| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257691000 | Having power distribution means (e.g., bus structure) | 80 |
| 20080211081 | PLANAR MULTI SEMICONDUCTOR CHIP PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided are a planar multi semiconductor chip package in which a processor and a memory device are connected to each other via a through electrode and a method of manufacturing the planar multi semiconductor chip package. The planar multi semiconductor chip package includes: a substrate comprising a plurality of first circuit patterns on a first surface and a plurality of second circuit patterns on a second surface; a first semiconductor chip comprising a plurality of memory devices arranged on the substrate, wherein first memory devices surround at least a portion of second memory devices; a second semiconductor chip stacked on the first semiconductor chip and corresponding to the second memory devices; and a plurality of through electrodes arranged on the second memory devices and connecting the first and second semiconductor chips to the second circuit pattern of the substrate. | 09-04-2008 |
| 20080217755 | Systems and Methods for Providing Voltage Compensation in an Integrated Circuit Chip Using a Divided Power Plane - Systems and methods for providing power to on-chip components of an integrated circuit with improved uniformity through the use of a split power plane. One embodiment comprises a system having an integrated circuit chip, a power distribution network coupled to the integrated circuit chip, and a power plane coupled to the power distribution network. The power plane is divided into two or more separate sections, each of which is separately connected to the power distribution network. One or more power sources can be connected to the different power plane sections to apply different voltages to the different sections, thereby compensating for different resistances in the different portions of the power distribution network | 09-11-2008 |
| 20080217756 | POWER SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING IT - Power semiconductor arrangement and method for producing it. One embodiment provides a power semiconductor module. The power semiconductor module has a baseplate with an electrically conductive structure, a housing and a connection element. The connection element is led out from the housing generally perpendicular to the baseplate and is fixed to the housing, has a first connection configured for making contact with the electrically conductive structure, and has a second connection for making electrical contact with a circuit carrier. | 09-11-2008 |
| 20080217757 | Power Semiconductor module - A power semiconductor module is disclosed, including a plate-type substrate fitted with at least one component, and a base plate provided for dissipating heat from the component via the substrate. In at least one embodiment, a supporting apparatus, which keeps the substrate in thermal contact with the base plate, has a central pressure bolt adjoined by a plurality of stamps which extend in different directions and are intended to contact-connect the substrate, the individual stamps being at non-uniform distances from the substrate in the mechanically unloaded state of the pressure bolt. | 09-11-2008 |
| 20080237831 | MULTI-CHIP SEMICONDUCTOR PACKAGE STRUCTURE - A multi-chip semiconductor package structure is disclosed according to the present invention, the package structure includes: a carrier board having a first surface, a second surface, and at least an opening penetrating the first and second surfaces, the first and second surfaces each having electrically connecting pads; a semiconductor component received in the opening, the semiconductor component has a first active surface and a second active surface, and each of the first and second active surfaces has a plurality of electrode pads; a plurality of first conductive elements electrically connected to the electrically connecting pads of the first and second surfaces of the carrier board with the electrode pads of the first and second active surfaces of the semiconductor component; and a molding material formed on a portion of the first surface of the carrier board, the first active surface of the semiconductor component, a portion of the second surface of the carrier board, and the second active surface of the semiconductor component, and adapted to cover the first conductive elements; thereby forming a module structure for electrical connection with other modules or stacked devices, and further enhancing electrical functions. | 10-02-2008 |
| 20080237832 | MULTI-CHIP SEMICONDUCTOR PACKAGE STRUCTURE - A multi-chip semiconductor package structure is disclosed, including a carrier board having a first and an opposing second surfaces and formed with at least an opening penetrating the first and second surfaces, wherein a plurality of electrically connecting pads are formed on the first and second surfaces of the carrier board, respectively; a semiconductor component disposed in the opening, the semiconductor component having a first and a second active surfaces each with a plurality of electrode pads being formed thereon; a third semiconductor chip having an active surface and an inactive surface, the active surface having a plurality of electrode pads formed thereon for electrically connecting with the electrically connecting pads on the first surface of the carrier board and the electrode pads on the first active surface of the semiconductor component; and a fourth semiconductor chip having an active surface and an inactive surface, the active surface having a plurality of electrode pads formed thereon for electrically connecting with the electrically connecting pads on the second surface of the carrier board and the electrode pads on the second active surface of the semiconductor component, thereby providing a modularized structure for electrically connecting with other modules or stack devices and enhancing electrical functionality. | 10-02-2008 |
| 20080237833 | MULTI-CHIP SEMICONDUCTOR PACKAGE STRUCTURE - A multi-chip semiconductor package structure is disclosed according to the present invention. The package structure includes: a carrier board having a first surface, a second surface, and at least one opening penetrating the first and second surfaces, the first and second surfaces each being formed with a plurality of electrically connecting pads thereon; a semiconductor component received in the opening and having first and second active surfaces, the first and second active surfaces each being formed with a plurality of electrode pads thereon; a plurality of first conductive elements electrically connected to the electrically connecting pads on the second surface of the carrier board and the electrode pads on the second active surface of the semiconductor component; a semiconductor chip having an active surface and an inactive surface, the active surface having a plurality of electrode pads electrically connected to the electrically connecting pads on the first surface of the carrier board and the electrode pads on the first active surface of the semiconductor component; and a molding material formed on a portion of the second surface of the carrier board and the second active surface of the semiconductor component to cover the first conductive elements. The present invention provides a modularized structure capable of electrically connecting to other modules or stacked devices as well as enhancing electrical performance. | 10-02-2008 |
| 20080258292 | Macro-cell block and semiconductor device - There have been cases where the wirings are not led out when a semiconductor chip comprising a conventional macro is mounted on a package substrate. | 10-23-2008 |
