| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 355046000 | Plural | 13 |
| 20080198350 | Multiple exposure method - An exposure apparatus includes an illumination optical system for illuminating a predetermined mask, a projection optical system for projecting light from the mask to a predetermined exposure region, a first exposure device for illuminating the mask with a first sigma and for projecting light from the mask to the exposure region at a first spatial frequency passage spectrum of the projection system, so that the exposure region is exposed with a first pattern, and a second exposure device for illuminating the mask with a second sigma, different from the first sigma, and for projecting light from the mask to the exposure region at a second spatial frequency passage spectrum of the projection system, different from the first spatial frequency passage spectrum, so that the exposure region is exposed with a second pattern. A first exposure by the first exposure device and a second exposure by the second exposure device are carried out prior to a development process. | 08-21-2008 |
| 20080204682 | Exposure method and exposure apparatus, and device manufacturing method - By the combination of adjusting optical properties of an optical system by an irradiation unit irradiating non-exposure light on an optical element, which is movable, and adjusting the optical properties of the optical system with an optical properties adjustment unit by moving the optical element, for example, the change in the optical properties of the optical system caused by the temperature distribution of the optical elements whose center is at a position eccentric from the optical axis is corrected. Further, under a dipole illumination condition, in order to make optical properties of an optical system caused by non-rotational symmetry temperature distribution of optical elements in the vicinity of pupils into optical properties that can be corrected more easily by an optical properties adjustment unit, an irradiation unit irradiates non-exposure light on an optical element, which makes the optical element have a rotational symmetry temperature distribution. Accordingly, optical properties change in the optical system due to illumination light absorption can be effectively corrected. | 08-28-2008 |
| 20080246932 | Exposure apparatus, device manufacturing method and exposure method - An exposure apparatus has a first illumination system which illuminates a first mask, a second illumination system which illuminates a second mask located apart from the first mask along a first direction, and a projection optical system which forms a pattern image of the first mask and a pattern image of the second mask in parallel on a photosensitive substrate. An optical axis of an exit-side partial optical system of the first illumination system and an optical axis of an exit-side partial optical system of the second illumination system each are set along a plane parallel to a direction perpendicular to the first direction. | 10-09-2008 |
| 20090009735 | REFLECTIVE, REFRACTIVE AND PROJECTING OPTICAL SYSTEM; REFLECTIVE, REFRACTIVE AND PROJECTING DEVICE; SCANNING EXPOSURE DEVICE; AND METHOD OF MANUFACTURING MICRO DEVICE - A scanning exposure apparatus of the present invention is one for transferring a pattern of a first object onto a second object while projecting an image of the first object placed on a first plane, onto the second object placed on a second plane and changing a positional relation between the image of the first object and the second object in a scanning direction. The scanning exposure apparatus has a first projection optical system having a first field of view on the first plane and adapted to project an enlargement image of a portion of the first object in a first projection region on the second plane, based on light from the first field of view, and a second projection optical system having a second field of view on the first plane and adapted to project an enlargement image of a portion of the first object in a second projection region on the second plane, based on light from the second field of view. The scanning exposure apparatus satisfies the relation of Dp=β×Dm, where Dm is a first interval being an interval along the scanning direction on the first plane between the first field of view and the second field of view, Dp is a second interval being an interval along the scanning direction on the second plane between the first projection region and the second projection region, and β is a magnification of the first and second projection optical systems. | 01-08-2009 |
| 20090033892 | DOUBLE EXPOSURE OF A PHOTORESIST LAYER USING A SINGLE RETICLE - A composite exposure image is formed on a photoresist layer by applying a light beam through a reticle to form a first exposure image thereon, and thereafter, while maintaining the position of the reticle with respect to the photoresist layer, again applying a light beam through the reticle to form a second exposure image thereon. By adjusting the light beam differently in focus and intensity for each exposure, the combination of first and second exposure images form a pattern on the photoresist of lesser pitch than can be produced from a single exposure. The formation of a single pattern in the single resist layer from the two exposures avoids misalignment problems and eliminates the need for double exposure of a plurality of resist layers. | 02-05-2009 |
| 20090128788 | SYSTEM AND METHOD FOR MAKING PHOTOMASKS - The present application is directed a method for determining the position of photomask patterns in a mask making process. The method comprises providing one or more mask rules defining the minimum spacing between photomask patterns. The method further comprises determining the position of a first photomask pattern relative to an adjacent second photomask pattern, the first photomask pattern having a critical edge for defining a critical dimension of a first device structure and a non-critical edge for defining a non-critical dimension. The non-critical edge is attached to the critical edge so that the positioning of the non-critical edge will affect the length of the critical edge. The non-critical edge of the first photomask pattern is positioned a distance X from an edge of the second photomask pattern, wherein the distance X is chosen to be substantially the minimum spacing allowed by the mask rules. Embodiments directed to software modules for implementing the method and patterning processes employing the method are also disclosed. | 05-21-2009 |
