| Entries |
| Document | Title | Date |
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| 20080203504 | Magneto-resistance transistor and method thereof - A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input. | 08-28-2008 |
| 20080203505 | Magnetic random access memory with selective toggle memory cells - A toggle MTJ is disclosed that has a SAF free layer with two or more magnetic sub-layers having equal magnetic moments but different anisotropies which is achieved by selecting Ni | 08-28-2008 |
| 20090045475 | DOUBLE SIDED INTEGRATED PROCESSING AND SENSING CHIP - A high density integrated processing and sensing chip includes an integrated signal processing circuit formed on one side of a substrate and a magnetic sensor element formed on an opposing side of the substrate. In one embodiment, the integrated signal processing circuit and the magnetic sensor are able to electrically connected to one another through vias or through metallic trace elements provided by a package frame. | 02-19-2009 |
| 20090146233 | NON-MAGNETIC SEMICONDUCTOR SPIN TRANSISTOR - A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. | 06-11-2009 |
| 20090294882 | METHODS AND SYSTEMS FOR MAGNETIC SENSING - One embodiment relates to a method of manufacturing a magnetic sensor. In the method, an engagement surface is provided. A magnet body is formed over the engagement surface by gradually building thickness of a magnetic material. The magnet body has a magnetic flux guiding surface that substantially corresponds to the engagement surface. Other apparatuses and methods are also set forth. | 12-03-2009 |
| 20090315129 | INTEGRATED CIRCUIT DISTRIBUTED OVER AT LEAST TWO NON-PARALLEL PLANES AND ITS METHOD OF PRODUCTION - An integrated circuit includes a first plate-shaped part and at least a plate-shaped second part separate from the first part and attached to the first part by deformable mechanical connection defining a non-zero angle with the first part. A method of producing the integrated circuit includes depositing deformable connecting means in contact with a first portion of the structure and a second portion of the structure, etching the structure to separate the first portion and the second portion, relatively moving the first and second portions to deform the connecting means and fastening together the first portion and the second portion. | 12-24-2009 |
| 20100013035 | Integrated Circuit, Memory Module, and Method of Manufacturing an Integrated Circuit - An integrated circuit includes a plurality of magnetic tunneling junction stacks, each magnetic tunneling junction stack including a reference layer, a barrier layer and a free layer, wherein the plurality of magnetic tunneling junction stacks share a continuous common reference layer. | 01-21-2010 |
| 20100019332 | METHODS AND APPARATUS FOR INTEGRATED CIRCUIT HAVING ON CHIP CAPACITOR WITH EDDY CURRENT REDUCTIONS - Methods and apparatus for providing an integrated circuit including a substrate having a magnetic field sensor, first and second conductive layers generally parallel to the substrate, and a dielectric layer disposed between the first and second conductive layers such that the first and second conductive layers and the dielectric layer form a capacitor, wherein a slot is formed in at least one of the first and second conductive layers proximate the magnetic field sensor for reducing eddy currents in the first and second conductive layers. | 01-28-2010 |
| 20100019333 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer - A high performance TMR sensor is fabricated by employing a composite inner pinned (AP1) layer in an AP2/Ru/AP1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom thick lower CoFeB or CoFeB alloy layer on the Ru coupling layer, a and 5 to 50 Angstrom thick Fe or Fe alloy layer on the CoFeB or CoFeB alloy, and a 5 to 30 Angstrom thick Co or Co rich alloy layer formed on the Fe or Fe alloy. A MR ratio of about 48% with a RA of <2 ohm-um | 01-28-2010 |
| 20100133632 | VERTICAL HALL SENSOR - A vertical Hall sensor which is integrated in a semiconductor chip has at least 6 electric contacts which are arranged along a straight line on the surface of the semiconductor chip. The electric contacts are wired according to a predetermined rule, namely such that when the contacts are numbered through continuously and repeatedly with the numerals | 06-03-2010 |
| 20100237450 | Arrangements For An Integrated Sensor - An integrated circuit can have a first substrate supporting a magnetic field sensing element and a second substrate supporting another magnetic field sensing element. The first and second substrates can be arranged in a variety of configurations. Another integrated circuit can have a first magnetic field sensing element and second different magnetic field sensing element disposed on surfaces thereof. | 09-23-2010 |
| 20110089512 | MAGNETO-IMPEDANCE SENSOR ELEMENT - A magneto-impedance sensor element 1 has a base body 2, a magnetic amorphous wire 3, a coating insulator 4, a detecting coil 5, a terminal base 6 having a terminal mounting surface 61, wire electrode terminals 11 and coil electrode terminals 12 formed on the terminal mounting surface 61, wire connecting wirings 110 for electrically connecting the wire electrode terminals 11 and a pair of wire conducting terminals 31 provided to the magnetic amorphous wire 3, and coil connecting wirings 120 for electrically connecting the coil electrode terminals 12 and a pair of coil conducting terminals 51 provided to the detecting coil 5. A normal of the terminal mounting surface 61 has a longitudinal direction component of the magnetic amorphous wire 3, and the terminal mounting surface 61 is arranged between both ends of the magnetic amorphous wire 3 in the longitudinal direction of the magnetic amorphous wire 3. | 04-21-2011 |
| 20110147867 | METHOD OF VERTICALLY MOUNTING AN INTEGRATED CIRCUIT - A method of mounting a first integrated circuit ( | 06-23-2011 |
| 20110204460 | Integrated Hall Effect Element Having a Germanium Hall Plate - An integrated circuit and a method of making the integrated circuit provide a Hall effect element having a germanium Hall plate. The germanium Hall plate provides an increased electron mobility compared with silicon, and therefore, a more sensitive Hall effect element. | 08-25-2011 |
