Class / Patent application number | Description | Number of patent applications / Date published |
327514000 | Light | 13 |
20090058502 | OPTICAL SENSOR HAVING CURRENT AMPLIFIER, AND DISPLAY APPARATUS PROVIDED WITH THE OPTICAL SENSOR - An optical sensor includes a photoelectric converter to receive external light and to output a photocurrent signal according to the illuminance of the external light. A current-to-voltage converter converts the photocurrent signal output from the photoelectric converter to a voltage signal. A voltage amplifier amplifies the voltage signal. A current amplifier outputs a current signal corresponding to the voltage signal amplified by the voltage amplifier. Each of the photoelectric converter, current-to-voltage converter, voltage amplifier and current amplifier includes at least one thin-film transistor. | 03-05-2009 |
20090128224 | SEMICONDUCTOR DEVICE - A semiconductor device includes a light-receiving element which is connected to a negative power supply and generates conductive carriers by receiving light, an amplifier transistor which is a depletion transistor and amplifies an electrical signal obtained by the conductive carriers, and a transfer gate transistor which is a depletion transistor and is controlled by a negative potential applied to a gate to electrically connect or disconnect the light-receiving element and the amplifier transistor. | 05-21-2009 |
20090309648 | SINGLE PHOTON DETECTION WITH SELF-QUENCHING MULTIPLICATION - A photoelectronic device and an avalanche self-quenching process for a photoelectronic device are described. The photoelectronic device comprises a nanoscale semiconductor multiplication region and a nanoscale doped semiconductor quenching structure including a depletion region and an undepletion region. The photoelectronic device can act as a single photon detector or a single carrier multiplier. The avalanche self-quenching process allows electrical field reduction in the multiplication region by movement of the multiplication carriers, thus quenching the avalanche. | 12-17-2009 |
20100097122 | Photosensor Circuits Including a Switch Mode Power Converter - Photosensor circuits include a relay coil configured to control application of an alternating current (AC) power source to a load. The circuit includes a pulse width modulator circuit configured to generate a pulse width modulated signal having a pulse width that varies responsive to an average voltage across the relay coil. A drive transistor is coupled between the relay coil and a neutral bus that controls the average voltage across the relay coil responsive to the pulse width modulated signal. A photo control circuit is configured to control application of the pulse width modulated signal to the drive transistor responsive to a detected light level. A power circuit includes a half-wave rectifier coupled to the power source that is configured to provide a power signal to the pulse width modulator circuit and a regulated power signal to the photo control circuit. The power signal is a square wave and the power circuit further includes a rectifier circuit and a voltage divider circuit configured to generate the regulated power signal from the power signal. The photo control circuit includes a phototransistor. The phototransistor has a first terminal coupled to the regulated power signal through a first resistor and a second terminal that outputs a current responsive to a level of light detected by the phototransistor. A low pass filter circuit is coupled to the first terminal of the phototransistor that filters the output current of the phototransistor to provide a light level signal voltage and a select transistor couples the pulse width modulated signal to the drive transistor responsive to the light level signal voltage having a selected level. | 04-22-2010 |
20100201431 | Snapshot pixel circuit for sensors with high leakage current - Pixel circuits, capable of operating in either “snapshot” or “rolling integration” mode, and compatible with a conformal photodiode coating. Preferred embodiments of the present invention are compatible with these coating materials, as well as others, including amorphous Silicon. The preferred pixel circuits includes additional transistors not provided in prior art pixel circuits to divert leakage current away from integration nodes when not integrating, to reset the integration node, and to buffer and select the integrated voltage. | 08-12-2010 |
