| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327438000 | Four or more layer device (e.g., thyristor, etc.) | 21 |
| 20100001783 | THREE-TERMINAL POWER DEVICE WITH HIGH SWITCHING SPEED AND MANUFACTURING PROCESS - An embodiment of a power device having a first current-conduction terminal, a second current-conduction terminal, a control terminal receiving, in use, a control voltage of the power device, and a thyristor device and a first insulated-gate switch device connected in series between the first and the second conduction terminals; the first insulated-gate switch device has a gate terminal connected to the control terminal, and the thyristor device has a base terminal. The power device is further provided with: a second insulated-gate switch device, connected between the first current-conduction terminal and the base terminal of the thyristor device, and having a respective gate terminal connected to the control terminal; and a Zener diode, connected between the base terminal of the thyristor device and the second current-conduction terminal so as to enable extraction of current from the base terminal in a given operating condition. | 01-07-2010 |
| 20120326766 | Silicon Controlled Rectifier with Stress-Enhanced Adjustable Trigger Voltage - Device structures, fabrication methods, operating methods, and design structures for a silicon controlled rectifier. The method includes applying a mechanical stress to a region of a silicon controlled rectifier (SCR) at a level sufficient to modulate a trigger current of the SCR. The device and design structures include a SCR with an anode, a cathode, a first region, and a second region of opposite conductivity type to the first region. The first and second regions of the SCR are disposed in a current-carrying path between the anode and cathode of the SCR. A layer is positioned on a top surface of a semiconductor substrate relative to the first region and configured to cause a mechanical stress in the first region of the SCR at a level sufficient to modulate a trigger current of the SCR. | 12-27-2012 |
| 20130049843 | REVERSE CONDUCTION MODE SELF TURN-OFF GATE DRIVER - There is provided a power electronic module that includes a power switch module and a drive circuit operatively coupled to the power switch module. The drive circuit is configured to enable and disable a forward conduction mode operation of the switch module. The drive circuit disables forward conduction mode operation of the power switch module when the power switch module is operating in reverse conduction mode. | 02-28-2013 |
| 20130229223 | Tunable Fin-SCR for Robust ESD Protection - One embodiment of the present invention relates to a silicon-controlled-rectifier (SCR). The SCR includes a longitudinal silicon fin extending between an anode and a cathode and including a junction region there between. One or more first transverse fins traverses the longitudinal fin at one or more respective tapping points positioned between the anode and the junction region. Other devices and methods are also disclosed. | 09-05-2013 |
| 20140375377 | THYRISTOR, A METHOD OF TRIGGERING A THYRISTOR, AND THYRISTOR CIRCUITS - A thyristor is disclosed comprising: a first region of a first conductivity type; a second region of a second conductivity type and adjoining the first region; a third region of the first conductivity type and adjoining the second region; a fourth region of the second conductivity type and comprising a first segment and a second segment separate from the first segment, the first segment and second segment each adjoining the third region; a first contact adjoining the first region; a second contact adjoining the first segment; and a trigger contact adjoining the second segment and separate from the second contact. | 12-25-2014 |
| 20150035587 | SEMICONDUCTOR DEVICE AND OPERATING METHOD FOR THE SAME - A semiconductor device and an operating method for the same are provided. The semiconductor device includes a first doped region, a second doped region, a first doped contact, a second doped contact, a first doped layer, a third doped contact and a first gate structure. The first doped contact and the second doped contact are on the first doped region. The first doped contact and the second doped contact has a first PN junction therebetween. The first doped layer is under the first or second doped contact. The first doped layer and the first or second doped contact has a second PN junction therebetween. The second PN junction is adjoined with the first PN junction. | 02-05-2015 |
| 20150365086 | High-voltage, high-current, solid-state closing switch - A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications. | 12-17-2015 |
| 327439000 | Bipolar transistor circuit configuring SCR device | 2 |
