| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 360328000 | Magnetostrictive head | 6 |
| 20080218915 | Tunnel Magnetoresistive Effect Element With Lower Noise and Thin-Film Magnet Head Having the Element - Provided is a TMR effect element having no special structures needing much man-hour cost for the formation, in which the high temperature noise and the low temperature noise are suppressed and a sufficiently high resistance-change ratio is provided. The TMR effect element comprises: a tunnel barrier layer formed by oxidizing a base film; and two ferromagnetic layers stacked so as to sandwich the tunnel barrier layer, the base film having a film thickness larger than a film thickness at which a resistance-change ratio of the TMR effect element indicates a maximum value. Here, in the case that the base film is an aluminum film, the film thickness of the aluminum film is preferably in the range of 0.50 nm to 1.5 nm. | 09-11-2008 |
| 20080247098 | Stressed magnetoresistive tamper detection devices - A tamper sensing system mounted with respect to a protected structure so as to have corresponding stress changes occur therein in response to selected kinds of tamperings with said protected structure comprising a first pair of stress affected magnetoresistive memory devices each capable of having a magnetic material layer therein established in a selected one of a pair of alternative magnetization states if in a first kind of stress condition and of being established in a single magnetization state if in an alternative second kind of stress condition, and the magnetic material layer in each having a magnetization in a first direction in one of the pair of alternative magnetization states and in a second direction in that remaining one of the pair of magnetization states. A first magnetizing electrical conductor extends adjacent to each of the first pair of stress affected magnetoresistive memory devices to establish said magnetic material layer in that one of said pair of alternative magnetization states thereof so as to have its said corresponding magnetization be oppositely directed with respect to said magnetization of that other. The first pair of stress affected magnetoresistive memory devices can each be provided by a spin dependent tunneling device having differing numbers of magnetization states available thereto depending on whether being in differing ones of alternative stress conditions | 10-09-2008 |
| 20090244793 | MAGNETIC TRANSFER METHOD AND MASTER MANUFACTURING METHOD - A magnetic transfer method includes arranging a magnetic transfer master so as to cause a surface of the magnetic transfer master to be in proximity to or in contact with a vertical magnetic recording medium. The magnetic transfer master has on the surface thereof a concave-convex pattern representing information. A top surface of a convex portion of the concave-convex pattern is divided by a plurality of projecting threads lined up and extending at an interval shorter than a shortest pattern length of the concave-convex pattern. The magnetic transfer method includes applying a magnetic field to the magnetic transfer master in a direction along the surface and intersecting the projecting threads. | 10-01-2009 |
| 20100157485 | WAVELETS-BASED DETECTION OF PROXIMITY BETWEEN A SENSOR AND AN OBJECT - A circuit includes a proximity detection component that applies wavelet analysis to a sensed signal from a sensor and responsively provides an output indicative of whether proximity exists between the sensor and an object that causes the sensor to produce the sensed signal. | 06-24-2010 |
| 20120002331 | MAGNETIC RECORDING HEAD AND MAGNETIC RECORDING APPARATUS - According to one embodiment, there is provided a magnetic recording head including a main pole, and a spin torque oscillator provided adjacent to the main pole and includes an oscillation layer including a first magnetic layer and a second magnetic layer and a third magnetic layer provided closer to the second magnetic layer and configured to inject a spin into the oscillation layer. The first magnetic layer has a saturation flux density of 1 T or more and 1.9 T or less. | 01-05-2012 |
| 20120113549 | MANUFACTURING METHOD FOR MAGNETIC RECORDING MEDIUM, MAGNETIC RECORDING/REPRODUCING DEVICE - Disclosed is a method of manufacturing a magnetic recording medium having a clear magnetic recording pattern through a simple process. The method includes: forming a magnetic layer on the non-magnetic substrate; forming a mask layer which covers a surface of the magnetic layer; forming a resist layer on the mask layer; patterning the resist layer using a stamp; patterning the mask layer using the resist layer, forming a recess by partially removing a portion of the magnetic layer not covered by the mask layer; forming a non-magnetic layer which covers a surface where a recess is formed; flattening a surface of the non-magnetic layer until the mask layer is exposed; removing an exposed mask layer; removing a protruding portion of the non-magnetic layer; and forming a protective layer which covers a surface where the protruding portion was removed. | 05-10-2012 |
