| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 310360000 | Rotation of crystal axis (e.g., cut angle) | 34 |
| 20080197755 | SURFACE-MOUNT TYPE CRYSTAL UNIT - A surface-mount type crystal unit includes a package body which is made of a laminated ceramic and has a bottom wall layer and a frame wall formed on the bottom wall layer, the frame wall layer having an opening. In the package body, a concavity is constructed of the opening. The crystal unit further includes a pair of crystal holding terminals formed on one end part of the inner bottom surface of a concavity which is a top face of the bottom wall layer; a crystal blank held in the concavity by fixing the both sides of the one end part of the crystal blank to the pair of crystal holding terminals; a thermistor; and a cover which closes the concavity. The thermistor is arranged in a hollow part arranged in the top face of the bottom wall layer in the concavity. | 08-21-2008 |
| 20090189490 | Piezoelectric Thin Film Device - A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K | 07-30-2009 |
| 20090212667 | Piezoelectric single crystal device and fabrication method thereof - The present invention provides a piezoelectric single crystal device excellent in heat resistance and capable of stably maintaining the electromechanical coupling factor k | 08-27-2009 |
| 20090236946 | PIEZOELECTRIC/ELECTROSTRICTIVE FILM ELEMENT - An actuator includes a first electrode disposed on the top surface of a ceramic substrate (for example, zirconium oxide), a piezoelectric/electrostrictive substance disposed on the first electrode, and a second electrode disposed on the piezoelectric/electrostrictive substance, wherein the input of an electric power alters the volume of the piezoelectric/electrostrictive substance. The piezoelectric/electrostrictive substance contains a plurality of crystal grains that have a wavy structure composed of wavy grain boundaries including concave portions and convex portions. The crystal grains contain ABO | 09-24-2009 |
| 20090273257 | PIEZOELECTRIC SUBSTANCE, PIEZOELECTRIC ELEMENT, AND LIQUID DISCHARGE HEAD AND LIQUID DISCHARGE APPARATUS USING PIEZOELECTRIC ELEMENT - A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO | 11-05-2009 |
| 20100244632 | Piezoelectric element and gyroscope - A piezoelectric element having a crystal structure that enables a piezoelectric film to be formed in an unstressed state is provided. The piezoelectric film contains an a-axis oriented crystal and a c-axis oriented crystal, where a difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å. The present inventors have newly found that a stress accumulated in the piezoelectric film can be reduced while maintaining favorable piezoelectric properties when a condition that the difference in lattice constant between the a-axis oriented crystal and the c-axis oriented crystal is not more than 0.06 Å is satisfied. When the condition is satisfied, the c-axis oriented crystal and the a-axis oriented crystal are properly balanced and as a result crystal particles of the piezoelectric film are closest-packed on its base in an ideal state, which contributes to a reduced stress. | 09-30-2010 |
| 20100259131 | CRYSTAL UNIT - A double rotation Y-cut crystal unit includes a crystal element, which is respectively rotated by an angle θ° and an angle φ° in a counterclockwise direction centering on an X axis and a Z axis of crystal axes (X, Y, Z), which principal surface is perpendicular to a Y″ axis of newly-generated rotated crystal axes (X′, Y″, Z′), and which is formed into a rectangular geometry longer in one direction, wherein a direction of the long side of the crystal element corresponds to an axial direction when the crystal element is rotated by an angle α° in the counterclockwise direction with the X′ axis serving as a central axis in a plane of X′-Z′ of the rotated crystal axes serving as the principal surface, and wherein the angle α° is set to (30-φ)°±45°. | 10-14-2010 |
| 20100314972 | PIEZOELECTRIC THIN FILM ELEMENT AND PIEZOELECTRIC THIN FILM DEVICE INCLUDING THE SAME - A piezoelectric thin film element is provided, including on a substrate: a piezoelectric thin film expressed by a general formula (Na | 12-16-2010 |
| 20110074251 | Piezoelectric Thin Film Device - A sensor for detecting a physical quantity includes a piezoelectric thin film device having a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K | 03-31-2011 |
