| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327430000 | JFET (i.e., junction field-effect transistor) | 22 |
| 20090009232 | Power Switches - A switching device suitable for operation in temperatures over 150 C comprises first 1 and second 2 transistors, the source | 01-08-2009 |
| 20090184747 | Switch circuit - There has been a problem that the distortion characteristic of a switch circuit for a high frequency is deteriorated. A switch circuit in accordance with one aspect of the present invention includes a transistor connected in series between input and output terminals, a control terminal that receives a signal to control the conductive state of the transistor, a first resistor connected between the control electrode of the transistor and the control terminal, and a series circuit of a diode and a second resistor, the series circuit being connected in parallel with the first resistor between the control terminal and the control electrode of the transistor. | 07-23-2009 |
| 20100073067 | Inductive Load Power Switching Circuits - Power switching circuits including an inductive load and a switching device are described. The switches devices can be either low-side or high-side switches. Some of the switches are transistors that are able to block voltages or prevent substantial current from flowing through the transistor when voltage is applied across the transistor. | 03-25-2010 |
| 20110121883 | SYSTEM AND METHOD FOR PROVIDING SYMMETRIC, EFFICIENT BI-DIRECTIONAL POWER FLOW AND POWER CONDITIONING - A system and method for providing symmetric, efficient bi-directional power flow and power conditioning for high-voltage applications. Embodiments include a first vertical-channel junction gate field-effect transistor (VJFET), a second VJFET, a gate drive coupled to the first VJFET gate and the second VJFET gate. Both VJFETs include a gate, drain (D | 05-26-2011 |
| 20110121884 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 05-26-2011 |
| 20110199148 | HYBRID POWER DEVICE - A hybrid power device is formed of a normally-on type SiC-JFET and a normally-off type Si-MOSFET, which are connected in cascode with a source of the SiC-JFET and a drain of the Si-MOSFET being connected to each other thereby forming a hybrid power FET. A gate of the SiC-JFET and a source of the Si-MOSFET are connected via a switching speed regulating resistor. A capacitor is connected to the switching speed regulating resistor in parallel to control a switching speed to a first speed in a former part of the switching period of the hybrid power FET and to a second switching speed in a latter part of the switching period. The second switching speed is lower than the first switching speed. | 08-18-2011 |
| 20110267132 | BI-DIRECTIONAL CIRCUIT BREAKER - A circuit breaker comprising first and second JFETs, each comprising a gate, drain and source connection, the JFETs sources being operatively connected to each other to form a common-source connection and adapted to be connected to and operating to open an external circuit when the current flowing through the JFETs exceeds a predetermined threshold, the JFETs' gates, and common-source connection being operatively connected to a gate driver circuit which causes the JFETs to turn off when the predetermined threshold is exceeded; whereupon the current flows through the common-source connection into the second gate and into the gate driver circuit which causes the gate driver circuit to turn off the first and second JFETs and open the circuit breaker. Also claimed is a method of sensing an overloaded circuit comprising leading and trailing JFETs in a circuit that open the circuit and prevent current flow when a predetermined threshold is exceeded. | 11-03-2011 |
| 20110291738 | JFET Series Connection - The invention relates to a switching device for switching a current between a first connection ( | 12-01-2011 |
| 20120105131 | Switching device with a cascode circuit - A switching device for switching a current between a first terminal ( | 05-03-2012 |
| 20120133420 | System and Method for Bootstrapping a Switch Driver - In accordance with an embodiment, a driver circuit includes a low-side driver having a first output configured to be coupled to a control node of a first semiconductor switch, and a reference input configured to be coupled to a reference node of the first semiconductor switch. The low-side driver also includes a first capacitor coupled between an output node of the first semiconductor switch and a first node, a first diode coupled between the first node and a first power input of the driver, and a second capacitor coupled between the first power input of the low-side driver and the reference node of the first semiconductor switch. | 05-31-2012 |
| 20120223763 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device which avoids an adverse effect of high temperatures due to a switching element and in which a circuit to prevent false firing is arranged on the same substrate as the switching element. An N-channel type MOSFET | 09-06-2012 |
| 20120242396 | NO-POWER NORMALLY CLOSED ANALOG SWITCH - This document discusses, among other things, a switching device and method configured to receive a signal at a signal input, to provide the signal at an output in a first state without an applied voltage at a first control input, and to isolate the signal from the output in a second state with an applied voltage at the first control input. In an example, the switching device can include first, second, and third transistors, wherein the source of the first transistor is coupled to the drain of the second transistor and to the gate of the third transistor, wherein the signal input is coupled to the drain of the first transistor and to the drain of the third transistor, and wherein the output is coupled to the source of the third transistor. | 09-27-2012 |
