Class / Patent application number | Description | Number of patent applications / Date published |
310346000 | With temperature compensating structure | 41 |
20080238262 | ULTRASONIC PROBE - An ultrasonic probe includes piezoelectric elements each including grooves parallel to each other and arrayed in a direction substantially parallel to the grooves, and a mixed member which is to fill the grooves and obtained by mixing in a nonconductive resin member a nonconductive granular substance with a coefficient of thermal expansion of not more than substantially 10 | 10-02-2008 |
20080238263 | PIEZOELECTRIC ACTUATOR, METHOD OF MANUFACTURING SAME, AND LIQUID EJECTION HEAD - The piezoelectric actuator comprises: a supporting substrate; a thermal stress controlling layer which is formed on the supporting substrate; and a piezoelectric body which is formed as a film onto the thermal stress controlling layer on the supporting substrate at a higher temperature than room temperature, wherein the thermal stress controlling layer reduces a film stress induced by formation of the piezoelectric body. | 10-02-2008 |
20080265716 | PIEZOELECTRIC ACTUATOR WITH A SHEATH, FOR DISPOSITION IN A PIEZOELECTRIC INJECTOR - A piezoelectric actuator with piezoelectric elements, fastened between an actuator head and an actuator foot, and with a plastic sleeve surrounding at least the piezoelectric elements is proposed, which is set in a clamping ring on the actuator head and/or the actuator foot of the piezoelectric actuator. The respective clamping ring may be a metal part or a plastic part, which is equipped with clamping lugs suitable for setting the plastic sleeve and is thrust, pressed, or shrunk onto the respective actuator head and/or actuator foot of the steel piezoelectric actuator. | 10-30-2008 |
20080284286 | PIEZOELECTRIC CERAMIC AND METHOD FOR MAKING THE SAME, AND PIEZOELECTRIC RESONATOR AND METHOD FOR MAKING THE SAME - A piezoelectric ceramic whose resonance frequency temperature characteristic can be easily adjusted is provided. It contains first and second parts ( | 11-20-2008 |
20090066189 | BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a first medium, a second medium, a third medium, and a fourth medium that are laminated in that order and, an electrode including an IDT electrode disposed at an interface between the first medium and the second medium, the temperature coefficient of delay time TCD of a boundary acoustic wave has a positive value, the fourth medium or the second medium has a positive temperature coefficient of sound velocity TCV, the first medium has a negative temperature coefficient of sound velocity TCV, and the sound velocity of transverse wave of the third medium is set to be less than the sound velocity of transverse wave of the fourth medium and/or the second medium. | 03-12-2009 |
20090096328 | Substrate with a piezoelectric thin film - A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO | 04-16-2009 |
20090152993 | BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a stacked structure including a second medium, an IDT electrode, and a first medium, the stacked structure including the first medium having a temperature coefficient of group delay time TCD that is positive. The IDT electrode is stacked on the first medium. The second medium is stacked on the first medium so as to cover the IDT electrode and has a temperature coefficient of group delay time TCD that is negative. A third medium having an acoustic velocity of a transverse wave that is less than an acoustic velocity of a transverse wave of the second medium is arranged at least on a top surface of the IDT electrode. | 06-18-2009 |
20100156247 | Substrate with a piezoelectric thin film - A substrate has a first thermal expansion coefficient and a piezoelectric thin film has a second thermal expansion coefficient. The piezoelectric thin film is mainly composed of a potassium sodium niobate (K,Na)NbO | 06-24-2010 |
20100194244 | ACTUATOR UNIT FOR AN INJECTION SYSTEM OF AN INTERNAL COMBUSTION ENGINE - In an actuator unit for an injection system of an internal combustion engine, the difference in the longitudinal extension when a change of temperature of the piezoelectric actuator element occurs affecting the actuator unit is equalized compared to the actuator housing due to different thermal expansion coefficient values in that a fastening element is arranged on the actuator housing. The fastening element is made of a different material than the actuator housing and thus affects a force acting counter to the change of length of the actuator housing. | 08-05-2010 |
20100244631 | COMPOSITE SUBSTRATE, ELASTIC WAVE DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE - In a composite substrate | 09-30-2010 |
20100327701 | Piezoelectric resonator structures having temperature compensation - An electrical resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG). | 12-30-2010 |
20100327702 | TEMPERATURE CONTROL OF MICROMACHINED TRANSDUCERS - A micromachined structure, comprises a substrate and a cavity in the substrate. The micromachined structure comprises a membrane layer disposed over the substrate and spanning the cavity. | 12-30-2010 |
20110012480 | VIBRATING ELEMENT APPARATUS - The invention describes a vibrating element apparatus, preferably in the form of a tuning fork-type contact level transducer, and a method of forming the same. The tines of the transducer are vibrated by piezoelectric elements, which piezoelectric elements are arranged in a stack along with insulators and conductors to allow cyclic electrical signals to be applied thereto. The stack is provided as a sub-assembly allowing ready replacement in the field and | 01-20-2011 |
