Class / Patent application number | Description | Number of patent applications / Date published |
359344000 | Semiconductor | 73 |
20080239472 | Semiconductor optical amplification module, optical matrix switching device, and drive circuit - A semiconductor optical amplification module that can suppress ringing without increasing power consumption or circuit size or inhibiting high-speed operation. A semiconductor optical amplifier outputs an optical signal inputted according to driving current outputted from a drive circuit. A diode is connected in parallel with the semiconductor optical amplifier. As a result, it becomes possible to suppress ringing without connecting a large resistor to the drive circuit. | 10-02-2008 |
20080310012 | SEMICONDUCTOR OPTICAL AMPLIFYING DEVICE, SEMICONDUCTOR OPTICAL AMPLIFYING SYSTEM AND SEMICONDUCTOR OPTICAL INTEGRATED ELEMENT - A polarization-independent SOA having an InP substrate used as a semiconductor substrate, and an active layer taking an MQW structure formed of a barrier layer made of GaInAs with tensile strain applied thereto and a well layer made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, here, four layers of the well layer and five layers of the barrier layer are alternately laminated, is proposed. | 12-18-2008 |
20080310013 | SEMICONDUCTOR OPTICAL AMPLIFIER PULSE RESHAPER - A method and system includes a pulse reshaper for reshaping and re-amplifying optical signals in a communications network. In one embodiment, a vertical cavity semiconductor optical amplifier (VCSOA) device, comprising dual mode reflectors optically cooperating at each of an input signal wavelength (λ | 12-18-2008 |
20090046354 | Semiconductor Optical Amplifier Having a Non-Uniform Injection Current Density - A semiconductor optical amplifier (SOA) with efficient current injection is described. Injection current density is controlled to be higher in some areas and lower in others to provide, e.g., improved saturation power and/or noise figure. Controlled injection current can be accomplished by varying the resistivity of the current injection electrode. This, in turn, can be accomplished by patterning openings in the dielectric layer above the current injection metallization in a manner which varies the series resistance along the length of the device. | 02-19-2009 |
20090059355 | System and Method for Optical Communication Using Polarization Filtering - An optical circuit is described which may include an SOA-MZI circuit providing an output signal; and a polarization filtering device (PFD) configured to receive the output signal of the SOA-MZI and to provide at least one signal at the output of the PFD. | 03-05-2009 |
20090080064 | Wavelength conversion system, optical integrated device and wavelength conversion method - A wavelength conversion system includes a Mach-Zehnder interferometer including two optical waveguides, a non-linear medium provided on one of the two optical waveguides, and a branching ratio adjuster for adjusting the branching ratio of multiplexed light produced by multiplexing signal light and pumping light so that the powers of the signal light and the pumping light which are to be emitted from the two optical waveguides are equal to each other. The multiplexed light whose branching ratio is adjusted by the branching ratio adjuster is introduced into the two optical waveguides such that the non-linear medium generates phase conjugation light of the signal light and the light guided through the one optical waveguide and the light guided through the other one of the two optical waveguides interfere with each other so that the phase conjugation light is extracted as wavelength conversion light. | 03-26-2009 |
20090122393 | SEMICONDUCTOR OPTICAL AMPLIFIER - A polarization-independent SOA is provided which uses an InP substrate ( | 05-14-2009 |
20090147352 | ELECTRO-ABSORPTION MODULATOR WITH BROAD OPTICAL BANDWIDTH - A method of modulating an optical signal passing through a waveguide structure with a plurality of sections including electrically biasing one or more of the sections with a bias voltage to achieve a predetermined level of chirp, modulation depth, or insertion loss. Preferably, two or more sections are biased with a reverse bias voltage, a zero bias voltage, or forward bias voltage. | 06-11-2009 |
20090168151 | APPARATUS AND METHODS FOR OPTICAL AMPLIFICATION IN SEMICONDUCTORS - Methods and corresponding apparatus for optical amplification in semiconductors, particularly indirect band-gap semiconductors, and most particularly in silicon. A first aspect of the invention employs certain doping elements to provide inter-band-gap energy levels in combination with optical or current-injection pumping. The doping element, preferably a noble metal and most preferably Gold, is chosen to provide an energy level which enables an energy transition corresponding to a photon of wavelength equal to the signal wavelength to be amplified. The energy transition may be finely “adjusted” by use of standard doping techniques (such as n-type or p-type doping) to alter the conduction and valence band energy levels and thereby also the magnitude of the energy transition. A second aspect of the invention relates to the use of a non-homogeneous heat distribution which has been found to lead to optical amplification effects. | 07-02-2009 |
20090237780 | SEMICONDUCTOR OPTICAL AMPLIFIER, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR OPTICAL INTEGRATED DEVICE - A semiconductor optical amplifier is provided having polarization independent optical amplification characteristics and a flat gain spectrum over a wide wavelength region. In the semiconductor optical amplifier including a multi-quantum well active layer formed of well layers and barrier layers alternately laminated to each other on an InP substrate, the well layers and the barrier layers each have a tensile strain, and the tensile strain of each of the barrier layers is larger than the tensile strain of each of the well layers. | 09-24-2009 |
