| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257476000 | In integrated structure | 51 |
| 20080197439 | Semiconductor Device And Method For Manufacturing Same - A semiconductor device including a Schottky diode of the trench-junction-barrier type having an integrated PN diode, and a corresponding method for manufacturing the device, are provided. An n layer is provided on an n | 08-21-2008 |
| 20080230867 | Method of forming ohmic contact to a semiconductor body - A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal. | 09-25-2008 |
| 20080258252 | CIRCUIT ARRANGEMENT HAVING A FREE-WHEEL DIODE - An object of the present invention is to reduce the conducting loss of an existing conversion circuit while suppressing its noise. The present invention is typically a circuit arrangement includes at least one switching device and a free-wheel diode connected in parallel with the switching device. The free-wheel diode is formed by connecting a silicon PiN diode in parallel with a Schottky barrier diode that uses a semiconductor material having a wider band gap than silicon as a base material. The silicon PiN diode and Schottky barrier diode are separate chips. | 10-23-2008 |
| 20080296721 | Junction Barrier Schottky Diode with Dual Silicides and Method of Manufacture - An integrated circuit, including a junction barrier Schottky diode, has an N type well, a P-type anode region in the surface of the well, and an N-type Schottky region in the surface of the well and horizontally abutting the anode region. A first silicide layer is on and makes a Schottky contact to the Schottky region and is on an adjoining anode region. A second silicide layer of a different material than the first silicide is on the anode region. An ohmic contact is made to the second silicide on the anode region and to the well. | 12-04-2008 |
| 20080296722 | JUNCTION BARRIER SCHOTTKY DIODE - A junction barrier Schottky diode has an N-type well having surface and a first impurity concentration; a p-type anode region in the surface of the well, and having a second impurity concentration; and an N-type cathode region in the surface of the well and horizontally abutting the anode region, and having a third impurity concentration. A first N-type region vertically abuts the anode and cathode regions, and has a fourth impurity concentration. An ohmic contact is made to the anode and a Schottky contact is made to the cathode. The fourth impurity concentration is less than the first, second and third impurity concentrations. | 12-04-2008 |
| 20090020844 | Semiconductor device having electrostatic discharge protection circuit and method of manufacturing the same - Semiconductor device having an on-chip type electrostatic discharge (ESD) protection circuit and a method of manufacturing the same are provided. The on-chip type ESD protection circuit may include a first junction diode having a first conductive type region contacting a second conductive type region in a semiconductor substrate, and a first schottky diode having a metallic material layer arranged on and contacting the first conductive type region of the semiconductor substrate. | 01-22-2009 |
| 20090032897 | Semiconductor Device and Method for Its Manufacture - In semiconductor devices and methods for their manufacture, the semiconductor devices are arranged as a trench-Schottky-barrier-Schottky diode having a pn diode as a clamping element (TSBS-pn), and having additional properties compared to usual TSBS elements which make possible adaptation of the electrical properties. The TSBS-pn diodes are produced using special manufacturing methods, are arranged in their physical properties such that they are suitable for use in a rectifier for a motor vehicle generator, and are also able to be operated as Z diodes. | 02-05-2009 |
| 20090065888 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor device includes an n-type n-well region formed over a main surface of a p-type semiconductor substrate, an n-type cathode region formed in part thereof and higher in impurity concentration than the n-well region, a p-type guard ring region formed so as to surround the n-type cathode region in circular form, an anode conductor film formed so as to integrally cover the n-type cathode region and the p-type guard ring region and to be electrically coupled thereto, n-type cathode conduction regions formed outside the p-type guard ring region with each separation portion left therebetween, and a cathode conductor film formed so as to cover the n-type cathode conduction regions and to be electrically coupled thereto. The anode conductor film and the n-type cathode region are Schottky-coupled to each other. | 03-12-2009 |
