Class / Patent application number | Description | Number of patent applications / Date published |
330307000 | Integrated circuits | 52 |
20090039966 | Multi-Stage RF Amplifier Including MMICs and Discrete Transistor Amplifiers in a Single Package - A MMIC amplifier stage and a discrete transistor amplifier stage are housed in a single package. In one aspect, a multi-stage RF amplifier includes a package with an RF input lead and an RF output lead. The signal path from the RF input lead to the RF output lead includes one or more MMIC amplifier stages followed by one or more discrete transistor amplifier stages. Each MMIC amplifier stage includes a MMIC with at least one amplifier, and each discrete transistor amplifier stage includes at least one discrete transistor amplifier. All of the MMIC amplifier stages and discrete transistor amplifier stages are housed in the same package. | 02-12-2009 |
20090195320 | IMPLEMENTING LAYOUT OF INTEGRATED CIRCUIT CONTAINING OPERATIONAL AMPLIFIER - A method for implementing a layout of an integrated circuit containing an OP (operational amplifier) is disclosed. The method includes constructing an output path connecting an output terminal of the OP to an output pad of the OP; and constructing a feedback path connecting an input terminal of the OP to an element of the OP, the element lying in an area covering the output pad, in which a minimum distance between the element and the output pad is less than a tenth of length of the feedback path. The present invention also provides an integrated circuit device produced through the method. | 08-06-2009 |
20090212873 | Semiconductor device - Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits. | 08-27-2009 |
20090231043 | DISTRIBUTED AMPLIFIER AND INTEGRATED CIRCUIT - A plurality of transistors operate as amplification elements. An input side coupling circuit comprises a plurality of distributed constant lines connected in series, one terminal of which is an input terminal and the other terminal of which is a bias input terminal. Each of the connection nodes between these distributed constant lines is connected to each of the inputs of the transistors. An output side coupling circuit comprises a plurality of distributed constant lines connected in series, one terminal of which is an output terminal and the other terminal of which is a bias input terminal. Each of the connection nodes between these distributed constant lines is connected to each of the outputs of the transistors. A termination circuit is provided at the input side coupling circuit or the output side coupling circuit. The termination circuit comprises: a first resistor connected between the bias input terminal and a power supply; and a second resistor connected between this bias input terminal and the ground voltage. The resistance value of the first resistor is equal to or less than that of the second resistor. | 09-17-2009 |
20100109784 | MILLIMETER WAVE MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF FORMING SUCH INTEGRATED CIRCUITS - A description is provided of a high-frequency, multi-stage, millimeter wave amplifier integrated circuit, and of a method for designing and constructing the circuit. The methods and structures have been created to enable the construction of an amplifier offering substantial gain at a relatively high power and high frequency, but occupying minimal area of an integrated circuit die. Various structures and methodologies are described which each contribute to the practical feasibility of constructing an amplifier with such performance in a relatively compact space. | 05-06-2010 |
20100214023 | AMPLIFYING SYSTEM AND RELATED METHOD - An amplifying system includes an amplifier operated according to a supply voltage, and a detector coupled to the amplifier for generating a first control signal to the amplifier to disable an output stage of the amplifier when the supply voltage reaches a threshold. | 08-26-2010 |
20100231304 | SEMICONDUCTOR DEVICE - In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is. | 09-16-2010 |
20100271136 | Digital Control Interface In Heterogeneous Multi-Chip Module - A front-end module comprises a plurality of chips that includes first and second functional blocks and an interconnection circuit. The first functional block is formed using a first process type and includes a digital control circuit that generates a digital control signal in response to an external control signal from outside the front end module. The second functional block is formed using a second process type and includes a digitally controlled circuit controlled by the digital control signal generated by the first functional block. The second process type is different from the first process type. The interconnection circuit couples the digital control circuit and the digitally controlled circuit to provide the digital control signal to the digitally controlled circuit. In one aspect, the first functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process. The second functional block may be a power amplifier formed by a heterojunction bipolar transistor process. In another aspect, the first functional block may be a power amplifier formed by a heterojunction bipolar transistor process. The second functional block may be a low noise amplifier formed by a pseudomorphic high electron mobility transistor process. | 10-28-2010 |
