Patents - stay tuned to the technology

Inventors list

Assignees list

Classification tree browser

Top 100 Inventors

Top 100 Assignees


Using organometallic or organosilicon intermediate

Subclass of:

264 - Plastic and nonmetallic article shaping or treating: processes

264603000 - OUTSIDE OF MOLD SINTERING OR VITRIFYING OF SHAPED INORGANIC ARTICLE OR PREFORM

Patent class list (only not empty are listed)

Deeper subclasses:

Class / Patent application numberDescriptionNumber of patent applications / Date published
264624000 Using organometallic or organosilicon intermediate 13
20090250850PROCESS FOR PREPARING ADVANCED CERAMIC POWDERS USING ONIUM DICARBOXYLATES - A process of producing a ceramic powder including providing a plurality of precursor materials in solution, wherein each of the plurality of precursor materials in solution further comprises at least one constituent ionic species of a ceramic powder, combining the plurality of precursor materials in solution with an onium dicarboxylate precipitant solution to cause co-precipitation of the ceramic powder precursor in a combined solution; and separating the ceramic powder precursor from the combined solution. The process may further include calcining the ceramic powder precursor.10-08-2009
20100230870METHOD FOR PRODUCING ALUMINUM TITANATE CERAMIC - A method for producing an aluminum titanate ceramic, which comprises subjecting, to forming, a raw material for aluminum titanate formation, containing Na09-16-2010
20140077425POROUS METAL OXIDE AND METAL OXIDE-ORGANIC NANOCOMPOSITES, METHODS OF MAKING AND USES THEREOF - The disclosure provides relates to compositions and methods for water treatment. It also addresses a method for synthesizing TiO03-20-2014
20160068443METHODS FOR PRODUCING A SILICON-CONTAINING ZIRCONIA CALCINED BODY AND A SILICON-CONTAINING ZIRCONIA SINTERED BODY - A method for producing a silicon-containing zirconia calcined body includes wet mixing a mixture to obtain a mixed slurry, with the mixture including a silicon-containing zirconia powder, a sodium carbonate powder, a tetraethoxysilane, and an adhesive; drying the mixed slurry to obtain a caked mass; grinding and sieving the caked mass to obtain a mixed powder; pressurizing and shaping the mixed powder to obtain a blank; and calcining the blank in an environment at 900-1200° C. to obtain a silicon-containing zirconia calcined body. The silicon-containing zirconia calcined body can be sintered at 1415-1450° C. into a silicon-containing zirconia sintered body, with a shrinkage ratio during sintering the silicon-containing zirconia calcined body into the silicon-containing zirconia sintered body being 22-31%.03-10-2016
264625000 Forming carbide or carbonitride containing product 5
20080265471Polycrystalline Sic Electrical Devices and Methods for Fabricating the Same - The present invention relates to a to novel electrical devices fabricated from polycrystalline silicon carbide (SiC) and methods for forming the same. The present invention provides a method for fabricating polycrystalline silicon carbide (SiC) products infiltrated with SiC-containing preceramic precursor resins to substantially mask the deleterious effects of trace contaminants, typically nitrogen and aluminum, while reducing operative porosity and enhancing manufacturing ease.10-30-2008
20100289192Methods for Producing High-Performance Silicon Carbide Fibers, Architectural Preforms, and High-Temperature Composite Structures - Methods are disclosed for producing architectural preforms and high-temperature composite structures containing high-strength ceramic fibers with reduced preforming stresses within each fiber, with an in-situ grown coating on each fiber surface, with reduced boron within the bulk of each fiber, and with improved tensile creep and rupture resistance properties tier each fiber. The methods include the steps of preparing an original sample of a preform formed from a pre-selected high-strength silicon carbide ceramic fiber type, placing the original sample in a processing furnace under a pre-selected preforming stress state and thermally treating the sample in the processing furnace at a pre-selected processing temperature and hold time in a processing gas having a pre-selected composition, pressure, and flow rate. For the high-temperature composite structures, the method includes additional steps of depositing a thin interphase coating on the surface of each fiber and forming a ceramic or carbon-based matrix within the sample.11-18-2010