| 20090146241 | SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor apparatus for improving a switching speed and a withstand voltage, and a manufacturing method of the semiconductor apparatus. The semiconductor apparatus of the invention including a first conductive type semiconductor substrate, a first conductive type first semiconductor region with an impurity concentration lower than that of the semiconductor substrate and formed on a first principal surface of the semiconductor substrate, a second conductive type second semiconductor region formed in a surface region of the first semiconductor region and which forms a PN junction with the first semiconductor region, a contact region including a part of the first semiconductor region and a part of the second semiconductor region, an insulating layer having an opening part through which at least the contact region are exposed, a first electrode formed so as to be in contact with at least the contact region and a second electrode formed on a second principal surface of the semiconductor substrate, wherein the second semiconductor region, viewed from a direction perpendicular to the first principal surface includes a first region in which a plurality of islands of the second semiconductor are aligned with intervals and a second region which connects each end of the islands of the first region each other. | 06-11-2009 |
| 20090184389 | Nonvolatile Nanotube Diodes and Nonvolatile Nanotube Blocks and Systems Using Same and Methods of Making Same - A non-volatile nanotube switch and memory arrays constructed from these switches are disclosed. A non-volatile nanotube switch includes a conductive terminal and a nanoscopic element stack having a plurality of nanoscopic elements arranged in direct electrical contact, a first comprising a nanotube fabric and a second comprising a carbon material, a portion of the nanoscopic element stack in electrical contact with the conductive terminal. Control circuitry is provided in electrical communication with and for applying electrical stimulus to the conductive terminal and to at least a portion of the nanoscopic element stack. At least one of the nanoscopic elements is capable of switching among a plurality of electronic states in response to a corresponding electrical stimuli applied by the control circuitry to the conductive terminal and the portion of the nanoscopic element stack. For each electronic state, the nanoscopic element stack provides an electrical pathway of corresponding resistance. | 07-23-2009 |
| 20090194838 | COSI2 SCHOTTKY DIODE INTEGRATION IN BISMOS PROCESS - Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a CoSi2 Schottky diode comprising of one or more CoSi2 anodes. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation. | 08-06-2009 |
| 20090194839 | NONVOLATILE NANOTUBE DIODES AND NONVOLATILE NANOTUBE BLOCKS AND SYSTEMS USING SAME AND METHODS OF MAKING SAME - A high-density memory array. A plurality of word lines and a plurality of bit lines are arranged to access a plurality of memory cells. Each memory cell includes a first conductive terminal and an article in physical and electrical contact with the first conductive terminal, the article comprising a plurality of nanoscopic particles. A second conductive terminal is in physical and electrical contact with the article. Select circuitry is arranged in electrical communication with a bit line of the plurality of bit lines and one of the first and second conductive terminals. The article has a physical dimension that defines a spacing between the first and second conductive terminals such that the nanotube article is interposed between the first and second conducive terminals. A logical state of each memory cell is selectable by activation only of the bit line and the word line connected to that memory cell. | 08-06-2009 |
| 20090243027 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING THE SAME - To achieve a further reduction in the size of a finished product by reducing the number of externally embedded parts, the embedding of a Schottky barrier diode which is relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. In such a case, it is general practice to densely arrange a large number of contact electrodes in a matrix over a Schottky junction region. It has been widely performed to perform a sputter etching process with respect to the surface of a silicide layer at the bottom of each contact hole before a barrier metal layer is deposited. However, in a structure in which electrodes are thus arranged over a Schottky junction region, a reverse leakage current in a Schottky barrier diode is varied by variations in the amount of sputter etching. The present invention is a semiconductor integrated circuit device having a Schottky barrier diode in which contact electrodes are arranged over a guard ring in contact with a peripheral isolation region. | 10-01-2009 |
| 20100059849 | SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURE - A semiconductor component having a low resistance conduction path and a method for manufacturing the semiconductor component. When the semiconductor component is a Schottky diode, one or more trenches are formed in an epitaxial layer of a first conductivity type that is formed over a semiconductor substrate of the first conductivity type. The trenches may extend into the semiconductor material. Epitaxial semiconductor material of a second conductivity type is selectively grown along the sidewalls of the trenches. An anode contact is formed in contact with the epitaxial layer and the selectively grown epitaxial material and a cathode contact is formed in contact with the semiconductor substrate. | 03-11-2010 |
