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Focus or magnification control

Subclass of:

355 - Photocopying

355018000 - PROJECTION PRINTING AND COPYING CAMERAS

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
355063000 Vertical optical path 11
355056000 Automatic or semiautomatic focusing when varying image size 9
355061000 Including indicator or scale 3
20100128238Frequency Selective Iterative Learning Control System and Method for Controlling Errors in Stage Movement - Methods and control systems are provided for controlling stage position errors based, in some embodiments, on a selection of frequency components in a stage position error signal. An error frequency representation of a position error signal may be generated in the frequency domain and filtered by selecting one or more desired frequency components. The filtered error frequency representation can then be manipulated according to a control law and transformed back into the time domain to generate a current control signal. The current control signal can then be used to adjust the position of the stage to reduce positioning error.05-27-2010
20090316127SUBSTRATE, AND METHOD AND APPARATUS FOR PRODUCING THE SAME - A method, for producing a substrate, includes: forming an alignment mark on a first surface of the substrate; detecting a position of the alignment mark; forming a mark by scanning and focusing a laser beam on a position, on a second surface of the substrate, corresponding to the position of the alignment mark, the laser beam having a wavelength so as to pass through the substrate.12-24-2009
20110013165POSITION CALIBRATION OF ALIGNMENT HEADS IN A MULTI-HEAD ALIGNMENT SYSTEM - A calibration method for the position calibration of secondary alignment heads with a primary alignment head in a multi-head alignment system, such as that used for the measurement of markers on the surface of a wafer, as carried out during a lithographic process in the formation of circuits in or on the wafer includes making a plurality of offset measurements for at least one of the secondary alignment heads, so that the offset of the secondary alignment heads with respect to the primary alignment head can be measured, and used as correction data in subsequent wafer measurement calculations.01-20-2011
355060000 Reflector between original and photo-sensitive paper 2
20090091726Optical Focus Sensor, an Inspection Apparatus and a Lithographic Apparatus - To detect whether a substrate is in a focal plane of an inspection apparatus, an optical focus sensor is arranged to receive a radiation beam via an objective lens. The optical focus sensor includes a splitter configured to split the radiation beam into a first sub-beam and a second sub-beam. With an aperture and a detector in the light path of each of the sub-beams it is possible to detect whether the substrate is in focus by comparing the amount of radiation received by each of the detectors.04-09-2009
20130027679FOCUS DETECTION APPARATUS FOR PROJECTION LITHOGRAPHY SYSTEM - Disclosed is a focus detection apparatus for a projection lithography system. The apparatus comprises: a laser; a focus optical unit configured to focusing the emitted laser beam; a force detection unit configured to reflect the focused laser beam at the backside; a position detection unit configured to detect variations in position of a light spot formed by the reflected laser beam, and output a strength signal indicating the strength of the interaction force between the force detection unit and the object; a differential amplifier configured to output a Z-direction differential signal based on the strength signal and a reference signal; a Z-direction feedback control unit configured to perform feedback control; and a scan signal generator configured to output a signal for controlling the movement of the stage in the XY plane. The focus detection apparatus has high precision, efficiency and process applicability.01-31-2013
Entries
DocumentTitleDate
20080291416OPTICAL MEMBER-HOLDING APPARATUS, METHOD FOR ADJUSTING POSITION OF OPTICAL MEMBER, AND EXPOSURE APPARATUS - There is provided is an optical member-holding apparatus which can hold a plurality of optical members of two different optical systems, even when the optical members exist in a common barrel in a mixed manner, such that the relative positions between the optical members can be easily adjusted; and which holds a mirror in a projection optical system and a mirror in an illumination optical system and includes a barrel unit, an inner ring holding the mirror, a holding member holding the mirror, a support plate attached to the barrel unit, and a holding-supporting mechanism attached to the support plate and adjusting the relative position of the mirror to the mirror.11-27-2008
20080297752FOCUS SENSITIVE LITHOGRAPHIC APPARATUS, SYSTEMS, AND METHODS - A system includes an illuminator, a mask, and a measurement device. The illuminator includes a light source. The mask includes at least one focus determination pattern having a first pattern portion and an adjacent second pattern portion. The first pattern portion and the second pattern portion have substantially the same width but produce a phase difference in light transmitted through the pattern portions. The measurement device measures a first critical dimension and a second critical dimension of a feature produced on a target by the at least one focus determination pattern. The difference between the first critical dimension and the second critical dimension relates to an amount of defocus and is sensitive to the focus change. The system may also include a feedback control loop where a determination regarding an amount of defocus is used to focus the position of a wafer or a mask or both of them onto the target. Additional apparatus, systems, and methods are disclosed.12-04-2008
20090009742OPTICAL ELEMENT DRIVING APPARATUS, BARREL, EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - A permanent magnet fixed to a peripheral portion of a lens cell includes two magnets that are joined together so that the north poles face each other and the south poles are exposed. A first driving coil is arranged to face toward exits for lines of magnetic force from the joining surfaces of the north poles of the permanent magnet, and a second driving coil is arranged to face toward entrances for lines of magnetic force in the permanent magnet. The orientation of the lens is adjusted by adjusting the currents supplied to the first driving coil and second driving coil to drive the lens cell in an optical axis direction and horizontal direction in a state in which the lens cell is levitated relative to the cover.01-08-2009
20090027643COMPENSATION OF RETICLE FLATNESS ON FOCUS DEVIATION IN OPTICAL LITHOGRAPHY - A method for lithography patterning includes providing a mask for photolithography patterning; measuring a mask flatness of the mask; calculating focal deviation of imaging the mask to a substrate in a lithography apparatus; adjusting the lithography apparatus to have a compensated focal plane of the mask based on the focal deviation; and exposing the semiconductor substrate utilizing the mask and the lithography apparatus with adjusted focal plane.01-29-2009
20090040488MOVABLE BODY DRIVE METHOD AND MOVABLE BODY DRIVE SYSTEM, PATTERN FORMATION METHOD AND APPARATUS, EXPOSURE METHOD AND APPARATUS, AND DEVICE MANUFACTURING METHOD - Positional information of a stage within a movement plane is measured, using three encoders which include at least one each of an X encoder and a Y encoder. Based on position measurement values of the stage, the encoder used in position measurement is switched from an encoder (Enc02-12-2009
20090040489POSITION SENSOR - A position detecting apparatus for detecting position of an object disposed in a first space by receiving light from the object with a light receiving element disposed outside said first space, said position detecting apparatus includes an optical system for directing light from the object to the light receiving element, and a first optical element transmitting light from the object, disposed in a partitioning member for partitioning said first space and space outside said first space, wherein said first optical element is located on a position on or near a pupil plane or a plane conjugate to the pupil plane of said optical system.02-12-2009
20090073409EXPOSURE SYSTEM AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In an exposure system and semiconductor device manufacturing method relating to the present invention, an image of spatial image mark body through a reduction projection lens is projected onto a spatial image projection plate arranged on a wafer stage by irradiating the spatial image mark body arranged on a reticle stage with an exposure light. The spatial image mark body has a plurality of spatial image marks arranged in a same plane. At projection positions of images of each spatial image mark on the spatial image projection plate, spatial image openings are equipped with differing positions in an optical axis direction of the exposure light. A focus curve with a single exposure can be obtained, without moving the wafer stage in the optical axis direction, by respective measurements of optical intensities of images of each spatial image mark through each opening thereby enabling to calculate the best focus position.03-19-2009
20090115985POSITION DETECTOR, POSITION DETECTION METHOD, EXPOSURE APPARATUS, AND METHOD OF MANUFACTURING DEVICE - A position detector (05-07-2009
20090135389METHOD OF MEASURING FOCUS OF A LITHOGRAPHIC PROJECTION APPARATUS - A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset FO. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve. The method according to an embodiment of the invention may result in a focus-versus alignment shift sensitivity up to 50 times higher (typically dX,Y/dZ=20) than conventional approaches.05-28-2009
20090195765PROJECTION LENS UNIT WITH FOCUS AND LEVEL CONTROL, RELATED EXPOSURE APPARATUS AND METHOD - A projection lens unit, related exposure apparatus and control method are disclosed in which measurement light irradiates a semiconductor substrate after passing through lenses in the projection lens unit and reference light irradiates the semiconductor substrate without passing through the lenses in the projection lens unit are used to derive a control signal adapted to adjust the position of the semiconductor substrate under the projection lens unit.08-06-2009
20090231565OPTICAL SYSTEM AND METHOD OF USE - A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.09-17-2009
20090262320Method and Lithographic Apparatus for Acquiring Height Data Relating to a Substrate Surface - A method of positioning a target portion of a substrate with respect to a focal plane of a projection system uses a level sensor to perform height measurements of at least part of the substrate to generate height data. Specified and/or predetermined correction heights are used to compute corrected height data. The predetermined correction heights may be at least partially based on process stack data. The position of a substrate table is controlled using the correction heights which are partially based on the process stack data, in particular the process stack layer of the target area.10-22-2009
20090296059MEASUREMENT APPARATUS, MEASUREMENT METHOD, EXPOSURE APPARATUS, AND DEVICE FABRICATION METHOD - The present invention provides a measurement apparatus which measures a wavefront aberration of a measurement target optical system, the apparatus including a fringe scanning unit configured to perform fringe scanning by changing a phase difference between test light and reference light, a determination unit configured to determine a nonlinear error representing a nonlinear change in feature amount, which is derived from an interference pattern between the test light and the reference light, with respect to predetermined control data by performing fringe scanning by the fringe scanning unit in accordance with the control data in a plurality of phase states, and a correction unit configured to correct, based on the nonlinear error determined by the determination unit, a wavefront aberration of the measurement target optical system calculated from the interference pattern between the test light and the reference light.12-03-2009
20090303453MEASUREMENT METHOD AND APPARATUS, EXPOSURE APPARATUS - A measurement method for measuring a wavefront aberration of a target optical system using a measurement apparatus that measures the wavefront aberration of the target optical system by detecting an interference pattern includes the steps of measuring as a system parameter a shift from a design value of a value that defines a structure of the measurement apparatus and the target optical system, and measuring the wavefront aberration of the target optical system using the system parameter.12-10-2009