| 20080265397 | Chip-Stacked Package Structure - A chip stacked package structure and applications are provided, wherein the chip stacked package structure comprises a substrate, a first chip, a patterned circuit layer and a second chip. The substrate has a first surface and an opposite second surface. The first chip with a first active area and an opposite first rear surface is electrically connected to first surface of substrate by a flip chip bonding process. The patterned circuit layer set on the dielectric layer is electrically connected to the substrate via a bonding wire. The second chip set on the patterned circuit layer has a second active area and a plurality of second pads formed on the second active area, wherein the second bonding pad is electrically connected to the patterned circuit layer. | 10-30-2008 |
| 20080290495 | Low noise semiconductor device - As a power feed route in a semiconductor chip, a power feed route which reduces antiresonance impedance in the frequency range of tens of MHz is to be realized thereby to suppress power noise in a semiconductor device. By inserting structures which raise the resistance in the medium frequency band into parts where the resistance is intrinsically high, such as power wiring in a semiconductor package and capacitor interconnecting electrode parts, the antiresonance impedance in the medium frequency band can be effectively reduced while keeping the impedance low at the low frequency. | 11-27-2008 |
| 20080303134 | Semiconductor package and method for fabricating the same - A semiconductor package and a method for fabricating the same are disclosed, which includes: providing a carrier board, forming a plurality of metal bumps on the carrier board, forming a metal layer on the carrier board to encapsulate the metal bumps, having at least one semiconductor chip electrically connected to the metal layer, then forming an encapsulant on the carrier board to encapsulate the semiconductor chip, and next removing the carrier board and the metal bumps to correspondingly form a plurality of grooves on surface of the encapsulant, wherein bottom and sides of the grooves are covered with the metal layer to allow electroconductive components to be effectively positioned in the grooves and completely bonded with the metal layer. | 12-11-2008 |
| 20080308923 | HIGH PERFORMANCE CHIP CARRIER SUBSTRATE - A multilayer chip carrier with increased space for power distribution PTHs and reduced power-related noise. In a multilayer chip carrier with two signal redistribution fanout layers, in addition to signal escape from near-edge signal pads at the first fanout layer, remaining signal pads are moved closer to the edge of the chip footprint. At the voltage layer below the first fanout layer, the remaining signal pads are moved again, closer to the edge of the chip footprint. In the second fanout layer, below the voltage layer, the remaining signal pads escape. The region where signal pads are moved provides increased space for power PTHs. | 12-18-2008 |
| 20080315392 | RF POWER TRANSISTOR PACKAGES WITH INTERNAL HARMONIC FREQUENCY REDUCTION AND METHODS OF FORMING RF POWER TRANSISTOR PACKAGES WITH INTERNAL HARMONIC FREQUENCY REDUCTION - A packaged RE power device includes a transistor having a control terminal and an output terminal and configured to operate at a fundamental operating frequency, an RF signal input lead coupled to the control terminal, and an RF signal output lead coupled to the output terminal. A harmonic reducer is coupled to the control terminal and/or the output terminal of the transistor and is configured to provide a short circuit or low impedance path from the control terminal and/or the output terminal to ground for signals at an Nth harmonic frequency of the fundamental operating frequency, where N>1. The device further includes a package that houses the transistor and the harmonic reducer, with the input lead and the output lead extending from the package. Multi-chip packages are also disclosed. | 12-25-2008 |
| 20080315393 | RF TRANSISTOR PACKAGES WITH INTERNAL STABILITY NETWORK AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH INTERNAL STABILITY NETWORKS - A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells. | 12-25-2008 |
| 20080315394 | SEMICONDUCTOR PACKAGE AND A METHOD FOR MANUFACTURING THE SAME - A semiconductor package and a method for manufacturing the same capable of supplying power easily without an increase in the number of pads for power supply. The semiconductor package includes a semiconductor chip having a plurality of pads including pads for power supply disposed in a center portion and an internal wiring disposed to be exposed to outside; an insulating film formed on the semiconductor to expose the pads for power supply and the internal wirings; and re-distribution lines formed on the insulating film to connect between the exposed portions of the pads for power supply and the internal wiring. | 12-25-2008 |
| 20080315395 | STACKED SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a stacked semiconductor package and a method for manufacturing the same. The method for manufacturing a stacked semiconductor package includes preparing a substrate formed with a seed metal layer; laminating semiconductor chips having via holes aligned with one another on the seed metal layer to form a semiconductor chip module; and growing a conductive layer inside of the via holes using the seed metal layer to form a conductive growth layer inside of the via holes. | 12-25-2008 |
| 20090001547 | High-Density Fine Line Structure And Method Of Manufacturing The Same - A high-density fine line structure mainly includes: two packaged semiconductor devices installed on a circuit layer and a power/ground layer formed therebetween, to realize the objective of high-density and ground connection. On an outer circuit, the part, which is not covered by a solder mask, can be made into a pad for electrically connecting with one of the semiconductor devices. The other semiconductor device may be installed on the fine line circuit layer. The fine line circuit layer, which is exposed, is to be a tin ball pad where a tin ball is filled. Electroplating rather than the etching method is used for forming the fine line circuit layer, and a carrier and a metal barrier layer, which are needed during or at the end of the manufacturing process, are removed to increase the wiring density for realizing the object of high-density. | 01-01-2009 |
| 20090001548 | Semiconductor package - A semiconductor package which includes: a semiconductor chip which includes a signal terminal for inputting and outputting electrical signals and a ground terminal; and a package substrate which includes a semiconductor chip mounting surface on which the semiconductor chip is mounted, and a terminal electrode forming surface on which a signal terminal electrode electrically connected to the signal terminal and a ground terminal electrode electrically connected to the ground terminal are arranged in an array pattern, wherein: on the semiconductor chip mounting surface, there is provided a first signal wiring connected to the signal terminal, a ground wiring connected to the ground terminal, and a ground conductive layer connected to the ground wiring and is provided in a planar pattern in an area excluding the forming area of the first signal wiring; on the terminal electrode forming surface, there is provided a second signal wiring connected to the signal terminal electrode, and a ground fine wiring connected to the ground terminal electrode; and the first signal wiring and the second signal wiring are connected via a conductor filled in a signal through hole penetrating the package substrate, and the ground conductive layer and the ground fine wiring are connected via a conductor filled in a ground through hole penetrating the package substrate. | 01-01-2009 |