20110025423 | MILLIMETER-WAVE MONOLITHIC INTEGRATED CIRCUIT AMPLIFIER WITH OPPOSITE DIRECTION SIGNAL PATHS AND METHOD FOR AMPLIFYING MILLIMETER-WAVE SIGNALS - Embodiments of a high-frequency millimeter-wave amplifier are generally described herein. The high-frequency millimeter-wave amplifier may be constructed on a substrate to operate at a frequency of at least 75 GHz. In some embodiments, the millimeter-wave amplifier may include at least first, second, third and fourth amplifier stages coupled in series. A single drain bias bond pad provided on the substrate to provide a drain bias voltage to the drains of the first, second, third and fourth amplifier stages. Drain bias lines may be electrically coupled to the single drain bias bond pad and extend at least partially alongside and between some of the amplifier stages. A signal path through the second amplifier stage extends in a direction opposite of signal paths through the first and third amplifier stages. In some embodiments, a 95 GHz amplifier is provided and configured occupy an area on the substrate of no greater than approximately four square millimeters. | 02-03-2011 |
20110115565 | CASCADED AMPLIFIERS WITH TRANSFORMER-BASED BYPASS MODE - Cascaded amplifiers with a transformer-based bypass mode are described. In an exemplary design, an apparatus includes first and second amplifiers and a circuit. The first amplifier (e.g., a driver amplifier) provides amplification in a high gain mode and a bypass mode. The second amplifier (e.g., a power amplifier) provides amplification in the high gain mode. The circuit is coupled between the first and second amplifiers and includes a transformer having (i) a primary coil coupled to the first amplifier and (ii) a secondary coil that provides an output signal in the bypass mode. The primary coil may be a load inductor for the first amplifier. The circuit may further include a series combination of a capacitor and a switch coupled in parallel with the primary coil, a switch coupled in series with the secondary coil, and/or a capacitor coupled in parallel with the secondary coil. | 05-19-2011 |
20110169575 | AMPLIFIER CIRCUIT AND INTEGRATED CIRCUIT THEREFOR - An amplifier circuit on a single die comprises a low voltage amplifier with a first common mode voltage and having an input and an output. A power amplifier has a second common mode voltage whose input is operably coupled to an output of the low voltage amplifier. The first common mode voltage and second common mode voltage are unequal. A compensation circuit is operably coupled to an input of the power amplifier and arranged to inject a DC-current or apply a common mode voltage into the power amplifier that is representative of a difference between the first common mode voltage and the second common mode voltage. | 07-14-2011 |
20110169576 | HIGH FREQUENCY AMPLIFIER - A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD) component shunt-connected at a first end to the transmission line, a SMD component terminal connected to a second end of the SMD component and partially exposed at a back surface of the package substrate, and an external terminal partially exposed at the back surface of the package substrate and connected to a first end of the transmission line, opposite a second end of the transmission line that is connected to the amplifying active device. | 07-14-2011 |
20110199158 | Semiconductor device - Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits. | 08-18-2011 |
20120056680 | Three Dimensional Inductor, Transformer and Radio Frequency Amplifier - A three dimensional on-chip radio frequency amplifier is disclosed that includes first and second transformers and a first transistor. The first transformer includes first and second inductively coupled inductors. The second transformer includes third and fourth inductively coupled inductors. Each inductor includes multiple first segments in a first metal layer; multiple second segments in a second metal layer; first and second inputs, and multiple through vias coupling the first and second segments to form a continuous path between the first and second inputs. The first input of the first inductor is coupled to an amplifier input; the first input of the second inductor is coupled to the first transistor gate; the first input of the third inductor is coupled to the first transistor drain, the first input of the fourth inductor is coupled to an amplifier output. The second inductor inputs and the first transistor source are coupled to ground. | 03-08-2012 |