20100002213PHOTOLITHOGRAPHY SYSTEM USING AN OPTICAL MICROSCOPE - A photolithography system using an optical microscope is provided that can form various types of selective patterns at a low cost in small-scale research using unit-size silicon substrates which is not targeted for mass production, without requiring an expensive photomask.01-07-2010
20100002214IN-DIE FOCUS MONITORING WITH BINARY MASK - Focus monitoring for a photolithographic applications is provided by illuminating a photoresist layer with a light beam transmitted through a first binary mask to define a circuit pattern on an underlying substrate and then illuminating the photoresist layer with an unbalanced off-axis light beam transmitted through a second binary mask. The second mask contains a shifting feature configuration in one portion, while another portion blocks light transmission to the chip design area of the photoresist. After development of the photoresist layer, the pattern formed by illumination of the second mask can be compared with a predefined reference feature on the photoresist layer to determine whether a shift, if any, is within acceptable focus limits.01-07-2010
20100002215IMAGING OPTICAL SYSTEM, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - An optical system is used in a detection unit of an exposure apparatus that projects an original pattern by exposure onto a substrate via a projection optical system. The detection unit detects a position of the substrate in the optical axis direction of the projection optical system. The optical system includes a first imaging optical system configured to form an object image in the measurement region of the substrate by oblique light incidence, and a second imaging optical system configured to focus the object image onto a light receiving unit. The following relationship is satisfied:01-07-2010
20100014062LENS ARRAY PLATE OF ERECTING UNIT MAGNIFICATION SYSTEM, IMAGE READING APPARATUS AND IMAGE WRITING APPARATUS USING THE LENS ARRAY PLATE, AS WELL AS METHOD FOR MANUFACTURING THE LENS ARRAY PLATE - A lens array plate of long-size or large area is provided reducing deterioration of optical performance. A lengthy lens array plate (01-21-2010
20100026976Actuator System Using Multiple Piezoelectric Actuators - A positioning system adjusts a position of an optical element within an optical device, such as a variable-zoom lens system. A frame supports the optical element, and an elongated surface of each of one or more elongated support structures supports the frame. The frame also supports one or more piezoelectric actuators that, respectively, engage one of the elongated support structures. A controller supplies a control signal to activate each of the one or more actuator modules. Upon activation, a piezoelectric element of each of the activated actuator modules applies a combination of a first force and a second force to an elongated surface of the respective elongated support structures to position the frame along the elongated surface. The combination of forces applied by the piezoelectric element advances the piezoelectric actuator module along the elongated support structure.02-04-2010
20100073656ALIGNMENT UNIT AND EXPOSURE APPARATUS - An alignment unit includes a measurement unit configured to measure a coordinate of a center position of an alignment mark transferred to each layer that is located under an uppermost layer of a substrate, and a controller configured to determine a target coordinate of the center position of the alignment mark transferred to the uppermost layer of the substrate based on a result of a weighted average that is made by weighting the coordinate of the center position of the alignment mark of each layer of the substrate measured by the measurement unit using as a weight a function inversely proportional to a minimum critical dimension of the pattern of an original formed on each layer of the substrate.03-25-2010
20100110401PHOTOLITHOGRAPHY SYSTEMS AND ASSOCIATED METHODS OF FOCUS CORRECTION - Several embodiments of photolithography systems and associated methods of focus correction are disclosed herein. In one embodiment, a method for characterizing focus errors in a photolithography system includes placing a microelectronic substrate onto a substrate support of the photolithography system. The microelectronic substrate is divided into a plurality of fields individually partitioned into a plurality of regions. The method also includes developing a raw focus error map that has a focus error corresponding to the individual regions of the plurality of fields and deriving at least one of an inter-field focus error map and an intra-field focus error map based on the raw focus error map. The inter-field focus error map has an inter-field focus error corresponding to the individual fields, and the intra-field focus error map has an intra-field focus error corresponding to the individual regions.05-06-2010
20100110402FOCUS CORRECTION IN LITHOGRAPHY TOOLS VIA LENS ABERRATION CONTROL - Aberration control capabilities of sophisticated lithography tools may be exploited in order to locally adapt the focal surface of the optical system. That is, higher order correction terms may be incorporated in the design of the local surface in addition to the conventionally used first order corrections, thereby enhancing uniformity of the lithography process and thus of corresponding microstructure devices.05-06-2010
20100110403MEASUREMENT APPARATUS, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - A measurement apparatus for measuring wavefront aberration of an optical system to be measured comprises a pinhole mask having a pinhole, an illumination optical system configured to illuminate the pinhole mask, a test pattern disposed between the pinhole mask and the optical system to be measured, a detector configured to detect an image formed on an image plane of the optical system to be measured by light having passed through the pinhole, the test pattern, and the optical system to be measured, and an optical member which is disposed or inserted in the illumination optical system, and configured to control an illuminance distribution in a pupil region of the optical system to be measured so that a peripheral portion in the pupil region includes a portion having an illuminance higher than an illuminance in a central portion in the pupil region.05-06-2010
20100110404OPTICAL ELEMENT SUPPORTING DEVICE, EXPOSURE APPARATUS USING SAME, AND DEVICE MANUFACTURING METHOD - The optical element supporting device of the present invention includes a first supporting member that supports the optical element, a second supporting member that supports the first supporting member at a plurality of locations, a plate spring fastened to the first supporting member and having a plate thickness extending in the optical axis direction of the optical element, and a force supplying unit, which is provided on the first supporting member, configured to provide a force in the optical axis direction applied to the plate spring at a location different from the plurality of locations, wherein the force supplying unit elastically deforms the first supporting member by receiving the reactive force generated by the force applied to the plate spring to thereby adjust the position of the optical element.05-06-2010
20100123887METHOD FOR A LITHOGRAPHIC APPARATUS - A method is described that includes illuminating a patterning device pattern with a radiation beam having a symmetric illumination mode, the patterning device pattern comprising a first pattern feature that substantially diffracts radiation of the radiation beam, and a second pattern feature that does not substantially diffract radiation of the radiation beam, introducing an asymmetry, relative to an optical axis, in the substantially diffracted radiation using a phase modulation element, illuminating a radiation beam receiving element with radiation emanating from the phase modulation element to form a receiving element pattern that is related to the patterning device pattern, the receiving element pattern having first and second receiving element pattern features related to the first and second pattern features respectively, and determining information at least indicative of a focal property from positional information regarding the relative positions of the first and second receiving element pattern features.05-20-2010
20100123888EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DEVICE - An apparatus, which scans an original and a substrate relative to light slit-shaped on the original and on the substrate, comprises an adjusting device configured to adjust a distribution of a width of the light slit-shaped, the width being a width in a scanning direction, the distribution being a distribution in a perpendicular direction perpendicular to the scanning direction, and a controller. The controller is configured to obtain information representing a relationship between a position on the substrate and a target dose, calculate a distribution of the target dose in the perpendicular direction with respect to each of the shot regions based on the relationship represented by the obtained information, and control the adjusting device so as to achieve the calculated distribution of the target dose with respect to each of the shot regions.05-20-2010
20100128237DRIVING APPARATUS, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - A driving apparatus of the present invention is a driving apparatus which adjusts a position of a member to be driven. The driving apparatus comprises a driving member connected with the member to be driven and made of an elastic member, a female screw provided so as to penetrate the driving member, and a taper-shaped male screw configured to be screwed into the female screw. The driving member is provided with a cutting portion which penetrates in an axis direction of the female screw so that an inner circumference of the female screw is discontinuous, and the driving member is configured to move in an axis direction of the male screw in a state where the male screw is screwed into the female screw to displace the member to be driven in a direction orthogonal to the axis direction of the male screw.05-27-2010
20100134774CALIBRATION METHODS AND DEVICES USEFUL IN SEMICONDUCTOR PHOTOLITHOGRAPHY - Several embodiments of photolithography devices and associated methods of focal calibration are disclosed herein. In one embodiment, a method for determining a focus shift in a photolithography system include placing a microelectronic substrate on a substrate support of the photolithography system and producing first and second refraction patterns on the photoresist layer corresponding to first and second grating patterns, respectively, of a single reticle by illuminating the first and second grating patterns with an asymmetric monopole source perpendicular to the first and second grating patterns. The method further includes measuring an image shift between the first and second refraction patterns on the photoresist layer and determining a defocus shift of the illumination source based on the image shift.06-03-2010
20100149503METHOD OF STRUCTURING A PHOTOSENSITIVE MATERIAL - A method of structuring a photosensitive material is disclosed. The method includes illuminating a first object structure and projecting a pattern of the first object structure onto a photosensitive material such that the projected pattern of the first object structure is focussed at a first focus position with respect to the photosensitive material. The method also includes illuminating a second object structure and projecting a pattern of the second object structure onto the photosensitive material such that the projected pattern of the second object structure is focussed at a second focus position with respect to the photosensitive material. The respective patterns are projected in the same projection direction.06-17-2010
20100177290Optical characteristic measuring method, optical characteristic adjusting method, exposure apparatus, exposing method, and exposure apparatus manufacturing method - There is provided an optical characteristic measuring method for measuring an optical characteristic of an optical system which forms, on a second plane, an image of an object arranged on a first plane, the optical characteristic measuring method including: arranging at least one phase pattern on the first plane; illuminating the arranged phase pattern, with a light having a predetermined wavelength; extracting a partial image of a pattern image formed via the phase pattern and the optical system; and detecting information about the light in relation to the extracted partial image.07-15-2010
20100182579LASER DEVICE - A laser device includes a seed laser, an amplifier, a detector, and an optical element arranged to direct radiation emitted by the seed laser towards a plasma generation site. The optical element is arranged to direct towards the detector amplified spontaneous emission radiation which has been emitted by the seed laser and has been reflected from a droplet of fuel material. The detector is arranged to trigger generation of a laser radiation pulse by the seed laser when the reflected amplified spontaneous emission radiation is detected.07-22-2010