| 20110210411 | ULTRA THIN FLIP-CHIP BACKSIDE DEVICE SENSOR PACKAGE - An integrated circuit that senses a phenomenon, such as a magnetic field, may be mounted upside down on a carrier substrate so that the electrical connections to the integrated sensor circuit may be made on the side facing the carrier. This eliminates the need for wirebonds on the side of the sensor integrated circuit that faces the phenomenon being sensed, thereby substantially eliminating any uneven topography on that side. The sensor integrated circuit is able to sense the phenomenon by sensing it through the body of the sensor integrated circuit. The body of the sensor integrated circuit may have a thickness within a vicinity of fifty microns. | 09-01-2011 |
| 20120012956 | MAGNETIC SENSOR AND MAGNETIC MEMORY - The invention relates to a magnetic sensor and a magnetic memory which sense magnetic information held by a ferromagnetic body without a current flowing through the ferromagnetic body. The magnetic sensor and magnetic memory use a magnetoresistive effect generated in a current that flows through a metal layer along an interface, on at least the interface side, with a ferromagnetic dielectric layer and said metal layer being joined through said interface. | 01-19-2012 |
| 20120018827 | MULTI-SENSOR INTEGRATED CIRCUIT DEVICE - A multiple sensor-types integrated circuit device includes a semiconductor die including a first sensor type and a second sensor type formed thereon, an electrically insulating package enclosing the semiconductor die and a plurality of electrically conductive leads coupled to the semiconductor die and extending from the package. By way of example and not limitation, a multiple sensor-types integrated circuit die includes a semiconductor substrate of a first polarity, a plurality of regions of the first polarity formed in the substrate, where the plurality of regions are relatively more heavily doped than the substrate, multiple wells formed in the substrate, and a covering layer formed over the substrate. | 01-26-2012 |
| 20120032289 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device including a memory layer having a vertical magnetization on the layer surface, of which the direction of magnetization is changed according to information; and a reference layer provided against the memory layer, and being a basis of information while having a vertical magnetization on the layer surface, wherein the memory device memorizes the information by reversing the magnetization of the memory layer by a spin torque generated when a current flows between layers made from the memory layer, the nonmagnetization layer and the reference layer, and a coercive force of the memory layer at a memorization temperature is 0.7 times or less than a coercive force at room temperature, and a heat conductivity of a center portion of an electrode formed on one side of the memory layer in the direction of the layer surface is lower than a heat conductivity of surroundings thereof. | 02-09-2012 |
| 20120074511 | MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME - A magnetic memory according to an embodiment includes: at least one memory cell comprising a magnetoresistive element as a memory element, and first and second electrodes that energize the magnetoresistive element. The magnetoresistive element includes: a first magnetic layer having a variable magnetization direction perpendicular to a film plane; a tunnel barrier layer on the first magnetic layer; and a second magnetic layer on the tunnel barrier layer, and having a fixed magnetization direction perpendicular to the film plane. The first magnetic layer including: a first region; and a second region outside the first region so as to surround the first region, and having a smaller perpendicular magnetic anisotropy energy than that of the first region. The second magnetic layer including: a third region; and a fourth region outside the third region, and having a smaller perpendicular magnetic anisotropy energy than that of the third region. | 03-29-2012 |
| 20120153414 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to an embodiment includes: a plurality of magnetic tunnel junction elements arranged on a semiconductor substrate; and a plurality of selection transistors electrically connected to first ends of the plurality of magnetic tunnel junction elements. A plurality of first bit lines are respectively connected to the first ends of the magnetic tunnel junction elements via one or more of the selection transistors. A plurality of upper electrodes are respectively connected to second ends of the plurality of magnetic tunnel junction elements. A plurality of second bit lines are respectively connected to the second ends of the magnetic tunnel junction elements via the upper electrodes. The upper electrodes extend along the second bit lines, and one of the upper electrodes is commonly connected to the second ends of the plurality of magnetic tunnel junction elements arranged in an extending direction of the second bit lines. | 06-21-2012 |
| 20120153415 | MOUNTING STRUCTURE OF CHIP TYPE ELECTRIC ELEMENT AND ELECTRIC APPARATUS HAVING CHIP TYPE ELECTRIC ELEMENT ON FLEXIBLE BOARD - A mounting structure for mounting a chip type electric element on a flexible board includes: the flexible board having a first land, on which a first lead terminal of another electric element is soldered; and the chip type electric element having a long side. A whole of the long side of the chip type electric element faces a long side of the first land. A length of the long side of the first land is defined as IA, and a distance between one long side of the first land and one long side of the chip type electric element is defined as IB, the one long side of the first land facing the chip type electric element but opposite to the one long side of the chip type electric element. The length of IA is equal to or larger than the distance of IB. | 06-21-2012 |
| 20120241887 | VERTICAL HALL SENSOR AND METHOD FOR PRODUCING A VERTICAL HALL SENSOR - The invention relates to a vertical Hall sensor integrated in a semiconductor chip and a method for the production thereof. The vertical Hall sensor has an electrically conductive well of a first conductivity type, which is embedded in an electrically conductive region of a second conductivity type. The electrical contacts are arranged along a straight line on a planar surface of the electrically conductive well. The electrically conductive well is generated by means of high-energy ion implantation and subsequent heating, so that it has a doping profile which either has a maximum which is located at a depth T | 09-27-2012 |