| 20100133644 | Bottom anode Schottky diode structure and method - This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further includes a sinker dopant region disposed at a depth in the semiconductor substrate extending substantially to the anode electrode disposed on the bottom surface of the semiconductor and the sinker dopant region covered by a buried Schottky barrier metal functioning as a Schottky anode. The BAS diode further includes a lateral cathode region extended laterally from a cathode electrode near a top surface of the semiconductor substrate opposite the Schottky barrier metal wherein the lateral cathode region doped with an opposite dopant from the sinker dopant region and interfacing the sinker dopant region whereby a current path is formed from the cathode electrode to the anode electrode through the lateral cathode region and the sinker dopant region in applying a forward bias voltage and the sinker dopant region depleting the cathode region in applying a reverse bias voltage for blocking a leakage current. | 06-03-2010 |
| 20100314708 | JUNCTION BARRIER SCHOTTKY DIODE - A junction barrier Schottky diode has an N-type well having a surface and a first peak impurity concentration; a P-type anode region in the surface of the well, and having a second peak impurity concentration; an N-type cathode contact region in the surface of the well and laterally spaced from a first wall of the anode region, and having a third peak impurity concentration; and a first N-type region in the surface of the well and laterally spaced from a second wall of the anode region, and having a fourth impurity concentration. The center of the spaced region between the first N-type region and the second wall of the anode region has a fifth peak impurity concentration. An ohmic contact is made to the anode region and cathode contact region, and a Schottky contact is made to the first N-type region. The first and fifth peak impurity concentrations are less than the fourth peak impurity concentration, and the fourth peak impurity concentration is less that the second and third peak impurity concentrations. | 12-16-2010 |
| 20100320557 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having an anode of a Si-FRD and a cathode of a Si-SBD which are serially connected. The Si-SBD has a junction capacitance whose amount of accumulable charge is equal to or more than an amount of charge occurring at the time of reverse recovery of the Si-FRD, and has a lower breakdown voltage than the Si-FRD does. | 12-23-2010 |
| 20110057286 | Semiconductor device and method for manufacturing of the same - The present invention provides a semiconductor device including: a base substrate; a first semiconductor layer which is disposed on the base substrate and has a front surface and a rear surface opposite to the front surface; first ohmic electrodes disposed on the front surface of the first semiconductor layer; a second ohmic electrode disposed on the rear surface of the first semiconductor layer; a second semiconductor layer interposed between the first semiconductor layer and the first ohmic electrodes; and a Schottky electrode part which covers the first ohmic electrodes on the front surface of the first semiconductor layer. | 03-10-2011 |
| 20110163408 | Schottky diode with low reverse leakage current and low forward voltage drop - A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor. | 07-07-2011 |
| 20110233713 | SCHOTTKY DIODE AND METHOD FOR FABRICATING THE SAME - A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the isolation layer and located at a left side of the isolation layer, a second conductive type well formed in the deep well along the outer sidewall of the isolation layer and located at a right side of the isolation layer, an anode electrode formed over the substrate and coupled to the deep well and the guard ring, and a cathode electrode formed over the substrate and coupled to the well. A part of the guard ring overlaps the isolation layer. | 09-29-2011 |
| 20120018837 | SCHOTTKY BARRIER DIODE WITH PERIMETER CAPACITANCE WELL JUNCTION - A Schottky barrier diode comprises a first-type substrate, a second-type well isolation region on the first-type substrate, and a first-type well region on the second-type well isolation region. With embodiments herein a feature referred to as a perimeter capacitance well junction ring is on the second-type well isolation region. A second-type well region is on the second-type well isolation region. The perimeter capacitance well junction ring is positioned between and separates the first-type well region and the second-type well region. A second-type contact region is on the second-type well region, and a first-type contact region contacts the inner portion of the first-type well region. The inner portion of the first-type well region is positioned within the center of the first-type contact region. Additionally, a first ohmic metallic layer is on the first-type contact region and a second ohmic metallic layer is on the first-type well region. The first ohmic metallic layer contacts the second ohmic metallic layer at a junction that makes up the Schottky barrier of the Schottky barrier diode. | 01-26-2012 |
| 20120104537 | Semiconductor Device and a Method for Manufacturing a Semiconductor Device - A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body with a first semiconductor region and a second semiconductor region spaced apart from each other. A first metallization is in contact with the first semiconductor region. A second metallization is in contact with the second semiconductor region. An insulating region extends between the first semiconductor region and the second semiconductor region. A semi-insulating region having a resistivity of about 10 | 05-03-2012 |