20100195071Image Sensor, Method for Image Detection and Computer Program Product - The invention relates to an image for detection of an aerial pattern comprising spatial differences in radiation intensity in a cross section of a beam of radiation in a lithographic apparatus for exposing a substrate. The image sensor comprises a lens (08-05-2010
20100201962PROJECTION EXPOSURE METHOD, SYSTEM AND OBJECTIVE - A projection exposure method is disclosed which includes exposing an exposure area of a radiation-sensitive substrate, arranged in an image surface of a projection objective, with at least one image of a pattern of a mask arranged in an object surface of the projection objective in a scanning operation. The scanning operation includes moving the mask relative to an effective object field of the projection objective and simultaneously moving the substrate relative to an effective image field of the projection objective in respective scanning directions. The projection exposure method also includes changing imaging properties of the projection objective actively during the scanning operation according to a given time profile to change dynamically at least one aberration of the projection objective between a beginning and an end of the scanning operation. Changing at least one imaging property of the projection objective includes changing optical properties of a mirror arranged in the projection beam path optically close to a field surface by changing a surface profile of the reflective surface of the mirror in an optically used area.08-12-2010
20100225889PROJECTION OPTICAL SYSTEM, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - A projection optical system is configured to project an image of an object plane onto an image plane, and includes a first optical element having an aspheric shape that is rotationally asymmetric with respect to an optical axis, a moving unit configured to move the first optical element in a direction perpendicular to the optical axis, and a second optical element fixed on the optical axis, and configured to reduce an optical path length difference caused by an aspheric surface of the first optical element, the second optical element having no aspheric shape complement to the aspheric shape of the first optical element.09-09-2010
20100245793LIGHT-EMITTING ELEMENT, EXPOSURE HEAD AND IMAGE-FORMING APPARATUS - A light-emitting element includes a cathode, an anode, a luminescent layer disposed between the cathode and the anode, a first electron transport layer disposed between the luminescent layer and the cathode, and a second electron transport layer in contact with the luminescent layer and the first electron transport layer between the luminescent layer and the first electron transport layer. The luminescent layer contains a red luminescent material emitting red light. The first electron transport layer contains a first electron transport material. The second electron transport layer contains a second electron transport material different from the first electron transport material.09-30-2010
20100259738Lithographic systems and methods with extended depth of focus - An optical lithography system that has extended depth of focus exposes a photoresist coating on a wafer, and includes an illumination sub-system, a reticle, and an imaging lens that has a pupil plane function to form an aerial image of the reticle proximate to the photoresist. The pupil plane function provides the extended depth of focus such that the system may be manufactured or used with relaxed tolerance, reduced cost and/or increased throughput. The system may be used to form precise vias within integrated circuits even in the presence of misfocus or misalignment.10-14-2010
20100271608SYSTEM AND METHOD FOR IMAGING APPARATUS CALIBRATION - A system is disclosed including an image sensor positioned at a first specified angle relative to a projected image plane. The system includes a projector that projects a test pattern onto the projected image plane. A controller is structured to iteratively adjust the projector focus until an image focus index is maximized, where the image focus index is a function of an amplitude of at least one harmonic frequency of a scan of the test pattern. The controller is further structured to determine a skew indicator value and adjust a projector skew adjustment. The controller is further structured to compare a current zoom level to a target zoom level and adjust a projector zoom. The projected image plane is a manufacturing surface, where the projected image is utilized in a manufacturing process.10-28-2010
20100315611EXPOSURE METHOD, EXPOSURE APPARATUS, PHOTOMASK AND METHOD FOR MANUFACTURING PHOTOMASK - There is disclosed an exposure method is a method of projecting patterns (M12-16-2010
20100321657LITHOGRAPHIC PROJECTION APPARATUS AND METHOD OF COMPENSATING PERTURBATION FACTORS - A lithographic projection apparatus including a support structure configured to support a patterning device, the patterning device configured to impart a beam of radiation with a pattern in its cross-section; a substrate holder configured to hold a substrate; a projection system configured to expose the patterned beam of radiation on a target portion of the substrate; and a system configured to compensate one or more perturbation factors by providing an additional beam of radiation to be exposed on the target portion of the substrate, the additional beam of radiation being imparted in its cross-section with an additional pattern which is based on the pattern of the patterning device and on lithographic projection apparatus property data, the lithographic projection apparatus property data characterizing a level and nature of one or more systematic perturbation factors of different lithographic apparatus.12-23-2010
20100321658EXPOSURE HEAD AND IMAGE FORMING APPARATUS - An image forming apparatus includes an image carrier; and an exposure head including a light emitting element that emits a light having a first wavelength and a light having a second wavelength, and an optical system that focuses the light having the first wavelength at a first imaging position and focuses the light having the second wavelength at a second imaging position that is different from the first imaging position with respect to the first direction, the optical system having an optical axis extending in the first direction, wherein a surface of the image carrier is located between the first imaging position and the second imaging position.12-23-2010
20110026001LITHOGRAPHIC APPARATUS AND MONITORING METHOD - A lithographic apparatus including a radiation beam monitoring apparatus, the radiation beam monitoring apparatus including an optical element configured to generate a diffraction pattern, and an imaging detector located after the optical element and not in a focal plane of the optical element such that the imaging detector is capable of detecting a mixture of spatial coherence and divergence of the radiation beam.02-03-2011
20110043778Lithographic Apparatus and Device Manufacturing Method Utilizing Data Filtering - An apparatus and method are used to form patterns on a substrate. The apparatus comprises a projection system, a patterning device, a low-pass filter, and a data manipulation device. The projection system projects a beam of radiation onto the substrate as an array of sub-beams. The patterning device modulates the sub-beams to substantially produce a requested dose pattern on the substrate. The low-pass filter operates on pattern data derived from the requested dose pattern in order to form a frequency-clipped target dose pattern that comprises only spatial frequency components below a selected threshold frequency. The data manipulation device produces a control signal comprising spot exposure intensities to be produced by the patterning device, based on a direct algebraic least-squares fit of the spot exposure intensities to the frequency-clipped target dose pattern. In various examples, filters can also be used.02-24-2011
20110069291PHYSICAL SENSOR FOR AUTOFOCUS SYSTEM - Methods and apparatus for compensating for forces applied by a system which measures a height of a photoresist-coated surface of a wafer are disclosed. According to one aspect, a method for measuring a height associated with a wafer includes utilizing a measurement of an air flow through an air gauge or air bearing to estimate the height, determining a first magnitude of a bearing load exerted on the wafer from the air flow measurement, and compensating for the bearing load. The bearing load is exerted by an arrangement configured to determine the height associated with the wafer a first direction. Compensating for the bearing load includes applying an opposing force to the wafer that includes at least a vacuum preload force. The vacuum preload force is applied in a second direction that is opposite from the first direction. The opposing force is calculated to have a second magnitude that is approximately equal to the first magnitude.03-24-2011
20110096312EXPOSURE APPARATUS AND DEVICE FABRICATING METHOD - An exposure apparatus includes: a first moving body, which comprises a guide member that extends in a first direction, that moves in a second direction, which is substantially orthogonal to the first direction; two second moving bodies, which are provided such that they are capable of moving in the first direction along the guide members, that move in the second direction together with the guide member by the movement of the first moving body; and a holding member, which is detachably supported by the two second moving bodies and is capable of holding the object and moving with respect to the two second moving bodies. The second moving bodies include a first drive part and a second drive part that are independently controllable.04-28-2011
20110109889METHOD FOR POSITIONING A TARGET PORTION OF A SUBSTRATE WITH RESPECT TO A FOCAL PLANE OF A PROJECTION SYSTEM - A method is provided for positioning at least one target portion of a substrate with respect to a focal plane of a projection system. The method comprises performing height measurements of at least part of the substrate to generate height data, using predetermined correction heights to compute corrected height data for the height data. The method further comprises positioning the target portion of the substrate with respect to the focal plane of the projection system at least partially based on the corrected height data.05-12-2011
20110122383MAGNIFICATION CONTROL FOR LITHOGRAPHIC IMAGING SYSTEM - In a lithographic projection system, a corrective optic in the form of one or more deformable plates is mounted within telecentric image or object space for making one-dimensional or two-dimensional adjustments to magnification. The deformable plate, which can be initially bent under the influence of a preload, contributes weak magnification power that influences the magnification of the projection system by changing the effective focal length in object or image space. An actuator adjusts the amount of curvature through which the deformable plate is bent for regulating the amount of magnification imparted by the deformable plate.05-26-2011
20110157569Maskless exposure apparatus and control method thereof - Example embodiments are directed to a maskless exposure apparatus that generates and/or corrects exposure data using at least one information of intensity information, central position information, focus information, and/or shape information of a plurality of beams acquired using a measurement optical system, and a control method thereof. The maskless exposure apparatus includes the measurement optical system including a photo sensor and an image sensor, and a control unit configured to generate and/or correct the exposure data using the information acquired by the measurement optical system.06-30-2011
20110164231OPTICAL NANOLITHOGRAPHY SYSTEM AND METHOD USING A TILTING TRANSPARENT MEDIUM - An optical nanolithography system and a method for optical nanolithography using a tilting transparent medium are disclosed. Initially, a pattern is exposed on a substrate at a first location by sending electromagnetic energy through the tilting transparent medium at a first angle. Then, the angle of the tilting transparent medium is changed to a second angle that is different from the first angle. Next, the pattern is exposed on the substrate at a second location by sending electromagnetic energy through the tilting transparent medium at the second angle. The second location is different from and partially overlaps with the first location. Then, the substrate is developed so that overlapping regions of the substrate exposed by the pattern at the first location and at the second location are developed differently from non-overlapping regions of the substrate exposed by the pattern only at the first location or at the second location.07-07-2011
