| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327583000 | Utilizing two electrode solid-state device | 13 |
| 20110084759 | HIGH IMPEDANCE BIAS NETWORK - This document discusses, among other things, a system and method for offsetting reverse-bias leakage of a high impedance bias network. In an example, an apparatus includes an anti-parallel diode pair coupled between a signal node and a common-mode node. The anti-parallel diode pair can include a first diode and a second diode coupled to the first diode. A third diode can be coupled between a supply node and the signal node, and the third diode can be sized to compensate for a parasitic diode junction of the anti-parallel diode pair. | 04-14-2011 |
| 20110181352 | Electrically Actuated Devices - An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. At least two dopants are present in a spatially varying region of the active region prior to device actuation. The at least two dopants have opposite conductivity types and different mobilities. | 07-28-2011 |
| 327584000 | Breakdown diode (e.g., zener diode, avalanche diode, etc.) | 2 |
| 20120075013 | Organic Zener Diode, Electronic Circuit, and Method for Operating an Organic Zener Diode - This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided. | 03-29-2012 |
| 20160093747 | Method of Controlling Breakdown Voltage of a Diode Having a Semiconductor Body - A diode includes a semiconductor body, a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, a base region arranged between the first and second emitter regions and having a lower doping concentration than the first and second emitter regions, a first emitter electrode electrically coupled to the first emitter region, a second emitter electrode in electrical contact with the second emitter region, a control electrode arrangement comprising a first control electrode section and a first dielectric layer arranged between the first control electrode section and the semiconductor body, and at least one pn junction extending to the first dielectric layer, or arranged distant to the first dielectric layer by less than 250 nm. The breakdown voltage of the diode is adjusted by applying a control potential to the first control electrode section. | 03-31-2016 |
| 327586000 | Capacitive diode | 5 |
| 20090091380 | DIFFERENTIAL VARACTOR USING GATED VARACTOR - Provided is a differential varactor using a gated varactor, which has a wider tuning range and a better linearity and minimum to maximum capacitance ratio than conventional PN-junction and MOS varactors. Thus, the differential varactor having a wider tuning range, and better linearity and common-mode rejection ratio may be implemented. | 04-09-2009 |
| 20090273394 | ADJUSTABLE CAPACITY DEVICE AND PROCESS THEREOF - The invention specifically concerns a device for varying the apparent level of a capacity, said device being characterized in that it compromises: —a dipole ( | 11-05-2009 |
| 20100090760 | Low-distortion voltage variable capacitor assemblies - An embodiment of the present invention provides an apparatus, comprising a first half cell comprising a circuit with two or more voltage variable capacitors (VVCs) configured in anti-series in which one or more of the two or more VVCs with the same bias voltage orientation as a signal voltage associated with the apparatus assume one capacitance and one or more of the two or more VVCs with the opposite bias voltage orientation as the signal voltage assume another capacitance, and a second half cell connected in parallel to the first half cell, comprising a circuit with two or more VVCs configured in anti series in which one or more of the two or more VVCs with the same bias voltage orientation as a signal voltage associated with the apparatus assume the same values as the anti-oriented VVCs in the first half cell and a one or more VVCs with the opposite bias voltage orientation as a signal voltage assume the same values as the like oriented VVCs in the first half cell. | 04-15-2010 |
| 20120223771 | TEMPERATURE COMPENSATION AND COARSE TUNE BANK SWITCHES IN A LOW PHASE NOISE VCO - The LC tank of a VCO includes a main varactor circuit and temperature compensation varactor circuit coupled in parallel with the main varactor circuit. The main varactor is used for fine tuning. The temperature compensation varactor circuit has a capacitance-voltage characteristic that differs from a capacitance-voltage characteristic of the main varactor circuit such that the effects of common mode noise across the two varactor circuits are minimized. The LC tank also has a plurality of switchable capacitor circuits provided for coarse tuning. To prevent breakdown of the main thin oxide switch in each of the switchable capacitor circuits, each switchable capacitor circuit has a capacitive voltage divider circuit that reduces the voltage across the main thin oxide switch when the main switch is off. | 09-06-2012 |
| 20120262229 | ON-CHIP CAPACITORS WITH A VARIABLE CAPACITANCE FOR A RADIOFREQUENCY INTEGRATED CIRCUIT - Methods of fabricating an on-chip capacitor with a variable capacitance, as well as methods of adjusting the capacitance of an on-chip capacitor and design structures for an on-chip capacitor. The method includes forming first and second ports configured to be powered with opposite polarities, first and second electrodes, and first and second voltage-controlled units. The method includes configuring the first voltage-controlled unit to selectively couple the first electrode with the first port, and the second voltage-controlled unit to selectively couple the second electrode with the second port. When the first electrode is coupled by the first voltage-controlled unit with the first port and the second electrode is coupled by the second voltage-controlled unit with the second port, the capacitance of the on-chip capacitor increases. | 10-18-2012 |
| 327587000 | Bridge circuit | 4 |
| 20080265986 | High-Speed Receiver Assembly - A high-speed receiver suitable for applications that desire a common-mode voltage range from approximately 0.7V to approximately 0.9V is arranged by coupling first and second differential pair circuit architectures based on first and second current-steering schemes into the same path to generate an output signal. The high-speed receiver includes first and second differential pair circuits. The first differential pair circuit is coupled to a first current-steering path via a first port and a second current-steering path via a second port. The second differential pair circuit is coupled to the first current-steering path via a third port and the second current-steering path via a fourth port. A bridge circuit is interposed between the first and second differential pair circuits. The bridge circuit integrates the first and second current-steering paths in a single-stage of the high-speed receiver assembly. | 10-30-2008 |
| 20090096518 | Matrix Converters - A matrix converter that can be used as part of a two-stage power converter has three ac three ac voltage lines AC | 04-16-2009 |
| 20100117725 | SEMICONDUCTOR DIODE - A semiconductor diode with integrated resistor has a semiconductor body with a front surface, a back surface and a diode structure with an anode electrode and a cathode electrode. A resistance layer arranged on the back surface of the semiconductor body provides the integrated resistor | 05-13-2010 |
| 20130033311 | Cell interface - The invention related in cell interface is a circuit of diode D1 to D4, comprises: a first terminal connected to positive voltage terminal of first cell E1; a second terminal connected to positive voltage terminal of second cell E2; and a third terminal connected to external positive terminal VP, the external negative voltage terminal VN connected to negative voltage terminal of first cell E1 and second cell E2, can be not occur loop current in parallel circuit. | 02-07-2013 |
