Class / Patent application number | Description | Number of patent applications / Date published |
333262000 | Switch | 11 |
20090033444 | CONFIGURABLE HIGH FREQUENCY COAXIAL SWITCH - Various embodiments are provided herein for a configurable high frequency coaxial switch. The switch includes a switch housing module that has at least two ports and is adapted for operation in a wide frequency band. The switch also includes at least one frequency-matching port component module that is configured to connect a transmission line to one of the ports of the switch housing module. The at least one frequency-matching port component module is also configured to provide a match to a desired frequency range. In use, the switch housing module together with the at least one frequency-matching port component module allow for operation of the configurable high frequency coaxial switch at the desired frequency range. | 02-05-2009 |
20090160584 | MEMS SWITCH WITH IMPROVED STANDOFF VOLTAGE CONTROL - A MEMS switch is provided including a substrate, a movable actuator coupled to the substrate and having a first side and a second side, a first fixed electrode coupled to the substrate and positioned on the first side of the movable actuator to generate a first actuation force to pull the movable actuator toward a conduction state, and a second fixed electrode coupled to the substrate and positioned on the second side of the movable actuator to generate a second actuation force to pull the movable actuator toward a non-conducting state. | 06-25-2009 |
20090189718 | TRANSISTOR SINGLE-POLE-SINGLE-THROW CIRCUIT DEVICE - A transistor single-pole-single-throw circuit device includes at least a transistor single-pole-single-throw circuit having a first transistor and a second transistor, and an inductor capacitor (LC) resonator having an inductor and a capacitor connected in series, allowing two ends of the LC resonator connected to the first source and the first drain of the first transistor, respectively. The transistor single-pole-single-throw circuit device adopts an LC resonator having an inductor and a capacitor connected in series to connect with the first source and the first drain of the first transistor. The inductor couples and resonates with a parasitic capacitance of the transistor, to reduce signal loss due to emerged parasitic capacitance when the conventional single-pole-single-throw circuit selects a switch transistor with a larger width. | 07-30-2009 |
20090295513 | Programmable Microwave Circuit - The present invention relates to a programmable microwave circuit ( | 12-03-2009 |
20100073112 | RADIO FREQUENCY SWITCH AND APPARATUS CONTAINING THE RADIO FREQUENCY SWITCH - The present invention relates to A radio frequency (RF) switch and an apparatus including the RF switch. In an aspect of the present invention, an RF switch includes a transmission line having one end connected to an input terminal or an output terminal and the other end connected to a signal line and configured to transfer an RF signal, and a diode disposed between the input terminal and the transmission line or between the output terminal and the transmission line, the diode being configured to control whether or not to transmit the RF signal. In another aspect, an RF switch includes a transmission line having one end connected to an input terminal and the other end connected to an output terminal, and a diode disposed between the input terminal and the transmission line or between the output terminal and the transmission line, the diode being configured to control whether or not to transmit the RF signal. Here, a CRLH (Composite Right/Left-Handed) transmission line is employed as the transmission line. | 03-25-2010 |
20100123532 | Vanadium-dioxide front-end advanced shutter technology - A vanadium dioxide front-end advanced shutter device. The electronic shutter device is designed to protect receiver front-ends and other sensitive circuits from HPM pulse events such as HPM weapons, directed energy weapons, or EMPs. The shutter incorporates a transition material such as thin-film vanadium oxide (VOX) materials that exhibit a dramatic change in resistivity as their temperature is varied over a narrow range near a known critical temperature. A high-energy pulse causes ohmic heating in the shutter device, resulting in a state change in the VOX material when the critical temperature is exceeded. During the state change the VOX material transitions from an insulating state (high resistance) to a reflective state (low resistance). In the insulating state, the shutter device transmits the majority of the signal. In the reflective state, most of the signal is reflected and prevented from passing into electronics on the output side of the shutter device. | 05-20-2010 |
20100141362 | MULTI-ACTUATION MEMS SWITCH - A multi-actuation MEMS switch for high frequency signals includes a substrate, a heater disposed on the substrate, a co-planar waveguide disposed on a lowest metal layer, and a movable membrane including at least two metal layers, and an dielectric layer disposed between the co-planar waveguide and the movable membrane. The movable membrane is a fixed-fixed beam structure with a center indentation. When heat is generated and conducted to the movable membrane or electrostatic force is generated between the movable membrane and the co-planar waveguide or both forces are generated, the movable membrane will bend toward the co-planar waveguide. The position of the movable membrane change capacitance on signal line for switching the RF signal. | 06-10-2010 |
20100171575 | MICROELECTROMECHANICAL SYSTEM - The invention relates to microelectromechanical systems (MEMS), and more particularly, to MEMS switches using magnetic actuation. The MEMS switch may be actuated with no internal power consumption. The switch is formed in an integrated solid state MEMS technology. The MEMS switch is micron and/or nanoscale, very reliable and accurate. The MEMS switch can be designed into various architectures, e.g., a cantilever architecture and torsion architecture. The torsion architecture is more efficient than a cantilever architecture. | 07-08-2010 |
20130342289 | VARACTOR SHUNT SWITCHES WITH PARALLEL CAPACITOR ARCHITECTURE - A parallel capacitor varactor shunt switch device may include a shunt layer, a coplanar waveguide (CPW) layer, and a tunable thin film dielectric layer that is interposed between the shunt layer and the CPW layer. The tunable thin film dielectric layer electrically isolates the shunt layer from the CPW layer. The shunt layer includes a plurality of parallel shunt lines. The CPW layer includes a CPW signal transmission line with two CPW ground lines parallel to the CPW signal transmission line. A plurality of varactor areas equal in number to the plurality of parallel shunt lines are defined in the CPW signal transmission line, each varactor area corresponding to an overlap of the CPW signal transmission line with a respective shunt line and each respective parallel shunt line and its corresponding varactor area defines a capacitor. | 12-26-2013 |
20140266517 | RADIO FREQUENCY SWITCH AND PROCESSES OF SELECTIVELY REGULATING RADIO FREQUENCY ENERGY TRANSMISSION - Provided are radio frequency electromagnetic energy switches and processes of regulating the transmission of RF energy, that for the first time successfully employ a ChG PCM as a RF switching material. An inventive switch includes: a substrate; a first radio frequency energy conductive element on the substrate; a second radio frequency energy conductive element on the substrate; and a switch element on the substrate and connecting the first conductive element to the second conductive element, the switch element including a switching material; the switching material including a chalcogenide compound switchable between a first radio frequency electromagnetic energy conductivity value and a second radio frequency electromagnetic energy conductivity value by application of an activation energy to the switching material, such that radio frequency electromagnetic energy flowing in the first conductive element is either reflected off the switching material or transmitted through the switching material to the second conductive element. | 09-18-2014 |
20140340180 | IMPEDANCE MATCHING SWITCH CIRCUIT, IMPEDANCE MATCHING SWITCH CIRCUIT MODULE, AND IMPEDANCE MATCHING CIRCUIT MODULE - An impedance matching switch circuit module includes a first switch device connected to first and second high-frequency input/output terminals, a second switch device connected between the first high-frequency input/output terminal and a first matching terminal, and a third switch device connected between the second high-frequency input/output terminal and a second matching terminal. Impedance matching elements having appropriately set element values (inductances or capacitances) are connected to the first and second high-frequency input/output terminals and the first and second matching terminals, and on/off control is performed for the first, second, and third switch devices. | 11-20-2014 |