| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327581000 |
Field-effect transistor
| 69 |
| 327576000 |
Complementary transistors | 2 |
| 20080297242 | INTEGRATED CIRCUIT HAVING A MULTI-PURPOSE NODE CONFIGURED TO RECEIVE A THRESHOLD VOLTAGE AND TO PROVIDE A FAULT SIGNAL - An integrated circuit includes a monitor node adapted to receive a monitored signal. The integrated circuit also includes a multi-purpose node. The integrated circuit is adapted to receive and store a threshold presented at the multi-purpose node during a first time period. The integrated circuit is also adapted to output a fault signal from the multi-purpose node at a time after the predetermined time period. The fault signal is indicative of a relationship between the monitored signal and the threshold. With this arrangement, the multi-purpose node achieves at least two functions. | 12-04-2008 |
| 20110254620 | POWER INTERFACE CIRCUIT OF CONTACT IC CARD READER - A power interface circuit of a contact integrated circuit (IC) card reader is provided. The power interface circuit includes a power control unit configured to invert, amplify and output a power control signal supplied from the outside, a switching diode unit configured to control on and off operations of a ground terminal transistor in a complementary transistor unit in response to an output signal of the power control unit, the complementary transistor unit in which complementary transistors transfer a power supply terminal voltage to a power output unit or mute a card power supply terminal of the power output unit to a ground voltage level while operating inversely to each other in response to a control signal directly input from the power control unit and a control signal input through the switching diode unit, and the power output unit configured to output a voltage input through the complementary transistor unit to a card power supply terminal of an IC card or maintain the card power supply terminal at the ground voltage level in response to operation of the complementary transistor unit. | 10-20-2011 |
| 327582000 |
Four or more layer device (e.g., silicon-controlled rectifier, etc.) | 2 |
| 20110204970 | Electronic power-saving device - A single-phase electronic power-saving device includes at least one power-saving unit. The power-saving unit includes two ceramic piece capacitors, a safe capacitor, an inductor, a SCR, a first resistor, a second resistor, a live wire and a zero line; the two ceramic piece capacitors connected in series as a whole is connected in parallel with the safe capacitor to two terminals of which are connected the anode and the cathode of SCR, respectively; the anode of SCR is also connected to one terminal of the inductor, the branch composed of the first and the second resistors connected in series is connected in parallel so that one terminal of which is connected to one terminal of the inductor and the other is connected to the cathode of SCR; the gate of SCR is connected between the first and the second resistors. | 08-25-2011 |
| 20120133429 | Electronic Power-Saving Device - A single-phase electronic power-saving device includes at least one power-saving unit. The power-saving unit includes two ceramic piece capacitors, a safe capacitor, an inductor, a SCR, a first resistor, a second resistor, a live wire and a zero line; the two ceramic piece capacitors connected in series as a whole is connected in parallel with the safe capacitor to two terminals of which are connected the anode and the cathode of SCR, respectively; the anode of SCR is also connected to one terminal of the inductor, the branch composed of the first and the second resistors connected in series is connected in parallel so that one terminal of which is connected to one terminal of the inductor and the other is connected to the cathode of SCR; the gate of SCR is connected between the first and the second resistors. | 05-31-2012 |
| 327575000 |
Darlington connection | 1 |
| 20120319768 | Complementary Darlington Emitter Follower with Improved Switching Speed and Improved Cross-over Control and Increased Output Voltage - In one embodiment, an apparatus includes a first transistor where the base of the first transistor is coupled to an input node. A second transistor is provided where the emitter of the first transistor is coupled to the base of the second transistor and the emitter of the second transistor is coupled to an output node. A third transistor is provided where the base of the third transistor is coupled to the input node. A fourth transistor is provided where the emitter of the third transistor is coupled to the base of the fourth transistor and the emitter of the fourth transistor is coupled to the output node and the base of the second transistor is coupled to the base of the fourth transistor. The base of the second transistor is coupled to the base of the fourth transistor through a shorting link. | 12-20-2012 |
| 327580000 |
Transistor breakdown device (e.g., avalanche, zener, punch through, etc.) | 1 |
