| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257765000 | At least one layer of an alloy containing aluminum | 14 |
| 20080303162 | SEMICONDUCTOR DEVICE - A semiconductor device includes a layered structure including a first nitride semiconductor layer and a second nitride semiconductor layer that are sequentially formed over a substrate in this order. The second nitride semiconductor layer has a wider bandgap than the first nitride semiconductor layer. A first electrode and a second electrode are formed spaced apart from each other on the layered structure. A first insulating layer with a high breakdown field is formed in a region with electric field concentration between the first electrode and the second electrode over the layered structure. The first insulating layer has a higher breakdown field than air. | 12-11-2008 |
| 20080315425 | Semiconductor Devices and Methods for Fabricating the Same - Semiconductor devices and methods of fabricating the same are disclosed. An illustrated semiconductor device fabricating method includes forming a titanium and titanium-nitride (Ti/TiN) metal layer on a lower oxide layer; forming an aluminum metal layer on the Ti/TiN metal layer; forming an indium tin oxide (ITO) layer on the aluminum metal layer; and patterning the ITO layer, the aluminum metal layer, and the Ti/TiN metal layer by photolithography to form a metal layer pattern and to expose a surface of the lower oxide layer, thereby facilitating a process of filling inter-wiring spaces occurring between adjacent lines of a metal layer pattern by producing a metal layer pattern having a reduced aspect ratio. | 12-25-2008 |
| 20090065942 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal. | 03-12-2009 |
| 20090096108 | STRUCTURE AND METHODS OF FORMING CONTACT STRUCTURES - Methods and a structure. A method of forming contact structure includes depositing a silicide layer onto a substrate; depositing an electrically insulating layer over a first surface of the silicide layer; forming a via through the insulating layer extending to the first surface; depositing an electrically conductive layer covering a bottom and at least one vertical wall of the via; removing the conductive layer from the bottom; and filling the via with aluminum directly contacting the silicide layer. A structure includes: a silicide layer disposed on a substrate; an electrically insulating layer disposed over the silicide layer; an aluminum plug extending through the insulating layer and directly contacting the silicide layer; and an electrically conductive layer disposed between the plug and the insulating layer. Also included is a method where an aluminum layer grows selectively from a silicide layer and at least one sidewall of a trench. | 04-16-2009 |
| 20090218697 | ELECTRONIC DEVICE, METHOD OF MANUFACTURE OF THE SAME, AND SPUTTERING TARGET - In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor. | 09-03-2009 |
| 20100117240 | PROCESS FOR WET PASSIVATION OF BOND PADS FOR PROTECTION AGAINST SUBSEQUENT TMAH-BASED PROCESSING - A process for forming a protective layer at a surface of an aluminum bond pad. The aluminum bond pad is exposed to a solution containing silicon, ammonium persulfate and tetramethylammonium hydroxide, which results in the formation of the protective layer. This protective layer protects the bond pad surface from corrosion during processing of an imager, such as during formation of a color filter array or a micro-lens array. | 05-13-2010 |
| 20110156260 | PAD STRUCTURE AND INTEGRATED CIRCUIT CHIP WITH SUCH PAD STRUCTURE - An integrated circuit chip includes a substrate; a topmost metal layer overlying the substrate; and a pad in the topmost metal layer. A thickness of the pad is less than a thickness of the topmost metal layer. | 06-30-2011 |
| 20120091591 | DISPLAY DEVICE AND SPUTTERING TARGET FOR PRODUCING THE SAME - A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components. | 04-19-2012 |
| 20120098134 | CONNECTING MATERIAL, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When connecting with a conventional Zn/Al/Zn cladding material, thickness of a connecting part needs to be less than double an existing high-lead solder (about 100 μm) in order to make heat resistance in the connecting part at least equivalent to a level of the existing solder. Moreover, thickness of an Al layer needs to make as thick as possible in order to fully exhibit stress relaxation performance of the Al layer. | 04-26-2012 |
| 20130328204 | Solderless Die Attach to a Direct Bonded Aluminum Substrate - A DBA-based power device includes a DBA (Direct Bonded Aluminum) substrate. An amount of silver nanoparticle paste of a desired shape and size is deposited (for example by micro-jet deposition) onto a metal plate of the DBA. The paste is then sintered, thereby forming a sintered silver feature that is in electrical contact with an aluminum plate of the DBA. The DBA is bonded (for example, is ultrasonically welded) to a lead of a leadframe. Silver is deposited onto the wafer back side and the wafer is singulated into dice. In a solderless silver-to-silver die attach process, the silvered back side of a die is pressed down onto the sintered silver feature on the top side of the DBA. At an appropriate temperature and pressure, the silver of the die fuses to the sintered silver of the DBA. After wirebonding, encapsulation and lead trimming, the DBA-based power device is completed. | 12-12-2013 |
| 20140021619 | PAD STRUCTURE AND INTEGRATED CIRCUIT CHIP WITH SUCH PAD STRUCTURE - An integrated circuit chip includes a substrate; at least one inter-metal dielectric layer over the substrate; a topmost metal layer overlying the inter-metal dielectric layer; a bonding pad in the topmost metal layer, the bonding pad comprising a central thinner portion and a peripheral thicker portion surrounding the central thinner portion; and a passivation layer covering the peripheral thicker portion. | 01-23-2014 |
| 20150054161 | Semiconductor Bonding Structure and Process - A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material. | 02-26-2015 |
| 20160163670 | Semiconductor Bonding Structure and Process - A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material. | 06-09-2016 |
| 20180025971 | SIMULTANEOUS FORMATION OF LINER AND METAL CONDUCTOR | 01-25-2018 |