20110148011POLYCRYSTALLINE SIC ELECTRICAL DEVICES AND METHODS FOR FABRICATING THE SAME - The present invention relates to a novel electrical devices fabricated from polycrystalline silicon carbide (SiC) and methods for forming the same. The present invention provides a method for fabricating polycrystalline silicon carbide (SiC) products infiltrated with SiC-containing preceramic precursor resins to substantially mask the deleterious effects of trace contaminants, typically nitrogen and aluminum, while reducing operative porosity and enhancing manufacturing ease.06-23-2011
20110175264High Toughness Ceramic Composites - A method of forming a sintered silicon carbide body includes mixing silicon carbide powder having an oxygen content of less than about 3 wt % and having a surface area in a range of between about 8 m07-21-2011
20140239559HIGH PRESSURE LOW TEMPERATURE HOT PRESSING METHOD FOR PRODUCING A ZIRCONIUM CARBIDE CERAMIC - A method for producing monolithic Zirconium Carbide (ZrC) is described. The method includes raising a pressure applied to a ZrC powder until a final pressure of greater than 40 MPa is reached; and raising a temperature of the ZrC powder until a final temperature of less than 2200° C. is reached.08-28-2014
264626000 Forming nitride or oxynitride containing product 3
20140124991METHODS FOR THREADING SINTERABLE MATERIALS AND RELATED APPARATUS AND SYSTEMS - Methods for threading ceramic materials, such as ceramic materials used for spinal implants or other biomedical implants. In some implementations, an expected rate of shrinkage of the block upon undergoing a firing process may be determined. A scaling factor may then be applied using the expected rate of shrinkage to select a tap having a size larger than a desired thread size. A green block may then be tapped with the selected tap to form a threaded opening in the green block. The block may be machined in order to remove cracks caused by the tapping process and/or to form the block into a desired shape/size. The green block may then be fired, which may result in a reduction of a size of the block and a size of the threaded opening.05-08-2014
20150097321METHOD FOR MAKING SUPER-HARD CONSTRUCTIONS - A method of making a construction comprising a polycrystalline super-hard structure joined to a side surface of an elongate substrate. The method includes: providing a vessel configured for an ultra-high pressure, high temperature furnace, the vessel having an elongate cavity for containing a pre-sinter assembly and defining a longitudinal axis, the cavity having opposite ends connected by a cavity wall. The pre-sinter assembly comprises the substrate, an aggregation comprising a plurality of super-hard grains arranged over at least a part of the side surface of the substrate, and a spacer structure configured for spacing the substrate apart from the cavity wall. The spacer structure comprises material having a Young's modulus of at least 300 GPa. The method further includes inserting the pre-sinter assembly into the cavity, the substrate being substantially longitudinally aligned and the spacer structure arranged between the side surface of the substrate and the cavity wall; applying a force to the pre-sinter assembly and heating it to a temperature, the force being sufficient to generate a pressure within the vessel for sintering the aggregation at the temperature, and providing the construction.04-09-2015
20150115507METHOD OF MAKING HIGH PURITY POLYCRYSTALLINE ALUMINUM OXYNITRIDE BODIES USEFUL IN SEMICONDUCTOR PROCESS CHAMBERS - A method of making high purity crystalline AlON bodies by synthesizing and calcining AlON powders having less than 80 ppm Si, Mg, Ca, Na, and K impurities. The AION powders are milled to reduce the particle size of the AlON powders using a high purity milling media. An AlON body is formed from the milled AlON powders. Such AlON bodies are particularly suitable for semiconductor process chamber components.04-30-2015
264627000 Forming fiber 1
20130082426METHOD FOR FABRICATING CERAMIC MATERIAL - A method for a fabricating a ceramic material includes providing a mixture of a reactive metallic filler material with a preceramic polysilazane material. The preceramic polysilazane material is then polymerized to form a green body. The green body is then thermally treated in an environment that is substantially free of oxygen to convert the polymerized preceramic polysilazane material into a ceramic material that includes at least one nitride phase that is a reaction product of the reactive metallic filler material and a preceramic polysilazane material.04-04-2013

Patent applications in all subclasses Using organometallic or organosilicon intermediate

Website © 2025 Advameg, Inc.