| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 330289000 | Including temperature compensation means | 29 |
| 20080218270 | MULTI-MODE POWER AMPLIFIER WITH LOW GAIN VARIATION OVER TEMPERATURE - A multi-mode RF amplifier is described having at least a higher and a lower power path coupling an input to an output. At a pre-selected output power level, the higher power path is enabled while the lower power path is disabled when more output power is required. The process is reversed when less power is needed. The present invention matches the power gain variation over temperature characteristic of each path such that, especially at the cross over point, the gain delta (the difference in power gain between the two paths) has minimal variation over temperature. Such power gain characteristic is required for meeting the test requirements, specifically the inner loop power control, for third generation (3G) cellular handsets. | 09-11-2008 |
| 20080224781 | VARIABLE GAIN AMPLIFIERS - Variable gain amplifiers with controllable gain gradient over temperature. A variable gain amplification circuit comprises an input terminal receiving an input signal, an output terminal outputting an output signal, and a control terminal receiving a first gain control signal. The relationship between gain of the variable gain amplification circuit and temperature is programmable rather than temperature independent, and is controlled by the first gain control signal obtained by a second gain control signal and a third gain control signal. The second gain control controls gain of a variable gain amplification circuit linearly, the third gain control signal controls gain gradient of the variable gain amplification circuit over temperature and the third gain control signal is determined based on a formula of | 09-18-2008 |
| 20090009254 | CURRENT SENSE AMPLIFIER FOR VOLTAGE CONVERTER - A thermal calibration circuit for adjusting the gain of a variable gain amplifier, the thermal calibration circuit comprising an interface for receiving a signal that varies with temperature and for providing a signal related to the variation of the temperature; a variable gain amplifier having an input and an output; the signal related to the variation of the temperature being selectively coupled to the input; a circuit at the output of the variable gain amplifier for developing a first current proportional to a difference between a current developed at the output of the variable gain amplifier and a reference current; and the first circuit driving a further circuit to produce a gain control signal for adjusting the gain of the variable gain amplifier. | 01-08-2009 |
| 20090051439 | TRANSCONDUCTANCE SIGNAL CAPACITY FORMAT - Operational transconductance amplifiers have a natural signal capacity format in which signal performance can be expressed in terms of fixed percentages. Input signal can be applied to Operational transconductance amplifiers in this natural signal capacity format in order to optimize performance. A signal which drives a given Operational transconductance amplifier architecture to produce an output current which is at 50% of it's maximum available output current can be thought of as applying an input voltage which is at 50% of an Operational transconductance amplifier's maximum input voltage capacity. In this input/output channel capacity format, dc offset, distortion, and noise all are temperature independent. By translating input signal between a voltage format to a channel capacity format using the methods of this invention, output signal performance attributes such as gain, frequency response, dc offset, temperature drift, distortion, and noise, can all be optimize over the full temperature range for all types of Operational transconductance amplifier architectures and applications. | 02-26-2009 |
| 20090256637 | HIGH-FREQUENCY POWER AMPLIFIER AND COMMUNICATION DEVICE - It is an object of the present invention to provide a high-frequency power amplifier capable of improving the linearity at the time of high output by preventing decrease in power of bias supply transistor. The high-frequency power amplifier is a high-frequency power amplifier including high-frequency power amplifier transistors and connected in multiple stages and bias supply transistors and each of which supplies bias current to a base of a corresponding one of said high-frequency power amplifier transistors, and each of which is connected to a common power supply terminal which is further connected to a collector of the high-frequency power amplifier transistor at a first stage among said high-frequency power amplifier transistors, and a passive element connected between the common supply terminal and a collector of the corresponding one of said bias supply transistors connected to the high-frequency power amplifier transistor at the first stage. | 10-15-2009 |
| 20100134189 | RADIO FREQUENCY AMPLIFIER CIRCUIT AND MOBILE COMMUNICATION TERMINAL USING THE SAME - A bias circuit | 06-03-2010 |