| 20090008766 | High-Density Fine Line Structure And Method Of Manufacturing The Same - A high-density fine line structure mainly includes two semiconductor devices formed on the same surface, without stacking to each other. One of the semiconductor devices is directly installed on a fine line circuit layer, and the other semiconductor device is installed on the fine line circuit layer within a dielectric layer cavity. In the method of the present invention, electroplating rather than the etching method is used for forming the fine line circuit layer, and a carrier and a metal barrier layer, which are needed during or at the end of the manufacturing process, are removed to increase the wiring density for realizing the object of high-density. | 01-08-2009 |
| 20090026603 | Electronic component package and method of manufacturing same - An electronic component package includes: a base having a top surface and a side surface; and a plurality of layer portions stacked on the top surface of the base, each of the layer portions including at least one electronic component chip. The base includes a plurality of external connecting terminals, and a retainer for retaining the plurality of external connecting terminals. Each of the external connecting terminals has an end face located at the side surface of the base. At least one of a plurality of electronic component chips that the plurality of layer portions include is electrically connected to at least one of the external connecting terminals. | 01-29-2009 |
| 20090032932 | INTEGRATED CIRCUIT PACKAGING SYSTEM FOR FINE PITCH SUBSTRATES - An integrated circuit packaging system comprising: forming a substrate including; patterning a bonding pad on the substrate, patterning a first signal trace coupled to the bonding pad, patterning a second signal trace on the substrate, and connecting a pedestal on the second signal trace; mounting an integrated circuit on the substrate; and coupling an electrical interconnect between the integrated circuit, the bonding pad, the pedestal, or a combination thereof. | 02-05-2009 |
| 20090045499 | Semiconductor package having a plurality input/output members - A semiconductor package has a first substrate having a plurality of electrically conductive patterns formed thereon. A first semiconductor die is coupled to the plurality of conductive patterns. A second semiconductor die is coupled to the first semiconductor die by a die attach material. A third semiconductor die is coupled to the second semiconductor die by a die attach material. A second substrate having a plurality of electrically conductive patterns formed thereon is coupled to the third semiconductor die. A plurality of contacts is coupled to a bottom surface of the first substrate. A connector jack is coupled to the second substrate. A plurality of leads is coupled to the second semiconductor die by conductive wires. | 02-19-2009 |
| 20090057869 | CO-PACKAGED HIGH-SIDE AND LOW-SIDE NMOSFETS FOR EFFICIENT DC-DC POWER CONVERSION - A circuit package assembly is disclosed. The assembly includes a conductive substrate; a high-side n-channel metal oxide semiconductor field effect transistor (NMOSFET) having a source on a side facing a surface of the conductive substrate and in electrical contact therewith and a low-side standard n-channel metal oxide semiconductor field effect transistor (NMOSFET) having a drain on a side facing the conductive substrate and in electrical contact therewith. Co-packaging of high-side and low-side NMOSFETs in this manner may reduce package size and parasitic inductance and capacitance compared to conventional packaging. | 03-05-2009 |
| 20090057870 | STACKED SEMICONDUCTOR PACKAGE WITH A REDUCED VOLUME - The stacked semiconductor package includes a substrate having a plurality of connection pads; a first semiconductor chip disposed over the substrate, a plurality of first bonding pads disposed at an first of the first semiconductor chip, redistributions extending from the first bonding pads to the middle of the upper face; wires for electrically connecting the first bonding pads to the connection pads; and a second semiconductor chip disposed over the first semiconductor chip leaving the first bonding pads exposed, and a plurality of second bonding pads disposed over the second semiconductor chip body and connected to the redistributions in a flip-chip manner. The stacked semiconductor package with this structure has a decreased volume, thus making the stacked semiconductor package more compact. | 03-05-2009 |
| 20090079057 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device includes a carrier defining a surface with a semiconductor chip including an integrated circuit attached to the carrier. An insulation layer is disposed over the carrier, extending above the surface of the carrier a first distance at a first location and a second distance at a second location. A transition area is defined between the first and second locations, wherein the transition area defines a non-right angle relative to the surface. | 03-26-2009 |
| 20090079058 | Semiconductor substrate elastomeric stack - A reconfigurable high performance computer occupies less than 360 cubic inches and has an approximate compute power of 0.7 teraflops per second while consuming less than 1000 watts. The computer includes a novel stack of semiconductor substrate assemblies. Some semiconductor substrate assemblies involve field programmable gate array (FPGA) dice that are directly surface mounted, as bare die, to a semiconductor substrate. Other semiconductor substrate assemblies of the stack involve bare memory integrated circuit dice that are directly surface mounted to a semiconductor substrate. Elastomeric connectors interconnect adjacent semiconductor substrates proceeding down the stack. Tines of novel comb-shaped power bus bar assembly structures extend into the stack to supply DC supply voltages. The supply voltages are supplied from bus bars, through vias in the semiconductor substrates, and to the integrated circuits on the other side of the substrates. The power bus bars also serve as capacitors and guides for liquid coolant. | 03-26-2009 |
| 20090079059 | Integrated semiconductor substrate structure using incompatible processes - A plurality of FPGA dice is disposed upon a semiconductor substrate. In order both to connect thousands of signal interconnect lines between the plurality of FPGA dice and to supply the immense power required, it is desired that the substrate construction include two different portions, each manufactured using incompatible processes. The first portion is a signal interconnect structure containing a thin conductor layers portion characterized as having a plurality of thin, fine-pitch conductors. The second portion is a power connection structure that includes thick conductors and vertical through-holes. The through-holes contain conductive material and supply power to the FPGA dice from power bus bars located at the other side of the semiconductor substrate. The portions are joined at the wafer level by polishing the wafer surfaces within a few atoms of flatness and subsequent cleaning. The portions are then fusion bonded together or combined using an adhesive material. | 03-26-2009 |
| 20090091017 | Partitioned Integrated Circuit Package with Central Clock Driver - Disclosed are IC partitioned packaging and interconnection constructions that provide for improved distribution of power, ground, cross chip interconnections and clocks. | 04-09-2009 |