20120062325 | POWER AMPLIFIER CIRCUIT - There is provided a power amplifier circuit capable of improving cross isolation between a high frequency band power coupler and a low frequency band power coupler, by directly transmitting power to the high frequency band power coupler and the low frequency band power coupler from a power amplifier, and forming a predetermined inductance circuit or an LC resonance circuit in a line transmitting the power to the high frequency band power coupler. The power amplifier circuit may include a power amplifying unit supplied with power from the outside and amplifying an input signal, a coupling unit having a high frequency band power coupler and a low frequency band power coupler, and an isolation unit including a first power line and a second power line, wherein the first power line has an inductor blocking signal interference generated in a predetermined frequency band. | 03-15-2012 |
20120068773 | HIGH FREQUENCY AMPLIFIER - A high frequency amplifier includes a package substrate, an amplifying active device disposed on a top surface of the package substrate, a transmission line connected to the amplifying active device and transmitting a high frequency signal, a surface mounted device (SMD) component shunt-connected at a first end to the transmission line, a SMD component terminal connected to a second end of the SMD component and partially exposed at a back surface of the package substrate, and an external terminal partially exposed at the back surface of the package substrate and connected to a first end of the transmission line, opposite a second end of the transmission line that is connected to the amplifying active device. | 03-22-2012 |
20120126900 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip with first and second low noise amplifier for amplifying an inputted signal. The chip is mounted over a wiring substrate which includes first and second electrodes and first, second and third GND electrodes. The wiring substrate includes first and second conductor patterns, wherein the first conductor pattern electrically connects the first and second GND electrodes and surrounds the first and second electrodes in a plan view. The second conductor pattern electrically connects the first conductor pattern and the third GND electrode to each other and is arranged between the first and second electrodes in the plan view. The first conductor pattern extends toward an inside of the semiconductor chip from the first and second GND electrodes in the plan view. | 05-24-2012 |
20120139645 | Apparatus and Method for Sensing and Converting Radio Frequency to Direct Current - The apparatus and method thereof accurately sense and convert a radio frequency (RF) current signal to direct current (DC) independent of process variation and temperature, and without requiring high speed, high voltage amplifiers for its operation. The apparatus comprises an AC coupled circuit that couples the RF signal from the main device to a sense device with an N:M ratio, a low pass filter system that extracts the DC content of the RF current signal, and a negative feedback loop that forces the DC content of the main device and the sensed device to be equal. Exemplary embodiments include a current sensor that provides feedback to protect an RF power amplifier from over-current condition, and a RF power detection and control in a RF power amplifier (PA) that multiplies the sensed output current by the sensed output voltage to be used as a feedback to control the PA's bias. | 06-07-2012 |
20120139646 | Circuit for an Amplifier - An amplifier ( | 06-07-2012 |
20120182074 | SINGLE DIE POWER AMPLIFIER WITH CLOSED LOOP POWER CONTROL - An apparatus on a single integrated circuit (IC) die includes a multiple stage power amplifier having at least first and second stages, a multiple stage voltage regulator for providing a regulated voltage signal to the at least first and second stages of the multiple stage power amplifier, a power coupler for providing a portion of a power output of the multiple stage power amplifier to a power detector, the power detector for developing a power detect signal, and a power control loop including at least the second stage and an output stage of the multiple stage power amplifier, the power coupler, the power detector, and at least one stage of the multiple stage voltage regulator, the power control loop controlling only the second stage and the output stage of the multiple stage power amplifier. | 07-19-2012 |