| 20110215679 | PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID EJECTION APPARATUS, AND METHOD OF PRODUCING PIEZOELECTRIC FILM - A piezoelectric film is formed on a surface of a substrate by a vapor deposition process without generating grain boundaries which are substantially parallel to the surface of the substrate and are caused by lamination. A normal of a (100) plane of each of crystals constituting the piezoelectric film is inclined from a normal of the surface of the substrate by an angle of not smaller than 6° and not larger than 36°. | 09-08-2011 |
| 20120187804 | ARCHITECTURE FOR PIEZOELECTRIC MEMS DEVICES - A piezoelectric thin film device comprises a piezoelectric thin film having upper and lower surfaces and a defined tilted crystal morphology, a top electrode disposed on the upper surface, a substrate having a surface morphology that corresponds to the defined crystallographically tilted morphology, and a bottom electrode disposed between and crystallographically linked to both the lower surface of the piezoelectric thin film and the substrate surface, the bottom and top electrodes having a parallel planar configuration relative to the plane of the substrate and the defined crystallographically tilted morphology having a crystallographic c-axis direction oriented at a >0° angle relative to the normal to the plane of the electrodes; and method of making the device. | 07-26-2012 |
| 20120306322 | Electrical Component Comprising a Material with a Perovskite Structure and Optimized Electrodes and Fabrication Process - An electrical component comprises a lead-based perovskite crystal material layer between a lower electrode on the surface of a substrate and an upper electrode, characterized in that the lower electrode comprises a stabilizing first layer made of a first material and a seeding second layer made of a second material, the first and second materials having the same chemical composition but different structural parameters and/or densities. A process for fabricating a component is also provided, in which the material with a perovskite structure may be PZT with a (100) or (111) orientation. | 12-06-2012 |
| 20130038176 | MANUFACTURING METHOD OF PIEZOELECTRIC FILM ELEMENT, PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE - A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K | 02-14-2013 |
| 20130106248 | BULK ACOUSTIC RESONATOR COMPRISING PIEZOELECTRIC LAYER AND INVERSE PIEZOELECTRIC LAYER | 05-02-2013 |
| 20130187516 | PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC DEVICE - A piezoelectric element includes a substrate, and at least a lower electrode layer, a piezoelectric film represented by a general formula of (Na | 07-25-2013 |
| 20130193808 | FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING - A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended. | 08-01-2013 |
| 20130320813 | DIELECTRIC DEVICE - A dielectric device has a first electrode film having a non-oriented or amorphous structure, a dielectric film provided on the first electrode film and having a preferentially oriented structure, and a second electrode film provided on the dielectric film and having a non-oriented or amorphous structure. | 12-05-2013 |
| 20140091676 | CRYSTAL UNIT - A crystal unit according to this disclosure includes an IT-cut round crystal element supported at two points on an outer periphery portion of the IT-cut round crystal element. A rotation angle in plane between a straight line connecting the two points and Z″ axis of a double-rotation is within a specific range. The specific range includes an angle where an amount of frequency variation is zero. | 04-03-2014 |
| 20140167566 | PIEZOELECTRIC BULK WAVE DEVICE, AND METHOD OF MANUFACTURING THE PIEZOELECTRIC BULK WAVE DEVICE - A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO | 06-19-2014 |
| 20140306581 | PIEZOELECTRIC MATERIALS AND METHODS OF PROPERTY CONTROL - Among other things, piezoelectric materials and methods of their manufacture are described; particularly methods of forming regions of varying crystal structure within a relaxor piezoelectric substrate. Such methods may including heating the piezoelectric substrate above the transition temperature and below the Curie temperature such that a first phase transition occurs to a first crystal structure; rapidly cooling the piezoelectric substrate below the transition temperature at a cooling rate that is sufficiently high for the first crystal structure to persist; and applying an electric field through one or more selected regions of the piezoelectric substrate, such that within the one or more selected regions, a second phase transition occurs and results in a second crystal structure. | 10-16-2014 |
