DEVICE INCLUDING THE PAGE BUFFER CIRCUIT, AND METHOD OF OPERATING THE NONVOLATILE MEMORY DEVICE - A page buffer circuit comprises a bit line selection unit, a latch unit, and a bit line control unit. The bit line selection unit is configured to select a bit line coupled to memory cells. The latch unit comprises a plurality of latch circuits. The plurality of latch circuits is coupled to a sense node and configured to latch data to be programmed into the memory cells or store data from the memory cells. The bit line control unit is coupled to the sense node and configured to temporarily charge a voltage of the selected bit line in response to charge and transfer control signals or transfer the charged voltage to the selected bit line. | 06-10-2010 |
20100142278 | PAGE BUFFER CIRCUIT, NONVOLATILE DEVICE INCLUDING THE SAME, AND METHOD OF OPERATING THE NONVOLATILE MEMORY DEVICE - A page buffer circuit comprises a sense unit, a latch unit, and a bit line voltage control unit. The sense unit is configured to couple a bit line and a sense node in response to a sense control signal in response to the sense control signal. The latch unit includes a plurality of latch circuits configured to latch data programmed or to be programmed. The bit line voltage control unit is configured to classify program states of memory cells, coupled to the selected bit line, into first to n | 06-10-2010 |
20100172180 | Non-Volatile Memory and Method With Write Cache Partitioning - A portion of a nonvolatile memory is partitioned from a main multi-level memory array to operate as a cache. The cache memory is configured to store at less capacity per memory cell and finer granularity of write units compared to the main memory. In a block-oriented memory architecture, the cache has multiple functions, not merely to improve access speed, but is an integral part of a sequential update block system. Decisions to write data to the cache memory or directly to the main memory depend on the attributes and characteristics of the data to be written, the state of the blocks in the main memory portion and the state of the blocks in the cache portion. | 07-08-2010 |
20100172181 | PAGE BUFFER CIRCUIT FOR ELECTRICALLY REWRITABLE NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD - Within a page buffer | 07-08-2010 |
20100202204 | PAGE-BUFFER AND NON-VOLATILE SEMICONDUCTOR MEMORY INCLUDING PAGE BUFFER - In one aspect, a non-volatile memory device is provided which is operable in a programming mode and a read mode. The memory device includes a memory cell array which includes a plurality of non-volatile memory cells, a plurality of word lines, and a plurality of bit lines. The memory device further includes an internal data output line for outputting data read from the bit lines of the memory array, and a page buffer operatively connected between a bit line of the memory cell array and the internal data output line. The page buffer includes a sense node which is selectively connected to the bit line, a latch circuit having a latch node which is selectively connected to the sense node, a latch input path which sets a logic voltage of the latch node in the programming mode and the read mode, and a latch output path which is separate from the latch input path and which sets as logic voltage of the internal date output line according to the logic voltage of the latch node. | 08-12-2010 |
20100259983 | NONVOLATILE MEMORY DEVICE AND DATA RANDOMIZING METHOD THEREOF - A method is for operating a nonvolatile memory device, where the memory device includes a memory cell array and a page buffer block. The method includes loading program data into the page buffer block, loading random sequence data into the page buffer block, generating randomized data by executing a logic operation, such as a bit-wise XOR operation, in the page buffer circuit on the program data and the first random sequence data, and programming the randomized data into the memory cell array. | 10-14-2010 |
20100302851 | NONVOLATILE MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - A nonvolatile memory device and a method of programming the device includes a memory cell array configured to have a number of memory cells, a row decoder coupled to the memory cells through word lines, page buffers coupled to the memory cells through bit lines, and a control unit configured to output correction voltages for reducing a difference in voltage between a selected one of the word lines and a channel region of a selected one of the memory cells in response to a program operation being performed. | 12-02-2010 |
20100302852 | NONVOLATILE MEMORY DEVICE AND METHOD OF VERIFYING THE SAME - A nonvolatile memory device having a memory cell array configured to include a number of memory cells coupled to a bit line, a control circuit configured to output a code signal in response to a verification operation command signal during a verification operation being performed, a page buffer operation voltage generator configured to generate a precharge signal and a sense signal in response to the code signal, and a page buffer configured to precharge the bit line in response to the precharge signal and to sense data programmed into the memory cell in response to the sense signal. A sense signal having a sequentially lowered voltage level is outputted in response to the verification operation being repeatedly performed. | 12-02-2010 |
20100309725 | PAGE BUFFER CIRCUIT, NONVOLATILE MEMORY DEVICE INCLUDING THE PAGE BUFFER CIRCUIT, AND METHOD OF OPERATING THE NONVOLATILE MEMORY DEVICE - A page buffer circuit including a bit line selection unit configured to select the first or second bit line in response to a first control signal and couple the selected bit line to a sense node, or to selectively precharge or discharge the first and second bit lines to a first voltage level, a first latch unit configured to store program data and output the stored program data to the sense node, a second latch unit configured to store data of a low logic level in response to a reset signal and discharge a selected bit line from a precharge state to a second voltage level, and a voltage control element configured to raise a voltage level of the sense node or drop a voltage level of the sense node to a third voltage level in response to a second control signal. | 12-09-2010 |
20110013455 | NON-VOLATILE MEMORY SERIAL CORE ARCHITECTURE - A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density. | 01-20-2011 |
20110069551 | Non-Volatile Semiconductor Memory with Page Erase - In a nonvolatile memory, less than a full block maybe erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages. | 03-24-2011 |
20110096603 | REVERSE ORDER PAGE WRITING IN FLASH MEMORIES - To store, in a memory block whose word lines are written successively in a word line writing order, a plurality of data pages that are ordered by logical page address, the pages are written to the word lines so that every page that is written to any one of the word lines has a higher logical page address than any page that is written to a subsequently written word line, regardless of the sequence in which the pages are received for writing. Alternatively, the pages are written to the word lines so that for every pair of written word lines, the word line of the pair that is earlier in the writing order has written thereto a page having a higher logical page address than at least one page written to the other word line of the pair. | 04-28-2011 |
20110122697 | METHOD OF PROGRAMMING A NONVOLATILE MEMORY DEVICE - A method of programming a nonvolatile memory device is disclosed. The method includes providing a plurality of memory cells coupled to a wordline, the plurality of memory cells grouped into a plurality of groups, each group including at least two memory cells, such that for each cell of the plurality of memory cells that has memory cells adjacent both sides, the memory cells immediately adjacent either side of the cell belong to different groups from each other. The method further includes selecting one group from the plurality of groups, and performing a program operation including applying a program pulse to the selected group while one or more non-selected groups of the plurality of groups are inhibited from being programmed. | 05-26-2011 |
20110134697 | DYNAMIC PASS VOLTAGE FOR SENSE OPERATION IN A MEMORY DEVICE - Methods for sensing and memory devices are disclosed. One such method for sensing uses a dynamic pass voltage on at least one adjacent memory cell that is adjacent to a selected memory cell for programming. If the adjacent memory cell is not programmed, the pass voltage is reduced on the adjacent memory cell. The adjacent memory cell can be on the drain side, the source side, or both drain and source sides of the selected memory cell. | 06-09-2011 |
20110176364 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a semiconductor substrate which includes a well. A memory cell array includes memory cells each including a floating gate electrode above the well and a control gate electrode above the floating gate electrode, and is configured to write data in units of pages each including memory cells connected in series and to erase data in units of blocks each includes a plurality of the pages. A control gate line is selectively electrically connected to the control gate electrodes of at least one of the blocks. A first switching element includes a current path having ends connected to the control gate line and a ground end. The well is charged, and the first switching element is turned off before the end of the discharge of the well. | 07-21-2011 |
20110228608 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device comprises a first memory cell, a second memory cell, and a control circuit. The first memory cell is connected to a first word line. The second memory cell is connected to a second word line which is adjacent to the first word line and has a width different from a width of the first word line. The control circuit applies a first voltage to the first word line and a second voltage different from the first voltage to the second word line. At least one of the first voltage and the second voltage is corrected by the control circuit based on write loop counts of the first memory cell and the second memory cell when the first memory cell and the second memory cell are write target cells in a write operation. | 09-22-2011 |
20110235418 | DETERMINING MEMORY PAGE STATUS - The present disclosure includes methods, devices, modules, and systems for operating semiconductor memory. One method embodiment includes determining a status of a page of memory cells without using input/output (I/O) circuitry, and outputting the status through the I/O circuitry. | 09-29-2011 |
20110305087 | FLASH MEMORY DEVICE AND READING METHOD THEREOF - A flash memory device wherein off cell margin is increased by controlling a voltage of a sensing node and a corresponding reading method, wherein the flash memory device includes a memory cell array; a sensing node voltage controller generating a precharge voltage and a sensing node voltage control signal; and a page buffer unit connected to the memory cell array through bit lines and having page buffers. The page buffers include a bit line connection unit connected between a corresponding bit line and a sensing node, that controls a voltage of the sensing node according to the sensing node voltage control signal; a precharge unit which precharges the sensing node according to the precharge voltage responsive to a precharge control signal; and a data input/output unit sensing a voltage level of the sensing node responsive to a latch control signal and outputting the data of the selected memory cell. | 12-15-2011 |
20120026795 | Electronic Apparatus and Data Reading Method - In one embodiment, there is provided an electronic apparatus. The apparatus includes: a storage device including a plurality of blocks that are units of data erasure. Each of the blocks includes a plurality of pages that are units of data reading or writing. Each of the pages includes: a data area storing a data; and a redundant area storing order information indicating an order of the data stored in the data area. The apparatus further includes: a reading module configured to read the data stored in the data area of each of the pages, in order from a last page to a head page, wherein, in reading each of the pages, the reading module is configured to read the order information stored in the redundant area prior to reading the data stored in the data area; a determining module configured to determine whether currently-read order information coincides with already-read order information; and a reading controller configured to control the reading module such that a data is not read from a data area of a page storing the currently-read order information, when the determining module determines that the currently-read order information coincides with the already-read order information. | 02-02-2012 |
20120069666 | MEMORY SYSTEM - A memory system includes a controller and a memory part including a memory cell array including memory cells, word lines, bit lines including bit line pairs each composed of an even bit line and an odd bit line adjacent to each other, and sense amplifiers provided to the bit line pairs and configured to detect data in selected memory cells connected to a selected word line. When reading data is performed from first memory cells to which writing data is performed first in memory cell pairs each including two adjacent memory cells respectively connected to one of the even bit lines and one of the odd bit lines, the controller controls the memory part so as to change a read level voltage applied to the selected word line depending on a data write state of second memory cells in the memory cell pairs to which writing data is performed later. | 03-22-2012 |
20120081961 | NONVOLATILE MEMORY APPARATUS CAPABLE OF REDUCING CURRENT CONSUMPTION AND RELATED DRIVING METHOD - Various exemplary embodiments of a nonvolatile memory apparatus are disclosed. In one exemplary embodiment, the memory apparatus may include: a page buffer; an even bit line connected to the page buffer; an odd bit line connected to the page buffer; an even memory cell string installed on the even bit line; an dd memory cell string installed on the odd bit line; and a bit line select unit configured to selectively generate a signal read path between the even bit line and the even memory cell string or between the odd bit line and the odd memory cell string. | 04-05-2012 |