20110181854FOCUS COMPENSATION FOR OPTICAL ELEMENTS AND APPLICATIONS THEREOF - Optical imaging apparatus are provided having the desired focal properties, which can be manufactured and/or assembled at the wafer level.07-28-2011
20110181855PROJECTION EXPOSURE APPARATUS WITH OPTIMIZED ADJUSTMENT POSSIBILITY - A projection apparatus for microlithography for imaging an object field includes an objective, one or a plurality of manipulators for manipulating one or a plurality of optical elements of the objective, a control unit for regulating or controlling the one or the plurality of manipulators, a determining device for determining at least one or a plurality of image aberrations of the objective, a memory comprising upper bounds for one or a plurality of specifications of the objective, including upper bounds for image aberrations and/or movements for the manipulators, wherein when determining an overshooting of one of the upper bounds by one of the image aberrations and/or an overshooting of one of the upper bounds by one of the manipulator movements by regulation or control of at least one manipulator within at most 30000 ms, or 10000 ms, or 5000 ms, or 1000 ms, or 200 ms, or 20 ms, or 5 ms, or 1 ms, an undershooting of the upper bounds can be effected.07-28-2011
20110188016LITHOGRAPHIC APPARATUS, PROGRAMMABLE PATTERNING DEVICE AND LITHOGRAPHIC METHOD - In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.08-04-2011
20110194086WAFER EDGE EXPOSURE MODULE - A wafer edge exposure module connected to a semiconductor wafer track system. The wafer edge exposure module includes a wafer spin device, an optical system, a scanner interface module, and a controller. The wafer spin device supports a wafer for processing. The optical system directs exposure light on a respective edge portion of the wafer simultaneously to create a dummy track on the edge of the wafer. The scanner interface module sends and/or receives dummy edge exposure information from a scanner via a computer network. The controller receives the dummy edge exposure information from the scanner interface module and uses the exposure information to control the optical system.08-11-2011
20110199597IMAGING DEVICE IN A PROJECTION EXPOSURE FACILITY - An imaging device in a projection exposure machine for microlithography has at least one optical element and at least one manipulator, having a linear drive, for manipulating the position of the optical element. The linear drive has a driven subregion and a nondriven subregion, which are movable relative to one another in the direction of a movement axis. The subregions are interconnected at least temporarily via functional elements with an active axis and via functional elements with an active direction at least approximately parallel to the movement axis.08-18-2011
20110211181LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - In an immersion lithography apparatus or device manufacturing method, the position of focus of the projected image is changed during imaging to increase focus latitude. In an embodiment, the focus may be varied using the liquid supply system of the immersion lithographic apparatus.09-01-2011
20110211182LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, the optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, the pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into zeroth-order and first-order diffracted beams oppositely and asymmetrically inclined with respect to an optical axis. An area is identified where the first-order diffracted beam traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of the first-order diffracted beam in relation to the optical phase of the zeroth-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first order diffracted beam.09-01-2011
20110216295SEMICONDUCTOR LASER DRIVER AND IMAGE FORMING APPARATUS INCORPORATING SAME - A semiconductor laser driver includes a light detection circuit to detect a quantity of light as a detected light emission intensity and output the detected light emission intensity to the control circuit, and a control circuit to control a light emission intensity for the semiconductor laser based on the detected light emission intensity and on a predetermined light emission intensity setting value. The light detection circuit includes a photoelectric conversion element to convert the quantity of light emitted from the semiconductor laser into an electrical current and output the converted electrical current, a current magnification setting circuit to amplify the electrical current output from the photoelectric conversion element to a predetermined amplified current at one of multiple different predetermined magnifications, a detection resistor to convert the amplified current output from the current magnification setting circuit into a voltage and output the voltage as the detected light emission intensity.09-08-2011
20110222039LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus includes an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate. An optical element of the projection system is adjustable. The lithographic apparatus includes a controller to control the adjustable optical element. The controller is arranged to drive the optical element so as to at least partly compensate for a magnification resulting from a bending of the patterning device.09-15-2011
20110228243Mirror, Lithographic Apparatus and Device Manufacturing Method - Embodiments of the invention relate to a mirror (09-22-2011
20110249247Inspection Method and Apparatus, Lithographic Apparatus, Lithographic Processing Cell and Device Manufacturing Method - In order to determine whether an exposure apparatus is outputting the correct dose of radiation and a projection system of the exposure apparatus is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker may be measured by an inspection apparatus, such as, for example, a scatterometer to determine whether errors in focus, dose, and other related properties are present. The test pattern is arranged such that changes in focus and dose may be easily determined by measuring properties of a pattern that is exposed using the mask. The test pattern of the mask is arranged so that it gives rise to a marker pattern on the substrate surface. The marker pattern contains structures that have at least two measurable side wall angles. Asymmetry between side wall angles of a structure is related to focus (or defocus) of the exposure radiation from the exposure apparatus. The extent of defocus may thereby be determined by measuring an asymmetry in side wall angle of the printed marker pattern structures.10-13-2011
20110249248Apparatus for moving stereo imaging lens and method for digital stereo projection - An apparatus for moving a stereo imaging lens, includes: a baseplate (10-13-2011
20110255065METHOD AND APPARATUS FOR MODIFYING A SUBSTRATE SURFACE OF A PHOTOLITHOGRAPHIC MASK - Disclosed is a method of modifying of a surface of a substrate of a photolithographic mask for extreme ultraviolet radiation comprising the step of focusing femtosecond light pulses of a laser system onto the substrate so that a plurality of color centers is generated inside the substrate, wherein the color centers are distributed to cause a modification of the substrate surface.10-20-2011
20110261339SCATTEROMETER AND LITHOGRAPHIC APPARATUS - A scatterometer for measuring a property of a substrate includes a focus sensing arrangement including an arrangement (10-27-2011
20110267593METHOD AND APPARATUS FOR MAINTAINING DEPTH OF FOCUS - A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.11-03-2011
20110292363EXPOSURE APPARATUS AND METHODS - A light beam collimated by illumination optics (12-01-2011
20110292364IMAGING APPARATUS AND METHOD OF CONTROLLING THE APPARATUS - An imaging apparatus (12-01-2011
20120008122EXPOSURE APPARATUS AND DEVICE FABRICATION METHOD - The present invention provides an exposure apparatus including an obtaining unit configured to obtain data of a first imaging position at which light from a first pattern having, as a longitudinal direction thereof, a first direction perpendicular to an optical axis of a projection optical system forms an image via the projection optical system, and data of a second imaging position at which light from a second pattern having, as a longitudinal direction thereof, a second direction which is not parallel to the first direction and is perpendicular to the optical axis forms an image via the projection optical system, when the first pattern and the second pattern are respectively placed on an object plane of the projection optical system, and a control unit configured to control a stage so that a substrate is positioned at a target position of the substrate along the optical axis.01-12-2012
20120008123METHOD OF MEASURING AERIAL IMAGE OF EUV MASK - An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NA01-12-2012
20120013875Calibration Method and Inspection Apparatus - A method of calibrating an inspection apparatus. Obtaining a surface level measurements (LS) at respective level sensing locations LS(x,y). Determining focus settings (LP01-19-2012
20120044472Inspection Method for Lithography - A method is used to determine focus of a lithographic apparatus used in a lithographic process on a substrate. The lithographic process is used to form at least two periodic structures on the substrate. Each structure has at least one feature that has an asymmetry between opposing side wall angles that varies as a different function of the focus of the lithographic apparatus on the substrate. A spectrum produced by directing a beam of radiation onto the at least two periodic structures is measured and ratios of the asymmetries are determined. The ratios and a relationship between the focus and the side wall asymmetry for each structure is used to determine the focus of the lithographic apparatus on the substrate.02-23-2012
20120140194Maskless Exposure Apparatus - According to example embodiments, a maskless exposure apparatus includes a light source array including a plurality of light sources, a focusing element array including a plurality of focusing elements, and an image forming lens unit between the focusing element array and a substrate. The focusing element array is configured to perform a first focusing operation to focus light beams emitted from the plurality of light sources. The image forming lens unit is configured to perform a second focusing operation on the focused light beams to form focused light spots on the surface of the substrate. The focused light spots form a pattern on the substrate.06-07-2012
20120147344ACTUATORS AND MICROLITHOGRAPHY PROJECTION EXPOSURE SYSTEMS AND METHODS USING THE SAME - An actuator includes a housing, a movable part, and an advancing unit that is at least temporarily connected to the movable part. The advancing unit includes a deformation unit and a deformer configured to deform the deformation unit with a vector component perpendicular to an effective direction of the actuator so that a total length of the deformation unit changes in the effective direction of the actuator as a result of the deformation. The movable part is configured to move in the effective direction of the actuator upon a removal of the vector component on the deformation unit and the deformation unit is disposed along the effective direction of the actuator upon the removal of the vector component on the deformation unit.06-14-2012
20120162623SURFACE POSITION DETECTION APPARATUS, EXPOSURE APPARATUS, AND EXPOSURE METHOD - A surface position detection apparatus capable of highly precisely detecting the surface position of a surface to be detected without substantially being affected by relative positional displacement due to a polarization component occurring in a light flux having passed through a reflective surface. In the apparatus, a projection system has a projection side prism member (06-28-2012
20120194792METHOD AND SYSTEM TO PREDICT LITHOGRAPHY FOCUS ERROR USING SIMULATED OR MEASURED TOPOGRAPHY - A method and system to predict lithography focus error using chip topography data is disclosed. The chip topography data may be measured or simulated topography data. A plane is best fitted to the topography data, and residuals are computed. The residuals are then used to make a prediction regarding the focus error. The density ratio of metal to dielectric may also be used as a factor in determining the predicted focus error.08-02-2012