| 20120262220 | CASCODE SWITCHES INCLUDING NORMALLY-OFF AND NORMALLY-ON DEVICES AND CIRCUITS COMPRISING THE SWITCHES - Switches comprising a normally-off semiconductor device and a normally-on semiconductor device in cascode arrangement are described. The switches include a capacitor connected between the gate of the normally-on device and the source of the normally-off device. The switches may also include a zener diode connected in parallel with the capacitor between the gate of the normally-on device and the source of the normally-off device. The switches may also include a pair of zener diodes in series opposing arrangement between the gate and source of the normally-off device. Switches comprising multiple normally-on and/or multiple normally-off devices are also described. The normally-on device can be a JFET such as a SiC JFET. The normally-off device can be a MOSFET such as a Si MOSFET. The normally-on device can be a high voltage device and the normally-off device can be a low voltage device. Circuits comprising the switches are also described. | 10-18-2012 |
| 20130057332 | SWITCHING DEVICE HAVING A JFET SERIES CIRCUIT - A switching device for switching a current between a first connection and a second connection including a series circuit of at least two JFETs (J | 03-07-2013 |
| 20130194027 | Cascode Switch with Robust Turn On and Turn Off - A cascode switch includes a first power transistor configured to be coupled to a load and a second power transistor coupled in series with the first power transistor so that the second power transistor is between ground and the first power transistor. The second power transistor is operable to switch on and off responsive to a pulse source coupled to a gate of the second power transistor. The first power transistor is operable to switch on and off responsive to the same pulse source as the second power transistor or a DC source coupled to a gate of the first power transistor. Alternatively or in addition, a transistor device is coupled to the gate of the first power transistor and operable to actively turn off the first power transistor independent of the load current. | 08-01-2013 |
| 20140015592 | INTEGRATED CIRCUIT WITH AT LEAST TWO SWITCHES - A circuit includes first and second semiconductor switches each having a load path and control terminal and their load paths connected in series. At least one of the first and second switches includes a first semiconductor device having a load path and a control terminal, the control terminal coupled to the control terminal of the switch. A plurality of second semiconductor devices each have a load path between a first load terminal and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices. One of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. | 01-16-2014 |
| 20140139282 | Embedded JFETs for High Voltage Applications - A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET. | 05-22-2014 |
| 20150109048 | TRANSISTOR AND METHOD OF OPERATING SAME - A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer. | 04-23-2015 |
| 20160112041 | POWER TRANSISTOR MODEL - A power transistor model is described which comprises a source drain path, a first current source and a voltage controlled second current source in the source drain path which model the static voltage-current-relationship of a modeled power transistor, wherein the voltage-controlled second current source models a nonlinear behavior of a drift zone of the power transistor. | 04-21-2016 |
| 327431000 | MESFET (i.e., metal semiconductor field-effect transistor) | 3 |
| 20080197908 | Cascode Power Switch for use in a High-Frequency Power MESFET Buck Switching Power Supply - A cascode power switch for use in a MESFET based switching regulator includes a MOSFET in series with a normally-off MESFET. The cascode power switch is typically connected in between a power source and a node Vx. The node Vx is connected to an output node via an inductor and to ground via a Schottky diode or a second MESFET or both. A control circuit drives the MESFET (and the second MESFET) so that the inductor is alternately connected to the battery and to ground. The MOSFET is switched off during sleep or standby modes to minimize leakage current through the MESFET. The MOSFET is therefore switched at a low frequency compared to the MESFET and does not contribute significantly to switching losses in the converter. | 08-21-2008 |
| 20080265980 | Gate drive for wide bandgap semiconductor device - A gate drive circuit for a wide bandgap semiconductor junction gated transistor includes a gate current limit resistor. The gate current limit resistor is coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use and limits a gate current provided to the gate input of the junction gated transistor. An AC-coupled charging capacitor is also included in the gate drive circuit. The AC-coupled charging capacitor is coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use and is positioned parallel to the gate current limit resistor. A diode is coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output of a gate drive chip on the other end When in use, the diode lowers a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor through the gate current limit resistor. The gate drive circuitry provides a small, efficient, and cost effective control circuitry for a wide bandgap semiconductor junction gated transistor. | 10-30-2008 |
| 20100026371 | SWITCHING DEVICE AND SWITCHING ARRANGEMENTS FOR SWITCHING AT HIGH OPERATING VOLTAGE - A switching device for switching a high operating voltage is described. The switching device-includes a first switching arrangement with a first self-conducting switching element), which has a control connector and a first and second main connector for forming a switching section. The switching device may include a second switching arrangement having a first and a second connector for forming a switching section, which is wired serially in respect to the switching section of the first switching arrangement. The second switching arrangement includes an optically triggerable switching element for switching the switching section of the second switching arrangement so it becomes conductive. The second connector of the second switching arrangement is connected with the control connector of the first self-conducting switching element. | 02-04-2010 |