20090237781 | OPTICAL AMPLIFIER APPARATUS - An optical amplifier apparatus includes an optical amplifier including an amplification medium doped with an active substance, the amplification medium excited in order to amplify light; a semiconductor optical amplifier arranged after the optical amplifier; a driver for supplying a driving current with respect to the semiconductor optical amplifier in order that the semiconductor optical amplifier has an amplification characteristic with respect to an input light, the amplification characteristic including a gain non-saturated region and a gain saturated region; and an input-light level adjuster for adjusting an out put light of the optical amplifier to the input light level of the semiconductor optical amplifier, the input light level being set up between the gain non-saturated region and the gain saturated region. | 09-24-2009 |
20090284830 | Optical amplifying medium, method of manufacturing the optical amplifying medium, and optical device comprising the optical amplifying medium - An optical amplifying medium, a method of manufacturing the optical amplifying medium are provided, and an optical device comprising the optical amplifying medium. The optical amplifying medium includes a multi-layer structure in which a first material layer doped with an activator and a second material layer that comprises a sensitizer are stacked. | 11-19-2009 |
20090296199 | Laser amplifiers with high gain and small thermal aberrations - The present invention discloses a laser amplifier with high gain and low thermally induced optical aberrations on the amplified laser beam. The amplifier designs allow simple multipass configurations to optimally extract the gain and reduce thermally induced index of refraction aberrations, making it possible to obtain an amplified laser beam of high quality combined with very high overall gains comparable to those achievable with expensive regenerative amplifiers. The amplifier includes a thin active laser solid to create the population inversion and associated heat generation within the thin laser active solid possible for the desired gain value. The system includes a cooling device in thermal contact with the thin active laser solid to provide good heat transport and high reflectivity coatings at the wavelengths of the pump and laser wavelengths. The pump light sources are laser diodes tuned to the maximum absorption of the laser active material. The amplifier also includes an optical system to transport the pump light to the laser active solid in such a way as to further confine the absorption of light along the two orthogonal directions in the plane of the laser active solid in order to get high population inversion and consequently high gains possible. | 12-03-2009 |
20090296200 | OPTICAL AMPLIFIER USING PHOTOELECTRIC EFFECT OF SURFACE PLASMON RESONANCE PHOTONS AND ITS MANUFACTURING METHOD - In an optical amplifier including a metal layer having an incident/reflective surface adapted to receive incident light and output its reflective light, and a dielectric layer formed on an opposite surface of the metal layer opposing the incident/reflective surface, the incident light excites surface plasmon resonance light in the metal layer while the dielectric layer is excited, so that an extinct ion coefficient of the dielectric layer is made negative. | 12-03-2009 |
20100007944 | OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A manufacturing method for an optical semiconductor device, including disposing a semiconductor element that has a polarization dependent gain or polarization dependent loss between optical waveguide modes differing in the direction of polarization, positioning a lens at one end face side of the semiconductor element based on an optical coupling loss between the lens and the semiconductor element, and repositioning the lens based on the polarization dependent gain or the polarization dependent loss of the semiconductor element. | 01-14-2010 |
20100007945 | Optical Device Comprising a GaInP-Based Photonic Crystal not Exhibiting Two-Photon Absorption - The invention relates to an optical device operating within a wavelength range centred on a reference wavelength (λ | 01-14-2010 |
20100091358 | EXTRINSIC GAIN LASER AND OPTICAL AMPLIFICATION DEVICE - An optical amplifier on a silicon platform includes a first doped device layer and a second doped device layer. A gain medium is positioned between the first and second doped device layers. The gain medium comprises extrinsic gain materials so as to substantially confine in the gain medium a light signal and allow the optical amplifier to be electrically or optically pumped. | 04-15-2010 |
20100097690 | High-Temperature Interband Cascade Lasers - A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented. The gain medium can include any one or more of the following features: (1) the active quantum well region includes a thick and In-rich GaInSb hole well; (2) the hole injector includes two or more GaSb hole wells having thicknesses in a specified range; (3) the electron and hole injectors are separated by a thick AlSb barrier to suppress interband absorption; (4) a first electron barrier of the hole injector region separating the hole injector region from an adjacent active quantum well region has a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states to not more than 5%; (5) the thickness of the first InAs electron well in the electron injector, as well as the total thickness of the electron injector, is reduced; (6) the number of cascaded stages is reduced; (7) transition regions are inserted at the interfaces between the various regions of the gain medium so as to smooth out abrupt shifts of the conduction-band minimum; (8) thick separate confinement layers comprising Ga(InAlAs)Sb are disposed between the active gain region and the cladding to confine the optical mode and increase its overlap with the active stages; and (9) the doping profile of the cladding layers is optimized to minimize the overlap of the optical mode with the most heavily-doped portion of the InAs/AlSb SL cladding layers. An interband cascade laser, an interband cascade amplifier, or an external cavity laser employing a gain medium having these features can emit at a wavelength of about 2.5 μm to about 8 μm at high temperatures. | 04-22-2010 |