| 20090108435 | ASSEMBLY INCLUDING PLURAL THROUGH WAFER VIAS, METHOD OF COOLING THE ASSEMBLY AND METHOD OF FABRICATING THE ASSEMBLY - An assembly includes a chip including an integrated circuit, a casing including an integrated circuit and having an upper portion formed on a side of the chip and lower portion formed on another side of the chip, plural through-wafer vias (TWVs) for electrically connecting the integrated circuit of the chip and the integrated circuit of the casing, and a card connected to the casing for electrically connecting the casing to a system board. | 04-30-2009 |
| 20090127691 | Semiconductor Power Module Packages with Simplified Structure and Methods of Fabricating the Same - Provided are semiconductor power module packages, which are structurally simplified by bonding electrodes onto substrates, and methods of fabricating the same. An exemplary package includes a substrate and semiconductor chips disposed on a top surface of the substrate. Electrodes are bonded to the top surface of the substrate and electrically coupled to the semiconductor chips. Parts of the semiconductor chips are electrically coupled to parts of the electrodes by interconnection lines. An encapsulation unit covers the semiconductor chips, the electrodes, and the interconnection lines and exposes at least top surfaces of the electrodes. | 05-21-2009 |
| 20090184411 | SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THE SAME - Provided are semiconductor packages and methods of manufacturing the semiconductor package. The semiconductor packages may include a substrate including a chip pad, a redistributed line which is electrically connected to the chip pad and includes an opening. The semiconductor packages may also include an external terminal connection portion, and an external terminal connection pad which is disposed at an opening and electrically connected to the redistributed line. The present general inventive concept can solve the problem where an ingredient of gold included in a redistributed line may be prevented from being diffused into an adjacent bump pad to form a void or an undesired intermetallic compound. In a chip on chip structure, a plurality of bumps of a lower chip are connected to an upper chip to improve reliability, diversity and functionality of the chip on chip structure. | 07-23-2009 |
| 20090194864 | INTEGRATED MODULE FOR DATA PROCESSING SYSTEM - An apparatus for an integrated module. A silicon carrier with through-silicon vias has a plurality of die connected to a top side of the silicon carrier. In addition, a substrate is connected to a bottom side of the silicon carrier. The substrate is coupled to the plurality of die via the through-silicon vias. | 08-06-2009 |
| 20090200657 | 3D SMART POWER MODULE - A 3D smart power module for power control, such as a three phase power control module, includes a two sided printed circuit (PC) board with power semiconductor devices attached to one side and control semiconductor devices attached to the other side. The power semiconductor devices are die bonded to a direct bonded copper substrate which has a bottom surface exposed in the molded package. In one embodiment the module has 27 external connectors attached to one side of the PC board and arranged in the form of a ball grid array. | 08-13-2009 |
| 20090212413 | BALL GRID ARRAY PACKAGE LAYOUT SUPPORTING MANY VOLTAGE SPLITS AND FLEXIBLE SPLIT LOCATIONS - A die package generally including (A) ground paths routing a power ground from a ground power set of contact pads in a first conductive layer to a ground ring in a second conductive layer, (B) core paths routing a core voltage from a core power set of contact pads in the first conductive layer to a core ring in the second conductive layer, and (C) input/output voltage paths routing input/output voltages from an input/output power set of contact pads in the first conductive layer to an input/output ring in the second conductive layer, (i) the input/output ring surrounding the core ring, (ii) the ring being configured to power input and output circuits of the die, (iii) the input/output ring being split into ring segments isolated from each other and (iv) at least one particular ring segment having a length of less than a single connector pitch. | 08-27-2009 |
| 20090212414 | SEMICONDUCTOR CHIPS HAVING REDISTRIBUTED POWER/GROUND LINES DIRECTLY CONNECTED TO POWER/GROUND LINES OF INTERNAL CIRCUITS AND METHODS OF FABRICATING THE SAME - Provided are embodiments of semiconductor chips having a redistributed metal interconnection directly connected to power/ground lines of an internal circuit are provided. Embodiments of the semiconductor chips include an internal circuit formed on a semiconductor substrate. A chip pad is disposed on the semiconductor substrate. The chip pad is electrically connected to the internal circuit through an internal interconnection. A passivation layer is provided over the chip pad. A redistributed metal interconnection is provided on the passivation layer. The redistributed metal interconnection directly connects the internal interconnection to the chip pad through a via-hole and a chip pad opening, which penetrate at least the passivation layer. Methods of fabricating the semiconductor chip are also provided. | 08-27-2009 |
| 20090230540 | HIGH PERFORMANCE MULTI-CHIP FLIP CHIP PACKAGE - A structure and method of manufacture for an improved multi-chip semiconductor package that reduces package resistance to a negligible level, and offers superior thermal performance. Housing of multiple dies is facilitated by providing electrically isolated lead frames that are separated from a common base carrier by a non-conductive layer of laminating material. A silicon die is attached inside a cavity formed in each lead frame. Direct connection of the active surface of the silicon die to the printed circuit board is then made by an array of solder bumps that is distributed across the surface of each die as well as the edges of the lead frame adjacent to each die. | 09-17-2009 |
| 20090243079 | Semiconductor device package - Provided is a semiconductor device package including a substrate formed of a silicon (Si)-based material. The semiconductor device package includes a first substrate which comprises first and second principal planes which are opposite each other, and a substrate body layer disposed between the first and second principal planes, the substrate body layer being formed of a silicon (Si)-based material; and at least one first semiconductor device which is mounted on the first principal plane. | 10-01-2009 |
| 20090267215 | POWER MODULE SUBSTRATE, METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE, AND POWER MODULE - Disclosed is a power module having improved joint reliability. Specifically disclosed is a power module including a power module substrate wherein a circuit layer is brazed on the front surface of a ceramic substrate, a metal layer is brazed on the rear surface of the ceramic substrate and a semiconductor chip is soldered to the circuit layer. The metal layer is composed of an Al alloy having an average purity of not less than 98.0 wt. % but not more than 99.9 wt. % as a whole. In this metal layer, the Fe concentration in the side of a surface brazed with the ceramic substrate is set at less than 0.1 wt. %, and the Fe concentration in the side of a surface opposite to the brazed surface is set at not less than 0.1 wt. %. | 10-29-2009 |
| 20090283894 | SEMICONDUCTOR CHIP PACKAGE AND PRINTED CIRCUIT BOARD HAVING THROUGH INTERCONNECTIONS - A semiconductor chip package includes a signal interconnection penetrating a semiconductor chip and transmitting a signal to the semiconductor chip and a power interconnection and a ground interconnection penetrating the semiconductor and supplying power and ground to the semiconductor chip. The power interconnection and the ground interconnection are arranged to neighbor each other adjacent to the signal interconnection. | 11-19-2009 |