| 20120256283 | INTEGRATED PASSIVE COMPONENT - An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, and an integrated circuit formed on the surface of the semiconductor body, whereby the integrated circuit is connected by traces to the metal surfaces, and having a dielectric passivation layer formed on the surface, and the metal surfaces are connected to pins by bonding wires, and a first coil former, formed above the dielectric layer, with a winding, whereby the winding has a first connector and a second connector, and whereby the winding is formed as a wire or litz wire and the first connector of the winding is connected to a first metal surface and the second connector to a second metal surface. | 10-11-2012 |
| 20120261779 | MAGNETIC RANDOM ACCESS MEMORY - A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni. | 10-18-2012 |
| 20120280341 | INTEGRATED PASSIVE COMPONENT - An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a passivation layer formed on the surface, an integrated circuit formed near the surface of the semiconductor body, whereby the integrated circuit is connected to metal surfaces via traces formed below the passivation layer, a part of the metal surfaces is connected to pins via bonding wires, a first part of a first coil, the part formed in part above the semiconductor body, whereby the first coil with a plurality of turns has a longitudinal axis formed substantially parallel to the surface of the semiconductor body, and a second part of the first coil is formed below the semiconductor body. | 11-08-2012 |
| 20120280342 | INTEGRATED PASSIVE COMPONENT - An integrated passive component having a semiconductor body, arranged on a metal substrate and having a first surface, and a plurality of metal surfaces formed on the surface, a passivation layer formed on the surface, an integrated circuit formed near the surface of the semiconductor body, whereby the integrated circuit is connected to metal surfaces via traces formed below the passivation layer, a part of the metal surfaces is connected to pins via bonding wires, and a first coil formed above the passivation layer, whereby the first coil with a plurality of turns has a longitudinal axis formed substantially parallel to the surface of the semiconductor body, and in a lower part of the first coil, said part which is formed substantially parallel to the longitudinal axis of the coil on the surface of the semiconductor body, parts of a plurality of turns are formed as sections of traces. | 11-08-2012 |
| 20120313193 | SYSTEMS AND METHODS FOR THREE DIMENSIONAL SENSORS - Systems and methods for fabricating a multi-axis sensor are provided. In one implementation, a method comprises: fabricating a first die having a first active surface with first application electronics; fabricating a second die having a second active surface with second application electronics and a plurality of electrical connections that extend from the second application electronics to a side surface interface of the second die that is adjacent to the second active surface; aligning the side surface interface to be coplanar with the first active surface; and forming at least one electrical connection between the plurality of electrical connections and the first active surface. | 12-13-2012 |
| 20120319221 | METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION CONFIGURED FOR PRECESSIONAL SWITCHING USING A BIAS STRUCTURE - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching. | 12-20-2012 |
| 20130020660 | Reinforced Isolation for Current Sensor with Magnetic Field Transducer - A current sensor packaged in an integrated circuit package to include a magnetic field sensing circuit, a current conductor and an insulator that meets the safety isolation requirements for reinforced insulation under the UL 60950-1 Standard is presented. The insulator is provided as an insulation structure having at least two layers of thin sheet material. The insulation structure is dimensioned so that plastic material forming a molded plastic body of the package provides a reinforced insulation. According to one embodiment, the insulation structure has two layers of insulating tape. Each insulating tape layer includes a polyimide film and adhesive. The insulation structure and the molded plastic body can be constructed to achieve at least a 500 VRMS working voltage rating. | 01-24-2013 |
| 20130146997 | MAGNETIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of H | 06-13-2013 |
| 20130249028 | MAGNETIC MEMORY AND METHOD OF FABRICATING THE SAME - A method of fabricating a magnetic memory according to an embodiment includes: forming a separation layer on a first substrate; sequentially forming a first ferromagnetic layer, a first nonmagnetic layer, and a second ferromagnetic layer on the separation layer, at least one of the first and the second ferromagnetic layers having a single crystal structure; forming a first conductive bonding layer on the second ferromagnetic layer; forming a second conductive bonding layer on a second substrate, on which a transistor and a wiring are formed, the second conductive bonding layer electrically connecting to the transistor; arranging the first and second substrate so that the first conductive bonding layer and the second conductive bonding layer are opposed to each other, and bonding the first and the second conductive bonding layers to each other; and separating the first substrate from the first ferromagnetic layer by using the separation layer. | 09-26-2013 |