| 20130082768 | DIODE WITH CONTROLLABLE BREAKDOWN VOLTAGE - Disclosed is a diode. An embodiment of the diode includes a semiconductor body, a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, and a base region arranged between the first and second emitter regions and having a lower doping concentration than the first and second emitter regions. The diode further includes a first emitter electrode only electrically coupled to the first emitter region, a second emitter electrode in electrical contact with the second emitter region, and a control electrode arrangement including a first control electrode section, and a first dielectric layer arranged between the first control electrode section and the semiconductor body. At least one pn junction extends to the first dielectric layer or is arranged distant to the first dielectric layer by less than 250 nm. | 04-04-2013 |
| Entries |
| Document | Title | Date |
|---|
| 20090091379 | Active rectifier - In accordance with the present invention, the active rectifier is a circuit which directly takes the place of a passive rectifier by using a switching module (or simply a device in cases where a single device is used) controlled by a sensing circuit. Where passive devices have a single knee value determined by the physical properties of the semi-conductive material being used, the active circuit can be designed to a range of knee voltages and other performance criterion. Additional flexibility is available to the designer through the active rectifiers ability to allow for manipulation of the curve of response from the circuit in the knee region. Flexibility both in production, in designs, and in characteristics make the active rectifier highly valuable for engineering firms designing larger electronic circuits. | 04-09-2009 |
| 20090102547 | FLYBACK CURRENT CONTROL - One embodiment of the invention includes a power driver system. The power driver system comprises a power transistor that is activated to provide power to a load and a switching circuit configured to control the power transistor based on a control signal. The power driver system further comprises a control circuit configured to detect a flyback current from the load upon deactivation of the power transistor and to cause the switching circuit to steer the flyback current from a first flyback current path to a second flyback current path in response to detecting the flyback current path. The second flyback current path can have an impedance that is greater than the first flyback current path. | 04-23-2009 |
| 20100123517 | GATE-CONTROLLED RECTIFIER AND APPLICATION TO RECTIFICATION CIRCUITS THEREOF - Conventional diode rectifiers usually suffer from a higher conduction loss. The present invention discloses a gate-controlled rectifier, which comprises a line voltage polarity detection circuit, a constant voltage source, a driving circuit and a gate-controlled transistor. The line voltage polarity detection circuit detects the polarity of the line voltage and controls the driving circuit to turn on or turn off the gate-controlled transistor. The gate-controlled transistor may be a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a gate, a source and a drain or an Insulated Gate Bipolar Transistor (IGBT) with a gate, an emitter and a collector. The constant voltage source is provided or induced by external circuits and referred to the source of the MOSFET or the emitter of the IGBT. Thanks to a lower conduction loss, this gate-controlled rectifier can be applied to rectification circuits to increase the rectification efficiency. | 05-20-2010 |
| 20100214016 | Trench Device Structure and Fabrication - A vertical-current-flow device includes a trench which includes an insulated gate and which extends down into first-conductivity-type semiconductor material. A phosphosilicate glass layer is positioned above the insulated gate and a polysilicon layer is positioned above the polysilicate glass layer. Source and body diffusions of opposite conductivity types are positioned adjacent to a sidewall of the trench. A drift region is positioned to receive majority carriers which have been injected by the source, and which have passed through the body diffusion. A drain region is positioned to receive majority carriers which have passed through the drift region. The gate is capacitively coupled to control inversion of a portion of the body region. As an alternative, a dielectric layer may be used in place of the doped glass where permanent charge is positioned in the dielectric layer. | 08-26-2010 |
| 20110018624 | INTEGRATED POWER DETECTOR WITH TEMPERATURE COMPENSATION FOR FULLY-CLOSED LOOP CONTROL - An amplifier circuit comprises a detection power input circuit for receiving an RF signal, and a bias circuit that includes an output for generating a bias signal in response to a reference control voltage. The power detector further comprises a detection circuit for generating a power control voltage having a voltage characteristic that offsets temperature characteristics of the received RF signal. The amplifier circuit further comprises a power amplifier coupled to the bias circuit. The power amplifier includes a driver stage providing the RF signal. The detection circuit compensates temperature variation of the inputted detection voltage of the received RF signal. | 01-27-2011 |