| 20090168034 | Methods and Apparatus of Manufacturing a Semiconductor Device - Methods and apparatus of manufacturing a semiconductor device are provided. Embodiments regard producing a first pattern in a first layer of a semiconductor substrate, producing a second pattern in a second layer of the semiconductor substrate, and matching the first pattern and the second pattern. The matching includes determining a mismatch between the first pattern and the second pattern that would occur without the matching and precorrecting the mismatch in the first layer. | 07-02-2009 |
| 20100060871 | OFF-AXIS LIGHT SOURCE, LIGHT SCREEN PLATE, AND METHOD OF DEFINING DIFFERENT TYPES OF PATTERNS WITH SINGLE EXPOSURE - An off-axis light source is described, including an X-dipole illumination pattern, a Y-dipole illumination pattern and a quadrupole illumination pattern at the illumination surface thereof, wherein the illumination area of the quadrupole illumination pattern is smaller than that of the X- or Y-dipole illumination pattern. A light screen plate is also described, having corresponding openings therein and can be used to form the above off-axis light source. A method of defining different types of patterns with a single exposure is also described, which utilizes the above off-axis light source. | 03-11-2010 |
| 20120224155 | DIRECT WRITE LITHOGRAPHY SYSTEM - The invention pertains to a direct write lithography system comprising: A converter comprising an array of light controllable electron sources, each field emitter being arranged for converting light into an electron beam, the field emitters having an element distance between each two adjacent field emitters, each field emitter having an activation area; A plurality of individually controllable light sources, each light source arranged for activating one field emitter; Controller means for controlling each light source individually; Focusing means for focusing each electron beam from the field emitters with a diameter smaller than the diameter of a light source on an object plane. | 09-06-2012 |
| 20130120724 | Method for splitting a pattern for use in a multi-beamlet lithography apparatus - The invention relates to a method for splitting a pattern for use in a multi-beamlet lithography apparatus. The method comprises providing an input pattern to be exposed onto a target surface by means of a plurality of beamlets of the multi-beamlet lithography apparatus. Within the input pattern first and second regions are identified. A first region is a region that is exclusively exposable by a single beamlet of the plurality of beamlets. A second region is a region that is exposable by more than one beamlet of the plurality of beamlets. On the basis of an assessment of the first and second regions it is determined what portion of the pattern is to be exposed by each beamlet. | 05-16-2013 |
| 20130293857 | LITHOGRAPHY APPARATUS HAVING DUAL RETICLE EDGE MASKING ASSEMBLIES AND METHOD OF USE - A lithography apparatus includes at least two reticle edge masking assemblies (REMAs). The lithography apparatus further includes a light source configured to emit a light beam having a wavelength and a beam separating element configured to divide the light beam into more than one collimated light beam. Each REMA is positioned to receive one of the more than one collimating light beams and each REMA comprises a movable slit for passing the one collimated light beam therethrough. The lithography apparatus further includes at least one mask having a pattern, where the at least one mask is configured to receive light from at least one of the REMA and a projection lens configured to receive light from the at least one mask. A method of using a lithography apparatus is also discussed. | 11-07-2013 |
| 20140192334 | Pixel Blending For Multiple Charged-Particle Beam Lithography - System and method for applying mask data patterns to substrate in a lithography manufacturing process are disclosed. In one embodiment, the method includes providing a parallel imaging writer system, where the parallel imaging writer system includes a plurality of multiple charged-particle beam (MCB) imaging units arranged in one or more parallel arrays, receiving a mask data pattern to be written to a substrate, processing the mask data pattern to form a plurality of partitioned mask data patterns corresponding to different areas of the substrate, identifying one or more objects in an area of the substrate to be imaged by corresponding MCB imaging units, and performing multiple exposures to image the one or more objects in the area of the substrate by controlling the plurality of MCB imaging units to write the plurality of partitioned mask data patterns in parallel. | 07-10-2014 |
| 20150077731 | SYSTEMS AND METHODS FOR HIGH-THROUGHPUT AND SMALL-FOOTPRINT SCANNING EXPOSURE FOR LITHOGRAPHY - The present disclosure provides a lithography system comprising a radiation source and an exposure tool including a plurality of exposure columns densely packed in a first direction. Each exposure column includes an exposure area configured to pass the radiation source. The system also includes a wafer carrier configured to secure and move one or more wafers along a second direction that is perpendicular to the first direction, so that the one or more wafers are exposed by the exposure tool to form patterns along the second direction. The one or more wafers are covered with resist layer and aligned in the second direction on the wafer carrier. | 03-19-2015 |