| 20090302451 | Semiconductor device having function circuits selectively connected to bonding wire - A semiconductor device includes a semiconductor chip, a wiring substrate, and wires. The semiconductor chip includes a first circuit, a second circuit having a function differing from that of the first circuit, a plurality of first pads disposed in a row along one side of the semiconductor chip and connected to the first circuit, and a plurality of second pads disposed between both of the first and second circuits and the first pads, and connected to the second circuit. The wiring substrate includes a plurality of terminals and the plurality of wires is connected between a plurality of terminals provided outside of the semiconductor chip, and ones of the first pads and the second pads. The wires are free from the other of the first pads and the second pads, and the plurality of the wires being not intersected to each other. | 12-10-2009 |
| 20100007005 | Semiconductor device - A semiconductor device suppresses a magnetic field caused by a current loop formed by a signal wiring and a return path wiring, to reduce transmission loss of a high-speed signal. The semiconductor device includes a signal current path connected from a signal pad to a first external terminal via a first bonding wire and an interposer, and a current return path connected from a second external terminal provided adjacent to the first external terminal to a second pad provided adjacent to the signal pad via the interposer essentially on the same plane. The signal current path and the current return path are positioned so that they intersect with each other, thereby reversing the direction of a loop through which the current flows, and as a result, magnetic fields caused by the current loop formed by the signal current path and the current return path cancel each other. | 01-14-2010 |
| 20100007006 | Integrated Semiconductor Outline Package - A transistor outline package is provided for a semiconductor integrated device suitable for use in a control module of an automobile for connection between a printed circuit board and a bus bar of such a module. The package includes a package housing, having a first end suitable for mounting to a PCB and which has a width. The package is also formed with a leadframe which includes a heat sink and ground plane blade suitable for connection to a bus bar, a plurality of connector leads suitable for connection to a PCB and at least one source tab lead suitable for connection to a module connector of such a control module. The plurality of connection leads and the source tab lead extend from the first end of the package housing side by side in the direction along and within the width of the first end of the package housing. | 01-14-2010 |
| 20100019373 | UNIVERSAL SUBSTRATE FOR SEMICONDUCTOR PACKAGES AND THE PACKAGES - A universal substrate for semiconductor packages and the package are revealed. The universal substrate comprises a substrate core, two peripheral rows of bonding fingers and a central row of redistribution fingers disposed on the substrate core, and a solder mask formed on the substrate core. The redistribution fingers are located between two rows of the bonding fingers. The solder mask has an opening to expose the redistribution fingers. A plurality of exhaust grooves are formed on the solder mask without penetrating through the solder mask where one end of the exhaust grooves connects to the opening and the other end extends toward the edges of the substrate core without connecting to another opening exposing the bonding fingers to be the releasing channels of gases generated during die-attaching processes. When disposing larger IC chips, the issue of residue bubbles trapped in the covered opening and the issue of contaminations of bonding fingers by the die-bonding adhesives can be eliminated. In one of the embodiment, the traces connecting to the redistribution fingers can be overlapped with the exhaust grooves without being exposed from the solder mask to enhance the design flexibility of the exhaust grooves. | 01-28-2010 |
| 20100032824 | IC Package Method Capable of Decreasing IR Drop and Associated IC Apparatus - An IC package method capable of decreasing IR drop of a chip and associated IC apparatus is provided. The IC package method comprises forming a lead frame including a die paddle and a plurality of fingers; installing a die on the die paddle, and coupling a plurality of signal terminals of the die to the fingers; forming a power transferring unit coupled to a power supply; coupling power reception terminals of a plurality of logic units in the die to the power transferring unit; and forming a housing for encapsulating the die, the lead frame and the power transferring unit. | 02-11-2010 |
| 20100072604 | SEMICONDUCTOR DEVICE - To provide a technique of supplying a voltage generated in any of a plurality of semiconductor chips to the other chip as a power supply voltage to realize a stable operation of a semiconductor device in which the semiconductor chips are stacked in the same package. | 03-25-2010 |
| 20100072605 | Semiconductor Package With a Controlled Impedance Bus and Method of Forming Same - An apparatus includes a first substrate having a set of semiconductor devices formed within it. The apparatus also includes a second substrate. A third substrate has a data conductor coupled between first and second connections to the second substrate. The data conductor is coupled to the set of semiconductor devices at respective connection points. | 03-25-2010 |
| 20100084760 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a semiconductor chip mounting substrate, a control circuit board, a power terminal holder and a semi-fixing member. The semiconductor chip mounting substrate includes a substrate, a semiconductor chip provided on a first major surface of the substrate, and a first and second semiconductor chip connection electrodes. The control circuit board is provided generally in parallel to the first major surface and includes a control circuit, a control signal terminal connected to the control circuit, and a through hole extending in a direction generally perpendicular to the first major surface. The power terminal holder is provided on opposite side of the control circuit board from the semiconductor chip mounting substrate and includes a power terminal. The semi-fixing member includes a shank portion and an end portion. The shank portion is fixed to the power terminal holder and penetrates through the through hole. A cross section of the shank portion in a plane orthogonal to the extending direction of the through hole is smaller than a size of the through hole. The end portion is connected to a tip of the shank portion. A cross section of the end portion in the plane is larger than the size of the through hole. The first semiconductor chip connection electrode is connected to a first terminal of the semiconductor chip and the control signal terminal. The second semiconductor chip connection electrode is connected to a second terminal of the semiconductor chip and the power terminal. | 04-08-2010 |
| 20100117214 | IMAGE FORMING APPARATUS, CHIP, AND CHIP PACKAGE - An image forming apparatus including an engine unit to perform an image forming operation, and a board unit to control the engine unit. The board unit includes at least one chip package that includes a chip. The chip includes first pads to transmit a first type of signal, a second pad to transmit a second type of signal, and a third pad interposed between the first and second pads, to reduce cross-talk between the first and second types of signals. | 05-13-2010 |
