| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257707000 | Directly attached to semiconductor device | 22 |
| 20090085195 | Method of Making Microelectronic Package Using Integrated Heat Spreader Stiffener Panel and Microelectronic Package Formed According to the Method - A method of making a microelectronic package, and a microelectronic package made according to the method. The method includes: bonding and thermally coupling a plurality of IC dies to an IHS panel to yield a die-carrying IHS panel; mounting the die-carrying IHS panel onto a substrate panel including a plurality of package substrates to yield a combination including the die-carrying IHS panel mounted to the substrate panel; and singulating the combination to yield a plurality of microelectronic packages, each of the packages including: an IHS component of the IHS panel, one of the plurality IC dies bonded and thermally coupled to said IHS component and one of the plurality of package substrates, said IHS component and said one of the plurality of IC dies being mounted to said one of the plurality of package substrates to form said each of the packages. | 04-02-2009 |
| 20090085196 | INTEGRATED CIRCUIT CHIP MANUFATURING METHOD AND SEMICONDUCTOR DEVICE - This invention moderates the difficulty in chip formation or packaging which accompanies thinning of a semiconductor region where an integrated circuit is formed. An integrated circuit chip manufacturing method includes a first bonding step of bonding a first support member to a first surface of a semiconductor substrate which has the first surface and a second surface and has a semiconductor region including an integrated circuit on a first surface side thereof, a thinning step of removing a second surface-side portion of the semiconductor substrate bonded to the first support member to leave the semiconductor region, thereby thinning the semiconductor substrate, a second bonding step of bonding a second support member to the second surface side of the thinned semiconductor substrate, and a chip forming step of forming chips by cutting the semiconductor region. | 04-02-2009 |
| 20090091021 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An insulating resin | 04-09-2009 |
| 20090140417 | Holistic Thermal Management System for a Semiconductor Chip - Various semiconductor chip thermal management systems and methods are disclosed. In one aspect, a method of manufacturing is provided that includes coupling a semiconductor chip to a substrate and coupling a diamond heat spreader that has a thermoelectric cooler to the semiconductor chip. A vapor chamber is coupled to the diamond heat spreader. | 06-04-2009 |
| 20090166852 | SEMICONDUCTOR PACKAGES WITH THERMAL INTERFACE MATERIALS - A method comprises providing a layer of nano particles between a semiconductor die and a slug; and sintering the layer of nano particles to provide thermal interface material to bond the semiconductor die to a heat spreader formed by the slug. The sintering temperature of the nano particles is around 50° C. to around 200° C. | 07-02-2009 |
| 20090236732 | THERMALLY-ENHANCED MULTI-HOLE SEMICONDUCTOR PACKAGE - A thermal-enhanced multi-hole semiconductor package is revealed, primarily comprising a substrate with a plurality of alignment holes, a chip disposed on the substrate, an internal heat sink attached to the chip, and an encapsulant. The internal hear sink has a plurality of alignment bars and a heat dissipation surface. The alignment bars are inserted into the alignment holes, but not fully occupying the alignment holes to provide a plurality of flowing channels therein. The encapsulant completely encapsulates the alignment bars through filling the flowing channels. Therefore, the internal heat sink can be aligned to the substrate and is integrally connected with the chip and the substrate utilizing a small amount of adhesive or without any adhesive to form a composite having high rigidity and strong adhesion. | 09-24-2009 |
| 20090267222 | Low Voltage Drop and High Thermal Performance Ball Grid Array Package - An integrated circuit (IC) package is provided. The IC package includes a substantially planar substrate having a plurality of contact pads on a first surface electrically connected through the substrate to a plurality of solder ball pads on a second surface of the substrate, an IC die having a first surface mounted to the first surface of the substrate, and a heat sink assembly coupled to a second surface of the IC die and to a first contact pad on the first surface of the substrate to provide a thermal path from the IC die to the first surface of the substrate. The IC die has a plurality of I/O pads electrically connected to the plurality of contact pads on the first surface of the substrate. The IC die is mounted to the first surface of the substrate in a flip chip orientation. | 10-29-2009 |
