| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257470000 | Pn junction adapted as temperature sensor | 16 |
| 20080237772 | SEMICONDUCTOR DEVICE AND TEMPERATURE SENSOR STRUCTURE FOR A SEMICONDUCTOR DEVICE - A temperature sensor structure for a semiconductor device. One embodiment provides a semiconductor substrate including the semiconductor device. A dissipation region of the semiconductor device is adjacent to a main surface of the semiconductor substrate. A first layer arrangement is disposed on the main surface of the semiconductor substrate adjacent to the dissipation region of the semiconductor device. A second layer arrangement is disposed on the first layer arrangement with an insulation layer for galvanic separation therebetween. The first and second layer arrangements and the insulation layer form a layer structure on the main surface above the dissipation region. A circuit element is disposed in the second layer arrangement, the circuit element having a temperature-dependent characteristic and being coupled thermally to the dissipation region. | 10-02-2008 |
| 20080283955 | Temperature Sensing Device - The present invention relates to an integrated device, comprising a semiconductor device formed on a semiconductor substrate, a temperature sensing element formed within a semi-conductive layer formed on the semiconductor substrate, an electrically insulating layer formed over the semi-conductive layer, a metal layer formed over the insulation layer and forming an electrical contact of the semiconductor device, and a thermal contact extending from the metal layer through the electrically insulating layer to a first region of the semi-conductive layer, wherein the first region of the semi-conductive layer is electrically isolated from the temperature sensing element. The present invention also relates to a method of forming a temperature sensing element for integration with a semiconductor device. | 11-20-2008 |
| 20090152666 | THERMOELECTRIC SEMICONDUCTOR DEVICE - A thermoelectric semiconductor device includes a plurality of alternating P-type and N-type semiconductor elements disposed between first and second ceramic layers, first conductor elements attached to the first ceramic layer and interconnecting cold junctions of the P-type and N-type semiconductor elements, and second conductor elements attached to the second ceramic layer and interconnecting hot junctions of the P-type and N-type semiconductor elements. A thermal insulation material made from ammonium phosphate is filled in gaps between the first and second ceramic layers and the P-type and N-type semiconductor elements so that the temperature difference between the hot and cold junctions can be maximized | 06-18-2009 |
| 20090166794 | TEMPERATURE MONITORING IN A SEMICONDUCTOR DEVICE BY THERMOCOUPLES DISTRIBUTED IN THE CONTACT STRUCTURE - By forming thermocouples in a contact structure of a semiconductor device, respective extension lines of the thermocouples may be routed to any desired location within the die, without consuming valuable semiconductor area in the device layer. Thus, an appropriate network of measurement points of interest may be provided, while at the same time allowing the application of well-established process techniques and materials. Hence, temperature-dependent signals may be obtained from hot spots substantially without being affected by design constraints in the device layer. | 07-02-2009 |
| 20090206438 | Semiconductor component - A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current. | 08-20-2009 |
| 20090212386 | MEMS DEVICE AND METHOD OF MAKING SAME - A MEMS device includes a P-N device formed on a silicon pin, which is connected to a silicon sub-assembly, and where the P-N device is formed on a silicon substrate that is used to make the silicon pin before it is embedded into a first glass wafer. In one embodiment, forming the P-N device includes selectively diffusing an impurity into the silicon pin and configuring the P-N device to operate as a temperature sensor. | 08-27-2009 |
| 20090230500 | Semiconductor device - A semiconductor device equipped with a primary semiconductor element and a temperature detecting element for detecting a temperature of the primary semiconductor element. The device includes a first semiconductor layer of a first conductivity type that forms the primary semiconductor element. A second semiconductor region of a second conductivity type is provided in the first semiconductor layer. A third semiconductor region of the first conductivity type is provided in the second semiconductor region. The temperature detecting element is provided in the third semiconductor region and is separated from the first semiconductor layer by a PN junction. | 09-17-2009 |
| 20110062545 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device in accordance with the present invention includes a diode | 03-17-2011 |