| 20110109383 | MEMS VARACTORS - MEMS varactors capable of handling large signals and/or achieving a high capacitance tuning range are described. In an exemplary design, a MEMS varactor includes (i) a first bottom plate electrically coupled to a first terminal receiving an input signal, (ii) a second bottom plate electrically coupled to a second terminal receiving a DC voltage, and (iii) a top plate formed over the first and second bottom plates and electrically coupled to a third terminal. The DC voltage causes the top plate to mechanically move and vary the capacitance observed by the input signal. In another exemplary design, a MEMS varactor includes first, second and third plates formed on over one another and electrically coupled to first, second and third terminals, respectively. First and second DC voltages may be applied to the first and third terminals, respectively. An input signal may be passed between the first and second terminals. | 05-12-2011 |
| 20110210785 | CIRCUIT COMPRISING AT LEAST A FIRST TRANSISTOR GROUP AND A SECOND TRANSISTOR GROUP - A circuit including a first transistor group and a second transistor group. The transistor groups are connected such that they are arranged to be fed with at least one input signal, and such that they are arranged to output at least two currents. At least two transistors are arranged to be biased in such a way that desired signal paths are obtained in the circuit, such that a desired output current ratio is obtained. | 09-01-2011 |
| 20110309882 | Method and circuit for operating a power semiconductor component - Described is a method for operating a power semiconductor component. A power amplifier provided with a programmable logic is assigned to this power semiconductor component. In at least one embodiment, control signals for the power semiconductor component are transmitted to the power amplifier. The power semiconductor component is influenced by the power amplifier in dependence on these control signals. The type and manner in which the power semiconductor component is influenced is determined by the programming of the logic. The power amplifier can be sent programming signals which are then processed by a processor of the power amplifier. The programming of the logic is changed by the processor in dependence on the programming signals. | 12-22-2011 |
| 20120062315 | PLL CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME - A PLL circuit includes a phase detector, a loop filter (LF), a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares a phase of a signal Fs which is input from outside with a phase of a signal Fo/N which is input from the frequency divider. The loop filter generates a signal Vin by removing alternating current components from a signal input from the phase detector. The voltage-controlled oscillator outputs a signal Fo based on the signal Vin input from the loop filter. The frequency divider converts the signal Fo output from the voltage-controlled oscillator into Fo/N (frequency division by N), and outputs it to the phase detector. | 03-15-2012 |
| 20120188007 | Impedance-Matching Network Using BJT Switches in Variable-Reactance Circuits - This disclosure describes systems, methods, and apparatuses for impedance-matching radio frequency power transmitted from a radio frequency generator to a plasma load in a semiconductor processing chamber. Impedance-matching can be performed via a match network having a variable-reactance circuit. The variable-reactance circuit can comprise one or more reactive elements all connected to a first terminal and selectively shorted to a second terminal via a switch. The switch can comprise a bipolar junction transistor (BJT) or insulated gate bipolar transistor (IGBT) controlled via bias circuitry. In an on-state, the BJT base-emitter junction is forward biased, and AC is conducted between a collector terminal and a base terminal. Thus, AC passes through the BJT primarily from collector to base rather than from collector to emitter. Furthermore, the classic match network topology used with vacuum variable capacitors can be modified such that voltages do not overload the BJT's in the modified topology. | 07-26-2012 |
| 20120268200 | TRANSMISSION CHANNEL FOR ULTRASOUND APPLICATIONS - A transmission channel configured to transmit high-voltage pulses and to receive echoes of the high-voltage pulses includes a high voltage buffer, a voltage clamp and a switch. The voltage clamp may include clamping transistors and switching off transistors coupled together in series with body diodes in anti-series. The transmission channel may include a reset circuit configured to bias the transmission channel between pulses. The switch may include a bootstrap circuit. | 10-25-2012 |
| 20130033309 | POLY SILICON RESISTOR, REFERENCE VOLTAGE CIRCUIT COMPRISING THE SAME, AND MANUFACTURING METHOD OF POLY SILICON RESISTOR - The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polysilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated. | 02-07-2013 |