| 20090309213 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor chip is mounted on a heat sink disposed inside a through-hole of a wiring board, electrodes of the semiconductor chip and connecting terminals of the wiring board are connected by bonding wires, a sealing resin is formed to cover the semiconductor chip and the bonding wires, and solder balls are formed on the lower surface of the wiring board, thereby constituting the semiconductor device. The heat sink is thicker than the wiring board. The heat sink has a protruded portion protruding to outside from the side surface of the heat sink, the protruded portion is located on the upper surface of the wiring board outside the through-hole, and the lower surface of the protruded portion contacts to the upper surface of the wiring board. When the semiconductor device is manufactured, the heat sink is inserted from the upper surface side of the wiring board. | 12-17-2009 |
| 20090309214 | Circuit Module Turbulence Enhancement - Turbulence inducers are provided on circuit modules. Rising above a substrate or heat spreader surface, turbulence generators may be added to existing modules or integrated into substrates or heat spreaders employed by circuit modules constructed according to traditional or new technologies. | 12-17-2009 |
| 20100059878 | Stack Assemblies Containing Semiconductor Devices - The present invention provides a stack assembly comprising at least one semiconductor device | 03-11-2010 |
| 20110024896 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device that can reduce the mounting area thereof will be provided. A first metal plate is connected to a first power terminal of a power chip. A second metal plate facing the first metal plate is connected to a second power terminal of the power chip. An insulating cover coats the power chip from outside of the first and second metal plates. An exterior signal terminal connected to the signal terminal of the power chip is derived from an upper surface of the insulating cover. The first and second metal plate respectively includes first and second exterior electric power terminals derived from a lower surface of the insulating cover. The first and second exterior electric power terminals are bent to opposite directions. In a bending direction of the first exterior electric power terminal or the second exterior electric power terminal, the second exterior electric power terminal is not present on opposite side of the first exterior electric power terminal across the insulating cover, and the first exterior electric power terminal is not present on opposite side of the second exterior electric power terminal across the insulating cover. | 02-03-2011 |
| 20110133328 | SEMICONDUCTOR DEVICE HAVING HEAT RADIATING CONFIGURATION - A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes: a casing, a board and a semiconductor chip. The chip includes: an element part; a heat sink bonded to the element part; an insulting layer located on the heat sink so that the heat sink is located between the element part and the insulating layer; and a side wall insulating layer covering all of end faces of the heat sink. The semiconductor chip is located between the casing and the board, so that the insulating layer is directed to the casing to enable heat radiation from the heat sink toward the casing via the insulating layer. | 06-09-2011 |
| 20120098117 | POWER AND THERMAL DESIGN USING A COMMON HEAT SINK ON TOP OF HIGH THERMAL CONDUCTIVE RESIN PACKAGE - An apparatus and method of manufacture may be provided for a package that can be coupled to a common heat sink without external electrical isolation. The apparatus, for example, can include a semi-conductor die comprising at least one electronic device. The apparatus can also include a frame on which a bottom side of the die is mounted, a bottom side of the frame being configured to attach to a printed circuit board. The apparatus can further include a high thermal conductivity resin molded onto a top side of the die. | 04-26-2012 |
| 20120168932 | SEMICONDUCTOR ASSEMBLY THAT INCLUDES A POWER SEMICONDUCTOR DIE LOCATED ON A CELL DEFINED BY FIRST AND SECOND PATTERNED POLYMER LAYERS - A semiconductor assembly includes a first subassembly comprising a heat sink and a first patterned polymer layer disposed on a surface of the heat sink to define an exposed portion of the first surface. The exposed portion of the first surface extends radially inward along the heat sink surface from the first layer. The subassembly also includes a second patterned polymer layer disposed on a radially outer portion of the first patterned polymer layer. The first and second layers define a cell for accommodating a power semiconductor die. Solder material is disposed on the exposed portion of the heat sink surface and in the cell. A power semiconductor die is located within the cell on a radially inward portion of the first layer and thermally coupled to the heat sink by the solder material. | 07-05-2012 |
