Class / Patent application number | Description | Number of patent applications / Date published |
257699000 | Housing entirely of metal except for feedthrough structure | 6 |
20080246140 | SEMICONDUCTOR DEVICE - A frame-shaped sidewall is provided on a metallic base plate surrounding a semiconductor element arranged on the metallic base plate, a first dielectric plate is arranged on one side of the semiconductor element and a first circuit pattern is formed on its surface, a second dielectric plate is arranged on another side of the semiconductor element and a second circuit pattern is formed and the first and the second dielectric plate. Power supply portions are provided on a part of the sidewall, through which a first or a second band-shaped conductors is penetrating. A relay post is provided on the dielectric plate. The first band-shaped conductor is connected to the circuit pattern by an interconnection via the relay post. | 10-09-2008 |
20090008769 | SEMICONDUCTOR MODULE - A semiconductor module is disclosed. One embodiment provides a first electrically conductive carrier composed of a first material, a second electrically conductive carrier composed of the first material, an electrically insulating element composed of a second material, which connects the first carrier and the second carrier to one another, a first semiconductor substrate applied to the first carrier, a second semiconductor substrate applied to the second carrier, and an electrically conductive layer applied above the first carrier, the second carrier and the insulating element. The electrically conductive layer electrically conductively connects the first semiconductor substrate to the second semiconductor substrate. | 01-08-2009 |
20090160045 | WAFER LEVEL CHIP SCALE PACKAGING - A method for making back-to-front electrical connections in a wafer level chip scale packaging process is disclosed. A wafer containing a plurality of semiconductor chips is mounted on a package substrate. Each semiconductor chip in the plurality includes one or more electrodes on an exposed back side. Scribe lines between two or more adjacent chips on the wafer are removed to form relatively wide gaps. A conductive material is applied to the back side of the semiconductor chips and in the gaps. The conductive material in the gaps between two or more of the chips is then cut through leaving conductive material on the back side and on side walls of the two or more chips. As a result, the conductive material provides an electrical connection from the electrode on the back side of the chip to the front side of the chip. | 06-25-2009 |
20090206472 | COF PACKAGING STRUCTURE, METHOD OF MANUFACTURING THE COF PACKAGING STRUCTURE, AND METHOD FOR ASSEMBLING A DRIVER IC AND THE COF PACKAGING STRUCTURE THEREOF - A COF packaging structure includes a substrate, a first conductive foil, and a second conductive foil. The substrate has a first surface and a second surface opposite to the first surface. The first conductive foil is disposed on the first surface of the substrate and has a first designated pattern for bump bonding. The second conductive foil is disposed on the second surface of the substrate and has a second designated pattern, wherein the area of the second designated pattern is not smaller than the area of the first designated pattern. | 08-20-2009 |
20090294953 | INTEGRATED CIRCUIT PACKAGE MODULE AND METHOD OF THE SAME - The present invention discloses an integrated circuit module and method of manufacturing the same. The integrated circuit module includes a chip and a carrier supporting the chip. The carrier defines a front side and a back side, and the chip is disposed on the front side. The carrier includes a first insulating layer defining a first opening at the back side, a second insulating layer defining a second opening and a chip accommodation opening at the front side, and a patterned conductive layer sandwiched in between the first insulating layer and the second insulating layer. The patterned conductive layer is formed with an inner contacting portion exposed through the chip accommodation opening and an outer contacting portion exposed through the first opening and the second opening. The inner contacting portion is connected to the chip through the chip accommodation opening. The outer contacting portion is provided for electronically connecting an electronic device to the patterned conductive layer selectively at the front side through the second opening and at the back side through the first opening. | 12-03-2009 |
20120074559 | INTEGRATED CIRCUIT PACKAGE USING THROUGH SUBSTRATE VIAS TO GROUND LID - An integrated circuit package including a package substrate, a metal lid mounted to the package substrate, and a stack of two or more integrated circuit chips electrically connected to each other by through substrate vias. The stack of two or more integrated circuit chips is disposed within the metal lid and electrically mounted to the package substrate. An inner surface of a top of the metal lid is electrically connected to ground wires in the package substrate by the through substrate vias. The TSVs provide electromagnetic interference shielding. A conductive thermal interface material may also be used. An alternative embodiment includes a single integrated circuit chip using TSVs to ground the metal lid. | 03-29-2012 |