| 20130249029 | Magnetic Field Sensor Integrated Circuit with Integral Ferromagnetic Material - A magnetic field sensor includes a lead frame, a semiconductor die having a first surface in which a magnetic field sensing element is disposed and a second surface attached to the lead frame, and a non-conductive mold material enclosing the die and at least a portion of the lead frame. The sensor may include a ferromagnetic mold material secured to a portion of the non-conductive mold material. Features include a multi-sloped taper to an inner surface of a non-contiguous central region of the ferromagnetic mold material, a separately formed element disposed in the non-contiguous central region, one or more slots in the lead frame, a molded ferromagnetic suppression device spaced from the non-conductive mold material and enclosing a portion of a lead, a passive device spaced from the non-conductive mold material and coupled to a plurality of leads, and a ferromagnetic bead coupled to a lead. Also described is a coil secured to the non-conductive mold material and a lead having at least two separated portions with a passive component coupled across the two portions. | 09-26-2013 |
| 20130264667 | Magnetic Field Sensors and Methods for Fabricating the Magnetic Field Sensors - Magnetic field sensors and associated methods of manufacturing the magnetic field sensors include molded structures to encapsulate a magnetic field sensing element and an associated die attach pad of a lead frame and to also encapsulate or form a magnet or a flux concentrator. | 10-10-2013 |
| 20130277783 | Arrangements For An Integrated Sensor - An integrated circuit can have a first substrate supporting a magnetic field sensing element and a second substrate supporting another magnetic field sensing element. The first and second substrates can be arranged in a variety of configurations. Another integrated circuit can have a first magnetic field sensing element and second different magnetic field sensing element disposed on surfaces thereof. | 10-24-2013 |
| 20130334634 | Single-Package Bridge-Type Magnetic-Field Angle Sensor - A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages. | 12-19-2013 |
| 20130341745 | Magnetic Field Measurement Apparatus - A light pumping magnetic measurement apparatus configured to suppress an influence on a magnetic field from a heater and facilitate reduction in size and integration of a gas cell when heating the gas cell in order to improve a sensitivity of detection of the magnetic field is provided. This measurement apparatus includes a first glass substrate, a substrate | 12-26-2013 |
| 20140021571 | Single-chip bridge-type magnetic field sensor and preparation method thereof - The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs. | 01-23-2014 |
| 20140054733 | SINGLE-CHIP REFERENCED FULL-BRIDGE MAGNETIC FIELD SENSOR - The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry. | 02-27-2014 |
| 20140084402 | MAGNETIC MEMORY - According to one embodiment, a magnetic memory includes a first magnetoresistive element includes a storage layer with a perpendicular and variable magnetization, a tunnel barrier layer, and a reference layer with a perpendicular and invariable magnetization, and stacked in order thereof in a first direction, and a first shift corrective layer with a perpendicular and invariable magnetization, the first shift corrective layer and the storage layer arranged in a direction intersecting with the first direction. Magnetization directions of the reference layer and the first shift corrective layer are the same. | 03-27-2014 |
| 20140084403 | INTEGRATED CIRCUIT INCLUDING SENSOR HAVING INJECTION MOLDED MAGNETIC MATERIAL - An integrated circuit includes a magnetic field sensor and an injection molded magnetic material enclosing at least a portion of the magnetic field sensor. | 03-27-2014 |
| 20140151830 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A GRADED MAGNETIC FREE LAYER - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a gradient in a critical switching current density (J | 06-05-2014 |
| 20140151831 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A THERMALLY STABLE AND EASY TO SWITCH MAGNETIC FREE LAYER - A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. | 06-05-2014 |
| 20140159178 | MAGNETIC FIELD SENSOR - A magnetic field sensor having a support with a top side and a bottom side, whereby a Hall plate is provided on the top side of the support and the Hall plate comprises a carbon-containing layer. | 06-12-2014 |
| 20140159179 | TWO-AXIS MAGNETIC FIELD SENSOR HAVING REDUCED COMPENSATION ANGLE FOR ZERO OFFSET - A sensor and fabrication process are provided for forming reference layers with substantially orthogonal magnetization directions having zero offset with a small compensation angle. An exemplary embodiment includes a sensor layer stack of a magnetoresistive thin-film based magnetic field sensor, the sensor layer stack comprising a pinning layer; a pinned layer including a layer of amorphous material over the pinning layer, and a first layer of crystalline material over the layer of amorphous material; a nonmagnetic coupling layer over the pinned layer; a fixed layer over the nonmagnetic coupling layer; a tunnel barrier over the fixed layer; and a sense layer over the nonmagnetic intermediate layer. Another embodiment includes a sensor layer stack where a pinned layer including two crystalline layers separated by a amorphous layer. | 06-12-2014 |
| 20140167193 | SEMICONDUCTOR DEVICE WITH INTEGRATED MAGNETIC ELEMENT PROVIDED WITH A BARRIER STRUCTURE AGAINST METAL CONTAMINATION, AND MANUFACTURING - A semiconductor device including: a semiconductor body having a first side and a second side opposite to one another; a first barrier element, which extends over the first side of the semiconductor body and is made of a first material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloy; a magnetic element, which extends over the first barrier layer and is made of a second material having magnetic properties, for example a ferromagnetic material; a second barrier element, which extends over the magnetic layer and is made of a third material configured to act as barrier against metal ions, for example chosen from among titanium, tantalum, titanium alloys or compounds, tantalum alloys or compounds. The first and second barrier elements form a top encapsulating structure and a bottom encapsulating structure for the magnetic element. | 06-19-2014 |
| 20140175583 | PERPENDICULAR SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE HAVING OFFSET CELLS AND METHOD TO FORM SAME - Perpendicular spin transfer torque memory (STTM) devices having offset cells and methods of fabricating perpendicular STTM devices having offset cells are described. For example, a spin torque transfer memory (STTM) array includes a first load line disposed above a substrate and having only a first STTM device. The STTM array also includes a second load line disposed above the substrate, adjacent the first load line, and having only a second STTM device, the second STTM device non-co-planar with the first STTM device. | 06-26-2014 |