20100134877 | SEMICONDUCTOR OPTICAL AMPLIFIER WITH A REDUCED NOISE FIGURE - A semiconductor optical amplifier for amplifying an optical signal. The amplifier comprises an input for receiving the optical signal and an output for outputting an amplified version of the optical signal. A semiconductor active medium is provided for defining an amplification path extending between the input and the output for amplifying the optical signal as the optical signal propagates along the amplification path. A control means selectively controls the amplified spontaneous emission (ASE) of the semiconductor optical amplifier. The control means is co-operable with the active medium for selectively varying carrier density along the amplification path. | 06-03-2010 |
20100208335 | SEMICONDUCTOR OPTICAL AMPLIFIER DEVICE - An apparatus including a semiconductor optical amplifier configured to amplify an input optical signal, and a controller configured to supply preheat current to the semiconductor optical amplifier when the input optical signal is not input to the semiconductor optical amplifier. | 08-19-2010 |
20100214651 | REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER (RSOA), RSOA MODULE HAVING THE SAME, AND PASSIVE OPTICAL NETWORK USING THE SAME - A Reflective Semiconductor Optical Amplifier (RSOA) for compensating for light loss in an optical link, an RSOA module for improving polarization dependency using the RSOA, and a Passive Optical Network (PON) for increasing economical efficiency and practical use of a bandwidth using the RSOA are provided. The PON includes a central office comprising a plurality of optic sources transmitting a downstream signal and a plurality of first receivers receiving an upstream signal; at least one optical network terminal (ONT) including a second receiver receiving the downstream signal and an RSOA which receives the downstream signal, remodulates the downstream signal into the upstream signal, and transmits the upstream signal in loopback mode; and a remote node interfacing the central office with the ONT. The upstream signal and the downstream signal are transmitted between the remote node and the ONT via a single optical fiber. The remote node includes an optical power splitter at its port connected to the ONT. | 08-26-2010 |
20100245990 | SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL MODULE - A semiconductor optical amplifier includes a semiconductor substrate; an optical waveguide that includes an active layer formed on the semiconductor substrate; and a wavelength selective reflection film that is formed on an end face where signal light is incident on the optical waveguide the wavelength selective reflection film allows transmission of the signal light, and reflects light of any wavelength other than the signal light. | 09-30-2010 |
20100271690 | VERTICAL CAVITY SURFACE EMITTING LASER ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY ELEMENT, VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, LIGHT SOURCE DEVICE, AND OPTICAL MODULE - Included are: an active layer provided between an upper multilayer film reflecting mirror and a lower multilayer film reflecting mirror formed on a GaAs substrate and formed of a periodic structure of a low-refractive-index layer formed of Al | 10-28-2010 |
20100296159 | WAVELENGTH-VARIABLE LIGHT SOURCE - A wavelength-variable light source according to the present invention includes 2×2 3-dB directional coupler | 11-25-2010 |
20100321769 | OPTICAL SWITCH USING A MICHELSON INTERFEROMETER - An optical switch using a Michelson interferometer and differential onset of optical nonlinearity. Modulation of optical signals can occur at speeds that exceed that of electronic devices. | 12-23-2010 |
20110013270 | SEMICONDUCTOR OPTICAL AMPLIFIER - A semiconductor optical amplifier includes a semiconductor substrate; an active layer that includes a first region and a second region formed over the semiconductor substrate; and a reflection part that is formed along the second region and includes a first portion that reflects a first wavelength light and a second portion that reflects a second wavelength light with an optical gain lower than an optical gain of the first wavelength light; wherein, the first portion is formed closer to the first region side than the second portion. | 01-20-2011 |
20110026108 | SEMICONDUCTOR OPTICAL MODULATOR, AN OPTICAL AMPLIFIER AND AN INTEGRATED SEMICONDUCTOR LIGHT-EMITTING DEVICE - An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate. | 02-03-2011 |
20110032605 | PULSED OPTICAL SOURCE - The invention relates to pulsed optical sources formed of a source of seed optical radiation, a pulsed optical amplifier for pulsing the seed optical radiation, and an output optical port for outputting a pulsed optical signal produced by the pulsed optical amplifier. An optically isolating element such as an optical circulator is provided in the optical path between the optical seed source and the pulsed optical amplifier. | 02-10-2011 |