20120206206 | POWER AMPLIFIER WITH IMPROVED BANDWIDTH - An amplifier output impedance matching configuration including a first impedance transformer and one or more second impedance transformers. The first impedance transformer receives input signals from a power amplifier and generates output signals to a load. The one or more second impedance transformers are connected between the first impedance transformer and the load through which the output signals are passed. | 08-16-2012 |
20120206207 | AMPLIFIERS WITH DEPLETION AND ENHANCEMENT MODE THIN FILM TRANSISTORS AND RELATED METHODS - Embodiments of amplifiers with depletion and enhancement mode thin film transistors are disclosed herein. Other examples, devices, and related methods are also disclosed herein. | 08-16-2012 |
20120218045 | CLASS-C POWER AMPLIFIER - According to one embodiment, a class-C power amplifier includes an amplifying element whose power supply voltage is expressed as Vdc and whose maximum current is expressed as Imax, a conduction angle θo of the amplifying element being less than π(rad), and load impedance of a fundamental wave being expressed as Z | 08-30-2012 |
20120218046 | CLASS-AB POWER AMPLIFIER - A class-AB power amplifier according to the present embodiment includes an amplifying element whose power supply voltage is expressed as Vdc and whose maximum current is expressed as Imax, a conduction angle θo of the amplifying element being more than π(rad) and less than 2·π(rad), and load impedance of a fundamental wave being expressed as Z | 08-30-2012 |
20120218047 | VERTICAL BALLAST TECHNOLOGY FOR POWER HBT DEVICE - Power amplification devices are disclosed having a vertical ballast configuration to prevent thermal runaway in at least one stack of bipolar transistors formed on a semiconductor substrate. To provide a negative feedback to prevent thermal runaway in the bipolar transistors, a conductive layer is formed over and coupled to the stack. A resistivity of the conductive layer provides an effective resistance that prevents thermal runaway in the bipolar transistors. The vertical placement of the conductive layer allows for vertical heat dissipation and thus provides ballasting without concentrating heat. | 08-30-2012 |
20120229219 | MULTI-LEVEL POWER AMPLIFICATION SYSTEM - In general, in accordance with an exemplary aspect of the present invention, an electrical system configured to use power combining of microwave signals, such as those from monolithic microwave integrated circuits or MMICs is provided. In one exemplary embodiment, the system of the present invention further comprises a low loss interface that the circuits are directly connected to. In another exemplary embodiment, the circuits are connected to a pin which is connected to the low loss interface. In yet another exemplary embodiment of the present invention, a multi-layer power amplifier is provided that comprises two or more chassis and circuits attached to impedance matching interfaces according to the present invention. This multi-layered power amplifier is configured to amplify an energy signal and have a significantly reduced volume compared to existing power combiners. | 09-13-2012 |
20120235751 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip in which an internal circuit is formed, with the internal circuit having an output signal that fluctuates due to variation of fluctuation in electrical characteristics of multiple circuit elements constituting the internal circuit; a chip tab on which the semiconductor chip is mounted, with the semiconductor chip completely overlapping the chip tab and the circuit elements in the semiconductor chip arranged on the chip tab, and encapsulation resin within which the semiconductor chip and the chip tab are sealed. A horizontal surface area of the chip tab is smaller than that of the semiconductor chip, and a distance between a periphery of the chip tab and a periphery of the semiconductor chip is sufficient to cause stress exerted on the semiconductor chip by the encapsulation resin to be uniform across the horizontal surface area of the chip tab. | 09-20-2012 |
20120242414 | SEMICONDUCTOR INTEGRATED CIRCUIT AND RECEIVING APPARATUS - According to one embodiment, a semiconductor integrated circuit has a transconductance circuit, a first load circuit, and a second load circuit. The transconductance circuit has a first current generator configured to generate a first current depending on an input voltage, and a second current generator configured to generate a second current depending on the input voltage. The first load circuit has a first load configured to output a first output voltage depending on the first current from a first output terminal. The second load circuit has a second load configured to output a second output voltage depending on the second current from a second output terminal. At least one of the transconductance circuit, the first load circuit and the second load circuit comprises an impedance adjusting module configured to adjust impedance. | 09-27-2012 |