20110018399 | PIEZOELECTRIC DEVICE - A piezoelectric device has a piezoelectric vibration element mounted in a package wherein the piezoelectric vibration element comprises two stick-like vibration legs; a central leg provided between the two vibration legs; a coupling portion that couples one end of each of the two vibration legs and one end of the central leg; and a protrusion portion that is coupled to another end of the central leg, has a predetermined angle, neither 0 nor 180 degrees, to the length direction of the central leg, and extends into a direction not interfering with the driving legs. In making the piezoelectric device smaller and thinner, this configuration avoids interference between a support point on the central leg, provided for supporting the vibration element, and conductive electrodes, improves insulation between the conductive electrodes, and reduces the generation of short-circuits between the conductive electrodes. | 01-27-2011 |
20110266925 | RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE COMPENSATING LAYER - An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer. | 11-03-2011 |
20110273061 | METHOD AND APPARATUS FOR MANUFACTURING A RESONATING STRUCTURE - Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating environmental changes. | 11-10-2011 |
20120206019 | PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer sequentially formed on the substrate. The substrate has a linear thermal expansion coefficient higher than that of the piezoelectric layer, and the piezoelectric layer includes a polycrystalline body having an in-plane stress in a compressive direction. Thus, the piezoelectric element realizes the piezoelectric layer having a high orientation in a polarization axis direction, high proportionality of a displacement amount with respect to an applied voltage, and a large absolute value of the displacement amount. | 08-16-2012 |
20120217846 | Crystal Device - A surface-mount type crystal device is provided, having a rectangular crystal element including an excitation part and a frame surrounding the excitation part, wherein the frame has sides respectively along a first and a second directions intersected with each other; a rectangular base, bonded to a principal plane of the frame, having sides respectively along the first and the second directions; a rectangular lid, bonded to another principal plane of the frame, having sides respectively along the first and the second directions. A first and a second bonding materials, respectively corresponding to a thermal expansion coefficient in the first and the second directions of the crystal element, are respectively applied on the sides of the first and the second directions of each of the frame of a crystal material, the base and the lid. A second bonding material is different from the first bonding material. | 08-30-2012 |
20120267985 | FLEXURAL VIBRATION PIECE AND OSCILLATOR USING THE SAME - A flexural vibration piece includes a flexural vibrator that has a first region on which a compressive stress or a tensile stress acts due to vibration and a second region having a relationship in which a tensile stress acts thereon when a compressive stress acts on the first region and a compressive stress acts thereon when a tensile stress acts on the first region, and performs flexural vibration in a first plane. The flexural vibration piece also includes a heat conduction path, in the vicinity of the first region and the second region, that is formed of a material having a thermal conductivity higher than that of the flexural vibrator and thermally connects between the first region and the second region. | 10-25-2012 |
20120313487 | ULTRASONIC SENSOR - Disclosed herein is an ultrasonic sensor, including: a conductive case having a groove disposed at a bottom surface thereof; a piezoelectric element inserted into the groove and fixed to the groove by a conductive adhesive; a temperature compensation capacitor disposed on a top of the piezoelectric element, electrically connected to the piezoelectric element, and fixed to the case by a non-conductive adhesive; a first lead wire led-in from an outside of the case and electrically connected to one surface of the temperature compensation capacitor and the case; and a second lead wire lead-in from the outside of the case and electrically connected to the other surface of the temperature compensation capacitor, whereby the piezoelectric element which is easily damaged can be protected by the temperature compensation capacitor, without using the separate substrate for fixing the temperature compensation capacitor. | 12-13-2012 |
20120313488 | CRYSTAL DEVICE - A crystal device is provided, in which a peeling of a bonding material is prevented by using the bonding material having a thermal expansion coefficient which is between the coefficients in a first direction and a second direction of a bonding surface of a crystal element. A crystal device includes a rectangular crystal element formed with a crystal material that includes an excitation part and a frame surrounding the excitation part. The device further includes a rectangular base bonded to a principal surface of the frame, and a lid bonded to another principal surface of the frame; and the frame, the base and the lid have edges respectively along a first direction and a second direction intersecting with the first direction. The bonding material is applied having a thermal expansion coefficient that is between the coefficients in the first direction and second direction of the crystal element. | 12-13-2012 |