20120113721 | FLEXIBLE MEMORY OPERATIONS IN NAND FLASH DEVICES - A flash memory device having at least two bank, where the each bank has an independently configurable page size and core controller. The core controller is local to each bank, and governs memory access operations for the bank that include read, program and erase operations. Each core controller controls timing and activation of row circuits, column circuits, voltage generators, and local input/output path circuits for a corresponding memory access operation of the bank. Concurrent operations are executable in multiple banks to improve performance. Each bank has a page size that is configurable with page size configuration data such that only selected wordlines are activated in response to address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. | 05-10-2012 |
20120127794 | PROGRAM VERIFY OPERATION IN A MEMORY DEVICE - Methods for program verifying, program verify circuits, and memory devices are disclosed. One such method for program verifying includes generating a ramped voltage for a plurality of count values. The ramped voltage is applied to a control gate of a memory cell being program verified. At least a portion of each count value is compared to an indication of a target threshold voltage for the memory cell. When the at least a portion of the count value is equal to the indication of the target threshold voltage indication, sense circuitry is used to check if the memory cell has been activated by the voltage generated by the count. If the memory cell has been activated, an inhibit latch is set to inhibit further programming of the memory cell. If the memory cell has not been activated by the voltage, the memory cell is biased with another programming pulse. | 05-24-2012 |
20120195123 | Method and apparatus for management of over-erasure in NAND-based NOR-type flash memory - A method and apparatus for operating an array block of dual charge retaining transistor NOR flash memory cells by erasing the dual charge retaining transistor NOR flash memory cells to set their threshold voltage levels to prevent leakage current from corrupting data during a read operation. Erasure of the array block of NOR flash memory cells begins by selecting one of block section of the array block and strongly and deeply erasing, over-erase verifying, and programming iteratively until the charge retaining transistors have their threshold voltages between the lower voltage limit and the upper voltage limit of the first program state. Other block sections are iteratively selected and erased, over-erase verified, and programmed repeatedly until the charge retaining transistors have their threshold voltages between the lower voltage limit and the upper voltage limit of the first program state until the entire block has been erased and reprogrammed to a positive threshold level. | 08-02-2012 |
20120250413 | Non-Volatile Semiconductor Memory with Page Erase - In a nonvolatile memory, less than a full block maybe erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages. | 10-04-2012 |
20120268996 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell array including memory block groups each coupled to bit lines, a page buffer group coupled to first bit lines of a first memory block group and configured to control voltages of the first bit lines of the first memory block group depending on data to be stored in memory cells in a program operation and configured to sense the voltage of the first bit lines in a read operation, at least one bit line coupling circuit configured to couple first bit lines of a n | 10-25-2012 |
20120281474 | DATA LINE MANAGEMENT IN A MEMORY DEVICE - Methods for programming a memory device, memory devices configured to perform the disclosed programming methods, and memory systems having a memory device configured to perform the disclosed programming methods are provided. According to at least one such method, multiple pages of memory cells are inhibited during a programming operation such that memory cells enabled for programming are separated by two or more inhibited memory cells of the same row of memory cells regardless of the intended pattern of data states to be programmed into that row of memory cells. | 11-08-2012 |
20120300548 | MEMORY SYSTEM AND DATA READING METHOD THEREOF - A memory system includes a memory and a memory controller operating to control the memory. The memory includes a random accessible memory including a memory cell array operable in a random access mode, a NAND flash memory, and a selection circuit making the memory controller operate either one of the random accessible memory or the NAND flash memory. | 11-29-2012 |
20120300549 | MEMORY DEVICE PAGE BUFFER CONFIGURATION AND METHODS - Memory devices and methods are described that include communication circuitry between page buffers in a memory array. Examples include communication circuitry that provide status information of page buffers that are directly adjacent to a given page buffer. The exchanged information can be used to adjust a given page buffer to compensate for effects in directly adjacent data lines that are being operated at the same time. | 11-29-2012 |
20120307560 | PAGE-BUFFER AND NON-VOLATILE SEMICONDUCTOR MEMORY INCLUDING PAGE BUFFER - A non-volatile memory device includes a memory cell array which includes a plurality of non-volatile memory cells, a plurality of word lines, and a plurality of bit lines. The memory device further includes an internal data output line for outputting data read from the bit lines of the memory array, and a page buffer operatively connected between a bit line of the memory cell array and the internal data output line. The page buffer includes a sense node which is selectively connected to the bit line, a latch circuit having a latch node which is selectively connected to the sense node, a latch input path which sets a logic voltage of the latch node in the programming mode and the read mode, and a latch output path which is separate from the latch input path. | 12-06-2012 |
20120314500 | NONVOLATILE MEMORY DEVICES AND METHODS OF PROGRAMMING NONVOLATILE MEMORY DEVICES - A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation. | 12-13-2012 |
20120314501 | SEMICONDUCTOR DEVICE AND METHOD OF PROGRAMMING THE SAME - A method of programming a semiconductor device includes performing a Least Significant Bit (LSB) program operation on selected memory cells, performing a soft program operation on the remaining memory cells other than memory cells on which the LSB program operation has been performed, and performing a Most Significant Bit (MSB) program operation on memory cells, selected from among the memory cells on which the LSB program operation has been performed and the memory cells on which the soft program operation has been performed. | 12-13-2012 |
20120320679 | SYSTEM AND METHOD FOR MINIMIZING WRITE AMPLIFICATION WHILE MAINTAINING SEQUENTIAL PERFORMANCE USING LOGICAL GROUP STRIPPING IN A MULTI-BANK SYSTEM - A system and method for reducing write amplification while maintaining a desired level of sequential read and write performance is disclosed. A controller in a multi-bank flash storage device may receive host data for writing to the plurality of flash memory banks. The controller may organize the received data in multi-page logical groups greater than a physical page and less than a physical block and interleave writes of the host data to the memory banks with that striping factor. A buffer RAM is associated with each bank of the multi-bank memory where the buffer RAM is sized as equal to or greater than the size of the multi-page logical group. | 12-20-2012 |
20130016562 | METHOD AND SYSTEM FOR ADJUSTING READ VOLTAGE IN FLASH MEMORY DEVICEAANM MUN; Kui-YonAACI Hwaseong-SiAACO KRAAGP MUN; Kui-Yon Hwaseong-Si KR - A method is provided for adjusting a read voltage in a flash memory device. The method includes storing first program count information when first pages of flash memory cells are programmed, the first program count information indicating a number of bits having a first logic value from among bits of data programmed in the first pages of the flash memory cells, and obtaining first read count information by counting a number of bits having the first logic value from among bits of data read from the first pages of the flash memory cells, while reading data from the flash memory cells using read voltages. The read voltages are adjusted based on the difference between the first read count information and the first program count information. | 01-17-2013 |
20130044543 | NON-VOLATILE MEMORY BANK AND PAGE BUFFER THEREFOR - A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. Each half of the memory bank is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density. | 02-21-2013 |
20130077402 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF WRITING DATA THEREIN - A non-volatile semiconductor memory device includes a plurality of cell units and a data writing unit. The cell unit includes first and second select gate transistors and a memory string including a plurality of memory cells. The data writing unit sequentially writes lower page data and upper page data corresponding to the lower page data to a selected memory cell selected in order from one close to the first select gate transistor to the second select gate transistor, and performs a first writing operation of writing the lower page data to the selected memory cell and a second writing operation of writing the upper page data to the selected memory cell after the first writing operation for n (n is an integer equal to or greater than 2) non-selected memory cells which are adjacent to a side of the selected memory cell close to the second select gate transistor. | 03-28-2013 |
20130077403 | MEMORY AND PROGRAM METHOD THEREOF - A method of programming a nonvolatile memory includes: applying a common program pulse to program cells within each page of a memory region including two or more pages; applying one or more different program pulses to the program cells within each page of the memory region, according to target threshold voltages of the program cells; and programming each page of the memory region such that the program cells have their own target threshold voltages. | 03-28-2013 |
20130083600 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME - A method of operating a semiconductor device includes selecting one of a plurality of memory cell blocks included in a memory cell array, programming even-numbered memory cells coupled to a selected word line among the word lines of the selected memory cell block, programming odd-numbered memory cells coupled to the selected word line, programming odd-numbered memory cells coupled to a next word line adjacent to the selected word line, and programming even-numbered memory cells coupled to the next word line, wherein the programming is repeated until programming on selected memory cells coupled to all the word lines of the selected memory cell block is completed. | 04-04-2013 |
20130088919 | NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A non-volatile memory device includes a memory cell block including a plurality of memory cells, a plurality of page buffer groups including a plurality of page buffers coupled to bit lines of the memory cell block, a pass/fail check circuit coupled to the plurality of page buffers and configured to perform a pass/fail check operation of comparing a total amount of current varying according to verify data sensed from the memory cells and stored in the page buffers with an amount of reference current corresponding to the number of allowed bits, and a control circuit configured to control the pass/fail check circuit by stopping, when a fail signal is generated during the pass/fail check operation currently being performed on a page buffer group among the plurality of page buffer groups, the pass/fail check operation on the remaining page buffer groups. | 04-11-2013 |
20130135932 | NON-VOLATILE MEMORY, METHOD OF OPERATING THE SAME, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SYSTEM - A nonvolatile memory device includes an array of nonvolatile memory cells and a plurality of page buffers configured to receive a plurality of pages of data read from the same page in the array using different read voltage conditions. A control circuit is provided, which is electrically coupled to the plurality of page buffers. The control circuit is configured to perform a test operation by driving the plurality of page buffers with control signals that cause generation within the nonvolatile memory device of a string of XOR data bits, which are derived from a comparison of at least two of the multiple pages of data read from the same page of nonvolatile memory cells using the different read voltage conditions. An input/output device is provided, which is configured to output test data derived from the string of XOR data bits to another device located external to the nonvolatile memory device. | 05-30-2013 |
20130155773 | NON-VOLATILE MEMORY DEVICE - A non-volatile memory device includes a memory cell array in which a plurality of bit lines intersect a plurality of word lines and a non-volatile memory cell is disposed at each intersection, a page buffer which is provided for each bit line and which includes a latch configured to store data to be written to a memory cell connected to a word line selected from among the plurality of word lines or data read from the memory cell, and a control circuit configured to control a data input time from the bit line to the page buffer and a data detection time of the latch according to a voltage level of a common source line connected to sources of the respective bit lines during an operation of reading data from the memory cell. | 06-20-2013 |
20130163332 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes memory blocks including pages connected to plural main cells, a spare block, including pages connected to spare cells, configured to store a random seed for randomization to the spare cells connected to each page, page buffers configured to scramble data inputted for program operation by using random seed read from a page of the spare block selected by a control signal to transmit the scrambled data to the bit line, and configured to descramble data read from a main cell selected for read operation and output the descrambled data, and a controller configured to output the control signal to select a page of the spare block corresponding to an address of a page of the memory block selected for the programming or reading, and configured to control a scramble operation and a descramble operation of the page buffers. | 06-27-2013 |