20120280755 | FLIP-CHIP POWER AMPLIFIER AND IMPEDANCE MATCHING NETWORK - Embodiments of circuits, apparatuses, and systems for a flip-chip power amplifier and impedance matching network are disclosed. Other embodiments may be described and claimed. | 11-08-2012 |
20130043954 | MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) INCLUDING AIR BRIDGE COUPLER - A monolithic microwave integrated circuit (MMIC) includes a transistor, coupled line and multiple air bridges. The coupled line is configured to output a coupled signal from the transistor, the coupled line running parallel to a drain of the transistor. The air bridges connect the drain of the transistor with a bond pad for outputting a transistor output signal, the bridges being arranged parallel to one another and extending over the coupled line. The air bridges and the coupled line effectively provide coupling of the transistor output signal to a load. | 02-21-2013 |
20130207732 | AMPLIFIER WITH REDUCED SOURCE DEGENERATION INDUCTANCE - Techniques for reducing undesired source degeneration inductance are disclosed. In an exemplary design, an apparatus includes first and second connections. The first connection includes a first parasitic inductance acting as a source degeneration inductance of an amplifier. The second connection includes a second parasitic inductance magnetically coupled to the first parasitic inductance to reduce the source degeneration inductance of the amplifier. The amplifier (e.g., a single-ended power amplifier) may be coupled to circuit ground via the first connection. An impedance matching circuit may be coupled to the amplifier and may include a circuit component coupled to circuit ground via the second connection. The first connection may be located sufficiently close to (e.g., within a predetermined distance of) the second connection in order to obtain the desired magnetic coupling between the first and second parasitic inductances. | 08-15-2013 |
20130257544 | WIRELESS COMMUNICATION SYSTEM - A wireless communication system includes: a filter; and a semiconductor chip including a signal processing integrated circuit having an amplifier, wherein a main surface of the semiconductor chip is provided with a plurality of electrode terminals along an edge portion thereof; wherein the amplifier has a transistor including a control electrode, a first electrode through which a signal is outputted, and a second electrode to which a voltage is applied; wherein the control electrode, the first electrode and the second electrode of the transistor are connected to the electrode terminals, respectively; and wherein none of wirings are arranged between the electrode terminals and placements of the control electrode, the first electrode and the second electrode, making space between the electrodes and the electrode terminals narrow. | 10-03-2013 |
20140015614 | System and Method for a Low Noise Amplifier - In accordance with an embodiment, a low noise amplifier (LNA) includes a transistor, and a transformer having a first winding coupled between a LNA input terminal and a control node of the transistor, and a second winding magnetically coupled to the first winding coupled between a reference node of the transistor and a LNA reference terminal. An output of the LNA is coupled to an output node of the transistor. | 01-16-2014 |
20140097907 | MICRO CMOS POWER AMPLIFIER - The present invention relates to a micro CMOS power amplifier, in which an output transformer is configured as a substrate of a multilayer structure, and an amplifier circuit module is stacked on the output transformer. The micro CMOS power amplifier includes: an amplifier circuit module chip configured by modularizing circuits for amplifying power as a module; and an output transformer for outputting output of the amplifier circuit module chip to outside through a transformer circuit, in which the output transformer is implemented on a multilayer substrate, and the amplifier circuit module chip and the output transformer are configured as a stack. | 04-10-2014 |
20140104004 | AMPLIFIER CIRCUITS - Radio Frequency (RF) amplifier circuits are disclosed which may exhibit improved video/instantaneous bandwidth performance compared to conventional circuits. For example, disclosed RF amplifier circuits may employ a baseband decoupling network connected in parallel with a low-pass RF matching network of the amplifier circuit. | 04-17-2014 |
