| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 324710500 | Semiconductors for nonelectrical property | 18 |
| 20080265867 | PROCESS FOR MEASURING BOND-LINE THICKNESS - A process for measuring the thickness of an insulating material. The process includes providing a device used to measure capacitance, and electrically connecting the capacitance measuring device to a heat sink and an electrical, heat-generating component. The thickness of the insulating material is determined by measuring the capacitance of the insulating material according to the formula; | 10-30-2008 |
| 20080278140 | METHOD OF USING A FOUR TERMINAL HYBRID SILICON/ORGANIC FIELD EFFECT SENSOR DEVICE - A four terminal field effect device comprises a silicon field effect device with a silicon N-type semiconductor channel and an N+ source and drain region. An insulator is deposited over the N-type semiconductor channel. An organic semiconductor material is deposited over the insulator gate forming a organic semiconductor channel and is exposed to the ambient environment. Drain and source electrodes are deposited and electrically couple to respective ends of the organic semiconductor channel. The two independent source electrodes and the two independent drain electrodes form the four terminals of the new field effect device. The organic semiconductor channel may be charged and discharged electrically and have its charge modified in response to chemicals in the ambient environment. The conductivity of silicon semiconductor channel is modulated by induced charges in the common gate in response to charges in the organic semiconductor channel. | 11-13-2008 |
| 20090079414 | USING FLOATING GATE FIELD EFFECT TRANSISTORS FOR CHEMICAL AND/OR BIOLOGICAL SENSING - Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, V | 03-26-2009 |
| 20090108831 | FLOATING GATE FIELD EFFECT TRANSISTORS FOR CHEMICAL AND/OR BIOLOGICAL SENSING - Specific ionic interactions with a sensing material that is electrically coupled with the floating gate of a floating gate-based ion sensitive field effect transistor (FGISFET) may be used to sense a target material. For example, an FGISFET can use (e.g., previously demonstrated) ionic interaction-based sensing techniques with the floating gate of floating gate field effect transistors. The floating gate can serves as a probe and an interface to convert chemical and/or biological signals to electrical signals, which can be measured by monitoring the change in the device's threshold voltage, V | 04-30-2009 |
| 20090140718 | WAVELENGTH METER AND ASSOCIATED METHOD - A wavelength meter, an associated method, and system are generally described. In one example, an apparatus includes a photodiode to receive an optical signal and to generate a photocurrent upon receiving the optical signal, the photodiode having an absorption edge that is substantially aligned with a band of wavelengths, wherein the absorption edge shifts toward longer wavelengths when a reverse bias is applied to the photodiode, and control electronics coupled with the photodiode to apply at least a first reverse bias and a second reverse bias to the photodiode, wherein a ratio of a first measurement of the photocurrent at the first reverse bias and a second measurement of the photocurrent at the second reverse bias provides information about the wavelength of the optical signal. | 06-04-2009 |
| 20090146639 | DETECTOR - Provided is a detector having a transistor or resistor structure. When an electrode is exposed to a detected solution, such as blood, a variation in current flowing through the detected solution may be greater than a variation in the electrical characteristics of the detector caused by a variation in the physical properties of semiconductor so that it is difficult to detect whether a bio-particle is contained in the detected solution. In order to solve this problem, a detection portion and an electrical measurement portion are separately formed, and the detection portion is processed with the bio-particle and then post-processed. Subsequently, the detection portion and the electrical measurement portion are bonded to each other using, for example, a laminating process, and the detector measures a detection value. | 06-11-2009 |
| 20100007326 | Material Detector - [Object] To realize a small size and high detection accuracy in a substance detection apparatus. | 01-14-2010 |
| 20100109637 | SENSOR SYSTEM AND METHOD - A sensor system for detecting the presence of one or more target substances reacting with one or more target recognition element types for producing an electrical charge detectable by a differential pair of field effect transistors that provide increased sensitivity by minimizing common mode effects on the differential pair. The differential pair is controlled by optimization algorithms in a digital signal processor that reads and store electrical characteristics of the differential pair and maintains the differential pair at optimal operating points based on continuously monitoring the differential pair. One or more target recognition element types are disbursed over a sensor gate area of the differential pair that detects one or more signature signals created by the binding of one or more target substances and the target recognition element types. The detected signature signals are compared with a library of stored signature signals for determining the identity of the target substances. | 05-06-2010 |
| 20100188069 | SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS - Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor. | 07-29-2010 |
| 20110050201 | Sub-Threshold Forced Plate FET Sensor for Sensing Inertial Displacements, a Method and System Thereof - The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO | 03-03-2011 |
| 20110074381 | SENSORS USING HIGH ELECTRON MOBILITY TRANSISTORS - Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor. | 03-31-2011 |