20130163333 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - The semiconductor memory device includes a memory cell array configured to include a plurality of blocks, wherein each of the blocks has pages and each of the pages includes memory cells, and a peripheral circuit configured to program the memory cells to target program states. Here, the peripheral circuit programs the memory cells to temporary program states by applying program voltages increasing step-by-step by a first incremental value, and then programs the memory cells to the target program states by applying program voltages increasing step-by-step by a second incremental value. | 06-27-2013 |
20130163334 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device and a method of operating the same include a circuit group configured to apply a program maintaining voltage between the program prohibition voltage and the program permission voltage to bit lines connected to programmed memory cells to prevent a decrease in threshold voltage. | 06-27-2013 |
20130163335 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device is operated by, inter alia, sequentially inputting program data to page buffers coupled to selected pages of at least four planes in order to program selected memory cells included in the selected pages; performing a program operation on each of the four planes; performing a program verify operation on each of the four planes; and inputting new program data for next pages to the page buffers coupled to the next pages, after determining the selected pages of at least two of the four planes have passed the program verify operation, while performing the program operations and the program verify operations on the two remaining planes. | 06-27-2013 |
20130176785 | METHOD FOR ACCESSING A FLASH MEMORY, AND ASSOCIATED FLASH MEMORY SYSTEM - A method for accessing a Flash memory and an associated Flash memory system are provided, where the Flash memory includes a plurality of blocks, each of the blocks includes a plurality of pages, and each of the pages includes a plurality of sectors. The method includes: receiving a page of data from a host; encoding a first portion of the page of data by a randomizer that operated under a first seed to generate a first encoded data; encoding a second portion of the page of data by the randomizer that operated under a second seed to generate a second encoded data, wherein the first seed is different from the second seed; and storing the first encoded data and the second encoded data to the Flash memory. An associated method and an associated Flash memory system are also provided. | 07-11-2013 |
20130250686 | SEMICONDUCTOR MEMORY DEVICE, INFORMATION PROCESSING SYSTEM AND CONTROL METHOD - According to an embodiment, a semiconductor memory device includes a first storage unit, a receiving unit, an acquiring unit, and an output control unit. The first storage unit is configured to store a value and address information in which a key address generated on the basis of a key associated with the value and a physical address of the value are associated with each other. The receiving unit is configured to receive a request for acquisition of the value associated with the key. The request contains the key. The acquiring unit is configured to acquire the physical address associated with the key address of the key contained in the request for acquisition on the basis of the address information. The output control unit is configured to acquire the value at the acquired physical address from the first storage unit and output the acquired value in response to the request. | 09-26-2013 |
20130272068 | MANAGING OF THE ERASING OF OPERATIVE PAGES OF A FLASH MEMORY DEVICE THROUGH SERVICE PAGES - A method for managing a flash memory device including pages of memory cells is described. The memory device may be erasable at the page level, and the pages may include operative pages for storing operative values and service pages for storing information relating to the erasing of the operative pages. In response to a request to erase selected operative pages, the method may include determining a service page in use among the service pages according to service information stored in the service pages, verifying the presence a service page to be erased, and applying an erasing pulse to each service page to be erased. The method may also include writing an address of the operative pages into the service page in use, erasing the selected operative pages, and writing a completion indication of the erasing of the selected operative pages into the service page in use. | 10-17-2013 |
20130336063 | Non-Volatile Semiconductor Memory with Page Erase - In a nonvolatile memory, less than a full block maybe erased as one or more pages. A select voltage is applied through pass transistors to each of plural selected wordlines and an unselect voltage is applied through pass transistor to each of plural unselected wordlines of a selected block. A substrate voltage is applied to the substrate of the selected block. A common select voltage may be applied to each selected wordline and the common unselect voltage may be applied to each unselected wordline. Select and unselect voltages may be applied to any of the wordlines of a select block. A page erase verify operation may be applied to a block having plural erased pages and plural nonerased pages. | 12-19-2013 |
20140022846 | NAND FLASH MEMORY HAVING MULTIPLE CELL SUBSTRATES - A NAND flash memory bank having a plurality of bitlines of a memory array connected to a page buffer, where NAND cell strings connected to the same bitline are formed in at least two well sectors. At least one well sector can be selectively coupled to an erase voltage during an erase operation, such that unselected well sectors are inhibited from receiving the erase voltage. When the area of the well sectors decrease, a corresponding decrease in the capacitance of each well sector results. Accordingly, higher speed erasing of the NAND flash memory cells relative to a single well memory bank is obtained when the charge pump circuit drive capacity remains unchanged. Alternately, a constant erase speed corresponding to a single well memory bank is obtained by matching a well segment having a specific area to a charge pump with reduced drive capacity. A reduced drive capacity charge pump will occupy less semiconductor chip area, thereby reducing cost. | 01-23-2014 |
20140029341 | NON-VOLATILE SOLID STATE MEMORY-BASED MASS STORAGE DEVICE AND METHODS THEREOF - Non-volatile solid state mass storage device and methods for improving write performance thereof. The storage device includes a NAND flash controller, an array of NAND flash memory integrated circuits, and means for determining a lowest unused page number of each write target block in a group of the NAND flash memory integrated circuits that are simultaneously accessible at any given time by a write command. The storage device has further means for programming a dummy write to at least a first write target block in a first NAND flash memory integrated circuit within the group of NAND flash memory integrated circuits if the lowest unused page number within the first write target block is lower than the lowest unused page number of a second write target block in a second NAND flash memory integrated circuit in the group of NAND flash memory integrated circuits. | 01-30-2014 |
20140029342 | EXPERIENCE COUNT DEPENDENT PROGRAM ALGORITHM FOR FLASH MEMORY - In a non-volatile memory device, the parameters used in write and erase operation are varied based upon device age. For example, in a programming operation using a staircase waveform, the amplitude of the initial pulse can be adjusted based upon the number of erase-program cycles (hot count) of the block containing the selected physical page for the write. This arrangement can preserve performance for relatively fresh devices, while extending life as a devices ages by using gentler waveforms as the device ages. | 01-30-2014 |
20140043908 | SEMICONDUCTOR MEMORY DEVICE AND METHODS OF OPERATING THE SAME - A semiconductor memory device comprises a memory cell array including a plurality of memory blocks each including a plurality of pages, wherein each of the plurality of pages includes at least one flag cell indicating whether data is in a corresponding page, and a peripheral circuit configured to read data of flag cells of a selected memory block in response to an erase request and to omit an erase operation on the selected memory block based on the data of the flag cells. | 02-13-2014 |
20140056073 | NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY SYSTEM INCLUDING THE SAME - A nonvolatile memory device includes a cell array including a plurality of pages, a selection unit configured to select one of the pages in response to a page selection address, an operation control unit configured to read data of a given number of pages adjacent to the selected page and output the read data as backup data, to erase data of the selected page, in response to a page erase command, and to reprogram update data and the backup data in the selected page and the adjacent pages, respectively, and a data storage unit configured to store the backup data. | 02-27-2014 |
20140056074 | NONVOLATILE MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A nonvolatile memory includes a memory cell array including a plurality of nonvolatile memory cells connected to bit lines and word lines crossing the bit lines, a voltage driver configured to provide a word line voltage to the word lines and provide a first voltage during a precharging operation and a second voltage during a sensing operation, based on a voltage setting signal, and a page buffer unit configured to adjust a precharging level of a sensing node connected to a bit line of a page included in a selected memory block of the memory cell array using the first voltage and adjust a sensing level of the sensing node using the second voltage. | 02-27-2014 |
20140063955 | STORAGE DEVICE AND CONTROL METHOD OF NONVOLATILE MEMORY - According to one embodiment, a storage device includes a nonvolatile memory, a controller configured to copy data stored in a first page in a first block to a second page in a second block, and an ECC circuit. The controller reads data from a part of the first page by using an upper limit voltage and lower limit voltage, performs a direct copy operation in the nonvolatile memory without via the ECC circuit if the number of error cells having threshold voltages higher than the lower limit voltage and lower than or equal to the upper limit voltage is less than or equal to a specified value, and performs error correction by using the ECC circuit if the number of error cells exceeds the specified value. | 03-06-2014 |
20140063956 | NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF - A nonvolatile memory device includes: a page buffer block including a plurality of cache latches configured to temporarily store data inputted to program memory cells, and configured to program the inputted data into the memory cells; and a column decoder configured to provide column select signals for selecting the cache latches to the cache latches according to a column address, wherein the column decoder activates column select signals for selecting a part of the cache latches at substantially the same time, while data are set up in the cache latches. | 03-06-2014 |
20140063957 | NOR FLASH MEMORY ARRAY STRUCTURE, MIXED NONVOLATILE FLASH MEMORY AND MEMORY SYSTEM COMPRISING THE SAME - A NOR flash memory array structure is provided, comprising: a substrate ( | 03-06-2014 |
20140085981 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory block as a code storage memory area which has a large memory capacity and in which the number of bits to be written at once is large, and a memory block as a work memory area which has a small memory capacity and in which the number of bits to be written at once is small, in which in writing to the code storage memory area a first voltage is supplied to a source line of this memory block, and in writing to the work memory area a second voltage higher than the first voltage is supplied to a source line of this memory block. | 03-27-2014 |
20140098610 | Erased State Reading - Memory cells that are indicated as being erased but are suspected of being partially programmed may be subject to a verification scheme that first performs a conventional read and then, if the conventional read does not indicate partial programming, performs a second read using lower read-pass voltage on at least one neighboring word line. | 04-10-2014 |
20140104950 | NON-VOLATILE SEMICONDUCTOR MEMORY - A non-volatile semiconductor memory includes a memory array. In a programming operation, programming pulses are applied to a page of the memory array to program data to the page. In an erase operation, erase pulses are applied to a block of the memory array to erase data in the block. The non-volatile semiconductor memory performs a pre-program operation before the erase operation and a post-erase operation after the erase operation. In the pre-program operation, each page of the block is programmed according to voltage information relating programming pulses. In the erase operation, data in the block is erased according to the voltage information relating programming pulses. | 04-17-2014 |
20140133235 | NON-VOLATILE MEMORY DEVICE HAVING CONFIGURABLE PAGE SIZE - A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted. | 05-15-2014 |
20140133236 | HIERARCHICAL COMMON SOURCE LINE STRUCTURE IN NAND FLASH MEMORY - Each memory cell string in a generic NAND flash cell block connects to a Common Source Line (CLS). A value for applying to the CSL is centrally generated and distributed to a local switch logic unit corresponding to each NAND flash cell block. For source-line page programming, the distribution line may be called a Global Common Source Line (GCSL). In an array of NAND flash cell blocks, only one NAND flash cell block is selected at a time for programming. To reduce power consumption, only the selected NAND flash cell block receives a value on the CSL that is indicative of the value on the GCSL. Additionally, the CSLs of non-selected NAND flash cell blocks may be disabled through an active connection to ground. | 05-15-2014 |