20140266470 | TRANSFORMER-BASED POWER AMPLIFIER STABILIZATION AND REFERENCE DISTORTION REDUCTION - This disclosure relates generally to radio frequency (RF) amplification devices and methods of operating the same. In one embodiment, an RF amplification device includes an RF amplification circuit and a stabilizing transformer network. The RF amplification circuit defines an RF signal path and is configured to amplify an RF signal propagating in the RF signal path. The stabilizing transformer network is operably associated with the RF signal path defined by the RF amplification circuit. Furthermore, the stabilizing transformer network is configured to reduce parasitic coupling along the RF signal path of the RF amplification circuit as the RF signal propagates in the RF signal path. In this manner, the stabilizing transformer network allows for inexpensive components to be used to reduce parasitic coupling while allowing for smaller distances along the RF signal path. | 09-18-2014 |
20150077188 | VOLTAGE FOLLOWER AMPLIFIER - An amplifier circuit includes a first transistor, a second transistor, and a third transistor. The gate of the first transistor receives the input signal to the amplifier. The second transistor's drain terminal is connected to the first source terminal. The second transistor's source terminal is connected to a first supply node. The third transistor's gate terminal is connected to the first transistor's drain terminal via a first node. The third transistor's drain terminal is connected to a second supply node. The third transistor's source terminal is connected to the second transistor's gate terminal via a second node. The amplifier includes first current bias connected between the second node and the first supply node. The amplifier includes a second current bias connected between the first node and the second supply node. | 03-19-2015 |
20150116040 | AMPLIFIER - An amplifier includes a transistor chip, a matching chip with a capacitor group having multiple MIM capacitors, each of the MIM capacitors including a lower electrode, a dielectric, and an upper electrode, a bonding wire that electrically connects the transistor chip to the upper electrode of any one of the MIM capacitors of the capacitor group and transmits a high-frequency signal, and a case that accommodates the transistor chip and the matching chip. The lower electrodes of the MIM capacitors are grounded, and capacitance values of each of the MIM capacitors of the capacitor group are different from each other. | 04-30-2015 |
20150326181 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10 | 11-12-2015 |
20150326182 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10 | 11-12-2015 |
20150326183 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof. | 11-12-2015 |
20150380399 | DEVICES AND METHODOLOGIES RELATED TO STRUCTURES HAVING HBT AND FET - A semiconductor structure includes a heterojunction bipolar transistor (HBT) including a collector layer located over a substrate, the collector layer including a semiconductor material, and a field effect transistor (FET) located over the substrate, the FET having a channel formed in the semiconductor material that forms the collector layer of the HBT. In some implementations, a second FET can be provided so as to be located over the substrate and configured to include a channel formed in a semiconductor material that forms an emitter of the HBT. One or more of the foregoing features can be implemented in devices such as a die, a packaged module, and a wireless device. | 12-31-2015 |
20150381117 | RADIO FREQUENCY DEVICES WITH SURFACE-MOUNTABLE CAPACITORS FOR DECOUPLING AND METHODS THEREOF - An embodiment of a radio-frequency (RF) device includes at least one transistor, a package, and a surface-mountable capacitor. The package contains the at least one transistor and includes at least one termination. The surface-mountable capacitor is coupled in a shunt configuration between the at least one transistor and a power supply terminal of the device to decouple the at least one transistor from a power supply. | 12-31-2015 |
20160087588 | PACKAGED RF AMPLIFIER DEVICES WITH GROUNDED ISOLATION STRUCTURES AND METHODS OF MANUFACTURE THEREOF - An embodiment of a packaged RF amplifier device includes a device substrate, a transistor die coupled to the device substrate, and an isolation structure coupled to the transistor die. The transistor die has a top die surface, a bottom die surface, a semiconductor substrate, first and second transistors formed in the semiconductor substrate, a conductive structure at the top die surface and positioned between the first and second transistors, and a low resistance path that extends vertically through the semiconductor substrate between the conductive structure and the bottom die surface. The isolation structure is coupled to the conductive structure and extends into an area above the top die surface between the first and second transistors. The isolation structure may be a wirebond fence, a conductive wall, conductive pillars or vias, or a plated trench that extends vertically upward from the conductive structure. The device may be encapsulated with molding compound. | 03-24-2016 |