| 20110210416 | POLARIZATION ALIGNED AND POLARIZATION GRADED THERMOELECTRIC MATERIALS AND METHOD OF FORMING THEREOF - Exemplary embodiments of the invention include a thermoelectric material having an aligned polarization field along a central axis of the material. Along the axis are a first atomic plane and a second atomic plane of substantially similar area. The planes define a first volume and form a single anisotropic crystal. The first volume has a first outer surface and a second outer surface opposite the first outer surface, with the outer surfaces defining the central axis passing through a bulk. The bulk polarization field is formed from a first electrical sheet charge and a second opposing electrical sheet charge, one on each atomic plane. The opposing sheet charges define a bulk polarization field aligned with the central axis, and the bulk polarization field causes asymmetric thermal and electrical conductivity through the first volume along the central axis. | 09-01-2011 |
| 20110241155 | SEMICONDUCTOR THERMOCOUPLE AND SENSOR - Conventional “on-chip” or monolithically integrated thermocouples are very mechanically sensitive and are expensive to manufacture. Here, however, thermocouples are provided that employ different thicknesses of thermal insulators to help create thermal differentials within an integrated circuit. By using these thermal insulators, standard manufacturing processes can be used to lower cost, and the mechanical sensitivity of the thermocouple is greatly decreased. Additionally, other features (which can be included through the use of standard manufacturing processes) to help trap and dissipate heat appropriately. | 10-06-2011 |
| 20110248374 | UNCOOLED INFRARED DETECTOR AND METHODS FOR MANUFACTURING THE SAME - This disclosure discusses various methods for manufacturing uncooled infrared detectors by using foundry-defined silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) wafers, each of which may include a substrate layer, an insulation layer having a pixel region and a wall region surrounding the pixel region, a pixel structure formed on the pixel region of the insulation layer, a wall structure formed adjacent to the pixel structure and on the wall region of the insulation layer, a dielectric layer covering the pixel structure and the wall structure, a pixel mask formed within the dielectric layer and for protecting the pixel structure during a dry etching process, and a wall mask formed within the dielectric layer and for protecting the wall structure during the dry etching process, thereby releasing a space defined between the wall structure and the pixel structure after the dry etching process. | 10-13-2011 |
| 20120018835 | Thermoelectric Conversion Module - A pressing member is prevented from being damaged by heat, heat dissipation through the pressing member on the higher-temperature side and reduction in thermoelectric conversion efficiency due to it are suppressed, and good electrical conduction is achieved even if thermoelectric conversion elements and electrodes are not cemented through a binder. A lower-temperature side electrode | 01-26-2012 |
| 20120061791 | INFRARED DETECTION DEVICE - According to one embodiment, an infrared detection device includes a detection element. The detection element includes a semiconductor substrate, a signal interconnect section, a detection cell and a support section. The semiconductor substrate is provided with a cavity on a surface of the semiconductor substrate. The signal interconnect section is provided in a region surrounding the cavity of the semiconductor substrate. The detection cell spaced from the semiconductor substrate above the cavity includes a thermoelectric conversion layer, and an absorption layer. The absorption layer is laminated with the thermoelectric conversion layer, and provided with a plurality of holes each having a shape whose upper portion is widened. The support section holds the detection cell above the cavity and connects the signal interconnect section and the detection cell. | 03-15-2012 |
| 20120217609 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - A semiconductor device includes a stacked body with a recessed gas passage formed therein, a heater disposed in the stacked body, the heater being exposed on a bottom surface of the gas passage, and a plurality of thermal sensors disposed in the stacked body in such a manner that the plurality of thermal sensors sandwich the heater therebetween in an extending direction of the gas passage, the plurality of thermal sensors being exposed on the bottom surface of the gas passage. An acceleration sensor having a high affinity to the ordinary semiconductor manufacturing process can be provided. | 08-30-2012 |
| 20140197514 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device that is equipped with a semiconductor substrate, a composite metal film, and a detection terminal is provided. The composite metal film is formed on a surface or a back face of the semiconductor substrate, and has a first metal film, and a second metal film that is joined to the first metal film and is different in Seebeck coefficient from the first metal film. The detection terminal can detect a potential difference between the first metal film and the second metal film. | 07-17-2014 |
| 20160013389 | THERMOCHEMICAL GAS SENSOR USING CHALCOGENIDE-BASED NANOWIRES AND METHOD FOR MANUFACTURING THE SAME | 01-14-2016 |