20110051228 | METHOD AND DEVICE FOR PROVIDING AND/OR CONTROLLING AN OPTICAL SIGNAL - A method provides and/or controls an optical signal, wherein a control signal and at least one data signal are optically processed into a combined signal of substantially constant optical power. The level of the at least one data signal is substantially maintained within the combined signal. In addition, an according device is provided. Suitable for compensation of Raman tilt in WDM communication systems. | 03-03-2011 |
20110116161 | OPTICAL AMPLIFIER, CONTROL CIRCUIT, AND OPTICAL AMPLIFIER CONTROL METHOD - An optical amplifier includes a semiconductor optical amplifier, a power monitor configured to monitor an optical power of out-of-signal-band noise output from the semiconductor optical amplifier, and a corrector configured to correct a relationship between a driving current for the semiconductor optical amplifier and a noise optical power based on the out-of-signal-band noise optical power monitored by the first power monitor. | 05-19-2011 |
20110122485 | ELECTRICALLY PUMPED LATERAL EMISSION ELECTROLUMINESCENT DEVICE INTEGRATED IN A PASSIVE WAVEGUIDE TO GENERATE LIGHT OR AMPLIFY A LIGHT SIGNAL AND FABRICATION PROCESS - An electrically pumped lateral emission electroluminescent device may include a slotted waveguide including a top silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith, and a bottom silicon layer having a thickness between 150 nm and 300 nm and a refraction index associated therewith. A core layer may include silicon oxide between the top and bottom layers and a thickness less than 70 nm. A core layer refraction index may be greater than each of the top and bottom layer refraction indices. A core layer portion may be in a direction of light propagation and may be doped with erbium, and may include silicon nanocrystals. A portion of each of the top and bottom layers may coincide with the core layer portion and may be doped so that the top and bottom layer portions are electrically conductive to define top and bottom plates. | 05-26-2011 |
20110134513 | OPTICAL DEVICE MODULE - Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device. | 06-09-2011 |
20110149385 | SYSTEM TO CONTROL AN OPTICAL SIGNAL - A system to control an optical signal may include a semiconductor laser diode. The system may also include an optical amplifier to receive an optical signal from the semiconductor laser diode. The optical amplifier may be configured to spectrally filter the optical signal. | 06-23-2011 |
20110157688 | System and Method for Optical Communication Using Polarization Filtering - An optical circuit is described which may include an SOA-MZI circuit providing an output signal; and a polarization filtering device (PFD) configured to receive the output signal of the SOA-MZI and to provide at least one signal at the output of the PFD. | 06-30-2011 |
20110164310 | OPTICAL AMPLIFICATION CONTROL APPARATUS, METHOD FOR CONTROLLING SEMICONDUCTOR OPTICAL AMPLIFIER, AND OPTICAL TRANSMISSION EQUIPMENT - An optical amplification control apparatus is formed from a semiconductor optical amplifier, a temperature adjustment unit adjusting the temperature of the semiconductor optical amplifier, and an optical gain control unit adjusting the temperature of the semiconductor optical amplifier by controlling the temperature adjustment unit, and varying an optical gain of the semiconductor optical amplifier. Thus, a pattern effect is suppressed even if the output light intensity (the intensity of amplified light) is increased. | 07-07-2011 |
20110176204 | PHOTO-PUMPED SEMICONDUCTOR OPTICAL AMPLIFIER - An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers. | 07-21-2011 |
20110181945 | OPTICAL SEMICONDUCTOR DEVICE - The present invention is an optical semiconductor device including a lower clad layer | 07-28-2011 |
20110199673 | INTEGRATED OPTICAL DEVICE AND OPTICAL PICKUP DEVICE USING THE SAME - An integrated optical device includes a plurality of semiconductor lasers which emit different wavelengths of laser light, a comparator circuit which compares voltages across terminals of the respective plurality of semiconductor lasers, and outputs a signal depending on the comparison result, a light-receiving element which outputs a photocurrent depending on the amounts of laser light emitted from the plurality of semiconductor lasers, and a current mirror circuit which switches between amplification and attenuation with respect to the photocurrent output from the light-receiving element based on the signal output from the comparator circuit, and outputs a monitor signal. | 08-18-2011 |
20110249322 | Nanowire-based opto-electronic device - Nanowire-based opto-electronic devices including nanowire lasers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires that can provide different polarizations. | 10-13-2011 |
20110273765 | SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL AMPLIFICATION APPARATUS - A semiconductor optical amplifier includes a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, a light absorption layer and an optical amplification layer formed on the lower cladding layer, and an upper cladding layer formed on the light absorption layer and the optical amplification layer. The band gap of a semiconductor material that forms the light absorption layer is wider than the band gap of a semiconductor material that forms the optical amplification layer. The difference between the band gap of the semiconductor material that forms the light absorption layer and the band gap of the semiconductor material that forms the optical amplification layer is 0.12 eV or more. | 11-10-2011 |
