| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327378000 | Compensation for variations in external physical values (e.g., temperature, etc.) | 19 |
| 20100079190 | Power Transistor and Method for Controlling a Power Transistor - Embodiments of the invention are related to a power transistor and a method for controlling a power transistor. In one embodiment a power transistor comprises a power semiconductor body with a plurality of power transistor cells each having a control electrode and a current path. The power transistor furthermore comprises a temperature sensor formed by at least one transistor cell in the power semiconductor body whose control electrode is coupled to one electrode of the current path forming a reversed biased pn-junction. | 04-01-2010 |
| 20100237927 | Circuit Configuration for Protecting a Circuit Element Having Overcurrent and Overtemperature Detection - A circuit configuration having a detection unit designed to generate an output signal that is representative of a load current of a transistor switch, depending on an input signal that is representative of the load current of the transistor switch. The detection unit includes a temperature compensation unit that is designed to take into account the temperature of the transistor switch. The detection unit further includes a delay unit that is designed to delay the detection of the input signal until a prescribed switch-on time period, relative to a switch-on procedure of the transistor switch, has passed. The detection unit is designed in an application-specific integrated circuit. | 09-23-2010 |
| 20110025400 | ELECTRONIC DC CIRCUIT BREAKER - The present invention relates to a device for connecting and breaking DC power comprising an input DC power (DC-In) arranged to be connected to a circuit board ( | 02-03-2011 |
| 20110316606 | Power Switch Temperature Control Device and Method - An embodiment method for power switch temperature control comprises monitoring a power transistor for a delta-temperature fault, and monitoring the power transistor for an over-temperature fault. If a delta-temperature fault is detected, then the power transistor is commanded to turn off. If an over-temperature fault is detected, then the power transistor is commanded to turn off, and delta-temperature hysteresis cycling is disabled. | 12-29-2011 |
| 20120126878 | STABLE ON-RESISTANCE SWITCH CIRCUIT - This document discusses, among other things, a compensation circuit configured to modulate a control voltage of a switch over a range of ambient temperatures during a conduction state of the switch to maintain a specified resistance between first and second nodes of the switch. The compensation circuit can include a temperature-insensitive resistor configured to provide a sense current, a current mirror configured to provide a mirror current using the sense current, and a temperature-sensitive resistor configured to provide the control voltage using the mirror current. | 05-24-2012 |
| 20120242392 | Leakage Power Management Using Programmable Power Gating Transistors and On-Chip Aging and Temperature Tracking Circuit - The number of power-gating transistors on an integrated circuit used for power reduction in a sleep mode is controlled during a wake state to adjust the current flow and hence voltage drop across the power-gating transistors as a function of aging of these transistors and/or a function of temperature of the integrated circuit. In this way, the supply voltage to the integrated circuit may be better tailored to minimize current leakage when the integrated circuit is young or operating at low temperatures. | 09-27-2012 |
| 20130207711 | CALIBRATION CIRCUIT - A first constant voltage is supplied to a variable capacitance in a switched capacitor, and the variable capacitance is effectively charged to the first constant voltage in each cycle of a sampling clock. A current generated by charging the calibration resistance is averaged, and a resultant current is compared against a current generated by applying a second constant voltage to a resistance. The capacitance value of the variable capacitance is adjusted in accordance with a result of the comparison. Thus the variable capacitance is calibrated so as to have a target value. | 08-15-2013 |
| 20130234777 | SWITCHING DEVICE OF SEMICONDUCTOR CIRCUIT AND SWITCHING METHOD OF THE SAME - Each of a plurality of redundantly formed semiconductor circuits integrally has a monitor transistor and is energized by being supplied with an enable signal. A monitor circuit associated with each semiconductor circuit detects a collector current of the monitor transistor and, when the collector current is less than a predetermined threshold value, outputs an alarm signal. A variation predicting circuit calculates the rate of change per unit time with respect to the collector current. An order determining circuit stores the identification numbers of the semiconductor circuits into an order determination register in descending order of the rate of change. The order determination register initially outputs the front identification number, and thereafter outputs the respective following identification number each time a respective one of the monitor circuits outputs an alarm signal. A semiconductor circuit selection decoder supplies an enable signal to the semiconductor circuit indicated by an identification number. | 09-12-2013 |
| 20130285732 | POWER TRANSISTOR DRIVE CIRCUIT - Aspects of the invention include a constant current source that generates a constant current, apart from a constant current circuit, and a temperature detection zener diode (a temperature detection element). The input side of the constant current source can be connected to a power source. The output side of the constant current source can be connected to the anode of the temperature detection diode. The anode of the temperature detection zener diode can also be connected to one end of a resistor provided in the constant current circuit. Further, the cathode of the temperature detection zener diode can be connected to a GND. Further, the temperature detection zener diode can be incorporated in the same semiconductor substrate as a semiconductor substrate into which an IGBT is built. | 10-31-2013 |