| 20120187521 | SCHOTTKY DIODE HAVING A SUBSTRATE P-N DIODE - A semiconductor device has a trench junction barrier Schottky diode that includes an integrated substrate p-n diode (TJBS-Sub-PN) as a clamping element, the trench junction barrier Schottky diode being suited, e.g., as a Zener diode having a breakdown voltage of approximately 20 V, for use in motor-vehicle generator systems. In this context, the TJBS-Sub-PN is made up of a combination of a Schottky diode, an epitaxial p-n diode and a substrate p-n diode, and the breakdown voltage of the substrate p-n diode (BV_pn) is less than the breakdown voltage of the Schottky diode (BV_schottky) and the breakdown voltage of the epitaxial p-n diode (BV_epi). | 07-26-2012 |
| 20120193746 | SEMICONDUCTOR CHIP AND MULTI-CHIP PACKAGE HAVING THE SAME - A semiconductor chip includes: a semiconductor substrate; an interface member formed through the semiconductor substrate and electrically coupled to an external signal transfer terminal; and a backward diode formed between the semiconductor substrate and the interface member. | 08-02-2012 |
| 20120280353 | PROTECTIVE ELEMENT FOR ELECTRONIC CIRCUITS - A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode being connected to the power supply and the cathode of the Schottky diode being connected to the electronics, and the cathode and the anode of the Zener diode are connected to ground. The Schottky diode is a trench MOS barrier junction diode or trench MOS barrier Schottky (TMBS) diode or a trench junction barrier Schottky (TJBS) diode and includes an integrated semiconductor arrangement, which has at least one trench MOS barrier Schottky diode and a p-doped substrate, which is used as the anode of the Zener diode. | 11-08-2012 |
| 20120326261 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a well region, a dielectric structure, a first doped layer, a second doped layer and a first doped region. The dielectric structure is on the well region. The dielectric structure has a first dielectric sidewall and a second dielectric sidewall opposite to each other. The dielectric structure includes a first dielectric portion and a second dielectric portion, between the first dielectric sidewall and the second dielectric sidewall. The first doped layer is on the well region between the first dielectric portion and the second dielectric portion. The second doped layer is on the first doped layer. The first doped region is in the well region on the first dielectric sidewall. | 12-27-2012 |
| 20120326262 | Semiconductor Integrated Circuit Device and A Method of Manufacturing the Same - To reduce size of a finished product by reducing the number of externally embedded parts, embedding of a Schottky barrier diode relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. It is general practice to densely arrange a number of contact electrodes in a matrix over a Schottky junction region. A sputter etching process to the surface of a silicide layer at the bottom of each contact hole is performed before a barrier metal layer is deposited. However, in a structure in which electrodes are thus arranged over a Schottky junction region, a reverse leakage current in a Schottky barrier diode is varied by variations in the amount of sputter etching. The present invention is a semiconductor integrated circuit device having a Schottky barrier diode in which contact electrodes are arranged over a guard ring in contact with a peripheral isolation region. | 12-27-2012 |
| 20130001734 | SCHOTTKY DIODE STRUCTURE - A Schottky diode structure includes a semiconductor substrate having an anode region and a cathode region. A lightly doped region with a predetermined conductivity type is in the semiconductor substrate. A metal contact overlies the lightly doped region and corresponds to the cathode region to serve as a cathode. A metal silicide layer is beneath and electrically connected to the metal contact, wherein the metal silicide layer, directly under the metal contact, is in direct contact with the lightly doped region. A heavily doped region with the predetermined conductivity type is in the lightly doped region and corresponds to the anode region to serve as an anode. | 01-03-2013 |
| 20130207221 | EMBEDDED TUNGSTEN RESISTOR - A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer. | 08-15-2013 |
| 20130214378 | SEMICONDUCTOR DEVICE INCLUDING A MOSFET AND SCHOTTKY JUNCTION - A semiconductor device for use in a power supply circuit has first and second MOSFETS. The source-drain path of one of the MOSFETS are coupled to the source-drain path of the other, and a load element is coupled to a connection node of the source-drain paths. The second MOSFET is formed on a semiconductor substrate with a Schottky barrier diode. First gate electrodes of the second MOSFET are formed in trenches in a first region of the semiconductor substrate, while second gate electrodes of the second MOSFET are formed in trenches in a second region of the semiconductor substrate. The first and second gate electrodes are electrically connected together. Portions of the Schottky barrier diode are formed between adjacent ones of the second gate electrodes. A center-to-center spacing between adjacent first gate electrodes is smaller than a center-to-center spacing between adjacent second gate electrodes. | 08-22-2013 |