| 20140239480 | ELECTRONIC DEVICES ASSEMBLED WITH THERMALLY INSULATING LAYERS - Provided herein are electronic devices assembled with thermally insulating layers. | 08-28-2014 |
| 20140239481 | ELECTRONIC DEVICES ASSEMBLED WITH THERMALLY INSULATING LAYERS - Provided herein are electronic devices assembled with thermally insulating layers. | 08-28-2014 |
| 20140374895 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of semiconductor elements each having a front surface and a back surface; a front surface-side heatsink that is positioned on a front-surface side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a back surface-side heatsink that is positioned on a back surface-side of the semiconductor elements and dissipates heat generated by the semiconductor elements; a sealing material that covers the semiconductor device except for a front surface of the front surface-side heatsink and a back surface of the back surface-side heatsink; a primer that is coated on at least one of the front surface-side heatsink and the back surface-side heatsink and improves contact with the sealing member; and a protruding portion positioned between the plurality of semiconductor elements, on at least one of the back surface of the front surface-side heatsink and the front surface of the back surface-side heatsink. | 12-25-2014 |
| 20160005717 | SEMICONDUCTOR DEVICE WITH FACE-TO-FACE CHIPS ON INTERPOSER AND METHOD OF MANUFACTURING THE SAME - A method of making a semiconductor device with face-to-face chips on interposer includes the step of attaching a chip-on-interposer subassembly on a heat spreader with the chip inserted into a cavity of the heat spreader so that the heat spreader provides mechanical support for the interposer. The heat spreader also provides thermal dissipation, electromagnetic shielding and moisture barrier for the enclosed chip. In the method, a second chip is also electrically coupled to a second surface of the interposer and an optional second heat spreader is attached to the second chip. | 01-07-2016 |
| 20160122503 | RESIN COMPOSITION FOR THERMALLY CONDUCTIVE SHEET, BASE MATERIAL-ATTACHED RESIN LAYER, THERMALLY CONDUCTIVE SHEET, AND SEMICONDUCTOR DEVICE - A resin composition for a thermally conductive sheet includes a thermosetting resin and a filler dispersed in the thermosetting resin. The filler includes secondary agglomerated particles satisfying the following conditions: a void is formed in the central portion; a communicating pore which begins from the void and communicates with the outer surface of the secondary agglomerated particle is formed; and the ratio of the average pore diameter of the communicating pores to the average void diameter of the voids is equal to or more than 0.05 and equal to or less than 1.0. | 05-05-2016 |
| 20160148902 | THERMALLY-ENHANCED THREE DIMENSIONAL SYSTEM-IN-PACKAGES AND METHODS FOR THE FABRICATION THEREOF - Embodiments of three dimensional (3D) System-in-Package (SiPs) and methods for producing 3D SiPs having improved heat dissipation capabilities are provided. In one embodiment, the 3D SiP includes a heat-dissipating structure having a first principal surface and a second principal surface opposite the first principal surface. The backside of a first microelectronic device is disposed adjacent and thermally coupled to the first principal surface of the heat-dissipating structure, while the backside of a second microelectronic device is disposed adjacent and thermally coupled to the second principal surface of the heat-dissipating structure. During operation of the 3D SiP, heat generated by the microelectronic devices is conductively transferred to and dissipated through the heat-dissipating structure. | 05-26-2016 |
| 20160254209 | POWER-MODULE SUBSTRATE WITH HEAT-SINK AND MANUFACTURING METHOD THEREOF | 09-01-2016 |
| 20160379912 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device provided with a metal base, a frame-shaped resin case adhered to the metal base, a semiconductor chip having a main electrode and being disposed inside the resin case, a main terminal having an internal end which is electrically connected to the main electrode of the semiconductor chip, integrally fixed to the resin case, and exposed inside the resin case and an external end exposed outside the resin case, a heat dissipation member which is placed, in contact with the metal base, between the metal base and the internal end of the main terminal, and has higher thermal conductivity than that of the resin case. | 12-29-2016 |