20140140136 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME - A method of operating a semiconductor device includes storing LSB data in a LSB page included in plural pages of corresponding word line group of a first memory block, generating a data combination signal by combining plural sets of LSB data after the step of storing LSB data, storing the data combination signal in a second memory block, and storing MSB data in a MSB page included in the plural pages. | 05-22-2014 |
20140169094 | DATA TRANSMISSION CIRCUIT, MEMORY INCLUDING THE SAME, AND DATA TRANSMISSION METHOD - A data transmission circuit includes an input line selection unit configured to transfer data of a selected input line among a plurality of input lines to an output line, a data sensing unit connected to the plurality of input lines and configured to sense the data of the selected input line, and a data amplification unit configured to amplify data of the output line in response to a data sensing result of the data sensing unit. | 06-19-2014 |
20140198573 | MEMORY SYSTEM AND METHOD OF OPERATION THEREOF - A method of operating a memory system including a non-volatile memory device and a memory controller controlling the non-volatile memory device, includes reading data from a memory cell array in a unit of a page which includes a plurality of sectors; performing error correction decoding on the read data in a unit of a sector of the page; selecting at least one target sector which includes at least one uncorrectable error and selecting at least one pass sector wherein all errors of the pass sector are correctable by the error correction decoding; inhibiting precharging of bit-lines connected to the at least one pass sector while precharging target bit lines connected to the at least one target sector; and performing a read retry operation for data in the at least one target sector. | 07-17-2014 |
20140204672 | MEMORY SYSTEM - A memory system includes a flash memory including a block having first sub-blocks and second sub-blocks different from each other, the second sub-blocks including free pages only; and a controller configured to erase the flash memory in units of the sub-blocks, and in a garbage collection operation, the controller is configured to copy data of a valid page of the first sub-blocks to at least one of the second sub-blocks. | 07-24-2014 |
20140204673 | FLASH MEMORY MODULE FOR REALIZING HIGH RELIABILITY - A flash memory module may include a plurality of flash memory chips. The memory chips may include one or more blocks. Each block may be a unit of erasing data. A flash controller may be coupled to the plurality of flash memory chips. The flash controller may program data to block and erase data from a block. The flash controller may manage a recent programming time for each of the plurality of blocks. The flash controller may erase data stored in a block for which an elapsed programming time is larger than a first value. | 07-24-2014 |
20140247662 | Efficient Smart Verify Method For Programming 3D Non-Volatile Memory - In a programming operation of a 3D stacked non-volatile memory device, an initial set of memory cells on a selected word line layer, involving fewer than all memory cells on a selected word line layer, are programmed first as a test case to determine optimal conditions for programming the remaining memory cells on the selected word line layer. For example, a number of program-verify iterations or loops which are needed to program the initial set of memory cells an initial amount is determined. This loop count is then stored, e.g., within the initial set of memory cells, within the remaining memory cells, within memory cells on a remaining word line layer, or in a data register, and programming of the initial set of memory cells continues to completion. Subsequently, the loop count is retrieved and used to determine an optimal starting program voltage for programming the remaining memory cells. | 09-04-2014 |
20140254272 | SIMULTANEOUS SENSING OF MULTIPLE WORDLINES AND DETECTION OF NAND FAILURES - Techniques for a post-write read are presented. In an exemplary embodiment, a combined simultaneous sensing of multiple word lines is used in order to identify a problem in one or more of these word lines. That is, sensing voltages are concurrently applied to the control gates of more than one memory cell whose resultant conductance is measured on the same bit line. The combined sensing result is use for measuring certain statistics of the cell voltage distribution (CVD) of multiple word lines and comparing it to the expected value. In case the measured statistics are different than expected, this may indicate that one or more of the sensed word lines may exhibit a failure and more thorough examination of the group of word lines can be performed. | 09-11-2014 |
20140254273 | METHOD AND SYSTEM FOR MINIMIZING NUMBER OF PROGRAMMING PULSES USED TO PROGRAM ROWS OF NON-VOLATILE MEMORY CELLS - A flash memory device programs cells in each row in a manner that minimizes the number of programming pulses that must be applied to the cells during programming. The flash memory device includes a pseudo pass circuit that determines the number of data errors in each of a plurality of subsets of data that has been programmed in the row. The size of each subset corresponds to the number of read data bits coupled from the memory device, which are simultaneously applied to error checking and correcting circuitry. During iterative programming of a row of cells, the pseudo pass circuit indicates a pseudo pass condition to terminate further programming of the row if none of the subsets of data have a number of data errors that exceeds the number of data errors that can be corrected by the error checking and correcting circuitry. | 09-11-2014 |
20140269074 | MANAGEMENT OF NON-VOLATILE MEMORY - A method for programming a non-volatile memory including a plurality of blocks, each block including a plurality of sections, each section including at least one page, and each page including a plurality of memory cells. The method includes checking a current section of the plurality of sections against a damaged section table to determine whether the current section is damaged. The damaged section table records information about whether a section in the memory is good or damaged. The method further includes using the current section for programming if the current section is not damaged. | 09-18-2014 |
20140286099 | SEMICONDUCTOR MEMORY DEVICE, CONTROLLER, AND MEMORY SYSTEM - A semiconductor memory device includes a memory cell array that is capable of storing data in a nonvolatile manner, and a control section that controls data access to the memory cell array. The memory cell array stores the same data redundantly in a plurality of pages. The control section executes a reading operation on the plurality of pages that store the same data redundantly to read the data. The data that is stored redundantly may be management data or user data. | 09-25-2014 |
20140293696 | DATA READING METHOD, AND CONTROL CIRCUIT, MEMORY MODULE AND MEMORY STORAGE APPARATUS AND MEMORY MODULE USING THE SAME - A data reading method for a rewritable non-volatile memory module is provided. The method includes applying a test voltage to a word line of the rewritable non-volatile memory module to read a plurality of verification bit data. The method also includes calculating a variation of bit data identified as a first status among the verification bit data, obtaining a new read voltage value set based on the variation, and updating a threshold voltage set for the word line with the new read voltage value set. The method further includes using the updated threshold voltage set to read data from a physical page formed by memory cells connected to the word line. Accordingly, storage states of memory cells in the rewritable non-volatile memory module can be identified correctly, thereby preventing data stored in the memory cells from losing. | 10-02-2014 |
20140293697 | CHARGE LOSS COMPENSATION METHODS AND APPARATUS - Methods and apparatus for compensating for charge loss in memories include tracking a specific block of the main memory array and determining charge loss compensation by comparing pre-cycled and post-cycled mean threshold voltages for the tracking block; or tracking each block of the main memory and determining charge loss and compensation on a block by block basis. | 10-02-2014 |
20140293698 | LIMITING FLASH MEMORY OVER PROGRAMMING - Certain aspects of this disclosure relate to programming an at least one flash memory cell using an at least one programming pulse with a new programming voltage having a level. The level is maintained in at least one page in a block of a flash memory controller memory, wherein the level varies as a function of a number of programming cycles applied to the at least one flash memory cell. | 10-02-2014 |
20140313830 | PAGE BUFFER CIRCUIT - A page buffer circuit is coupled to a bit line of a memory array. The page buffer circuit includes a latch storing different data during different phases of a multi-phase program operation. A preparation phase is after the program phase and after the program verify phase of the present multi-phase program operation. For the preparation phase, the control circuitry causes the latch to store the preparation data indicating whether to program the memory cell in a subsequent multi-phase program operation following the present multi-phase program operation. Results of the program verify phase, and contents of the latch at a start of the present multi-phase program operation, are sufficient to determine the preparation data. | 10-23-2014 |
20140313831 | DEVICE SELECTION SCHEMES IN MULTI CHIP PACKAGE NAND FLASH MEMORY SYSTEM - Device selection schemes in multi-chip package NAND flash memory systems are provided. A memory system is provided that has a memory controller, and a number of memory devices connected to the controller via a common bus with a multi-drop connection. The memory controller performs device selection by command. A corresponding memory controller is provided which performs device selection by command. Alternatively, device selection is performed by address. A memory device is provided use in memory system comprising a memory controller, and a number of memory devices inclusive of the memory device connected to the controller via a common bus with a multi-drop connection. The memory device has a register containing a device identifier, and a device identifier comparator that compares selected bits of a received input address to contents of the register to determine if there is a match. The memory device is selected if the device identifier comparator determines there is a match. | 10-23-2014 |
20140321207 | DETERMINING SOFT DATA FOR COMBINATIONS OF MEMORY CELLS - The present disclosure includes apparatuses and methods for determining soft data for combinations of memory cells. A number of embodiments include an array of memory cells, wherein the array includes a first memory cell and a second memory cell, wherein the first and second memory cells are each programmable to one of a number of program states, and wherein a combination of the program states of the first and second memory cells corresponds to one of a number of data states. A number of embodiments also include a buffer and/or a controller coupled to the array and configured to determine soft data associated with the program states of the first and second memory cells and determine soft data associated with the data state that corresponds to the combination of the program states of the first and second memory cells based, at least in part, on the soft data associated with the program state of the first memory cell and the soft data associated with the program state of the second memory cell. | 10-30-2014 |
20140321208 | DE-DUPLICATION IN FLASH MEMORY MODULE - Data capacity efficiency is improved by de-duplicating data assigned with a code that is different for each data. A storage apparatus comprising a flash memory control device equipped with one or more flash memory modules, wherein the flash memory module comprises at least one flash memory chip for providing a storage area, and a controller for controlling writing/reading of data including user data and a guarantee code accompanying the user data to and from the storage area provided by the flash memory chip, wherein the controller respectively divides a plurality of the data having the common user data into the user data and the guarantee code, stores one of the user data in an area of a predetermined unit of the storage area, and links and stores each of the guarantee codes accompanying the plurality of user data in an area of a predetermined unit of the storage area. | 10-30-2014 |
20140321209 | NON-VOLATILE MEMORY DEVICE AND RELATED READ METHOD - A nonvolatile memory device comprises a memory cell array and a voltage generator. The memory cell array comprises a plurality of memory cells connected in series between a string selection transistor connected to a bit line and a ground selection transistor connected to a source line. The voltage generator provides read voltages to word lines of memory cells selected from among the plurality of memory cells during a read operation. The read voltages of the selected memory cells differ from each other according to their respective distances from the string selection transistor. | 10-30-2014 |
20140328126 | Flash Memory Having Dual Supply Operation - A flash memory device may operate from two supply voltages, one being provided externally, and the other being generated within the flash memory device from the external supply voltage. The flash memory device may be provided with a selectable-level buffer for interfacing with either low supply voltage or high supply voltage integrated circuits. To provide even greater flexibility, the flash memory device may be provided with the capability of receiving a second supply voltage from an external source, which may take precedence over the internally-generated second supply voltage or may be combined with the internally-generated second supply voltage. | 11-06-2014 |
20140328127 | Method of Managing Non-Volatile Memory and Non-Volatile Storage Device Using the Same - A method of managing a non-volatile memory where the non-volatile memory comprises a plurality of memory blocks and each of the plurality of memory blocks includes a plurality of memory pages includes partitioning a memory page among the plurality of memory pages into a plurality of clusters; and writing data and a mapping information corresponding to the data into different clusters of the plurality of clusters. | 11-06-2014 |