20110292501 | SCALABLE SEMICONDUCTOR WAVEGUIDE AMPLIFIER - One embodiment of the present method and apparatus encompasses an apparatus that may have: a predetermined length, the self-imaging semiconductor waveguide having first and second opposed sides; quantum wells disposed within the self-imaging semiconductor waveguide along the length of the self-imaging semiconductor waveguide, the quantum wells being formed of a quantum well gain material; microchannel cooler that extends substantially the width of the self-imaging semiconductor waveguide, the microchannel cooler located adjacent the first side of the self-imaging semiconductor waveguide; and a plurality of pump arrays arranged along the microchannel cooler opposed from the first side of the self-imaging semiconductor waveguide; wherein the quantum well gain material is photopumped through the microchannel cooler. | 12-01-2011 |
20120002271 | SEMICONDUCTOR OPTICAL AMPLIFIER - A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively W | 01-05-2012 |
20120019903 | OPTICAL AMPLIFICATION MODULE AND OPTICAL SWITCH DEVICE - An optical amplification module has a semiconductor optical amplifier, a package accommodating the semiconductor optical amplifier, and a first connector and a second connector holding respective collimator lenses and arranged in parallel on the package. A sum of bend radii of the first optical fiber and the second optical fiber is greater than a space between the first connector and the second connector. | 01-26-2012 |
20120033295 | PASSIVE OPTICAL NETWORKS - An optical network unit ( | 02-09-2012 |
20120038974 | Systems and Methods for Measuring Power Levels in an Optical Device - An apparatus for monitoring optical equipment in an optical circuit is disclosed in which the apparatus may include an optical device situated to receive an optical input signal and to reflect a portion of the energy of the received optical input signal, thereby providing a reflected input signal; a first photodiode located along a path of the reflected input signal, and operable to receive optical energy from the reflected optical input signal and from ambient optical power; a second photodiode located substantially outside the reflection path of the optical input signal; and means for calculating a magnitude of a power level of the optical input signal from values of outputs from the first and second photodiodes. | 02-16-2012 |
20120057221 | OPTICAL INTEGRATION SYSTEM AND METHOD - An optical integration circuit includes a semiconductor optical amplifier (SOA), a readout mechanism coupled to the SOA, and an optical filter coupled to an output of the SOA. The SOA has a decaying response function and an input for receiving an optical input signal having a first wavelength. The SOA is configured to output an optical signal representing a temporal integration of the optical input signal. The readout mechanism provides an optical readout signal having a second wavelength to the SOA for measuring a state of the SOA. The optical filter is configured to receive the signal representing the temporal integration of the optical input signal and block optical signals having the first wavelength. | 03-08-2012 |
20120075692 | MULTI-LAYERED HYBRID METAMATERIAL STRUCTURE - A metamaterial structure is provided, including a substrate and a plurality of resonators that are provided on different surfaces of the substrate or different layers of the substrate. The resonators have resonance characteristics different from each other, and the metamaterial structure has a permittivity, a permeability, and a refractive index respectively different from those of the substrate in a predetermined frequency bandwidth. | 03-29-2012 |
20120127564 | High-Temperature Interband Cascade Lasers - An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region. | 05-24-2012 |
20120134014 | LIGHT GENERATING DEVICE - Disclosed is a light generating device which comprises a first reflective semiconductor optical amplifier emitting a first light along a first direction, a second reflective semiconductor optical amplifier emitting the second light in a direction opposite to the first direction, an optical distributer reflecting a part of an incident light and to pass the remaining of the incident light, and an optical comb filter passing a wavelength component of a specific period. | 05-31-2012 |
20120176667 | Method and Apparatus for Amplifying and Dynamically Adjusting Optical Signal - A method for amplifying and dynamically adjusting an optical signal is provided in the present invention, which includes: a first optical tap splitting out a small part of the optical signal, which is converted into an electric signal via a first optical detector and is then output to a high speed gain control circuit, in proportion from an uplink burst optical signal, and outputting a remainder of the optical signal to an optical amplifier; the high speed gain control circuit dynamically adjusting the control signal loaded on the optical amplifier according to the input electric signal which varies with uplink burst slots; and the optical amplifier dynamically adjusting a gain value according to the loaded control signal to make peak powers of the output uplink optical signals in different burst slots equal, thus achieving output power equalization. | 07-12-2012 |
20120229889 | REGENERATIVE AMPLIFIER, LASER APPARATUS, AND EXTREME ULTRAVIOLET LIGHT GENERATION SYSTEM - A regenerative amplifier according to one aspect of this disclosure is used in combination with a laser device, and the regenerative amplifier may include: a pair of resonator mirrors constituting an optical resonator; a slab amplifier provided between the pair of the resonator mirrors for amplifying a laser beam with a predetermined wavelength outputted from the laser device; and an optical system disposed to configure a multipass optical path along which the laser beam is reciprocated inside the slab amplifier, the optical system transferring an optical image of the laser beam at a first position as an optical image of the laser beam at a second position. | 09-13-2012 |