| 20130221476 | DEVICES AND METHODS RELATED TO ELECTROSTATIC DISCHARGE PROTECTION BENIGN TO RADIO-FREQUENCY OPERATION - Disclosed are systems, devices and methods for providing electrostatic discharge (ESD) protection for integrated circuits. In some implementations, first and second conductors with ohmic contacts on an intrinsic semiconductor region can function similar to an x-i-y type diode, where each of x and y can be n-type or p-type. Such a diode can be configured to turn on under selected conditions such as an ESD event. Such a structure can be configured so as to provide an effective ESD protection while providing little or substantially nil effect on radio-frequency (RF) operating properties of a device. | 08-29-2013 |
| 20140001594 | SCHOTTKY DIODE WITH LEAKAGE CURRENT CONTROL STRUCTURES | 01-02-2014 |
| 20140061848 | Schottky Isolated NMOS for Latch-Up Prevention - An integrated circuit structure includes a substrate, a semiconductor device supported by the substrate, and a guard ring structure disposed around the semiconductor device, the guard ring structure forming a Schottky junction. In an embodiment, the Schottky junction is formed from a p-type metal contact and an n-type guard ring. In an embodiment, the guard ring structure is electrically coupled to a positive or negative supply voltage. | 03-06-2014 |
| 20140197515 | HIGH VOLTAGE CIRCUIT LAYOUT STRUCTURE - A high voltage circuit layout structure has a P-type substrate; a first N-type tub, a second N-type tub, a third N-type tub, a first P-type tub with a first width and a second P-type tub with a second width formed on the P-type substrate; wherein the first P-type tub is formed between the first N-type tub and the second N-type tub; and the second P-type tub is formed between the second N-type tub and the third N-type tub. | 07-17-2014 |
| 20140239435 | SUPER-JUNCTION SCHOTTKY PIN DIODE - A semiconductor chip has an n | 08-28-2014 |
| 20140319644 | SEMICONDUCTOR DIODE AND METHOD OF MANUFACTURE | 10-30-2014 |
| 20150021732 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a PN junction diode formed in the second well, with an impurity concentration of the PN junction thereof set higher than an impurity concentration of the Schottky junction of the Schottky barrier diode, and being connected antiparallel with the Schottky barrier diode. | 01-22-2015 |
| 20150054116 | HIGH VOLTAGE DEVICE HAVING SCHOTTKY DIODE - A high voltage device having Schottky diode includes a semiconductor substrate, a Schottky diode formed on the semiconductor substrate, at least a first doped region having a first conductive type formed in the semiconductor substrate and under the Schottky diode, and a control gate positioned on the semiconductor substrate. The control gate covers a portion of the Schottky diode and the first doped region positioned on the semiconductor substrate. | 02-26-2015 |
| 20150102451 | NANOSCALE SILICON SCHOTTKY DIODE ARRAY FOR LOW POWER PHASE CHANGE MEMORY APPLICATION - Methods and devices associated with a phase change memory include Schottky diodes operating as selectors having a low turn-on voltage, low sneak current and high switching speed. A method of forming a semiconductor device includes providing a semiconductor substrate having a diode array region and a peripheral device region, forming an N+ buried layer in the diode array region, forming a semiconductor epitaxial layer on the N+ buried layer, and forming deep trench isolations through the epitaxial layer and the N+ buried layer along a first direction. The method also includes forming shallow trench isolations in the diode array region and in the peripheral region along a second line direction. The method also includes forming an N− doped region between the deep and shallow trench isolations and forming a metal silicide on a surface of the N− doped region. | 04-16-2015 |
| 20150318329 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material. | 11-05-2015 |
| 20150318330 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate in which a word line region is formed, and a barrier metal layer arranged on the word line region and causing a Schottky junction. The barrier metal layer includes a first nitride material, in which a first material is nitrified, and a second nitride material, in which a second material is nitrified. The barrier metal layer is formed of a mixture of the first nitride material and the second nitride material. At least one of the first material or the second material is rich in a metal used to form the first nitride material or the second nitride material. | 11-05-2015 |
| 20150333053 | ELECTROSTATIC DISCHARGE DIODE - A method includes thinning a back-side of a substrate to expose a portion of a first via that is formed in the substrate. The method also includes forming a first diode at the back-side of the substrate. The first diode is coupled to the first via. | 11-19-2015 |
| 20160064504 | Method of Manufacturing a Device by Locally Heating One or More Metalization Layers and by Means of Selective Etching - A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device. | 03-03-2016 |