20140347931 | WRITING INTO AN EEPROM ON AN I2C BUS - An EEPROM circuit includes a data reception register and a column decoder. A buffer memory having a size corresponding to the size of a data page is included between the data reception register and the column decoder. | 11-27-2014 |
20140347932 | MEMORY WITH THREE TRANSISTOR MEMORY CELL DEVICE - Memory, memory devices, and a method for a backup sequence are disclosed. In one such memory device, sense circuitry and page buffers are coupled between a three transistor memory cell device and a non-volatile memory device. Enable/disable gates enable selective access to the sense circuitry and page buffers by either the three transistor memory cell device or the non-volatile memory device. | 11-27-2014 |
20140362640 | METHOD FOR BLOCK-ERASING A PAGE-ERASABLE EEPROM-TYPE MEMORY - A method for erasing a page-erasable EEPROM-type memory includes: the memory receiving a command associated with a set of addresses of pages of the memory to be erased, each page comprising several memory cell groups each forming a word, for each address of the set of addresses, selecting a word line corresponding to a page of the memory, and triggering the simultaneous erasing of all the selected word lines. | 12-11-2014 |
20140369125 | SEMICONDUCTOR DEVICE, DATA PROGRAMMING DEVICE, AND METHOD FOR IMPROVING THE RECOVERY OF BIT LINES OF UNSELECTED MEMORY CELLS FOR PROGRAMMING OPERATION - A device comprises a non-volatile memory array, a first selection circuit selecting whether to make a first connection path between a first bit line and a first circuit node, and selecting whether to make a second connection path between the first bit line and a second circuit node, a power supplying circuit supplying a power supply voltage to the first circuit node, the power supply voltage being, when the first connection path is selected to be made, supplied to the first bit line, and a first voltage supplying circuit supplying a first voltage to the second circuit node, the first voltage being, when the second connection path is selected to be made, supplied to the first bit line, the first voltage and the power supply voltage being higher than a ground potential, and the first voltage being higher than the power supply voltage. | 12-18-2014 |
20140376312 | NONVOLATILE MEMORY DEVICES AND METHODS OF PROGRAMMING NONVOLATILE MEMORY DEVICES - A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation. | 12-25-2014 |
20150009754 | PARTIAL BLOCK ERASE ARCHITECTURE FOR FLASH MEMORY - A method and system for increasing the lifespan of a flash memory device by selectively erasing sub-blocks of a memory block. Each physical memory block of the flash memory device is dividable into at least two logical sub-blocks, where each of the at least two logical sub-blocks is erasable. Therefore, only the data of the logical sub-block is erased and reprogrammed while unmodified data in the other logical sub-block avoids unnecessary program/erase cycles. The logical sub-blocks to be erased are dynamically configurable in size and location within the block. A wear leveling algorithm is used for distributing data throughout the physical and logical sub-blocks of the memory array to maximize the lifespan of the physical blocks during programming and data modification operations. | 01-08-2015 |
20150023103 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor device includes first memory blocks arranged in a longitudinal direction, and including a plurality of strings, wherein the strings are formed along a vertical direction, and the strings adjacent to each other share bit lines or source lines with each other, each string including a drain selection transistor coupled to an odd drain selection line or an even drain selection line, memory cells coupled to word lines, and a source selection transistor coupled to an odd source selection line or an even source selection line, page buffers suitable for storing data, a selection switch unit suitable for transferring the data stored in the page buffers or various voltages supplied from an external source to the bit lines and the source lines; and a control circuit suitable for controlling the page buffers and the selection switch unit. | 01-22-2015 |
20150036431 | OPERATING METHOD OF NONVOLATILE MEMORY DEVICE AND OPERATING METHOD OF MEMORY CONTROLLER CONTROLLING THE NONVOLATILE MEMORY DEVICE - An operating method of a memory controller controlling a nonvolatile memory device including a plurality of pages includes receiving a read request and a logical address from an additional device; determining a program state of an upper unselected word line of a selected word line corresponding to the received logical address; and transmitting a physical address corresponding to the logical address, state information, and a read command to the nonvolatile memory device according to a result of the determination in response to the read request, wherein the state information indicates a level of a first unselect read voltage the nonvolatile memory device is to apply to the upper unselected word line. | 02-05-2015 |
20150036432 | Method and Apparatus for Improving Data Integrity Using Threshold Voltage Recalibration - A non-volatile (“NV”) memory device is able to enhance data integrity using threshold voltage (“Vt”) recalibration based on a selected scheme. Upon receiving a command for reading a data page, the process, in one embodiment, identifies a reference page which is located at a predefined location in a block of the NV memory. After reading the first reference data from the reference page by a reader in response to a first or current Vt, a first bit error rate (“BER”) is generated based on the comparison between the first reference data and the predefined known data pattern. If the first BER is greater than a predefined BER target, a second Vt is subsequently calculated in accordance with the first Vt. When the second BER is equal to or less than the predefined BER target, an optimal Vt is set to the second Vt. There are also two other methods using DC balance coding scheme and counting the number of 1's in the selected data page can be used in recalibrating the threshold voltage. | 02-05-2015 |
20150036433 | SEMICONDUCTOR MEMORY DEVICE AND METHODS OF OPERATING THE SAME - A semiconductor memory device comprises a memory cell array including a plurality of memory blocks each including a plurality of pages, wherein each of the plurality of pages includes at least one flag cell indicating whether data is in a corresponding page, and a peripheral circuit configured to read data of flag cells of a selected memory block in response to an erase request and to omit an erase operation on the selected memory block based on the data of the flag cells. | 02-05-2015 |
20150049549 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, MEMORY CONTROLLER, AND MEMORY SYSTEM - A nonvolatile semiconductor memory device includes a memory cell array that share a plurality of bit lines, each block unit including a plurality of memory cells for storing user data and at least one memory cell for storing flag data indicating whether the block unit is defective, and a control unit configured to read the flag data from a block unit during a read operation or a write operation on the block unit, and when the flag data indicates the block unit is defective, discontinue the read operation and the write operation on the block unit. | 02-19-2015 |
20150049550 | NON-VOLATILE MEMORY SERIAL CORE ARCHITECTURE - A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density. | 02-19-2015 |
20150055414 | MEMORY DEVICE STRUCTURE WITH PAGE BUFFERS IN A PAGE-BUFFER LEVEL SEPARATE FROM THE ARRAY LEVEL - A structure of a memory device and a method for making the memory device structure are described. The memory device includes an array of memory cells in an array level die. The array comprises a plurality of sub-arrays. Each of the sub-arrays comprises respective data lines. The memory device also includes page buffers for corresponding sub-arrays in a page-buffer level die. The memory device also includes inter-die connections that are configured to electrically couple the page buffers in the page-buffer level die to data lines of corresponding sub-arrays in the array level die. | 02-26-2015 |
20150063029 | FLASH MEMORY DEVICE REDUCING NOISE PEAK AND PROGRAM TIME AND PROGRAMMING METHOD THEREOF - A flash memory device reduces noise peak and program time through serial programming of program blocks of memory cells. The time interval or the number of the program groups is decreased according to the proceeding program loop in the plurality of program loops, reducing the total program time. | 03-05-2015 |
20150063030 | METHOD OF TESTING NON-VOLATILE MEMORY DEVICE AND METHOD OF MANAGING NON-VOLATILE MEMORY DEVICE - A method of testing a non-volatile memory device and a method of managing the non-volatile memory device are provided. The method of testing the non-volatile memory device includes calculating first and second values based on program loop frequencies corresponding to word lines of a memory area. A characteristic value of the memory area may be calculated based on the first and second values, and may be compared to a reference value to determine whether the memory area is defective. | 03-05-2015 |
20150063031 | DYNAMIC PROGRAM WINDOW DETERMINATION IN A MEMORY DEVICE - A memory device has an array of memory cells and a controller coupled to the array of memory cells. The controller is configured to determine a program window after a portion of a particular programing operation performed on the memory device is performed and before a subsequent portion of the particular programing operation performed on the memory device is performed. The controller is configured to determine the program window responsive to an amount of program disturb experienced by a particular state of a memory cell. The controller is configured to perform the subsequent portion of the particular programing operation performed on the memory device using the determined program window. | 03-05-2015 |
20150070996 | DATA STORAGE SYSTEM AND METHOD OF OPERATING THE SAME - A data storage system and a method of operating the same are provided. The method includes performing a program operation on a first page of the pages of a memory block, deciding, when power is switched on after a sudden power-off is generated while the program operation is performed, whether to skip the program operation on a first erase page of the pages based on a second page on which the program operation is performed subsequent to the first page, and performing the program operation on the second page. | 03-12-2015 |
20150070997 | NON-VOLATILE MEMORY, METHOD OF OPERATING THE SAME, MEMORY SYSTEM INCLUDING THE SAME, AND METHOD OF OPERATING THE SYSTEM - A nonvolatile memory device includes an array of nonvolatile memory cells and a plurality of page buffers configured to receive a plurality of pages of data read from the same page in the array using different read voltage conditions. A control circuit is provided, which is electrically coupled to the plurality of page buffers. The control circuit is configured to perform a test operation by driving the plurality of page buffers with control signals that cause generation within the nonvolatile memory device of a string of XOR data bits, which are derived from a comparison of at least two of the multiple pages of data read from the same page of nonvolatile memory cells using the different read voltage conditions. An input/output device is provided, which is configured to output test data derived from the string of XOR data bits to another device located external to the nonvolatile memory device. | 03-12-2015 |
20150085577 | FLASH MEMORY MODULE FOR REALIZING HIGH RELIABILITY - A flash memory module may include a plurality of flash memory chips. The memory chips may include one or more blocks. Each block may be a unit of erasing data. A flash controller may be coupled to the plurality of flash memory chips. The flash controller may program data to block and erase data from a block. The flash controller may manage a recent programming time for each of the plurality of blocks. The flash controller may erase data stored in a block for which an elapsed programming time is larger than a first value. | 03-26-2015 |
20150085578 | METHOD AND SYSTEM FOR PROGRAMMING NON-VOLATILE MEMORY CELLS BASED ON PROGRAMMING OF PROXIMATE MEMORY CELLS - A multi-level non-volatile memory device programs cells in each row in a manner that takes into account the coupling from the programming of cells that are proximate the row to be programmed. In one example of the invention, after the row has been programmed, the proximate cells are verified by read, comparison, and, if necessary, reprogramming operations to compensate for charge added to proximate memory cells resulting from programming the row. In another example of the invention, a row of memory cells is programmed with charge levels that take into account the charge that will be added to the memory cells when proximate memory cells are subsequently programmed. | 03-26-2015 |
20150092494 | Vertical Gate Stacked NAND and Row Decoder for Erase Operation - A three-dimensional integrated circuit non-volatile memory array includes a memory array with multiple vertical gate NAND memory cell strings formed in a different vertical layers over a substrate which share a common set of word lines, where different groupings of NAND memory cell strings formed between dedicated pairings of source line structures and bit line structures form separately erasable blocks which are addressed and erased by applying an erase voltage to the source line structure of the erase block being erased while applying a ground voltage to the other source line structures in the array and a high pass voltage to the bit line structures in the array. | 04-02-2015 |
20150092495 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes a memory cell array configured to store data; peripheral circuits configured to perform program verifying operation, read operation, and erase verifying operation on the memory cell array; and a control circuit configured to control the peripheral circuits, wherein the control circuit is configured to control the peripheral circuits to set a bit line voltage in the program verifying operation to have a higher level than a bit line voltage in the read operation, and a bit line voltage in the erase verifying operation to have a lower level than the bit line voltage in the read operation. | 04-02-2015 |