| 20100117215 | PLANAR MULTI SEMICONDUCTOR CHIP PACKAGE - Provided are a planar multi semiconductor chip package in which a processor and a memory device are connected to each other via a through electrode and a method of manufacturing the planar multi semiconductor chip package. The planar multi semiconductor chip package includes: a substrate comprising a plurality of first circuit patterns on a first surface and a plurality of second circuit patterns on a second surface; a first semiconductor chip comprising a plurality of memory devices arranged on the substrate, wherein first memory devices surround at least a portion of second memory devices; a second semiconductor chip stacked on the first semiconductor chip and corresponding to the second memory devices; and a plurality of through electrodes arranged on the second memory devices and connecting the first and second semiconductor chips to the second circuit pattern of the substrate. | 05-13-2010 |
| 20100127378 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PACKAGE - There is provided a semiconductor device including: plural bit cells each including the same circuit; plural electrodes supplied with power from outside, wherein each of the respective plural electrodes is mounted above the same circuit within the plural bit cells. Further, there is provided a semiconductor package including: the semiconductor device; a substrate mounted with the semiconductor device; an external input terminal formed on the substrate; an external output terminal formed on the substrate; an input wiring pattern connecting the semiconductor device mounted above the substrate and the external input terminal; an output wiring pattern connecting the semiconductor device mounted above the substrate and the external output terminal; and plural power supply lines, arranged without contact with each other on the same face of the substrate, and connecting the plural electrodes mounted to the semiconductor device to the corresponding electrode from the plural external power input electrodes. | 05-27-2010 |
| 20100127379 | Power Semiconductor Module with Control Functionality and Integrated Transformer - A power semiconductor module comprising: a substrate, a plurality of conductor tracks arranged thereon, the conductor tracks being electrically insulated from one another, and including power semiconductor components arranged thereon; a connecting device, composed of an alternating layer sequence of at least two electrically conductive layers and at least one electrically insulating layer disposed therebetween, for the circuit-conforming connection of the power semiconductor components, the conductor tracks and/or external contact devices. The electrically conductive layers form connecting tracks and at least one transformer is formed integrally with, and thus from the constituent parts of, the connecting device. The transformer is composed of at least one transmitter coil and at least one receiver coil, which are in each case arranged coaxially with respect to one another and are formed with spiral windings. | 05-27-2010 |
| 20100155927 | Semiconductor packages with stiffening support for power delivery - Embodiments of the invention relate to semiconductor packages in which electrical power is delivered to die-side components removably installed in sockets formed between a package stiffener and an electrical conductor. To this purpose, the package stiffener and the electrical conductor may be electrically coupled to the power and ground terminals of the semiconductor package. | 06-24-2010 |
| 20100200979 | Power Transistor Package with Integrated Bus Bar - According to one embodiment, a power transistor package includes an electrically conductive flange configured to be connected to a source of a power transistor device. The package further includes a first terminal mechanically fastened to the flange and configured to be electrically connected to a gate of the power transistor device and a second terminal mechanically fastened to the flange and configured to be electrically connected to a drain of the power transistor device. The package also includes a bus bar mechanically fastened to the flange which extends between and connects at least two different DC bias terminals mechanically fastened to the flange. The bus bar is configured to be electrically connected to the drain via one or more RF grounded connections. | 08-12-2010 |
| 20100200980 | SEMICONDUCTOR DEVICE - This semiconductor device has a frame including a bed portion on which a semiconductor chip is mounted, lead groups arranged in an outer peripheral portion, first bus bars, second bus bars and a rectifying bus bar. The first bus bars and the second bus bars are arranged between the bed portion and the lead groups. The rectifying bus bar is arranged in a region where the second bus bar is not arranged. Wire bonding is not performed on the rectifying bus bar. The rectifying bus bar includes a third bus bar having at least one end joined to a lead or a hanging pin and/or a fourth bus bar formed by extending the first bus bar in an outer peripheral direction in which the leads are arranged. The semiconductor device is provided in which deformation and damage of bonding wires when molding a resin sealed body are prevented. | 08-12-2010 |
| 20100230800 | DOUBLE SIDE COOLED POWER MODULE WITH POWER OVERLAY - A power module includes one or more semiconductor power devices having a power overlay (POL) bonded thereto. A first heat sink is bonded to the semiconductor power devices on a side opposite the POL. A second heat sink is bonded to the POL opposite the side of the POL bonded to the semiconductor power devices. The semiconductor power devices, POL, first channel heat sink, and second channel heat sink together form a double side cooled power overlay module. The second channel heat sink is bonded to the POL solely via a compliant thermal interface material without the need for planarizing, brazing or metallurgical bonding. | 09-16-2010 |
| 20100258935 | Power Semiconductor Module Comprising A Connection Device With Internal Contact Spring Connection Elements - A power semiconductor module comprises at least one power semiconductor component and a connection device which makes contact with the power semiconductor component. The connection device is composed of a layer assembly having at least one first electrically conductive layer facing the power semiconductor component and forming at least one first conductor track, and an insulating layer following in the layer assembly, and a second layer following further in the layer assembly and forming at least one second conductor track, the second layer being remote from the power semiconductor component. The power semiconductor module has at least one internal connection element, wherein the internal connection element is embodied as a contact spring having a first and a second contact section and a resilient section. The first contact section has a common contact area with a first or a second conductor track of the connection device. | 10-14-2010 |