| 20160071839 | EMBEDDED TUNGSTEN RESISTOR - A high TCR tungsten resistor on a reverse biased Schottky diode. A high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A high TCR tungsten resistor embedded in a intermetal dielectric layer above a lower interconnect layer and below an upper interconnect layer. A method of forming a high TCR tungsten resistor on a reverse biased Schottky diode. A method of forming high TCR tungsten resistor on an unsilicided polysilicon platform geometry. A method of forming high TCR tungsten resistor between two parallel polysilicon leads on remaining contact etch stop dielectric. A method of forming high TCR tungsten resistor embedded in a inter metal dielectric layer above a lower interconnect layer and below an upper interconnect layer. | 03-10-2016 |
| 20160079234 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a PN junction diode formed in the second well, with an impurity concentration of the PN junction thereof set higher than an impurity concentration of the Schottky junction of the Schottky barrier diode, and being connected antiparallel with the Schottky barrier diode. | 03-17-2016 |
| 20160099306 | MONOLITHIC MERGED PIN SCHOTTKY DIODE STRUCTURE - A monolithic merged PIN Schottky (MPS) diode including a chip, at least one PIN diode, at least one Schottky diode and a termination structure is provided. The chip has a first active area, a second active area and a termination area. The PIN diode is disposed in the first active area. The Schottky diode is disposed in the second active area. The termination structure is disposed in the termination area. The first active area and the second active area are separated by the termination area. The PIN diode and the Schottky diode share the termination structure. | 04-07-2016 |
| 20160190126 | Junction Barrier Schottky Rectifier - A junction barrier Schottky rectifier with first and second drift layer sections, wherein a peak net doping concentration of the first section is at least two times lower than a minimum net doping concentration of the second section. For each emitter region the first section includes a layer which is in contact with the respective emitter region to form a pn-junction between the first section and the respective emitter region, wherein the thickness of this layer in a direction perpendicular to the interface between the first section and the respective emitter region is at least 0.1 μm. The JBS rectifier has a transition from unipolar to bipolar conduction mode at a lower forward bias due to lowering of electrostatic forces otherwise impairing the transport of electrons toward the emitter regions under forward bias conditions, and with reduced snap-back phenomenon. | 06-30-2016 |
| 257477000 | With bipolar transistor | 4 |
| 20090072339 | Semiconductor device having diode and IGBT - A semiconductor device includes: a semiconductor substrate including a first conductive type layer; a plurality of IGBT regions, each of which provides an IGBT element; and a plurality of diode regions, each of which provides a diode element. The plurality of IGBT regions and the plurality of diode regions are alternately arranged in the substrate. Each diode region includes a Schottky contact region having a second conductive type. The Schottky contact region is configured to retrieve a minority carrier from the first conductive type layer. The Schottky contact region is disposed in a first surface portion of the first conductive type layer, and adjacent to the IGBT region. | 03-19-2009 |
| 20110108941 | FAST RECOVERY DIODE - A fast recovery diode includes a base layer of a first conductivity type. The base layer has a cathode side and an anode side opposite the cathode side. An anode buffer layer of a second conductivity type having a first depth and a first maximum doping concentration is arranged on the anode side. An anode contact layer of the second conductivity type having a second depth, which is lower than the first depth, and a second maximum doping concentration, which is higher than the first maximum doping concentration, is also arranged on the anode side. A space charge region of the anode junction at a breakdown voltage is located in a third depth between the first and second depths. A defect layer with a defect peak is arranged between the second and third depths. | 05-12-2011 |
| 20130009271 | Schottky-Clamped Bipolar Transistor with Reduced Self Heating - The self heating of a high-performance bipolar transistor that is formed on a fully-isolated single-crystal silicon region of a silicon-on-insulator (SOI) structure is substantially reduced by forming a Schottky structure in the same fully-isolated single-crystal silicon region as the bipolar transistor is formed. | 01-10-2013 |
| 20130075854 | High Voltage ESD Protection Apparatus - An ESD protection apparatus comprises a metal contact formed on the emitter of a transistor. The metal contact has a different conductivity type from the emitter. In addition, the metal contact and the emitter of the transistor form a diode connected in series with the transistor. The diode connected in series with the transistor provides extra headroom for the breakdown voltage of the ESD protection apparatus. | 03-28-2013 |