| 20130241628 | METHODS AND SYSTEMS FOR IMPLEMENTING AN SCR TOPOLOGY IN A HIGH VOLTAGE SWITCHING CIRCUIT - In accordance with an embodiment, a high voltage switching and control circuit for an implantable medical device (IMD) is provided that comprises a high voltage positive (HVP) node configured to receive a positive high voltage signal from a high energy storage source; and a high voltage negative (HVN) node configured to receive a negative high voltage signal from a high energy storage source. First and second output terminals are configured to be connected to electrodes for delivering high voltage energy. First and second Silicon Controlled Rectifiers (SCR) switches are connected to the HVP node, the first and second SCR switches connected to the first and second output terminals respectively, wherein the first and second SCR switches each include a Darlington transistor pair having a first transistor stage joined to a second stage transistor at a common collector node. | 09-19-2013 |
| 20150077171 | SWITCH - A switch includes a first switching member and a latch circuit. A first terminal of the first switching member is electrically connected to a power source, while a second terminal thereof is electrically connected to a loading. The latch circuit includes a first transistor and a second transistor which are mutually electrically connected. The first transistor is electrically connected to the first terminal, and the second transistor is electrically connected to the control terminal. By inputting a trigger voltage to the second transistor, the second transistor and the first switching member are conducted, which makes the first transistor become conductive. After the first transistor becoming conductive, the first transistor provides electricity to the second transistor to cause latching effect, and to consequently keep the first switching member conductive. | 03-19-2015 |
| 327440000 | GTO (i.e., gate turnoff) | 5 |
| 20090096503 | SEMICONDUCTOR DEVICE COMPRISING A HOUSING CONTAINING A TRIGGERING UNIT - A housing for a semiconductor device is disclosed. In an exemplary embodiment of the present invention, the housing comprises a semiconductor substrate that is arranged between two contact elements, one contact element forming an anode contact element and another contact element forming a cathode contact element, the semiconductor substrate having, on at least one surface, a gate electrode that is contacted by a gate contact element, the first contact element forming a surface arranged across from the gate electrode and at a distance from the gate electrode. Also included is at least one driver unit for generating a gate current, the driver unit comprising a first terminal that is contacted with the gate contact element, and a second terminal that is contacted with a first of the two contact elements. A housing according to an exemplary embodiment of the present invention additionally comprises a spring element arranged so that a spring force brings the gate contact element into pressure contact with the gate electrode and, at substantially the same time, the spring force brings the second terminal of the driver unit into pressure contact with the surface of the first contact element that is located across from the gate electrode. | 04-16-2009 |
| 20100283529 | WIDE BANDGAP BIPOLAR TURN-OFF THYRISTOR HAVING NON-NEGATIVE TEMPERATURE COEFFICIENT AND RELATED CONTROL CIRCUITS - An electronic device includes a wide bandgap thyristor having an anode, a cathode, and a gate terminal, and a wide bandgap bipolar transistor having a base, a collector, and an emitter terminal. The emitter terminal of the bipolar transistor is directly coupled to the anode terminal of the thyristor such that the bipolar transistor and the thyristor are connected in series. The bipolar transistor and the thyristor define a wide bandgap bipolar power switching device that is configured to switch between a nonconducting state and a conducting state that allows current flow between a first main terminal corresponding to the collector terminal of the bipolar transistor and a second main terminal corresponding to the cathode terminal of the thyristor responsive to application of a first control signal to the base terminal of the bipolar transistor and responsive to application of a second control signal to the gate terminal of the thyristor. Related control circuits are also discussed. | 11-11-2010 |
| 20110241757 | THYRISTOR GATE PULSES IN STATIC VAR COMPENSATOR - A method of controlling a static VAR compensator includes providing a static VAR compensator having a reactive component and a thyristor for switching the reactive component into and out of a power distribution network; monitoring a periodic waveform on the power distribution network and controlling operation of the thyristor on the basis of the harmonic frequency content of the waveform. | 10-06-2011 |
| 20140091855 | DUAL DEPTH TRENCH-GATED MOS-CONTROLLED THYRISTOR WITH WELL-DEFINED TURN-ON CHARACTERISTICS - An insulated gate turn-off thyristor has a layered structure including a p+ layer (e.g., a substrate), an n− layer, a p-well, vertical insulated gate regions formed in the p-well, and n+ regions between the gate regions, so that vertical NPN and PNP transistors are formed. Some of the gate regions are first gate regions that only extend into the p-well, and other ones of the gate regions are second gate regions that extend through the p-well and into the n− layer to create a vertical conducting channel when biased. The second gate regions increase the beta of the PNP transistor. When the first gate regions are biased, the base of the NPN transistor is narrowed to increase its beta. When the product of the betas exceeds one, controlled latch-up of the thyristor is initiated. The distributed second gate regions lower the minimum gate voltage needed to turn on the thyristor. | 04-03-2014 |