| 20110074006 | RF TRANSISTOR PACKAGES WITH INTERNAL STABILITY NETWORK INCLUDING INTRA-CAPACITOR RESISTORS AND METHODS OF FORMING RF TRANSISTOR PACKAGES WITH INTERNAL STABILITY NETWORKS INCLUDING INTRA-CAPACITOR RESISTORS - A packaged RF transistor device includes an RF transistor die including a plurality of RF transistor cells. Each of the plurality of RF transistor cells includes a control terminal and an output terminal. The RF transistor device further includes an RF input lead, and an input matching network coupled between the RF input lead and the RF transistor die. The input matching network includes a plurality of capacitors having respective input terminals. The input terminals of the capacitors are coupled to the control terminals of respective ones of the RF transistor cells. The input matching network further includes a plurality of resistors coupled respectively between adjacent input terminals of the capacitors | 03-31-2011 |
| 20110101515 | POWER MODULE ASSEMBLY WITH REDUCED INDUCTANCE - A device is provided that includes a first conductive substrate and a second conductive substrate. A first power semiconductor component having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal can also be electrically coupled to the first conductive substrate, while a negative terminal can be electrically coupled to the second power semiconductor component, and an output terminal may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness. | 05-05-2011 |
| 20110108975 | Semiconductor package and system - Even when only one of semiconductor packages mounted by carrying out infrared reflow is defective, it is required to carry out infrared reflow again to dismount this defective semiconductor package from a mounting board. At this time, stress of heat is also applied to the other non-defective semiconductor packages. For this reason, if infrared reflow is carried out beyond a number of times of infrared reflow specified for non-defective semiconductor packages, the operation of each non-defective semiconductor package cannot be assured. In this case, it is inevitable to discard the semiconductor packages together with the mounting board. To solve this problem, a magnetic material is passed through a hole penetrating a protection member and a package board and the relevant semiconductor package is fixed over a mounting board by this magnetic material. To supply power to the semiconductor package, electromagnetic induction by coils provided in the package board and the mounting board is used. | 05-12-2011 |
| 20110147915 | COMBINED POWER MESH TRANSITION AND SIGNAL OVERPASS/UNDERPASS - A zipper structure includes a first contiguous full-dense-mesh (FDM) array of a first supply in top metal and a second contiguous FDM array of a second supply in top-1 metal, a third contiguous FDM array of the second supply in top metal and a fourth contiguous FDM array of the first supply in top-1 metal, and a signal line, such that portions of the first contiguous FDM array and the second contiguous FDM array overlap and portions of the third contiguous FDM array and the fourth contiguous FDM array overlap. The Zipper structure facilitates connecting the first contiguous FDM array to the fourth contiguous FDM array by VIAs and a first connector lines and the second contiguous FDM array to the third contiguous FDM array by VIAs and a second connector lines, such that portion of the signal line overlaps with the first connector lines and the second connector lines. | 06-23-2011 |
| 20110193215 | SEMICONDUCTOR PACKAGE - Means for decreasing parasitic inductance by a realistic mounting method is provided. On a surface layer of a semiconductor package, there is provided a ground pad having a plurality of comb-tooth-shaped ground pads which are connecting points for wire bonding and are protruded on the surface layer of the semiconductor package. A power-supply pad is arranged between the comb-tooth-shaped ground pads. Two long and short ground wires are arranged in one comb-tooth-shaped ground pad. Also, two long and short power-supply wires are arranged in one power-supply pad. By arranging the long ground wire and the long power-supply wire so as to be parallel and close to each other and arranging the short power-supply wire and the short ground wire so as to be parallel and close to each other, the parasitic inductance is decreased. | 08-11-2011 |
| 20110266665 | PRESS-PACK MODULE WITH POWER OVERLAY INTERCONNECTION - Systems and methods for utilizing power overlay (POL) technology and semiconductor press-pack technology to produce semiconductor packages with higher reliability and power density are provided. A POL structure may interconnect semiconductor devices within a semiconductor package, and certain embodiments may be implemented to reduce the probability of damaging the semiconductor devices during the pressing of the conductive plates. In one embodiment, springs and/or spacers may be used to reduce or control the force applied by an emitter plate onto the semiconductor devices in the package. In another embodiment, the emitter plate may be recessed to exert force on the POL structure, rather than directly against the semiconductor devices. Further, in some embodiments, the conductive layer of the POL structure may be grown to function as an emitter plate, and regions of the conductive layer may be made porous to provide compliance. | 11-03-2011 |
| 20120056313 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a radiator plate including a stress alleviation section, a resin sheet arranged on the radiator plate, a pair of bus bars joined to the radiator plate through the resin sheet at positions at which the stress alleviation section is interposed between the bus bars, and a semiconductor device joined to the pair of bus bars by being sandwiched between the bus bars, and energized from outside through the pair of bus bars. | 03-08-2012 |
| 20120074556 | SEMICONDUCTOR POWER MODULE AND METHOD OF MANUFACTURING THE SAME - A semiconductor power module according to the present invention includes a base member, a semiconductor power device having a surface and a rear surface with the rear surface bonded to the base member, a metal block, having a surface and a rear surface with the rear surface bonded to the surface of the semiconductor power device, uprighted from the surface of the semiconductor power device in a direction separating from the base member and employed as a wiring member for the semiconductor power device, and an external terminal bonded to the surface of the metal block for supplying power to the semiconductor power device through the metal block. | 03-29-2012 |
| 20120146208 | SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREOF - A semiconductor module according to one embodiment includes a semiconductor chip, an insulating substrate, a case, an electrode, a busbar and a busbar support body. The semiconductor chip is mounted on the insulating substrate. The insulating substrate is housed inside the case. The electrode is disposed in the case and is electrically connected to the semiconductor chip. The electrode is supported on an electrode support section of the case. The busbar is bonded to the electrode and is led out of the case. The busbar support body holds the busbar and is mounted on the case. | 06-14-2012 |
| 20120181681 | Stacked Half-Bridge Package with a Current Carrying Layer - According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package also includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. A current carrying layer is situated on the sync drain; the control transistor and the sync transistor being stacked on one another, where the current carrying layer provides a high current connection between the sync drain and the control source. | 07-19-2012 |
