| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327493000 | Utilizing two electrode solid-state device | 18 |
| 20090121777 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, POWER CONTROL DEVICE, AND ELECTRONIC EQUIPMENT AND MODULE - A semiconductor device of the invention for miniaturizing and cost reduction includes: a solid-state relay | 05-14-2009 |
| 20090251199 | Switching Element - A switching element | 10-08-2009 |
| 20100097120 | Electronic Switching Device for High-Frequency Signals - The invention relates to an electronic switching device for high-frequency signals. The invention is of particular use in the connection between a microwave frequency antenna and an electronic circuit. This circuit comprises one or two access points designed to be connected to the antenna forming a third access point. In the case of a switch between one access point and the antenna (called an SPST switch), it comprises two switching diodes, one, called a serial diode, being connected in series between the access points and the other, called a shunt diode, between one of the access points and an earth of the device. According to the invention, a first transmission line is placed in series with the shunt diode, a second transmission line is placed in series with the serial diode, a third transmission line is placed at the common point of the first transmission line and of the shunt diode, a fourth transmission line is placed at the first access point, and a fifth transmission line is placed at the second access point. For a switch with three access points, two other diodes and four other transmission lines are added in a symmetrical manner relative to those already described. It is possible to obtain adapted lines having lengths much shorter than λ/4, which makes it possible to improve the compactness of the device while increasing its bandwidth. | 04-22-2010 |
| 20110057717 | TWO-TERMINAL NANOTUBE DEVICES INCLUDING A NANOTUBE BRIDGE AND METHODS OF MAKING SAME - Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed. | 03-10-2011 |
| 20110095810 | Linkage apparatus of AC two-wire solid-state switches - This invention is based on the contents of the U.S. Pat. No. 5,831,349 and Chinese Invention Patent ZL94112284.0, ZL94114032.6 as their follow-up invention. The invention involves the technical schemes of several linkage apparatuses of AC two-wire solid-state switches. All of the AC two-wire solid-state switches of the linkage apparatuses must be the non-contact ON-OFF in the main circuits of the AC two-wire solid-state switches of the said three patents. This invention is intended to combine several or multiple the AC two-wire solid-state switches into linkage apparatus so that all of the said switches have consistently-combined ON-OFF actions, so that the application range of the AC two-wire solid-state switches is expanded from the single-phase circuit to three-phase circuit, from the low-voltage power grid to the high-voltage power grid. | 04-28-2011 |
| 20110115546 | SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING CIRCUIT FOR DRIVING ELECTROSTATIC ACTUATOR, MICRO-ELECTRO-MECHANICAL SYSTEMS, AND DRIVING METHOD OF ELECTROSTATIC ACTUATOR - A semiconductor integrated circuit comprises an electrostatic actuator, an estimation circuit, a storage circuit and a bias circuit. The electrostatic actuator has a top electrode, a bottom electrode, and an insulating film disposed between the top electrode and the bottom electrode. The estimation circuit estimates the amount of a charge accumulated in the insulating film of the electrostatic actuator. The storage circuit stores a result of the estimation of the charge amount by the estimation circuit. The bias circuit changes, on the basis of the estimation result stored in the storage circuit, a drive voltage to drive the electrostatic actuator. | 05-19-2011 |
| 20110210782 | Integrated Circuit with a Radiation-Sensitive Thyristor Structure - An integrated circuit comprises a circuit used for storing or processing data and a radiation-sensitive thyristor structure configured to conditionally short two power supply terminals of the integrated circuit. The thyristor structure is configured to turn on in response to a region of the thyristor structure being irradiated with radiation to which the thyristor structure is sensitive, in order to establish an electrically conductive connection between a first power supply terminal of the power supply terminals of the integrated circuit and a second power supply terminal of the power supply terminals of the integrated circuit. The thyristor structure is further configured so that a power density of the radiation needed for turning on the thyristor structure is lower than a power density of the radiation needed for a change of data of the circuit used for storing or processing data. | 09-01-2011 |
| 20110260777 | MONOLITHIC INTEGRATED CIRCUIT - A field-effect semiconductor device such as a HEMT or MESFET is monolithically integrated with a Schottky diode for feedback, regeneration, or protection purposes. The field-effect semiconductor device includes a main semiconductor region having formed thereon a source, a drain, and a gate between the source and the drain. Also formed on the main semiconductor region, preferably between gate and drain, is a Schottky electrode electrically coupled to the source. The Schottky electrode provides a Schottky diode in combination with the main semiconductor region. A current flow is assured from Schottky electrode to drain without interruption by a depletion region expanding from the gate. | 10-27-2011 |
| 20120119818 | THREE-POLE THREE-THROW SWITCH AND COMMUNICATION DEVICE - A three-pole three-throw switch and a communication device employing the three-pole three-throw switch includes six diodes and six inductors. The six diodes are connected in series with a same direction. Common nodes of each two diodes form three poles and three throws. The three poles and the three throws are linked together in circular form. The three poles and the three throws receive control signals via the six inductor, respectively. | 05-17-2012 |
