| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257665000 | CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS | 12 |
| 20080237813 | CIRCUIT BOARD AND SEMICONDUCTOR DEVICE - A printed circuit board includes a source interconnect and a ground interconnect, and the circuit board has a two-dimensional geometry having a corner. Protruding portions are provided in circumferences of the source interconnect and the ground interconnect in regions except the corner in plan view, and the source interconnect and the ground interconnect are connected to a common first decoupling capacitor in each of the protruding portions. | 10-02-2008 |
| 20090020856 | SEMICONDUCTOR DEVICE STRUCTURES AND METHODS FOR SHIELDING A BOND PAD FROM ELECTRICAL NOISE - Semiconductor device structures and methods for shielding a bond pad from electrical noise generated by active circuitry of an integrated circuit carried on a substrate. The structure includes electrically characterized devices placed in a pre-determined arrangement under the bond pad. The pre-determined arrangement of the electrically characterized devices provides for a consistent high frequency environment under the bond pad, which simplifies modeling of the bond pad by a circuit designer. | 01-22-2009 |
| 20090039480 | SEMICONDUCTOR DEVICE AND METHODS OF FORMING THE SAME - The semiconductor device includes a fuse structure disposed on a substrate. An interlayer dielectric disposed on the fuse structure. A first contact plug, a second contact plug, and a third contact plug penetrate the interlayer dielectric and wherein each of the first contact plug, the second contact plug and the third contact plug are connected to the fuse structure. A first conductive pattern and a second conductive pattern are disposed on the interlayer dielectric. The first conductive pattern and the second conductive pattern are electrically connected to the first contact plug and second contact plug, respectively. | 02-12-2009 |
| 20090152690 | Semiconductor Chip Substrate with Multi-Capacitor Footprint - Various methods and apparatus for coupling capacitors to a chip substrate are disclosed. In one aspect, a method of manufacturing is provided that includes forming a mask on a semiconductor chip substrate that has plural conductor pads. The mask has plural openings that expose selected portions of the plural conductor pads. Each of the plural openings has a footprint corresponding to a footprint of a smallest size terminal of a capacitor adapted to be coupled to the semiconductor chip substrate. A conductor material is placed in the plural openings to establish plural capacitor pads. | 06-18-2009 |
| 20090236701 | Chip arrangement and a method of determining an inductivity compensation structure for compensating a bond wire inductivity in a chip arrangement - A chip arrangement is disclosed. The chip arrangement includes a first chip, a first bond wire having an inductive element and coupled with the first chip at its one end and an inductivity compensation structure including a first conductive plate coupled with the first bond wire at the other end of the first bond wire, and a second conductive plate arranged in parallel to the first conductive plate, wherein the first conductive plate and the second conductive plate are configured such that a resonant condition for a partial circuit formed by the first bond wire and the inductivity compensation structure is formed to compensate for the inductive element of the first bond wire. A method of determining an inductivity compensation structure for compensating a bond wire inductivity in a chip arrangement is also disclosed. | 09-24-2009 |
| 20090302440 | NOISE ISOLATION BETWEEN CIRCUIT BLOCKS IN AN INTEGRATED CIRCUIT CHIP - An integrated circuit includes a p-well block region having a low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region and a grounded, highly doped region for providing additional noise isolation. | 12-10-2009 |
| 20100059869 | Systems and Methods for Enabling ESD Protection on 3-D Stacked Devices - An electrostatic discharge (ESD) protection device is fabricated in a vertical space between active layers of stacked semiconductor dies thereby utilizing space that would otherwise be used only for communication purposes. The vertical surface area of the through silicon vias (TSVs) is used for absorbing large voltages resulting from ESD events. In one embodiment, an ESD diode is created in a vertical TSV between active layers of the semiconductor dies of a stacked device. This ESD diode can be shared by circuitry on both semiconductor dies of the stack thereby saving space and reducing die area required by ESD protection circuitry. | 03-11-2010 |
| 20100270662 | POLYSILICON DRIFT FUSE - A polysilicon resistor fuse has an elongated bow-tie body that is wider at the opposite ends relative to a narrow central portion. The opposite ends of the body of the fuse have high concentrations of N-type dopants to make them low resistance contacts. The upper portion of the central body has a graded concentration of N-type dopants that decreases in a direction from the top surface toward the middle of the body between the opposite surfaces. The lower central portion of the body is lightly doped with P-type dopants. The central N-type region is a resistive region. | 10-28-2010 |
| 20130026613 | SEMICONDUCTOR DEVICE - A method of cutting an electrical fuse including a first conductor and a second conductor, the first conductor including a first cutting target region, the second conductor branched from the first conductor and connected to the first conductor and including a second cutting target region, which are formed on a semiconductor substrate, the method includes flowing a current in the first conductor, causing material of the first conductor to flow outward near a coupling portion connecting the first conductor to the second conductor, and cutting the first cutting target region and the second cutting target region. | 01-31-2013 |
| 20140319662 | SEMICONDUCTOR PACKAGE - Provided is a semiconductor package which may include a package substrate which includes a power supply region and an interconnection region around the power supply region, a plurality of ground terminals and a plurality of power terminals, which are disposed in the power supply region with a dielectric interposed between the ground terminals and the power terminals, wherein the ground terminals and the power terminals extend from a top surface of the package substrate to a bottom surface of the package substrate, and at least one semiconductor chip mounted on the package substrate, the semiconductor chip includes a plurality of ground pads which are commonly connected to a ground terminal of the ground terminals and a plurality of power pads which are commonly connected to a power terminal of the power terminals. | 10-30-2014 |
| 20140346655 | MEMORY CELL - A method of programming a memory cell includes causing a current to flow through a first silicide-containing portion and a second silicide-containing portion of the memory cell; and causing, by the current, an electron-migration effect to form an extended silicide-containing portion within the gap such that the memory cell is converted from a first state into a second state. The memory cell includes a silicon-containing line continuously extending between a first region and a second region; the first silicide-containing portion over the silicon-containing line and adjacent to the first region; and the second silicide-containing portion over the silicon-containing line and adjacent to the second region. The first silicide-containing portion and the second silicide-containing portion are separated by a gap if the memory cell is at the first state. The extended silicide-containing portion extends from the second silicide-containing portion towards the first silicide-containing portion. | 11-27-2014 |
| 20150294945 | APPARATUS AND METHODS FOR SHIELDING DIFFERENTIAL SIGNAL PIN PAIRS - The disclosure is related to pin layouts in a semiconductor package. One embodiment of the disclosure provides a rhombus shaped shared reference pin layout that isolates a set of differential pin pairs. The differential signal pin pairs are configured such that an axis formed by a vertical signal pin pair is orthogonal to and mutually bisecting an axis formed by a lateral signal pin pair. | 10-15-2015 |