| 20140175584 | MAGNETIC FIELD SENSOR AND METHOD OF FABRICATING A MAGNETIC FIELD SENSOR HAVING A PLURALITY OF VERTICAL HALL ELEMENTS ARRANGED IN AT LEAST A PORTION OF A POLYGONAL SHAPE - A magnetic field sensor has a plurality of vertical Hall elements arranged in at least a portion of a polygonal shape. The magnetic field sensor includes an electronic circuit to process signals generated by the plurality of vertical Hall elements to identify a direction of a magnetic field. A corresponding method of fabricating the magnetic field sensor is also described. | 06-26-2014 |
| 20140203384 | Push-Pull Magnetoresistive Sensor Bridges and Mass Fabrication Method - A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages. | 07-24-2014 |
| 20140203385 | MAGNETIC MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetic memory comprises an electrode, a memory layer which is formed on the electrode and has magnetic anisotropy perpendicular to a film plane, and in which a magnetization direction is variable, a tunnel barrier layer formed on the memory layer, and a reference layer which is formed on the tunnel barrier layer and has magnetic anisotropy perpendicular to the film plane, and in which a magnetization direction is invariable. The memory layer has a positive magnetostriction constant on a side of the electrode, and a negative magnetostriction constant on a side of the tunnel barrier layer. | 07-24-2014 |
| 20140217533 | MAGNETIC SENSOR INTEGRATED IN A CHIP FOR DETECTING MAGNETIC FIELDS PERPENDICULAR TO THE CHIP AND MANUFACTURING PROCESS THEREOF - An integrated magnetic sensor formed by a semiconductor chip having a surface and accommodating a magnetic via and a sensing coil. The magnetic via is formed by a cylindrical layer of ferromagnetic material that extends perpendicular to the surface of the first chip and has in cross-section an annular shape of a circular or elliptical or curvilinear type. The sensing coil surrounds the magnetic via at a distance and is connected to an electronic circuit. | 08-07-2014 |
| 20140217534 | MAGNETIC MEMORY ELEMENT AND STORAGE DEVICE USING THE SAME - A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer. | 08-07-2014 |
| 20140239426 | CURRENT SENSORS AND METHODS - Embodiments relate to current sensors and methods. In an embodiment, a current sensor comprises a leadframe; a semiconductor die coupled to the leadframe; a conductor comprising a metal layer on the semiconductor die, the conductor comprising at least one bridge portion and at least two slots, a first slot having a first tip and a second slot having a second tip, a distance between the first and second tips defining a width of one of the at least one bridge portion, wherein the conductor is separated from the leadframe by at least a thickness of the semiconductor die, and the thickness is about 0.2 millimeters (mm) to about 0.7 mm; and at least one magnetic sensor element arranged on the die relative to and spaced apart from the one of the at least one bridge portion and more proximate the conductor than the leadframe. | 08-28-2014 |
| 20140252519 | MAGNETORESISTIVE STRUCTURES, MAGNETIC RANDOM-ACCESS MEMORY DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURE - Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer. | 09-11-2014 |
| 20140264676 | FORMING MAGNETIC MICROELECTROMECHANICAL INDUCTIVE COMPONENTS - A micro-electromechanical device and method of manufacture are disclosed. A sacrificial layer is formed on a silicon substrate. A metal layer is formed on a top surface of the sacrificial layer. Soft magnetic material is electrolessly deposited on the metal layer to manufacture the micro-electromechanical device. The sacrificial layer is removed to produce a metal beam separated from the silicon substrate by a space. | 09-18-2014 |
| 20140264677 | Chip Package with Isolated Pin, Isolated Pad or Isolated Chip Carrier and Method of Making the Same - A chip package with isolated pin, isolated pad or isolated chip carrier and a method of making the same are disclosed. In one embodiment a chip package includes a chip, a package encapsulating the chip, pads or pins disposed on a first side of the package and an isolation pad or an isolation pin disposed on a second side of the package, the isolation pin or the isolation pad electrically isolated from the chip, wherein the chip comprises a magnetic field sensor configured to measure a magnetic field generated outside of the package. | 09-18-2014 |
| 20140264678 | PACKAGING FOR AN ELECTRONIC DEVICE - In one aspect, a method includes processing a metal substrate, performing a first etch on a first surface of the metal substrate to form, for an integrated circuit package, secondary leads and a curved component having two primary leads and performing a second etch, on a second surface of the substrate opposite the first surface, at locations on the secondary leads and locations on the curved component to provide a locking mechanism. Each primary lead located at a respective end of the curved component. | 09-18-2014 |
| 20140264679 | LOGIC CHIP INCLUDING EMBEDDED MAGNETIC TUNNEL JUNCTIONS - An embodiment integrates memory, such as spin-torque transfer magnetoresistive random access memory (STT-MRAM) within a logic chip. The STT-MRAM includes a magnetic tunnel junction (MTJ) with an upper MTJ layer, lower MTJ layer, and tunnel barrier directly contacting the upper MTJ layer and the lower MTJ layer; wherein the upper MTJ layer includes an upper MTJ layer sidewall and the lower MTJ layer includes a lower MTJ sidewall horizontally offset from the upper MTJ layer. Another embodiment includes a memory area, comprising a MTJ, and a logic area located on a substrate; wherein a horizontal plane intersects the MTJ, a first Inter-Layer Dielectric (ILD) material adjacent the MTJ, and a second ILD material included in the logic area, the first and second ILD materials being unequal to one another. In an embodiment the first and second ILDs directly contact one another. Other embodiments are described herein. | 09-18-2014 |