20120229890 | Optical Devices and Method of Counting Optical Pulses - An optical device comprises an optical device stage, which comprises an optical input, an optical AND gate, an optical flip-flop and an optical output. The optical input is arranged to receive an optical input pulse at an input wavelength. The optical AND gate comprises a first input arranged to receive a part of said optical input pulse, a second input arranged to receive at least a part of a flip-flop optical output signal, and an output. The optical AND gate is arranged to generate an AND gate optical output pulse dependent on said flip-flop optical output signal. The optical flip-flop comprises a first input arranged to receive a further part of said optical input pulse, a second input arranged to receive a said AND gate optical output pulse, and an output. The optical flip-flop is arranged to generate said flip-flop output signal at a flip-flop output wavelength. At least a part of the flip-flop output signal is provided to said output. | 09-13-2012 |
20120257272 | OPTICAL AMPLIFICATION APPARATUS - An optical amplification apparatus includes a front-stage semiconductor optical amplifier which amplifies an input light and a rear-stage semiconductor optical amplifier which amplifies an amplified light outputted from the front-stage semiconductor optical amplifier. The front-stage semiconductor optical amplifier exercises auto level control of an output light by exercising variable control of driving current which flows according to applied voltage higher than light emitting threshold voltage of an internal optical amplification element. The rear-stage semiconductor optical amplifier performs gate switching of a transmitted light by exercising switching control of driving current. By doing so, distortion of a waveform is controlled and optical communication quality can be improved. | 10-11-2012 |
20120281274 | SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type. | 11-08-2012 |
20130016423 | HYBRID LASER SOURCE WITH RING-RESONATOR REFLECTORAANM Zheng; XuezheAACI San DiegoAAST CAAACO USAAGP Zheng; Xuezhe San Diego CA USAANM Krishnamoorthy; Ashok V.AACI San DiegoAAST CAAACO USAAGP Krishnamoorthy; Ashok V. San Diego CA US - A laser source includes a semiconductor optical amplifier (SOA) as a gain medium that receives and amplifies an optical signal characterized by at least a wavelength associated with a lasing mode of the laser source. This laser source includes a first optical waveguide and a second optical waveguide optically coupled to the SOA. Furthermore, a wavelength-selective reflector is optically coupled to the first optical waveguide and the second optical waveguide, where a closed loop defined by the SOA, the first optical waveguide, the wavelength-selective reflector and the second optical waveguide defines a cavity of the laser source. | 01-17-2013 |
20130033743 | Opto-Electronic Device - An optical amplifier has a low polarization dependent gain. The amplifier includes a gain medium including a plurality of adjoining semiconductor layers to provide optical gain wherein the adjoining semiconductor layers define one or more quantum wells for electrons and are operative to provide both direct and indirect electron-hole transitions in the gain medium. A first quantized electron energy level in the conduction band and a first quantized hole energy level in the valence band is located in a first layer. A further first quantized hole energy level in the valence band is located in an adjacent second layer. | 02-07-2013 |
20130038925 | OPTICAL AMPLIFYING DEVICE - An optical amplifying device includes an optical system including a first end and a second end, the optical system configured to receive signal light through the first end, to lead the received signal light to an optical amplifying medium, and to output the signal light amplified by the optical amplifying medium through the second end, the optical system including a first optical isolator and a second optical isolator which are arranged on respective sides of the optical amplifying medium, wherein with respect to a direction in which the signal light propagates, each of the first optical isolator and the second optical isolator is capable of allowing light propagating in the same direction to pass therethrough and blocking light propagating in the opposite direction, and the first optical isolator and the second optical isolator have different center isolation wavelengths for the light propagating in the opposite direction. | 02-14-2013 |
20130057949 | HIGH-POWER PULSED LIGHT GENERATOR - A high-power pulse light generator includes: a master oscillator generating oscillated pulse light in synchronization with a master clock signal; an optical amplifier amplifying the oscillated pulse light output from the master oscillator and outputting high-power pulsed light; a driving unit driving a pumping semiconductor laser in synchronization with the master clock signal; and a control unit controlling the driving unit so that the driving current to be supplied to the pumping semiconductor laser becomes lower than or equal to a set value at which the pumping semiconductor laser is not in a laser oscillation state when returning light from an irradiated body with the high-power pulsed light reaches the pumping semiconductor laser connected to the optical amplifier, the control unit determining a timing of the control in accordance with an optical path length between the irradiated body and the pumping semiconductor laser. | 03-07-2013 |