20130015747 | RESONATOR DEVICE INCLUDING ELECTRODE WITH BURIED TEMPERATURE COMPENSATING LAYER - An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer. | 01-17-2013 |
20130049545 | RESONATOR DEVICE INCLUDING ELECTRODES WITH BURIED TEMPERATURE COMPENSATING LAYERS - An acoustic resonator includes a substrate and a first composite electrode disposed over the substrate. The first composite electrode includes first and second electrically conductive layers and a first temperature compensating layer disposed between the first and second electrically conductive layers. The second electrically conductive layer forms a first electrical contact with the first electrically conductive layer on at least one side of the first temperature compensating layer, and the first electrical contact electrically shorts a first capacitive component of the first temperature compensating layer. | 02-28-2013 |
20130099629 | Temperature Compensation in a Semiconductor Micromechanical Resonator Via Charge Carrier Depletion - A semiconductor resonator has a substrate with a thickness extending between a first end and a second end and a pn-junction along the thickness of the substrate forming a free charge carrier depletion region. In another embodiment, a semiconductor resonator has a substrate with a crystal lattice doped at degenerate levels such that the flow of free charge carriers can be minimized. A method of compensating a temperature coefficient of a semiconductor resonator by creating a pn-junction based free charge carrier depletion region within a thickness of a substrate of the resonator is also disclosed. | 04-25-2013 |
20130099630 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: an electrode that excites an acoustic wave and is located on a substrate; and a silicon oxide film that is located so as to cover the electrode and is doped with an element or molecule displacing O in a Si—O bond, wherein the element or molecule is F, H, CH | 04-25-2013 |
20130106246 | TEMPERATURE-COMPENSATED MICROMECHANICAL RESONATOR | 05-02-2013 |
20130134835 | ULTRASONIC SENSOR AND MANUFACTURING METHOD THEREOF - There is provided an ultrasonic sensor including: a piezoelectric vibration element; and a capacitor integrally formed with the piezoelectric vibration element. | 05-30-2013 |
20130181579 | BULK ACOUSTIC WAVE RESONATOR - Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer. | 07-18-2013 |
20130249351 | VIBRATION DEVICE - A vibration device includes a semiconductor device, a first electrode and a second electrode located in a first surface of the semiconductor device, a vibration element, a third electrode and a fourth electrode located in a first surface of the vibration element, a first connection section that connects the first electrode and the third electrode, and a second connection section that connects the second electrode and the fourth electrode. The semiconductor device and the vibration element have mutually different thermal expansion coefficients. The vibration element has a coupling section located between the third electrode and the fourth electrode, and the coupling section has at least one bend section located between the third electrode and the fourth electrode. | 09-26-2013 |
20140117815 | TEMPERATURE COMPENSATED RESONATOR DEVICE HAVING LOW TRIM SENSITIVY AND METHOD OF FABRICATING THE SAME - A temperature compensated bulk acoustic wave (BAW) resonator device has low trim sensitivity for providing an accurate resonant frequency. The BAW resonator device includes a first electrode deposited on a substrate, a piezoelectric layer deposited on the first electrode, a second electrode deposited on the piezoelectric layer, and a mirror pair deposited on the second electrode. At least one of the first electrode and the second electrode includes an electrode layer, and a temperature compensating layer configured to compensate for a temperature coefficient of at least the piezoelectric layer. | 05-01-2014 |
20140132116 | ACOUSTIC WAVE DEVICE AND METHOD OF FABRICATING THE SAME - An acoustic wave device includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film, at least one of the lower electrode and the upper electrode including a first conductive film and a second conductive film formed on the first conductive film; an insulating film sandwiched between the first conductive film and the second conductive film and having a temperature coefficient of an elastic constant opposite in sign to a temperature coefficient of an elastic constant of the piezoelectric film; and a third conductive film formed on edge surfaces of the insulating film and the second conductive film and causing electrical short circuits between the first conductive film and the second conductive film. | 05-15-2014 |
20140152152 | ACOUSTIC RESONATOR COMPRISING TEMPERATURE COMPENSATING LAYER AND PERIMETER DISTRIBUTED BRAGG REFLECTOR - An acoustic resonator structure includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed on the bottom electrode, a top electrode disposed on the piezoelectric layer, a cavity disposed beneath the bottom electrode, and a temperature compensating feature. The temperature compensating feature has a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric and electrode layers. The acoustic resonator structure further includes an acoustic reflector disposed over the substrate around a perimeter of the cavity. The acoustic reflector includes a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. | 06-05-2014 |