20160099684 | INTEGRATED POWER DEVICE WITH A METAL OXYNITRIDE ACTIVE CHANNEL FOR POWER SWITCHING AND MICROWAVE AMPLIFICATION - One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification. | 04-07-2016 |
20160134244 | HIGH-FREQUENCY AMPLIFIER - A high-frequency module, includes a circuit substrate, a first transistor having a source connected to ground; a second transistor forming a cascode circuit with the first transistor; a series circuit connected between a gate of the second transistor and the ground, the series circuit being formed by a first resistive element and a series resonant circuit connected in series with each other; and a second resistive element connected in parallel to the series circuit. The first transistor, the second transistor, the series circuit and the second resistive element are arranged on the circuit substrate. | 05-12-2016 |
20160142015 | HIGH FREQUENCY AMPLIFIER - A high frequency amplifier includes a high frequency amplifier transistor integrated in a first die of a first semiconductor technology and a matching circuit. The high frequency amplifier transistor has an input terminal, an output terminal and a reference terminal. The reference terminal is coupled to a reference potential. The matching circuit includes at least a first inductive bondwire, a second inductive bondwire and a capacitive element arranged in series with said inductive bondwires. The capacitive element is integrated in a second die of a second semiconductor technology different from the first semiconductor technology. The second semiconductor technology includes an isolating substrate for conductively isolating the capacitive element from a support attached at a first side to the second die. The capacitive element includes a first plate electrically coupled to a first bondpad of the second die and a second plate electrically coupled to a second bondpad of the second die. | 05-19-2016 |
20160142025 | INTEGRATED MATCHING CIRCUIT FOR A HIGH FREQUENCY AMPLIFIER - An integrated matching circuits for a high frequency amplifier transistor having an input terminal, an output terminal and a reference terminal. The reference terminal is coupled to a reference potential. The integrated matching circuit comprises an inductive element, and a capacitive element arranged in a series arrangement with the inductive element. The series arrangement has a first terminal end connected to the input terminal or to the output terminal and a second terminal end connected to the reference terminal. The first terminal end and the second terminal end are arranged at a same lateral side of the integrated matching circuit to obtain a geometry with the first terminal end adjacent to the input terminal or to the output terminal and the second terminal end adjacent to the reference terminal. | 05-19-2016 |
20160164478 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, AND MOBILE PHONE - A technique capable of maintaining the filter characteristics of a transmitting filter and a receiving filter by reducing the influences of heat from the power amplifier given to the transmitting filter and the receiving filter as small as possible in the case where the transmitting filter and the receiving filter are formed on the same semiconductor substrate together with the power amplifier in a mobile communication equipment typified by a mobile phone is provided. A high heat conductivity film HCF is provided on a passivation film PAS over the entire area of a semiconductor substrate | 06-09-2016 |
20160254791 | HIGH FREQUENCY SEMICONDUCTOR INTEGRATED CIRCUIT | 09-01-2016 |
20160380603 | FLIP-CHIP AMPLIFIER WITH TERMINATION CIRCUIT - Disclosed are devices and methods for improving power added efficiency and linearity of radio-frequency power amplifiers implemented in flip-chip configurations. In some embodiments, a harmonic termination circuit can be provided so as to be separate from an output matching network configured to provide impedance matching at a fundamental frequency. The harmonic termination circuit can be configured to terminate at a phase corresponding to a harmonic frequency of the power amplifier output. Such a configuration of separate fundamental matching network and harmonic termination circuit allows each to be tuned separately to thereby improve performance parameters such as power added efficiency and linearity. | 12-29-2016 |
20190149106 | OUTPUT CIRCUIT OF AMPLIFIER | 05-16-2019 |