20130163073 | SOLID-STATE LASER AMPLIFIER, LASER LIGHT AMPLIFIER, SOLID-STATE LASER DEVICE, AND LASER DEVICE - A solid-state laser amplifier may include a first amplifying module including a first optical system having two focusing optical systems disposed so that the focal points of the two focusing optical systems essentially match at a first position, and a first solid-state laser element, disposed so that a surface into which laser light enters is tilted at essentially a Brewster's angle relative to an optical path of the laser light and a second amplifying module including a second optical system having two focusing optical systems disposed so that the focal points of the two focusing optical systems essentially match at a second position, and a second solid-state laser element, disposed so that a surface into which laser light that has passed through the first amplifying module enters is tilted at essentially a Brewster's angle relative to an optical path of the laser light. | 06-27-2013 |
20130194657 | OPTICAL AMPLIFIER AND MANUFACTURING METHOD OF OPTICAL AMPLIFIER - An optical amplifier includes multiple semiconductor optical amplifiers (SOAs) provided on a semiconductor substrate and having different wavelength bands to be amplified; multiple branching paths that branch an input optical signal and input the branched optical signals into the parallel SOAs, respectively; and multiple combining paths that combine and output the optical signals after amplification by the SOAs. | 08-01-2013 |
20130308178 | Co-modulation of DBR Laser and Integrated Optical Amplifier - In an embodiment, a laser chip includes a laser, an optical amplifier, a first electrode, and a second electrode. The laser includes an active region. The optical amplifier is integrated in the laser chip in front of and in optical communication with the laser. The first electrode is electrically coupled to the active region. The second electrode is electrically coupled to the optical amplifier. The first electrode and the second electrode are configured to be electrically coupled to a common direct modulation source. | 11-21-2013 |
20130321902 | LOW-LOSS FLEXIBLE META-MATERIAL AND METHOD OF FABRICATING THE SAME - Provided are a meta-material and a method of fabricating the same. the metal-material may include a substrate, a metal layer on the substrate, and an active gain medium layer on the metal layer. The active gain medium layer and the metal layer may be configured to define hole patterns that may be periodically arranged to have a space smaller than a wavelength of an ultraviolet light, such that the active gain medium layer and the metal layer exhibit a negative refractive index in a wavelength region of the ultraviolet light. | 12-05-2013 |
20140022628 | SEMICONDUCTOR OPTICAL AMPLIFIER DEVICE AND OPTICAL MATRIX SWITCH - The semiconductor optical amplifier device includes a plurality of active units. Each active unit includes an active stripe structure of an optical amplifying medium and a current circuit configured to inject current into the corresponding active stripe structure. Each active stripe structure extends from an input end to an output end. An optical splitter device is configured to split an incoming signal light and for distributing corresponding parts of the incoming signal light into the different input ends of the active stripe structures. The optical splitter device is configured to supply each active stripe structure with the same signals. | 01-23-2014 |
20140055845 | Resonator-Enhanced Optoelectronic Devices and Methods of Making Same - Optical resonators that are enhanced with photoluminescent phosphors and are designed and configured to output light at one or more wavelengths based on input/pump light, and systems and devices made with such resonators. In some embodiments, the resonators contain multiple optical resonator cavities in combination with one or more photoluminescent phosphor layers or other structures. In other embodiments, the resonators are designed to simultaneously resonate at the input/pump and output wavelengths. The photoluminescent phosphors can be any suitable photoluminescent material, including semiconductor and other materials in quantum-confining structures, such as quantum wells and quantum dots, among others. | 02-27-2014 |
20140078580 | OPTICAL AMPLIFIER DEVICE - An optical amplifier device comprising an input/output section that inputs incident light and outputs emission light; a polarized light splitting section that causes a polarized light component of the incident light input from the input/output section to branch, and outputs first polarization mode light having a first polarization and second polarization mode light having a second polarization different from the first polarization; a polarization converting section that receives the first polarization mode light, converts the first polarization to the second polarization, and outputs first polarization converted light; and an optical amplifying section that amplifies the first polarization converted light input to one end of a waveguide, outputs the resulting amplified first polarization converted light from another end of the waveguide, amplifies the second polarization mode light input to the other end of the waveguide, and outputs the resulting amplified second polarization mode light from the one end of the waveguide. | 03-20-2014 |