| 20130162347 | IDENTIFYING CIRCUIT - An identifying circuit is connected between a Universal Serial Bus (USB) interface and a controller. The identifying circuit includes first to fourth electronic switches. When a power adapter connects to the USB interface, the first and fourth electronic switches are not turned on, and the second and third electronic switches are turned on. An identification pin of the controller receives a low level signal and determines that the power adapter connects to the USB interface. When a computer connects to the USB interface, the first and fourth electronic switches are turned on, and the second and third electronic switches are not turned on. The identification pin receives a high level signal and determines that the computer is connected to the USB interface. | 06-27-2013 |
| 20130234790 | CONTROL CIRCUIT FOR POWER CONVERTER AND METHOD THEREOF - A control circuit for a power converter is disclosed, having a shared pin, a driving circuit, a current source, a sampling circuit, and a signal processing circuit. The shared pin is used for coupling with an output end of the power converter through a resistor. The driving circuit is used for conducting a switch of the power converter. The current source provides a current to the resistor through the shared pin. The sampling circuit samples the signal on the shared pin for generating a first sampling value and a second sampling value. When the difference between the first sampling value and the second sampling value is less than a predetermined value, the signal processing circuit configures the driving circuit to adjust at least one of the conduction time and the conduction frequency of the switch according to an output signal of the power converter received from the shared pin. | 09-12-2013 |
| 20130234791 | EQUIVALENT CIRCUIT OF SEMICONDUCTOR DEVICE, SIMULATION METHOD FOR SEMICONDUCTOR DEVICE, AND SIMULATION DEVICE FOR SEMICONDUCTOR DEVICE - An equivalent circuit includes: a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; a second transistor having a second gate electrode, a second drain electrode, and a second source electrode electrically connected to the first drain electrode; and a charging and discharging circuit which includes a first capacitor having a terminal electrically connected to the second gate electrode and another terminal electrically connected to the second source electrode, and charges and discharges the first capacitor with predetermined time constants. | 09-12-2013 |
| 20130342269 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) BUFFER - The present invention provides embodiments of an apparatus that includes a pad configurable for connection to a voltage source that provides a first voltage and a buffer connected to the pad. The buffer includes a plurality of transistors that have nominal breakdown voltages that are less than the first voltage. The buffer is configured to maintain voltage differentials on the plurality of transistors that are less than the break-down voltage of the plurality of transistors during pull-down of a pad voltage from the first voltage to a selected low voltage level or during pull-up of the pad voltage from the selected low voltage level to the first voltage. | 12-26-2013 |
| 20140022010 | CONTROL CIRCUIT FOR POWER CONVERTER AND METHOD THEREOF - A control circuit for a power converter includes a shared pin, a driving circuit, a current source, a sampling circuit, and a signal processing circuit. The shared pin is coupled with an output end of the power converter through a resistor. The driving circuit conducts a switch of the power converter. The current source provides a current to the resistor through the shared pin. The sampling circuit samples the signal on the shared pin for generating a first sampling value and a second sampling value. The signal processing circuit calculates a first difference between the first sampling value and a first reference value, and a second difference between the second sampling value and a second reference value. When the difference between the first difference and the second difference is less than a predetermined value, the signal processing circuit may therefore configure the conduction time or frequency of the switch. | 01-23-2014 |
| 20140300412 | Electronic safety device for a protection barrier - An electronic safety device for a protection barrier includes a transponder, a transceiver device for receiving a return signal from the transponder, the transponder being movable with respect to the transceiver and adapted to be placed at a current distance, an electric circuit which is switched when the distance is lower or higher than a reference distance and a control and switching system. The transceiver device processes the return signal to generate a control signal with an electric parameter variable in function of the distance. The control signal is a periodic signal with a frequency and has a first spectrum with a middle interval and a second spectrum with lateral intervals shifted with respect the middle interval when the distance is higher than the reference distance, the parameter being associated to a frequency value that comprises either into the middle interval or into one of the lateral intervals. | 10-09-2014 |