| 20130020694 | POWER MODULE PACKAGING WITH DOUBLE SIDED PLANAR INTERCONNECTION AND HEAT EXCHANGERS - A double sided cooled power module package having a single phase leg topology includes two IGBT and two diode semiconductor dies. Each IGBT die is spaced apart from a diode semiconductor die, forming a switch unit. Two switch units are placed in a planar face-up and face-down configuration. A pair of DBC or other insulated metallic substrates is affixed to each side of the planar phase leg semiconductor dies to form a sandwich structure. Attachment layers are disposed on outer surfaces of the substrates and two heat exchangers are affixed to the substrates by rigid bond layers. The heat exchangers, made of copper or aluminum, have passages for carrying coolant. The power package is manufactured in a two-step assembly and heating process where direct bonds are formed for all bond layers by soldering, sintering, solid diffusion bonding or transient liquid diffusion bonding, with a specially designed jig and fixture. | 01-24-2013 |
| 20130037928 | SEMICONDUCTOR PACKAGE AND SYSTEM - A semiconductor package includes a package board, a pellet provided over the package board, and a protection member covering the package board and the pellet and including a hole penetrating the protection member. | 02-14-2013 |
| 20130062750 | SEMICONDUCTOR DEVICE INCLUDING CLADDED BASE PLATE - A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure. | 03-14-2013 |
| 20130105961 | LOW INDUCTANCE POWER MODULE | 05-02-2013 |
| 20140008781 | SEMICONDUCTOR UNIT - A semiconductor unit includes a first conductive layer, a second conductive layer electrically insulated from the first conductive layer, a first semiconductor device mounted on the first conductive layer, a second semiconductor device mounted on the second conductive layer, a first bus bar for electrical connection of the second semiconductor device to the first conductive layer, and a second bus bar for electrical connection of the first semiconductor device to one of the positive and negative terminals of a battery. The first bus bar is disposed in overlapping relation to the second bus bar in such a manner that mold resin fills between the first bus bar and the second bus bar. | 01-09-2014 |
| 20140035120 | SEMICONDUCTOR UNIT - A semiconductor unit includes an insulation layer, a conductive layer bonded to one side of the insulation layer, a semiconductor device mounted on the conductive layer, a cooler thermally coupled to the other side of the insulation layer, a first bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the first bus bar other than the bonding surface, and a second bus bar having a bonding surface bonded to the semiconductor device or the conductive layer and a non-bonding surface that is the part of the second bus bar other than the bonding surface. The second bus bar has a greater ratio of the area of the bonding surface to the area of the non-bonding surface than the first bus bar. The second bus bar has a lower electric resistance than the first bus bar. | 02-06-2014 |
| 20140124913 | OPEN SOLDER MASK AND OR DIELECTRIC TO INCREASE LID OR RING THICKNESS AND CONTACT AREA TO IMPROVE PACKAGE COPLANARITY - A packaging substrate, a packaged semiconductor device, a computing device and methods for forming the same are provided. In one embodiment, a packaging substrate is provided that includes a packaging structure having a chip mounting surface and a bottom surface. The packaging structure has at a plurality of conductive paths formed between the chip mounting surface and the bottom surface. The conductive paths are configured to provide electrical connection between an integrated circuit chip disposed on the chip mounting surface and the bottom surface of the packaging structure. The packaging structure has an opening formed in the chip mounting surface proximate a perimeter of the packaging structure. A stiffening microstructure is disposed in the opening and is coupled to the packaging structure. | 05-08-2014 |
| 20140246768 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device that improves noise performance includes a circuit substrate, an enclosing case, and a metal part. A control circuit is mounted on the front surface of the circuit substrate. The enclosing case is a resin case in which semiconductor elements are installed. The metal part, included inside the enclosing case, includes a first mounting portion, a second mounting portion, and a bus bar. The first mounting portion mounts the circuit substrate on the enclosing case, and is connected to a ground pattern of the circuit substrate when mounting. The second mounting portion mounts an external instrument on the enclosing case, and is grounded when mounting. The bus bar connects the first mounting portion and second mounting portion. | 09-04-2014 |
| 20140312483 | SEMICONDUCTOR PACKAGE HAVING IC DICE AND VOLTAGE TUNERS - A semiconductor package includes an interposer and a plurality of integrated circuit (IC) dice disposed on and intercoupled via the interposer. A first IC die has a clock speed rating that is greater than a clock speed rating of another of the IC dice. A plurality of programmable voltage tuners are coupled to the plurality of IC dice, respectively. A first voltage tuner is coupled to the first IC die, and the first voltage tuner is programmed to reduce a voltage level of voltage input to the first voltage tuner and output the reduced voltage to the first IC die. | 10-23-2014 |
| 20150014837 | IMAGE FORMING APPARATUS, CHIP, AND CHIP PACKAGE - An image forming apparatus including an engine unit to perform an image forming operation, and a board unit to control the engine unit. The board unit includes at least one chip package that includes a chip. The chip includes first pads to transmit a first type of signal, a second pad to transmit a second type of signal, and a third pad interposed between the first and second pads, to reduce cross-talk between the first and second types of signals. | 01-15-2015 |
| 20150041968 | IMAGE FORMING APPARATUS, CHIP, AND CHIP PACKAGE - An image forming apparatus including an engine unit to perform an image forming operation, and a board unit to control the engine unit. The board unit includes at least one chip package that includes a chip. The chip includes first pads to transmit a first type of signal, a second pad to transmit a second type of signal, and a third pad interposed between the first and second pads, to reduce cross-talk between the first and second types of signals. | 02-12-2015 |
| 20160118329 | SEMICONDUCTOR DEVICE - A partition in lattice form forms a plurality of housing sections. A plurality of circuit blocks including a semiconductor block and a terminal base block are electrically connected one to another in a state of being housed in the housing sections to form a power semiconductor circuit. The semiconductor block is formed by covering an IGBT with an insulating material. A collector of the IGBT is connected to an electrode through a metal plate. The electrode is led out from an inner portion of the insulating material to a side surface of the insulating material. A terminal base block includes a power terminal to which an external power wiring for supplying electric power to the IGBT is electrically connected, and a screw hole into which a screw for fixing the power wiring is inserted. | 04-28-2016 |
| 20160133542 | SEMICONDUCTOR PACKAGES - A semiconductor package includes a package substrate including a first region, a thermal block penetrating the first region and exposed at top and bottom surfaces of the package substrate, a semiconductor chip on the package substrate, bumps disposed between the package substrate and the semiconductor chip and including first bumps being in contact with the thermal block, and terminals disposed on the bottom surface of the package substrate and including first terminals being in contact with the thermal block. The thermal block is one of a power path and a ground path. | 05-12-2016 |
| 20190148285 | STACKED SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR SYSTEM | 05-16-2019 |