| 20100141344 | REFERENCE BIAS GENERATING CIRCUIT - A reference current bias circuit includes a self-bias circuit configured to provide a bias current to an amplifier; a basic bandgap circuit coupled to inputs of the amplifier; a startup circuit configured to support an initial operation of the amplifier; a temperature compensator configured to include a first mirroring unit for mirroring current according to a positive temperature coefficient characteristic from the basic bandgap circuit; and a second mirroring unit for mirroring current according to a negative temperature coefficient characteristic from the basic bandgap circuit, and to provide a reference current by combining the current of the first mirroring unit and the current of the second mirroring unit; and a reference current mirroring unit configured to generate reference current biases based on the reference current from the temperature compensator. | 06-10-2010 |
| 20110304398 | CMOS POWER AMPLIFIER AND TEMPERATURE COMPENSATION CIRCUIT THEREOF - Disclosed is a CMOS power amplifier. A temperature compensation circuit of a CMOS power amplifier may include: a bias circuit unit supplying a gate bias voltage to a power amplification circuit part; a bias detection unit determining a class type of the power amplification circuit part according to the gate bias voltage; a temperature detection unit detecting a temperature-proportional voltage in proportion to ambient temperature; a temperature compensation control unit generating a compensation control value according to the temperature-proportion voltage in the class type determined by the bias detection unit; and a conversion unit converting the compensation control value of the temperature compensation control unit into a linear bias control value and providing the linear bias control value to the bias circuit unit, wherein the bias circuit unit compensates the gate bias voltage according to the linear bias control value of the conversion unit. | 12-15-2011 |
| 20120139638 | Methods and Circuits for Controlling Amplifier Gain Over Process, Voltage, and Temperature - A receiver includes an amplifier and a transconductance bias circuit. The amplifier gain is largely determined by transconductance and load impedance. The transconductance bias circuit varies the transconductance in inverse proportion to the load impedance to maintain the gain over process, voltage, and temperature. Differential amplifiers can use separate transconductance bias circuits for each amplifier leg, and the bias circuits can be independently controlled to minimize common-mode gain and voltage offsets. | 06-07-2012 |
| 20120280752 | EMBEDDED RF PA TEMPERATURE COMPENSATING BIAS TRANSISTOR - A radio frequency (RF) power amplifier (PA) amplifying transistor of an RF PA stage and an RF PA temperature compensating bias transistor of the RF PA stage are disclosed. The RF PA amplifying transistor includes a first array of amplifying transistor elements and a second array of amplifying transistor elements. The RF PA temperature compensating bias transistor provides temperature compensation of bias of the RF PA amplifying transistor. Further, the RF PA temperature compensating bias transistor is located between the first array and the second array. As such, the RF PA temperature compensating bias transistor is thermally coupled to the first array and the second array. The RF PA stage receives and amplifies an RF stage input signal to provide an RF stage output signal using the RF PA amplifying transistor. | 11-08-2012 |
| 20120313710 | PERFORMANCE OPTIMIZATION OF POWER AMPLIFIER - Aspects of embodiments according to the present invention are directed toward a circuitry and a method to accurately measure the junction temperature of power amplifier and uses the measurement to enable optimization of performance in the presence of a mismatched load via control of the power amplifier such that corrective action to mitigate effects of the mismatched load can be performed. | 12-13-2012 |
| 20130002358 | ELECTRONIC CIRCUITRY FOR HIGH-TEMPERATURE ENVIRONMENTS - A circuitry adapted to operate in a high-temperature environment of a turbine engine is provided. A relatively high-gain differential amplifier ( | 01-03-2013 |
| 20130249636 | CANCELATION OF GAIN CHANGE DUE TO AMPLIFIER SELF-HEATING - A system including a power amplifier having a first gain, a preamplifier having a second gain, a first temperature sensor configured to sense the temperature of the power amplifier, and a bias generator. The first gain is a function of a temperature of the power amplifier. The preamplifier receives an input signal, amplifies the input signal according to the second gain, and outputs an amplified signal to the power amplifier. The bias generator generates a biasing signal to bias the preamplifier and adjusts the second gain of the preamplifier by adjusting the biasing signal based on the temperature of the power amplifier and an ambient temperature. The adjusted second gain of the preamplifier compensates a change in the first gain of the power amplifier due to a change in the temperature of the power amplifier. | 09-26-2013 |
| 20130257540 | HIGH FREQUENCY AMPLIFIER - A high frequency amplifier is characterized wherein a power amplification element and at least one of temperature compensation elements are adjacently provided on a first semiconductor layer, a first wiring pattern connected to the power amplification element, a second wiring pattern connected to the temperature compensation element, and a ground electrode are provided on at least one of second semiconductor layers existing in layers different from the first semiconductor layer, and the ground electrode is formed on the second semiconductor layer corresponding to a region that substantially projects a crevice part on which the temperature compensation element and the power amplification element are provided, on the same plane as the first semiconductor element. | 10-03-2013 |