| 20140264680 | Non-Volatile Memory Devices and Methods of Fabricating the Same - A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact. | 09-18-2014 |
| 20140284742 | MAGNETORESISTIVE ELEMENT - According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer. | 09-25-2014 |
| 20140284743 | MAGNETIC STORAGE DEVICE - According to one embodiment, a magnetic storage device includes an insulating region, a lower electrode including a first portion formed in a hole provided in the insulating region and a second portion protruded from the insulating region, a spacer insulating film formed on a side surface of at least the second portion of the lower electrode, a magnetic tunneling junction portion formed on a top surface of the lower electrode, and an upper electrode formed on the magnetic tunneling junction portion. | 09-25-2014 |
| 20140312441 | NOVEL SPIN HALL EFFECT MAGNETIC-RAM - A spin Hall effect magnetoresistive memory comprises apparatus of a three terminal magnetoresistive memory cell having an MTJ stack, a functional magnetic layer having a magnetization anti-parallel or parallel coupled with a recording layer magnetization in the MTJ stack, and a SHE-metal base layer. The control circuitry coupled through the bit line and the two select transistors to selected ones of the plurality of magnetoresistive memory elements to supply a reading current across the magnetoresistive element stack and two bottom electrodes and to supply a bi-directional spin Hall effect recording current, and accordingly to directly switch the magnetization of the functional magnetic coupling layer and indirectly switching the magnetization of the recording layer through the coupling between the functional magnetic coupling layer and the recording layer. | 10-23-2014 |
| 20140319634 | High Density Nonvolatile Memory - One embodiment of a nonvolatile memory cell comprises a substrate having a surface, a bidirectional current switch comprising a first electrode, a second electrode, and a semiconductor layer disposed between the first and second electrodes, and a magnetoresistive element having a direct contact with the bidirectional current switch and comprising a free ferromagnetic layer having a reversible magnetization direction, a pinned ferromagnetic layer having a fixed magnetization direction, and a tunnel barrier layer disposed between the free and pinned ferromagnetic layers, wherein the magnetization direction of the free ferromagnetic layer is reversed by a bidirectional spin polarized current running through the magnetoresitive element in a direction perpendicular to the substrate surface, and wherein a magnitude of the spin polarized current is controlled by the bidirectional current switch. Other embodiments are described and shown. | 10-30-2014 |
| 20140332917 | MAGNETIC-FIELD SENSING DEVICE - Apparatus and associated methods may relate to Magneto-Resistive Sensing Devices (MRSDs). In accordance with an exemplary embodiment, an MRSD comprises an underlying semiconductor device and a magneto-resistive sensor. In some exemplary embodiments, the semiconductor device is processed through most of a standard process flow. After the standard process flow, in various embodiments, a planarization step may be performed to create a more planar top surface. In some embodiments, the magneto-resistive material, which may be made from a Nickel-Iron alloy, called Permalloy, is deposited on the planar surface. A layer of interconnect metallization also may reside in this top region. The magneto-resistive material may contact the topmost layer of metallization of the semiconductor device via contact openings in the planarized surface. In some embodiments, the magneto-resistive material may similarly contact the topmost layer of metallization through these contact openings. The magneto-resistive material resides directly above the underlying circuitry. | 11-13-2014 |
| 20140353785 | LOW-CONSUMPTION, AMR-TYPE, INTEGRATED MAGNETORESISTOR - An integrated magnetoresistive sensor ( | 12-04-2014 |
| 20140367815 | MANUFACTURING MAGNETIC SENSOR ELEMENTS MONOLITHICALLY INTEGRATED AT A SEMICONDUCTOR CHIP COMPRISING AN INTEGRATED CIRCUIT - A method is described for manufacturing a magnetic sensor module ( | 12-18-2014 |
| 20150021727 | APPLICATION SPECIFIC INTEGRATED CIRCUIT WITH INTEGRATED MAGNETIC SENSOR - A method and system for a device with a magnetic sensor element and magnetic storage elements is disclosed. The device includes an integrated circuit substrate. At least a magnetic sensor with a magnetic sensor element with a permanent magnet is disposed over the integrated circuit substrate. A plurality of magnetic storage elements, each with at least one permanent magnet is disposed over the integrated circuit substrate. | 01-22-2015 |
| 20150035099 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING A PACKAGE STRUCTURE USABLE IN SPIN TRANSFER TORQUE MEMORIES - A method and system for providing a magnetic junction usable in a magnetic device are described. The magnetic includes a pinned layer, a nonmagnetic spacer layer, a free layer, and package structure(s). The pinned layer has a pinned layer perimeter and a top surface. The nonmagnetic spacer layer is on at least part of the top surface and between the pinned and free layers. The free layer has a free layer perimeter. The package structure(s) are ferromagnetic and encircles at least one of the free layer and the pinned layer. The package structure(s) are ferromagnetically coupled with the pinned layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. | 02-05-2015 |
| 20150069562 | Magnetic Tunnel Junctions And Methods Of Forming Magnetic Tunnel Junctions - A method of forming a line of magnetic tunnel junctions includes forming magnetic recording material over a substrate, non-magnetic material over the recording material, and magnetic reference material over the non-magnetic material. The substrate has alternating outer regions of reactant source material and insulator material along at least one cross-section. The reference material is patterned into a longitudinally elongated line passing over the alternating outer regions. The recording material is subjected to a set of temperature and pressure conditions to react with the reactant of the reactant source material to form regions of the dielectric material which longitudinally alternate with the recording material along the line and to form magnetic tunnel junctions along the line which individually comprise the recording material, the non-magnetic material, and the reference material that are longitudinally between the dielectric material regions. Other methods, and lines of magnetic tunnel junctions independent of method, are disclosed. | 03-12-2015 |