20120200838METHOD FOR A LITHOGRAPHIC APPARATUS - A method of increasing a depth of focus of a lithographic apparatus is disclosed. The method includes forming diffracted beams of radiation using a patterning device pattern; and transforming a phase-wavefront of a portion of the diffracted beams into a first phase-wavefront having a first focal plane for the lithographic apparatus, and a second phase-wavefront having a second, different focal plane, wherein the transforming comprises: subjecting a phase of a first portion of a first diffracted beam and a phase of a corresponding first portion of a second diffracted beam to a phase change which results in an at least partial formation of the first phase-wavefront, and subjecting a phase of a second portion of the first diffracted beam and a phase of a corresponding second portion of the second diffracted beam to a phase change which results in an at least partial formation of the second phase-wavefront.08-09-2012
20120206701ABERRATION MEASUREMENT METHOD, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - A method for measuring a spherical aberration amount of a projection optical system that projects an image of a pattern formed on an original plate onto a substrate, includes: obtaining a first focal position in a direction of an optical axis of the projection optical system under a first measurement condition; obtaining a second focal position in the direction of the optical axis of the projection optical system under a second measurement condition; calculating the spherical aberration amount of the projection optical system based on a difference between the first focal position and the second focal position. Under the first measurement condition the focal position in the direction of the optical axis with respect to the spherical aberration amount does not change; and under the second measurement condition the focal position in the direction of the optical axis with respect to the spherical aberration amount changes.08-16-2012
20120229784MIRROR FOR USE IN A MICROLITHOGRAPHY PROJECTION EXPOSURE APPARATUS - A mirror including a substrate and a reflective coating that includes a first group of layers and a second group of layers arranged between the substrate and the first group of layers. Both the first and second groups of layers include a plurality of alternating first material layers and second material layers, arranged one above another. The refractive index of the first material for radiation in the range of 5-30 nm is greater than the refractive index of the second material in that wavelength range. The first group of layers is configured to have a number of layers that is greater than 20, such that, upon irradiation with radiation having a wavelength in the range of 5-30 nm, less than 20% of the radiation reaches the second group of layers, which has a layer thickness variation for correcting the surface form of the mirror.09-13-2012
20120249986DETERMINATION METHOD, CONTROL METHOD, DETERMINATION APPARATUS, PATTERN FORMING SYSTEM AND PROGRAM - A determination method, a control method, a determination apparatus, a pattern forming system, and a storage medium can determine a replacement time of a focus ring accurately and quickly. The determination method is capable of determining the replacement time of a focus ring that surrounds a substrate to increase uniformity of a pattern in a surface of the substrate when the pattern is formed by etching a film on the substrate. The determination method includes measuring a shape or a critical dimension of the pattern; and determining the replacement time of the focus ring based on the measured shape or the measured critical dimension of the pattern.10-04-2012
20120262687APPARATUS AND METHODS FOR KEEPING IMMERSION FLUID ADJACENT TO AN OPTICAL ASSEMBLY DURING WAFER EXCHANGE IN AN IMMERSION LITHOGRAPHY MACHINE - Apparatus and methods keep immersion liquid in a space adjacent to an optical assembly. An optical assembly projects an image onto a substrate supported adjacent to the optical assembly by a substrate table. An insertion member insertable into the space between the optical assembly and the substrate, the substrate table, or both, divides the immersion liquid into a first portion and a second portion, the first portion disposed between the optical assembly and the insertion member, and the second portion disposed between the insertion member and the substrate, the substrate table, or both. The insertion member keeps the optical assembly in contact with the first portion when the substrate is moved away from being disposed adjacent to the optical assembly.10-18-2012
20120281192LITHOGRAPHIC APPARATUS AND METHOD - A method of obtaining information indicative of the topography of a surface of a flexible substrate, the method including directing a beam of radiation at the surface of the flexible substrate; and detecting changes in intensity distribution, or angle of reflection, of the beam of radiation after the beam of radiation has been reflected from the surface of the substrate to obtain information indicative of the topography of the surface of the flexible substrate.11-08-2012
20130003031METHOD OF MEASURING FOCUS OF A LITHOGRAPHIC PROJECTION APPARATUS - A method of measuring focus of a lithographic projection apparatus includes exposure of a photoresist covered test substrate with a plurality of verification fields. Each of the verification fields includes a plurality of verification markers, and the verification fields are exposed using a predetermined focus offset. After developing, an alignment offset for each of the verification markers is measured and translated into defocus data using a transposed focal curve.01-03-2013
20130070224PROJECTION LENS SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE INSTALLATION - A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.03-21-2013
20130083304VERTICAL CAVITY SURFACE EMITTING LASER, VERTICAL CAVITY SURFACE EMITTING LASER APPARATUS, OPTICAL TRANSMISSION APPARATUS, AND INFORMATION PROCESSING APPARATUS - A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.04-04-2013
20130088696SETTING METHOD OF EXPOSURE APPARATUS, SUBSTRATE IMAGING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A method of setting an exposure apparatus to expose exposure sectors defined on a resist film formed on a surface of a substrate with proper values of an exposure amount and a focus value for forming a pattern having a predetermined dimension includes exposing and developing an exposure sector defined on a reference substrate by a first exposure apparatus having a first state, and imaging the same. The method exposes and develops exposure sectors defined on an inspection substrate by a second exposure apparatus having a second state where at least one of the exposure amount and the focus value is unknown, and forms and images a pattern on the inspection substrate. The method determines the proper values for the exposure amount and the focus value for the second state based on luminance of the exposure sector of reference data and luminances of the exposure sectors of inspection data.04-11-2013
20130120726METHOD OF STRUCTURING A PHOTOSENSITIVE MATERIAL - A method of structuring a photosensitive material is disclosed. The method includes illuminating a first object structure and projecting a pattern of the first object structure onto a photosensitive material such that the projected pattern of the first object structure is focussed at a first focus position with respect to the photosensitive material. The method also includes illuminating a second object structure and projecting a pattern of the second object structure onto the photosensitive material such that the projected pattern of the second object structure is focussed at a second focus position with respect to the photosensitive material. The respective patterns are projected in the same projection direction.05-16-2013
20130162964Lithographic Apparatus and Device Manufacturing Method - Systems and methods provide the use of a two or three plate Alvarez lens located in a field plane of a projection lens of a lithographic apparatus. The Alvarez lens can be used to modify the shape of the focal plane to match a previously determined surface topography, while at the same time the Alvarez lens can be designed to include a built-in correction for astigmatism and other residual Zernike errors that would otherwise be introduced.06-27-2013
20130188161SCANNING EXPOSURE APPARATUS USING MICROLENS ARRAY - A scanning exposure apparatus uses a plurality of microlens arrays to project a mask exposure pattern onto a substrate. A CCD line camera detects an image on the substrate at this time, and using a first-layer pattern on the substrate as a reference pattern, detects whether or not the mask exposure pattern matches the reference pattern. In a case in which the patterns do not match, the microlens array is tilted from a direction that is parallel to the substrate, and the mask exposure pattern is made to match the reference pattern by using the microlens array to adjust the exposure area on the substrate. When the exposure pattern deviates from the reference pattern, it is thereby possible to detect the deviation during exposure and to prevent an exposure pattern misregistration, thereby enhancing the precision of the exposure pattern in an overlay exposure.07-25-2013
20130194558APPARATUS FOR FORMING FINE PATTERNS CAPABLE OF SWITCHING DIRECTION OF POLARIZATION INTERFERENCE PATTERN IN LASER SCANNING METHOD AND METHOD OF FORMING FINE PATTERNS USING THE SAME - An apparatus for forming fine patterns by employing polarization interference in a laser scanning method comprises a laser generator; a calcite wave plate configured to refract at least one of the S wave and the P wave, polarized by the polarization plate, an analyzer configured to make coincident with each other the polarization directions of the S wave and the P wave having the paths spaced apart from each other by the calcite wave plate; an exposure lens; an exposure head; an X stage; and a rotation stage configured to move the substrate mounting unit around a Z axis which is a vertical axis.08-01-2013
20130201463SYSTEM AND METHOD FOR LITHOGRAPHY WITH LEVELING SENSOR - Disclosed is a lithography system. The lithography system includes a radiation source for providing radiation energy; a reticle stage configured to hold a reticle; an imaging lens module configured to direct the radiation energy onto a substrate to form an image of the reticle; and a leveling sensor configured to receive a leveling signal from an exposure field of the reticle secured on the reticle stage.08-08-2013
20130235360Lithographic Method to Apply a Pattern to a Substrate and Lithographic Apparatus - A slit shaped area of a patterning device is illuminated to impart a radiation beam with a pattern in its cross-section. A projection system projects the patterned radiation beam onto a target portion of a substrate. As the radiation beam is scanned across the target portion of the substrate, a configuration of the projection system is adjusted and applies a pattern to the target portion. The adjusting may affect a magnitude of an image magnification component of the projection system, along the length of the slit shaped area, or an image distortion in a scan direction. The adjusting is arranged to compensate an effect on pattern overlay accuracy of a distortion of the patterning device.09-12-2013
20130250261OPTICAL SYSTEM AND METHOD OF USE - A method for improving imaging properties of an optical system and an optical system of this type having improved imaging properties are described. The optical system can have a plurality of optical elements. In some embodiments, an optical element is positioned and/or deformed by mechanical force action and by thermal action. In certain embodiments, one optical element is positioned and/or deformed by mechanical force action and another optical element is deformed by thermal action.09-26-2013
20130258301Test Structures and Methods - Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.10-03-2013
20130286369Using Customized Lens Pupil Optimization to Enhance Lithographic Imaging in a Source-Mask Optimization Scheme - A process for use in configuring a projection optics lithography system comprising providing a determination of pupil amplitude and phase optimization for the projection optics, for use in configuring the projection optics in accordance with the determination.10-31-2013
20130286370SYSTEM AND METHOD OF PREDICTING PROBLEMATIC AREAS FOR LITHOGRAPHY IN A CIRCUIT DESIGN - A system and method is provided which predicts problematic areas for lithography in a circuit design, and more specifically, which uses modeling data from a modeling tool to accurately predict problematic lithographic areas. The method includes identifying surface heights of plurality of tiles of a modeled wafer, and mathematically mimicking a lithographic tool to determine best planes of focus for exposure for the plurality of tiles.10-31-2013
20130293859LARGE FIELD PROJECTION OBJECTIVE FOR LITHOGRAPHY - A lithography projection objective (11-07-2013