| 20130307626 | Silicon-on-Insulator High Power Amplifiers - Illustrative embodiments of power amplifiers and associated methods are disclosed. In at least one embodiment, a method may include fabricating a power amplifier in a first silicon layer of a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises the first silicon layer, a second silicon layer, and a buried oxide layer disposed between the first and second silicon layers; removing at least some of the second silicon layer from the SOI substrate, after fabricating the power amplifier; and securing the SOI substrate, after removing at least some of the second silicon layer, to an electrically non-conductive and thermally conductive substrate. | 11-21-2013 |
| 20140062600 | Temperature Compensation Circuit and Electronic Device With Temperature Compensation - A temperature compensation circuit is adapted to be used in an electronic device including a processing circuit. The temperature compensation circuit includes a thermistor, a compensation capacitor and a compensation diode. The thermistor has two ends, one of which is adapted to be electrically connected to the processing circuit. The compensation capacitor has two ends, one of which is electrically connected to the other one of the two ends of the thermistor. The compensation diode has an anode electrically connected to the other one of the two ends of the compensation capacitor, and a cathode to be grounded. The impedance of the thermistor varies with temperature so as to compensate and stabilize an output of the electronic device. | 03-06-2014 |
| 20140139291 | POWER AMPLIFIER - There is provided a power amplifier including a bias circuit unit generating a bias voltage of an amplifying unit, a voltage drop unit disposed between the bias circuit unit and the amplifying unit to drop the bias voltage to a base voltage, and a bypass circuit unit including an impedance element connected to the voltage drop unit in parallel and performing a switching operation according to a magnitude of an input signal. | 05-22-2014 |
| 20140197891 | INTEGRATED CIRCUIT CHIP TEMPERATURE SENSOR - A temperature control system having: a resistor formed in a region of a semiconductor, such resistor having a pair of spaced electrodes in ohmic contact with the semiconductor; at least one device formed in another region of the semiconductor thermally proximate the resistor formed region, such device generating heat in the semiconductor; and circuitry, including a reference connected to one of the pair of electrodes, for operating the resistor in saturation and for sensing variation in the resistor in response to the heat generated by the device and for controlling the heat generated by the device in the semiconductor in response to the sensed variation. | 07-17-2014 |
| 20140253243 | POWER AMPLIFYING MODULE - A power amplifying module includes a radio frequency amplifying circuit including an amplifying circuit configured to amplify an input signal and output an amplified signal, and a bias circuit of an emitter-follower type configured to bias the amplifying circuit to an operating point, and a constant voltage generating circuit configured to generate, from a first reference voltage, a first constant voltage applied to a base side of a transistor of the bias circuit and a second constant voltage applied to a collector side of the transistor. | 09-11-2014 |
| 20140320210 | POWER AMPLIFIER TRANSISTOR CHARACTERISTIC STABILIZATION DURING BIAS SWITCHING - Communications equipment including communications equipment for wireless communications may benefit from power amplifier transistors having stabilized characteristics. For example, certain power amplifier transistors may benefit from having their characteristics stabilized during bias switching. An apparatus can include a power amplifier device. The apparatus can also include a voltage or current input to the power amplifier device. An input voltage or current to the voltage or current input can be configured to be controlled according to scheduled transmission in a slot. The apparatus can also include a gate bias insertion circuit provided at the bias input. The gate bias insertion circuit can be configured to provide a reduced input voltage or current as a power amplifier bias. The reduced input voltage or current can be configured to correspond to a threshold of a transistor of the power amplifier when transmission is not scheduled in a slot. | 10-30-2014 |
| 20150048888 | ASSEMBLY STRUCTURE OF POWER AMPLIFIER - An assembly structure of a power amplifier is provided. The assembly structure comprises at least two power amplifier modules, each power amplifier module comprises a heat-conducting board, an amplifier tube matching circuit board is assembled on the heat-conducting board; at least one radio frequency power amplifier tube is assembled on the amplifier tube matching circuit board, assembly directions of all the radio frequency power amplifier tubes are parallel to each other; the heat-conducting boards of adjacent two power amplifier modules are connected vertically along a transmission direction of the radio frequency signal. Comparing with the existing plane assembly technology, the application has a character of needing small assembly areas, which is adapted in an assembly environment with a certain height and small assembly areas. | 02-19-2015 |