20140098412 | SYSTEMS AND METHODS FOR AMPLIFYING LIGHT - The invention relates to optical system including light sources that amplify light using a gain medium. Systems and method of the invention are provided for amplifying light while inhibiting reflections at a peak gain of the gain medium, thereby suppressing parasitic lasing. This allows a system to use a broad range of wavelengths without parasitic lasing, thereby increasing the useable range of a tunable optical filter. In this manner, light at wavelengths not at a peak gain can be used effectively, and the gain medium of an optical amplifier does not limit use of a system to a narrow range of wavelengths associated with a peak gain of the gain medium. A single optical system according to the invention can thus be used for applications that require a broad range of wavelengths. | 04-10-2014 |
20140268312 | HYBRID OPTICAL SOURCE WITH SEMICONDUCTOR REFLECTOR - A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source includes an edge-coupled optical amplifier (such as a III-V semiconductor optical amplifier) aligned to a semiconductor reflector (such as an etched silicon mirror). The semiconductor reflector efficiently couples (i.e., with low optical loss) light out of the optical amplifier in a direction approximately perpendicular to a plane of the optical amplifier. A corresponding optical coupler (such as a diffraction grating or a mirror) fabricated on a silicon-on-insulator chip efficiently couples the light into a sub-micron silicon-on-insulator optical waveguide. The silicon-on-insulator optical waveguide couples the light to additional photonic elements (including a reflector) to complete the hybrid optical source. | 09-18-2014 |
20140300953 | Tunable Multi-Mode Laser - A widely tunable multi-mode semiconductor laser containing only two electrically active sections, being an optical gain section and a tunable distributed Bragg reflector section adapted to reflect at a plurality of wavelengths, wherein the gain section is bounded by the tunable distributed Bragg reflector section and a broadband facet reflector, and wherein the tunable distributed Bragg reflector section comprises a plurality of discrete segments capable of being selectively tuned, wherein the reflection spectra of one or more segments of the tunable distributed Bragg reflector section can be tuned lower in wavelength to reflect with the reflection spectrum of a further segment of the tunable distributed Bragg reflector section to provide a wavelength range of enhanced reflectivity. An optical transmitter comprising a light source that is such a widely tunable multi-mode semiconductor laser. | 10-09-2014 |
20140362432 | METHOD AND SYSTEM FOR HOMOGENIZING DIODE LASER PUMP ARRAYS - An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%. | 12-11-2014 |
20140362433 | SEMICONDUCTOR OPTICAL AMPLIFIER - One or more input access waveguides are connected to an optical splitter arranged to divide the light into two or more output waveguides, at least two of the splitter's output access waveguides are used to form a Mach-Zehnder interferometer modulator where at least one arm of the interferometer has a phase modulator electrode and a single electrical contact is arranged to apply a common voltage simultaneously to a selected portion in each arm, or selected portions in each arm of the waveguides that are disposed after the splitter but preceding the phase modulation electrodes, or alternatively the single electrical contact is arranged to apply the voltage to a selected portion of the input access waveguide connected to the splitter and in one or more selected portions of one or both of the arms after the splitter but preceding the phase modulation electrodes to provide gain or reduced optical loss. | 12-11-2014 |
20150372453 | OPTICAL FUNCTIONAL INTEGRATED UNIT AND METHOD FOR MANUFACTURING THEREOF - It is provided that an optical functional integrated unit and a method for manufacturing thereof in which a positive optical device and a passive optical device including a silicon waveguide can be readily integrated. An optical functional integrated unit includes a semiconductor optical amplifier, a photonics device, a mounting board, pedestals and. The pedestals and are provided on the mounting board. The semiconductor optical amplifier is mounted on the pedestal and outputs a light from an active layer. The photonics device is mounted on the pedestal. The photonics device includes silicon waveguide to which the light output from the semiconductor optical amplifier is guided. | 12-24-2015 |
20160094017 | TUNABLE LASER SOURCE - A tunable transmission optical filter is optically coupled between a laser section and semiconductor optical amplifier (SOA) section of a tunable laser device. The optical filter may be tuned to provide a high transmission near the lasing peak while suppressing a significant portion of back-propagating amplified spontaneous emission (ASE) of the SOA section. Without the optical filter, the laser output spectrum may develop side lobes of higher intensity after the ASE is amplified and reflected in the forward direction by the laser gain and mirror sections. While lessening the side lobes, the optical filter simultaneously transmits the laser peak for amplification by the SOA section. | 03-31-2016 |
20160141838 | OPTOELECTRONIC DEVICES, METHODS OF FABRICATION THEREOF AND MATERIALS THEREFOR - An optoelectronic signal translating device having a region containing rare earth or transition metal ions for generation of radiation of a predetermined wavelength. Said region includes an organic complex comprising a ligand adapted to enhance the emission of radiation and a chromophore separately co-operable with a radiation source of wavelength not greater than that of said predetermined desired radiation. Said chromophore can be excited to cross-couple with the upper permitted energy state of said rare earth or transition metal ions, thereby generating said predetermined desired radiation by subsequent decay of said ions to the permitted lower energy state. | 05-19-2016 |