20130335719EXPOSURE METHOD, EXPOSURE APPARATUS, AND PHOTOMASK - An exposure method includes: exposing, with a photomask including a shot pattern including chip patterns arranged therein, a plurality of the shot patterns onto a wafer as a first pattern; aligning the photomask on the water so that a first region of the shot pattern overlaps the first pattern, a second region other than the first region of the shot pattern is outside the first pattern, and chip patterns are continuously arranged in the first pattern and the second region; adjusting focus on the water, with the photomask having been aligned on the wafer; and shielding the first region from light and exposing a pattern of the second region onto the wafer as a second pattern.12-19-2013
20140036244METHOD OF EXPOSING A SEMICONDUCTOR WAFER AND EXPOSURE APPARATUS - An exposure apparatus includes an autofocus scan processor configured to generate a detection signal indicating a defocused portion of a resist film over a semiconductor substrate, an exposure scan processor configured to perform an exposure process for the resist film, and a controller configured to feed back the detection signal from the autofocus scan processor to the exposure scan processor.02-06-2014
20140055764LITHOGRAPHIC APPARATUS, PROGRAMMABLE PATTERNING DEVICE AND LITHOGRAPHIC METHOD - In an embodiment, a lithographic apparatus is disclosed that includes a modulator configured to expose an exposure area of the substrate to a plurality of beams modulated according to a desired pattern and a projection system configured to project the modulated beams onto the substrate. The modulator may be moveable with respect the exposure area and/or the projection system may have an array of lenses to receive the plurality of beams, the array of lenses moveable with respect to the exposure area.02-27-2014
20140063478Focus Recipe Determination for a Lithographic Scanner - The present disclosure is directed to a method of determining one or more focus values for a lithographic scanner. According to an embodiment, an optical signal including at least a first variable and a second variable is detected by a optical analysis system from at least one test sample for a plurality of programmed focus error values. A first variable value showing sensitivity to focus is selected based upon a corresponding responsiveness of the second variable to change of focus and/or a corresponding linearity of raw focus with respect to the programmed focus error. At least one focus value for the lithographic scanner is determined based upon at least one determined raw focus value corresponding to the selected first variable value.03-06-2014
20140071415ON-PRODUCT FOCUS OFFSET METROLOGY FOR USE IN SEMICONDUCTOR CHIP MANUFACTURING - A focus monitor structure on a reticle includes a lithographic feature region, a horizontal grating region including a horizontal grating located on one side of the lithographic feature region, and a vertical grating region including a vertical grating located on the opposite side of the lithographic feature region. A polarized illumination beam causes a printed image of the lithographic feature region to shift either toward the direction of the horizontal grating region or toward the direction of the vertical grating region in a manner that depends on the sign of the focus offset of the photoresist layer relative to the lens of an exposure tool. The magnitude and sign of the focus offset can be monitored to provide a real-time feedback on the focus offset of the exposure tool by measuring the shift of the printed image of the lithographic feature region.03-13-2014
20140071416METHOD AND SYSTEM TO PREDICT LITHOGRAPHY FOCUS ERROR USING SIMULATED OR MEASURED TOPOGRAPHY - A method and system to predict lithography focus error using chip topography data is disclosed. The chip topography data may be measured or simulated topography data. A plane is best fitted to the topography data, and residuals are computed. The residuals are then used to make a prediction regarding the focus error. The density ratio of metal to dielectric may also be used as a factor in determining the predicted focus error.03-13-2014
20140098355CATOPTRIC OBJECTIVES AND SYSTEMS USING CATOPTRIC OBJECTIVES - In general, in one aspect, the invention features an objective arranged to image radiation from an object plane to an image plane, including a plurality of elements arranged to direct the radiation from the object plane to the image plane, wherein the objective has an image side numerical aperture of more than 0.55 and a maximum image side field dimension of more than 1 mm, and the objective is a catoptric objective.04-10-2014
20140146298DEVICE FOR MANUFACTURING A SURFACE USING CHARACTER PROJECTION LITHOGRAPHY WITH VARIABLE MAGNIFICATION - A device for charged particle beam lithography is disclosed which includes an inputting device, a character projection stencil and a reducing lens. The inputting device reads a set of shots, where each shot has a magnification. The character projection stencil contains a character pattern. The reducing lens introduces magnification variation of the stencil character pattern when writing the pattern onto a surface, where the magnification of the reducing lens can be varied from shot to shot.05-29-2014
20140192337LITHOGRAPHIC APPARATUS, METHOD OF SETTING UP A LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus having a programmable patterning device and a projection system. The programmable patterning device is configured to provide a plurality of radiation beams. The projection system has a lens group array configured to project the plurality of radiation beams onto a substrate. The projection system further includes a focus adjuster in an optical path corresponding to a lens group of the lens group array. The focus adjuster has an optical element having substantially zero optical power.07-10-2014
20140204355Method for Exposing an Area on a Substrate to a Beam and Photolithographic System - Embodiments of the invention describe a method for exposing an area on a substrate to a beam. The method includes adjusting a focus offset of the beam with respect to the area on the substrate, tilting the beam or tilting the substrate, and exposing the area on the substrate with the beam, thereby generating locations within the area exposed with different foci. Furthermore embodiments describe computer programs for controlling a photolithographic system to do the same and a photolithographic system for doing the same.07-24-2014
20140233001APPARATUS AND METHOD FOR PERFORMING MULTI-BEAM BASED LITHOGRAPHY - An apparatus for performing lithography includes a light source that emits light. A light enhancer is configured to receive and enhance the emitted light. The light enhancer includes a first lens and a second lens. A first position adjusting unit is configured to adjust a position of the second lens. A lens array is configured to separate the light enhanced by the light enhancer into multiple beams, and focus the multiple beams.08-21-2014
20140233002EXPOSURE APPARATUS, METHOD FOR PRODUCING DEVICE, AND METHOD FOR CONTROLLING EXPOSURE APPARATUS - A liquid immersion exposure apparatus includes a projection system, a liquid supply inlet, a liquid collection outlet, a separator fluidically connected to the liquid collection outlet, the separator separating one of liquid and gas, which have been collected via the liquid collection outlet from the other, and a flow-meter configured to measure an amount of the liquid collected via the liquid collection outlet.08-21-2014
20140233003IMMERSION PHOTOLITHOGRAPHY SYSTEM AND METHOD USING MICROCHANNEL NOZZLES - A liquid immersion photolithography system includes an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection optical system and the substrate. An optional plurality of micronozzles are arranged around the periphery of one side of the projection optical system so as to provide a substantially uniform velocity distribution of the liquid flow in an area where the substrate is being exposed.08-21-2014
20140233004LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - An immersion lithographic projection apparatus is disclosed in which liquid is provided between a projection system of the apparatus and a substrate. The use of both liquidphobic and liquidphilic layers on various elements of the apparatus is provided to help prevent formation of bubbles in the liquid and to help reduce residue on the elements after being in contact with the liquid.08-21-2014
20140240683FOCUS POSITION ADJUSTING APPARATUS, RETICLE, FOCUS POSITION ADJUSTING PROGRAM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a step difference estimation unit, an assist pattern generation unit, and a spherical aberration conversion unit are installed. The step difference estimation unit estimates step difference of a processing layer. The assist pattern generation unit adds an assist pattern having different sensitivity to spherical aberration in an exposure process to a mask pattern based on the step difference of the processing layer. The spherical aberration conversion unit converts the step difference of the processing layer into the spherical aberration.08-28-2014
20140240684EXPOSURE APPARATUS, EXPOSURE METHOD, AND METHOD FOR PRODUCING DEVICE - An exposure apparatus having a projection system with a final element projects exposure light to an upper surface of a substrate through liquid between the final element and the substrate upper surface. A liquid confinement member has a recovery outlet via which the liquid is removed along with gas, the recovery outlet being arranged such that the substrate upper surface faces the recovery outlet, the recovery outlet surrounding a path of the exposure light and the liquid confinement member confining the liquid to an area that is smaller than an area of the substrate upper surface by removing the liquid from a gap between the confinement member and the substrate upper surface. A first support member supports the projection system, and a second support member supports the liquid confinement member. An anti-vibration system limits vibrations from being transmitted from the second support member to the projection system.08-28-2014
20140247436EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD - An exposure apparatus is equipped with a fine movement stage that can hold a liquid with a projection optical system when the stage is at a position facing an outgoing surface of the projection optical system, and a blade that comes into proximity within a predetermined distance of the fine movement stage when the fine movement stage is holding the liquid with the projection optical system, and moves along with the fine movement stage while maintaining the proximity state, and then holds the liquid with the projection optical system after the movement. Accordingly, a plurality of stages will not have to be placed right under the projection optical system interchangeably, which can suppress an increase in footprint of the exposure apparatus.09-04-2014
20140253890LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A substrate table of an immersion lithographic apparatus is disclosed which comprises a barrier configured to collect liquid. The barrier surrounds the substrate and is spaced apart from the substrate. In this way any liquid which is spilt from the liquid supply system can be collected to reduce the risk of contamination of delicate components of the lithographic projection apparatus.09-11-2014
20140253891TUNABLE WAVELENGTH ILLUMINATION SYSTEM - A lithographic apparatus comprises an alignment system including a tunable narrow pass-band filter configured to receive a broad-band radiation and to filter the broad-band radiation into narrow-band linearly polarized radiation. The tunable narrow pass-band filter is further configured to modulate an intensity and wavelength of the narrow-band radiation and to provide a plurality of pass-band filters at a same time or nearly the same time. The alignment system further includes a relay and mechanical interface configured to receive the narrow-band radiation and to adjust a profile of the narrow-band radiation based on physical properties of alignment targets on a substrate. The adjusted narrow-band radiation is focused on the alignment targets using a focusing system.09-11-2014
20140285782LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - An exposure apparatus having a projection system configured to project a plurality of radiation beams onto a target and an image slicer. The image slicer is arranged in an inverted configuration such that, if an input image formed of a plurality of separated image regions were provided to the image slicer, it would output an output image formed from the plurality of image regions, each arranged to adjoin an adjacent image region. The exposure apparatus is configured such that each of the radiation beams is input into the image slicer at a location corresponding to a respective one of the separated image regions.09-25-2014
20140293250FOCUS CONTROL APPARATUS FOR PHOTOLITHOGRAPHY - A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.10-02-2014