20100225380 | Implementing Tamper Resistant Integrated Circuit Chips - A method and tamper resistant circuit for resisting tampering including reverse engineering in a semiconductor chip, and a design structure on which the subject circuit resides are provided. A sensing device for detecting a chip tampering state is formed with the semiconductor chip including the circuitry to be protected. A tamper resistant control signal generator is coupled to the sensing unit for generating a tamper resistant control signal responsive to a detected chip tampering state. A functional operation inhibit circuit is coupled to the tamper resistant control signal generator for inhibiting functional operation of the circuitry to be protected responsive to the tamper resistant control signal. | 09-09-2010 |
20110074491 | PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE MATERIAL, PHOTOSENSOR AND IMAGING DEVICE - A photoelectric conversion device comprising an electrically conductive film, an organic photoelectric conversion film, and a transparent electrically conductive film, wherein the organic photoelectric conversion film contains a compound represented by the following formula (1) and an n-type organic semiconductor: | 03-31-2011 |
20110193616 | SEMICONDUCTOR INTEGRATED CIRCUIT AND DATA PROCESSING SYSTEM - An arrangement for detecting local light irradiation in an illegal attack attempt to intentionally induce a malfunction or faulty condition is formed on a small chip occupancy area so as to provide high detection sensitivity. In a region containing a logic circuit, a plurality of series-coupled detection inverters are distributively disposed as photodetector elements having a constant logical value of primary-stage input. When at least one of the series-coupled detection inverters is irradiated with light, an output thereof is inverted, thereby producing a final output through the series-coupled detection inverters. Based on the final output thus produced, local light irradiation can be detected. | 08-11-2011 |
20110234302 | PROXIMITY SENSOR USING PHOTOSENSOR - Provided is a proximity sensor using a photosensor, which is easy to use and reduced in power consumption. In the proximity sensor, a first photosensor is used to detect a change in amount of ambient light entering the first photosensor, which is caused when a finger is coming close thereto, and a detection signal is output based on a result of the detection. The photosensor includes, for example, one or a plurality of PN junction elements connected in parallel. | 09-29-2011 |
20120182063 | Power Device Using Photoelectron Injection to Modulate Conductivity and the Method Thereof - The present invention belongs to the technical field of semiconductor devices, and discloses a power device using photoelectron injection to modulate conductivity and the method thereof. The power device comprises at least one photoelectron injection light source and a power MOS transistor. The present invention uses photoelectron injection method to inject carriers to the drift region under the gate of the power MOS transistor, thus modulating the conductivity and further decreasing the specific on-resistance of the power MOS transistor. Moreover, as the doping concentration of the drift region can be decreased and the blocking voltage can be increased, the performance of the power MOS transistor can be greatly improved and the application of power MOS transistor can be expanded to high-voltage fields. | 07-19-2012 |
20130043928 | MOTION SENSING SWITCH - Disclosed is a motion detection switch, and more particularly a motion detection switch which can recognize motion of a reflector moved at an upper side of a display part of a mobile phone, and can control the mobile phone without any touching operation. The motion detection switch recognizes motion of a reflection body moved at an upper side of a display part of a portable terminal and controls the portable terminal, including a base which is disposed at an upper side of a main body of the portable terminal having the display part, which is outside the display part; a light receiving device which is disposed at the base; a plurality of light emitting devices which are disposed at the base so as to be symmetric with respect to the light receiving device; and a control device which operates the light emitting devices. | 02-21-2013 |
20130076430 | Semiconductor Integrated Circuit and Data Processing System - An arrangement for detecting local light irradiation in an illegal attack attempt to intentionally induce a malfunction or faulty condition is formed on a small chip occupancy area so as to provide high detection sensitivity. In a region containing a logic circuit, a plurality of series-coupled detection inverters are distributively disposed as photodetector elements having a constant logical value of primary-stage input. When at least one of the series-coupled detection inverters is irradiated with light, an output thereof is inverted, thereby producing a final output through the series-coupled detection inverters. Based on the final output thus produced, local light irradiation can be detected. | 03-28-2013 |
20170237429 | PHOTOCOUPLER ISOLATION SWITCH CIRCUIT | 08-17-2017 |