| 20140312959 | CURRENT SWITCHING DEVICE WITH IGCT - An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate zcircuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGR | 10-23-2014 |
| 327444000 | Complex wave supply | 1 |
| 327445000 | Silicon controlled rectifier (SCR) | 1 |
| 327446000 | Triac | 1 |
| 20130120049 | Power Switch - A power switch includes first and second MOS transistors in series between first and second nodes. Both the first and second transistors have a gate coupled to its substrate. First and second resistive elements are coupled between the gate of the first transistor and the first node, and between the gate of the second transistor and the second node, respectively. A triac is coupled between the first and second nodes. The gate of the triac is coupled to a third node common to the first and second transistors. A third MOS transistor has a first conduction electrode coupled to the gate of the first transistor and a second conduction electrode coupled to the gate of the second transistor. | 05-16-2013 |
| 327447000 | AC supply | 3 |
| 20090015315 | CIRCUIT FOR CONTROLLING AN A.C. SWITCH - A circuit for generating a D.C. signal for controlling an A.C. switch referenced to a first potential, from a high-frequency signal referenced to a second potential, including: a first capacitive element connecting a first input terminal, intended to receive the high-frequency signal, to the cathode of a rectifying element having its anode connected to a first output terminal intended to be connected to a control terminal of the switch; and a second capacitive element connecting a second input terminal, intended to be connected to the second reference potential, to a second output terminal intended to be connected to the first reference potential, a second rectifying element connecting the cathode of the first rectifying element to the second output terminal. | 01-15-2009 |
| 327451000 | Zero point switching | 1 |
| 327452000 | With triac | 1 |
| 20150116026 | VOLTAGE ADAPTER SYSTEMS FOR USE IN AN APPLIANCE - Voltage adapter systems for use in an appliance are provided. An exemplary voltage adapter system can include a TRIAC. The exemplary voltage adapter system can include a voltage detection circuit configured to detect an input voltage of an alternating current power signal and connect the TRIAC in series with a load of the appliance when the input voltage is greater than a threshold voltage. The exemplary voltage adapter system can include a firing angle control circuit configured to provide a gate signal to a gate of the TRIAC when the alternating current power signal reaches a phase angle. An exemplary firing angle control circuit can include a resistor, a capacitor, and a DIAC. The exemplary firing angle control circuit can be configured to trigger the TRIAC when the voltage across the capacitor exceeds a breakover voltage associated with the DIAC | 04-30-2015 |
| 327453000 | Silicon controlled rectifier (SCR) | 1 |
| 20160065209 | Rapid Cutoff Device and Operation Method for SCR AC Switches - A rapid cutoff device includes a thyristor AC switch for supplying an AC current from a first AC circuit to a second AC circuit. A serially-connected circuit of a first switch and a first capacitor parallel-connects with the first AC circuit. A serially-connected circuit of a second switch and a second capacitor parallel-connects with the second AC circuit. When cutting off the thyristor AC switch, the first switch is operated to conduct the first capacitor in a first direction for the AC current charging to the first capacitor, alternatively, the second switch is operated to conduct the second capacitor in a second direction for the AC current charging to the second capacitor, thereby lowering a current in the thyristor AC switch approaching a zero value and thus rapidly cutting off it. | 03-03-2016 |
| 327465000 | DC supply | 3 |
| 20100039161 | METHOD OF CONTROLLING A RECTIFYING BRIDGE AND A CIRCUIT FOR THE CONTROL - A circuit for controlling a thyristor (V | 02-18-2010 |
| 20100039162 | METHOD OF CONTROLLING A RECTIFYING BRIDGE IN A DIODE MODE AND A CIRCUIT FOR THE CONTROL - A method and a circuit for controlling a thyristor (V | 02-18-2010 |
| 327470000 | Plural devices | 1 |
| 327473000 | Parallel connection | 1 |
| 20160056820 | Rapid Cutoff Device and Operation Method for SCR DC Switches - A rapid cutoff device includes a thyristor DC switch, a switch and a capacitor. An operation method includes: connecting the thyristor DC switch between a first DC circuit and a second DC circuit; serially connecting the switch and the capacitor which further parallel connects the first DC circuit; when the thyristor DC switch is conducted, supplying a DC current via the thyristor DC switch; when a drive signal of the thyristor DC switch stops, operating the switch to conduct the capacitor which is charged by the first DC circuit to rapidly lower a current of the thyristor DC switch approaching a zero value, thereby rapidly cutting of the thyristor DC switch. | 02-25-2016 |