| 20120001615 | ARRAY COLUMN INTEGRATOR - The described embodiments may provide a chemical detection circuit with an improved signal-to-noise ration. The chemical detection circuit may include a current source, a chemical detection pixel, an amplifier and a capacitor. The chemical detection pixel may comprise a chemical-sensitive transistor that may have a first and second terminals and a row-select switch coupled between the current source and chemically-sensitive transistor. The amplifier may have a first input and a second input, with the first input coupled to an output of the chemically-sensitive transistor via a switch and the second input coupled to an offset voltage line. The capacitor may be coupled between an output of the amplifier and the first input of the amplifier. The capacitor and amplifier may form an integrator and may be shared by a column of chemical detection pixels. | 01-05-2012 |
| 20120001616 | COLUMN ADC - The described embodiments may provide a chemical detection circuit. The chemical detection circuit may comprise a column of chemically-sensitive pixels. Each chemically-sensitive pixel may comprise a chemically-sensitive transistor, and a row selection device. The chemical detection circuit may further comprise a column interface circuit coupled to the column of chemically-sensitive pixels and an analog-to-digital converter (ADC) coupled to the column interface circuit. Each column interface circuit and column-level ADC may be arrayed with other identical circuits and share critical resources such as biasing and voltage references, thereby saving area and power. | 01-05-2012 |
| 20130265031 | NANOGAP SENSOR AND METHOD OF MANUFACTURING THE SAME - A nanogap sensor includes a first layer in which a micropore is formed; a graphene sheet disposed on the first layer and including a nanoelectrode region in which a nanogap is formed, the nanogap aligned with the micropore; a first electrode formed on the grapheme sheet; and a second electrode formed on the graphene sheet, wherein the first electrode and the second electrode are connected to respective ends of the nanoelectrode region. | 10-10-2013 |
| 20140167731 | DETERMINING THE DOPANT CONTENT OF A COMPENSATED SILICON SAMPLE - Method for determining dopant impurities concentrations in a silicon sample involves provision of a silicon ingot including donor type dopant impurities and acceptor type dopant impurities, a step for determining the position of a first area of the ingot in which a transition takes place between a first conductivity and a second opposite conductivity types, by subjecting ingot portions to chemical treatment based on hydrofluoric acid, nitric acid and acetic acid, enabling defects to be revealed on one of the portions corresponding to the transition between the first conductivity and the second conductivity types, a step of measuring the concentration of free charge carriers in a second area of the ingot, different from the first area, and a step for determining concentrations of dopant impurities in the sample from the position of the first area and the concentration of free charge carriers in the second area of the ingot. | 06-19-2014 |
| 20140300340 | HIGH-K METAL GATE DEVICE STRUCTURE FOR HUMAN BLOOD GAS SENSING - A device structure for detecting partial pressure of oxygen in blood includes a semiconductor substrate including a source region and a drain region. A multi-layer gate structure is formed on the semiconductor substrate. The multi-layer gate structure includes an oxide layer formed over the semiconductor substrate, a high-k layer formed over the oxide layer, a metal gate layer formed over the high-k layer, and a polysilicon layer formed over the metal gate layer. A receiving area holds a blood sample in contact with the multi-layer gate structure. The high-k layer is exposed to contact the blood sample in the receiving area. | 10-09-2014 |
| 20150028845 | HETEROJUNCTION NANOPORE FOR SEQUENCING - A technique is provided for performing sequencing with a nanodevice. Alternating graphene layers and dielectric layers are provided one on top of another to form a multilayer stack of heterojunctions. The dielectric layers include boron nitride, molybdenum disulfide, and/or hafnium disulfide layers. A nanopore is formed through the graphene layers and the dielectric layers. The graphene layers are individually addressed by applying individual voltages to each of the graphene layers on a one to one basis when a particular base of a molecule is in the nanopore. Each of the graphene layers is an electrode. Individual electrical currents are measured for each of the graphene layers as the particular base moves from a first graphene layer through a last graphene layer in the nanopore. The base is identified according to the individual electrical currents repeatedly measured for the base moving from the first through last graphene layer in the nanopore. | 01-29-2015 |
| 20150028846 | HETEROJUNCTION NANOPORE FOR SEQUENCING - A technique is provided for performing sequencing with a nanodevice. Alternating graphene layers and dielectric layers are provided one on top of another to form a multilayer stack of heterojunctions. The dielectric layers include boron nitride, molybdenum disulfide, and/or hafnium disulfide layers. A nanopore is formed through the graphene layers and the dielectric layers. The graphene layers are individually addressed by applying individual voltages to each of the graphene layers on a one to one basis when a particular base of a molecule is in the nanopore. Each of the graphene layers is an electrode. Individual electrical currents are measured for each of the graphene layers as the particular base moves from a first graphene layer through a last graphene layer in the nanopore. The base is identified according to the individual electrical currents repeatedly measured for the base moving from the first through last graphene layer in the nanopore. | 01-29-2015 |