| 20130321064 | HIERARCHICAL SINGLE MOLECULE SWITCH BASED ON STIMULATED INTERNAL CLUSTER MOTION WITHIN A HOLLOW MOLECULAR CAGE - Systems and methods related to single molecule switching devices are disclosed. One example method can include the step of applying a tunneling current across a tunneling junction. The tunneling junction can include an endohedral fullerene that includes a fullerene cage and a trapped cluster or a trapped atom. Such a method can also include exciting one or more internal motions of the trapped cluster or the trapped atom based at least in part on the tunneling current, and changing the conductance of the endohedral fullerene based at least in part on the one or more excited internal motions. One or more electronic processes can be controlled based at least in part on the changed conductance of the endohedral fullerene. | 12-05-2013 |
| 20140266403 | Low Loss Electronic Devices Having Increased Doping for Reduced Resistance and Methods of Forming the Same - An electronic device includes a drift region having a first conductivity type and a grid including a plurality of doped regions formed in the drift region and having a second conductivity type. The doped regions have a dopant concentration greater than 2.2×10 | 09-18-2014 |
| 327498000 | Negative resistance | 1 |
| 327499000 | "N"-shape curve on I-V plot (e.g., tunnel diode type, etc.) | 1 |
| 20140091856 | 2-TERMINAL SWITCHING DEVICE - A two-terminal switching device includes a resistive switching element, a diode, and a resistive circuit. The resistive switching element switches between low and high resistance states based on a switching signal and maintain a switched resistance state until another switching signal is received. The diode is connected to the resistive switching element and blocks the switching signal from being transmitted to an output terminal. The resistive circuit allows the switching signal blocked by the diode to flow to the reference potential. | 04-03-2014 |
| 327502000 | Breakdown characteristic (e.g., zener diode, etc.) | 1 |
| 20100271108 | GEIGER-MODE PHOTODIODE WITH INTEGRATED AND JFET-EFFECT-ADJUSTABLE QUENCHING RESISTOR, PHOTODIODE ARRAY, AND CORRESPONDING MANUFACTURING METHOD - An embodiment of a Geiger-mode avalanche photodiode, having: a body made of semiconductor material of a first type of conductivity, provided with a first surface and a second surface and forming a cathode region; and an anode region of a second type of conductivity, extending inside the body on top of the cathode region and facing the first surface. The photodiode moreover has: a buried region of the second type of conductivity, extending inside the body and surrounding an internal region of the body, which extends underneath the anode region and includes the internal region and defines a vertical quenching resistor; a sinker region extending through the body starting from the first surface and in direct contact with the buried region; and a contact region made of conductive material, overlying the first surface and in direct contact with the sinker region. | 10-28-2010 |
| 327503000 | PIN diode | 1 |
| 20160155552 | COIL FOR A SWITCHING DEVICE WITH A HIGH-FREQUENCY POWER | 06-02-2016 |
| 327504000 | PN junction diode | 4 |
| 20080278216 | Modular Switching Arrangement - The present invention relates to a switching arrangement and method of manufacturing such an arrangement, wherein first and second series-shunt diode structures (D | 11-13-2008 |
| 20090189680 | VOLTAGE-CONTROLLED SEMICONDUCTOR INDUCTOR AND METHOD - A voltage-controlled semiconductor inductor and method is provided. According to various embodiments, the voltage-controlled inductor includes a conductor configured with a number of inductive coils. The inductor also includes a semiconductor material having a contact with at least a portion of at least one of the coils. The semiconductor material is doped to form a diode with a first doped region of first conductivity type, a second doped region of second conductivity type, and a depletion region. A voltage across the diode changes lengths of the first doped region, the second doped region and the depletion region, and adjacent coils in contact with at least one of the doped regions are electrically shorted, thereby varying the inductance of the inductor. In various embodiments, the inductor is electrically connected to a resistor and a capacitor to provide a tunable RLC circuit. Other aspects and embodiments are provided herein. | 07-30-2009 |
| 20120274389 | JUNCTION BOX - A junction box electronically connected to a solar panel and connected to a plurality of solar cell strings connected in series includes a first bypass diode string and at least one second bypass diode. The first bypass diode string includes a plurality of first bypass diodes forwardly connected in series, and each of the plurality of first bypass diodes is connected to a corresponding one of the plurality of solar cell strings in parallel. The at least one second bypass diode connected to at least two neighboring solar cell strings in parallel, turns on to bypass the at least two neighboring solar cell strings upon the condition that the at least two neighboring solar cell strings are abnormal simultaneously. | 11-01-2012 |
| 20140340139 | CIRCUIT WITH A PLURALITY OF DIODES AND METHOD FOR CONTROLLING SUCH A CIRCUIT - A circuit includes a diode circuit and a deactivation circuit. The diode circuit includes a first terminal, a second terminal, and a plurality of diodes coupled in parallel between the first terminal and the second terminal. The diode circuit is configured to be forward biased in an on-time and reverse biased in an off-time. The deactivation circuit is configured to switch a first group of the diodes into a deactivation state at a time instant before the end of the on-time, the first group of diodes including one or more but less than all of the diodes included in the diode circuit. | 11-20-2014 |