| 20150069563 | Low Offset and High Sensitivity Vertical Hall Effect Sensor - A vertical Hall Effect sensor is provided having a high degree of symmetry between its bias modes, can be adapted to exhibit a small pre-spinning systematic offset, and complies with the minimal spacing requirements allowed by the manufacturing technology (e.g., CMOS) between the inner contacts. These characteristics enable the vertical Hall Effect sensor to have optimal performance with regard to offset and sensitivity. | 03-12-2015 |
| 20150076636 | Current Sensor Device - A current sensor device for sensing a measuring current includes a semiconductor chip having a magnetic field sensitive element. The current sensor device further includes an encapsulant embedding the semiconductor chip. A conductor configured to carry the measuring current is electrically insulated from the magnetic field sensitive element. A redistribution structure includes a first metal layer having a first structured portion which forms part of the conductor. | 03-19-2015 |
| 20150091112 | VERTICAL HALL EFFECT SENSOR - In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type. | 04-02-2015 |
| 20150129996 | METHOD AND SYSTEM FOR PROVIDING A TOP PINNED LAYER PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS - A method for providing a magnetic junction usable in a magnetic device and the magnetic junction are described. A free layer and nonmagnetic spacer layer are provided. The free layer and nonmagnetic spacer layer are annealed at an anneal temperature of at least three hundred fifty degrees Celsius. A pinned layer is provided after the annealing step. The nonmagnetic spacer layer is between the pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. | 05-14-2015 |
| 20150129997 | DUAL PERPENDICULAR MAGNETIC ANISOTROPY MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS - A method for providing a dual magnetic junction usable in a magnetic device and the dual magnetic junction are described. First and second nonmagnetic spacer layers, a free layer and pinned are provided. The first pinned layer, free layer and nonmagnetic spacer layer may be annealed at an anneal temperature of at least three hundred fifty degrees Celsius before a second pinned layer is provided. The second pinned layer may include Co, Fe and Tb. The nonmagnetic spacer layers are between the pinned layers and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. | 05-14-2015 |
| 20150129998 | METHODS FOR MANUFACTURING CARBON RIBBONS FOR MAGNETIC DEVICES - In one embodiment of the invention, there is provided a method for manufacturing a magnetic memory device, comprising: depositing a carbon layer comprising amorphous carbon on a substrate; annealing the carbon layer to activate dopants contained therein; and selectively etching portions of the carbon layer to forms lines of spaced apart carbon conductors. | 05-14-2015 |
| 20150349243 | MAGNETORESISTIVE SENSOR, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE - A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming the trench structure comprises performing a wet etching process on a substrate material member, wherein the trench structure has a first side, a second side, and a third side, wherein the second side is connected through the first side to the third side, wherein the second side is at a first obtuse angle with respect to a side of the substrate, and wherein the third side is at a second obtuse angle with respect to the side of the substrate; forming a first magnetic element on the first side of the trench structure; forming a second magnetic element on the second side of the trench structure; and forming a third magnetic element on the third side of the trench structure. | 12-03-2015 |
| 20160005791 | METHOD AND SYSTEM FOR PROVIDING A THIN PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS - A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. The nonmagnetic spacer layer and the free layer are between the pinned layer and the substrate. The pinned layer has a pinned layer perpendicular magnetic anisotropy energy greater than a pinned layer out-of-plane demagnetization energy and a thickness of not more than thirty Angstroms. | 01-07-2016 |
| 20160020249 | MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - An MRAM device comprises an insulating interlayer comprising a flat first upper surface on a first region and a second region of a substrate. A pattern structure comprising pillar-shaped magnetic tunnel junction (MTJ) structures and a filling layer pattern between the MTJ structures is formed on the insulating interlayer of the first region. The pattern structure comprises a flat second upper surface that is higher than the first upper surface. Bit lines are formed on the pattern structure that contact top surfaces of the MTJ structures. An etch-stop layer is formed on the pattern structure between the bit lines of the first region and the first upper surface of the first insulating interlayer of the second region. A first portion of an upper surface of the etch-stop layer on the first region is higher than a second portion of the upper surface of the etch-stop layer on the second region. | 01-21-2016 |
| 20160035970 | MAGNETIC JUNCTIONS USING ASYMMETRIC FREE LAYERS AND SUITABLE FOR USE IN SPIN TRANSFER TORQUE MEMORIES - A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The first and second ferromagnetic layers each contain at least one of Co and CoFe. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. | 02-04-2016 |
| 20160043301 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING HEUSLER MULTILAYERS - A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a reference layer and nonmagnetic spacer layer between the free and reference layers. At least one of the free and reference layers includes at least one Heusler multilayer. Each of the at least one Heusler multilayer includes a plurality of Heusler adjoining layers that at least one interface. The Heusler layers include a plurality of Heusler alloys, have a plurality of lattice parameters and have a plurality of coefficients of thermal expansion. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. | 02-11-2016 |
