| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 338032000 | Magnetic field or compass (e.g., Hall effect type) | 6 |
| 20090128282 | Integrated Lateral Short Circuit for a Beneficial Modification of Current Distribution Structure for xMR Magnetoresistive Sensors - The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device. | 05-21-2009 |
| 20130038421 | MAGNETIC DETECTOR AND METHOD FOR MANUFACTURING THE SAME - A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer. | 02-14-2013 |
| 20130257581 | MAGNETIC DETECTING ELEMENT AND MAGNETIC SENSOR UTILIZING SAME - A magnetic detecting element includes a laminated structure where a fixed magnetic layer and a free magnetic layer are laminated through a non-magnetic material layer, wherein the fixed magnetic layer is a self-pinned type where a first magnetic layer and a second magnetic layer are laminated through a non-magnetic intermediate layer and the first magnetic layer and the second magnetic layer are antiparallelly magnetization-fixed, and the second magnetic layer is in contact with the non-magnetic material layer. The first magnetic layer is formed using FeCo serving as a material having a higher coercive force than the second magnetic layer. The film thickness of the first magnetic layer falls within a range greater than or equal to 10 Å and less than or equal to 17 Å, and is thinner than the film thickness of the second magnetic layer. The non-magnetic intermediate layer is formed using Rh. | 10-03-2013 |
| 20150070128 | MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer. | 03-12-2015 |
| 20160163431 | MAGNETORESISTIVE CURRENT LIMITER - A magnetoresistive current limiter, comprising a substrate, a magnetoresistive sensor layer, a first insulating layer, a coil, a second insulating layer, a magnetic shield layer, and an input electrode and output electrode. The coil is located between the magnetic shield layer and the magnetoresistive sensor layer. The first and second insulating layers are isolated from the magnetoresistive sensor layer and the coil, and from the coil and the magnetic shield layer, respectively; the magnetoresistive sensor layer and the coil are connected in series, and are connected to the input electrode and the output electrode. The magnetoresistive sensor layer comprises N rows of array-type magnetic tunnel junction lines; the coil comprises 2*N+M (N>1, M=−1 or 3) conductive lines in series or N+M (N>1, M=0 or 2) conductive lines in parallel; current flows in the same direction into the conductive lines located above or below the tunnel junction lines and produces, at the magnetic tunnel junction lines, a uniform magnetic field. The magnetic tunnel junction of the magnetically sensitive axis is perpendicular to the magnetic tunnel junction lines, and the magnetoresistive sensor layer has the feature of a monotonic or axisymmetric linear rise in resistance to the magnetic field. The magnetoresistive current limiter has the features of rapid response, continuous operation, and ability to increase or decrease current. | 06-09-2016 |
| 20100026447 | Persistent Current Switch - An improved persistent current switch design and method of operation are disclosed. By way of example, a persistent current switch circuit comprises a heating element and a switch element located proximate to the heating element, the switch element being substantially formed from a material (by way of example only, titanium) which exhibits a superconducting temperature value below a superconducting temperature value exhibited by a material (by way of example only, aluminum) used to provide a connection to the switch element. The switch element is responsive to the heating element such that the heating element is used to control whether or not the switch element is in a superconducting state. The switch element may also have a folded geometry. Such persistent current switches exhibit low power and low inductance. | 02-04-2010 |
| 338032000 | Superconductors | 1 |
| 20090128282 | Integrated Lateral Short Circuit for a Beneficial Modification of Current Distribution Structure for xMR Magnetoresistive Sensors - The invention relates to a magnetoresistive device formed to sense an externally applied magnetic field, and a related method. The magnetoresistive device includes a magnetoresistive stripe formed over an underlying, metallic layer that is patterned to produce electrically isolated conductive regions over a substrate, such as a silicon substrate. An insulating layer separates the patterned metallic layer from the magnetoresistive stripe. A plurality of conductive vias is formed to couple the isolated regions of the metallic layer to the magnetoresistive stripe. The conductive vias form local short circuits between the magnetoresistive stripe and the isolated regions of the metallic layer to alter the uniformity of a current flow therein, thereby improving the position and angular sensing accuracy of the magnetoresistive device. In an advantageous embodiment, the metallic layer is formed as electrically conductive stripes oriented at approximately a 45° angle with respect to an axis of the magnetoresistive device. | 05-21-2009 |
| 20130038421 | MAGNETIC DETECTOR AND METHOD FOR MANUFACTURING THE SAME - A first short-circuit layer and a second short-circuit layer are electrically connected to and integrally stacked onto only a first magnetoresistance effect element layer and a first resistance element layer, respectively, so as to achieve short-circuiting, and thereby adjusting electrical resistances of the first magnetoresistance effect element layer and the first resistance element layer. | 02-14-2013 |
| 20130257581 | MAGNETIC DETECTING ELEMENT AND MAGNETIC SENSOR UTILIZING SAME - A magnetic detecting element includes a laminated structure where a fixed magnetic layer and a free magnetic layer are laminated through a non-magnetic material layer, wherein the fixed magnetic layer is a self-pinned type where a first magnetic layer and a second magnetic layer are laminated through a non-magnetic intermediate layer and the first magnetic layer and the second magnetic layer are antiparallelly magnetization-fixed, and the second magnetic layer is in contact with the non-magnetic material layer. The first magnetic layer is formed using FeCo serving as a material having a higher coercive force than the second magnetic layer. The film thickness of the first magnetic layer falls within a range greater than or equal to 10 Å and less than or equal to 17 Å, and is thinner than the film thickness of the second magnetic layer. The non-magnetic intermediate layer is formed using Rh. | 10-03-2013 |
| 20150070128 | MAGNETORESISTIVE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY - According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer. | 03-12-2015 |
| 20160163431 | MAGNETORESISTIVE CURRENT LIMITER - A magnetoresistive current limiter, comprising a substrate, a magnetoresistive sensor layer, a first insulating layer, a coil, a second insulating layer, a magnetic shield layer, and an input electrode and output electrode. The coil is located between the magnetic shield layer and the magnetoresistive sensor layer. The first and second insulating layers are isolated from the magnetoresistive sensor layer and the coil, and from the coil and the magnetic shield layer, respectively; the magnetoresistive sensor layer and the coil are connected in series, and are connected to the input electrode and the output electrode. The magnetoresistive sensor layer comprises N rows of array-type magnetic tunnel junction lines; the coil comprises 2*N+M (N>1, M=−1 or 3) conductive lines in series or N+M (N>1, M=0 or 2) conductive lines in parallel; current flows in the same direction into the conductive lines located above or below the tunnel junction lines and produces, at the magnetic tunnel junction lines, a uniform magnetic field. The magnetic tunnel junction of the magnetically sensitive axis is perpendicular to the magnetic tunnel junction lines, and the magnetoresistive sensor layer has the feature of a monotonic or axisymmetric linear rise in resistance to the magnetic field. The magnetoresistive current limiter has the features of rapid response, continuous operation, and ability to increase or decrease current. | 06-09-2016 |
| 20100026447 | Persistent Current Switch - An improved persistent current switch design and method of operation are disclosed. By way of example, a persistent current switch circuit comprises a heating element and a switch element located proximate to the heating element, the switch element being substantially formed from a material (by way of example only, titanium) which exhibits a superconducting temperature value below a superconducting temperature value exhibited by a material (by way of example only, aluminum) used to provide a connection to the switch element. The switch element is responsive to the heating element such that the heating element is used to control whether or not the switch element is in a superconducting state. The switch element may also have a folded geometry. Such persistent current switches exhibit low power and low inductance. | 02-04-2010 |