20140159548 | ACOUSTIC RESONATOR COMPRISING COLLAR AND ACOUSTIC REFLECTOR WITH TEMPERATURE COMPENSATING LAYER - An acoustic resonator structure includes an acoustic reflector over a cavity formed in a substrate, the acoustic reflector including a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material. The acoustic resonator further includes a bottom electrode on the layer of low acoustic impedance material, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a collar formed outside a main membrane region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode. The collar has an inner edge substantially aligned with a boundary of or overlapping the main membrane region. The layer of the low acoustic impedance material includes a temperature compensating material having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the bottom electrode and the top electrode. | 06-12-2014 |
20140292152 | TEMPERATURE COMPENSATING ELECTRODES - A resonator device in which a piezoelectric material is disposed between two electrodes. At least one of the electrodes is formed of a nickel-titanium alloy having equal portions nickel and titanium. | 10-02-2014 |
20140292153 | TEMPERATURE DRIFT COMPENSATION OF MEMS RESONATORS - A resonator device comprising a piezoelectric material and at least one electrode, the device also provided with a material with a positive coefficient of stiffness, wherein the material is disposed in the device as an electrode or as a separate layer adjacent the piezoelectric material formed as one or more layers in the device. The material that performs the temperature compensating function is selected from the group consisting of ferromagnetic metal alloys, shape-memory metal alloys, and polymers, wherein the selected material has a temperature coefficient that varies with the relative amounts of the individual constituents of the compositions and wherein the composition is selected to provide the material with the positive coefficient of stiffness. | 10-02-2014 |
20140306580 | METHOD AND APPARATUS FOR MANUFACTURING A RESONATING STRUCTURE - Aspects of the subject disclosure include, for example, constructing a mechanical resonating structure by applying an active layer on a surface of a compensating structure, wherein the compensating structure comprises one or more materials having an adaptive resistance to deform that reduces a variance in a resonating frequency of the mechanical resonating structure, wherein at least the active layer and the compensating structure form a mechanical resonating structure having a plurality of layers of materials, and wherein a thickness of each of the plurality of layers of materials results in a plurality of thickness ratios therebetween. Other embodiments are disclosed. | 10-16-2014 |
20140361664 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: a piezoelectric film located on a substrate; a lower electrode and an upper electrode facing each other across the piezoelectric film; a temperature compensation film located on a surface, which is opposite to the piezoelectric film, of at least one of the lower electrode and the upper electrode and having a temperature coefficient of elastic constant opposite in sign to a temperature coefficient of elastic constant of the piezoelectric film; and an additional film located on a surface of the temperature compensation film opposite to the piezoelectric film and having an acoustic impedance greater than an acoustic impedance of the temperature compensation film. | 12-11-2014 |
20150326200 | Bulk Acoustic Wave Devices with Temperature-Compensating Niobium Alloy Electrodes - A bulk acoustic wave (BAW) resonator having a first electrode, a second electrode, and a piezoelectric layer between the first electrode and the second electrode. The first electrode is of a first electrode material. The second electrode is of a second electrode material. The piezoelectric layer is of a piezoelectric material doped with at least one rare earth element. The BAW resonator has a resonant frequency dependent at least in part on respective thicknesses and materials of the first electrode, the second electrode and the piezoelectric layer. The resonant frequency has a temperature coefficient. At least one of the first electrode and the second electrode includes a niobium alloy electrode material that, relative to molybdenum as the electrode material, reduces the temperature coefficient of the resonant frequency of the BAW resonator. | 11-12-2015 |
20150341015 | ELECTRICAL RESONATOR - An acoustic resonator comprises a substrate comprising a cavity. The electrical resonator comprises a resonator stack suspended over the cavity. The resonator stack comprises a first electrode; a second electrode; a piezoelectric layer; and a temperature compensating layer comprising borosilicate glass (BSG). | 11-26-2015 |
20160182011 | ACOUSTIC RESONATOR HAVING INTEGRATED LATERAL FEATURE AND TEMPERATURE COMPENSATION FEATURE | 06-23-2016 |
20160380612 | CRYSTAL VIBRATION DEVICE - Provided is a crystal vibration device in which it is difficult to transfer heat to a temperature-sensitive element and a crystal vibrator. A crystal vibration device | 12-29-2016 |