| 20160043306 | REVERSED STACK MTJ - An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ). The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed over a surface of the substrate. Of the pinned layer, the barrier layer, and the free layer, the free layer is formed first and is closest to the surface. This enables a spacer to be formed over a perimeter region of the free layer prior to etching the free layer. Any damage to the free layer that results from etching or other free layer edge-defining process is kept at a distance from the tunneling junction by the spacer. | 02-11-2016 |
| 20160052777 | MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD - An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer. | 02-25-2016 |
| 20160054401 | MAGNETIC SENSOR AND FORMING METHOD - The present disclosure relates to a MEMS device with a magnetic film disposed on a first substrate, and an associated method of formation. In some embodiments, the magnetic film is disposed on a planar front surface of the first substrate such that depositing and patterning processes of the magnetic film is improved. A sensing gap of a MEMS device associated with the magnetic film is located between the magnetic film and a recessed lateral surface of a second substrate. The second substrate is bonded to the first substrate at front surfaces of the first and second substrate. Forming the magnetic film on the planar front allows for patterning of the magnetic film without leaving unwanted residues of magnetic material. Without the unwanted residue of magnetic material, less contamination from the magnetic material is introduced after dry etching and passivation processes, improving yield and reliability of the MEMS device. | 02-25-2016 |
| 20160064451 | SEMICONDUCTOR COMPONENT COMPRISING MAGNETIC FIELD SENSOR - The invention relates to a semiconductor component ( | 03-03-2016 |
| 20160064650 | SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF - The present invention is directed to a spin-orbitronics device including a magnetic comparison layer structure having a pseudo-invariable magnetization direction; a magnetic free layer structure whose variable magnetization direction can be switched by a switching current passing between the magnetic comparison layer structure and the magnetic free layer structure; an insulating tunnel junction layer interposed between the magnetic comparison layer structure and the magnetic free layer structure; and a non-magnetic transverse polarizing layer formed adjacent to the magnetic comparison layer structure. The pseudo-invariable magnetization direction of the magnetic comparison layer structure may be switched by passing a comparison current through the transverse polarizing layer along a direction that is substantially parallel to a layer plane of the transverse polarizing layer. The pseudo-invariable magnetization direction of the magnetic comparison layer structure is not switched by the switching current. The variable magnetization direction of the magnetic free layer structure is not switched by the comparison current. | 03-03-2016 |
| 20160072045 | MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a magnetic memory is disclosed. The magnetic memory comprises an interconnect layer, a first conductive layer on the interconnect layer, the first conductive layer including a metal, an oxide layer on the first conductive layer, a second conductive layer on the oxide layer, a magnetoresistive element on the second conductive layer, the magnetoresistive element including a first magnetic layer, a second magnetic layer and a nonmagnetic layer between the first and second magnetic layers, and a deposited material on a sidewall of the oxide layer, the deposited material including the metal. | 03-10-2016 |
| 20160148975 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (Mn | 05-26-2016 |
| 20160155932 | MAGNETIC CELL STRUCTURES, AND METHODS OF FABRICATION | 06-02-2016 |
| 20160172582 | Magnetoresistive Memory Element having a Metal Oxide Tunnel Barrier | 06-16-2016 |
| 20160190432 | DUAL ENCAPSULATION INTEGRATION SCHEME FOR FABRICATING INTEGRATED CIRCUITS WITH MAGNETIC RANDOM ACCESS MEMORY STRUCTURES - Integrated circuits with magnetic random access memory (MRAM) and dual encapsulation for double magnesium oxide tunnel barrier structures and methods for fabricating the same are disclosed herein. As an illustration, an integrated circuit includes a magnetic random access memory structure that includes a bottom electrode that has a bottom electrode width and has bottom electrode sidewalls and a fixed layer overlying the bottom electrode that has a fixed layer width that is substantially equal to the bottom electrode width and has fixed layer sidewalls. The MRAM structure of the integrated circuit further includes a free layer overlying a central area of the fixed layer. Still further, the MRAM structure of the integrated circuit includes a first encapsulation layer disposed along the free layer sidewalls and a second encapsulation layer disposed along the bottom electrode sidewalls and the fixed layer sidewalls. | 06-30-2016 |
| 20160190433 | VERTICAL HALL EFFECT SENSOR - In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type. | 06-30-2016 |
| 20160197119 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING FREE LAYERS THAT ARE COBALT-FREE | 07-07-2016 |
| 20160197264 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS INCLUDING SELF-INITIALIZING REFERENCE LAYERS | 07-07-2016 |
| 20160204161 | MAGNETIC SENSOR INCLUDING RESISTOR ARRAY INCLUDING A PLURALITY OF RESISTIVE ELEMENT SECTIONS EACH HAVING MAGNETORESISTANCE ELEMENT | 07-14-2016 |
| 20160254046 | HIGH CAPACITY LOW COST MULTI-STATE MAGNETIC MEMORY | 09-01-2016 |
| 20160380182 | MAGNETORESISTIVE ELEMENT - According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe. | 12-29-2016 |
| 20170236868 | SPIN-ORBITRONICS DEVICE AND APPLICATIONS THEREOF | 08-17-2017 |
| 20170236998 | INTEGRATED ANISOTROPIC MAGNETORESISTIVE DEVICE | 08-17-2017 |
| 20190148624 | HALL ELEMENT FOR 3-D SENSING AND METHOD FOR PRODUCING THE SAME | 05-16-2019 |