20140293251Projection System, Lithographic Apparatus, Method of Projecting a Beam of Radiation onto a Target and Device Manufacturing Method - A projection system is provided that includes a sensor system that measures at least one parameter that relates to the physical deformation of a frame that supports the optical elements within the projection system, and a control system that, based on the measurements from the sensor system, determines an expected deviation of the position of the beam of radiation projected by the projection system that is caused by the physical deformation of the frame.10-02-2014
20140293252EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - An exposure apparatus exposes a substrate with illumination light via a projection optical system and liquid, and includes a controller that controls movement of first and second movable members each of which can hold a substrate. The controller executes a relative movement between the first and second movable members such that, while one of the movable members is arranged opposed to the projection optical system, the other of the movable members comes close to the one of the movable members, and so as to move the close first and second movable members relative to the projection optical system such that the other of the movable members is arranged opposed to the projection optical system in place of the one of the movable members while substantially maintaining a liquid immersion region under the projection optical system.10-02-2014
20140300878EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - In an immersion exposure apparatus, a projection system includes an optical element having a light emitting surface that contacts immersion liquid and an outer surface above the light emitting surface. A holding member holds the optical element, and a liquid confinement member surrounds the optical element to form a gap between the optical element and the liquid confinement member. The outer surface of the optical element includes a first part extending upwardly with respect to the light emitting surface, and a second part above the gap and extending radially outwardly with respect to the first part. The gap is between the first part and an inner surface of the liquid confinement member, which has an upper surface extending radially outwardly with respect to the inner surface. The holding member holds the optical element over a portion of the upper surface of the liquid confinement member.10-09-2014
20140307240LASER INDUCED THERMAL IMAGING DEVICE AND LASER INDUCED THERMAL IMAGING METHOD - A laser induced thermal imaging device includes a substrate stage configured to support a substrate and a donor film; a beam radiation portion configured to emit a laser beam toward the donor film to image an imaging layer of the donor film on a pixel region on the substrate; an error measurement portion configured to determine a position of the laser beam and a position of the pixel region from the donor film to measure a pattern error; and a stage moving portion configured to move the substrate stage in accordance with the pattern error to correct the pattern error.10-16-2014
20140307241EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An apparatus which projects a pattern of an original onto a substrate by a projection optical system within a chamber to expose the substrate, comprises a measurement unit which performs measurement to calculate a deformation amount of the original, and a controller which calculates a predicted deformation amount of the original and corrects a projection magnification of the projection optical system so as to correct the predicted deformation amount, based on information representing a relationship between the deformation amount with reference to a shape of the original at a certain temperature and a time for which the original receives exposure light, a deformation amount of the original before exposure determined based on a measurement value obtained by measuring, by the measurement unit, the deformation amount of the original loaded into the chamber and unused for exposure, and the time for which the original receives the exposure light.10-16-2014
20140313496Lithographic Apparatus and Method - A lithographic apparatus comprising a support structure constructed to support a patterning device, the patterning device being capable of imparting an EUV radiation beam with a grating in its cross-section to form a patterned EUV radiation beam, and a projection system configured to project the patterned EUV radiation beam onto a target portion of the substrate, wherein the support structure is provided with a grating comprising a series of first reflective portions which alternates with a series of second reflective portions, the second reflective portions having a reflectivity which is less than the reflectivity of at least part of the first reflective portions and which is greater than zero.10-23-2014
20140320833OPTICAL ARRANGEMENT OF AUTOFOCUS ELEMENTS FOR USE WITH IMMERSION LITHOGRAPHY - A lithographic projection apparatus includes a projection system having a last element, by which an exposure light is projected onto an upper surface of a wafer through liquid locally covering a portion of the upper surface of the wafer. The last element has a lower surface from which the exposure light is emitted. The last element also has an outer surface which extends upwardly from an edge portion of the lower surface. The apparatus also includes a space along the outer surface of the last element, to which the liquid is supplied from above the lower surface of the last element. The space is defined by the outer surface of the last element and a surface opposing the outer surface of the last element.10-30-2014
20140340661EXPOSURE APPARATUS AND METHOD OF MANUFACTURING ARTICLE - The present invention provides an exposure apparatus which exposes a substrate, comprising a substrate stage configured to be movable while holding the substrate, a measurement unit configured to measure a height of the substrate by irradiating the substrate with light and detecting the light reflected by the substrate, and a control unit configured to control the measurement unit, wherein the control unit obtains a velocity profile of the substrate stage and decides, based on the velocity profile, a plurality of timings to perform measurement by the measurement unit to equally space a plurality of measurement portions on the substrate measured by the measurement unit in a state in which an acceleration of the substrate stage is nonzero.11-20-2014
20140347644SYSTEM AND METHOD FOR PERFORMING LITHOGRAPHY PROCESS IN SEMICONDUCTOR DEVICE FABRICATION - Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.11-27-2014
20140354968FOCUSING METHOD, FOCUSING APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD - A target object has an upper surface including a first surface and a second surface located below the first surface. A method of focusing an optical system includes: measuring a surface position of the first surface; measuring a surface position of the second surface; obtaining, based on a measurement results of the surface position of the first surface, an in-focus condition in which the optical system is focused on the first surface; obtaining information about a step amount between the first surface and the second surface based on the measurement results of the surface positions of the first surface and the second surface; and focusing the optical system on the second surface based on the in-focus condition and the information about the step amount.12-04-2014
20150015859DIGITAL EXPOSURE DEVICE USING DIGITAL MICRO-MIRROR DEVICE AND A METHOD FOR CONTROLLING THE SAME - Provided is a digital exposure device. The digital exposure device includes a stage mounted with a substrate on which a pattern is formed, a first light source, a first head, and a digital micro-mirror device control unit. The stage is configured to move in a scan direction. The first light source is configured to provide a first light. The first head is spaced apart from the stage in a first direction and is configured to receive the first light, to generate at least one spot beam by modulating the first light, and to project the at least one spot beam onto the substrate. The digital micro-mirror device control unit is configured to control an energy of the at least one spot beam generated from the first head to be inversely proportional to a size of the at least spot beam generated from the first head.01-15-2015
20150015860Reticles, And Methods Of Mitigating Asymmetric Lens Heating In Photolithography - A method of mitigating asymmetric lens heating in photolithographically patterning a photo-imageable material using a reticle includes determining where first hot spot locations are expected to occur on a lens when using a reticle to pattern a photo-imageable material. The reticle is then fabricated to include non-printing features within a non-printing region of the reticle which generate additional hot spot locations on the lens when using the reticle to pattern the photo-imageable material. Other implementations are contemplated, including reticles which may be independent of method of use or fabrication.01-15-2015
20150042969LITHOGRAPHY APPARATUS, AND ARTICLE MANUFACTURING METHOD - A lithography apparatus includes a measuring station that includes a first measuring device configured to measure a height of a substrate holder, and a second measuring device configured to measure a height of a surface of a substrate held by the holder, and a patterning station that includes a third measuring device configured to measure a height of the holder, and patterns the substrate held by the holder based on an output of the second measuring device. The patterning station includes a fourth measuring device configured to measure a height of a surface of a substrate held by the holder. The lithography apparatus includes a controller configured to obtain a correction value for an output obtained from at least one of the first and third measuring devices based on outputs of the second and fourth measuring devices with respect to a substrate held by the holder.02-12-2015
20150055105EXPOSURE APPARATUS, EXPOSURE METHOD, AND EXPOSURE PROGRAM - According to one embodiment, a scan control unit, a focus control unit, and a focus control region setting unit are provided. The scan control unit performs scan control of exposure light on an XY plane, the focus control unit performs focus control of the exposure light, and the focus control region setting unit sets a focus control region such that focus control ranges in an X-axis direction and in a Y-axis direction on the XY plane are different each other.02-26-2015
20150085266DIFFERENTIAL DOSE AND FOCUS MONITOR - A dose and focus monitor structure includes at least one complementary set of unit dose monitors and at least one complementary set of unit focus monitors. Each complementary set of unit dose monitors generate edges on a photoresist layer such that the edges move in opposite directions as a function of a dose offset. Each complementary set of unit focus monitors generates edges on the photoresist layer such that the edges move in opposite directions as a function of a focus offset. The dose and focus monitor structure generates self-compensating differential measurements of the dose offset and the focus offset such that the dose offset measurement and the focus offset measurement are independent of each other.03-26-2015
20150085267Method of Determining Focus Corrections, Lithographic Processing Cell and Device Manufacturing Method - A method of, and associated apparatus for, determining focus corrections for a lithographic projection apparatus. The method comprises exposing a plurality of global correction fields on a test substrate, each comprising a plurality of global correction marks, and each being exposed with a tilted focus offset across it; measuring a focus dependent characteristic for each of the plurality of global correction marks to determine interfield focus variation information; and calculating interfield focus corrections from the interfield focus variation information.03-26-2015
20150092169EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD - An exposure apparatus comprises a controller configured to control scanning of an original holding unit and a substrate holding unit so as to expose a first pattern forming area onto a second pattern forming area exposed in advance on the substrate via a second projection optical system having a second projection magnification differing from a first projection magnification with the first pattern forming area superimposed on the second pattern forming areas. In particular, the controller changes the operation of the original holding unit or the substrate holding unit among the plurality of second pattern forming areas based on the state of the second pattern forming areas or the state of the patterns formed on the original while the first pattern forming areas are scanning-exposed onto the plurality of second pattern forming areas in a single scanning between the original holding unit and the substrate holding unit.04-02-2015