| 20150084486 | PIEZOELECTRIC ELEMENT - Disclosed is a piezoelectric element wherein a lower electrode made of Pt, a buffer layer made of PLT, and a piezoelectric thin film to be a perovskite ferroelectric thin film are formed in this order on a substrate. The average crystal grain size of Pt forming the lower electrode is not smaller than 50 nm and not larger than 150 nm. | 03-26-2015 |
| 20150325776 | PIEZOELECTRIC VIBRATION PIECE AND PIEZOELECTRIC VIBRATION DEVICE USING SAME - A piezoelectric vibration piece has an inverted mesa-type structure, comprising a thinned portion serving as a vibration region at a central part of a piezoelectric plate; and a thickened portion formed all along or partly along perimeter of the thinned portion to reinforce the thinned portion. In the piezoelectric vibration piece, contact metals including a large number of discrete metallic thin films are provided on the whole surfaces of the piezoelectric plate. A piezoelectric vibration device comprises the piezoelectric vibration piece which is housed in a package, wherein extraction electrodes of the piezoelectric vibration piece are connected to internal terminals of the package through a conductive adhesive. These structural and technical advantages prevent undesirable flowage of the conductive adhesive before thermal curing. As a result, the piezoelectric vibration piece and the piezoelectric vibration device comprising the same successfully attain excellent vibration characteristics. | 11-12-2015 |
| 20150340591 | HIGH TEMPERATURE SENSORS AND TRANSDUCERS - A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d | 11-26-2015 |
| 20150364670 | PIEZOELECTRIC DEVICE, PIEZOELECTRIC ACTUATOR, PIEZOELECTRIC SENSOR, HARD DISK DRIVE, AND INKJET PRINTER APPARATUS - A piezoelectric element exhibiting a small leakage current density and high reliability as compared with a KNN thin film piezoelectric element in the related art is provided. The piezoelectric element is characterized by including a lower electrode, a piezoelectric layer primarily made from potassium-sodium niobate, which is a perovskite type compound represented by a general formula ABO | 12-17-2015 |
| 310361000 | Quartz | 10 |
| 20080203858 | Sc Cut Crystal Resonator - The outer shape of a quartz crystal blank is processed to have a predetermined shape, thereby providing an SC cut crystal resonator capable of reliably and reproducibly suppressing B mode resonance. In this SC cut crystal resonator, the surface of the quartz crystal orthogonal to the Y axis is rotated through 33° to 35° about the X axis and is then rotated from this rotated position through 22° to 24° about the Z axis, and a slender quartz crystal blank oblong in an X′ axis direction is cut from the rotated surface. The end surface of the quartz crystal blank orthogonal to the Z′ axis is tilted in a direction rotated through +7° to +13° or −7° to −13° about the X′ axis. | 08-28-2008 |
| 20080252178 | CONTOUR RESONATOR - A contour resonator at least includes a first vibrating substrate and a second vibrating substrate having main surfaces that face each other and are bonded. The contour resonator includes a first excitation electrode provided on a front main surface of the first vibrating substrate, a second excitation electrode provided on a back main surface of the second vibrating substrate, and a common intermediate excitation electrode provided at an interface between the first vibrating substrate and the second vibrating substrate. The first excitation electrode and the second excitation electrode are electrically connected to constitute a first terminal. The intermediate excitation electrode constitutes a second terminal. The first vibrating substrate and the second vibrating substrate perform a contour vibration in accordance with an excitation signal applied between the first terminal and the second terminal. | 10-16-2008 |