20150103599 | METHOD OF OPERATING MEMORY DEVICE ASSURING RELIABILITY AND MEMORY SYSTEM - A method of operating a memory device to guarantee program reliability and a memory system using the same are provided. The method includes backing up data stored in the memory cells connected to a first word line, performing a dummy program operation on memory cells connected to a second word line adjacent to the first word line, and performing a recharge program operation on the memory cells connected to the first word line. | 04-16-2015 |
20150109862 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes first and second word line groups, each including a plurality of stacked word lines above a substrate, a first memory string including a first memory column through the first word line group, a second memory column through the second word line group, and a first memory connection portion electrically coupling the first and second memory columns, and a second memory string including a third memory column through the first word line group, a fourth memory column through the second word line group, and a second memory connection portion electrically coupling the third and fourth memory columns. The first memory connection portion is formed in a first layer of the substrate and the second memory connection portion is formed in a second layer of the substrate that is lower than the first layer. | 04-23-2015 |
20150109863 | SEMICONDUCTOR MEMORY DEVICE FOR STORING MULTIVALUED DATA - Data storage circuits are connected to the bit lines in a one-to-one correspondence. A write circuit writes the data on a first page into a plurality of 5 first memory cells selected simultaneously by a word line. Thereafter, the write circuit writes the data on a second page into the plurality of first memory cell. Then, the write circuit writes the data on the first and second pages into second memory cells adjoining 10 the first memory cells in the bit line direction. | 04-23-2015 |
20150117104 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device for high speed operation, and for flexible data reading and programming is disclosed. The flash memory of the present disclosure includes: a page buffer/sensor circuit including a volatile memory element that may maintain data with a size corresponding to a page of a memory array; a high speed cache register including a non-volatile memory element that may maintain data with a size corresponding to a page of a memory array. The page buffer/sensor circuit includes a sensor circuit, a data register, and a transmission gate. The data register may transmit and receive data with an input-output buffer. The high speed cache register includes RRAM, wherein the RRAM may transmit and receive data with an input-output buffer via a transmission gate, and may transmit and receive data with the data register via a transmission gate. | 04-30-2015 |
20150117105 | NONVOLATILE MEMORY DEVICE AND METHOD DETECTING DEFECTIVE WORD LINE - The inventive concept relates to a nonvolatile memory device and a method of detecting a defective word line. The method includes executing a defective word line detection operation using a program/erase voltage applied to a selected word line, wherein the defective word line detection operation determines whether or not the selected word line is defective in relation to respective word line voltage responses for the first and second segments during execution of the program/erase operation. | 04-30-2015 |
20150117106 | FLASH MEMORY COUNTER - A method of updating a counter in a flash memory includes a first phase where a set of values capable of being taken by the counter are programmed in at least one page of the flash memory. A second phase of updating the counter programs a state zero in the flash memory each time the counter is incremented/decremented. | 04-30-2015 |
20150117107 | READ OPERATION FOR A NON-VOLATILE MEMORY - Apparatuses, systems, and methods are disclosed for a read operation for a non-volatile memory. A method includes determining whether one or more non-volatile storage cells satisfy a predefined condition. A method includes preparing the one or more non-volatile storage cells for use prior to satisfying a read request from a storage client using the one or more non-volatile storage cells in response to determining that a predefined condition is satisfied. | 04-30-2015 |
20150124529 | SEMICONDUCTOR DEVICE, METHOD FOR OPERATING THE SAME, AND SEMICONDUCTOR SYSTEM INCLUDING THE SAME - A semiconductor device includes a page buffer configured to read data out of a memory cell array in response to a bias enable signal, and a control logic configured to generate the bias enable signal and a bias precharge signal that are used to control the memory cell array. The control logic activates the bias enable signal and the precharge signal before a ready/busy signal activating a read operation of the memory cell array is enabled. | 05-07-2015 |
20150131379 | BAD BLOCK COMPENSATION FOR SOLID STATE STORAGE DEVICES - Technologies and implementations for reusing bad blocks in a solid state drive are generally disclosed. | 05-14-2015 |
20150131380 | ADAPTIVE INITIAL PROGRAM VOLTAGE FOR NON-VOLATILE MEMORY - When programming a set of non-volatile storage elements using a multi-stage programming process, a series of programming pulses are used for each stage. The magnitude of the initial program pulse for the current stage being performed is dynamically set as a function of the number of program pulses used for the same stage of the multi-stage programming process when programming non-volatile storage elements connected to on one or more previously programmed word lines. | 05-14-2015 |
20150294726 | NAND-TYPE FLASH MEMORY DEVICE AND METHOD OF PROGRAMMING THE SAME - A NAND-type flash memory device and method for programming the NAND-type flash memory device are provided. The method may include applying a voltage of 0 V to an unselected string select line, applying the voltage of 0 V to a selected bit line, applying a supply voltage to a selected string select line, and applying a dummy pass voltage to a dummy word line, the dummy pass voltage being in a range between 0 V to a pass voltage. The method may further include applying the supply voltage to an unselected bit line, applying the pass voltage to a selected word line, applying the pass voltage to an unselected word line; and applying a program voltage to the selected word line. | 10-15-2015 |
20150294741 | METHOD AND APPARATUS FOR DEFECT REPAIR IN NAND MEMORY DEVICE - System and method of selecting defective columns in NAND memory devices for repair. After locating the defective blocks and defective columns in a NAND memory device, a weight value is calculated for each defective block by dividing a total number of defective blocks that would be inherently repaired as a result of repairing the respective defective block by a number of defective data columns in the respective defective block. A defective block with the greatest weight value is selected for repair in which the defective columns in the selected block are substituted by redundant columns. Other defective blocks with defective columns having the same column addresses with the defective columns in the selected defective block are automatically selected for repair as well. Remaining defective columns are selected for repair by iteratively updating weight values and selecting a defective block that has the greatest weight value among the remaining defective blocks. | 10-15-2015 |
20150318046 | MAINTAINING VERSIONS OF DATA IN SOLID STATE MEMORY - Various embodiments are directed to maintaining versions of data within a solid state memory. At least one request to write at least one dataset to a logical page of a solid state memory is received from a file system. At least one physical page in a data block of the solid state memory associated with the logical page is identified. A processor stores the dataset in the at least one physical page. At least one data versioning tag is associated with the at least one dataset in a data structure associated with the logical page. The data versioning tag identifies the at least one dataset as a given version of the logical page. The at least one dataset is maintained as accessible from the at least one physical page irrespective of subsequent write operations to the logical page in response to associating the at least one data versioning tag. | 11-05-2015 |
20150325288 | APPARATUSES AND METHODS FOR PERFORMING MULTIPLE MEMORY OPERATIONS - The disclosed technology relates to a memory device configured to perform multiple access operations in response to a single command received through a memory controller and a method of performing the multiple access operations. In one aspect, the memory device includes a memory array comprising a plurality of memory cells and a memory controller. The memory controller is configured to receive a single command which specifies a plurality of memory access operations to be performed on the memory array. The memory controller is further configured to cause the specified plurality of memory access operations to be performed on the memory array. | 11-12-2015 |
20150325306 | SEMICONDUCTOR MEMORY DEVICE AND A READING METHOD THEREOF - A semiconductor memory device may include a common source line controller configured to provide a channel current to a cell string via a common source line during a read operation and a page buffer configured to detect data stored in a selected memory cell by detecting a current of the bit line when the channel current is provided. The page buffer may selectively bias the bit line to maintain a voltage of the bit line to be the same as or higher than a reference voltage. | 11-12-2015 |
20150332770 | NONVOLATILE MEMORY DEVICE, STORAGE DEVICE INCLUDING THE NONVOLATILE MEMORY DEVICE, AND OPERATING METHOD OF THE STORAGE DEVICE - A storage device includes a nonvolatile memory device and a memory controller is provided. The nonvolatile memory device includes a plurality of blocks. The memory controller is configured to detect, upon receiving a power-on signal, a partial block among the plurality of blocks. The partial block includes a first page incompletely programmed due to sudden power-off occurred to the storage device. The memory controller determines whether or not to perform a dummy program operation on the partial block, and programs a second page of the partial bock with dummy data. The first page is different from the second page. | 11-19-2015 |
20150332775 | SEMICONDUCTOR MEMORY DEVICE STORING MANAGEMENT DATA REDUNDANTLY IN DIFFERENT PAGES - A semiconductor memory device includes a memory cell array that is capable of storing data in a nonvolatile manner, and a control section that controls data access to the memory cell array. The memory cell array stores the same data redundantly in a plurality of pages. The control section executes a reading operation on the plurality of pages that store the same data redundantly to read the data. The data that is stored redundantly may be management data or user data. | 11-19-2015 |
20150348632 | MITIGATION OF DATA RETENTION DRIFT BY PROGRAMMING NEIGHBORING MEMORY CELLS - A method includes, in a plurality of memory cells that share a common isolation layer and store in the common isolation layer quantities of electrical charge representative of data values, assigning a first group of the memory cells for data storage, and assigning a second group of the memory cells for protecting the electrical charge stored in the first group from retention drift. Data is stored in the memory cells of the first group. Protective quantities of the electrical charge that protect from the retention drift in the memory cells of the first group are stored in the memory cells of the second group. | 12-03-2015 |
20150348634 | SEMICONDUCTOR MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME, AND OPERATING METHOD THEREOF - A semiconductor memory device includes a plurality of memory cells coupled between a source line and a bit line, a voltage generation circuit suitable for applying an erase voltage to the source line during an erase operation, and a read and to circuit coupled to the bit line through a selection transistor and suitable for applying an operating voltage to a first node of the selection transistor during the erase operation. | 12-03-2015 |
20150348638 | SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A semiconductor device and a method of operating the same are provided. The semiconductor device includes a memory block including a plurality of pages having a plurality of first cells and a plurality of second cells, a circuit group configured to read first cells and second cells of a selected page of the pages, a strobe signal control circuit configured to store source bouncing information generated during a read operation of the first cells of the selected page and output a strobe signal based on stored information, and a control circuit configured to control the circuit group in response to the strobe signal during a read operation of the second cells of the selected page. | 12-03-2015 |
20150348639 | CELL STRING AND READING METHOD FOR THE CELL STRING - Provided are a cell string and a reading method for the cell string. The cell string includes a semiconductor body formed on a surface of an insulating layer, first and second semiconductor regions formed at respective ends of the semiconductor body and are formed by being doped with different types of impurities, two or more control electrodes which are separated from each other to be electrically isolated, and a gate insulating film stack which is formed between the semiconductor body and the control electrodes, wherein the semiconductor body is configured to include at least two layers, and adjacent layers of the semiconductor body have different energy band gaps, wherein the semiconductor body is formed by an intrinsic semiconductor or a semiconductor being doped with impurities, and wherein the first and second semiconductor regions are doped with impurities of which concentration is higher than that of the semiconductor body. | 12-03-2015 |