| 20150303881 | RADIO FREQUENCY POWER AMPLIFIER MODULE AND A RADIO FREQUENCY POWER AMPLIFIER PACKAGE - A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element. | 10-22-2015 |
| 20150303882 | DEVICES AND METHODS RELATED TO EMBEDDED SENSORS FOR DYNAMIC ERROR VECTOR MAGNITUDE CORRECTIONS - Devices and methods related to embedded sensors for dynamic error vector magnitude corrections. In some embodiments, a power amplifier (PA) can include a PA die and an amplification stage implemented on the PA die. The amplification stage can include an array of amplification transistors, with the array being configured to receive and amplify a radio-frequency (RF) signal. The PA can further include a sensor implemented on the PA die. The sensor can be positioned relative to the array of amplification transistors to allow sensing of an operating condition representative of at least some of the amplification transistors. The sensor can be substantially isolated from the RF signal. | 10-22-2015 |
| 20150349723 | HYBRID POWER AMPLIFIER HAVING ELECTRICAL AND THERMAL CONDUCTION PATH - A heterojunction bipolar transistor (HBT) hybrid type RF (radio frequency) power amplifier includes a first device including an input terminal for receiving an RF signal, a pre-driver stage for amplifying the received RF signal, and an output terminal, the input terminal, the pre-driver stage and the output terminal being disposed in or over a first substrate; and a second device having a main stage having an HBT amplifier circuit disposed in or over a second substrate to further amplify the RF signal amplified by the pre-driver stage. The RF signal further amplified by the main stage is output through the output terminal of the first device. | 12-03-2015 |
| 20160020734 | PSUEDO RESISTOR CIRCUIT AND CHARGE AMPLIFIER - A pseudo resistor circuit and a charge amplifier include a first field effect transistor; a second field effect transistor having electrical characteristics matched with electrical characteristics of the first field effect transistor; and a voltage dividing circuit with terminal of a reference resistor electrically connected to a source terminal of the second field effect transistor. Further, a first operational amplifier with an output terminal is connected to a gate terminal of the first field effect transistor and a gate terminal of the second field effect transistor and in which midpoint voltage of the voltage dividing circuit is input into either an inverting or non-inverting input terminal and reference voltage is input into the other of the inverting and non-inverting input terminal. Furthermore, a second operational amplifier supplies voltage resulting from inversion and amplification of drain voltage of the first field effect transistor into the other terminal of the resistor. | 01-21-2016 |
| 20160065144 | METHOD OF MANUFACTURING RF POWER AMPLIFIER MODULE, RF POWER AMPLIFIER MODULE, RF MODULE, AND BASE STATION - The present disclosure relates to a radio frequency (RF) unit of a base station, and more particularly, to a method of manufacturing an RF power amplifier module, an RF power amplifier module, an RF module, and a base station. The RF power amplifier module includes at least a power device, a power circuit board, a heat-dissipation substrate, and input/output ports. A power device die of the power device and the power circuit board are mounted on the heat-dissipation substrate. The power device die is connected to the power circuit board through packaging lead wires. In one exemplary embodiment, a heat-dissipation effect and manufacturing efficiency of the RF power amplifier module are improved and a cost of the RF power amplifier module is reduced. | 03-03-2016 |
| 20160065145 | AMPLIFIER MODULE WITH ENHANCED HEAT DISSIPATING FUNCTION AND SEMICONDUCTOR DEVICE - An amplifier module having a surface-mounting carrier with a base and lid is disclosed. The base in a top surface thereof provides a die pad on which a transistor is mounted, and a back surface thereof provides a back pad electrically and thermally connected to the die pad. The back pad has an area wider than the area of the die pad. The heat conduction from the transistor to the host board on which the amplifier module is mounted is effectively enhanced. | 03-03-2016 |
| 20160112013 | T-SHAPED POWER AMPLIFIER COOLING PLATE - Cooled electronic circuitry may include multiple and substantially parallel circuitry surfaces, each containing power amplifier circuitry, having a side edge, and includes material between at least a portion of the base plate and the side edge that provides a level of thermal conductivity of at least 167 W/m-k; and a cooling plate having a flat surface attached to each of the side edges of the circuitry surfaces in a thermally-conductive manner. | 04-21-2016 |
| 20180026583 | PHASE, AMPLITUDE AND GATE-BIAS OPTIMIZER FOR DOHERTY AMPLIFIER | 01-25-2018 |
