| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257796000 | With heat sink embedded in encapsulant | 11 |
| 20080237898 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, HEAT SINK, SEMICONDUCTOR CHIP, INTERPOSER SUBSTRATE, AND GLASS PLATE - A semiconductor device of the present invention includes: a laminate structure, including a semiconductor chip, partially sealed with a resin; and a stress relief section for relieving a stress during resin sealing, provided as a convex section including a plain top surface on an uppermost section of the laminate structure, the stress relief section being provided in an annular shape on a peripheral region of the uppermost section so as to come into contact with the sealing resin. This makes it possible to improve the manufacturing yield of the semiconductor device in which the member of the uppermost section is exposed. | 10-02-2008 |
| 20090057929 | SEMICONDUCTOR DEVICE - A power module includes: an encapsulation-target portion having at least one semiconductor element; and an encapsulation member that has first and second planes between which the encapsulation-target portion is interposed, and that encapsulates the encapsulation-target portion. The encapsulation member has, on the at least one semiconductor element, at least one opening that exposes part of a surface of the encapsulation-target portion the surface being on a side of the first plane. Thus, a semiconductor device of which size can be reduced can be provided. | 03-05-2009 |
| 20090096115 | Semiconductor package and method for fabricating the same - A semiconductor package and a method for fabricating the same are disclosed. The present invention discloses mounting and electrically connecting a semiconductor chip to a chip carrier, forming an interfacial layer or a heat-dissipating member having the interfacial layer on the semiconductor chip, and forming an encapsulant for covering the semiconductor chip, the interfacial layer or the heat dissipating member. The method further includes cutting the encapsulant along edges of the interfacial layer, and removing the redundant encapsulant on the interfacial layer so as to expose the semiconductor chip or the heat-dissipating member without forming burr or heavily wearing cutting tools. | 04-16-2009 |
| 20110291304 | METHOD OF MAKING MICROELECTRONIC PACKAGE USING INTEGRATED HEAT SPREADER STIFFENER PANEL AND MICROELECTRONIC PACKAGE FORMED ACCORDING TO THE METHOD - A method of making a microelectronic package, and a microelectronic package made according to the method. The method includes: bonding and thermally coupling a plurality of IC dies to an IHS panel to yield a die-carrying IHS panel; mounting the die-carrying IHS panel onto a substrate panel including a plurality of package substrates to yield a combination including the die-carrying IHS panel mounted to the substrate panel; and singulating the combination to yield a plurality of microelectronic packages, each of the packages including: an IHS component of the IHS panel, one of the plurality IC dies bonded and thermally coupled to said IHS component, and one of the plurality of package substrates, said IHS component and said one of the plurality of IC dies being mounted to said one of the plurality of package substrates to form said each of the packages. | 12-01-2011 |
| 20130056885 | ENCAPSULATED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An encapsulated semiconductor device includes: a first conduction path formative plate ( | 03-07-2013 |
| 20130270721 | ENHANCED PACKAGE THERMAL MANAGEMENT USING EXTERNAL AND INTERNAL CAPACITIVE THERMAL MATERIAL - An apparatus has external and/or internal capacitive thermal material for enhanced thermal package management. The apparatus includes an integrated circuit (IC) package having a heat generating device. The apparatus also includes a heat spreader having a first side that is attached to the IC package. The apparatus also includes capacitive thermal material reservoirs contacting the first side of the heat spreader. The capacitive thermal material reservoirs may be disposed laterally relative to the heat generating device. | 10-17-2013 |
| 20130300004 | Semiconductor Device and Method of Controlling Warpage in Semiconductor Package - A semiconductor device has a substrate. An insulating layer is formed over a surface of the substrate. A semiconductor die is mounted over the surface of the substrate. A channel is formed in the insulating layer around the semiconductor die. An underfill material is deposited between the semiconductor die and the substrate and in the channel. A heat spreader is mounted over the semiconductor die with the heat spreader thermally connected to the substrate. A thermal interface material is formed over the semiconductor die. The underfill material is deposited between the semiconductor die and the substrate along a first edge of the semiconductor die and along a second edge of the semiconductor die opposite the first edge. The channel extends partially through the insulating layer formed over the substrate with the insulating layer maintaining coverage over the substrate within a footprint of the channel. | 11-14-2013 |
| 20140167296 | METHODS OF FORMING CONFIGURABLE MICROCHANNELS IN PACKAGE STRUCTURES - Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods and structures may include forming a sacrificial microchannel material on a device, forming an overmold material on the sacrificial microchannel material, and vaporizing the sacrificial microchannel material to form microchannel structures in the overmold that are conformal to the surfaces of the device. | 06-19-2014 |
| 20160002520 | THERMALLY CONDUCTIVE SHEET, CURED PRODUCT THEREOF, AND SEMICONDUCTOR DEVICE - A thermally conductive sheet includes a thermosetting resin (A) and an inorganic filler material (B) which is dispersed in the thermosetting resin (A). In the thermally conductive sheet, when a pore diameter distribution is measured through mercury intrusion technique for the inorganic filler material (B) that is included in an incineration residue after a cured product of the thermally conductive sheet is heated at 700° C. for four hours and is incinerated, a pore diameter distribution curve, that is measured through the mercury intrusion technique and is plotted with a pore diameter R as a horizontal axis and a logarithmic derivative of a pore volume (dV/d log R) as a vertical axis, has a peak (P) in the range where the pore diameter R is greater than or equal to 1.0 μm and is less than or equal to 10.0 μm, and the peak (P) is configured of two or more overlapping peaks. | 01-07-2016 |
| 20160005677 | THERMALLY CONDUCTIVE SHEET, CURED PRODUCT THEREOF, AND SEMICONDUCTOR DEVICE - A thermally conductive sheet includes a thermosetting resin and an inorganic filler material. When a pore diameter distribution is measured through mercury intrusion technique for the inorganic filler material, a pore diameter distribution curve of the inorganic filler material has a first maximum value in the range where the pore diameter R is greater than or equal to 0.1 μm and less than or equal to 5.0 μm, and a second maximum value in the range where the pore diameter R is greater than or equal to 10 μm and less than or equal to 30 μm, and the difference between a second pore diameter at the second maximum value and a first pore diameter at the first maximum value is greater than or equal to 9.9 μm and less than or equal to 25 μm. | 01-07-2016 |
| 20160141187 | METHOD OF MANUFACTURING AN INTEGRATED CIRCUIT WITH IMPRINT, INTEGRATED CIRCUIT WITH IMPRINT, DEVICE FOR FORMING AN INTEGRATED CIRCUIT WITH IMPRINT AND VERIFICATION SYSTEM FOR AN INTEGRATED CIRCUIT WITH IMPRINT - According to various embodiments, a method of manufacturing an integrated circuit may include providing a film structure having at least one of at least one recess or at least one protrusion, and carrying out a film assisted molding process using the film structure to mold an electronic circuit, thereby forming a molding structure including a surface pattern in accordance with the film structure. | 05-19-2016 |