| 20130342263 | HEATER FOR SEMICONDUCTOR DEVICE - Representative implementations of devices and techniques provide heating for a semiconductor device. A heating element is arranged to be located proximate to the semiconductor device and to increase a temperature of at least a portion of the semiconductor device during operation of the semiconductor device. | 12-26-2013 |
| 20140015590 | POWER GATING CIRCUIT - A power gating circuit includes a first current switch, a second current switch, and a switching controller. The first current switch is connected between a power rail and a circuit block operated by an operating supply voltage, and provides a first current when turned on. The second current switch is connected between the power rail and circuit block, and provides a second current larger than the first current when turned on. The switching controller turns on first current switch when transitioned from a sleep mode to an active mode to change the operating supply voltage using the first current, generates a reference voltage based on the operating supply voltage that changes more slowly than the operating supply voltage, and turns on the second current switch based on the reference voltage to provide the second current to the circuit block. | 01-16-2014 |
| 20140145779 | CIRCUIT ARRANGEMENT FOR SWITCHING A CURRENT, AND METHOD FOR OPERATING A SEMICONDUCTOR CIRCUIT BREAKER - A control voltage is generated at a control input of a semiconductor circuit breaker by an actuation circuit at switching flanks of a switching signal, said control voltage having a profile which is flattened in relation to the profile of the switching signal. With the disclosed method, the switching losses in a semiconductor circuit breaker are reduced. By defining a value for a switching parameter of a control device of the actuation circuit, the switching behavior of the actuation circuit can be influenced by the switching parameter. A specific parameter value of the switching parameter can be varied during operation of the actuation circuit. | 05-29-2014 |
| 20140152374 | SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND POWER CONVERTER - A semiconductor element including an MISFET exhibits diode characteristics in a reverse direction through an epitaxial channel layer. The semiconductor element includes: a silicon carbide semiconductor substrate of a first conductivity type, semiconductor layer of the first conductivity type, body region of a second conductivity type, source region of the first conductivity type, epitaxial channel layer in contact with the body region, source electrode, gate insulating film, gate electrode and drain electrode. If the voltage applied to the gate electrode is smaller than a threshold voltage, the semiconductor element functions as a diode wherein current flows from the source electrode to the drain electrode through the epitaxial channel layer. The absolute value of the turn-on voltage of this diode is smaller than the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer. | 06-05-2014 |
| 20140306749 | SEMICONDUCTOR ELEMENT TEMPERATURE DETECTING SYSTEM AND SEMICONDUCTOR MODULE AND SEMICONDUCTOR MODULE SYSTEM - A temperature data coding unit | 10-16-2014 |
| 20140368254 | GATE DRIVER, SWITCH CONTROL CIRCUIT AND POWER SUPPLY DEVICE COMPRISING THE GATE DRIVER CIRCUIT - The present invention relates to a gate driving circuit, a switch control circuit including the gate driving circuit, and a power supply. The gate driving circuit generates a gate voltage of the power switch. The gate driving circuit includes: a delay control circuit generating a first control signal that controls a rising slope of the gate voltage at a first time after a first delay period is passed from a rising time of the gate voltage and generating a second control signal that controls the rising slope of the gate voltage at a time after a second delay period is passed from the first time; and a temperature compensation circuit that varies the first delay period according to a temperature. | 12-18-2014 |
| 20150084684 | TEMPERATURE DEPENDENT BIASING FOR LEAKAGE POWER REDUCTION - Temperature dependent biasing for leakage power reduction. In some embodiments, a semiconductor device may include a biasing circuit configured to generate a voltage that varies dependent upon a temperature of the semiconductor device and a logic circuit operably coupled to the biasing circuit, where the voltage is applied to a bulk terminal of one or more transistors within the logic circuit, and where the voltage has a value outside of a voltage supply range of the logic circuit. In another embodiment, a semiconductor device may include a biasing circuit configured to generate a voltage that varies according to a temperature of the semiconductor device and a power switch operably coupled to the biasing circuit, where the voltage is applied to a gate terminal of the power switch, and where the voltage has a value outside of a voltage supply range of the power switch. | 03-26-2015 |
| 20160087621 | INTEGRATED MAGNETIC FIELD SENSOR-CONTROLLED SWITCH DEVICES - Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. In embodiments, the device can also include integrated load protection and load diagnostics. Embodiments can provide load switching and optional simultaneous logic signaling, for example to update a microcontroller or electronic control unit (ECU), while reducing space and complexity and thereby cost. | 03-24-2016 |
| 20180026609 | METHOD FOR COMPENSATING EFFECTS OF SUBSTRATE STRESSES IN SEMICONDUCTOR DEVICES, AND CORRESPONDING DEVICE | 01-25-2018 |
| 20180026625 | PROGRAMMABLE CURRENT FOR CORRELATED ELECTRON SWITCH | 01-25-2018 |
