| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 360315000 | Having multiple interconnected single film MR sensors (e.g., dual magnetoresistive sensor) | 8 |
| 20080231999 | TUNNELING MAGNETORESISTIVE DEVICE AND MAGNETIC HEAD COMPRISING THE SAME - A tunneling magnetoresistive device and a magnetic head including the tunneling magnetoresistive device are provided. The tunneling magnetoresistive device includes a pinned layer and a free layer formed on either side of a tunneling barrier layer, wherein the tunneling barrier layer includes Te—O. | 09-25-2008 |
| 20080239583 | Thin film magnetic head, head gimbal assembly, head arm assembly, magnetic disk device and method of forming thin film magnetic head - The thin film magnetic head includes a main magnetic pole layer conducting a magnetic flux to the recording medium so that the recording medium an be magnetized in a direction orthogonal to a surface thereof; a return yoke layer disposed on a trailing side of the main magnetic pole layer; an intermediate protective layer partially disposed on a magnetic shield layer; and a thermal expansion suppressing layer having an edge located on the intermediate protective layer and being in contact with the return yoke layer in an area where the intermediate protective layer is not formed. If the thin film magnetic head is affected by ambient temperature environment, the thermal expansion suppressing layer suppresses the shift of the main magnetic pole layer and the return yoke layer toward the air bearing surface. This suppresses thermal protrusion from occurring on the thin film magnetic head due to ambient temperature environment. | 10-02-2008 |
| 20080273274 | Magnetic detection element and manufacturing method thereof - Embodiments of the present invention help to suppress etching damage to a non-magnetic intermediate layer in manufacturing steps of a reproducing head. In one embodiment, a reproducing head has two junction insulating films between side ends of magnetoresistive sensor and hard bias films at both left and right of a track width direction of the magnetoresistive sensor. The reproducing head has first junction insulating films in addition to second junction insulating films. The first junction insulating film suppresses etching damage to the non-magnetic intermediate layer in the manufacturing steps of the reproducing head | 11-06-2008 |
| 20080278859 | RESISTIVITY SENSE BIAS CIRCUITS AND METHODS OF OPERATING THE SAME - Resistivity sense bias circuits are described herein. An example resistivity sense bias circuit for use with a magnetoresistive read head includes a current biasing portion configured to provide a bias current across the magnetoresistive read head thereby establishing a bias voltage across the magnetoresistive read head, a resistivity sensing portion coupled to the current biasing portion and configured to sense a change in the bias current based on a resistivity change of the magnetoresistive read head, and a voltage source to provide the bias voltage and to adjust the bias voltage in response to the resistivity change of the magnetoresistive read head. | 11-13-2008 |
| 20080285177 | MAGNETIC RECORDING MEDIUM, METHOD FOR MANUFACTURING THE SAME, AND MAGNETIC RECORDING APPARATUS - According to an aspect of an embodiment, a magnetic recording medium includes a substrate, and a first granular layer formed over the substrate, the first granular layer having a plurality of first magnetic particles and Si oxide separating the plurality of first magnetic particles. The magnetic recording medium further includes a second granular layer formed over the first granular layer, the second granular layer having a plurality of second magnetic particles and Ti oxide separating the plurality of second magnetic particles. | 11-20-2008 |
| 20090021868 | Perpendicular magnetic recording head with a laminated pole - A laminated write pole layer for a PMR write head is disclosed in which a plurality of “n” magnetic layers and “n−1” non-magnetic spacers are formed in an alternating fashion on a substrate. The non-magnetic spacers promote exchange decoupling or antiferromagnetic coupling between adjacent magnetic layers. Writability is improved when the trailing magnetic layer has a thickness greater than the thickness of other magnetic layers and preferably >25% of the total thickness of the magnetic layers. The thicknesses of the other magnetic layers may be equal or may become progressively smaller with increasing distance from the trailing magnetic layer. In another embodiment, the non-magnetic spacer between the trailing magnetic layer and the nearest magnetic layer is replaced by a magnetic spacer made of a soft magnetic material to promote magnetic coupling and effectively increase the thickness of the trailing magnetic layer. | 01-22-2009 |
| 20090073615 | FABRICATION OF MESOSCOPIC LORENTZ MAGNETORESISTIVE STRUCTURES - A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits. | 03-19-2009 |
| 20100118447 | MAGNETIC SENSOR SYSTEM AND METHOD - A sensor system includes a first magnetoresisitive sensor resistor including a pinned magnetic layer having a fixed orientation in a reference magnetization direction. The first sensor resistor is configured such that its resistance changes in response to an angle defined between the reference magnetization direction and a magnetic field. A plurality of second magnetoresisitive sensor resistors are configured to provide a differential signal. Each of the second sensor resistors includes a pinned magnetic layer having a fixed orientation in the reference magnetization direction. Another sensor system includes a first magnetoresisitive sensor resistor having a length axis oriented by 90°+an angle Φ, where Φ<90° relative to a reference magnetization axis. A second magnetoresisitive sensor resistor has a length axis oriented by 90°−Φ relative to the reference magnetization axis. | 05-13-2010 |