20150380091 | METHODS OF PROGRAMMING MEMORIES - Methods of programming memories include applying a first plurality of programming pulses to the group of memory cells to program first data to the group of memory cells, determining an upper limit of a resulting threshold voltage distribution for the group of memory cells following a particular programming pulse of the first plurality of programming pulses, and applying a second plurality of programming pulses to the group of memory cells to program second data to the group of memory cells, wherein a characteristic of at least one of the programming pulses of the second plurality of programming pulses is at least partially based on the determined upper limit of the threshold voltage distribution. Methods of programming memories further include programming information indicative of usage of memory cells of a page of memory cells to the page of memory cells during a portion of a programming operation. | 12-31-2015 |
20150380095 | TECHNIQUES FOR IMPROVING RELIABILITY AND PERFORMANCE OF PARTIALLY WRITTEN MEMORY BLOCKS IN MODERN FLASH MEMORY SYSTEMS - Methods and apparatus to improve reliability and/or performance of partially written memory blocks in flash memory systems are described. In some embodiments, a storage device stores information corresponding to a partial write operation performed on a partially programmed memory block of a non-volatile memory. Memory controller logic then cause application of a reduced voltage level and/or an offset value to portion(s) of the non-volatile memory during a read or write operation to the non-volatile memory based at least in part on the stored information. Other embodiments are also disclosed and claimed. | 12-31-2015 |
20150380100 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF - A nonvolatile semiconductor memory device includes a memory cell array having first and second groups of memory strings, each memory string including first and second memory cells connected between select transistors. The nonvolatile semiconductor memory device further includes a first word line connected to the first memory cells of the memory strings, a second word line connected to the second memory cells of the memory strings, and a control unit configured to control application of control voltages to the select transistors and the word lines, such that a select line voltage is applied to the first word line and a non-select line voltage is applied to the second word line and not discharged while select transistors of the first group of memory strings are turned off and select transistors of the second group of memory strings are turned on. | 12-31-2015 |
20160005469 | NON-VOLATILE MEMORY DEVICE HAVING CONFIGURABLE PAGE SIZE - A flash memory device having at least one bank, where the each bank has an independently configurable page size. Each bank includes at least two memory planes having corresponding page buffers, where any number and combination of the memory planes are selectively accessed at the same time in response to configuration data and address data. The configuration data can be loaded into the memory device upon power up for a static page configuration of the bank, or the configuration data can be received with each command to allow for dynamic page configuration of the bank. By selectively adjusting a page size the memory bank, the block size is correspondingly adjusted. | 01-07-2016 |
20160005473 | PROGRAMMING OF MEMORY DEVICES - Methods of operating a memory device include programming a page of a memory block of the memory device using a particular starting programming voltage, determining a programming voltage indicative of a programming efficiency of the page of the memory block during programming of the page of the memory block, storing a representation of the programming voltage indicative of the programming efficiency of the page of the memory block, setting a starting programming voltage for a different page of the memory block in response to the stored representation of the programming voltage indicative of the programming efficiency of the page of the memory block, and programming the different page of the memory block using its starting programming voltage. | 01-07-2016 |
20160005479 | READING METHOD FOR A CELL STRING - A reading method for a cell string includes a pre-charging step and a reading step to read a selected word line cell WL[k]. The pre-charging step comprises applying a positive pass voltage (V | 01-07-2016 |
20160005482 | FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM INCLUDING THE SAME - A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit. | 01-07-2016 |
20160005483 | FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM INCLUDING THE SAME - A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit. | 01-07-2016 |
20160005484 | FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM INCLUDING THE SAME - A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit. | 01-07-2016 |
20160005490 | NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD OF THE SAME - A non-volatile memory device includes a memory cell array having a plurality of memory cells programmable into one of multiple logic states, the plurality of memory cells disposed at intersections of a plurality of wordlines and a plurality of bitlines, and a plurality of page buffers respectively connected to the plurality of bitlines and performing verifying read operations on the plurality of memory cells, The verifying read operations are performed on a first memory cell having a target state and a second memory cell having a lower state than the target state. | 01-07-2016 |
20160012899 | Incremental step pulse programming (ISPP) scheme capable of determining a next starting pulse based on a current program-verify pulse for improving programming speed | 01-14-2016 |
20160019969 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device according to an embodiment of the present invention includes a first cell string and a second cell string coupled to a first word line group and a second word line group, respectively. An operating method of the semiconductor memory device may include forming a channel in the second cell string by applying a pass voltage to the second word line group, reflecting data of a selected memory cell coupled to a selected word line of the first word line group, among memory cells of the first cell string, on the channel of the second cell string through the bit line, and determining the data of the selected memory cell by sensing a quantity of electric charge of the second cell string through the bit line. | 01-21-2016 |
20160027518 | MEMORY DEVICE AND METHOD FOR CONTROLLING THE SAME - A memory device connectable to a host device includes a non-volatile semiconductor memory unit including a plurality of memory blocks, each of the memory blocks including a plurality of pages, and a control unit configured to carry out data writing in the non-volatile semiconductor memory unit in units of a page and data erasing in the non-volatile semiconductor memory unit. When the control unit carries out data writing of a plurality of pages, the control unit splits data erasing of one memory block into a plurality of sub erasing steps and carries out one sub erasing step between the data writing of pages. | 01-28-2016 |
20160027525 | NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF - A method of programming a nonvolatile memory device is provided which includes applying a program voltage to selected ones of a plurality of memory cells; applying a selected one of a plurality of verification voltages after pre-charging bit lines connected to memory cells to which the program voltage is applied; sensing the memory cells to which the selected verification voltage is applied; selecting memory cells programmed to a target state referring to the sensing result and target state data; and determining whether programming of the selected memory cells is passed or failed. | 01-28-2016 |
20160035427 | DATA STORAGE DEVICE AND OPERATION METHOD THEREOF - A data storage device includes a nonvolatile memory having a plurality of first memory cells connected to a first word line and a plurality of second memory cells connected to a second word line. A memory controller divides first data to be programmed in the first memory cells into first and second data groups and divides second data to be programmed in the second memory cells into third and fourth data groups. The nonvolatile memory device performs a third program operation of the second data group and a fourth program operation of the fourth data group after sequentially performing a first program operation of the first data group and a second program operation of the third data group. | 02-04-2016 |
20160049199 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile semiconductor memory device according to an embodiment comprises a control unit, during a data erase, applying at least to a word line connected to a memory cell disposed most to a source line side a lower control voltage than that applied to a word line connected to a memory cell disposed most to a bit line side, of a plurality of word lines connected to at least a plurality of memory cells mutually written with data of an identical number of bits in a cell string. | 02-18-2016 |
20160049202 | VERTICAL GATE STACKED NAND AND ROW DECODER FOR ERASE OPERATION - A three-dimensional integrated circuit non-volatile memory array includes a memory array with multiple vertical gate NAND memory cell strings formed in a different vertical layers over a substrate which share a common set of word lines, where different groupings of NAND memory cell strings formed between dedicated pairings of source line structures and bit line structures form separately erasable blocks which are addressed and erased by applying an erase voltage to the source line structure of the erase block being erased while applying a ground voltage to the other source line structures in the array and a high pass voltage to the bit line structures in the array. | 02-18-2016 |
20160055919 | NONVOLATILE MEMORY DEVICES AND PROGRAM VERIFICATION METHODS - A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages. | 02-25-2016 |
20160064089 | PAGE OR WORD-ERASABLE COMPOSITE NON-VOLATILE MEMORY - A non-volatile memory includes bit lines, a first page-erasable sector including memory cells of a first type, and a second word-erasable or bit-erasable sector including memory cells of a second type. The memory cells of the first type comprise a single floating-gate transistor and the memory cells of the second type comprise a first floating-gate transistor and a second floating-gate transistor the floating gates of which are electrically coupled, the second floating-gate transistor of a memory cell of the second type enabling the memory cell to be individually erased. | 03-03-2016 |
20160064096 | NONVOLATILE MEMORY SYSTEM THAT USES PROGRAMMING TIME TO REDUCE BIT ERRORS - A nonvolatile memory system and a method for using programming time to reduce bit errors in the nonvolatile memory system are disclosed. The method includes programming a plurality of memory cells of a nonvolatile memory device, identifying weak cells using programming time and preventing subsequent programming to the identified weak cells. | 03-03-2016 |
20160071592 | 3D FLASH MEMORY DEVICE HAVING DIFFERENT DUMMY WORD LINES AND DATA STORAGE DEVICES INCLUDING SAME - A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line. | 03-10-2016 |
20160071599 | Method and Apparatus for Writing Nonvolatile Memory using Multiple-Page Programming - A method of storing information or data in a nonvolatile memory device with multiple-page programming is disclosed. The method, in one aspect, is able to activate a first drain select gate (“DSG”) signal. After loading the first data from a bit line (“BL”) to a nonvolatile memory page of a first memory block in response to activation of the first DSG signal during a first clock cycle, the first DSG signal is deactivated. Upon activating a second DSG signal, the second data is loaded from the BL to a nonvolatile memory page of a second memory block. The first data and the second data are simultaneously written to the first memory block and the second memory block, respectively. | 03-10-2016 |
20160071605 | CONCURRENTLY READING FIRST AND SECOND PAGES OF MEMORY CELLS HAVING DIFFERENT PAGE ADDRESSES - In an embodiment, a first page of memory cells in a first memory plane is read concurrently with a second page of memory cells in a second memory plane. The second memory plane is different than the first memory plane, but is in the same memory array as the first memory plane. The second page of memory cells has a different page address than the first page of memory cells. | 03-10-2016 |
20160078945 | INCREMENTAL STEP PULSE PROGRAMMING - The disclosed technology provides enables incremental step pulse programming (ISPP) operations with variable pulse step height control. In particular, a storage device is configured to select a pulse step height for an ISPP operation of one or more memory cells of a storage device based on a write frequency of data programmed via the ISPP operation. The storage device saves the data by applying a series of electrical pulses to the one or more memory cells, each subsequent pulse increasing in magnitude by the selected pulse step height. | 03-17-2016 |
20160078946 | MEMORY SYSTEM AND OPERATION METHOD THEREOF - A memory system includes a memory device having a plurality of memory blocks, each including a plurality of pages, each page including a plurality of memory cells, wherein data provided from a host device is written on the plurality of pages and the plurality of memory cells coupled to a plurality of word lines; and a controller suitable for setting word line zones by grouping the plurality of word lines by a predetermined number, and performing a bad management for the memory blocks in each of the word line zones. | 03-17-2016 |
20160078948 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a first memory string including a first memory cell and a second memory cell, a second memory string including a third memory cell, a bit line connected to both one end of the first memory string and one end of the second memory string, a first word line connected to gates of the first and third memory cells, a second word line connected to a gate of the second memory cell, and a control circuit configured to determine a program condition of the first memory cell that have been selected for a write operation, and perform the write operation for the third memory cell based on the program condition of the first memory cell. | 03-17-2016 |