20150092170METHOD FOR REPAIRING OPTICAL ELEMENTS, AND OPTICAL ELEMENT - A method for repairing a collector for an EUV projection exposure apparatus having a first coating and a second coating, wherein the first coating is arranged between the second coating and a surface of the collector. The method includes completely or partly removing the first coating by treatment with a first chemical solution, and applying a new first coating.04-02-2015
20150109594Multiple Phase-Shift Photomask and Semiconductor Manufacturing Method - Manufacturing of semiconductor devices often involves performed photolithography to pattern and etch the various features of those devices. Such photolithography involves masking and focusing light onto a surface of the semiconductor device for exposing and etching the features of the semiconductor devices. However, due to design specifications and other causes, the semiconductor devices may not have a perfectly flat light-incident surface. Rather, some areas of the semiconductor device may be raised or lowered relative to other areas of the semiconductor device. Therefore, focusing the light on one area causes another to become unfocused. By carefully designing a photomask to cause phase shifts of the light transmitted therethrough, focus across all areas of the semiconductor device can be achieved during photolithography, which results in sharp and accurate patterns formed on the semiconductor device.04-23-2015
20150109595OPTICAL ARRANGEMENT OF AUTOFOCUS ELEMENTS FOR USE WITH IMMERSION LITHOGRAPHY - A lithographic projection apparatus includes a projection optics having a last element, by which an exposure light is projected onto an upper surface of a wafer through liquid covering a portion of the upper surface. The last element has a convex-shape incident surface, an exit surface from which the exposure light is emitted, and an outer surface arranged above the exit surface. The outer surface of the last element has a lower portion, and extends radially-outwardly and upwardly from the lower portion. The apparatus also includes a gap along the outer surface of the last element, the gap being defined between the outer surface of the last element and an opposing surface.04-23-2015
20150131067LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A field manipulator to provide high resolution control of position in the XY plane and/or focus control. The field manipulator includes a plate located between the patterning device and the substrate. Control of the XY position is provided by tilting of the plate, while control of the focus position may be provided by localized deformation of the plate. Both adjustments may be performed by one or more actuators that act upon one or more edges of the plate. In an embodiment, two substantially parallel plates are provided and focus control can be provided by changing the spacing between them. A liquid may be provided between the plates which may be temperature controlled to adjust the focus by changing the refractive index of the liquid.05-14-2015
20150146180METHOD FOR FABRICATING NANOANTENNA ARRAY, NANOANTENNA ARRAY CHIP AND STRUCTURE FOR LITHOGRAPHY - A method for fabricating a nanoantenna array may include forming a resist layer on a substrate, forming a focusing layer having a dielectric microstructure array on the resist layer, diffusing light one-dimensionally in a specific direction by using a linear diffuser, forming an anisotropic pattern on the resist layer by illuminating the light diffused by the linear diffuser on the focusing layer and the resist layer, depositing a material suitable for a plasmonic resonance onto the substrate and the resist layer on which the pattern is formed, and forming a nanoantenna array on the substrate by removing the resist layer and the material deposited on the resist layer. A light diffusing angle by the linear diffuser and a size of the dielectric microstructure are determined based on an aspect ratio of the pattern to be formed.05-28-2015
20150293462LITHOGRAPHY APPARATUS HAVING DUAL RETICLE EDGE MASKING ASSEMBLIES AND METHOD OF USE - A lithography apparatus includes a plurality reticle edge masking assemblies (REMAs), wherein each REMA of the plurality of REMAs is positioned to receive one of a plurality of light beams, and each REMA of the plurality of REMAs comprises a movable slit for passing the received light beam therethrough. The lithography apparatus includes a controller for controlling a speed of the movable slit based on a size of the movable slit, an intensity of the one or more collimated light beams, or a material to be patterned. The lithography apparatus further includes a single mask having a single pattern, wherein the mask is configured to receive light from every REMA of the plurality of REMAs. The lithography apparatus includes a projection lens configured to receive light transmitted through the single mask, wherein the lithography apparatus is configured to introduce an immersion liquid into a space adjacent to the projection lens.10-15-2015
20150331332IMAGE FORMING APPARATUS CAPABLE OF ADJUSTING LASER BEAMS EMITTED FROM A PLURALITY OF LIGHT SOURCES, AND METHOD OF CONTROLLING IMAGE FORMING APPARATUS - An image forming apparatus which makes it possible to grasp such settings of a phase and a main scanning magnification of laser beams as reduce occurrence of moire, by visually checking a plurality of pattern images. Pattern images are formed using a laser beam irradiated from a reference light source and a laser beam irradiated from an adjustment target light source for which each of different phase values is set as a phase setting value. A phase relationship between the phases of the laser beams is adjusted based on the pattern images. Pattern images are formed using a laser beam irradiated from the adjustment target light source for which each of different magnification values is set as a magnification setting value. The magnification of the laser beams is adjusted based on these pattern images.11-19-2015
20150338746EXPOSURE APPARATUS, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD - An exposure apparatus sequentially performs exposure in each of a plurality of underlying shot regions formed on a substrate and includes a controller. The controller is configured to judge, for each of the plurality of shot regions, whether to perform one-shot exposure without dividing the shot region or divided exposure, based on information of respective shapes of the plurality of shot regions, determine a shape of each partial region in the shot region in which the divided exposure is to be performed, and control the exposure so as to perform the one-shot exposure or the divided exposure in each of the plurality of shot regions based on a result of the judgment and the determined shape of each partial region.11-26-2015
20150338749Method of Determining Focus, Inspection Apparatus, Patterning Device, Substrate and Device Manufacturing Method - A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.11-26-2015
20150346610AERIAL MASK INSPECTION BASED WEAK POINT ANALYSIS - An analysis system that includes a processor and an memory module; wherein the memory module is arranged to store aerial images of an area of a mask, each aerial image corresponds to focus value out of a set of different focus values; wherein the processor is arranged to find weak points by processing the aerial images using different printability thresholds; and wherein the processor is arranged to determine focus and exposure values for generating a Process Window Qualification (PWQ) wafer to be manufactured using the mask in response to focus and exposure values associated with the weak points.12-03-2015
20160018743FOCUS METROLOGY METHOD AND PHOTOLITHOGRAPHY METHOD AND SYSTEM - The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.01-21-2016
20160033879METHODS AND CONTROLLERS FOR CONTROLLING FOCUS OF ULTRAVIOLET LIGHT FROM A LITHOGRAPHIC IMAGING SYSTEM, AND APPARATUSES FOR FORMING AN INTEGRATED CIRCUIT EMPLOYING THE SAME - Methods and controllers for controlling focus of ultraviolet light produced by a lithographic imaging system, and apparatuses for forming an integrated circuit employing the same are provided. In an embodiment, a method includes providing a wafer having a resist film disposed thereon. The resist film is patterned through illumination of a lithography mask with ultraviolet light at an off-normal incidence angle with a first test pattern formed at a first pitch and a second test pattern formed at a second pitch different from the first pitch. Non-telecentricity induced shift of the first and second test patterns is measured to produce relative shift data using a measurement device. Focus of the ultraviolet light is adjusted based upon comparison of the relative shift data to a pre-determined correlation between the non-telecentricity induced shift of the first and second test patterns as a function of focus error.02-04-2016
20160048081MASKLESS EXPOSURE METHOD AND A MASKLESS EXPOSURE DEVICE FOR PERFORMING THE EXPOSURE METHOD - A maskless exposure device includes a stage on which a substrate is disposed, an optical head, and an optical source part. The optical head irradiates light to the substrate. The light source part provides the optical head with a light. The optical head irradiates the light, according to an average-focus distance, to the substrate. The average-focus distance is determined by averaging best-focus distances for a plurality of regions of the substrate, respectively.02-18-2016
20160054664SYSTEM AND METHOD FOR PERFORMING LITHOGRAPHY PROCESS IN SEMICONDUCTOR DEVICE FABRICATION - Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.02-25-2016
20160062243Lithographic Method and Apparatus - A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.03-03-2016
20160091799HIGH-RESOLUTION MICROSCOPY AND PHOTOLITHOGRAPHY DEVICES USING FOCUSING MICROMIRRORS - The invention relates to large-field high-resolution microscopy and photolithography setups operating with polychromatic light. It includes the use of a plurality of focusing micromirrors.03-31-2016
20160161840MULTIPLE THRESHOLD CONVERGENT OPC MODEL - Methods of calibrating an OPC model using converged results of CD measurements from at least two locations along a substrate profile of a 1D, 2D, or critical area structure are provided. Embodiments include calibrating an OPC model for a structure to be formed in a substrate; simulating a CD of the structure at at least two locations along a substrate profile of the structure using the OPC model; comparing the simulated CD of the structure at each location against a corresponding measured CD; recalibrating the OPC model based on the comparing of each simulated CD against the corresponding measured CD; repeating the steps of simulating, comparing, and recalibrating until comparing at a first of the at least two locations converges to a first criteria and comparing at each other of the at least two locations converges to a corresponding criteria; and forming the structure using the recalibrated OPC model.06-09-2016
20160161856SCANNED-SPOT-ARRAY DUV LITHOGRAPHY SYSTEM - A DUV scanned-spot-array lithography system comprises an array of phase-Fresnel microlenses, which focus multiple radiation beams through intermediate foci at the object surface of a projection system. The intermediate foci are imaged by the projection system onto corresponding focused-radiation spots on an image plane, and the spots expose a photosensitive layer proximate the image plane as the layer is scanned in synchronization with modulation of the beams. The modulators may comprise micromechanical shutters proximate the intermediate foci for ON/OFF switching, in series with transmission grating modulators for gray-level control, and the microlenses may also be actuated to provide dynamic beam centering control. A nodal line printing technique may be used to provide ultra-high-resolution and high-throughput maskless printing capability in conjunction with multi-patterning or dual-wavelength recording processes.06-09-2016
20160252823ILLUMINATION SYSTEM FOR EUV PROJECTION LITHOGRAPHY09-01-2016
20190146358DISPLACEMENT BASED OVERLAY OR ALIGNMENT05-16-2019
20220137522EXPOSURE APPARATUS, EXPOSURE METHOD, AND ARTICLE MANUFACTURING METHOD - The control unit controls the relative position in an optical axis direction of the projection system and the relative position in a direction perpendicular to an optical axis direction at a third timing after a second timing based on a first distribution of illumination light detected by the detection system at a first timing and a second distribution of illumination light detected by the detection system at the second timing after the first timing, the illumination light detected at the first and second timings having passed through the first and second marks.05-05-2022

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