| 20090167117 | QUARTZ CRYSTAL RESONATOR ELEMENT, QUARTZ CRYSTAL DEVICE, AND METHOD FOR PRODUCING QUARTZ CRYSTAL RESONATOR ELEMENT - A quartz crystal resonator element includes an AT-cut quartz crystal substrate, the substrate having edges parallel to each of a Z″ axis obtained by rotating a Z′ axis in a range of −120° to +60° about a Y axis and an X′ axis perpendicular to the Z″ axis when an angle formed by rotating a +Z′ axis in a direction of a +X axis about the Y′ axis is a positive rotation angle; a thin section that forms a resonating section; and a thick section adjacent to the resonating section, the thin section and the thick section being formed on the quartz crystal substrate by wet etching. The thin section is formed either on a main surface of the substrate corresponding to a +Y′-axis side or on a main surface of the substrate corresponding to a −Y′-axis side. When the thin section is formed by the etching on the main surface of the +Y′-axis side, the thick section is provided at at least a +Z″-axis-side end of the thin section, whereas when the thin section is formed by the etching on the main surface of the −Y′-axis side, the thick section is provided at at least a −Z″-axis-side end of the thin section. | 07-02-2009 |
| 20090206705 | FASTENERS WITH WELDED ULTRASONIC STRESS TRANSDUCERS - An apparatus and method of mounting a stress transducer to a fastener includes securing the transducer to a weld insert, and welding the insert to the fastener. | 08-20-2009 |
| 20100109485 | ELECTROACOUSTIC COMPONENT - An electroacoustic component includes a substrate that includes a quartz single crystal. The quartz single crystal has a first Euler angle λ: −5°≦λ≦5°, a second Euler angle μ, and a third Euler angle θ. A contiguous region of the quartz single crystal has the following vertices P | 05-06-2010 |
| 20110248606 | RESONATOR ELEMENT, RESONATOR, AND PIEZOELECTRIC DEVICE - A resonator element includes: a laminate formed by laminating a plurality of piezoelectric substrates in which thickness-shear vibration occurs. | 10-13-2011 |
| 20140217856 | PIEZOELECTRIC RESONATOR ELEMENT AND PIEZOELECTRIC RESONATOR - A piezoelectric resonator element includes a piezoelectric substrate formed of an AT-cut quartz crystal substrate in which the thickness direction thereof is a direction parallel to the Y′ axis; and excitation electrodes disposed so as to face vibrating regions on both front and rear principal surfaces of the piezoelectric substrate. The piezoelectric substrate includes a rectangular excitation portion in which sides parallel to the X axis are long sides thereof, and sides parallel to the Z′ axis are short sides thereof; and a peripheral portion having a smaller thickness than the excitation portion and formed around the excitation portion. Each of side surfaces of the excitation portion extending in a direction parallel to the X axis is present in one plane, and each of side surfaces of the excitation portion extending in a direction parallel to the Z′ axis has a step. | 08-07-2014 |
| 20150054386 | RESONATING ELEMENT, RESONATOR, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND MOBILE OBJECT - A piezoelectric resonating element includes a piezoelectric substrate that includes a rectangular vibrating section and a thick section integrally formed with the vibrating section, excitation electrodes, and lead electrodes. The thick section includes a first thick section and a second thick section of which one end is formed continuous to the first thick section. The first thick section includes a first inclined section of which the thickness changes and a first thick section main body of a quadrangle column shape, and at least one slit is provided in the first thick section. | 02-26-2015 |
| 20150145378 | QUARTZ VIBRATOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments of the invention provide a quartz vibrator and a method for manufacturing the same. The quartz vibrator includes a quartz substrate vibrating depending on an electrical signal, first and second electrodes formed on both surfaces of the quartz substrate, and a first protective layer including an opening corresponding to a trimming region of the first electrode and formed on the first electrode. | 05-28-2015 |
| 20150303896 | QUARTZ VIBRATOR AND MANUFACTURING METHOD OF THE SAME - Embodiments of the invention provide a quartz vibrator, including a long side in a Y′ axis direction, a side in the Y′ axis direction including a first crystal face and a second crystal face formed thereon, and another side including an AT-cut quartz piece including a first crystal face and a second crystal face formed thereon and electrode layers formed on the AT-cut quartz piece. | 10-22-2015 |