20160086675 | WORD LINE DEPENDENT TEMPERATURE COMPENSATION SCHEME DURING SENSING TO COUNTERACT CROSS-TEMPERATURE EFFECT - Methods for reducing cross-temperature dependent word line failures using a temperature dependent sensing scheme during a sensing operation are described. In some embodiments, during a read operation, the sensing conditions applied to memory cells within a memory array (e.g., the sensing time, source line voltage, or bit line voltage) may be set based on a temperature of the memory cells during sensing and a word line location of the memory cells to be sensed. In one example, the memory array may comprise a NAND memory array that includes a NAND string and the sensing time for sensing a memory cell of the NAND string and the source line voltage applied to a source line connected to a source end of the NAND string may be set based on the temperature of the memory cells during sensing and the word line location of the memory cells to be sensed. | 03-24-2016 |
20160093379 | NAND MEMORY ADDRESSING - Technology for performing addressing in a NAND memory is described. A defined number of address cycles supported at either a memory controller or a NAND memory to address individual memory units in the NAND memory can be identified. The defined number of address cycles in which to operate can be selected in order to address the individual memory units in the NAND memory. Either the memory controller or the NAND memory can be configured to operate at the selected number of address cycles where the individual memory units in the NAND memory are uniquely addressable using a multi die select (MDS). | 03-31-2016 |
20160093383 | METHOD AND APPARATUS FOR RELOCATING DATA IN NON-VOLATILE MEMORY - Apparatus and methods implemented therein, in response to receiving an indication to program data to both a primary and secondary memory page determine whether a folding operation is in progress. In response to determining that the folding operation is in progress, programming of the data is delayed until completion of the folding operation. In response to determining the completion of the folding operation, data is programmed to the primary memory page and secondary memory page. | 03-31-2016 |
20160093384 | SELF-TIMED SLC NAND PIPELINE AND CONCURRENT PROGRAM WITHOUT VERIFICATION - A hierarchical-GBL/LBL NAND array with a plurality of LG and MG groups in either orthogonal BL/CSL scheme or parallel BL/SL scheme including a plurality of block-decoders with a shared self-timed delay control circuit and a plurality of fully-shielding dynamic CACHE registers made of 2 local broken metal lines within the array and DRAM-like SA is provided. Each DCR capacitor is flexibly expandable by connecting multiple C | 03-31-2016 |
20160093388 | NONVOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF - An operating method of a nonvolatile memory device is provided. The nonvolatile memory device includes first and second page buffers, and first and second bit lines connected thereto, respectively. First and second latch nodes of the first page buffer are charged to have a voltage having a first level according to data stored in a first latch of the first page buffer. After the charging of the first latch node is started, a sensing node of the second page buffer is pre-charged. The sensing node is connected to the second bit line. Data stored in the first latch is dumped into a second latch of the first page buffer during the pre-charging of the sensing node of the second page buffer. | 03-31-2016 |
20160093394 | STORAGE DEVICE AND OPERATING METHOD OF STORAGE DEVICE - An operating method is provided which includes receiving a read command and a read address, performing a read operation about memory cells selected according to the read address, and performing a reliability verification read operation about unselected memory cells adjacent to the selected memory cells. A number of memory cells each corresponding to at least one state of an erase state and program states of the unselected memory cells is counted as a count value based on the result of the reliability verification read operation. Data read through the read operation is output to an external device and data read through the reliability verification read operation is not output to the external device. | 03-31-2016 |
20160099057 | BLOCK REFRESH TO ADAPT TO NEW DIE TRIM SETTINGS - Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set. | 04-07-2016 |
20160104539 | STORAGE DEVICE AND RELIABILITY VERIFICATION METHOD - A method controlling the execution of a reliability verification operation in a storage device including a nonvolatile memory device includes; determining whether a read count for a designated unit within the nonvolatile memory device exceeds a count value limit, and upon determining that the read count exceeds the count value limit, executing the reliability verification operation directed to the designated unit, wherein the count value limit is based on at least one of read count information, page bitmap information and environment information stored in the storage device. | 04-14-2016 |
20160104540 | NON-VOLATILE MEMORY DEVICE AND OPERATING METHOD THEREOF - An operating method of a non-volatile memory device may include erasing memory cells included in a plurality of strings of a memory block, wherein the memory cells are coupled between a bit line and a common source line. The operating method of the non-volatile memory device may include performing an erase verify operation on selected memory cells having a low erase speed, among the memory cells. The operating method of the non-volatile memory device may include repeating the erasing of the memory cells and the performing of the erase verify operation until the erase verify operation passes. | 04-14-2016 |
20160111161 | BIASING OF UNSELECTED BLOCKS OF NON-VOLATILE MEMORY TO REDUCE LOADING - Techniques are presented for reducing the loading on the source lines for NAND type memories that decode memory blocks in multi-block groups, an example 3D NAND memory of the BiCS type. When multiple blocks are commonly decoded, a decoded group may include both selected and unselected blocks. The word lines of a selected block are biased according the operation, while the word lines of the non-selected blocks of the group are set at the level of the source line. This reduces the amount of loading on the source line due to less capacitance between the source line and word lines. | 04-21-2016 |
20160118129 | READ VOLTAGE ADJUSTMENT - The present disclosure includes apparatuses and methods related to adjusting read voltages of charge-trapping flash memory. An example embodiment apparatus can include a memory array and a controller coupled to the memory array. The controller is configured to adjust a read voltage used to access a portion of the memory array based on a length of time since a last WRITE operation to the portion. | 04-28-2016 |
20160125947 | PROGRAMMING METHOD FOR NAND-TYPE FLASH MEMORY - The invention provides a programming method for a NAND-type flash memory capable of reducing the drop in reliability due to data-rewriting. The programming method includes: when a block program mode is executed to perform programming for a plurality of pages in a block, while the data to be programmed is being loaded into a cache memory; and erasing the selected block; and programming the data to be programmed which is loaded into the cache memory to the erased block. | 05-05-2016 |
20160125948 | SENSE AMPLIFICATION CIRCUITS, OUTPUT CIRCUITS, NONVOLATILE MEMORY DEVICES, MEMORY SYSTEMS, MEMORY CARDS HAVING THE SAME, AND DATA OUTPUTTING METHODS THEREOF - An output circuit of a nonvolatile memory device includes a sense amplification circuit configured to, during a sensing operation, generate output data based on a comparison between a first voltage on a data line and a reference voltage on a reference data line during a sensing operation, the first voltage corresponding to data read from at least one memory cell, and the sense amplification circuit being further configured to connect the reference data line with a ground terminal during the sensing operation. | 05-05-2016 |
20160141033 | MEMORY SYSTEM AND ASSEMBLING METHOD OF MEMORY SYSTEM - According to one embodiment, each memory chip included in a memory package includes a first storage unit that stores therein first information that is n-bit information and is a comparison target of a chip address, and is used for identifying its own memory chip, a second storage unit that stores therein second information for determining an effective bit of the n-bit first information, and a control unit that determines an effective bit of the n-bit first information and an effective bit of the chip address based on the second information. | 05-19-2016 |
20160141038 | SEMICONDUCTOR DEVICE - A semiconductor device includes memory blocks including a plurality of memory cells, wherein the plurality of memory cells are divided into a plurality of pages, and an operation circuit suitable for outputting operating voltages to local lines of the memory blocks to perform a program loop, an erase loop and a read operation on the plurality of memory cells, wherein the operation circuit is suitable for applying a dummy pulse having a positive potential to the local lines after the program loop or the erase loop is completed. | 05-19-2016 |
20160148700 | MEMORY SYSTEM AND DATA PROCESING METHOD FOR MEMORY - The present invention relates to a memory system and a data processing method in a memory, and more particularly, to a memory system for efficiently processing data and a data processing method in a memory. | 05-26-2016 |
20160148702 | CALIBRATING OPTIMAL READ LEVELS - After a predetermined period of time in a life cycle of a flash memory device, a plurality of reliability values corresponding to a plurality of reads of one or more of the plurality of memory cells are generated; each of the reads using a variation of a predetermined read level voltage. An offset voltage is then identified, offset from the read level voltage. The offset voltage corresponds to a zero crossing point in the range of the reliability values. Once the offset voltage is identified, the read level voltage is set to a calibrated voltage based on the offset voltage. | 05-26-2016 |
20160163386 | NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE - A nonvolatile memory device includes a memory cell array including cell strings stacked in a direction orthogonal to a substrate and including a first substring group and a second substring group dividing the cell strings, and an address decoder connected to memory cells of the cell strings via a plurality of word lines and configured to provide operating voltages to the memory cells, wherein the address decoder is disposed between the first substring group and second substring group. | 06-09-2016 |
20160163393 | PARTIAL BLOCK ERASE FOR DATA REFRESHING AND OPEN-BLOCK PROGRAMMING - Systems and methods for performing partial block erase operations on a subset of word lines within a memory array prior to performing data refreshing or open-block programming are described. In some cases, data stored in memory cells connected to a word line with a fail bit count above an error threshold (e.g., more than two bit errors per page or more than three bit errors per word line) may be refreshed by performing a read operation on the memory cells, generating corrected data for the memory cells, performing a partial block erase operation on one or more word lines including the word line, and then writing the corrected data into the memory cells. The one or more word lines may include the word line with the fail bit count above the error threshold and an adjacent word line that is adjacent to the word line. | 06-09-2016 |
20160163395 | NAND FLASH MEMORY AND READING METHOD THEREOF - The disclosure provides a NAND flash memory and a reading method thereof, which may read a negative threshold value of a memory cell without using a negative-voltage-generating circuit. The disclosed NAND flash memory includes a sense amplifier, a bit line selecting circuit and an array having a plurality of NAND string units. The disclosed NAND flash memory includes a ΔV supplying portion element that applies a positive voltage to a source line, a P well formed with a selected memory cell, and a non-selected bit line which is adjacent to a selected bit line, within a predetermined time period, after the selected bit line is pre-charged and during a reading process. | 06-09-2016 |
20160172037 | NOVEL LV NAND-CAM SEARCH SCHEME USING EXISTING CIRCUITS WITH LEAST OVERHEAD | 06-16-2016 |
20160172039 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME | 06-16-2016 |
20160172043 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME | 06-16-2016 |
20160172045 | Partial Block Erase For Open Block Reading In Non-Volatile Memory | 06-16-2016 |
20160172049 | SEMICONDUCTOR DEVICE AND METHOD OF OPERATING THE SAME | 06-16-2016 |
20160172050 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF | 06-16-2016 |
20160180936 | MEMORY SYSTEM AND OPERATING METHOD THEREOF | 06-23-2016 |
20160180947 | SEMICONDUCTOR MEMORY DEVICE | 06-23-2016 |
20160189787 | FLASH MEMORY DEVICE AND FLASH MEMORY SYSTEM INCLUDING THE SAME - A flash memory device including: a memory cell array; a signal generator inputting a first data fetch signal and outputting a second data fetch signal; and an output buffer circuit configured to output data from the memory cell array in sync with rising and falling edges of the second data fetch signal, wherein second data fetch signal is output along with data output from the output buffer circuit. | 06-30-2016 |
20160189788 | NAND Flash Memory Device - Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities. | 06-30-2016 |
20160379715 | METHOD AND APPARATUS FOR REDUCING READ LATENCY FOR A BLOCK ERASABLE NON-VOLATILE MEMORY - Provided are an apparatus, memory controller and method for performing a block erase operation with respect to a non-volatile memory. A command is generated to perform a portion of the block erase operation. At least one read or write operation is performed after executing the command. An additional instance of the command is executed in response to determining that the block erase operation did not complete after performing the at least one read or write operation. | 12-29-2016 |
20170236588 | MEMORY CHIP AND OPERATING METHOD THEREOF | 08-17-2017 |
20170236591 | SEMICONDUCTOR DEVICE AND METHOD FOR OPERATING THE SAME | 08-17-2017 |
20170236595 | SEMICONDUCTOR MEMORY DEVICE | 08-17-2017 |
20190147959 | METHODS AND APPARATUS FOR WRITING NONVOLATILE 3D NAND FLASH MEMORY USING MULTIPLE-PAGE PROGRAMMING | 05-16-2019 |
20190147960 | BIAS SCHEME FOR WORD PROGRAMMING IN NON-VOLATILE MEMORY AND INHIBIT DISTURB REDUCTION | 05-16-2019 |