| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 338002000 | STRAIN GAUGE TYPE | 6 |
| 20100148916 | LOAD CELL - The load cell includes a strain generating body having a strain generated portion, and a strain detection element provided on a surface of the strain generating body in a portion corresponding to the strain generated portion and having an inversion portion and a straight portion. A creep characteristic is adjusted by a thickness of the strain generated portion in a portion corresponding to the inversion portion. | 06-17-2010 |
| 20110121937 | METHOD FOR MAKING A TRANSDUCER, TRANSDUCER MADE THEREFROM, AND APPLICATIONS THEREOF - A method for manufacturing or preparing thin-film stacks that exhibit moderate, finite, stress-dependent resistance and which can be incorporated into a transduction mechanism that enables simple, effective signal to be read out from a micro- or nano-mechanical structure. As the structure is driven, the resistance of the intermediate layers is modulated in tandem with the motion, and with suitable dc-bias, the motion is directly converted into detectable voltage. In general, detecting signal from MEMS or NEMS devices is difficult, especially using a method that is able to be integrated with standard electronics. The thin-film manufacturing or preparation technique described herein is therefore a technical advance in the field of MEMS/NEMS that could enable new applications as well as the ability to easily develop CMOS-MEMS integrated fabrication techniques. Also disclosed are: (i) transducers where current flows across a piezo layer from one major surface to the opposite major surface; and (ii) methods of making a transducer the resistivity of a piezoresistive layer is decreased and/or the gauge factor of a piezoresistive layer is increased. | 05-26-2011 |
| 20110128113 | STRAIN MEASURING DEVICE - A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions. | 06-02-2011 |
| 20120161921 | TUNABLE IMPEDANCE LOAD-BEARING STRUCTURES - A tunable impedance load bearing structure includes a support comprising an active material configured for supporting a load, wherein the active material undergoes a change in a property upon exposure to an activating condition, wherein the change in the property is effective to change an impedance characteristic of the support. | 06-28-2012 |
| 20120256720 | BENDING SENSOR AND METHOD FOR FABRICATING THE SAME - A bend-detecting (bending) sensor is provided, including a flexible substrate, at least a pair of electrode patterns spaced apart from each other provided on the flexible substrate, and a paste layer containing conductive particles. The paste layer is coated onto the flexible substrate where the electrode patterns are formed, such that when the flexible substrate is bent, the density of the conductive particles between the electrode patterns changes and an electric resistance between the electrode patterns also changes, thereby sensing deformation of the flexible substrate, and eventually, a target to which the flexible display element or the flexible substrate is attached. When the bending sensor is applied to the flexible display device, the electrode patterns and the paste layer may be formed on the flexible substrate which is to form the flexible display element, thus forming a bending sensing structure with a thickness of the flexible display element or less. | 10-11-2012 |
| 338004000 | Fluid- or gas pressure-actuated | 1 |
| 20090212899 | Low Pressure Transducer Using Beam and Diaphragm - A low-pressure transducer including a disc-shaped metal diaphragm to which a fluid pressure is applied, wherein the diaphragm contains a raised beam formed by thinning the entire exterior surface of the diaphragm except for the beam; and at least one silicon strain gage glass bonded to the beam, wherein the low-pressure transducer can accurately gage pressures at least as low as 15 psi. The present invention also comprises a method for manufacturing a pressure transducer including the steps of forming a cylindrical diaphragm having a top surface and a lower surface; establishing a diameter and a thickness of the diaphragm relative to an operational plane by a creating a hole axially through the transducer body that terminates at the lower surface; and creating a raised surface in the shape of a cross beam integral to the operational surface; and bonding one or more strain gages thereupon. | 08-27-2009 |
